DE19644153A1 - Multistage low pressure plasma cleaning process - Google Patents
Multistage low pressure plasma cleaning processInfo
- Publication number
- DE19644153A1 DE19644153A1 DE1996144153 DE19644153A DE19644153A1 DE 19644153 A1 DE19644153 A1 DE 19644153A1 DE 1996144153 DE1996144153 DE 1996144153 DE 19644153 A DE19644153 A DE 19644153A DE 19644153 A1 DE19644153 A1 DE 19644153A1
- Authority
- DE
- Germany
- Prior art keywords
- carried out
- hydrogen
- oxygen
- low pressure
- pressure plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
- C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/02—Pretreatment of the material to be coated, e.g. for coating on selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C8/00—Solid state diffusion of only non-metal elements into metallic material surfaces; Chemical surface treatment of metallic material by reaction of the surface with a reactive gas, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
- C23C8/02—Pretreatment of the material to be coated
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Die Anmeldung beschreibt eine Anordnung und ein Verfahren zur Reinigung, Ent fettung und Aktivierung von Teilen mittels einer Niederdruck-Gasentladung (Plasma). Die Reinigung und Entfettung von Teilen ist in der industriellen Praxis vielfältig erforderlich. Die unterschiedlichen Materialien, Verschmutzungen und An forderungen erfordern eine Anpassung der verwendeten Prozesse.The application describes an arrangement and a method for cleaning, ent greasing and activation of parts by means of a low pressure gas discharge (Plasma). The cleaning and degreasing of parts is in industrial practice manifold required. The different materials, soiling and type requirements require an adjustment of the processes used.
Die Reinigung und Entfettung mittels Plasmaprozessen wird z. B in DE 42 28 551 C2, in DE 44 37 269 C1 oder in DE 42 28 551 A1 beschrieben. Es bestehen an ei nen solchen Prozeß unterschiedliche Anforderungen: Entfetten durch die Reaktion der Kohlenwasserstoffe in einem Sauerstoffplasma, Entfernen von Oxiden des Werkstückmaterials durch Reduzieren mit Wasserstoff, Verdampfen von organi schen Verunreinigungen durch die thermische Wirkung von Elektronen und Ionen, Sputtern der Oberfläche durch den Beschuß mit Ionen, vorzugsweise Argon- Inertgasionen. In den vorliegenden Arbeiten wird versucht, diese verschiedenen Wirkungen durch geeignete Gasgemische auszubalancieren. The cleaning and degreasing by means of plasma processes is e.g. B in DE 42 28 551 C2, described in DE 44 37 269 C1 or in DE 42 28 551 A1. There exist on egg Such a process has different requirements: degreasing through the reaction the hydrocarbons in an oxygen plasma, removing oxides of the Workpiece material by reducing with hydrogen, evaporation of organi pollution caused by the thermal effects of electrons and ions, Sputtering the surface by bombardment with ions, preferably argon Inert gas ions. The present work tries to differentiate these Balancing effects with suitable gas mixtures.
Da jedoch die Werkstückmaterialien, die Verschmutzungen und die Anforderungen unterschiedlich sein können, führen Gasgemische o. g. Art zu Problemen. Die An passung der Mischungen führt zu immer neuen vorgemischten Prozeßgasen oder zu aufwendigen Mischeinrichtungen mit hohem Optimierungsaufwand. Weiterhin lassen sich gegensätzlich wirkende Prozesse (Oxidieren/Reduzieren) nur schwer gleichzeitig effektiv durchführen.However, since the workpiece materials, the contamination and the requirements can be different, lead gas mixtures o. g. Kind of problems. The An Matching the mixtures always leads to new premixed process gases or to complex mixing devices with high optimization effort. Farther opposing processes (oxidizing / reducing) are difficult perform effectively at the same time.
Aufgabenstellung für die vorliegende Anmeldung war es, ein neues Verfahren zur schaffen, das es erlaubt, auf einfache und effiziente Weise die unterschiedlichen Wirkungen der Plasmabehandlung auf die jeweilige Situation anzupassen.The task for the present application was to develop a new method create that allows the different in a simple and efficient way Adapting the effects of plasma treatment to the respective situation.
Die Aufgabenstellung wird erfindungsgemäß dadurch gelöst, daß die verschiedenen Wirkungen der Plasmabehandlung einzeln in aufeinanderfolgenden Prozeßschritten aktiviert werden. Dies ermöglicht es, jeden einzelnen Schritt übersichtlich und nahe zu ohne Wechselwirkung mit anderen Prozeßschritten zu optimieren.The task is solved according to the invention in that the different Effects of plasma treatment individually in successive process steps to be activated. This makes every single step clear and close to optimize without interacting with other process steps.
Für eine Reinigung bietet sich zum Beispiel folgender Ablauf an:
For example, the following procedure is suitable for cleaning:
- 1. Entfetten mit Sauerstoff1. Degreasing with oxygen
- 2. Reduzieren mit Wasserstoff2. Reduce with hydrogen
- 3. Entfernen von anorganischen Verunreinigungen durch Sputterätzen mit Ar gon.3. Removal of inorganic contaminants by sputter etching with Ar gon.
Jeder dieser Schritte kann einfach einzeln optimiert werden. Zum Beispiel muß nicht mit einer erneuten Oxidation während der Reduktion gerechnet werden. Es können je nach Anforderung weitere Prozeßschritte mit den unterschiedlichsten Prozeßga sen eingeführt werden. Weiterhin ist es möglich, ohne Bruch des Vakuums und da mit ohne Beeinträchtigung der Oberfläche weitere Behandlungsschritte, zum Bei spiel zum Korrosionsschutz oder zur Beschichtung, durchzuführen.Each of these steps can easily be optimized individually. For example, does not have to re-oxidation during the reduction can be expected. It can Depending on requirements, further process steps with the most varied process ga be introduced. Furthermore, it is possible without breaking the vacuum and there with further treatment steps without impairing the surface game for corrosion protection or for coating.
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1996144153 DE19644153A1 (en) | 1996-10-24 | 1996-10-24 | Multistage low pressure plasma cleaning process |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE1996144153 DE19644153A1 (en) | 1996-10-24 | 1996-10-24 | Multistage low pressure plasma cleaning process |
Publications (1)
Publication Number | Publication Date |
---|---|
DE19644153A1 true DE19644153A1 (en) | 1998-04-30 |
Family
ID=7809826
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1996144153 Withdrawn DE19644153A1 (en) | 1996-10-24 | 1996-10-24 | Multistage low pressure plasma cleaning process |
Country Status (1)
Country | Link |
---|---|
DE (1) | DE19644153A1 (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000050661A1 (en) * | 1998-08-12 | 2000-08-31 | Swagelok Company | Low temperature case hardening processes |
DE10024373A1 (en) * | 2000-05-17 | 2001-11-29 | Eupec Gmbh & Co Kg | Coating process |
EP1260602A1 (en) * | 2001-05-23 | 2002-11-27 | Sulzer Metco AG | Process for producing a thermally insulating coating system on a metallic substrate |
US6547888B1 (en) | 2000-01-28 | 2003-04-15 | Swagelok Company | Modified low temperature case hardening processes |
EP1477188A1 (en) * | 2003-05-12 | 2004-11-17 | Terolab Services Management SA | Method for cleansing and bacterial decontamination of mechanical medical parts, and device therefor |
WO2004098259A2 (en) * | 2003-05-08 | 2004-11-18 | Kolektor Group D.O.O. | Plasma treatment for purifying copper or nickel |
WO2007137557A2 (en) * | 2006-05-30 | 2007-12-06 | Schaeffler Kg | Method for hardening running surfaces of roller bearing components |
EP2309039A1 (en) * | 2008-07-04 | 2011-04-13 | Showa Denko K.K. | Seed crystal for growth of silicon carbide single crystal, process for producing the same, and silicone carbide single crystal and process for producing the same |
-
1996
- 1996-10-24 DE DE1996144153 patent/DE19644153A1/en not_active Withdrawn
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2000050661A1 (en) * | 1998-08-12 | 2000-08-31 | Swagelok Company | Low temperature case hardening processes |
US6547888B1 (en) | 2000-01-28 | 2003-04-15 | Swagelok Company | Modified low temperature case hardening processes |
DE10024373B4 (en) * | 2000-05-17 | 2005-05-19 | eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG | Method for coating |
DE10024373A1 (en) * | 2000-05-17 | 2001-11-29 | Eupec Gmbh & Co Kg | Coating process |
EP1260602A1 (en) * | 2001-05-23 | 2002-11-27 | Sulzer Metco AG | Process for producing a thermally insulating coating system on a metallic substrate |
US8168261B2 (en) | 2001-05-23 | 2012-05-01 | Sulzer Metco A.G. | Process for applying a heat shielding coating system on a metallic substrate |
WO2004098259A2 (en) * | 2003-05-08 | 2004-11-18 | Kolektor Group D.O.O. | Plasma treatment for purifying copper or nickel |
WO2004098259A3 (en) * | 2003-05-08 | 2005-02-24 | Kolektor Group Doo | Plasma treatment for purifying copper or nickel |
EP1477188A1 (en) * | 2003-05-12 | 2004-11-17 | Terolab Services Management SA | Method for cleansing and bacterial decontamination of mechanical medical parts, and device therefor |
FR2854804A1 (en) * | 2003-05-12 | 2004-11-19 | Terolab Services Man Sa | PROCESS FOR CLEANING AND BACTERIAL DECONTAMINATION OF MECHANICAL PARTS FOR MEDICAL USE, AND DEVICE FOR CARRYING OUT SAID METHOD |
WO2007137557A2 (en) * | 2006-05-30 | 2007-12-06 | Schaeffler Kg | Method for hardening running surfaces of roller bearing components |
WO2007137557A3 (en) * | 2006-05-30 | 2008-12-11 | Schaeffler Kg | Method for hardening running surfaces of roller bearing components |
US8479396B2 (en) | 2006-05-30 | 2013-07-09 | Schaeffler Technologies AG & Co. KG | Method for hardening running surfaces of roller bearing components |
DE102006025008B4 (en) | 2006-05-30 | 2022-09-15 | Schaeffler Technologies AG & Co. KG | Process for hardening running surfaces of roller bearing components |
EP2309039A1 (en) * | 2008-07-04 | 2011-04-13 | Showa Denko K.K. | Seed crystal for growth of silicon carbide single crystal, process for producing the same, and silicone carbide single crystal and process for producing the same |
EP2309039A4 (en) * | 2008-07-04 | 2011-11-16 | Showa Denko Kk | Seed crystal for growth of silicon carbide single crystal, process for producing the same, and silicone carbide single crystal and process for producing the same |
CN102057084B (en) * | 2008-07-04 | 2013-03-27 | 昭和电工株式会社 | Seed crystal for growth of silicon carbide single crystal, process for producing the same, and silicone carbide single crystal and process for producing the same |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8139 | Disposal/non-payment of the annual fee |