DE1288174B - Metallischer UEberzug auf einer isolierenden Unterlage - Google Patents
Metallischer UEberzug auf einer isolierenden UnterlageInfo
- Publication number
- DE1288174B DE1288174B DEI23747A DEI0023747A DE1288174B DE 1288174 B DE1288174 B DE 1288174B DE I23747 A DEI23747 A DE I23747A DE I0023747 A DEI0023747 A DE I0023747A DE 1288174 B DE1288174 B DE 1288174B
- Authority
- DE
- Germany
- Prior art keywords
- layer
- metal
- coating
- base
- evaporation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000576 coating method Methods 0.000 title claims description 33
- 239000011248 coating agent Substances 0.000 title claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 19
- 229910052804 chromium Inorganic materials 0.000 claims description 15
- 239000011651 chromium Substances 0.000 claims description 15
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 239000010931 gold Substances 0.000 claims description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- 238000001704 evaporation Methods 0.000 claims description 8
- 230000008020 evaporation Effects 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010953 base metal Substances 0.000 claims description 3
- 230000007423 decrease Effects 0.000 claims description 3
- 238000005476 soldering Methods 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 2
- 230000008021 deposition Effects 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 238000007747 plating Methods 0.000 claims description 2
- 239000012808 vapor phase Substances 0.000 claims 2
- 239000000853 adhesive Substances 0.000 claims 1
- 230000001070 adhesive effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 34
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- -1 aluminum-gold Chemical compound 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- ZTXONRUJVYXVTJ-UHFFFAOYSA-N chromium copper Chemical compound [Cr][Cu][Cr] ZTXONRUJVYXVTJ-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002996 emotional effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
- C03C17/40—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal all coatings being metal coatings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/027—Graded interfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/041—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
- H01R4/02—Soldered or welded connections
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05644—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/05671—Chromium [Cr] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/06181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4918—Disposition being disposed on at least two different sides of the body, e.g. dual array
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01021—Scandium [Sc]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01025—Manganese [Mn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01042—Molybdenum [Mo]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01073—Tantalum [Ta]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01075—Rhenium [Re]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01083—Bismuth [Bi]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0495—5th Group
- H01L2924/04953—TaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19042—Component type being an inductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Combinations Of Printed Boards (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Physical Vapour Deposition (AREA)
Description
Vakuum aufgedampft werden, und zwar zusammen 15 die einen aus drei Teilschichten 2,3 und 4 bestehenmit
einer Haftzwischenschicht, die aus Kupfer den metallischen Überzug trägt. Die Teilschicht 2 ist
bestehen kann. Die Schichten können miteinander ein Grundüberzug aus Chrom, die Teilschicht 3 ist
legiert werden. eine Mischung aus Chrom und Gold, wobei die
Das Problem der guten Haftbarkeit an einer Mischung derart abgestuft ist, daß der Chromanteil
Unterlage ist auch in der deutschen Patentschrift 20 mit dem Abstand der Teilschicht von der Teil-656
875, der deutschen Auslegeschrift 1006 692 und schicht 2 gleichmäßig abnimmt. Die oberste Teilin
»Technische Rundschau« vom 30. 3.1961 auf schicht 4 besteht aus Gold.
den S. 33 und 35 behandelt. So schlägt die erst- Die Teilschicht 3 ist so abgestuft, daß der progenannte
Patentschrift vor, als gut haftende Schicht zentuale Anteil von Chrom an der Zwischenfläche
auf nichtmetallischen Werkstoffen, wie Glas, Por- 25 der Chromteilschicht 2 etwa 100% beträgt und bis
zellan oder Emaille, zuerst eine dünne Zwischen- auf 0% an der reinen Goldteilschicht 4 gleichmäßig
schicht eines Metalls der Eisengruppe oder von abnimmt.
Chrom, Wolfram oder Molybdän durch Kathoden- F i g. 2 in Form eines Diagramms die Zusammenzerstäubung
aufzubringen, während eine zweite Überzug mit dem Abstand von der Unterlage 1 sich
Schicht aus Silber oder Nickel besteht. Dieses Ver- 30 ändert. Die Symbole 1/2, 2/3,. 3/4 bezeichnen die
fahren dient der Herstellung von gut haftenden Berührungsflächen zwischen der Unterlage 1, der
Oberflächenspiegelschichten. Die genannte Auslege- Teilschicht 2 usw. Die abgestufte Teilschicht 3 kann
schrift verfährt bei der Herstellung von fest haften- natürlich als aus sehr dünnen parallelliegenden
den Metallbelegungen, auf Unterlagen aller Art, homogenen Schichten bestehend betrachtet werden,
z. B. bei der Herstellung von Kondensatorbelägen 35 wobei jede Schicht einen festen Prozentsatz von
und Widerstandsschichten, durch Nacheinander- Chrom enthält, welcher vom Abstand der Zwischenaufdampfen
von mindestens zwei legierungsbildenden fläche 2/3 abhängt. (Die Teilschicht 2 besteht voll-Metallen
so, daß auf die isolierende Unterlage das ständig aus Chrom, wie oben ausgeführt.)
edlere der beiden Metalle aufgedampft wird, wobei Es ist anzunehmen, daß eine derartige Erzeugung
dieses positives Normalpotential besitzen soll, wäh- 40 eines metallischen Überzugs ein Minimum an
rend als unedles Metall Cadmium verwendet wird. scharfen Unstetigkeiten im Überzug ergibt und daß
Der Aufsatz in »Technische Rundschau« schließlich
beschäftigt sich mit den Eigenschaften und Herstellungsverfahren von Überzügen aus Platinmetallen
(Rhodium, Palladium) für gedruckte Schaltungen. 45
beschäftigt sich mit den Eigenschaften und Herstellungsverfahren von Überzügen aus Platinmetallen
(Rhodium, Palladium) für gedruckte Schaltungen. 45
Die Erfindung betrifft somit einen metallischen Überzug auf einer isolierenden Unterlage, wobei der
Überzug aus mehreren Teilschichten eines auf der Unterlage gut haftenden Metalls und eines zweiten,
weich lötbaren Metalls besteht, wobei sich ferner auf der Unterlage eine Teilschicht des gut haftenden
Metalls befindet und die oberste Teilschicht aus dem weich lötbaren Metall besteht und wobei die beiden
Metalle natürliche oder absichtlich zugefügte, die
Adhäsion und das Weichlöten aber nicht beeinträch- 55 enthalten, deren eine Seite auf eine Weise, die weiter
tigende Verunreinigungen enthalten können. unten beschrieben wird, chemisch gereinigt wurde,
Die bekannten metallischen Überzüge, insbeson- um den Überzug durch Verdampfung zu empfangen,
dere die aus zwei Schichten bestehenden, zeigen die Diese Seite ist gegen ein Paar von Gefäßen 6 und 7
Tendenz, unter mechanischer Beanspruchung zu ver- aus Molybdän gerichtet, die chemisch gereinigtes
sagen. Die Erfindung bezweckt daher die Schaffung 60 Chrom bzw. Gold enthalten. Die Gefäße 6 und 7
einer Zusammensetzung, in welcher die mechanische befinden sich in thermischem Kontakt mit den jewei-Festigkeit
des abgelagerten Überzugs größer ist als ligen Heizwicklungen 8 und 9, die von einer Strombei
den bekannten Überzügen. Diese Aufgabe wird quelle über getrennt steuerbare variable Widerstände
erfindungsgemäß dadurch gelöst, daß der prozentuale 10,10 a gespeist werden. Der bei 11 gezeigte Mittel-Anteil
des gut haftenden Metalls von Schicht zu 65 schirm gestattet, die Metalldämpfe erst kurz vor der
Schicht bis zur obersten Teilschicht kontinuierlich Ablagerung auf der Unterlage zu mischen. Weitere
oder stufenweise abnimmt. Führungsmittel können vorgesehen werden, um die
Nachfolgend wird die Erfindung sowie ein Ver- Dämpfe in das Mischungsgebiet zu führen.
die Anwesenheit solcher Unstetigkeiten den Überzug gegenüber mechanischen Spannungen empfindlicher
machen würde.
Chrom wurde im vorliegenden Beispiel als erste Teilschicht gewählt, weil es gute Adhäsionseigenschaft
an Glas aufweist, während Gold für die oberste Teilschicht verwendet wurde, da es weich
lötbar ist und an Luft nicht oxydiert.
Die Erzeugung des metallischen Überzugs der Fig. 1 wird jetzt unter Bezugnahme auf Fig. 3
beschrieben, in welcher Stützen, Klammern usw. zwecks Vereinfachung weggelassen sind. In einer
Glasglocke 5 ist eine hängende Glasunterlage 1
Die vorbereitete Seite der Unterlage 1 ist durch eine Platte 12, die in diesem Ausführungsbeispiel
aus rostfreiem Stahl besteht, zum Teil abgeschirmt. Diese Platte weist eine Öffnung auf, um den Dämpfen
zu gestatten, den Teil der Unterlage zu erreichen, auf dem der Überzug abzulagern ist. Die Öffnung in
der Platte 12 wird mittels eines Photoätzverfahrens hergestellt. Eine verstellbare Aluminiumabschlußklappe
13 ist vorgesehen, um eine Ablagerung der Dämpfe zu verhindern, wenn die Gefäße 6 und 7
heiß sind, jedoch keine Ablagerung erwünscht ist. Die Abschlußklappe 13 wird von außen magnetisch
bewegt.
Die Heizwicklungen sind von Strahlungsschirmen umhüllt (nicht gezeigt), um die unnötige Heizung
von Nachbarteilen und dadurch ihre unnötige Entgasung zu vermindern. Aus demselben Grund sind
die Wicklungen 8 und 9 um ungefähr 12,7 mm von der Grundplatte entfernt.
Im Betrieb wird der Druck innerhalb der Glocke 5 unter 0,0002 mm Hg gehalten, und das mit Chrom
gefüllte Gefäß 6 wird während 30 Sekunden bei geschlossener Klappe 13 auf 1880° C vorgeheizt. Die
Klappe 13 wird dann geöffnet, um die Unterlage frei zu machen, und die Ablagerung wird gemäß der
folgenden Tabelle ausgeführt:
Überzüge, die, wie oben beschrieben, abgelagert werden, widerstandsfähig sind, wenn sie auf Glas
oder wärmehärtenden Stoffen abgelagert werden und auch wenn der Überzug einen aufgebrachten
Aluminiumüberzug überdeckt, welcher eine Elektrode eines Aluminium-Quarz-Aluminium-Flächenkondensators
bildet. Als versucht wurde, mit einem Aluminium-Gold-Überzug eine Verbindung mit
einem solchen Kondensator zu machen, wurde festgestellt, daß die Aluminium-Aluminium-Bindung
nicht so widerstandsfähig war, wie es erwünscht gewesen wäre. Obwohl es sich mit dem Glas gut verbindet,
scheint das Aluminium ungeeignet zu sein, sich mit sich selbst zu verbinden.
Die gestrichelte Linie 14 in der F i g. 2 zeigt an, daß die Zusammensetzung der Teilschicht 3 nicht
notwendigerweise sich gleichmäßig ändern muß, sondern daß sie aus einer Anzahl diskreter Schichten
bestehen kann.
ao Wie oben angedeutet, ist der Vorteil der Erfindung
darin zu sehen, daß durch den kontinuierlichen oder abgestuften Übergang des gut haftenden Metalls in
das weich lötbare Metall die mechanische Festigkeit des Überzugs wesentlich verbessert wird, so daß das
Abheben der Teilschichten oder das Ablösen des gesamten Überzugs von der Unterlage vermieden
wird.
Temperatur | Temperatur | 7pft |
der Chromquelle in 0C |
der Goldquelle in 0C |
in Sekunden |
1880 | _ | 120 |
2100 | — | 60 |
2100 | 1310 | 180 |
2100 | 1520 | 30 |
2100 Abschalten nach | 1520 | 180 |
30 Sekunden |
30
35
Die Temperaturen wurden mit einem optischen
40
Pyrometer gemessen und sind auf mindestens ± 50° reproduzierbar. Diese Ablesungen sind als Beispiel
gegeben, und es kann von diesen abgewichen werden, ohne den resultierenden Überzug zu beeinflussen.
Nach Abschluß der Ablagerung sind, bevor das Vakuum aufgehoben wird, 10 Minuten Abkühlungszeit
erforderlich.
Der Überzug ist jetzt im wesentlichen so, wie er oben beschrieben und in F i g. 1 dargestellt ist. Er
ist nun lötbar. Es wurde gefunden, daß bei einem Chrom-Gold-Überzug kein Ausglühen nötig ist. Bei
einigen anderen Metallpaaren, wie Chrom—Kupfer,
ist ein Ausglühen nötig, und es soll in einer nicht oxydierenden Atmosphäre durchgeführt werden,
sonst würde eine Oxydschicht die Kupferfläche für Lötzwecke ungeeignet machen.
Die Oberfläche der Unterlage wird für das Anbringen des Überzugs durch Spülen in Azeton,
durch Rösten in Luft und dann kurz vor der Ablagerung durch eine 20minutige Ionenreinigung
bei 50 mA, 1,5 kV und bei einem Druck von 0,015 mm Hg vorbereitet.
Das zu verdampfende Chrom befindet sich im Gefäß 6 in der Form von Spänen. Diese werden
zuerst in eine Kohlenstofftetrachlorid- und Azetonlösung getaucht und dann 2 Minuten mit Ultraschall
gereinigt. Nachfolgend werden die Späne in Methanol gespült und in Luft bei 100° C getrocknet.
Es hat sich herausgestellt, daß Chrom-Gold-
Claims (10)
1. Metallischer Überzug auf einer isolierenden Unterlage, wobei der Überzug aus mehreren
Teilschichten eines auf der Unterlage gut haftenden Metalls und eines zweiten, weich lötbaren
Metalls besteht, wobei sich ferner auf der Unterlage eine Teilschicht des gut haftenden Metalls
befindet und die oberste Teilschicht aus dem weich lötbaren Metall besteht und wobei die
beiden Metalle natürliche oder absichtlich zugefügte, die Adhäsion und das Weichlöten aber
nicht beeinträchtigende Verunreinigungen enthalten können, dadurch gekennzeichnet,
daß der prozentuale Anteil des gut haftenden Metalls von Schicht zu Schicht bis zur
obersten Teilschicht kontinuierlich oder stufenweise abnimmt.
2. Überzug nach Anspruch 1, dadurch gekennzeichnet, daß die abgestufte Schicht eine Anzahl
homogener Teilschichten aufweist, deren prozentualer Anteil an haftendem Metall mit zunehmendem
Abstand von der Unterlage abnimmt.
3. Überzug nach Anspruch 1 und 2, dadurch gekennzeichnet, daß sich der prozentuale Anteil
an haftendem Metall in jeder Teilschicht höchstens um 20% von dem Anteil der darunterliegenden
Schicht unterscheidet.
4. Überzug nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß die oberste Teilschicht
aus weich lötbarem Metall eine definierte Dicke aufweist.
5. Überzug nach einem der Ansprüche 1 bis 4, dadurch gekennzeichnet, daß die Teilschicht aus
dem gut haftenden Metall auf der Unterlage eine definierte Dicke aufweist.
6. Überzug nach einem der Ansprüche 1 bis 5, dadurch gekennzeichnet, daß das haftende Metall
aus Chrom und das weich lötbare Metall aus Gold besteht.
7. Verfahren zur Ablagerung eines metallischen Überzugs auf einer isolierenden Unterlage nach
einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, daß das an der Unterlage gut haftende
Metall und das weich lötbare Metall gleichzeitig, jedoch getrennt derart verdampft werden, daß
die beiden Metalle sich in der Dampfphase mischen können und daß die Verdampfungsgeschwindigkeit des gut haftenden Metalls mit
zunehmender Überzugsdicke verringert wird.
8. Verfahren zur Ablagerung eines metallischen Überzugs auf einer Glasunterlage nach Anspruch
7, dadurch gekennzeichnet, daß ein Chromüberzug durch Verdampfung direkt auf der Unterlage abgelagert wird, daß eine abgestufte
Schicht von Chrom und Gold durch Verdampfung aus getrennten Verdampfungsquellen
auf den Chromüberzug abgelagert wird, wobei
10 die Metalle in der Dampfphase sich mischen können, bevor sie die Unterlage erreichen, und
daß die relative Verdampfungsgeschwindigkeit des Chroms bezüglich der des Goldes so vermindert
wird, daß schließlich eine dünne Schicht aus reinem Gold an der Oberfläche abgelagert
wird.
9. Verfahren nach Anspruch 8, dadurch gekennzeichnet, daß das Chrom für die Verdampfung
in Form von Spänen vorbereitet wird, die zuerst in eine Kohlenstofftetrachlorid- und
Azetonlösung eingetaucht, mit Ultraschall gereinigt und dann mit Methanol gespült werden.
10. Verfahren nach Anspruch 8 oder 9, dadurch gekennzeichnet, daß die Unterlage zuerst
mit Azeton gespült, in Luft erhitzt und durch Ionenreinigung unter geringem Druck gereinigt
wird.
Hierzu 1 Blatt Zeichnungen
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB20201/62A GB1010111A (en) | 1962-05-25 | 1962-05-25 | Vapour deposition of metallic films |
GB36013/62A GB1044689A (en) | 1962-09-21 | 1962-09-21 | Improvements in or relating to mountings for semi-conductor devices |
GB39650/62A GB1023531A (en) | 1962-05-25 | 1962-10-19 | Improvements in or relating to semiconductor devices |
DEST19973A DE1179280B (de) | 1962-11-09 | 1962-11-09 | Verfahren zur Herstellung von loetfaehigen Kontaktstellen |
GB48863/62A GB1024216A (en) | 1962-05-25 | 1962-12-28 | Improvements in or relating to circuit modules including semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1288174B true DE1288174B (de) | 1969-01-30 |
Family
ID=27512244
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DEI23747A Pending DE1288174B (de) | 1962-05-25 | 1963-05-21 | Metallischer UEberzug auf einer isolierenden Unterlage |
DE1963J0024586 Expired DE1302005C2 (de) | 1962-05-25 | 1963-10-18 | Verwendung eines metallischen ueberzugs als grossflaechiger anschluss fuer plenare halbleiterbauelemente |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE1963J0024586 Expired DE1302005C2 (de) | 1962-05-25 | 1963-10-18 | Verwendung eines metallischen ueberzugs als grossflaechiger anschluss fuer plenare halbleiterbauelemente |
Country Status (7)
Country | Link |
---|---|
US (1) | US3270256A (de) |
BE (3) | BE632739A (de) |
CH (3) | CH422927A (de) |
DE (2) | DE1288174B (de) |
GB (2) | GB1023531A (de) |
NL (3) | NL299522A (de) |
SE (1) | SE316221B (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2807350A1 (de) * | 1977-03-02 | 1978-08-24 | Sharp Kk | Fluessigkristall-anzeigevorrichtung in baueinheit mit einem integrierten schaltkreis |
DE2810523A1 (de) * | 1977-03-18 | 1978-09-21 | Nippon Mining Co | Leiterplatten fuer gedruckte schaltkreise und verfahren zu ihrer herstellung |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3266127A (en) * | 1964-01-27 | 1966-08-16 | Ibm | Method of forming contacts on semiconductors |
US3361592A (en) * | 1964-03-16 | 1968-01-02 | Hughes Aircraft Co | Semiconductor device manufacture |
US3325702A (en) * | 1964-04-21 | 1967-06-13 | Texas Instruments Inc | High temperature electrical contacts for silicon devices |
GB1052135A (de) * | 1964-11-09 | |||
US3477123A (en) * | 1965-12-21 | 1969-11-11 | Ibm | Masking technique for area reduction of planar transistors |
DE1283970B (de) * | 1966-03-19 | 1968-11-28 | Siemens Ag | Metallischer Kontakt an einem Halbleiterbauelement |
US3504430A (en) * | 1966-06-27 | 1970-04-07 | Hitachi Ltd | Method of making semiconductor devices having insulating films |
US3840982A (en) * | 1966-12-28 | 1974-10-15 | Westinghouse Electric Corp | Contacts for semiconductor devices, particularly integrated circuits, and methods of making the same |
US3480841A (en) * | 1967-01-13 | 1969-11-25 | Ibm | Solderable backside ohmic contact metal system for semiconductor devices and fabrication process therefor |
US3460003A (en) * | 1967-01-30 | 1969-08-05 | Corning Glass Works | Metallized semiconductor device with fired-on glaze consisting of 25-35% pbo,10-15% b2o3,5-10% al2o3,and the balance sio2 |
GB1258580A (de) * | 1967-12-28 | 1971-12-30 | ||
DE1789062C3 (de) * | 1968-09-30 | 1978-11-30 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von Metallkontaktschichten für Halbleiteranordnungen |
US3704166A (en) * | 1969-06-30 | 1972-11-28 | Ibm | Method for improving adhesion between conductive layers and dielectrics |
FR2048036B1 (de) * | 1969-06-30 | 1974-10-31 | Ibm | |
FR2547112B1 (fr) * | 1983-06-03 | 1986-11-21 | Thomson Csf | Procede de realisation d'un circuit hybride et circuit hybride logique ou analogique |
FR2986372B1 (fr) | 2012-01-31 | 2014-02-28 | Commissariat Energie Atomique | Procede d'assemblage d'un element a puce micro-electronique sur un element filaire, installation permettant de realiser l'assemblage |
KR102073790B1 (ko) * | 2013-12-09 | 2020-02-05 | 삼성전자주식회사 | 투과형 광 셔터 및 상기 투과형 광 셔터의 제조 방법 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE656875C (de) * | 1934-10-16 | 1938-02-16 | Dispersion Cathodique S A | Verfahren zur Herstellung festhaftender Metallschichten mittels Kathodenzerstaeubung |
DE1006692B (de) * | 1953-10-29 | 1957-04-18 | Siemens Ag | Verfahren zur Herstellung festhaftender Metallbelegungen auf Unterlagen aller Art |
GB874965A (en) * | 1958-07-09 | 1961-08-16 | G V Planer Ltd | Improvements in or relating to electrical circuits or circuit elements |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2973466A (en) * | 1959-09-09 | 1961-02-28 | Bell Telephone Labor Inc | Semiconductor contact |
US3199002A (en) * | 1961-04-17 | 1965-08-03 | Fairchild Camera Instr Co | Solid-state circuit with crossing leads and method for making the same |
-
0
- NL NL298258D patent/NL298258A/xx unknown
- BE BE637621D patent/BE637621A/xx unknown
- NL NL292995D patent/NL292995A/xx unknown
- NL NL299522D patent/NL299522A/xx unknown
- BE BE639640D patent/BE639640A/xx unknown
- BE BE632739D patent/BE632739A/xx unknown
-
1962
- 1962-10-19 GB GB39650/62A patent/GB1023531A/en not_active Expired
- 1962-12-28 GB GB48863/62A patent/GB1024216A/en not_active Expired
-
1963
- 1963-05-20 CH CH630763A patent/CH422927A/de unknown
- 1963-05-21 DE DEI23747A patent/DE1288174B/de active Pending
- 1963-10-01 US US312930A patent/US3270256A/en not_active Expired - Lifetime
- 1963-10-14 CH CH1256863A patent/CH468719A/de unknown
- 1963-10-18 DE DE1963J0024586 patent/DE1302005C2/de not_active Expired
- 1963-11-05 CH CH1357663A patent/CH424889A/de unknown
- 1963-11-08 SE SE12333/63A patent/SE316221B/xx unknown
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE656875C (de) * | 1934-10-16 | 1938-02-16 | Dispersion Cathodique S A | Verfahren zur Herstellung festhaftender Metallschichten mittels Kathodenzerstaeubung |
DE1006692B (de) * | 1953-10-29 | 1957-04-18 | Siemens Ag | Verfahren zur Herstellung festhaftender Metallbelegungen auf Unterlagen aller Art |
GB874965A (en) * | 1958-07-09 | 1961-08-16 | G V Planer Ltd | Improvements in or relating to electrical circuits or circuit elements |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2807350A1 (de) * | 1977-03-02 | 1978-08-24 | Sharp Kk | Fluessigkristall-anzeigevorrichtung in baueinheit mit einem integrierten schaltkreis |
DE2810523A1 (de) * | 1977-03-18 | 1978-09-21 | Nippon Mining Co | Leiterplatten fuer gedruckte schaltkreise und verfahren zu ihrer herstellung |
Also Published As
Publication number | Publication date |
---|---|
US3270256A (en) | 1966-08-30 |
CH424889A (de) | 1966-11-30 |
NL299522A (de) | 1900-01-01 |
GB1023531A (en) | 1966-03-23 |
BE637621A (de) | 1900-01-01 |
NL298258A (de) | 1900-01-01 |
BE639640A (de) | 1900-01-01 |
GB1024216A (en) | 1966-03-30 |
DE1302005B (de) | 1975-08-07 |
BE632739A (de) | 1900-01-01 |
CH468719A (de) | 1969-02-15 |
DE1302005C2 (de) | 1975-08-07 |
CH422927A (de) | 1966-10-31 |
SE316221B (de) | 1969-10-20 |
NL292995A (de) | 1900-01-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE1288174B (de) | Metallischer UEberzug auf einer isolierenden Unterlage | |
DE1446161C3 (de) | Supraleitendes Bauelement und Verfahren zu seiner Herstellung | |
DE2428373C2 (de) | Verfahren zum Herstellen von weichlötbaren Anschlußkontakten auf einer Halbleiteranordnung | |
DE1283970B (de) | Metallischer Kontakt an einem Halbleiterbauelement | |
DE2650466C2 (de) | Elektrischer Widerstand | |
DE3039927A1 (de) | Elektrischer widerstand und verfahren zur herstellung | |
DE1950126A1 (de) | Verfahren zur Aufringung isolierender Filme und elektronische Bauelemente | |
DE2832836A1 (de) | Verfahren zur herstellung von oberflaechenschichten mit verbesserten korrosionseigenschaften auf gegenstaenden aus eisen-chrom-legierungen | |
DE69514157T2 (de) | Metallisierung eines Ferriten mittels Oberflächenreduktion | |
DE19511001A1 (de) | Ozonisator und Verfahren zur Herstellung eines solchen | |
DE69116399T2 (de) | Verfahren zur Herstellung einer Schicht aus supraleitendem Oxyd | |
DE3786779T2 (de) | Mit einem keramischen Träger versehene, nicht verdampfbare Gettervorrichtung und Herstellungsverfahren derselben. | |
DE68919536T2 (de) | Vakuumschalterkontakte und Verfahren zur Herstellung derselben. | |
DE2063580C2 (de) | Verfahren zum Aufbringen einer transparenten, elektrisch leitfähigen Indiumoxidschicht | |
DE69302444T2 (de) | Verfahren zur Herstellung eines keramischen Überzuges mit metallischen Substraten | |
DE1275221B (de) | Verfahren zur Herstellung eines einen Tunneleffekt aufweisenden elektronischen Festkoerperbauelementes | |
DE2535569B2 (de) | Behälter für die Verdampfung von Metall | |
DE2450341A1 (de) | Halbleiterbauteile mit hitzebestaendigen metallschichten | |
DE1180466B (de) | Elektrischer Kontakt | |
DE2012063A1 (de) | Verfahren zum Herstellen von aus Alu minium Legierungen bestehenden Kontakt metallschichten an Halbleiterbauelementen | |
EP0160290B2 (de) | Kontaktwerkstoff | |
DE1765091C3 (de) | Verfahren zur Herstellung eines hochkonstanten Metallschichtwiderstandselementes | |
DE1521556A1 (de) | UEberzuege fuer niobbasische Legierungen | |
DE2649091A1 (de) | Verfahren zum abscheiden von leitenden schichten auf substraten | |
DE2540999B2 (de) | Elektrischer Steckkontakt mit einer Kontaktschicht aus einer Silber-Palladium-Legierung |