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DE112010004178T8 - Piezoelektrisches Bauelement und Verfahren zur Herstellung eines piezoelektrischen Bauelements - Google Patents

Piezoelektrisches Bauelement und Verfahren zur Herstellung eines piezoelektrischen Bauelements Download PDF

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Publication number
DE112010004178T8
DE112010004178T8 DE112010004178T DE112010004178T DE112010004178T8 DE 112010004178 T8 DE112010004178 T8 DE 112010004178T8 DE 112010004178 T DE112010004178 T DE 112010004178T DE 112010004178 T DE112010004178 T DE 112010004178T DE 112010004178 T8 DE112010004178 T8 DE 112010004178T8
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DE
Germany
Prior art keywords
piezoelectric component
producing
piezoelectric
component
Prior art date
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Active
Application number
DE112010004178T
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English (en)
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DE112010004178T5 (de
DE112010004178B4 (de
Inventor
Takashi Iwamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Publication of DE112010004178T5 publication Critical patent/DE112010004178T5/de
Application granted granted Critical
Publication of DE112010004178T8 publication Critical patent/DE112010004178T8/de
Publication of DE112010004178B4 publication Critical patent/DE112010004178B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H10N30/706—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings characterised by the underlying bases, e.g. substrates
    • H10N30/708—Intermediate layers, e.g. barrier, adhesion or growth control buffer layers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H03H9/02102—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02228—Guided bulk acoustic wave devices or Lamb wave devices having interdigital transducers situated in parallel planes on either side of a piezoelectric layer
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders or supports
    • H03H9/0504—Holders or supports for bulk acoustic wave devices
    • H03H9/0514—Holders or supports for bulk acoustic wave devices consisting of mounting pads or bumps
    • H03H9/0523—Holders or supports for bulk acoustic wave devices consisting of mounting pads or bumps for flip-chip mounting
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/072—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies
    • H10N30/073—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by laminating or bonding of piezoelectric or electrostrictive bodies by fusion of metals or by adhesives
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/88—Mounts; Supports; Enclosures; Casings
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/021—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the air-gap type

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Transducers For Ultrasonic Waves (AREA)
  • Piezo-Electric Transducers For Audible Bands (AREA)
DE112010004178.4T 2009-10-30 2010-10-26 Piezoelektrisches Bauelement und Verfahren zur Herstellung eines piezoelektrischen Bauelements Active DE112010004178B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009-250121 2009-10-30
JP2009250121 2009-10-30
PCT/JP2010/068886 WO2011052551A1 (ja) 2009-10-30 2010-10-26 圧電デバイスおよび圧電デバイスの製造方法

Publications (3)

Publication Number Publication Date
DE112010004178T5 DE112010004178T5 (de) 2012-12-06
DE112010004178T8 true DE112010004178T8 (de) 2013-02-07
DE112010004178B4 DE112010004178B4 (de) 2018-08-23

Family

ID=43921974

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112010004178.4T Active DE112010004178B4 (de) 2009-10-30 2010-10-26 Piezoelektrisches Bauelement und Verfahren zur Herstellung eines piezoelektrischen Bauelements

Country Status (4)

Country Link
US (2) US8889452B2 (de)
JP (1) JP5229399B2 (de)
DE (1) DE112010004178B4 (de)
WO (1) WO2011052551A1 (de)

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WO2013018603A1 (ja) * 2011-07-29 2013-02-07 株式会社村田製作所 弾性波デバイスの製造方法
JP5835329B2 (ja) * 2011-07-29 2015-12-24 株式会社村田製作所 圧電デバイス、および、圧電デバイスの製造方法
US8723277B2 (en) * 2012-02-29 2014-05-13 Infineon Technologies Ag Tunable MEMS device and method of making a tunable MEMS device
JP2013214954A (ja) * 2012-03-07 2013-10-17 Taiyo Yuden Co Ltd 共振子、周波数フィルタ、デュプレクサ、電子機器及び共振子の製造方法
JP6092535B2 (ja) * 2012-07-04 2017-03-08 太陽誘電株式会社 ラム波デバイスおよびその製造方法
US9646874B1 (en) * 2013-08-05 2017-05-09 Sandia Corporation Thermally-isolated silicon-based integrated circuits and related methods
CN106489238B (zh) * 2014-08-05 2019-04-12 株式会社村田制作所 压电谐振器的制造方法及压电谐振器
WO2016067924A1 (ja) 2014-10-27 2016-05-06 株式会社村田製作所 圧電デバイス、及び圧電デバイスの製造方法
JP6417849B2 (ja) * 2014-10-27 2018-11-07 株式会社村田製作所 圧電共振器、及び圧電共振器の製造方法
WO2016072270A1 (ja) * 2014-11-05 2016-05-12 株式会社村田製作所 圧電デバイス
WO2016093020A1 (ja) * 2014-12-08 2016-06-16 株式会社村田製作所 圧電デバイス、及び圧電デバイスの製造方法
WO2016098526A1 (ja) * 2014-12-18 2016-06-23 株式会社村田製作所 弾性波装置及びその製造方法
WO2016103925A1 (ja) * 2014-12-25 2016-06-30 株式会社村田製作所 弾性波装置及びその製造方法
US10256786B1 (en) * 2016-07-11 2019-04-09 Akoustis, Inc. Communication filter using single crystal acoustic resonator devices
US10855250B2 (en) * 2016-07-11 2020-12-01 Akoustis, Inc. Communication filter for LTE band 41
US11736088B2 (en) * 2016-11-15 2023-08-22 Global Communication Semiconductors, Llc Film bulk acoustic resonator with spurious resonance suppression
US10601391B2 (en) * 2016-11-15 2020-03-24 Global Communication Semiconductors, Llc. Film bulk acoustic resonator with spurious resonance suppression
DE102017102190B4 (de) * 2017-02-03 2020-06-04 Infineon Technologies Ag Membranbauteile und Verfahren zum Bilden eines Membranbauteils
US11764750B2 (en) 2018-07-20 2023-09-19 Global Communication Semiconductors, Llc Support structure for bulk acoustic wave resonator
US12155368B2 (en) 2018-07-20 2024-11-26 Global Communication Semiconductors, Llc Support structure for bulk acoustic wave resonator
JP7290941B2 (ja) 2018-12-27 2023-06-14 太陽誘電株式会社 弾性波デバイス、フィルタおよびマルチプレクサ
US11817839B2 (en) 2019-03-28 2023-11-14 Global Communication Semiconductors, Llc Single-crystal bulk acoustic wave resonator and method of making thereof
WO2021042342A1 (zh) * 2019-09-05 2021-03-11 刘宇浩 一种体声波谐振装置及一种体声波滤波器
WO2021042345A1 (zh) * 2019-09-05 2021-03-11 刘宇浩 一种体声波谐振装置的形成方法
US20210111701A1 (en) 2019-10-15 2021-04-15 Global Communication Semiconductors, Llc Bulk Resonator with Symmetrically Positioned Temperature Compensation Layers
CN110995196B (zh) * 2019-12-05 2023-11-10 瑞声科技(新加坡)有限公司 谐振器的制备方法和谐振器
WO2021109090A1 (zh) * 2019-12-05 2021-06-10 瑞声声学科技(深圳)有限公司 谐振器的制备方法和谐振器
WO2022186201A1 (ja) * 2021-03-01 2022-09-09 株式会社村田製作所 弾性波装置
WO2022210687A1 (ja) * 2021-03-31 2022-10-06 株式会社村田製作所 弾性波装置
WO2022210859A1 (ja) * 2021-03-31 2022-10-06 株式会社村田製作所 弾性波装置
WO2023033147A1 (ja) * 2021-09-06 2023-03-09 株式会社村田製作所 弾性波装置
WO2023085362A1 (ja) * 2021-11-11 2023-05-19 株式会社村田製作所 弾性波装置
CN115051676A (zh) * 2022-04-18 2022-09-13 电子科技大学 一种高频兰姆波谐振器及其制备方法
CN114553163B (zh) 2022-04-28 2022-09-06 深圳新声半导体有限公司 体声波谐振器的制造方法
CN114900147B (zh) * 2022-07-08 2022-11-01 深圳新声半导体有限公司 体声波谐振器及其制造方法
US12074586B2 (en) 2022-09-16 2024-08-27 Shenzhen Newsonic Technologies Co., Ltd. Structure and manufacturing method of surface acoustic wave filter with back electrode of piezoelectric layer
US20230011477A1 (en) * 2022-09-16 2023-01-12 Shenzhen Newsonic Technologies Co., Ltd. Structure and manufacturing method of surface acoustic wave filter with back electrode of piezoelectric layer
US12088271B2 (en) 2022-09-16 2024-09-10 Shenzhen Newsonic Technologies Co., Ltd. Structure and manufacturing method of surface acoustic wave filter with back electrode of piezoelectric layer
US20230188117A1 (en) * 2022-09-16 2023-06-15 Shenzhen Newsonic Technologies Co., Ltd. Structure and manufacturing method of surface acoustic wave filter with interdigital transducer
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Also Published As

Publication number Publication date
US9123885B2 (en) 2015-09-01
US20120205754A1 (en) 2012-08-16
DE112010004178T5 (de) 2012-12-06
JP5229399B2 (ja) 2013-07-03
JPWO2011052551A1 (ja) 2013-03-21
US20150035413A1 (en) 2015-02-05
WO2011052551A1 (ja) 2011-05-05
DE112010004178B4 (de) 2018-08-23
US8889452B2 (en) 2014-11-18

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