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DE1186556C2 - - Google Patents

Info

Publication number
DE1186556C2
DE1186556C2 DE1960S0069707 DES0069707A DE1186556C2 DE 1186556 C2 DE1186556 C2 DE 1186556C2 DE 1960S0069707 DE1960S0069707 DE 1960S0069707 DE S0069707 A DES0069707 A DE S0069707A DE 1186556 C2 DE1186556 C2 DE 1186556C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1960S0069707
Other versions
DE1186556B (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL264058D priority Critical patent/NL264058A/xx
Application filed filed Critical
Priority to DES69707A priority patent/DE1186556B/de
Priority to CH373361A priority patent/CH391900A/de
Priority to FR864648A priority patent/FR1296784A/fr
Priority to US125548A priority patent/US3292055A/en
Priority to GB27774/61A priority patent/GB969530A/en
Publication of DE1186556B publication Critical patent/DE1186556B/de
Application granted granted Critical
Publication of DE1186556C2 publication Critical patent/DE1186556C2/de
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H03K3/315Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/10Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes
    • H03F3/12Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes with Esaki diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Automation & Control Theory (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Nonlinear Science (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
DES69707A 1960-07-30 1960-07-30 Esaki-Diode mit erhoehter Kapazitaet und Verfahren zum Herstellen Granted DE1186556B (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
NL264058D NL264058A (de) 1960-07-30
DES69707A DE1186556B (de) 1960-07-30 1960-07-30 Esaki-Diode mit erhoehter Kapazitaet und Verfahren zum Herstellen
CH373361A CH391900A (de) 1960-07-30 1961-03-29 Tunnel-Diode mit Parallelkapazität
FR864648A FR1296784A (fr) 1960-07-30 1961-06-12 Diode tunnel avec capacité en parallèle
US125548A US3292055A (en) 1960-07-30 1961-07-20 Tunnel diode with parallel capacitance
GB27774/61A GB969530A (en) 1960-07-30 1961-07-31 A tunnel diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES69707A DE1186556B (de) 1960-07-30 1960-07-30 Esaki-Diode mit erhoehter Kapazitaet und Verfahren zum Herstellen

Publications (2)

Publication Number Publication Date
DE1186556B DE1186556B (de) 1965-02-04
DE1186556C2 true DE1186556C2 (de) 1965-09-30

Family

ID=7501175

Family Applications (1)

Application Number Title Priority Date Filing Date
DES69707A Granted DE1186556B (de) 1960-07-30 1960-07-30 Esaki-Diode mit erhoehter Kapazitaet und Verfahren zum Herstellen

Country Status (6)

Country Link
US (1) US3292055A (de)
CH (1) CH391900A (de)
DE (1) DE1186556B (de)
FR (1) FR1296784A (de)
GB (1) GB969530A (de)
NL (1) NL264058A (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994003850A2 (en) * 1992-08-06 1994-02-17 Massachusetts Institute Of Technology Bootstrapped current and voltage reference circuit utilizing an n-type negative resistance device
US5384530A (en) * 1992-08-06 1995-01-24 Massachusetts Institute Of Technology Bootstrap voltage reference circuit utilizing an N-type negative resistance device
RU172271U1 (ru) * 2016-11-18 2017-07-03 Федеральное государственное автономное образовательное учреждение высшего образования "Северо-Восточный федеральный университет имени М.К.Аммосова" Установка для динамического измерения вольт-амперной характеристики туннельных диодов

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2937114A (en) * 1959-05-29 1960-05-17 Shockley Transistor Corp Semiconductive device and method
NL135881C (de) * 1959-08-05
US3114864A (en) * 1960-02-08 1963-12-17 Fairchild Camera Instr Co Semiconductor with multi-regions of one conductivity-type and a common region of opposite conductivity-type forming district tunneldiode junctions

Also Published As

Publication number Publication date
DE1186556B (de) 1965-02-04
GB969530A (en) 1964-09-09
NL264058A (de)
US3292055A (en) 1966-12-13
CH391900A (de) 1965-05-15
FR1296784A (fr) 1962-06-22

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