DE102011079660A1 - Layer composite of a layer arrangement and an electrical or electronic component - Google Patents
Layer composite of a layer arrangement and an electrical or electronic component Download PDFInfo
- Publication number
- DE102011079660A1 DE102011079660A1 DE102011079660A DE102011079660A DE102011079660A1 DE 102011079660 A1 DE102011079660 A1 DE 102011079660A1 DE 102011079660 A DE102011079660 A DE 102011079660A DE 102011079660 A DE102011079660 A DE 102011079660A DE 102011079660 A1 DE102011079660 A1 DE 102011079660A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- arrangement
- composite
- noble metal
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002131 composite material Substances 0.000 title claims abstract description 74
- 229910000510 noble metal Inorganic materials 0.000 claims abstract description 51
- 150000002736 metal compounds Chemical class 0.000 claims abstract description 35
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 33
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 31
- 239000003638 chemical reducing agent Substances 0.000 claims abstract description 21
- 239000010970 precious metal Substances 0.000 claims abstract description 16
- 238000005245 sintering Methods 0.000 claims abstract description 9
- 230000009467 reduction Effects 0.000 claims abstract description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 24
- 150000001875 compounds Chemical class 0.000 claims description 23
- 239000004332 silver Substances 0.000 claims description 21
- 229910052709 silver Inorganic materials 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 15
- 238000006479 redox reaction Methods 0.000 claims description 14
- 238000005304 joining Methods 0.000 claims description 10
- 235000014113 dietary fatty acids Nutrition 0.000 claims description 9
- 239000000194 fatty acid Substances 0.000 claims description 9
- 229930195729 fatty acid Natural products 0.000 claims description 9
- 150000004665 fatty acids Chemical class 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- ZXSQEZNORDWBGZ-UHFFFAOYSA-N 1,3-dihydropyrrolo[2,3-b]pyridin-2-one Chemical compound C1=CN=C2NC(=O)CC2=C1 ZXSQEZNORDWBGZ-UHFFFAOYSA-N 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- LKZMBDSASOBTPN-UHFFFAOYSA-L silver carbonate Substances [Ag].[O-]C([O-])=O LKZMBDSASOBTPN-UHFFFAOYSA-L 0.000 claims description 7
- 229910001958 silver carbonate Inorganic materials 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- XDOFQFKRPWOURC-UHFFFAOYSA-N 16-methylheptadecanoic acid Chemical compound CC(C)CCCCCCCCCCCCCCC(O)=O XDOFQFKRPWOURC-UHFFFAOYSA-N 0.000 claims description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 4
- POULHZVOKOAJMA-UHFFFAOYSA-N dodecanoic acid Chemical compound CCCCCCCCCCCC(O)=O POULHZVOKOAJMA-UHFFFAOYSA-N 0.000 claims description 4
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 claims description 2
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 claims description 2
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 2
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 239000005639 Lauric acid Substances 0.000 claims description 2
- 239000005642 Oleic acid Substances 0.000 claims description 2
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 claims description 2
- 150000001412 amines Chemical class 0.000 claims description 2
- 235000019253 formic acid Nutrition 0.000 claims description 2
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 150000003138 primary alcohols Chemical class 0.000 claims description 2
- 150000003333 secondary alcohols Chemical class 0.000 claims description 2
- 229910001923 silver oxide Inorganic materials 0.000 claims description 2
- LMEWRZSPCQHBOB-UHFFFAOYSA-M silver;2-hydroxypropanoate Chemical compound [Ag+].CC(O)C([O-])=O LMEWRZSPCQHBOB-UHFFFAOYSA-M 0.000 claims description 2
- ORYURPRSXLUCSS-UHFFFAOYSA-M silver;octadecanoate Chemical compound [Ag+].CCCCCCCCCCCCCCCCCC([O-])=O ORYURPRSXLUCSS-UHFFFAOYSA-M 0.000 claims description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 5
- 238000001465 metallisation Methods 0.000 description 5
- 239000002105 nanoparticle Substances 0.000 description 5
- 229940100890 silver compound Drugs 0.000 description 5
- 150000003379 silver compounds Chemical class 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 5
- 239000007858 starting material Substances 0.000 description 5
- MPDDTAJMJCESGV-CTUHWIOQSA-M (3r,5r)-7-[2-(4-fluorophenyl)-5-[methyl-[(1r)-1-phenylethyl]carbamoyl]-4-propan-2-ylpyrazol-3-yl]-3,5-dihydroxyheptanoate Chemical compound C1([C@@H](C)N(C)C(=O)C2=NN(C(CC[C@@H](O)C[C@@H](O)CC([O-])=O)=C2C(C)C)C=2C=CC(F)=CC=2)=CC=CC=C1 MPDDTAJMJCESGV-CTUHWIOQSA-M 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- QGJOPFRUJISHPQ-UHFFFAOYSA-N Carbon disulfide Chemical compound S=C=S QGJOPFRUJISHPQ-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- BUHVIAUBTBOHAG-FOYDDCNASA-N (2r,3r,4s,5r)-2-[6-[[2-(3,5-dimethoxyphenyl)-2-(2-methylphenyl)ethyl]amino]purin-9-yl]-5-(hydroxymethyl)oxolane-3,4-diol Chemical compound COC1=CC(OC)=CC(C(CNC=2C=3N=CN(C=3N=CN=2)[C@H]2[C@@H]([C@H](O)[C@@H](CO)O2)O)C=2C(=CC=CC=2)C)=C1 BUHVIAUBTBOHAG-FOYDDCNASA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- -1 Lyes Substances 0.000 description 1
- 235000021355 Stearic acid Nutrition 0.000 description 1
- QCEUXSAXTBNJGO-UHFFFAOYSA-N [Ag].[Sn] Chemical compound [Ag].[Sn] QCEUXSAXTBNJGO-UHFFFAOYSA-N 0.000 description 1
- PQIJHIWFHSVPMH-UHFFFAOYSA-N [Cu].[Ag].[Sn] Chemical compound [Cu].[Ag].[Sn] PQIJHIWFHSVPMH-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 1
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000008117 stearic acid Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000000930 thermomechanical effect Effects 0.000 description 1
- 229910000969 tin-silver-copper Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
- B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
- B22F2007/042—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/20—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from solid metal compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04026—Bonding areas specifically adapted for layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05639—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05644—Gold [Au] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
- H01L2224/2731—Manufacturing methods by local deposition of the material of the layer connector in liquid form
- H01L2224/2732—Screen printing, i.e. using a stencil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
- H01L2224/2741—Manufacturing methods by blanket deposition of the material of the layer connector in liquid form
- H01L2224/27418—Spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
- H01L2224/2741—Manufacturing methods by blanket deposition of the material of the layer connector in liquid form
- H01L2224/27422—Manufacturing methods by blanket deposition of the material of the layer connector in liquid form by dipping, e.g. in a solder bath
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
- H01L2224/27444—Manufacturing methods by blanket deposition of the material of the layer connector in gaseous form
- H01L2224/2745—Physical vapour deposition [PVD], e.g. evaporation, or sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
- H01L2224/27444—Manufacturing methods by blanket deposition of the material of the layer connector in gaseous form
- H01L2224/27452—Chemical vapour deposition [CVD], e.g. laser CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
- H01L2224/2746—Plating
- H01L2224/27462—Electroplating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/275—Manufacturing methods by chemical or physical modification of a pre-existing or pre-deposited material
- H01L2224/27502—Pre-existing or pre-deposited material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29075—Plural core members
- H01L2224/2908—Plural core members being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29339—Silver [Ag] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83009—Pre-treatment of the layer connector or the bonding area
- H01L2224/8301—Cleaning the layer connector, e.g. oxide removal step, desmearing
- H01L2224/83011—Chemical cleaning, e.g. etching, flux
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
- H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/832—Applying energy for connecting
- H01L2224/83201—Compression bonding
- H01L2224/83203—Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1131—Sintering, i.e. fusing of metal particles to achieve or improve electrical conductivity
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1157—Using means for chemical reduction
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/12—Using specific substances
- H05K2203/121—Metallo-organic compounds
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Laminated Bodies (AREA)
- Powder Metallurgy (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Die Erfindung betrifft einen Schichtverbund, wobei der Schichtverbund mindestens eine elektrische oder elektronische Komponente und eine Schichtanordnung aus mehreren Schichten umfasst. Die Schichtanordnung ist aus zumindest einer ersten Schicht gebildet, welche zumindest eine organische Metallverbindung und/oder ein Edelmetalloxid enthält, wobei die organische Metallverbindung und/oder das Edelmetalloxid bei einer Temperaturbehandlung des Schichtverbundes oder der Schichtanordnung in das zugrunde liegende elementare Metall und/oder Edelmetall umgewandelt werden. Ferner weist die Schichtanordnung zumindest eine an die erste Schicht angrenzende zweite Schicht auf. Kennzeichnend für die Erfindung ist, dass die zumindest zweite Schicht ein Reduktionsmittel enthält, mittels welchem die Reduktion der organischen Metallverbindung und/oder des Edelmetalloxids zu dem elementaren Metall und/oder Edelmetall bei einer Temperatur unterhalb der Sintertemperatur des elementaren Metalls und/oder Edelmetalls erfolgt. Insgesamt ist nach Abschluss der Temperaturbehandlung innerhalb des Schichtverbundes eine Sinterverbindung ausgebildet.The invention relates to a layer composite, wherein the layer composite comprises at least one electrical or electronic component and a layer arrangement of a plurality of layers. The layer arrangement is formed from at least one first layer which contains at least one organic metal compound and / or one noble metal oxide, wherein the organic metal compound and / or the noble metal oxide is converted into the underlying elemental metal and / or precious metal during a temperature treatment of the layer composite or the layer arrangement become. Furthermore, the layer arrangement has at least one second layer adjoining the first layer. Characteristic of the invention is that the at least second layer contains a reducing agent, by means of which the reduction of the organic metal compound and / or the noble metal oxide to the elemental metal and / or noble metal takes place at a temperature below the sintering temperature of the elemental metal and / or precious metal. Overall, a sintered connection is formed after completion of the temperature treatment within the composite layer.
Description
Die Erfindung betrifft einen Schichtverbund enthaltend mindestens eine elektrische oder elektronische Komponente und eine Schichtanordnung gemäß dem Oberbegriff des Anspruchs 1 sowie eine Schaltungsanordnung, enthaltend einen Schichtverbund gemäß dem Anspruch 12. Weiterhin betrifft die Erfindung ein Verfahren zur Ausbildung eines Schichtverbunds gemäß dem Oberbegriff des Anspruchs 13. Ebenso betrifft die Erfindung eine Schichtanordnung oder eine Schichtgruppe zur Verwendung in einem Schichtverbund oder einer Schaltungsanordnung oder einem Verfahren zur Ausbildung eines Schichtverbunds gemäß dem Oberbegriff des Anspruchs 15. The invention relates to a layer composite containing at least one electrical or electronic component and a layer arrangement according to the preamble of claim 1 and to a circuit arrangement comprising a layer composite according to claim 12. Furthermore, the invention relates to a method for forming a layer composite according to the preamble of claim 13. The invention likewise relates to a layer arrangement or a layer group for use in a layer composite or a circuit arrangement or a method for forming a layer composite according to the preamble of claim 15.
Stand der Technik State of the art
Leistungselektronik wird in vielen Bereichen der Technik eingesetzt. Gerade in elektrischen oder elektronischen Geräten, in welchen große Ströme fließen, ist der Einsatz von Leistungselektronik unumgänglich. Die in der Leistungselektronik notwendigen Stromstärken führen zu einer Eigenerwärmung der entsprechenden elektrischen oder elektronischen Komponenten. Eine weitere thermische Belastung ist durch den Einsatz derartiger elektrischer oder elektronischer Geräte an Betriebsorten mit gegenüber der Raumtemperatur deutlich erhöhter Temperatur gegeben. Als Beispiele sind Steuergeräte im Automobilbereich zu nennen, die unmittelbar im Motorraum angeordnet sind. Dabei sind die Steuergeräte einem ständigen Temperaturwechsel ausgesetzt. Im Allgemeinen sind Temperaturwechsel und die sich dabei ergebende Temperaturbelastung für eine Leistungselektronik bis zu einer Temperatur von 200 Grad Celsius üblich. Es werden jedoch zunehmend auch darüber hinaus gehende Einsatztemperaturen gefordert. Power electronics are used in many areas of technology. Especially in electrical or electronic devices in which large currents flow, the use of power electronics is unavoidable. The currents required in the power electronics lead to a self-heating of the corresponding electrical or electronic components. Another thermal stress is given by the use of such electrical or electronic devices at operating locations with respect to the room temperature significantly elevated temperature. Examples include control devices in the automotive sector, which are located directly in the engine compartment. The control units are exposed to a constant temperature change. In general, temperature changes and the resulting temperature load for power electronics up to a temperature of 200 degrees Celsius are common. However, more and more operating temperatures are increasingly required.
Dadurch werden insgesamt erhöhte Anforderungen an die Zuverlässigkeit und die Funktionssicherheit von elektrischen oder elektronischen Geräten mit Leistungselektronik gestellt. As a result, overall increased demands are placed on the reliability and reliability of electrical or electronic devices with power electronics.
Üblicherweise erfolgt eine Anbindung von elektrischen oder elektronischen Komponenten – beispielsweise auf ein Trägersubstrat – durch eine Verbindungsschicht. Als eine derartige Verbindungsschicht sind Lotverbindungen, beispielsweise aus Zinn-Silber oder Zinn-Silber-Kupfer, bekannt. Der Einsatz von Lotverbindungen als Verbindungsschicht ist für Einsatztemperaturen bis 200 Grad Celsius möglich. Bei Einsatztemperaturen über 200 Grad Celsius kommt es zu nachlassenden mechanischen Eigenschaften der eingesetzten Lotverbindungen, da die in den Lotverbindungen enthaltenen Metalle bei hohen Temperaturen erweichen. Zusätzlich kommt es zur Rissbildung innerhalb der Lotverbindung. Ursache hierfür sind insbesondere unterschiedliche Ausdehnungskoeffizienten der Verbindungsschicht im Vergleich zu den zu fügenden elektrischen oder elektronischen Komponenten.Usually, a connection of electrical or electronic components - for example, to a carrier substrate - by a connecting layer. As such a bonding layer, solder joints such as tin-silver or tin-silver-copper are known. The use of solder joints as a bonding layer is possible for operating temperatures up to 200 degrees Celsius. At operating temperatures above 200 degrees Celsius, there are decreasing mechanical properties of the solder joints used, since the metals contained in the solder joints soften at high temperatures. In addition, cracking occurs within the solder joint. The reason for this is, in particular, different coefficients of expansion of the connecting layer in comparison to the electrical or electronic components to be joined.
Eingesetzt werden auch Sinterverbindungen, die bereits bei niedrigen Temperaturen verarbeitet werden können und die dennoch für einen Betrieb bei erhöhten Temperaturen geeignet sind. Die Patentanmeldung
Die
Offenbarung der ErfindungDisclosure of the invention
Vorteile der ErfindungAdvantages of the invention
Der Erfindung liegt die Aufgabe zu Grunde, einen Schichtverbund enthaltend mindestens eine elektrische oder elektronische Komponente und eine Schichtanordnung anzugeben, bei welchem in einfacher Weise die Ausbildung einer Verbindung innerhalb des Schichtverbundes und/oder der Schichtanordnung bei niedrigen Verarbeitungstemperaturen erfolgt. Gleichzeitig soll der Schichtverbund und/oder die Schichtanordnung unter nachfolgend auftretenden Betriebsbedingungen bei Temperaturen, die über der Verarbeitungstemperatur liegen, eingesetzt werden können. Darüber hinaus soll bei diesen Einsatztemperaturen und bei im Betrieb auftretenden Temperaturwechseln eine dauerhafte mechanische, thermische und/oder elektrische Verbindung innerhalb des Schichtverbundes und/oder der Schichtanordnung sichergestellt sein.The invention is based on the object of specifying a layer composite containing at least one electrical or electronic component and a layer arrangement in which the formation of a compound within the layer composite and / or the layer arrangement takes place in a simple manner at low processing temperatures. At the same time, the layer composite and / or the layer arrangement should be able to be used under operating conditions occurring below at temperatures which are above the processing temperature. In addition, a permanent mechanical, thermal and / or electrical connection within the layer composite and / or the layer arrangement should be ensured at these operating temperatures and occurring during operation temperature changes.
Ferner ist es Aufgabe, ein Verfahren zur Ausbildung eines derartigen Schichtverbundes und einer Schaltungsanordnung enthaltend einen derartigen Schichtverbund anzugeben. Furthermore, it is an object to provide a method for forming such a layer composite and a circuit arrangement containing such a layer composite.
Diese Aufgabe wird durch einen Schichtverbund bzw. eine Schaltungs- und eine Schichtanordnung mit den kennzeichnenden Merkmalen der unabhängigen Ansprüche gelöst. This object is achieved by a layer composite or a circuit and a layer arrangement with the characterizing features of the independent claims.
Der erfindungsgemäße Schichtverbund enthält mindestens eine elektrische oder elektronische Komponente und eine Schichtanordnung aus mehreren Schichten. Die Schichtanordnung ist gebildet aus zumindest einer ersten Schicht, welche zumindest eine organische Metallverbindung und/oder ein Edelmetalloxid enthält, wobei die organische Metallverbindung und/oder das Edelmetalloxid bei einer Temperaturbehandlung des Schichtverbundes oder der Schichtanordnung in das zugrunde liegende elementare Metall und/oder Edelmetall umgewandelt werden. Ferner weist die Schichtanordnung zumindest eine an die erste Schicht angrenzende zweite Schicht auf.The layer composite according to the invention contains at least one electrical or electronic component and a layer arrangement of a plurality of layers. The layer arrangement is formed from at least a first layer, which contains at least one organic metal compound and / or a noble metal oxide, wherein the organic metal compound and / or the noble metal oxide is converted into the underlying elemental metal and / or precious metal during a temperature treatment of the layer composite or the layer arrangement become. Furthermore, the layer arrangement has at least one second layer adjoining the first layer.
Kennzeichnend für die Erfindung ist, dass die zumindest zweite Schicht ein Reduktionsmittel enthält, mittels welchem die Reduktion der organischen Metallverbindung und/oder des Edelmetalloxids zu dem elementaren Metall und/oder Edelmetall bei einer Temperatur unterhalb der Sintertemperatur des elementaren Metalls und/oder Edelmetalls erfolgt. Bei einer Temperaturbehandlung erfolgt zwischen der organischen Metallverbindung und/oder dem Edelmetalloxid der zumindest ersten Schicht und dem Reduktionsmittel der zumindest zweiten Schicht eine Redoxreaktion, wodurch elementares Metall und/oder Edelmetall gebildet wird. Bei infolge der Redoxreaktion beispielsweise gebildetem elementarem Silber liegt dieses in Form von Nanopartikel vor. Das gebildete elementare Metall und/oder Edelmetall, beispielsweise in Form von Nanopartikel, bildet bei einer weiter andauernden Temperaturbehandlung eine Sinterverbindung innerhalb des Schichtverbundes aus. Bevorzugt sind die zumindest erste und die zumindest zweite Schicht durch die gebildete Sinterverbindung vollständig ersetzt. Characteristic of the invention is that the at least second layer contains a reducing agent, by means of which the reduction of the organic metal compound and / or the noble metal oxide to the elemental metal and / or noble metal takes place at a temperature below the sintering temperature of the elemental metal and / or precious metal. During a temperature treatment, a redox reaction takes place between the organic metal compound and / or the noble metal oxide of the at least first layer and the reducing agent of the at least second layer, whereby elemental metal and / or noble metal is formed. For example, in the case of elemental silver formed as a result of the redox reaction, this is in the form of nanoparticles. The elementary metal and / or precious metal formed, for example in the form of nanoparticles, forms a sintered compound within the layer composite when the temperature treatment continues. Preferably, the at least first and the at least second layer are completely replaced by the formed sintered compound.
Grundsätzlich wandeln sich organische Metallverbindungen oder Edelmetalloxide erst bei hohen Temperaturen durch Zersetzen in das zugrunde liegende elementare Metall oder Edelmetall um. In vorteilhafter Weise kann bei einem erfindungsgemäßen Schichtverbund die Umwandlung der in der ersten Schicht enthaltenen organischen Metallverbindung und/oder des Edelmetalloxids zum elementaren Metall und/oder Edelmetall aufgrund der ablaufenden Redoxreaktion in vorteilhafter Weise bereits bei niedrigen Verarbeitungstemperaturen erfolgen, insbesondere bei Verarbeitungstemperaturen unterhalb der Sintertemperatur des elementaren Metalls und/oder Edelmetalls. Dadurch ist es in vorteilhafter Weise möglich, dass über die Schichtanordnung verbundene Fügepartner, beispielsweise elektrische und/oder elektronische Komponenten einer elektronischen Schaltung, keinen hohen Temperaturen während der Ausbildung der Sinterverbindung ausgesetzt werden. Somit können temperaturempfindliche elektrische und/oder elektronische Komponenten in elektronischen Schaltungen elektrisch und/oder thermisch kontaktiert werden, die auf Grund der sonst üblichen zu hohen Prozesstemperaturen bei der Verbindungsherstellung nicht eingesetzt werden könnten.In principle, organic metal compounds or noble metal oxides only transform at high temperatures by decomposition into the underlying elemental metal or noble metal. In a layer composite according to the invention, the conversion of the organic metal compound and / or the noble metal oxide to the elemental metal and / or precious metal contained in the first layer can advantageously already be carried out at low processing temperatures, in particular at processing temperatures below the sintering temperature of the redox reaction elemental metal and / or precious metal. As a result, it is possible in an advantageous manner for joining partners connected via the layer arrangement, for example electrical and / or electronic components of an electronic circuit, to not be exposed to high temperatures during the formation of the sintered connection. Thus, temperature-sensitive electrical and / or electronic components can be electrically and / or thermally contacted in electronic circuits, which could not be used due to the usual too high process temperatures in the connection production.
Durch die in den abhängigen Ansprüchen aufgeführten Maßnahmen sind vorteilhafte Weiterbildungen und Verbesserungen des erfindungsgemäßen Schichtverbunds möglich.The measures listed in the dependent claims advantageous refinements and improvements of the layer composite according to the invention are possible.
Eine vorteilhafte Ausführungsform sieht vor, dass bei einer innerhalb der Schichtanordnung nur einseitig an die zumindest erste Schicht angrenzenden zweiten Schicht die erste Schicht beispielsweise eine Schichtdicke von ≤ 30 µm, insbesondere ≤ 20 µm, bevorzugt ≤ 10 µm, aufweist. Eine Redoxreaktion erfolgt durch einen direkten physischen Kontakt der Reaktionspartner. Durch das Vorsehen der oben genannten Schichtdicke für die zumindest erste Schicht ist sichergestellt, dass die enthaltene organische Metallverbindung und/oder das Edelmetalloxid weitgehend, bevorzugt vollständig, durch das Reduktionsmittel der zumindest zweiten Schicht zu dem zugrundeliegenden Metall und/oder Edelmetall reduziert wird. Die Reduktion der organischen Metallverbindung und/oder Edelmetalloxids erfolgt zuerst im Kontaktbereich der zumindest ersten und der zumindest zweiten Schicht. Die bereits reduzierten Bestandteile der ersten Schicht zerfallen dabei beispielsweise in Nanopartikel. Dadurch ergibt sich in diesem Bereich eine Porenstruktur der ersten Schicht. Diese Porenstruktur begünstigt, dass die noch nicht reduzierten Bestandteile der zumindest ersten Schicht weiterhin in physischen Kontakt mit dem Reduktionsmittel der zumindest zweiten Schicht gelangen können. An advantageous embodiment provides that, for a second layer adjoining the at least first layer within the layer arrangement, the first layer has, for example, a layer thickness of ≦ 30 μm, in particular ≦ 20 μm, preferably ≦ 10 μm. A redox reaction occurs through direct physical contact of the reactants. By providing the abovementioned layer thickness for the at least first layer, it is ensured that the contained organic metal compound and / or the noble metal oxide is largely, preferably completely, reduced to the underlying metal and / or precious metal by the reducing agent of the at least second layer. The reduction of the organic metal compound and / or noble metal oxide takes place first in the contact region of the at least first and the at least second layer. The already reduced constituents of the first layer decompose, for example, into nanoparticles. This results in a pore structure of the first layer in this area. This pore structure favors that the not yet reduced constituents of the at least first layer can continue to come into physical contact with the reducing agent of the at least second layer.
Eine weitere Verbesserung ergibt sich, wenn an die zumindest erste Schicht beidseitig eine zweite Schicht enthaltend ein Reduktionsmittel angeordnet ist. Dadurch erfolgt die Reduktion der organischen Metallverbindung und/oder des Edelmetalloxids der ersten Schicht ins elementare Metall bzw. Edelmetall beidseitig und so schneller. Alternativ kann bei dieser Ausführung die Schichtdicke der ersten Schicht größer vorgesehen werden als bei der obigen Ausführungsform, bei welcher die erste Schicht nur einseitig mit einer zweiten Schicht in physischen Kontakt steht. Die erste Schicht kann im Rahmen dieser Ausführungsform daher eine Schichtdicke von zum Beispiel ≤ 60 µm, insbesondere ≤ 40 µm, bevorzugt ≤ 20 µm, aufweisen.A further improvement results if a second layer containing a reducing agent is arranged on both sides of the at least first layer. As a result, the reduction of the organic metal compound and / or the noble metal oxide of the first layer into the elemental metal or precious metal takes place on both sides and thus faster. Alternatively, in this embodiment, the layer thickness of the first layer may be made larger than in the above embodiment in which the first layer is only in physical contact with a second layer on one side. The first layer can therefore in the context of this embodiment, a layer thickness of the Example ≤ 60 microns, in particular ≤ 40 microns, preferably ≤ 20 microns have.
Die Bedingungen für die Redoxreaktion zwischen der ersten und der zweiten Schicht werden weiterhin verbessert, wenn die Schichtanordnung bei der Temperaturbehandlung einem mechanischen Druck von außen ausgesetzt ist. Neben einer Erhöhung des physikalischen Kontakts der Reaktionspartner bewirkt der mechanische Druck zusätzlich, dass die Porosität der sich ausbildenden Sinterverbindung verringert wird.The conditions for the redox reaction between the first and the second layer are further improved if the layer arrangement is subjected to an external mechanical pressure during the temperature treatment. In addition to an increase in the physical contact of the reactants, the mechanical pressure additionally causes the porosity of the forming sintered compound is reduced.
Ferner ist besonders vorteilhaft, wenn zum Erreichen einer vollständigen Umwandlung der organischen Metallverbindung und/oder des Edelmetalloxids der zumindest ersten Schicht hierfür insgesamt eine ausreichende Menge an Reduktionsmittel vorgesehen ist. Besonders vorteilhaft ist in diesem Zusammenhang, wenn der Anteil des in der zweiten Schicht enthaltenem Reduktionsmittels in einem stöchiometrischem Verhältnis zum Anteil der in der ersten Schicht enthaltenen organischen Metallverbindung und/oder Edelmetalloxid vorliegt. Diese Betrachtung schließt alle direkt aneinander grenzenden ersten und zweiten Schichten innerhalb der Schichtanordnung des Schichtverbundes ein. Durch das Vorsehen eines derartigen stöchiometrischen Verhältnisses kann die Ausbildung einer Sinterverbindung auch in sauerstofffreier Atmosphäre erfolgen. Zusätzlich fallen infolge des stöchiometrischen Reduktionsprozesses nur geringe Mengen an gasförmigen Reaktionsprodukten an.Furthermore, it is particularly advantageous if, in order to achieve complete conversion of the organic metal compound and / or of the noble metal oxide of the at least first layer, a sufficient amount of reducing agent is provided for this purpose overall. In this context, it is particularly advantageous if the proportion of the reducing agent contained in the second layer is present in a stoichiometric ratio to the proportion of the organic metal compound and / or noble metal oxide contained in the first layer. This consideration includes all directly adjacent first and second layers within the layer arrangement of the layer composite. By providing such a stoichiometric ratio, the formation of a sintered compound can also take place in an oxygen-free atmosphere. In addition, due to the stoichiometric reduction process, only small amounts of gaseous reaction products are obtained.
Eine weitere vorteilhafte Ausführungsform ist gegeben, wenn die zumindest erste Schicht aus der organischen Metallverbindung und/oder dem Edelmetall besteht. Dadurch kann eine Sinterverbindung ausgebildet werden, welche ausschließlich das zugrunde liegende elementare Metall bzw. Edelmetall aufweist. Eine derartige Sinterverbindung weist eine hohe elektrische und/oder thermische Leitfähigkeit auf. A further advantageous embodiment is given if the at least first layer consists of the organic metal compound and / or the noble metal. As a result, a sintered connection can be formed which has exclusively the underlying elemental metal or noble metal. Such a sintered compound has a high electrical and / or thermal conductivity.
In Weiterbildung des erfindungsgemäßen Schichtverbundes ist die in der ersten Schicht enthaltene organische Metallverbindung ein Silbercarbonat, ein Silberlactat oder Silberstearat. Ebenso vorteilhaft ist es, wenn das in der ersten Schicht enthaltene Edelmetalloxid ein Silberoxid ist. Grundsätzlich wird bei diesen weiteren Ausführungsformen der jeweils genannte Ausgangswerkstoff bei einer Temperaturbehandlung zu Silber reduziert. Dadurch weist die dann gebildete Sinterverbindung aus Silber eine besonders hohe elektrische und/oder thermische Leitfähigkeit auf. Alternativ kann für die in der ersten Schicht enthaltene organische Metallverbindung ein Natriumcarbonat vorgesehen sein.In a further development of the layer composite according to the invention, the organic metal compound contained in the first layer is a silver carbonate, a silver lactate or silver stearate. It is likewise advantageous if the noble metal oxide contained in the first layer is a silver oxide. In principle, in these further embodiments, the respectively named starting material is reduced to silver during a temperature treatment. As a result, the sintered compound formed from silver has a particularly high electrical and / or thermal conductivity. Alternatively, sodium carbonate may be provided for the organic metal compound contained in the first layer.
In Weiterbildung der Erfindung ist das in der zweiten Schicht enthaltene Reduktionsmittel zumindest eine Fettsäure, insbesondere eine Isostearinsäure, eine Ölsäure oder eine Laurinsäure. Alternativ ist das Reduktionsmittel eine Mischung verschiedener Fettsäuren. In einer weiteren Alternative beinhaltet das in der zweiten Schicht enthaltene Reduktionsmittel zumindest einen Alkohol aus der Gruppe der primären oder sekundären Alkohole und/oder ein Amin und/oder eine Ameisensäure. Ferner ist besonders vorteilhaft, wenn die zweite Schicht aus elementarem Kohlenstoff besteht, da dieser nicht flüchtig ist und in einem einfachen Beschichtungsprozess aufgebracht werden kann.In a development of the invention, the reducing agent contained in the second layer is at least one fatty acid, in particular an isostearic acid, an oleic acid or a lauric acid. Alternatively, the reducing agent is a mixture of different fatty acids. In a further alternative, the reducing agent contained in the second layer comprises at least one alcohol from the group of primary or secondary alcohols and / or an amine and / or a formic acid. Furthermore, it is particularly advantageous if the second layer consists of elemental carbon, since this is non-volatile and can be applied in a simple coating process.
In einer vorteilhaften Ausführung des erfindungsgemäßen Schichtverbundes ist an die zumindest erste und/oder zumindest zweite Schicht zumindest eine weitere metallische Schicht angrenzend angeordnet. Insbesondere ist die weitere Schicht aus einem Edelmetall, bevorzugt aus Silber, Gold, Platin, Palladium und/oder Kupfer ausgeführt. Dadurch ist im Wesentlichen eine Mindestdicke der Schichtanordnung innerhalb des Schichtverbundes einstellbar. Dies gilt insbesondere für den Fall, dass für die zumindest erste Schicht eine geringe Schichtstärke vorgesehen ist, um einen möglichst hohen Anteil an aus der organischen Metallverbindung bzw. Edelmetalloxid reduziertem elementarem Metall bzw. Edelmetall zu erhalten. Besonders vorteilhaft ausgeführt kann die weitere metallische Schicht als Beschichtung eines Einlegeteiles vorgesehen sein. Das Einlegeteil weist eine erste und/oder eine zweite mit der Beschichtung versehenen Großfläche auf. Das Einlegeteil ist mit der Beschichtung zumindest einer Großfläche an die erste und/oder zweite Schicht angeordnet. Das Material des Einlegeteils ist mit einem an den Schichtverbund angepassten thermischen Ausdehnungskoeffizienten ausgewählt und weist bevorzugt einen niedrigen Elastizitätsmodul auf. In an advantageous embodiment of the layer composite according to the invention, at least one further metallic layer is arranged adjacent to the at least first and / or at least second layer. In particular, the further layer is made of a noble metal, preferably of silver, gold, platinum, palladium and / or copper. As a result, essentially a minimum thickness of the layer arrangement within the laminar structure can be set. This applies in particular to the case where a low layer thickness is provided for the at least first layer in order to obtain the highest possible proportion of elemental metal or precious metal reduced from the organic metal compound or noble metal oxide. With particular advantage, the further metallic layer can be provided as a coating of an insert. The insert has a first and / or a second large area provided with the coating. The insert is arranged with the coating of at least one large area on the first and / or second layer. The material of the insert is selected with a coefficient of thermal expansion adapted to the layer composite and preferably has a low elastic modulus.
In einer vorteilhaften Weiterbildung der Erfindung ist die Schichtanordnung aus mindesten drei Schichten gebildet. Dabei weist die Schichtanordnung zumindest eine erste und eine zweite Schicht der bereits beschriebenen Ausführungsformen auf. In einer weiteren Ausführungsvariante kann angrenzenden an die erste und/oder zweite Schicht zusätzlich noch eine weitere metallische Schicht, wie bereits in den vorher beschriebenen Ausführungsformen, vorgesehen sein, beispielsweise auch als Beschichtung eines Einlegeteils. Besonders vorteilhaft ist eine Ausführungsform, bei welcher bei mindestens drei innerhalb der Schichtanordnung aneinander angrenzenden Schichten die erste und die zweite Schicht alternierend angeordnet sind. Auf diese Weise bildet sich nach einer Temperaturbehandlung aus den alternierend angeordneten ersten und zweiten Schichten eine durchgehende Sinterverbindung aus. Je mehr erste und zweite Schichten alternierend angeordnet vorgesehen werden, weist die durchgehend gebildete Sinterverbindung eine zunehmende Schichtdicke auf. Somit lässt sich eine Mindestschichtdicke der auszubildenden Sinterverbindung durch die Anzahl an alternierend zueinander angrenzend angeordneten ersten und zweiten Schichten einstellen. Die Durchgängigkeit der gebildeten Sinterverbindung ergibt sich Insbesondere dann, wenn für die zumindest erste Schicht eine geringe Schichtdicke vorgesehen ist, so dass eine bevorzugt vollständige Umwandlung der in der ersten Schicht enthaltenen organischen Metallverbindung und/oder Edelmetalloxids in das elementare Metall und/oder Edelmetall erfolgt.In an advantageous development of the invention, the layer arrangement is formed from at least three layers. In this case, the layer arrangement has at least a first and a second layer of the embodiments already described. In a further embodiment, adjacent to the first and / or second layer may additionally be provided a further metallic layer, as already in the previously described embodiments, for example as a coating of an insert. Particularly advantageous is an embodiment in which at least three layers adjacent to one another within the layer arrangement, the first and the second layer are arranged alternately. In this way, after a temperature treatment, a continuous sintered connection is formed from the alternately arranged first and second layers. The more first and second layers arranged alternately be provided, the continuously formed sintered compound has an increasing layer thickness. Thus, a minimum layer thickness of the sintered compound to be formed can be adjusted by the number of first and second layers arranged alternately adjacent to one another. The patency of the formed sintered compound results, in particular, if a small layer thickness is provided for the at least first layer, so that a preferably complete conversion of the organic metal compound and / or noble metal oxide contained in the first layer into the elemental metal and / or noble metal takes place.
In einer besonders vorteilhaften Weiterbildung des erfindungsgemäßen Schichtverbundes ist die Schichtanordnung aus mindesten fünf Schichten gebildet. Hierbei ist bei zumindest fünf innerhalb der Schichtanordnung aneinander angrenzenden Schichten die mittlere Schicht als die bereits oben genannte weitere metallische Schicht ausgeführt. Besonders vorteilhaft ist, wenn die weitere Schicht aus dem elementaren Metall der organischen Metallverbindung und/oder Edelmetalloxids der ersten Schicht ausgeführt ist. Des Weiteren sind die jeweils an die mittlere Schicht angrenzenden beiden äußeren Schichten jeweils durch die erste und die zweite Schicht gebildet. In vorteilhafter Weise ist die mittlere Schicht somit durch die beiden äußeren Schichten eingeschlossen und gegenüber Umwelteinflüssen gekapselt. Eine derartige Schichtanordnung ist lagerungsfähig, insbesondere aus dem Grund, dass eine nachteilige Oxidation der mittleren Schicht, beispielsweise aus Silber, unterbunden wird. Ferner sind dann nach einer Temperaturbehandlung an die mittlere Schicht angrenzend aus den jeweils beiden äußeren Schichten jeweils eine Sinterverbindung ausgebildet. Alternativ kann anstelle der mittleren Schicht ein wie weiter oben bereits genanntes beschichtetes Einlegeteil vorgesehen sein.In a particularly advantageous development of the layer composite according to the invention, the layer arrangement is formed from at least five layers. Here, in at least five layers adjacent to one another within the layer arrangement, the middle layer is designed as the further metallic layer already mentioned above. It is particularly advantageous if the further layer is made of the elemental metal of the organic metal compound and / or noble metal oxide of the first layer. Furthermore, the two outer layers adjacent to the middle layer are each formed by the first and the second layer. Advantageously, the middle layer is thus enclosed by the two outer layers and encapsulated against environmental influences. Such a layer arrangement is storable, in particular for the reason that a disadvantageous oxidation of the middle layer, for example of silver, is prevented. Furthermore, a sintered connection is then formed in each case after a temperature treatment to the middle layer adjacent to the respective two outer layers. Alternatively it can be provided instead of the middle layer as already mentioned above coated insert.
In Weiterbildung der Erfindung ist es besonders vorteilhaft, wenn die mittlere Schicht ein Sinterformteil ist. In einer vorteilhaften Ausführung ist die erste und/oder zweite Schicht zumindest derart bezogen auf das Sinterformteil angeordnet, dass deren Material zumindest teilweise den äußeren Randbereich des Sinterformteils durchdringt. Dies ist ohne weiteres möglich, da das Sinterformteil porös ausgebildet ist. Eine nachfolgend infolge einer Temperaturbehandlung aus der ersten und zweiten Schicht ausgebildete Sinterverbindung ist auf diese Weise besonders gut mit dem Sinterformteil verbunden. In a further development of the invention, it is particularly advantageous if the middle layer is a sintered shaped part. In an advantageous embodiment, the first and / or second layer is arranged at least in relation to the sintered molded part such that its material at least partially penetrates the outer edge region of the sintered molded part. This is easily possible, since the sintered molded part is porous. A sintered connection formed as a result of a temperature treatment of the first and second layer is in this way particularly well connected to the sintered molded part.
Bei den oben aufgezeigten Ausführungsformen, bei welcher die Schichtanordnung zumindest eine weitere Schicht aufweist, ist die weitere Schicht bevorzugt in der Funktion einer spannungskompensierenden Schicht ausgebildet. Sie bewirkt so insbesondere einen Ausgleich von thermischen Ausdehnungsvorgängen der im Schichtverbund beteiligten Fügepartner. Der Ausgleich der unterschiedlichen thermischen Ausdehnungsvorgänge findet dabei sowohl während der Ausbildung des Schichtverbundes als auch im Betrieb des Schichtverbundes statt, insbesondere bei im Betrieb auftretenden Temperaturwechseln. Dies wird ermöglicht, indem die spannungskompensierende Schicht mit einem kleinen Ausdehnungskoeffizienten und/ oder geringem Elastizitätsmodul ausgeführt wird und insbesondere innerhalb der Schichtanordnung einen Ausdehnungskoeffizienten aufweist, der an die benachbarten Fügepartner angepasst ist. Ferner ist vorteilhaft, wenn die spannungskompensierende Schicht einen kleineren Ausdehnungskoeffizienten aufweist, als die der mindestens einen elektrischen oder elektronischen Komponente zugrundeliegenden Materialien. Besonders bevorzugt wird die spannungskompensierende Schicht in der Mitte oder zumindest in unmittelbarer Nähe zur Mitte der Schichtanordnung bzw. des Schichtverbundes angeordnet. Durch diese Anordnung wird erreicht, dass der jeweilige Ausdehnungskoeffizient der beteiligten Fügepartner ausgehend von der spannungskompensierenden Schicht in Richtung der weiter außen innerhalb der Schichtanordnung oder im Schichtverbund angeordneten Fügepartner zueinander abgestimmt angepasst ist. Dadurch können über den gesamten Bereich der Verarbeitungstemperatur und der Einsatztemperatur die mechanischen und/oder thermomechanischen Spannungen innerhalb des Schichtverbundes bzw. der Schichtanordnung minimiert werden. Vor allem können Schädigungen in Form von Rissbildungen innerhalb des Schichtverbundes bzw. der Schichtanordnung vermieden werdenIn the above-mentioned embodiments, in which the layer arrangement has at least one further layer, the further layer is preferably formed in the function of a stress-compensating layer. In particular, it effects a compensation of thermal expansion processes of the joining partners involved in the layer composite. The compensation of the different thermal expansion processes takes place both during the formation of the layer composite and during operation of the layer composite, in particular occurring during operation temperature changes. This is made possible by carrying out the stress-compensating layer with a small expansion coefficient and / or low modulus of elasticity and, in particular, having an expansion coefficient within the layer arrangement which is adapted to the adjacent joining partners. Furthermore, it is advantageous if the stress-compensating layer has a smaller coefficient of expansion than the materials underlying at least one electrical or electronic component. Particularly preferably, the stress-compensating layer is arranged in the middle or at least in the immediate vicinity of the center of the layer arrangement or of the layer composite. By means of this arrangement it is achieved that the respective expansion coefficient of the joining partners involved, starting from the stress-compensating layer, is matched to one another in the direction of the joining partners disposed further outward within the layer arrangement or in the layer composite. As a result, the mechanical and / or thermo-mechanical stresses within the laminar structure or the layer arrangement can be minimized over the entire range of the processing temperature and the operating temperature. Above all, damage in the form of cracking within the laminar structure or the layer arrangement can be avoided
Eine vorteilhafte Ausführungsform ergibt sich weiterhin, wenn die erste und/oder die zweite Schicht die mindestens eine elektrische oder elektronische Komponente, insbesondere mechanisch, thermisch und/oder elektrisch kontaktiert. Dabei kann die mindestens eine elektrische oder elektronische Komponente beispielsweise ein Schaltungsträger, insbesondere ein DBC-Substrat, oder ein LTCC-Substrat, ein Stanzgitter, eine Leiterplatte bzw. ein aktives oder passives Bauelement, insbesondere ein Leistungshalbleiter oder IC, sein. Des Weiteren kann die mindestens eine elektrische oder elektronische Komponente bereits eine Metallisierung auf ihrer Fügefläche aufweisen. Bevorzugt ist die Metallisierung ein Edelmetall, insbesondere aus Gold, Silber oder einer Legierung aus Gold oder Silber.An advantageous embodiment also results if the first and / or the second layer contacts the at least one electrical or electronic component, in particular mechanically, thermally and / or electrically. In this case, the at least one electrical or electronic component can be, for example, a circuit carrier, in particular a DBC substrate, or an LTCC substrate, a stamped grid, a printed circuit board or an active or passive component, in particular a power semiconductor or IC. Furthermore, the at least one electrical or electronic component may already have a metallization on its joining surface. The metallization is preferably a noble metal, in particular of gold, silver or an alloy of gold or silver.
Der erfindungsgemäße Schichtverbund ist bevorzugt Teil einer Schaltungsanordnung. Eine derartige Schaltungsanordnung kann beispielsweise ein Steuergerät bilden, welches in einem Kraftfahrzeug betrieben wird. Insgesamt kann die Schaltungsanordnung an Einsatzorten betrieben werde, an welchen eine gegenüber der Raumtemperatur deutlich erhöhte Einsatztemperatur vorliegt, beispielsweise im Motorraum eines Kraftfahrzeuges. The layer composite according to the invention is preferably part of a circuit arrangement. Such a circuit arrangement may for example form a control unit which is operated in a motor vehicle. On the whole, the circuit arrangement can be operated at locations where one clearly shows room temperature increased use temperature is present, for example in the engine compartment of a motor vehicle.
Die Erfindung betrifft weiterhin ein Verfahren zur Ausbildung eines Schichtverbundes. Erfindungsgemäß wird in einem ersten Schritt ein Rohschichtverbund enthaltend mindestens eine elektrische oder elektronische Komponente und eine Schichtanordnung ausgebildet. Dabei enthält die Schichtanordnung mindestens eine erste Schicht aus einer organischen Metallverbindung und/oder einem Edelmetalloxid und eine an die erste Schicht angrenzende zweite Schicht, wobei die zweite Schicht ein Reduktionsmittel zur Reduktion der organischen Metallverbindung und/oder des Edelmetalloxids zu dem elementaren Metall und/oder Edelmetall bei einer Temperatur unterhalb der Sintertemperatur des elementaren Metalls und/oder Edelmetalls enthält.The invention further relates to a method for forming a layer composite. According to the invention, a raw layer composite containing at least one electrical or electronic component and a layer arrangement is formed in a first step. In this case, the layer arrangement contains at least a first layer of an organic metal compound and / or a noble metal oxide and a second layer adjacent to the first layer, wherein the second layer comprises a reducing agent for reducing the organic metal compound and / or the noble metal oxide to the elemental metal and / or Precious metal at a temperature below the sintering temperature of the elemental metal and / or precious metal.
In einem weiteren Schritt erfolgt eine Temperaturbehandlung des Rohschichtverbundes oder der Schichtanordnung unterhalb der Sintertemperatur des elementaren Metalls und/oder Edelmetalls, wodurch durch eine Redoxreaktion der ersten und der zweite Schicht die organische Metallverbindung und/oder Edelmetalloxid zu dem elementaren Metall und/oder Edelmetall reduziert wird. Abschließend wird der Schichtverbund mit zumindest einer Sinterverbindung ausgebildet, wobei die Sinterverbindung infolge der Redoxreaktion der ersten und der zweiten Schicht und der Temperaturbehandlung ausgebildet wird. In vorteilhafter Weise wird erfindungsgemäß eine Sinterverbindung bei bereits sehr niedrigen Verarbeitungstemperaturen ausgebildet, wobei die gebildete Sinterverbindung bei weitaus höheren Betriebstemperaturen als den Verarbeitungstemperaturen eingesetzt werden kann.In a further step, the crude layer composite or the layer arrangement is subjected to a temperature treatment below the sintering temperature of the elemental metal and / or noble metal, whereby the organic metal compound and / or noble metal oxide is reduced to the elemental metal and / or noble metal by a redox reaction of the first and the second layer , Finally, the composite layer is formed with at least one sintered compound, wherein the sintered compound is formed as a result of the redox reaction of the first and the second layer and the temperature treatment. Advantageously, according to the invention a sintered connection is formed at already very low processing temperatures, wherein the sintered compound formed can be used at much higher operating temperatures than the processing temperatures.
Die Schichtanordnung kann auch aus mehreren Schichtgruppen gebildet werden. So ist beispielsweise eine Möglichkeit gegeben, die Schichtanordnung aus einer ersten Schichtgruppe und einer auf der ersten Schichtgruppe angeordneten zweiten Schichtgruppe auszubilden. Eine Schichtgruppe kann hierbei aus einer oder auch aus mehreren Schichten bestehen. Bevorzugt wird die erste Schichtgruppe derart ausgebildet, dass sie zumindest die erste Schicht der Schichtanordnung und die zweite Schichtgruppe zumindest die zweite Schicht der Schichtanordnung enthält. Die erste und die zweite Schichtgruppe werden zur Ausbildung der Schichtanordnung in der Weise zueinander angeordnet, so dass die erste und die zweite Schicht aneinandergrenzen. Dadurch ergibt sich der Vorteil die Schichtanordnung flexibel aus verschiedenen Schichtgruppen bereitzustellen, wobei die Schichtgruppen in von einander unabhängigen Fertigungsprozessen hergestellt werden können.The layer arrangement can also be formed from a plurality of layer groups. Thus, for example, there is a possibility of forming the layer arrangement of a first layer group and a second layer group arranged on the first layer group. A layer group may consist of one or more layers. Preferably, the first layer group is formed in such a way that it contains at least the first layer of the layer arrangement and the second layer group contains at least the second layer of the layer arrangement. The first and the second layer group are arranged to form the layer arrangement in such a way to each other, so that the first and the second layer adjacent to each other. This results in the advantage of providing the layer arrangement flexibly from different layer groups, wherein the layer groups can be produced in mutually independent manufacturing processes.
In einer bevorzugten Ausführungsform wird die Schichtanordnung oder zumindest die erste Schichtgruppe als Preformteil bereitgestellt. Dabei ist die Möglichkeit gegeben, das Preformteil aus einem zuvor gefertigten Großnutzen auszubilden. Das Preformteil kann in Abhängigkeit zu der Ausgestaltung des auszubildenden Schichtverbundes in seiner Formgebung angepasst werden. Auf diese Weise können die Herstellkosten für die Schichtanordnung insgesamt gesenkt werden.In a preferred embodiment, the layer arrangement or at least the first layer group is provided as a preform part. In this case, the possibility is given to form the preform part of a previously produced great utility. The preform part can be adapted in its shape depending on the design of the layer composite to be formed. In this way, the manufacturing costs for the layer arrangement can be reduced overall.
Die zweite Schichtgruppe kann in vorteilhafter Weise auch als eine Metallisierung auf einer Fügefläche der mindestens einen elektrischen oder elektronischen Komponente aufgetragen werden. Eine Metallisierung stellt einen einfachen Prozess dar, eine Schicht der zweiten Schichtgruppe mit der Fügefläche der mindestens einen elektrischen oder elektronischen Komponente zu kontaktieren. The second layer group can also be advantageously applied as a metallization on a joining surface of the at least one electrical or electronic component. Metallization represents a simple process for contacting a layer of the second layer group with the joining surface of the at least one electrical or electronic component.
Kurze Beschreibung der ZeichnungenBrief description of the drawings
Weitere Vorteile, Merkmale und Einzelheiten der Erfindung ergeben sich aus der nachfolgenden Beschreibung bevorzugter Ausführungsbeispiele sowie anhand der Zeichnung. Diese zeigt in:Further advantages, features and details of the invention will become apparent from the following description of preferred embodiments and from the drawing. This shows in:
Temperaturbehandlungtemperature treatment
Ausführungsformen der ErfindungEmbodiments of the invention
In den Figuren sind funktional gleiche Bauteile jeweils mit gleichen Bezugszeichen gekennzeichnet. In the figures, functionally identical components are each identified by the same reference numerals.
Der Rohschichtverbund
Der Rohschichtverbund
Im Unterschied zum Rohschichtverbund
Die Ausbildung eines erfindungsgemäßen Schichtverbundes
Der Rohschichtverbund
Allgemein kann die Schichtanordnung
Ebenso ist es denkbar, das Preformteil nur für eine erste Schichtgruppe
Grundsätzlich erfolgt erfindungsgemäß die Reduktion der organischen Metallverbindung und/oder des Edelmetalloxids der ersten Schicht zu dem elementaren Metall und/oder Edelmetall bei einer Temperatur unterhalb 500°C, z.B. < 400°C, bevorzugt von < 300°C, insbesondere unterhalb 250°C beispielsweise unterhalb 200°C. Zur Verringerung der Porigkeit der dann ausgebildeten Sinterverbindung 50 kann ein Prozessdruck während der Temperaturbehandlung von < 40 MPa, zum Beispiel von < 4 MPA, vorgesehen werden, bevorzugt < 1,6 MPa, besonders bevorzugt < 0,8 MPa.In principle, according to the invention, the reduction of the organic metal compound and / or the noble metal oxide of the first layer to the elemental metal and / or noble metal at a temperature below 500 ° C, for example <400 ° C, preferably of <300 ° C, in particular below 250 ° C. for example below 200 ° C. To reduce the porosity of the
Die erste und/oder zweite und/oder weitere Schicht können zur Ausbildung einer Schichtanordnung
In ähnlicher Weise kann das Auftragen der zweiten Schicht durch ein Drucken, Tauchen oder Sprühen erfolgen. So kann beispielsweise eine als Reduktionsmittel vorgesehen Fettsäure, zum Beispiel eine Stearinsäure, zusammen mit einem Lösungsmittel, z.B. einen Alkohol, insbesondere Ethanol, als Suspension vorliegen. Es können auch andere Lösungsmittel, wie z.B. Laugen, Diethylether, Chloroform, Tetrachlormethan oder Schwefelkohlenstoff verwendet werden. Wesentlich ist, dass das Lösungsmittel bei moderaten Temperaturen unterhalb der Zersetzungstemperatur des vorgesehenen Reduktionsmittels wieder entfernt werden kann, beispielsweise unterhalb 150°C. Similarly, the application of the second layer may be by printing, dipping or spraying. Thus, for example, a fatty acid, for example a stearic acid, provided as a reducing agent may be used together with a solvent, e.g. an alcohol, in particular ethanol, as a suspension. Other solvents, e.g. Lyes, diethyl ether, chloroform, carbon tetrachloride or carbon disulfide. It is essential that the solvent at moderate temperatures below the decomposition temperature of the proposed reducing agent can be removed again, for example below 150 ° C.
ZITATE ENTHALTEN IN DER BESCHREIBUNG QUOTES INCLUDE IN THE DESCRIPTION
Diese Liste der vom Anmelder aufgeführten Dokumente wurde automatisiert erzeugt und ist ausschließlich zur besseren Information des Lesers aufgenommen. Die Liste ist nicht Bestandteil der deutschen Patent- bzw. Gebrauchsmusteranmeldung. Das DPMA übernimmt keinerlei Haftung für etwaige Fehler oder Auslassungen.This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.
Zitierte PatentliteraturCited patent literature
- DE 102007046901 A1 [0005] DE 102007046901 A1 [0005]
- DE 60221433 T2 [0006] DE 60221433 T2 [0006]
Claims (16)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011079660.6A DE102011079660B4 (en) | 2011-07-22 | 2011-07-22 | Layer composite of a layer arrangement and an electrical or electronic component, a circuit arrangement containing this layer composite and method for its formation |
PCT/EP2012/063224 WO2013013956A2 (en) | 2011-07-22 | 2012-07-06 | Layer composite composed of a layer arrangement and an electrical or electronic component |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011079660.6A DE102011079660B4 (en) | 2011-07-22 | 2011-07-22 | Layer composite of a layer arrangement and an electrical or electronic component, a circuit arrangement containing this layer composite and method for its formation |
Publications (2)
Publication Number | Publication Date |
---|---|
DE102011079660A1 true DE102011079660A1 (en) | 2013-01-24 |
DE102011079660B4 DE102011079660B4 (en) | 2023-06-07 |
Family
ID=46603890
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102011079660.6A Active DE102011079660B4 (en) | 2011-07-22 | 2011-07-22 | Layer composite of a layer arrangement and an electrical or electronic component, a circuit arrangement containing this layer composite and method for its formation |
Country Status (2)
Country | Link |
---|---|
DE (1) | DE102011079660B4 (en) |
WO (1) | WO2013013956A2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10002821B1 (en) | 2017-09-29 | 2018-06-19 | Infineon Technologies Ag | Semiconductor chip package comprising semiconductor chip and leadframe disposed between two substrates |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE60221433T2 (en) | 2001-12-27 | 2008-04-10 | Fujikura Ltd. | ELECTROPROCESSING COMPOSITION, ELECTROPROOF COATING AND METHOD FOR FORMING AN ELECTROPROCESS COATING |
EP2042260A2 (en) * | 2007-09-28 | 2009-04-01 | W.C. Heraeus GmbH | Method and paste for contacting metal surfaces |
DE102007046901A1 (en) | 2007-09-28 | 2009-04-09 | W.C. Heraeus Gmbh | Production of electrically conductive or heat-conductive component for producing metallic contact between two elements e.g. cooling bodies or solar cells, comprises forming elemental silver from silver compound between contact areas |
US20090142482A1 (en) * | 2007-11-30 | 2009-06-04 | Xerox Corporation | Methods of Printing Conductive Silver Features |
US20090181177A1 (en) * | 2008-01-14 | 2009-07-16 | Xerox Corporation | Methods for removing a stabilizer from a metal nanoparticle using a destabilizer |
DE102010000537A1 (en) * | 2009-03-11 | 2010-09-23 | Infineon Technologies Ag | Semiconductor arrangement with a spacer element |
DE102009040078A1 (en) * | 2009-09-04 | 2011-03-10 | W.C. Heraeus Gmbh | Metal paste with CO precursors |
EP2390914A1 (en) * | 2010-05-27 | 2011-11-30 | SEMIKRON Elektronik GmbH & Co. KG | Assembly of two connection partners with low temperature pressure interconnection and method for producing same |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006059904A (en) * | 2004-08-18 | 2006-03-02 | Toshiba Corp | Semiconductor device and its manufacturing method |
JP4895994B2 (en) * | 2006-12-28 | 2012-03-14 | 株式会社日立製作所 | Joining method and joining material using metal particles |
JP5012239B2 (en) | 2007-06-13 | 2012-08-29 | 株式会社デンソー | Joining method and joined body |
-
2011
- 2011-07-22 DE DE102011079660.6A patent/DE102011079660B4/en active Active
-
2012
- 2012-07-06 WO PCT/EP2012/063224 patent/WO2013013956A2/en active Application Filing
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE60221433T2 (en) | 2001-12-27 | 2008-04-10 | Fujikura Ltd. | ELECTROPROCESSING COMPOSITION, ELECTROPROOF COATING AND METHOD FOR FORMING AN ELECTROPROCESS COATING |
EP2042260A2 (en) * | 2007-09-28 | 2009-04-01 | W.C. Heraeus GmbH | Method and paste for contacting metal surfaces |
DE102007046901A1 (en) | 2007-09-28 | 2009-04-09 | W.C. Heraeus Gmbh | Production of electrically conductive or heat-conductive component for producing metallic contact between two elements e.g. cooling bodies or solar cells, comprises forming elemental silver from silver compound between contact areas |
US20090142482A1 (en) * | 2007-11-30 | 2009-06-04 | Xerox Corporation | Methods of Printing Conductive Silver Features |
US20090181177A1 (en) * | 2008-01-14 | 2009-07-16 | Xerox Corporation | Methods for removing a stabilizer from a metal nanoparticle using a destabilizer |
DE102010000537A1 (en) * | 2009-03-11 | 2010-09-23 | Infineon Technologies Ag | Semiconductor arrangement with a spacer element |
DE102009040078A1 (en) * | 2009-09-04 | 2011-03-10 | W.C. Heraeus Gmbh | Metal paste with CO precursors |
EP2390914A1 (en) * | 2010-05-27 | 2011-11-30 | SEMIKRON Elektronik GmbH & Co. KG | Assembly of two connection partners with low temperature pressure interconnection and method for producing same |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10002821B1 (en) | 2017-09-29 | 2018-06-19 | Infineon Technologies Ag | Semiconductor chip package comprising semiconductor chip and leadframe disposed between two substrates |
Also Published As
Publication number | Publication date |
---|---|
DE102011079660B4 (en) | 2023-06-07 |
WO2013013956A3 (en) | 2013-06-06 |
WO2013013956A2 (en) | 2013-01-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE102010021765B4 (en) | Manufacturing method for the arrangement of two connection partners by means of a low-temperature pressure sintered connection | |
EP2760613B1 (en) | Laminated composite made up of an electronic substrate and an arrangement of layers comprising a reaction solder | |
EP1208573B1 (en) | Anode for electrolytic capacitors, electrolytic capacitor and method of producing said anode | |
DE10238320A1 (en) | Ceramic circuit board and process for its manufacture | |
DE102012211952A1 (en) | Power semiconductor module with at least one stress-reducing matching element | |
EP2629911B1 (en) | Starter material for a sintering compound and method for producing said sintering compound | |
DE102011079660B4 (en) | Layer composite of a layer arrangement and an electrical or electronic component, a circuit arrangement containing this layer composite and method for its formation | |
DE102008034946B4 (en) | Production method of a noble metal compound | |
EP2382654A1 (en) | High-temperature-resistant component structure free of soldering agent, and method for electrical contact-connection | |
DE3740773A1 (en) | Method for producing electroconductive bonds | |
EP3695921B1 (en) | Sintered compound starting material and method for producing the sintered compound | |
EP2257148A2 (en) | Coated housing | |
DE102012208681A1 (en) | Tin coating, associated contact element and method for applying a tin coating | |
DE102006060801B4 (en) | Method for producing a chip card module and chip card module | |
DE102011083911A1 (en) | Electronic assembly with high-temperature-stable substrate base material | |
DE102017207329A1 (en) | Electronic assembly with a built between two substrates component and method for its preparation | |
DE102008034952B4 (en) | Noble metal compounding agents and methods of use for this purpose | |
EP3720639B1 (en) | Method for producing a structural unit and method for connecting a component to such a structural unit | |
DE102008034953A1 (en) | Noble metal compounding agents and methods of use for this purpose | |
DE102021116053A1 (en) | Electrical conductor, electronic assembly with an electrical conductor and method for manufacturing an electronic assembly with an electrical conductor | |
DE102015205695B4 (en) | Semiconductor component, contact arrangement and method of manufacture | |
DE102012216790A1 (en) | Contact arrangement for a multilayer circuit carrier and method for contacting a multilayer circuit carrier | |
DE102016223886A1 (en) | Method for producing a metal-ceramic substrate | |
DE102023204303A1 (en) | Sintering paste, method for electrically conductive, material-locking connection of an oxide-coated aluminum conductor to an electronic component and electronic product | |
DE102012221990A1 (en) | Connecting means for connecting at least two components using a sintering process |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
R163 | Identified publications notified | ||
R012 | Request for examination validly filed | ||
R016 | Response to examination communication | ||
R018 | Grant decision by examination section/examining division | ||
R020 | Patent grant now final |