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DE102010041541A8 - Verfahren zum Ausbilden einer Metallelektrode einer Halbleitereinrichtung und Vorrichtung zum Ausbilden einer Metallelektrode - Google Patents

Verfahren zum Ausbilden einer Metallelektrode einer Halbleitereinrichtung und Vorrichtung zum Ausbilden einer Metallelektrode Download PDF

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Publication number
DE102010041541A8
DE102010041541A8 DE102010041541A DE102010041541A DE102010041541A8 DE 102010041541 A8 DE102010041541 A8 DE 102010041541A8 DE 102010041541 A DE102010041541 A DE 102010041541A DE 102010041541 A DE102010041541 A DE 102010041541A DE 102010041541 A8 DE102010041541 A8 DE 102010041541A8
Authority
DE
Germany
Prior art keywords
forming
metal electrode
semiconductor device
electrode
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE102010041541A
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English (en)
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DE102010041541A1 (de
Inventor
Manabu Tomisaka
Hidetoshi Katou
Yutaka Fukuda
Akira Tai
Kazuo Akamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
Denso Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denso Corp filed Critical Denso Corp
Publication of DE102010041541A1 publication Critical patent/DE102010041541A1/de
Publication of DE102010041541A8 publication Critical patent/DE102010041541A8/de
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/30—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces
    • G01B11/306—Measuring arrangements characterised by the use of optical techniques for measuring roughness or irregularity of surfaces for measuring evenness
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0133—Ternary Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/52—Plural diverse manufacturing apparatus

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE102010041541A 2009-09-29 2010-09-28 Verfahren zum Ausbilden einer Metallelektrode einer Halbleitereinrichtung und Vorrichtung zum Ausbilden einer Metallelektrode Withdrawn DE102010041541A1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2009-225323 2009-09-29
JP2009225323 2009-09-29
JP2010-195812 2010-09-01
JP2010195812A JP4858636B2 (ja) 2009-09-29 2010-09-01 半導体装置の金属電極形成方法及び金属電極形成装置

Publications (2)

Publication Number Publication Date
DE102010041541A1 DE102010041541A1 (de) 2011-04-14
DE102010041541A8 true DE102010041541A8 (de) 2012-02-02

Family

ID=43734759

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102010041541A Withdrawn DE102010041541A1 (de) 2009-09-29 2010-09-28 Verfahren zum Ausbilden einer Metallelektrode einer Halbleitereinrichtung und Vorrichtung zum Ausbilden einer Metallelektrode

Country Status (4)

Country Link
US (1) US8263490B2 (de)
JP (1) JP4858636B2 (de)
CN (1) CN102034743B (de)
DE (1) DE102010041541A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5397366B2 (ja) * 2010-12-21 2014-01-22 ブラザー工業株式会社 圧電アクチュエータ装置
JP2013143500A (ja) * 2012-01-11 2013-07-22 Denso Corp 半導体装置の製造方法及び加工装置
JP2013187393A (ja) * 2012-03-08 2013-09-19 Tokyo Electron Ltd 貼り合わせ装置及び貼り合わせ方法
JP2014075408A (ja) * 2012-10-03 2014-04-24 Disco Abrasive Syst Ltd 保持テーブル及び保持方法
JP2016018957A (ja) * 2014-07-10 2016-02-01 富士通株式会社 半導体装置の実装方法、及び、半導体装置の実装装置
JP6733522B2 (ja) * 2016-11-29 2020-08-05 株式会社デンソー 撮像装置
KR101911766B1 (ko) * 2016-12-08 2018-10-26 한양대학교 산학협력단 반도체 기판용 진공 척 및 이를 이용한 검사 대상물의 검사 방법
JP7208759B2 (ja) * 2018-10-16 2023-01-19 株式会社ディスコ ウエーハ保持装置を用いたウエーハの加工方法
EP3869272A1 (de) * 2020-02-21 2021-08-25 ASML Netherlands B.V. Substrattisch und verfahren zur handhabung eines substrats

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US4737621A (en) * 1985-12-06 1988-04-12 Adaptive Optics Assoc., Inc. Integrated adaptive optical wavefront sensing and compensating system
JPH10112493A (ja) * 1996-08-13 1998-04-28 Sony Corp 表面矯正薄板保持装置、面調整手段及び向き調整手段
JPH1174242A (ja) 1997-06-30 1999-03-16 Hitachi Ltd 半導体装置の製造方法
JPWO2003052804A1 (ja) * 2001-12-17 2005-04-28 株式会社ニコン 基板保持装置、露光装置及びデバイス製造方法
JP4004843B2 (ja) * 2002-04-24 2007-11-07 Ｎｅｃエレクトロニクス株式会社 縦型ｍｏｓｆｅｔの製造方法
TWI277836B (en) * 2002-10-17 2007-04-01 Adv Lcd Tech Dev Ct Co Ltd Method and apparatus for forming pattern on thin-substrate or the like
JP2004158610A (ja) * 2002-11-06 2004-06-03 Nikon Corp 露光装置および露光方法
JP4325242B2 (ja) * 2003-03-27 2009-09-02 富士電機デバイステクノロジー株式会社 半導体装置の製造方法
JP4634045B2 (ja) * 2003-07-31 2011-02-16 富士通株式会社 半導体装置の製造方法、貫通電極の形成方法、半導体装置、複合半導体装置、及び実装構造体
JP4479611B2 (ja) 2004-12-03 2010-06-09 株式会社デンソー 半導体装置
US7518780B2 (en) * 2005-08-08 2009-04-14 Lawrence Livermore National Laboratory, Llc Nanolaminate deformable mirrors
JP2008171892A (ja) * 2007-01-09 2008-07-24 Toyota Motor Corp 半導体ウエハの支持装置
US7800232B2 (en) * 2007-03-06 2010-09-21 Denso Corporation Metallic electrode forming method and semiconductor device having metallic electrode
JP4466662B2 (ja) * 2007-03-06 2010-05-26 株式会社デンソー 半導体装置の金属電極形成方法
JP4618295B2 (ja) * 2007-07-26 2011-01-26 株式会社デンソー 半導体装置の金属電極形成方法
US7999213B2 (en) * 2008-09-30 2011-08-16 Teledyne Scientific & Imaging, Llc Compact high-speed thin micromachined membrane deformable mirror

Also Published As

Publication number Publication date
CN102034743B (zh) 2013-10-16
DE102010041541A1 (de) 2011-04-14
US8263490B2 (en) 2012-09-11
US20110207241A1 (en) 2011-08-25
CN102034743A (zh) 2011-04-27
JP4858636B2 (ja) 2012-01-18
JP2011097027A (ja) 2011-05-12

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