DE102019119917A1 - Silicided test device and test method for thermocouples without metal layers in one plane of a CMOS stack - Google Patents

Abstract

The invention relates to a device and a method for testing at least one silicided thermopile (TP1, TP2). In addition to the at least one thermopile, the device comprises a heating element (H1) and a control element (K1). The heating element (H1) and the control element (K1) are also free of metal layers. By applying an adjustable voltage (UH) to the connections of the heating element (H1), a defined temperature increase occurs at the first resistor (H1W1) of the heating element (H1). By comparing the voltage (UTP1, UTP2, UK) measured at the connection terminals of the first and second thermopile (TP1, TP2) and the control element (K1) with the set temperature increase at the first resistor (H1W1) of the heating element (H1), the functionality of the first thermopile (TP1) and the second thermopile (TP2) are checked.

Description

Generic term

The invention is directed to the realization of metal-layer-free thermocouples and metal-layer-free thermopiles in standard CMOS processes. The thermocouples and thermopiles according to the invention can be used in infrared sensors for person detection or in Halios systems for gesture recognition. It can also be used as a thermoelectric generator or as a cooling element.

General introduction

The use of thermopiles in sensitive thermoelectric infrared sensors for detecting people or movement is an alternative to the pyroelectric sensors that are often used for this purpose. The use of thermopiles is particularly advantageous when the most economical production possible in a CMOS process. A high degree of functional freedom of design is also advantageous for this.

State of the art

Infrared sensors for the detection of long-wave infrared radiation (4 <λ <14 µm) based on the thermoelectric effect, also known as the Seebeck effect, are often manufactured using CMOS technology. For the manufacture of thermocouples, a material available in the CMOS process with a high Seebeck coefficient, low thermal conductivity and low electrical resistance is required. CMOS-typical materials with negative and positive Seebeck coefficients are combined in a thermocouple to increase the thermoelectric signal. Possible combinations are, for example, polysilicon / aluminum, heavily p-doped polysilicon / aluminum, n-doped polysilicon / heavily p-doped silicon, or preferably n-doped polysilicon / p-doped polysilicon. In 1 to 4th typical constructions of thermocouples manufactured in a CMOS process according to the state of the art (SdT) are shown.

The production of an n-doped polysilicon / p-doped polysilicon thermocouple is implemented according to the state of the art (SdT) in the CMOS process using two separate polysilicon components with different polysilicon levels and at least two different wiring levels. The necessary electrically conductive connection of the thermocouples to a thermocouple is realized with aluminum, aluminum-silicon alloy or aluminum-copper alloy.

Disadvantages of the polysilicon thermocouples described, which are implemented by several polysilicon and metallization levels, are the necessary thick membrane layers of the integrated thermocouples and the resulting thick CMOS stacks. This also limits the functional design freedom in the CMOS stack. In addition, there is a high thermal mass and high thermal conductivity. This has a negative effect on the sensitivity of the infrared sensor.

The prior art (SdT) discloses the connection of metal and semiconductors in a standard CMOS process by siliciding with titanium atoms. The patent specification is an example DE 10 2014 013 482 B4 called. In CMOS processes, silicidation with other metal atoms, for example with nickel atoms or tungsten atoms or cobalt atoms, is also possible. For the purposes of this disclosure, silicides and similar compounds that have a metal-like conductivity in which the valence and conduction bands do not overlap at room temperature, but at least at absolute zero, are not regarded as metals. When “non-metallic” is mentioned, the presence of silicides or similar compounds does not lead to the loss of the “non-metallic” property.

task

The proposal is therefore based on the object of connecting thermocouples made of heavily n-doped and heavily p-doped polysilicon, instead of using an additional metal layer, to form a thermocouple in an electrically conductive manner by siliciding the polysilicon.

It is a further object of the present invention to connect thermocouples without metal layers to one another in an electrically conductive manner by siliciding the polysilicon to form a thermopile.

It is a further object of the present invention to improve the layout of the inventive thermopile without metal layers with regard to the packing density of the thermocouples and the simplest possible manufacture.

Another object of the invention is to use at least one inventive thermopile free of metal layers as a thermoelectric generator for providing electrical energy from thermal energy.

It is a further object of the invention to use at least one inventive thermopile free of metal layers as a cooling element, for example for electronic circuits.

It is a further object of the present invention to create a test possibility for at least one thermopile according to the invention by using a heating element free of metal layers and another thermoelectric sensor free of metal layers on the same substrate.

This object is achieved with a device according to claim 1 and a method according to claim 11.

It is a further object of the present invention to use self-testable thermopiles free of metal layers in motor vehicles.

It is a further object of the present invention to detect people or animals in the interior of motor vehicles by means of at least one thermopile free of metal layers according to the invention and to determine further properties of the people or animals, e.g. increased temperature, living or deceased.

Another object of the present invention is to operate an array of inventive thermopiles free of metal layers as an infrared camera. Such a device could be used in motor vehicles, for example, to provide additional information in order to improve the image of a rear-view camera in the dark.

It is a further object of the present invention to use at least one inventive thermopile free of metal layers as a receiver in a Halios device in a Halios system for gesture recognition.

It is a further object of the present invention to realize the thermopile free of metal layers without a membrane, as a cantilever arm.

It is a further object of the invention to realize a silicided sensor for electromagnetic radiation on a membrane.

Solution of the task

According to the invention, it was recognized that the silicidation of polycrystalline silicon - also called polysilicon in the following - with preferably titanium for electrical connection in the prior art (SdT) has not yet been used for the connection of thermocouples in CMOS technology. According to the invention, it was also recognized that this principle can also be applied to materials other than polycrystalline silicon.

In the case of a thermopile of the type described at the outset, the problem is solved according to the proposal in that thermocouples made of n- and p-doped polysilicon are electrically connected to one another by siliciding the polysilicon with titanium to form a thermocouple free of metal layers. Instead of titanium atoms, other metal atoms such as tungsten, cobalt or nickel atoms can also be used.

The thermocouples are preferably located in the same uninterrupted polysilicon level of the CMOS stack. The polysilicon layer is preferably between 200 nm and 300 nm thick. Part of this is silicided as described. The thickness of the silicidation is preferably between 40 nm and 80 nm.

P-doping can take place, for example, by implanting boron ions into the polysilicon. An n-doping can take place, for example, by implanting phosphorus or arsenic ions into the polysilicon. The p-doped polysilicon has a positive Seebeck coefficient. The n-doped polysilicon has a negative Seebeck coefficient. The electrically active thermocouple is formed at the contact point between the n- and p-doped polysilicon.

The thermocouples realized in this way can also be electrically connected by siliciding the polysilicon with titanium or with tungsten or with cobalt or with nickel or another suitable metal to form a so-called thermopile free of metal layers. In addition, further electrical connections to other components or further thermopiles can be realized by siliciding the polysilicon.

Thermopiles are also known as thermopiles or thermo chains in German-speaking countries. According to popular belief, a thermopile is an electrical component that converts thermal energy into electrical energy. It consists of several thermocouples, which are connected thermally in parallel and electrically in series, whereby the very low thermal voltages are added to a measurable total thermal voltage.

In the following, the detailed structure of a thermocouple described above is first shown using 5 explained. A simplified representation of the structure of the proposed thermocouple is given in 6 and in 7th shown. The in 6 The thermocouples shown result in different Seebeck coefficients of the two thermocouples made of differently doped polysilicon. The in 7th The different Seebeck coefficients of polysilicon and silicidation are decisive for the function of the respective thermocouple.

The proposed connection of several thermocouples to form a thermopile is then carried out using 8th explained. The arrangement of the individual thermocouples to form a thermopile can be designed differently. An arrangement that is particularly advantageous with regard to the packing density of the thermocouples and the manufacturing process is illustrated in FIG 10 shown.

A proposed thermocouple is, as shown in the cross section in 5 shown, built in a common first polysilicon layer (PS1). The polysilicon layer (PS1) is located on a first membrane (MEM1). The first membrane (MEM1) is made of a dielectric material, for example an oxide or a nitride. The first membrane (MEM1) can contain absorbers and / or absorber layers for infrared radiation. The first membrane (MEM1) is located on a first substrate (SUB1). The first substrate (SUB1) is preferably made of doped or undoped polysilicon. A first insulation layer (II) is located on the first polysilicon layer (PS1). Undoped material is also referred to below as undoped material.

The structure described below is achieved by etching the wafer from the front. However, it is just as possible to implement an analog structure by etching the wafer from the rear.

At a first distance (d1) from a first left side surface (LSF1) of the described stack, consisting of the first substrate (SUB1) and the first membrane (MEM1) and the first polysilicon layer (PS1) and the first insulation layer (11) , and at a third distance (d3) from a first rear side surface (HSF1) of the described stack, a first trench (G1) with a width (BG1) of the first trench (G1) and a length (LG1) of the first trench ( G1) and a height (HG1) of the first trench (G1) from the surface of the first insulation layer (I1) into the first substrate (SUB1).

At a second distance (d2) from a first right side surface (RSF1) of the described stack and at a fourth distance (d4) from the first rear side surface (HSF1) of the described stack, there is a second trench (G2) with a width (BG2 ) of the second trench (G2) and a length (LG2) of the second trench (G2) and a height (HG2) of the second trench (G2) from the surface of the first insulation layer (I1) into the first substrate (SUB1) .

The first distance (d1) is preferably equal to the second distance (d2). The third distance (d3) is preferably equal to the fourth distance (d4). The width (BG1) of the first trench (G1) is preferably equal to the width (BG2) of the second trench (G2). The length (LG1) of the first trench (G1) is preferably equal to the length (LG2) of the second trench (G2). The height (HG1) of the first trench (G1) is preferably equal to the height (HG2) of the second trench (G2).

A substrate-free first cavity (C1) is introduced between the first trench (G1) and the second trench (G2) below the first membrane (MEM1).

The substrate-free first cavity (C1) is used for thermal insulation. For this, the first cavity (C1) must be filled or vacuum-sealed (= evacuated) with a thermally poorly conductive material, e.g. with air or gas.

The first polysilicon layer (PS1) comprises a first thermocouple (TE1) and a second thermocouple (TE2) and a second silicidation (SI2) above the first cavity (C1). The second silicidation (SI2) is located between the first thermocouple (TE1) and the second thermocouple (TE2). The second silicidation (SI2) electrically connects the first thermocouple (TE1) and the second thermocouple (TE2) to one another. The second silicidation (SI2) results from silicidation of the polysilicon with suitable metal atoms, preferably with titanium atoms or, for example, with tungsten or with cobalt or with nickel atoms or atoms of another suitable metal.

The first thermocouple (TE1) consists of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) consists of heavily doped polysilicon of a second doping type. The first type of doping can be n-doping or p-doping.

The second doping type is p-doping, when the first doping type is n-doping. The second doping type is n-doping if the first doping type is p-doping.

The first polysilicon layer (PS1) comprises a first silicidation (SI1) between the first left side surface (LSF1) and the first trench (G1). The first polysilicon layer (PS1) comprises a third silicidation (SI3) between the first right-hand side surface (RSF1) and the second trench (G2). The first silicidation (SI1) consists of polysilicon silicided by means of titanium. The third silicidation (SI3) consists of polysilicon silicided by means of titanium. Instead of titanium atoms, other metal atoms such as cobalt and / or tungsten and / or nickel atoms can also be used. The first silicidation (SI1) and the third silicidation (SI3) are electrically conductive connection points for further thermocouples or other electronic components made of polysilicon.

Compared to the state-of-the-art (SdT) thermocouples in CMOS technology, which are shown in 1 to 4th are shown, the proposed structure described above results in a very flat CMOS stack. Since the thermocouples with positive and negative Seebeck coefficients and the electrically conductive connections are in the same layer of the CMOS stack, there is more functional design freedom and a simplified manufacturing process. The thermal capacity is lower.

6 shows a greatly simplified representation of a possible structure of the proposed thermocouple. This simplified representation illustrates the arrangement of thermocouples and silicidation relative to one another.

A nineteenth thermocouple (TE19) is adjacent to a twentieth thermocouple (TE20).

The nineteenth thermocouple (TE19) consists of heavily doped polysilicon of a first doping type. The twentieth thermocouple (TE20) consists of heavily doped polysilicon of a second doping type. The first type of doping can be n-doping or p-doping. The second doping type is p-doping when the first doping type is n-doping. The second doping type is n-doping if the first doping type is p-doping.

The nineteenth thermocouple (TE19) and the twentieth thermocouple (TE20) form a pn junction.

A twentieth silicidation (SI20) extends from the surface of the nineteenth thermocouple (TE19) and the twentieth thermocouple (TE20) to the nineteenth thermocouple (TE19) and into the twentieth thermocouple (TE20). The twentieth silicidation (SI20) does not, however, spatially separate the nineteenth thermocouple (TE19) and the twentieth thermocouple (TE20). Below the twentieth silicidation (SI20) there remains a pn junction, which is still formed by the nineteenth thermocouple (TE19) and the twentieth thermocouple (TE20).

The twentieth silicidation (SI20) consists of polysilicon that has been silicided by means of titanium atoms. Silicidation by means of other metal atoms, such as tungsten and / or cobalt and / or nickel atoms, is also possible.

7th again shows a greatly simplified illustration of a further possible structure of the proposed thermocouple, in which a silicidation acts as a thermocouple.

A twenty-first thermocouple (TE21) is adjacent to a twenty-second thermocouple (TE22). The twenty-first thermocouple (TE21) is made from undoped polysilicon or from doped polysilicon. The twenty-second thermocouple (TE22) is made of undoped polysilicon or of doped polysilicon and comprises a twenty-first silicidation (SI21). The twenty-first silicidation (SI21) now extends, for example, over the entire surface of the polysilicon of the twenty-second thermocouple (TE22).

For the use of the twenty-first thermocouple (TE21) and the twenty-second thermocouple (TE22) comprising the twenty-first silicidation (SI21) as a thermocouple, the different Seebeck coefficients of the twenty-first thermocouple (TE21) and the twenty-first silicidation (SI21) are decisive. The twenty-first thermocouple (TE21) and the twenty-second thermocouple (TE22) again preferably form a pn diode at the joint between them. A prerequisite for the formation of such a pn diode is that the twenty-first thermocouple (TE21) consists of doped polysilicon of a first conductivity type and that the twenty-second thermocouple (TE22) consists of doped polysilicon of a second conductivity type. For example, the first conductivity type can be n-doping and the second conductivity type can be p-doping.

The next step is the series connection of four proposed thermocouples to form a thermopile using 8th explained.

A first thermocouple (TC11) of a first thermocouple (TC1) is electrically connected to a second thermocouple (TC12) of the first thermocouple (TC1) by a fourth silicidation (SI4).

A first thermocouple (TC21) of a second thermocouple (TC2) is electrically connected to a second thermocouple (TC22) of the second thermocouple (TC2) by a fifth silicidation (SI5).

A first thermocouple (TC31) of a third thermocouple (TC3) is electrically connected by a sixth silicidation (SI6) to a second thermocouple (TC32) of the third thermocouple (TC3).

A first thermocouple (T41) of a fourth thermocouple (TC4) is electrically connected by a seventh silicidation (SI7) to a second thermocouple (TC42) of the fourth thermocouple (TC4).

A first thermocouple (T51) of a fifth thermocouple (TC5) is electrically connected to a second thermocouple (TC52) of the fifth thermocouple (TC5) through an eighth silicidation (SI8).

The second thermocouple (TC12) of the first thermocouple (TC1) is electrically connected to the first thermocouple (TC21) of the second thermocouple (TC2) via a ninth silicidation (SI9).

The second thermocouple (TC22) of the second thermocouple (TC2) is electrically connected to the first thermocouple (TC31) of the third thermocouple (TC3) via a tenth silicidation (SI10).

The second thermocouple (TC32) of the third thermocouple (TC3) is electrically connected to the first thermocouple (TC41) of the fourth thermocouple (TC4) via an eleventh silicidation (SI11).

The second thermocouple (TC42) of the fourth thermocouple (TC4) is electrically connected to the first thermocouple (TC51) of the fifth thermocouple (TC5) via a twelfth silicidation (SI12).

The first thermocouple (TC11) of the first thermocouple (TC1) is electrically connected to a first connection pad (P1) by a thirteenth silicidation (SI13).

The second thermocouple (TC52) of the fifth thermocouple (TC5) is electrically connected to a second connection pad (P2) through a fourteenth silicidation (SI14).

A temperature-dependent voltage (UT) is applied between the first connection pad (P1) and the second connection pad (P2).

The first thermocouple (TC11) of the first thermocouple (TC1) and the first thermocouple (TC12) of the second thermocouple (TC2) and the first thermocouple (TC31) of the third thermocouple (TC3) and the first thermocouple (TC41) of the fourth thermocouple (TC4) ) and the first thermocouple (TC51) of the fifth thermocouple (TC5) are strips of heavily doped polysilicon of a first doping type. The first type of doping is in 8th represented by vertical dashed lines. The first type of doping can be p- or n-doping.

The second thermocouple (TC1) of the first thermocouple (TC1) and the second thermocouple (TC22) of the second thermocouple (TC2) and the second thermocouple (TC32) of the third thermocouple (TC3) and the second thermocouple (TC42) of the fourth thermocouple (TC4) ) and the second thermocouple (TC52) of the fifth thermocouple (TC5) are strips of heavily doped polysilicon of a second doping type. The first type of doping is in 8th represented by horizontal dashed lines. The second doping type is p-doping when the first doping type is n-doping. The second doping type is n-doping if the first doping type is p-doping.

In the 8th and in 9 The arrangement of the thermocouples shown has the disadvantage that p-doped thermocouples and n-doped thermocouples are alternately adjacent to one another. The distance between the individual thermocouples is therefore largely due to the distances between n-doping and p-doping that are necessary in the production process.

An improved arrangement of the thermocouples is therefore proposed and based on 10 explained. 10 shows an example of the improved layout of a series connection of four thermocouple series connections to form a proposed thermopile. However, more thermocouple series connections can also be used. A thermocouple series circuit comprises eight thermocouples connected in series. First, the individual thermocouple series connections are described and then their series connection to form a thermopile and the layout of the thermopile.

The first thermocouple series circuit (S1) comprises a first thermocouple (S1E1) of the first thermocouple series circuit (S1) and a second thermocouple (S1E2) of the first thermocouple series circuit (S1) and a third thermocouple (S1E3) of the first thermocouple series circuit (S1) and a fourth thermocouple (S1E4) of the first thermocouple series circuit (S1) and a fifth thermocouple (S1E5) of the first thermocouple series circuit (S1) and a sixth thermocouple (S1E6) of the first thermocouple series circuit (S1) and a Seventh thermocouple (S1E7) of the first thermocouple series circuit (S1) and an eighth thermocouple (S1E8) of the first thermocouple series circuit (S1) and a first silicidation (S1S1) of the first thermocouple series circuit (S1) and a second silicidation (S1S2) the first thermocouple series circuit (S1) and a third Silicidation (S1S3) of the first thermocouple series circuit (S1) and a fourth silicidation (S1S4) of the first thermocouple series circuit (S1) and a fifth silicidation (S1S5) of the first thermocouple series circuit (S1) and a sixth silicidation (S1S6) of the first thermocouple series circuit (S1) and a seventh silicidation (S1S7) of the first thermocouple series circuit (S1).

The second thermocouple series circuit (S2) comprises a first thermocouple (S2E1) of the second thermocouple series circuit (S2) and a second thermocouple (S2E2) of the second thermocouple series circuit (S2) and a third thermocouple (S2E3) of the second thermocouple series circuit (S2) and a fourth thermocouple (S2E4) of the second thermocouple series circuit (S2) and a fifth thermocouple (S2E5) of the second thermocouple series circuit (S2) and a sixth thermocouple (S2E6) of the second thermocouple series circuit (S2) and a seventh thermocouple (S2E7) of the second thermocouple series circuit (S2) and an eighth thermocouple (S2E8) of the second thermocouple series circuit (S2) and a first silicidation (S2S1) of the second thermocouple series circuit (S2) and a second silicidation (S2S2) of the second thermocouple series circuit (S2) and a third silicidation (S2S3) of the second thermocouple series circuit (S2) and a fourth silicidation (S2S4) of the second thermocouple series circuit (S2) and a fifth silicidation (S2S5) of the second thermocouple series circuit (S2) and a sixth silicidation (S2S6) of the second thermocouple series circuit (S2) and a seventh silicidation (S2S7) of the second thermocouple series circuit (S2).

The third thermocouple series circuit (S3) comprises a first thermocouple (S3E1) of the third thermocouple series circuit (S3) and a second thermocouple (S3E2) of the third thermocouple series circuit (S3) and a third thermocouple (S3E3) of the third thermocouple series circuit (S3) and a fourth thermocouple (S3E4) of the third thermocouple series circuit (S3) and a fifth thermocouple (S3E5) of the third thermocouple series circuit (S3) and a sixth thermocouple (S3E6) of the third thermocouple series circuit (S3) and a Seventh thermocouple (S3E7) of the third thermocouple series circuit (S3) and an eighth thermocouple (S3E8) of the third thermocouple series circuit (S3) and a first silicidation (S3S1) of the third thermocouple series circuit (S3) and a second silicidation (S3S2) the third thermocouple series circuit (S3) and a third silicidation (S3S3) of the third thermocouple series circuit (S3) and a fourth silicidation (S3S4) of the third thermocouple series circuit (S3) and a fifth silicidation (S3S5) of the third thermocouple series circuit (S3) and a sixth silicidation (S3S6) of the third thermocouple series circuit (S3) and a seventh silicidation (S3S7) of the third thermocouple series circuit (S3).

The fourth thermocouple series circuit (S4) comprises a first thermocouple (S4E1) of the fourth thermocouple series circuit (S4) and a second thermocouple (S4E2) of the fourth thermocouple series circuit (S4) and a third thermocouple (S4E3) of the fourth thermocouple series circuit (S4) and a fourth thermocouple (S4E4) of the fourth thermocouple series circuit (S4) and a fifth thermocouple (S4E5) of the fourth thermocouple series circuit (S4) and a sixth thermocouple (S4E6) of the fourth thermocouple series circuit (S4) and a Seventh thermocouple (S4E7) of the fourth thermocouple series circuit (S4) and an eighth thermocouple (S4E8) of the fourth thermocouple series circuit (S4) and a first silicidation (S4S1) of the fourth thermocouple series circuit (S4) and a second silicidation (S4S2) the fourth thermocouple series circuit (S4) and a third silicidation (S4S3) of the fourth thermocouple series circuit (S4) and a fourth silicidation (S4S4) of the fourth thermocouple series circuit (S4) and a fifth silicidation (S4S5) of the fourth thermocouple series circuit (S4) and a sixth silicidation (S4S6) of the fourth thermocouple series circuit (S4) and a seventh silicidation (S4S7) of the fourth thermocouple series circuit (S4).

The first thermocouple (S1E1) of the first thermocouple series circuit (S1) is electrically connected to the second thermocouple (S1E2) of the first thermocouple series circuit (S1) through the first silicidation (S1S1) of the first thermocouple series circuit (S1). The second thermocouple (S1E2) of the first thermocouple series circuit (S1) is electrically connected to the third thermocouple (S1E3) of the first thermocouple series circuit (S1) through the second silicidation (S1S2) of the first thermocouple series circuit (S1). The third thermocouple (S1E3) of the first thermocouple series circuit (S1) is electrically connected to the fourth thermocouple (S1E4) of the first thermocouple series circuit (S1) through the third silicidation (S1S3) of the first thermocouple series circuit (S1). The fourth thermocouple (S1E4) of the first thermocouple series circuit (S1) is electrically connected to the fifth thermocouple (S1E5) of the first thermocouple series circuit (S1) through the fourth silicidation (S1S4) of the first thermocouple series circuit (S1). The fifth thermocouple (S1E5) of the first thermocouple series circuit (S1) is electrically connected to the sixth thermocouple (S1E6) of the first thermocouple series circuit (S1) through the fifth silicidation (S1S5) of the first thermocouple series circuit (S1). The sixth thermocouple (S1E6) of the first thermocouple series circuit (S1) is through the sixth Silicidation (S1S6) of the first thermocouple series circuit (S1) electrically connected to the seventh thermocouple (S1E7) of the first thermocouple series circuit (S1). The seventh thermocouple (S1E7) of the first thermocouple series circuit (S1) is electrically connected to the eighth thermocouple (S1E8) of the first thermocouple series circuit (S1) through the seventh silicidation (S1S7) of the first thermocouple series circuit (S1).

The first thermocouple (S2E1) of the second thermocouple series circuit (S2) is electrically connected to the second thermocouple (S2E2) of the second thermocouple series circuit (S2) through the first silicidation (S2S1) of the second thermocouple series circuit (S2). The second thermocouple (S2E2) of the second thermocouple series circuit (S2) is electrically connected to the third thermocouple (S2E3) of the second thermocouple series circuit (S2) through the second silicidation (S2S2) of the second thermocouple series circuit (S2). The third thermocouple (S2E3) of the second thermocouple series circuit (S2) is electrically connected to the fourth thermocouple (S2E4) of the second thermocouple series circuit (S2) through the third silicidation (S2S3) of the second thermocouple series circuit (S2). The fourth thermocouple (S2E4) of the second thermocouple series circuit (S2) is electrically connected to the fifth thermocouple (S2E5) of the second thermocouple series circuit (S2) through the fourth silicidation (S2S4) of the second thermocouple series circuit (S2). The fifth thermocouple (S2E5) of the second thermocouple series circuit (S2) is electrically connected to the sixth thermocouple (S2E6) of the second thermocouple series circuit (S2) through the fifth silicidation (S2S5) of the second thermocouple series circuit (S2). The sixth thermocouple (S2E6) of the second thermocouple series circuit (S2) is electrically connected to the seventh thermocouple (S2E7) of the second thermocouple series circuit (S2) through the sixth silicidation (S2S6) of the second thermocouple series circuit (S2). The seventh thermocouple (S2E7) of the second thermocouple series circuit (S2) is electrically connected to the eighth thermocouple (S2E8) of the second thermocouple series circuit (S2) through the seventh silicidation (S2S7) of the second thermocouple series circuit (S2).

The first thermocouple (S3E1) of the third thermocouple series circuit (S3) is electrically connected to the second thermocouple (S3E2) of the third thermocouple series circuit (S3) through the first silicidation (S3S1) of the third thermocouple series circuit (S3). The second thermocouple (S3E2) of the third thermocouple series circuit (S3) is electrically connected to the third thermocouple (S3E3) of the third thermocouple series circuit (S3) through the second silicidation (S3S2) of the third thermocouple series circuit (S3). The third thermocouple (S3E3) of the third thermocouple series circuit (S3) is electrically connected to the fourth thermocouple (S3E4) of the third thermocouple series circuit (S3) through the third silicidation (S3S3) of the third thermocouple series circuit (S3). The fourth thermocouple (S3E4) of the third thermocouple series circuit (S3) is electrically connected to the fifth thermocouple (S3E5) of the third thermocouple series circuit (S3) through the fourth silicidation (S3S4) of the third thermocouple series circuit (S3). The fifth thermocouple (S3E5) of the third thermocouple series circuit (S3) is electrically connected to the sixth thermocouple (S3E6) of the third thermocouple series circuit (S3) through the fifth silicidation (S3S5) of the third thermocouple series circuit (S3). The sixth thermocouple (S3E6) of the third thermocouple series circuit (S3) is electrically connected to the seventh thermocouple (S3E7) of the third thermocouple series circuit (S3) through the sixth silicidation (S3S6) of the third thermocouple series circuit (S3). The seventh thermocouple (S3E7) of the third thermocouple series circuit (S3) is electrically connected to the eighth thermocouple (S3E8) of the third thermocouple series circuit (S3) through the seventh silicidation (S3S7) of the third thermocouple series circuit (S3).

The first thermocouple (S4E1) of the fourth thermocouple series circuit (S4) is electrically connected to the second thermocouple (S4E2) of the fourth thermocouple series circuit (S4) through the first silicidation (S4S1) of the fourth thermocouple series circuit (S4). The second thermocouple (S4E2) of the fourth thermocouple series circuit (S4) is electrically connected to the third thermocouple (S4E3) of the fourth thermocouple series circuit (S4) through the second silicidation (S4S2) of the fourth thermocouple series circuit (S4). The third thermocouple (S4E3) of the fourth thermocouple series circuit (S4) is electrically connected to the fourth thermocouple (S4E4) of the fourth thermocouple series circuit (S4) through the third silicidation (S4S3) of the fourth thermocouple series circuit (S4). The fourth thermocouple (S4E4) of the fourth thermocouple series circuit (S4) is electrically connected to the fifth thermocouple (S4E5) of the fourth thermocouple series circuit (S4) through the fourth silicidation (S4S4) of the fourth thermocouple series circuit (S4). The fifth thermocouple (S4E5) of the fourth thermocouple series circuit (S4) is electrically connected to the sixth thermocouple (S4E6) of the fourth thermocouple series circuit (S4) through the fifth silicidation (S4S5) of the fourth thermocouple series circuit (S4). The sixth thermocouple (S4E6) of the fourth thermocouple series circuit (S4) is connected to the seventh by the sixth silicidation (S4S6) of the fourth thermocouple series circuit (S4) Thermocouple (S4E7) of the fourth thermocouple series circuit (S4) electrically connected. The seventh thermocouple (S4E7) of the fourth thermocouple series circuit (S4) is electrically connected to the eighth thermocouple (S4E8) of the fourth thermocouple series circuit (S4) through the seventh silicidation (S4S7) of the fourth thermocouple series circuit (S4).

The first thermocouple (S1E1) of the first thermocouple series circuit (S1) is electrically connected to a first connection pad (S1P1) of the first thermocouple series circuit (S1) via a fifteenth silicidation (SI15). The eighth thermocouple (S4E8) of the fourth thermocouple series circuit (S4) is electrically connected to a first connection pad (S4P1) of the fourth thermocouple series circuit (S4) via a nineteenth silicidation (SI19).

The eighth thermocouple (S1E8) of the first thermocouple series circuit (S1) is electrically connected to the first thermocouple (S2E1) of the second thermocouple series circuit (S2) via a sixteenth silicidation (SI16). The eighth thermocouple (S2E8) of the second thermocouple series circuit (S2) is electrically connected to the first thermocouple (S3E1) of the third thermocouple series circuit (S3) via a seventeenth silicidation (SI17). The eighth thermocouple (S3E8) of the third thermocouple series circuit (S3) is electrically connected to the first thermocouple (S4E1) of the fourth thermocouple series circuit (S4) via an eighteenth silicidation (SI18).

The first thermocouple (S1E1) of the first thermocouple series circuit (S1) and the third thermocouple (S1E3) of the first thermocouple series circuit (S1) and the fifth thermocouple (S1E5) of the first thermocouple series circuit (S1) and the seventh thermocouple (S1E7 ) the first thermocouple series circuit (S1) and the first thermocouple (S2E1) of the second thermocouple series circuit (S2) and the third thermocouple (S2E3) of the second thermocouple series circuit (S2) and the fifth thermocouple (S2E5) of the second thermocouple Series circuit (S2) and the seventh thermocouple (S2E7) of the second thermocouple series circuit (S2) and the first thermocouple (S3E1) of the third thermocouple series circuit (S3) and the third thermocouple (S3E3) of the third thermocouple series circuit (S3) and the fifth thermocouple (S3E5) of the third thermocouple series circuit (S3) and the seventh thermocouple (S3E7) of the third thermocouple series circuit (S3) and the first thermocouple (S4E1) of the fourth therm mopair series connection (S4) and the second thermocouple (S4E2) of the fourth thermocouple series connection (S4) and the third thermocouple (S4E3) of the fourth thermocouple series connection (S4) and the fourth thermocouple (S4E4) of the fourth thermocouple series connection (S4 ) are made of heavily doped polysilicon of a first doping type. The first type of doping is in 10 represented by a dotted pattern. The first type of doping can be p- or n-doping.

The second thermocouple (S1E2) of the first thermocouple series circuit (S1) and the fourth thermocouple (S1E4) of the first thermocouple series circuit (S1) and the sixth thermocouple (S1E6) of the first thermocouple series circuit (S1) and the eighth thermocouple (S1E8 ) the first thermocouple series circuit (S1) and the second thermocouple (S2E2) of the second thermocouple series circuit (S2) and the fourth thermocouple (S2E4) of the second thermocouple series circuit (S2) and the sixth thermocouple (S2E6) of the second thermocouple Series circuit (S2) and the eighth thermocouple (S2E8) of the second thermocouple series circuit (S2) and the second thermocouple (S3E2) of the third thermocouple series circuit (S3) and the fourth thermocouple (S3E4) of the third thermocouple series circuit (S3) and the sixth thermocouple (S3E6) of the third thermocouple series circuit (S3) and the eighth thermocouple (S3E8) of the third thermocouple series circuit (S3) and the second thermocouple (S4E2) of the fourth Thermocouple series circuit (S4) and the fourth thermocouple (S4E4) of the fourth thermocouple series circuit (S4) and the sixth thermocouple (S4E6) of the fourth thermocouple series circuit (S4) and the eighth thermocouple (S4E8) of the fourth thermocouple series circuit (S4 ) are made of heavily doped polysilicon of a second doping type. The second type of doping is in 10 represented by non-patterned stripes. The second doping type is n-doping if the first doping type is p-doping. The second doping type is p-doping when the first doping type is n-doping.

The eighth thermocouple (S1E8) of the first thermocouple series circuit (S1) is adjacent to the first thermocouple (S1E1) of the first thermocouple series circuit (S1).

The eighth thermocouple (S2E8) of the second thermocouple series circuit (S2) is adjacent to the first thermocouple (S2E1) of the second thermocouple series circuit (S2).

The eighth thermocouple (S3E8) of the third thermocouple series connection (S3) is adjacent to the first thermocouple (S3E1) of the third thermocouple series connection (S3).

The first thermocouple (S4E1) of the fourth thermocouple series circuit (S4) adjoins the first thermocouple (S4E1) of the fourth thermocouple series circuit (S4).

The first thermocouple (S1E1) of the first thermocouple series circuit (S1) and the second thermocouple (S1E2) of the first thermocouple series circuit (S1) and the third thermocouple (S1E3) of the first thermocouple series circuit (S1) and the fourth thermocouple (S1E4 ) the first thermocouple series circuit (S1) and the fifth thermocouple (S1E5) of the first thermocouple series circuit (S1) and the sixth thermocouple (S1E6) of the first thermocouple series circuit (S1) and the seventh thermocouple (S1E7) of the first thermocouple Series connection (S1) and the eighth thermocouple (S1E8) of the first thermocouple series connection (S1) form a closed border of a surface.

The first thermocouple (S2E1) of the second thermocouple series circuit (S2) and the second thermocouple (S2E2) of the second thermocouple series circuit (S2) and the third thermocouple (S2E3) of the second thermocouple series circuit (S2) and the fourth thermocouple (S2E4 ) the second thermocouple series circuit (S2) and the fifth thermocouple (S2E5) of the second thermocouple series circuit (S2) and the sixth thermocouple (S2E6) of the second thermocouple series circuit (S2) and the seventh thermocouple (S2E7) of the second thermocouple Series connection (S2) and the eighth thermocouple (S2E8) of the second thermocouple series connection (S2) form a closed border around the area in which the first thermocouple series connection (S1) is located.

The first thermocouple (S3E1) of the third thermocouple series circuit (S3) and the second thermocouple (S3E2) of the third thermocouple series circuit (S3) and the third thermocouple (S3E3) of the third thermocouple series circuit (S3) and the fourth thermocouple (S3E4 ) the third thermocouple series circuit (S3) and the fifth thermocouple (S3E5) of the third thermocouple series circuit (S3) and the sixth thermocouple (S3E6) of the third thermocouple series circuit (S3) and the seventh thermocouple (S3E7) of the third thermocouple Series connection (S3) and the eighth thermocouple (S3E8) of the third thermocouple series connection (S3) form a closed border around the area in which the second thermocouple series connection (S2) is located.

The first thermocouple (S4E1) of the fourth thermocouple series circuit (S4) and the second thermocouple (S4E2) of the fourth thermocouple series circuit (S4) and the third thermocouple (S4E3) of the fourth thermocouple series circuit (S4) and the fourth thermocouple (S4E4 ) the fourth thermocouple series circuit (S4) and the fifth thermocouple (S4E5) of the fourth thermocouple series circuit (S4) and the sixth thermocouple (S4E6) of the fourth thermocouple series circuit (S4) and the seventh thermocouple (S4E7) of the fourth thermocouple Series connection (S4) and the eighth thermocouple (S4E8) of the fourth thermocouple series connection (S4) form a closed border around the area in which the third thermocouple series connection (S3) is located.

In the improved layout, areas of the same doping type lie next to one another.

The first thermocouple (S1E1) of the first thermocouple series circuit (S1) and the first thermocouple (S2E1) of the second thermocouple series circuit (S2) and the first thermocouple (S3E1) of the third thermocouple series circuit (S3) and the first thermocouple (S4E1 ) of the fourth thermocouple series circuit (S4) are next to each other.

The second thermocouple (S1E2) of the first thermocouple series circuit (S1) and the second thermocouple (S2E2) of the second thermocouple series circuit (S2) and the second thermocouple (S3E2) of the third thermocouple series circuit (S3) and the second thermocouple (S4E2 ) of the fourth thermocouple series circuit (S4) are next to each other.

The third thermocouple (S1E3) of the first thermocouple series circuit (S1) and the third thermocouple (S2E3) of the second thermocouple series circuit (S2) and the third thermocouple (S3E3) of the third thermocouple series circuit (S3) and the third thermocouple (S4E3 ) of the fourth thermocouple series circuit (S4) are next to each other.

The fourth thermocouple (S1E4) of the first thermocouple series circuit (S1) and the fourth thermocouple (S2E4) of the second thermocouple series circuit (S2) and the fourth thermocouple (S3E4) of the third thermocouple series circuit (S3) and the fourth thermocouple (S4E4 ) of the fourth thermocouple series circuit (S4) are next to each other.

The fifth thermocouple (S1E5) of the first thermocouple series circuit (S1) and the fifth thermocouple (S2E5) of the second thermocouple series circuit (S2) and the fifth thermocouple (S3E5) of the third thermocouple series circuit (S3) and the fifth thermocouple (S4E5 ) of the fourth thermocouple series circuit (S4) are next to each other.

The sixth thermocouple (S1E6) of the first thermocouple series circuit (S1) and the The sixth thermocouple (S2E6) of the second thermocouple series circuit (S2) and the sixth thermocouple (S3E6) of the third thermocouple series circuit (S3) and the sixth thermocouple (S4E6) of the fourth thermocouple series circuit (S4) are adjacent.

The seventh thermocouple (S1E7) of the first thermocouple series circuit (S1) and the seventh thermocouple (S2E7) of the second thermocouple series circuit (S2) and the seventh thermocouple (S3E7) of the third thermocouple series circuit (S3) and the seventh thermocouple (S4E7 ) of the fourth thermocouple series circuit (S4) are next to each other.

The eighth thermocouple (S1E8) of the first thermocouple series circuit (S1) and the eighth thermocouple (S2E8) of the second thermocouple series circuit (S2) and the eighth thermocouple (S3E8) of the third thermocouple series circuit (S3) and the eighth thermocouple (S4E8 ) of the fourth thermocouple series circuit (S4) are next to each other.

In the manufacturing process, larger distances must be maintained for adjacent thermocouples of different doping types than for adjacent thermocouples of the same doping type. The improved layout allows as many thermocouples as possible of the same doping type to be arranged next to one another. In addition to simplifying the manufacturing process, this also increases the packing density of the thermocouples.

At least one proposed thermopile free of metal layers can be used as a thermoelectric generator, regardless of its layout. For this purpose, a voltage must be taken from the connection terminals of the thermopile, and heating or cooling must be applied in the spatial vicinity of the transitions from p- to n-doped semiconductor materials or from n- to p-doped semiconductor materials. This is based on 8th briefly explained in more detail. The vertical dotted lines in 8 p -doped polysilicon and the horizontal dotted lines in 8 n - symbolize doped polysilicon.

The first thermocouple (TC11) of the first thermocouple (TC1) and the first thermocouple (TC12) of the second thermocouple (TC2) and the first thermocouple (TC31) of the third thermocouple (TC3) and the first thermocouple (TC41) of the fourth thermocouple (TC4) ) and the first thermocouple (TC51) of the fifth thermocouple (TC5) are thus made of p-doped polysilicon. The second thermocouple (TC1) of the first thermocouple (TC1) and the second thermocouple (TC22) of the second thermocouple (TC2) and the second thermocouple (TC32) of the third thermocouple (TC3) and the second thermocouple (TC42) of the fourth thermocouple (TC4) ) and the second thermocouple (TC52) of the fifth thermocouple (TC5) are thus made of n-doped polysilicon.

If the spatial surroundings of the fourth silicidation (SI4) and the fifth silicidation (SI5) and the sixth silicidation (SI6) and the seventh silicidation (SI7) and the eighth silicidation (SI8) can be heated between the first connection pad (P1) and a voltage can be taken from the second connection pad (P2).

The use of at least one proposed thermopile free of metal layers, regardless of its layout, as a cooling element is possible. For this purpose, a voltage must be applied to the connection terminals of the thermopile. In the spatial proximity of the transitions from p- to n-doped semiconductor materials, there is a cooling. This is based on 8th briefly explained in more detail. The vertical dotted lines in 8 p -doped polysilicon and the horizontal dotted lines in 8 n - symbolize doped polysilicon.

The first thermocouple (TC11) of the first thermocouple (TC1) and the first thermocouple (TC12) of the second thermocouple (TC2) and the first thermocouple (TC31) of the third thermocouple (TC3) and the first thermocouple (TC41) of the fourth thermocouple (TC4) ) and the first thermocouple (TC51) of the fifth thermocouple (TC5) are thus made of p-doped polysilicon. The second thermocouple (TC1) of the first thermocouple (TC1) and the second thermocouple (TC22) of the second thermocouple (TC2) and the second thermocouple (TC32) of the third thermocouple (TC3) and the second thermocouple (TC42) of the fourth thermocouple (TC4) ) and the second thermocouple (TC52) of the fifth thermocouple (TC5) are thus made of n-doped polysilicon.

When a voltage is applied between the first connection pad (P1) and the second connection pad (P2), the spatial surroundings of the fourth silicidation (SI4) and the fifth silicidation (SI5) and the sixth silicidation (SI6) and the seventh occur Silicidation (SI7) and the eighth silicidation (SI8).

At least one proposed thermopile without metal layers can, regardless of its layout, with a structure as in 11 shown as an example, tested. 11 shows an example of a possible structure for a proposed test structure for up to two proposed thermopiles by comparing the temperature determined by the thermopiles to be tested with the temperature determined by a further different thermosensitive sensor structure. The individual elements of the test structure are indicated by ellipses with a dashed border 11 highlighted for easier understanding.

A first resistor (H1W1) of a first heating element (H1) is located above a sixth membrane (MEM6). The sixth membrane (MEM6) is made of a dielectric material. The sixth membrane (MEM6) is thermally isolated from the substrate underneath. The first resistor (H1W1) of the first heating element (H1) is made of doped or undoped polysilicon and has an electrical resistance of the order of 250 Ω / cm ² .

The first resistor (H1W1) of the first heating element (H1) is electrically connected to a first connection pad (H1P1) of the first heating element (H1) through a first silicidation (H1S1) of the first heating element (H1). The first resistor (H1W1) of the first heating element (H1) is electrically connected to a second connection pad (H1P2) of the first heating element (H1) by a second silicidation (H1S2) of the first heating element (H1). The first connection pad (H1P1) of the first heating element (H1) and the second connection pad (H1P2) of the first heating element (H1) are not located above the thermally insulated sixth membrane (MEM6). The first connection pad (H1P1) of the first heating element (H1) and the second connection pad (H1P2) of the first heating element (H1) are electrically connected to a voltage source or to further electronic components.

A first thermopile (TP1) is located above the sixth membrane (MEM6). The first thermopile (TP1) is structured like the one in 9 and in 8th shown thermopile. The structure of the first thermopile (TP1) is therefore not explained in more detail here. The first thermopile (TP1) is electrically connected to a first connection pad (TP1P1) of the first thermopile (TP1). The compound is made of silicide. The first thermopile (TP1) is electrically connected to a second connection pad (TP1P2) of the first thermopile (TP1). The compound is made of silicide. The first connection pad (TP1P1) of the first thermopile (TP1) and the second connection pad (TP1P2) of the first thermopile (TP1) are not above the thermally insulated sixth membrane (MEM6). The first connection pad (TP1P1) of the first thermopile (TP1) and the second connection pad (TP1P2) of the first thermopile (TP1) can be electrically connected to a voltmeter or to other electronic components. A first voltage (UTP1) can be applied between the first connection pad (TP1P1) of the first thermopile (TP1) and the second connection pad (TP1P2) of the first thermopile (TP1).

In 11 the first thermopile (TP1) is shown by way of example on the right-hand side of the first resistor (H1W1) of the first heating element (H1) and rotated by 90 ° relative to it.

A second thermopile (TP2) is located above the sixth membrane (MEM6). The second thermopile (TP2) is structured like the one in 9 and in 8th shown thermopile. The structure of the second thermopile (TP2) is therefore not explained in more detail here. The second thermopile (TP2) is electrically connected to a first connection pad (TP2P1) of the second thermopile (TP2). The compound is made of silicide. The second thermopile (TP2) is electrically connected to a second connection pad (TP2P2) of the second thermopile (TP2). The compound is made of silicide. The first connection pad (TP2P1) of the second thermopile (TP2) and the second connection pad (TP2P2) of the second thermopile (TP2) are not above the thermally insulated sixth membrane (MEM6). The first connection pad (TP2P1) of the second thermopile (TP2) and the second connection pad (TP2P2) of the second thermopile (TP2) can be electrically connected to a voltmeter or to other electronic components. A second voltage (UTP2) can be applied between the first connection pad (TP2P1) of the second thermopile (TP2) and the second connection pad (TP2P2) of the second thermopile (TP2).

In 11 the second thermopile (TP2) is drawn as an example on the left side of the first resistor (H1W1) of the first heating element (H1) and the first thermopile (TP1) opposite.

The test structure according to the proposal comprises a further different thermo-sensitive sensor structure for determining the temperature set by the first heating element (H1). A series connection of four pn or pin diodes is used for this purpose.

Above the sixth membrane (MEM6) is a first control element (K1). The first control element (K1) comprises a series circuit of a first diode (K1D1) of the first control element (K1) and a second diode (K1D2) of the first control element (K1) and a third diode (K1D3) of the first control element (K1) and one fourth diode (K1D4) of the first control element (K1).

The first diode (K1D1) of the first control element (K1) and the second diode (K1D2) of the first control element (K1) and the third diode (K1D3) of the first control element (K1) and the fourth diode (K1D4) of the first control element (K1 ) are pn diodes or pin diodes made of polysilicon.

The first diode (K1D1) of the first control element (K1) is electrically connected to a first connection pad (K1P1) of the first control element (K1) through a first silicidation (K1S1) of the first control element (K1). The fourth diode (K1D4) of the first control element (K1) is electrically connected to a second connection pad (K1P2) of the first control element (K1) through a second silicidation (K1S2) of the first control element (K1).

The first connection pad (K1P1) of the first control element (K1) and the second connection pad (K1P2) of the first control element (K1) can be electrically connected to a voltage measuring device or to further electronic components. A third voltage (UK) can be applied between the first connection pad (K1P1) of the first control element (K1) and the second connection pad (K1P2) of the first control element (K1).

The first control element (K1) is in 11 the first resistor (H1W1) of the first heating element (H1) shown opposite. However, a different positioning of the first control element (K1) and the first thermopile (TP1) and the first resistor (H1W1) of the first heating element (H1) and the second thermopile (TP2) relative to one another would also be possible.

By setting the adjustable voltage (UH) between the first connection pad (H1P1) of the first heating element (H1) and the second connection pad (H1P2) of the first heating element (H1), a current is generated through the first resistor (H1W1) of the first heating element (H1) set. The thermal power loss in the first resistor (H1W1) of the first heating element (H1) leads to a temperature that can be set using the adjustable voltage (UH) in the area of the first resistor (H1W1) of the first heating element (H1). Because of this heating, the first voltage (UTP1) and the second voltage (UTP2) and the third voltage (UK) are different from zero.

The functionality of the first thermopile (TP1) and the functionality of the second thermopile (TP2) can now be checked by comparing the first voltage (UTP1) and the second voltage (UTP2) with the third voltage (UK).

At least one proposed thermopile free of metal layers can be used in the interior of motor vehicles regardless of its layout. The thermopile can also be capable of self-testing. For this purpose, as described above, a heating element without metal layers should be implemented on the same substrate. One possible use of the proposed thermopile free of metal layers in the interior of motor vehicles is, for example, in an infrared sensor. This can be used to detect people. The surface temperature of people in the vehicle interior can be determined with the infrared sensor. It is therefore possible to detect increased temperature or fever in the driver and to issue a corresponding warning. Furthermore, the surface temperature can be used to differentiate between dead and living organisms. If children or pets are left behind in the vehicle when it is locked from the outside, impending overheating can be detected by determining the body surface temperature and appropriate measures can be taken to save the child or pet in the vehicle. For example, the vehicle could unlock and alert the surroundings via an alarm tone. The driver could be informed of the impending overheating by a message sent automatically to his mobile device.

Furthermore, at least two proposed metal-layer-free thermopiles can be arranged to form a one- or two-dimensional thermopile array, regardless of their layout. The thermopiles of the proposed thermopile array are electrically connected to one another by siliciding. Such a proposed thermopile array can be used as a sensor in an infrared camera. Such an infrared camera can be used, for example, in motor vehicles to improve the image information of an external camera of the vehicle in the dark.

At least one proposed thermopile can be used in an infrared sensor which is used as a receiver in a Halios device. A Halios system comprising at least one Halios device is known in the prior art (SdT). Let it be at this point, for example DE 10 2015 015 389 A1 , DE 10 2017 100 308 B3 , EP 1913420 B1 referenced. A Halios system can be used for gesture recognition. A Halios device corresponding to the state of the art (SdT) is described below with reference to FIG 12th described. The description is to be sent to the in DE 10 2015 015 389 A1 given description ajar.

12th Figure 10 shows a prior art (SdT) Halios device. A proposed thermopile can be used here as a receiver. A Halios system consists of at least one in 12th Halios device shown.

An infrared LED is used as a transmitter (H). The transmitter (H) emits an optical transmission signal (OS1). A transmission signal (S5) is from a Generator (G) generated. The transmission signal (S5) modulates the amplitude of the transmitter (H) and thus the amplitude of the optical transmission signal (OS1). The optical transmission signal (OS1) is reflected and transmitted on an object (O) to be detected.

A reflected optical transmission signal (OS3) is received by a receiver (D). The receiver (D) can comprise at least one proposed thermopile. The receiver (D) converts the reflected optical transmission signal (OS3) into a reception signal (S0). The received signal (S0) is amplified by a preamplifier (V) to form an amplified received signal (S01). The amplified reception signal (S01) and the transmission signal (S5) are multiplied by a first multiplier (MP1) to form a multiplied reception signal (S9). The multiplied received signal (S9) is filtered in a filter (F) to form a filter output signal (S10). The filter (F) can be a low-pass or band-pass filter. The filter output signal (S10) is amplified by a post-amplifier (VN) to form an amplified filter output signal (S14). The amplified output signal (S14) can be tapped on the device shown. Within the device, the amplified filter output signal (S14) is multiplied by the inverted transmission signal (S5) at a third multiplier (MP3) to form a compensation feed signal (S6). The transmission signal (S5) is inverted by multiplying by “-1” at a second multiplier (MP2).

The compensation feed pre-signal (S6) is summed at an adder (A) with an offset (B) to form a compensation feed signal (S7). The addition with the offset (B) guarantees a positive range of values for the compensation signal (S7). The compensation feed signal (S7) controls a compensation transmitter (K). The compensation transmitter (K) is an infrared LED. The compensation transmitter (K) emits an optical compensation signal (OS2). The optical compensation signal (OS2) is also received by the receiver (D) and superimposed with the reflected optical transmission signal (OS3).

Structure of a metal-layer-free thermopile from metal-layer-free thermocouples

A proposed thermocouple comprises a first substrate (SUB1), a first membrane (MEM1), a first polysilicon layer (PS1), a first insulation layer (I1), a first cavity (C1), a first trench (G1), a second Trench (G2), a first thermocouple (TE1), a second thermocouple (TE2), a first silicidation (SI1), a second silicidation (SI2) and a third silicidation (SI3).

The first substrate (SUB1) is preferably made of a doped or undoped semiconductor material. It is preferably a piece of a silicon wafer. It can also be made from polysilicon.

The first cavity (C1) is introduced into the first substrate (SUB1). The first cavity (C1) is made of a thermally poorly conductive material, preferably air, or is vacuum-sealed.

The first membrane (MEM1) lies on the first substrate (SUB1) and is located above the first cavity (C1). The first membrane (MEM1) is made of a dielectric material, for example an oxide or a nitride. The first membrane (MEM1) can also contain absorbers and / or absorber layers for infrared radiation. The absorption capacity can be achieved through the material itself or a micro- or nano-structuring.

The first polysilicon layer (PS1) lies on the first membrane (MEM1) and the first insulation layer (I1) lies on the first polysilicon layer (PS1). The first trench (G1) extends from the surface of the first insulation layer (I1) into the first substrate (SUB1). The second trench (G2) extends from the surface of the first insulation layer (I1) into the first substrate (SUB1). The first cavity (C1) adjoins the first trench (G1) and the second trench (G2).

The first polysilicon layer (PS1) comprises the first thermocouple (TE1), the second thermocouple (TE2), the first silicidation (SI1), the second silicidation (SI2) and the third silicidation (SI3).

The first thermocouple (TE1), the second thermocouple (TE2) and the second silicidation (SI2) are above the first cavity (C1). The second silicidation (SI2) is located between the first thermocouple (TE1) and the second thermocouple (TE2). The second silicidation (SI2) connects the first thermocouple (TE1) and the second thermocouple (TE2) to one another in an electrically conductive manner.

The first silicidation (SI1) and the second silicidation (SI2) and the third silicidation (SI3) are made of, for example, titanium-silicided polysilicon. The first silicidation (SI1) and the third silicidation (SI3) are connection points for further thermocouples or electronic components made of polysilicon.

The first thermocouple (TE1) is made of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) is made of heavily doped polysilicon from a second Doping type. The first type of doping can be p-doping or n-doping. The second doping type is p-doping when the first doping type is n-doping. The second doping type is n-doping if the first doping type is p-doping.

A proposed thermopile comprises at least one thermocouple as described above.

In the case of a proposed thermopile that comprises at least two thermocouples, at least two thermocouples are electrically connected to one another by silicidation.

The connection points of a proposed thermopile for electrical connection with other electronic components or further thermopiles are made of silicide.

Structure of a silicided thermopile

According to the proposal, a silicided thermopile comprises at least one thermocouple free of metal layers. The thermocouple without metal layers comprises a first thermocouple (TE1) and a second thermocouple (TE2).

The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material except for possible doping. The first thermocouple (TE1) and the second thermocouple (TE2) are electrically connected to one another by an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2) each with additional types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms and / or other suitable metal atoms.

The material of the first thermocouple (TE1) and the second thermocouple (TE2) is preferably polycrystalline silicon. Consequently, the electrically conductive connection from the electrically conductive connection of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with other types of atoms is a silicide.

The electrically conductive connection from the electrically conductive connection of the material of the first thermocouple (TE1) and of the second thermocouple (TE2) with other types of atoms titanium silicide and / or tungsten silicide and / or cobalt silicide and / or nickel silicide and / or another electrically conductive metal silicide is preferred . It is conceivable by implanting different metal atoms, such as titanium and / or tungsten and / or cobalt and / or nickel atoms and / or other suitable metal atoms, at different depths into the polycrystalline silicon, electrical connections made in parallel from different silicides same polycrystalline silicon.

The first thermocouple (TE1) and the second thermocouple (TE2) are preferably in the same layer plane of the CMOS stack. The electrically conductive connecting silicide is in the same layer in the CMOS stack as the first thermocouple (TE1) and the second thermocouple (TE2).

The first thermocouple (TE1) is made of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) is made of heavily doped polysilicon of a second doping type.

The first type of doping can be p-doping or n-doping.

The second doping type is p-doping when the first doping type is n-doping. The second doping type is n-doping if the first doping type is p-doping.

Doping the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be dispensed with if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.

The connection points of the proposed silicided thermopile for electrical connection with other electronic components or further thermopiles are made of silicide.

Structure of a metal layer-free thermocouple

A proposed thermocouple is free of metal layers.

A thermopile can be implemented with at least one proposed thermocouple free of metal layers.

A proposed thermocouple free of metal layers comprises a first thermocouple (TE1) and a second thermocouple (TE2). The The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material apart from the respective doping. The first thermocouple (TE1) and the second thermocouple (TE2) are electrically connected to one another via an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2) each with additional types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.

The material of the first thermocouple (TE1) and the second thermocouple (TE2) is preferably polycrystalline silicon. The conductive connection from the electrically conductive connection of the material of the first thermocouple (TE1) and of the second thermocouple (TE2) with other types of atoms is preferably a silicide.

Preferred here is the conductive connection from the electrically conductive connection of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with other types of atoms to titanium silicide and / or tungsten silicide and / or cobalt silicide and / or nickel silicide and / or to another electrically conductive one Metal silicide.

The first thermocouple (TE1) is made of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) is made of heavily doped polysilicon of a second doping type.
The first type of doping can be p-doping or n-doping.
The second doping type is p-doping when the first doping type is n-doping. The second doping type is n-doping if the first doping type is p-doping.

Doping the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be dispensed with if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.

The connection points of the proposed silicided thermopile for electrical connection with other electronic components or further thermopiles are made of silicide.

Structure of a non-metallic thermocouple

A proposed thermocouple is non-metallic within the meaning of this disclosure.

A thermopile can be realized with at least one proposed non-metallic thermocouple. It is preferred to use more than one thermocouple.

According to the proposal, a thermocouple free of metal layers and therefore non-metallic in the sense of this disclosure comprises a first thermocouple (TE1) and a second thermocouple (TE2). The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material apart from the respective doping. The first thermocouple (TE1) and the second thermocouple (TE2) are electrically connected to one another via an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2) each with additional types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.

The material of the first thermocouple (TE1) and the second thermocouple (TE2) is preferably polycrystalline silicon. The conductive connection from the electrically conductive connection of the material of the first thermocouple (TE1) and of the second thermocouple (TE2) with other types of atoms is preferably a silicide.

The conductive connection from the electrically conductive connection of the material of the first thermocouple (TE1) and of the second thermocouple (TE2) with other types of atoms to form titanium silicide and / or tungsten silicide and / or cobalt silicide and / or nickel silicide and / or to another electrical is preferred conductive metal silicide.

The first thermocouple (TE1) is made of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) is made of heavily doped polysilicon of a second doping type.
The first type of doping can be p-doping or n-doping.
The second doping type is p-doping when the first doping type is n-doping. The second doping type is n-doping if the first doping type is p-doping.

Doping the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be dispensed with if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.

The connection points of the proposed silicided thermopile to the electrical Connection to other electronic components or further thermopiles are preferably also made of silicide.

Improved layout of a metal layer-free thermopile

Another proposed silicided thermopile comprises at least one metal-layer-free thermocouple.

If semiconductor materials other than polycrystalline silicon - also called polysilicon - are used, their compound with the corresponding metal is used here instead of the silicide. The compounds of such other, polycrystalline or amorphous semiconductor materials with metals to form substances which are functionally similar to silicides are also covered by the claims. Thus, when silicide is spoken of in this disclosure, the compounds of such semiconductor materials with metals are encompassed by the claims if they lead to materials that are functionally similar to silicides and the claims or the description of silicide or silicidation are mentioned . When we talk about silicides, we mean intermetallic compounds with metallic or metal-like conductivity at room temperature.

The thermocouple without metal layers comprises a first thermocouple (TE1) and a second thermocouple (TE2). The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material except for possible doping. The first thermocouple (TE1) and the second thermocouple (TE2) are electrically connected to one another by an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2) each with additional types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.

The material of the first thermocouple (TE1) and the second thermocouple (TE2) is preferably polycrystalline silicon. Consequently, the electrically conductive connection from the electrically conductive connection of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with other types of atoms is a silicide.

The electrically conductive connection from the electrically conductive connection of the material of the first thermocouple (TE1) and of the second thermocouple (TE2) with other types of atoms is preferably titanium silicide and / or tungsten silicide and / or cobalt silicide and / or nickel silicide and / or an electrically conductive silicide other metal. However, other metal atoms are also conceivable and also covered by the claims with regard to silicidation, provided that they result in structures that are similar in function.

The first thermocouple (TE1) and the second thermocouple (TE2) are preferably in the same layer plane of the CMOS stack. The electrically conductive connecting silicide is in the same layer in the CMOS stack as the first thermocouple (TE1) and the second thermocouple (TE2).

The first thermocouple (TE1) is made of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) is made of heavily doped polysilicon of a second doping type.

The first type of doping can be p-doping or n-doping.
The second doping type is p-doping when the first doping type is n-doping. The second doping type is n-doping if the first doping type is p-doping.

Doping the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be dispensed with if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.

The connection points of the proposed silicided thermopile for electrical connection with other electronic components or further thermopiles are made of silicide.

Thermocouples with the same doping are arranged directly next to one another.

Use of a metal layer-free thermopile as a thermoelectric generator

The invention also relates to the use of a metal layer-free thermopile as a thermoelectric generator. The thermopile comprises at least one thermocouple free of metal layers. The thermocouple comprises a first thermocouple (TE1) and a second thermocouple (TE2).

The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material except for the doping.

The first thermocouple (TE1) and the second thermocouple (TE2) are electrically connected to one another via an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2) each offset with further types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.

The material of the first thermocouple (TE1) and the second thermocouple (TE2) is preferably polycrystalline silicon.

Other polycrystalline or amorphous semiconductor materials are conceivable. When polycrystalline silicon is mentioned in this disclosure, such semiconductor materials are also covered by the claims if they lead to functionally similar functional elements and polycrystalline silicon is mentioned in the claims or in the description.

The conductive connection from the electrically conductive connection of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with other types of atoms is a silicide.

If other semiconductor materials are used, their compound with the corresponding metal is used here instead of the silicide. The compounds of such other polycrystalline or amorphous semiconductor materials with metals to form substances which are functionally similar to silicides are also covered by the claims. When one speaks of silicide in this disclosure, the compounds of such semiconductor materials with metals are also encompassed by the claims if they lead to materials which are functionally similar to silicides and the claims or the description speak of silicide or silicidation.

Preferably, the conductive connection from the electrically conductive connection of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with further atom types is titanium silicide and / or tungsten silicide and / or cobalt silicide and / or nickel silicide and / or an electrically conductive silicide of another Metal.

The possible doping of the first thermocouple (TE1) is of a first doping type.
The possible doping of the second thermocouple (TE2) is of a second doping type. The first type of doping is p-doping or n-doping.
The second doping type is n-doping when the first doping type is p-doping. The second type of doping is p-type when the first type of doping is n-type.

Doping the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be dispensed with if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.

The thermopile is partially located over a cavity in the substrate. The cavity is filled with a thermally poorly conductive material, preferably with air or vacuum or silicon-germanium.

The thermopile can be used as a thermoelectric generator.

Use of a metal layer-free thermopile as a cooling element

The invention also relates to the use of a metal layer-free thermopile as a cooling element. The thermopile comprises at least one thermocouple free of metal layers.

The thermocouple comprises a first thermocouple (TE1) and a second thermocouple (TE2).

The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material except for the doping.

The first thermocouple (TE1) and the second thermocouple (TE2) are electrically connected to one another via an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2) each with additional types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.

The material of the first thermocouple (TE1) and the second thermocouple (TE2) is polycrystalline silicon.

The conductive connection from the electrically conductive connection of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with other types of atoms is a silicide.

Preferably, the conductive connection from the electrically conductive connection of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with other types of atoms is titanium silicide or tungsten silicide or cobalt silicide or nickel silicide and / or an electrically conductive silicide of another metal.

The possible doping of the first thermocouple (TE1) is of a first doping type. The possible doping of the second thermocouple (TE2) is of a second doping type. The first type of doping is p-doping or n-doping. The second doping type is n-doping when the first doping type is p-doping. The second type of doping is p-type when the first type of doping is n-type.

Doping the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be dispensed with if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.

The thermopile is partially located over a cavity in the substrate. The cavity is filled with a thermally poorly conductive material, preferably with air or vacuum or silicon-germanium.

A voltage can be applied to the connection terminals of the thermopile in order to generate a current flow through the thermopile. The thermopile can be used as a cooling element.

Device and method for testing at least one silicided thermopile in detail

The invention also relates to a device and a method for testing at least one silicided thermopile. The device comprises a first thermopile (TP1) and a second thermopile (TP2) and a first heating element (H1) and a first control element (K1).

The first thermopile (TP1) comprises at least one thermocouple. The first thermopile (TP1) does not contain any metal layers. Electrical connections are implemented by siliciding, for example, using titanium and / or tungsten and / or cobalt and / or nickel and / or another metal. The first thermopile (TP1) is electrically connected to a first connection pad (TP1P1) of the first thermopile (TP1) by siliciding. The first thermopile (TP1) is electrically connected to a second connection pad (TP1P2) of the first thermopile (TP1) by siliciding.

The second thermopile (TP2) comprises at least one thermocouple. The second thermopile (TP2) does not contain any metal layers. Electrical connections are implemented by siliciding, for example, using titanium and / or tungsten and / or cobalt and / or nickel and / or another metal. The second thermopile (TP2) is electrically connected to a first connection pad (TP2P1) of the second thermopile (TP2) by siliciding. The second thermopile (TP2) is electrically connected to a second connection pad (TP2P2) of the second thermopile (TP2) by siliciding.

The first heating element (H1) comprises a first resistor (H1W1) of the first heating element (H1) made of polycrystalline silicon, also called polysilicon.

The first resistor (H1W1) of the first heating element (H1) is electrically connected to a first connection pad (H1P1) of the first heating element (H1) through a first silicidation (H1S1) of the first heating element (H1).

The first resistor (H1W1) of the first heating element (H1) is electrically connected to a second connection pad (H1P2) of the first heating element (H1) by a second silicidation (H1S2) of the first heating element (H1).

An adjustable voltage (UH) can be applied between the first connection pad (H1P1) of the first heating element (H1) and the second connection pad (H1P2) of the first heating element (H1).

The first control element (K1) preferably comprises a series circuit of a first diode (K1D1) of the first control element (K1) and a second diode (K1D2) of the first control element (K1) and a third diode (K1D3) of the first control element (K1) and a fourth diode (K1D4) of the first control element (K1).

The first diode (K1D1) of the first control element (K1) and the second diode (K1D2) of the first control element (K1) and the third diode (K1D3) of the first control element (K1) and the fourth diode (K1D4) of the first control element (K1 ) are preferably pn diodes or pin diodes made of polysilicon.

The first diode (K1D1) of the first control element (K1) is electrically connected to a first connection pad (K1P1) of the first control element (K1) through a first silicidation (K1S1) of the first control element (K1).

The fourth diode (K1D4) of the first control element (K1) is electrical due to a second silicidation (K1S2) of the first control element (K1) connected to a second connection pad (K1P2) of the first control element (K1).

The first thermopile (TP1) and the second thermopile (TP2) can be connected in series with one another to form a thermopile.

The first thermopile (TP1) and the second thermopile (TP2) are preferably arranged opposite one another.

The first heating element (H1) and the first control element (K1) are preferably arranged opposite one another.

The straight line on which the first thermopile (TP1) and the second thermopile (TP2) are arranged preferably intersects the straight line on which the first heating element (H1) and the first control element (K1) are arranged, orthogonally.

The method for testing at least one thermopile is based on the device described above.

An adjustable voltage (UH) is applied between the first connection pad (H1P1) of the first heating element (H1) and the second connection pad (H1P2) of the first heating element (H1).

The thermal power loss in the first resistor (H1W1) of the first heating element (H1) results in a temperature increase at the first resistor (H1W1) of the first heating element (H1).

The first heating element (H1) is thermally coupled to the first thermopile (TP1).

A first voltage (UTP1) is then measured between the first connection pad (TP1P1) of the first thermopile (TP1) and the second connection pad (TP1P2) of the first thermopile (TP1).

A second voltage (UTP2) is thus measured between the first connection pad (TP2P1) of the second thermopile (TP2) and the second connection pad (TP2P2) of the second thermopile (TP2).

A third voltage (UK) is measured between the first connection pad (K1P1) of the first control element (K1) and the second connection pad (K1P2) of the first control element (K1).

The first voltage (UTP1) and the second voltage (UTP2) and the third voltage (UK) are dependent on the temperature increase at the first resistor (H1W1) of the first heating element (H1).

The functionality of the first thermopile (TP1) and the second thermopile (TP2) is checked by comparing the first voltage (UTP1) and the second voltage (UTP2) with the third voltage (UK).

For example, if the difference between the magnitude of the first voltage (UP1) and the magnitude of the third voltage (UK) is less than a predetermined threshold value, the first thermopile (TP1) is assessed as being functional. If, for example, the difference between the amount of the first voltage (UP1) and the amount of the third voltage (UK) is greater than the predetermined threshold value, the first thermopile (TP1) is assessed as not being functional.

For example, if the difference between the magnitude of the second voltage (UP2) and the magnitude of the third voltage (UK) is less than the specified threshold value, the second thermopile (TP2) is assessed as being functional. If, for example, the difference between the magnitude of the second voltage (UP2) and the magnitude of the third voltage (UK) is greater than the predetermined threshold value, the second thermopile (TP2) is assessed as not functioning.

For example, if the difference between the amount of the first voltage (UP1) and the amount of the second voltage (UP2) is less than the specified threshold value, the first thermopile (TP1) and the second thermopile (TP2) are assessed as functional. For example, if the difference between the magnitude of the first voltage (UP1) and the magnitude of the second voltage (UP2) is greater than the specified threshold value, the first thermopile (TP1) and / or the second thermopile (TP2) are assessed as non-functional.

As a rule, the evaluations are handled in such a way that an evaluation as “non-functional” leads to an overall evaluation of the thermopile array as non-functional.

Device and method for testing at least one thermopile in general

The invention relates to a device and a method for testing at least one silicided thermopile. The device for testing at least one thermopile comprises a first thermopile (TP1) and a first heating element (H1) and a first control element (K1).

Both the first thermopile and the first heating element (H1) are preferably non-metallic and preferably made of a semiconductor material, for example polycrystalline silicon with optionally locally silicided functional elements.

The first thermopile (TP1) thus comprises at least one thermocouple free of metal layers. This means that this thermocouple is not metallic in the sense of this disclosure.

The first control element (K1) comprises at least one further deviating thermo-sensitive sensor structure free of metal layers. This means that the control element (K1) is not metallic in the sense of this disclosure.

The first heating element (H1) comprises a first resistor (H1W1) of the first heating element (H1) which is free of metal layers. This means that this first resistor (H1W1) is not metallic in the sense of this disclosure.

The first thermopile (TP1) and the first heating element (H1) and the first control element (K1) are preferably arranged as close to one another as possible in order to enable good thermal coupling.

The method for testing at least one silicided thermopile is based on the proposed device described above. The temperature increase resulting from thermal power loss in the first resistor (H1W1) of the first heating element (H1) is set by applying an adjustable voltage (UH) to the first resistor (H1W1) of the first heating element (H1).

A first voltage (UTP1) is measured on the first thermopile (TP1).

A third voltage (UK) is measured on the first control element (K1).

The first voltage (UTP1) and the third voltage (UK) are dependent on the temperature increase at the first resistor (H1W1) of the first heating element (H1).

The functionality of the first thermopile (TP1) is checked by comparing the first voltage (UTP1) with the third voltage (UK).

For example, if the difference between the magnitude of the first voltage (UP1) and the magnitude of the third voltage (UK) is less than a predetermined threshold value, the first thermopile (TP1) is assessed as being functional. If, for example, the difference between the amount of the first voltage (UP1) and the amount of the third voltage (UK) is greater than the predetermined threshold value, the first thermopile (TP1) is assessed as not being functional.

In the simplest case, the method for testing at least one thermopile is carried out with a device that comprises only one heating element and one thermopile. The temperature increase resulting from thermal power loss in the first resistor (H1W1) of the first heating element (H1) is then applied to the first resistor (H1W1) of the first heating element (H1) by applying the adjustable voltage (UH) between the first connection pad (H1P1) of the first heating element (H1) and the second connection pad (H1P2) of the first heating element (H1). A first voltage (UTP1) is then measured again between the first connection pad (TP1P1) of the first thermopile (TP1) and the second connection pad (TP1P2) of the first thermopile (TP1). The first voltage (UTP1) is then dependent on the temperature increase across the first resistor (H1W1) of the first heating element (H1). The functionality of the first thermopile (TP1) is then checked by comparing the first voltage (UTP1) with a specified, set or programmed setpoint.

Motor vehicle with at least one self-testable thermopile free of metal layers

The invention also relates to a device and a method for testing at least one thermopile free of metal layers in motor vehicles. The proposed device comprises a first thermopile (TP1) and a first heating element (H1) and a first control element (K1).

The first thermopile (TP1) and the first heating element (H1) and the first control element (K1) are preferably free of metal layers.

The first thermopile (TP1) comprises at least one thermocouple free of metal layers.

The first control element (K1) comprises at least one further different thermo-sensitive sensor structure.

The first heating element (H1) comprises a first resistor (H1W1) of the first heating element (H1).

The first thermopile (TP1) and the first heating element (H1) and the first control element (K1) are preferably arranged as close to one another as possible in order to couple them well thermally.

The method for testing at least one thermopile free of metal layers is based on the proposed device described above.

The temperature increase resulting from thermal power loss in the first resistor (H1W1) of the first heating element (H1) is caused by Apply an adjustable voltage (UH) to the first resistor (H1W1) of the first heating element (H1).

A first voltage (UTP1) can be measured at the connection terminals of the first thermopile (TP1).

A third voltage (UK) can be measured at the connection terminals of the first control element (K1).

The first voltage (UTP1) and the third voltage (UK) are dependent on the temperature increase at the first resistor (H1W1) of the first heating element (H1).

The functionality of the first thermopile (TP1) can be checked by comparing the first voltage (UTP1) with the third voltage (UK).

The proposed device and the proposed method can be used to implement self-testable thermopiles free of metal layers in infrared sensors in motor vehicles. The test can be carried out at the end of production of the vehicle, the add-on parts of the vehicle, but also when the vehicle is stationary or not in use or during operation, i.e. while driving.

Thermopile in infrared sensor for person detection in vehicle interiors

Another proposed thermopile comprises at least one first thermocouple, in particular one free from metal layers. The thermocouple comprises a first thermocouple (TE1) and a second thermocouple (TE2).

The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material except for possible doping.

The first thermocouple (TE1) and the second thermocouple (TE2) are electrically connected to one another by an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2) each with additional types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.

The material of the first thermocouple (TE1) and the second thermocouple (TE2) is preferably polysilicon. The electrically conductive connection from the electrically conductive connection of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with other types of atoms is a silicide, preferably titanium silicide and / or tungsten silicide or cobalt silicide or nickel silicide and / or an electrically conductive silicide of another Metal.

The silicide that connects the first thermocouple (TE1) and the second thermocouple (TE2) in an electrically conductive manner is in the same layer plane of the CMOS stack as the first thermocouple (TE1) and the second thermocouple (TE2).

The possible doping of the first thermocouple (TE1) is of a first doping type.

The possible doping of the second thermocouple (TE2) is of a second doping type.

The first type of doping can be p-doping or n-doping.

The second doping type is n-doping when the first doping type is p-doping.

The second type of doping is p-type when the first type of doping is n-type.

Doping the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be dispensed with if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.

The connection points of the thermopile for electrical connection with other electronic components are preferably made of silicide.

At least one proposed thermopile can be used as part of an infrared sensor system or infrared sensor.

It is proposed to use at least one such infrared sensor in the interiors of motor vehicles for recognizing people.

This at least one infrared sensor can then be used in the interior of motor vehicles for detecting the body temperature of the vehicle occupants, in particular for detecting fever.

This at least one infrared sensor can also be used, for example, in the interior of motor vehicles to detect the body temperature of the vehicle occupants, especially to distinguish between dead and living organisms.

This at least one infrared sensor can also be used in the interiors of motor vehicles to detect the body temperature of the vehicle occupants, even when the vehicle is locked outside. This enables the detection of the increased body temperature of children or pets remaining in the vehicle in relation to the surroundings, for the purpose of issuing an alarm in order to avoid accidents.

Thermopile array in an infrared camera

Another proposed silicided thermopile preferably comprises at least one thermocouple free of metal layers.

The thermocouple without metal layers comprises a first thermocouple (TE1) and a second thermocouple (TE2).

The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material except for possible doping. The first thermocouple (TE1) and the second thermocouple (TE2) are electrically connected to one another by an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2) each with additional types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.

The material of the first thermocouple (TE1) and the second thermocouple (TE2) is preferably polycrystalline silicon, so-called polysilicon. Consequently, the electrically conductive connection from the electrically conductive connection of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with other types of atoms is a silicide.

The electrically conductive connection from the electrically conductive connection of the material of the first thermocouple (TE1) and of the second thermocouple (TE2) with other types of atoms titanium silicide and / or tungsten silicide and / or cobalt silicide and / or nickel silicide and / or an electrically conductive silicide is preferred other metal.

The first thermocouple (TE1) and the second thermocouple (TE2) are preferably in the same plane. The electrically conductive connecting silicide is in the same layer plane of the CMOS stack as the first thermocouple (TE1) and the second thermocouple (TE2).

The first thermocouple (TE1) is made of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) is made of heavily doped polysilicon of a second doping type. The first type of doping can be p-doping or n-doping. The second doping type is p-doping when the first doping type is n-doping. The second doping type is n-doping if the first doping type is p-doping.

Doping the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be dispensed with if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.

The connection points of the proposed silicided thermopile for electrical connection with other electronic components or further thermopiles are made of silicide.

Thermocouples with the same doping are preferably arranged directly next to one another.

A proposed thermopile array comprises a one- or two-dimensional arrangement of at least two proposed thermopiles.

The thermopiles of the thermopile array are electrically connected to one another by siliciding.

An infrared camera according to the proposal comprises at least one thermopile array from the proposal, i.e. non-metallic thermopiles.

A proposed method for improving the images of an external camera of a motor vehicle in the dark uses the additional image information from a proposed infrared camera. Here, the image information from the infrared camera and the second external camera are combined to form common image information. This combination is done by summing the amplitude values.

Halios device with thermopile

In this variant, the explanation of the Halios device in FIG 12th which follows this description. The Halios principle is explained there.

Another proposed silicided thermopile comprises at least one metal-layer-free thermocouple.

The thermocouple without metal layers comprises a first thermocouple (TE1) and a second thermocouple (TE2).

The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material except for possible doping. The first thermocouple (TE1) and the second thermocouple (TE2) are electrically connected to one another by an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2) each with additional types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.

The material of the first thermocouple (TE1) and the second thermocouple (TE2) is preferably polycrystalline silicon. Consequently, the electrically conductive connection from the electrically conductive connection of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with other types of atoms is a silicide, preferably titanium silicide and / or tungsten silicide and / or cobalt silicide and / or nickel silicide and / or a electrically conductive silicide of another metal.

The first thermocouple (TE1) and the second thermocouple (TE2) are preferably in the same plane. The electrically conductive connecting silicide is in the same layer plane of the CMOS stack as the first thermocouple (TE1) and the second thermocouple (TE2).

The first thermocouple (TE1) is made of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) is made of heavily doped polysilicon of a second doping type. The first type of doping can be p-doping or n-doping. The second doping type is p-doping when the first doping type is n-doping. The second doping type is n-doping if the first doping type is p-doping.

Doping the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be dispensed with if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.

The connection points of the proposed silicided thermopile for electrical connection with other electronic components or further thermopiles are made of silicide.

Thermocouples with the same doping are preferably arranged directly next to one another.

In a Halios device, at least one proposed thermopile is used in a receiver (D).

In summary, such a thermopile-Halios system can thus be described as a Halios device, with a transmitter (H) and a compensation transmitter (K) which radiate into a receiver (D) in a complementary manner. The receiver (D) generates a received signal (S0), the transmission amplitude of the transmitter (H) and / or the transmission amplitude of the compensation transmitter (K) being regulated by a controller (V, MP1, F, MP, A) in the manner that essentially a direct signal results as the received signal (S0) apart from control errors and / or external interference. The proposed device is characterized in that at least one thermopile is used as a receiver (D) for electromagnetic radiation from the transmitter (H) and the compensation transmitter (K). The thermopile is preferably free of metal layers and / or non-metallic.

In this context, the following prior art property rights, which describe the Halios principle, should be noted: EP 2,817,657 B, DE 10 001 955 A1 , DE 10 001 943 C1 , DE 10 346 741 B3 , EP 2 936 201 A1 , WO 2007 012 502 A1 , EP 1 671 160 A1 , EP 1 410 507 A1 , EP 1435 509 A1 , EP 1 269 929 A1 , EP 1 258 084 A , EP 1 480 015 A1 , EP 1 579 307 B1 , DE 10 2005 045 993 B4 , EP 0 706 648 A1 , EP 2 016 480 A2 , EP 2 783 232 B1 , DE 11 2013 002 097 A5 , EP 2 679 982 A1 , DE 10 2013 013 664 B3 , DE 10 2012 010 627 A1 , DE 10 2013 019 660 A1 , DE 10 2013 000 376 A1 , EP 2 405 283 B1 , DE 10 2015 002 271 A1 , DE 10 2015 006 174 B3 , DE 10 2014 019 172 A1 , DE 10 2015 015 389 A1 , DE 10 2017 100 308 B3 , DE 10 2017 100 306 A1 .

The use of the principle presented here that a thermocouple is free of metal by means of silicides and the use as a receiver in a Halios system together with the applications of the prior art documents presented above is a full part of this disclosure and claim. The applicant expressly reserves the right to divide parts of the technical teaching of the documents in combination with the new inventive features in the registration process as separate divisional applications.

Membrane-free thermopile / thermopile as cantilever

A proposed thermocouple is free of metal layers.

A thermopile can be implemented with at least one proposed thermocouple free of metal layers.

A proposed thermocouple free of metal layers comprises a first thermocouple (TE1) and a second thermocouple (TE2). The first thermocouple (TE1) and the second thermocouple (TE2) are made of the same material apart from the respective doping. The first thermocouple (TE1) and the second thermocouple (TE2) are electrically connected to one another via an electrically conductive connection. The electrically conductive connection consists of the electrically conductive connection of the material of the first thermocouple (TE1) and the electrically conductive connection of the material of the second thermocouple (TE2) each with additional types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel atoms.

The material of the first thermocouple (TE1) and the second thermocouple (TE2) is preferably polycrystalline silicon. The conductive connection from the electrically conductive connection of the material of the first thermocouple (TE1) and of the second thermocouple (TE2) with other types of atoms is preferably a silicide.

The conductive connection from the electrically conductive connection of the material of the first thermocouple (TE1) and the second thermocouple (TE2) with further atomic types titanium silicide and / or tungsten silicide and / or cobalt silicide and / or nickel silicide and / or an electrically conductive silicide is preferred other metal.

The first thermocouple (TE1) is made of heavily doped polysilicon of a first doping type. The second thermocouple (TE2) is made of heavily doped polysilicon of a second doping type.
The first type of doping can be p-doping or n-doping.
The second doping type is p-doping when the first doping type is n-doping. The second doping type is n-doping if the first doping type is p-doping.

Doping the first thermocouple (TE1) and the second thermocouple (TE2) with different doping types can be dispensed with if either the surface of the first thermocouple (TE1) or the surface of the second thermocouple (TE2) is completely silicided.

The connection points of the proposed silicided thermopile for electrical connection with other electronic components or further thermopiles are made of silicide.

The first thermocouple (TE1) and the second thermocouple (TE2) do not include a dielectric membrane in this variant.

Silicided sensor on membrane

A proposed sensor for electromagnetic radiation, in particular for infrared radiation, is now located on a membrane, in contrast to variant N).

The proposed sensor is free of metal layers.

All electrically conductive connections within the sensor and to other electronic components consist of the electrically conductive connection of the material of the sensor mixed with other types of atoms, in particular metal atoms, for example titanium atoms and / or tungsten atoms and / or cobalt atoms and / or nickel Atoms.

The material of the sensor is silicon or polycrystalline silicon.

The electrically conductive connection from the electrically conductive connection of the material of the sensor with broad types of atoms is a silicide, preferably titanium silicide or tungsten silicide or cobalt silicide or nickel silicide and / or an electrically conductive silicide of another metal.

The membrane on which the sensor is located is preferably made of an oxide or a nitride and can contain absorber and / or absorber layers.

advantage

The electrical connection of thermocouples made of heavily n-doped and heavily p-doped polysilicon by siliciding the polycrystalline silicon, the so-called polysilicon, to form a thermocouple and the implementation of further electrical leads and connections by siliciding the polysilicon enable a structure free of metal layers.

Alternatively, a proposed thermocouple can also be implemented in that the Surface of a thermocouple of the thermocouple is completely silicided. In this case, it is initially irrelevant whether doped or undoped polysilicon is located below this silicidation and whether the other thermocouple consists of doped or undoped polysilicon. The thermocouple with the silicided surface hereby has a Seebeck coefficient that differs from the thermocouple without the silicided surface.

This has the advantage that very thin membranes and CMOS stacks can be implemented with integrated thermocouples, since the thermal expansion coefficients of the functional elements are approximately the same and thus the thermal voltages of the PN diodes are not falsified by mechanical stress effects. This leads to a reduction in the thermal mass and thermal conductivity and consequently to a higher sensitivity of the infrared sensor. In particular, the reaction time constants to changes over time in the irradiation situation of the thermopile elements is improved. The tracking of moving objects in infrared cameras equipped with such thermopiles is improved by the shorter time constant due to the reduced heat capacity. The use of non-metallic heating elements as actuators of a self-test device avoids a reduction in these advantages. Due to the smaller space requirement, a higher packing density of thermocouples can be realized with the same sensor size. This results in a larger sensor signal and thus an improved signal-to-noise ratio.

Furthermore, there is greater functional freedom of design in the CMOS stack and an associated simplification of the process flow. The mechanical robustness is improved due to a reduction in mechanical stresses.

Another essential advantage of the technical teaching disclosed here is the self-adjustment of the silicidation during the manufacture of the thermocouple or thermopile.

Figure list

• 1 shows an exemplary, unclaimed cross section of an infrared thermal sensor according to the prior art ( SdT ). The thermocouples each consist of a thermocouple made of n-doped polysilicon and a thermocouple made of aluminum.
• 2 shows an exemplary, unclaimed cross section of an infrared thermal sensor according to the prior art ( SdT ). The thermocouples each consist of a thermocouple made of heavily p-doped silicon and a thermocouple made of aluminum.
• 3 shows an exemplary, unclaimed cross section of an infrared thermal sensor according to the prior art ( SdT ). The thermocouples each consist of a thermocouple made of p-doped polysilicon and a thermocouple made of n-doped polysilicon.
• 4th shows an exemplary, unclaimed cross section of an infrared thermal sensor according to the prior art ( SdT ). The thermocouples each consist of a thermocouple made of heavily p-doped silicon and a thermocouple made of n-doped polysilicon.
• 5 shows an example of the cross section of a possible structure of the proposed thermocouple. A thermocouple is made of heavily n-doped polysilicon and a thermocouple is made of heavily p-doped silicon. The thermocouple is free of metal layers.
• 6 shows a simplified representation of a possible structure of the proposed thermocouple. The simplified representation illustrates the arrangement of thermocouples and silicidation relative to one another.
• 7th shows a simplified representation of a possible structure of the proposed thermocouple, in which a silicidation acts as a thermocouple.
• 8th shows an example of a series connection of four proposed thermocouples to form a proposed thermopile. It is highlighted which thermocouples are part of a thermocouple.
• 9 shows the same exemplary series connection of four proposed thermocouples to form a proposed thermopile as 8th . The highlighting of which thermocouples are part of a thermocouple has been omitted for better clarity.
• 10 shows an example of the improved layout of a series connection of four proposed thermocouples to form a proposed thermopile. Here, areas with the same doping are adjacent. As a result, smaller distances between the thermocouples and a simplification of the manufacturing process can be achieved.
• 11 shows an example of a possible structure for a proposed test structure for up to two proposed thermopiles by comparing the temperature determined by the thermopile to be tested with the temperature determined by a further different thermo-sensitive sensor structure. The individual elements of the test structure are highlighted by ellipses with a dashed border for faster understanding.
• 12th shows a state of the art ( SdT ) corresponding Halios device. According to the proposal, a proposed thermopile can be used here as a receiver.

Description of the figures

The figures represent possible embodiments and uses of the invention. However, the invention is not restricted thereto. The claims are authoritative for the claimed scope.

Figure 1

1 shows an exemplary cross section of an infrared thermal sensor according to the prior art ( SdT ). The thermocouples each consist of a thermocouple made of n-doped polysilicon and a thermocouple made of aluminum.

On a second substrate ( SUB2 ) there is a second membrane ( MEM2 ).
On the second membrane ( MEM2 ) there is a second insulation layer (12).
A third insulation layer (13) is located on the second insulation layer (12).

The second substrate ( SUB2 ) is made of doped or undoped silicon or of doped or undoped polysilicon. The second membrane ( MEM2 ) is made of a dielectric material.

At a fifth distance ( d5 ) from a second left side surface ( SPF2 ) of the described stack, consisting of the second substrate ( SUB2 ) and the second membrane ( MEM2 ) and the second insulation layer (12) and the third insulation layer (13), and at a seventh distance ( d7 ) from a second rear side surface ( HSF2 ) of the described stack, there is a third trench ( G3 ) with a width ( BG3 ) of the third trench ( G3 ) and a length ( LG3 ) of the third trench ( G3 ) and a height ( HG3 ) of the third trench ( G3 ) from the surface of the third insulation layer (13) to the second substrate ( SUB2 ) introduced into it.

At a sixth distance ( d6 ) from a second right side face ( RSF2 ) of the described stack and at an eighth distance ( d8 ) from the second rear side surface ( HSF2 ) of the described stack, is a fourth trench ( G4 ) with a width ( BG4 ) of the fourth trench ( G4 ) and a length ( LG4 ) of the fourth trench ( G4 ) and a height ( HG4 ) of the fourth trench ( G4 ) from the surface of the third insulation layer (13) to the second substrate ( SUB2 ) introduced into it.

The fifth distance ( d5 ) is equal to the sixth distance ( d6 ). The seventh distance ( d7 ) is equal to the eighth distance ( d8 ). The width ( BG3 ) of the third trench ( G3 ) is equal to the width ( BG4 ) of the fourth trench ( G4 ). The length ( LG3 ) of the third trench ( G3 ) is equal to the length ( LG4 ) of the fourth trench ( G4 ). The height ( HG3 ) of the third trench ( G3 ) is equal to the height ( HG4 ) of the fourth trench ( G4 ).

Between the third ditch ( G3 ) and the fourth trench ( G4 ) is below the second membrane ( MEM2 ) a substrate-free second cavity ( C2 ) brought in.

The second insulation layer (12) comprises above the second cavity ( C2 ) a fourth thermocouple ( TE4 ) and a sixth thermocouple ( TE6 ). The third insulation layer (13) comprises above the second cavity ( C2 ) a third thermocouple ( TE3 ) and a fifth thermocouple ( TE5 ). The third thermocouple ( TE3 ) is electrically conductive with the fourth thermocouple ( TE4 ) connected. The fifth thermocouple ( TE5 ) is electrically conductive with the sixth thermocouple ( TE6 ) connected. The third thermocouple ( TE3 ) and the fifth thermocouple ( TE5 ) are made of aluminum. The fourth thermocouple ( TE4 ) and the sixth thermocouple ( TE6 ) are made of n-doped polysilicon. The electrically conductive connection between the third thermocouple ( TE3 ) and the fourth thermocouple ( TE4 ) is made of aluminum. The electrically conductive connection between the fifth thermocouple ( TE5 ) and the sixth thermocouple ( TE6 ) is made of aluminum.

Figure 2

2 shows an exemplary cross section of an infrared thermal sensor according to the prior art ( SdT ). The thermocouples each consist of a thermocouple made of heavily p-doped silicon and a thermocouple made of aluminum.

On a third substrate ( SUB3 ) there is a third membrane ( MEM3 ). On the third membrane ( MEM3 ) there is a fourth insulation layer (14). A fifth insulation layer (15) is located on the fourth insulation layer (14).

The third substrate ( SUB3 ) is made of doped or undoped silicon or of doped or undoped polysilicon. The third membrane ( MEM3 ) is made of a dielectric material.

At a ninth distance ( d9 ) from a third left side surface ( SPF3 ) of the described stack, consisting of the third substrate ( SUB3 ) and the third membrane ( MEM3 ) and the fourth insulation layer (14) and the fifth insulation layer (15), and at an eleventh distance ( d11 ) from a third rear side surface ( HSF3 ) of the described stack, there is a fifth trench ( G5 ) with a width ( BG5 ) of the fifth trench ( G5 ) and a length ( LG5 ) of the fifth trench ( G5 ) and a height ( HG5 ) of the fifth trench ( G5 ) from the surface of the fifth insulation layer (15) to the third substrate ( SUB3 ) introduced into it.

At a tenth distance ( d10 ) from a third right side face ( RSF3 ) of the described stack and at a twelfth distance ( d12 ) from the third rear side surface ( HSF3 ) of the described stack, is a sixth trench ( G6 ) with a width ( BG6 ) of the sixth trench ( G6 ) and a length ( LG6 ) of the sixth trench ( G6 ) and a height ( HG6 ) of the sixth trench ( G6 ) from the surface of the fifth insulation layer (15) to the third substrate ( SUB3 ) introduced into it.

The ninth distance ( d9 ) is equal to the tenth distance ( d10 ). The eleventh distance ( d11 ) is equal to the twelfth distance ( d12 ). The width ( BG5 ) of the fifth trench ( G5 ) is equal to the width ( BG6 ) of the sixth trench ( G6 ). The length ( LG5 ) of the fifth trench ( G5 ) is equal to the length ( LG6 ) of the sixth trench ( G6 ). The height ( HG5 ) of the fifth trench ( G5 ) is equal to the height ( HG6 ) of the sixth trench ( G6 ).

Between the fifth trench ( G5 ) and the sixth trench ( G6 ) is below the third membrane ( MEM3 ) a substrate-free third cavity ( C3 ) brought in. In the third cavity ( C3 ) is a first tub ( W1 ) brought in. The first tub ( W1 ) includes a seventh thermocouple ( TE7 ) and a ninth thermocouple ( TE9 ). The fourth insulation layer (14) and the fifth insulation layer (15) comprise an eighth thermocouple ( TE8 ). The fourth insulation layer (14) and the fifth insulation layer (15) comprise a tenth thermocouple ( TE10 ). The eighth thermocouple ( TE8 ) is electrically conductive with the seventh thermocouple ( TE7 ) connected. The tenth thermocouple ( TE10 ) is electrically conductive with the ninth thermocouple ( TE9 ) connected.

The first tub ( W1 ) is made of n-doped polysilicon or n-doped silicon. The seventh thermocouple ( TE7 ) is made of heavily p-doped polysilicon. The ninth thermocouple ( TE9 ) is made of heavily p-doped polysilicon. The eighth thermocouple ( TE8 ) is made of aluminum. The ninth thermocouple ( TE9 ) is made of aluminum.

Figure 3

3 shows an exemplary cross section of an infrared thermal sensor according to the prior art ( SdT ). The thermocouples each consist of a thermocouple made of p-doped polysilicon and a thermocouple made of n-doped polysilicon.

On a fourth substrate ( SUB4 ) there is a fourth membrane ( MEM4 ).
On the fourth membrane ( MEM4 ) there is a sixth insulation layer (16).
A seventh insulation layer (17) is located on the sixth insulation layer (16).
An eighth insulation layer (18) is located on the seventh insulation layer (17).

The fourth substrate ( SUB4 ) is made of doped or undoped silicon or of doped or undoped polysilicon. The fourth membrane ( MEM4 ) is made of a dielectric material.

At a thirteenth distance ( d13 ) from a fourth left side face ( SPF4 ) of the described stack, consisting of the fourth substrate ( SUB4 ) and the fourth membrane ( MEM4 ) and the sixth insulation layer (16) and the seventh insulation layer (17) and the eighth insulation layer (18), and at a fifteenth distance ( d15 ) from a fourth rear side surface ( HSF4 ) of the described stack, there is a seventh trench ( G7 ) with a width ( BG7 ) of the seventh trench ( G7 ) and a length ( LG7 ) of the seventh trench ( G7 ) and a height ( HG7 ) of the seventh trench ( G7 ) from the surface of the eighth insulation layer (18) to the fourth substrate ( SUB4 ) introduced into it.

At a fourteenth distance ( d14 ) from a fourth right side face ( RSF4 ) of the described stack and at a sixteenth distance ( d16 ) from the fourth rear side surface ( HSF4 ) of the described stack, there is an eighth trench ( G8 ) with a width ( BG8 ) of the eighth trench ( G8 ) and a length ( LG8 ) of the eighth trench ( G8 ) and a height ( HG8 ) of the eighth trench ( G8 ) from the surface of the eighth insulation layer (18) to the fourth substrate ( SUB4 ) introduced into it.

The thirteenth distance ( d13 ) is equal to the fourteenth distance ( d14 ). The fifteenth distance ( d15 ) is equal to the sixteenth distance ( d16 ). The width ( BG7 ) of seventh trench ( G7 ) is equal to the width ( BG8 ) of the eighth trench ( G8 ). The length ( LG7 ) of the seventh trench ( G7 ) is equal to the length ( LG8 ) of the eighth trench ( G8 ). The height ( HG7 ) of the seventh trench ( G7 ) is equal to the height ( HG8 ) of the eighth trench ( G8 ).

Between the seventh trench ( G7 ) and the eighth trench ( G8 ) is below the fourth membrane ( MEM4 ) a substrate-free fourth cavity ( C4 ) brought in.

The sixth insulation layer (16) comprises above the fourth cavity ( C4 ) a twelfth thermocouple ( TE12 ) and a fourteenth thermocouple ( TE14 ). The seventh insulation layer (17) comprises above the fourth cavity ( C4 ) an eleventh thermocouple ( TE11 ) and a thirteenth thermocouple ( TE13 ). The eighth insulation layer (18) above the eleventh thermocouple ( TE11 ) and the twelfth thermocouple ( TE12 ) a first metallic connection ( M1 ). The eighth insulation layer (18) comprises above the thirteenth thermocouple ( TE13 ) and the fourteenth thermocouple ( TE14 ) a second metallic connection ( M2 ). The first metallic connection ( M1 ) connects the eleventh thermocouple ( TE11 ) and the twelfth thermocouple ( TE12 ) electrically with each other. The second metallic connection ( M2 ) connects the thirteenth thermocouple ( TE13 ) and the fourteenth thermocouple ( TE14 ) electrically with each other.

The eleventh thermocouple ( TE11 ) and the thirteenth thermocouple ( TE13 ) are made of p-doped polysilicon. The twelfth thermocouple ( TE12 ) and the fourteenth thermocouple ( TE14 ) are made of n-doped polysilicon. The first metallic connection ( M1 ) and the second metallic connection ( M2 ) are made of aluminum.

Figure 4

4th shows an exemplary cross section of an infrared thermal sensor according to the prior art ( SdT ). The thermocouples each consist of a thermocouple made of heavily p-doped silicon and a thermocouple made of n-doped polysilicon.

On a fifth substrate ( SUB5 ) there is a fifth membrane ( MEM5 ). On the fifth membrane ( MEM5 ) there is a ninth insulation layer (19). On the ninth insulation layer (19) there is a tenth insulation layer ( 110 ).

The fifth substrate ( SUB5 ) is made of doped or undoped silicon or of doped or undoped polysilicon. The fifth membrane ( MEM5 ) is made of a dielectric material.

At a seventeenth distance ( d17 ) from a fifth left side face ( SPF5 ) of the described stack, consisting of the fifth substrate ( SUB5 ) and the fifth membrane ( MEM5 ) and the ninth insulation layer (19) and the tenth insulation layer ( 110 ), and at a nineteenth distance ( d19 ) from a fifth rear side surface ( HSF5 ) of the described stack, there is a ninth trench ( G9 ) with a width ( BG9 ) of the ninth trench ( G9 ) and a length ( LG9 ) of the ninth trench ( G9 ) and a height ( HG9 ) of the ninth trench ( G9 ) from the surface of the tenth insulation layer ( 110 ) to the fifth substrate ( SUB5 ) introduced into it.

At an eighteenth distance ( d18 ) from a fifth right side face ( RSF5 ) of the described stack and at a twentieth distance ( d20 ) from the fifth rear side surface ( HSF5 ) of the described stack, there is a tenth trench ( G10 ) with a width ( BG10 ) of the tenth trench ( G10 ) and a length ( LG10 ) of the tenth trench ( G10 ) and a height ( HG10 ) of the tenth trench ( G10 ) from the surface of the tenth insulation layer ( 110 ) to the fifth substrate ( SUB5 ) introduced into it.

The seventeenth distance ( d17 ) is preferably equal to the eighteenth distance ( d18 ).
The nineteenth distance ( d19 ) is preferably equal to the twentieth distance ( d20 ).
The width ( BG9 ) of the ninth trench ( G9 ) is preferably equal to the width ( BG10 ) of the tenth trench ( G10 ).
The length ( LG9 ) of the ninth trench ( G9 ) is preferably equal to the length ( LG10 ) of the tenth trench ( G10 ).
The height ( HG9 ) of the ninth trench ( G9 ) is preferably equal to the height ( HG10 ) of the tenth trench ( G10 ).

Between the ninth trench ( G9 ) and the tenth trench ( G10 ) is below the fifth membrane ( MEM5 ) a substrate-free fifth cavity ( C5 ) brought in. In the fifth cavity ( C5 ) are a fifteenth thermocouple ( TE15 ) and a seventeenth thermocouple ( TE17 ), directly below the fifth membrane ( MEM5 ), brought in. The ninth insulation layer (19) comprises a sixteenth thermocouple ( TE16 ) and an eighteenth thermocouple ( TE18 ).

The tenth insulation layer ( 110 ) includes above the fifteenth thermocouple ( TE15 ) and the sixteenth thermocouple ( TE16 ) a third metallic connection ( M3 ). The tenth insulation layer ( 110 ) includes above the seventeenth thermocouple ( TE17 ) and the eighteenth thermocouple ( TE18 ) a fourth metallic connection ( M4 ). The third metallic connection ( M3 ) connects the fifteenth thermocouple ( TE15 ) and the sixteenth thermocouple ( TE16 ) electrically with each other. The fourth metallic connection ( M4 ) connects the seventeenth thermocouple ( TE17 ) and the eighteenth thermocouple ( TE18 ) electrically with each other.

The fifteenth thermocouple ( TE15 ) and the seventeenth thermocouple ( TE17 ) are made of heavily p-doped polysilicon. The sixteenth thermocouple ( TE16 ) and the eighteenth thermocouple ( TE18 ) are made of n-doped polysilicon. The third metallic connection ( M3 ) and the fourth metallic connection ( M4 ) are made of aluminum.

Figure 5

5 shows an example of the cross section of a possible structure of the proposed thermocouple.

On a first substrate ( SUB1 ) there is a first membrane ( MEM1 ). On the first membrane ( MEM1 ) there is a first polysilicon layer ( PS1 ). On the first polysilicon layer ( PS1 ) there is a first insulation layer ( II ).

The first substrate ( SUB1 ) is made of doped or undoped silicon or of doped or undoped polysilicon. The first membrane ( MEM1 ) is made of a dielectric material, for example an oxide or a nitride. The first membrane ( MEM1 ) can contain absorbers and / or absorber layers for infrared radiation.

At a first distance ( d1 ) from a first left side surface ( SPF1 ) of the described stack, consisting of the first substrate ( SUB1 ) and the first membrane ( MEM1 ) and the first polys-silicon layer ( PS1 ) and the first insulation layer ( 11 ), and at a third distance ( d3 ) from a first rear side surface ( HSF1 ) of the described stack, there is a first trench ( G1 ) with a width ( BG1 ) of the first trench ( G1 ) and a length ( LG1 ) of the first trench ( G1 ) and a height ( HG1 ) of the first trench ( G1 ) from the surface of the first insulation layer ( I1 ) down to the first substrate ( SUB1 ) introduced into it.

At a second distance ( d2 ) from a first right side surface ( RSF1 ) of the described stack and at a fourth distance ( d4 ) from the first rear side surface ( HSF1 ) of the described stack, there is a second trench ( G2 ) with a width ( BG2 ) of the second trench ( G2 ) and a length ( LG2 ) of the second trench ( G2 ) and a height ( HG2 ) of the second trench ( G2 ) from the surface of the first insulation layer ( I1 ) down to the first substrate ( SUB1 ) introduced into it.

The first distance ( d1 ) equal to the second distance ( d2 ). The third distance ( d3 ) equal to the fourth distance ( d4 ). The preferred is the width ( BG1 ) of the first trench ( G1 ) equal to the width ( BG2 ) of the second trench ( G2 ). The preferred length ( LG1 ) of the first trench ( G1 ) equal to the length ( LG2 ) of the second trench ( G2 ). Preferred is the height ( HG1 ) of the first trench ( G1 ) equal to the height ( HG2 ) of the second trench ( G2 ).

Between the first ditch ( G1 ) and the second trench ( G2 ) is below the first membrane ( MEM1 ) a substrate-free first cavity ( C1 ) brought in.

The first polysilicon layer ( PS1 ) includes above the first cavity ( C1 ) a first thermocouple ( TE1 ) and a second thermocouple ( TE2 ) and a second silicidation ( SI2 ). The second silicidation ( SI2 ) is located between the first thermocouple ( TE1 ) and the second thermocouple ( TE2 ). The second silicidation ( SI2 ) connects the first thermocouple ( TE1 ) and the second thermocouple ( TE2 ) electrically with each other.

The first thermocouple ( TE1 ) consists of heavily doped polysilicon of a first doping type. The second thermocouple ( TE2 ) consists of heavily doped polysilicon of a second doping type. The first type of doping can be n-doping or p-doping. The second doping type is p-doping when the first doping type is n-doping. The second doping type is n-doping if the first doping type is p-doping. The second silicidation ( SI2 ) consists of, for example, titanium silicided polysilicon.

Between the first left side surface ( SPF1 ) and the first ditch ( G1 ) comprises the first polysilicon layer ( PS1 ) a first silicidation ( SI1 ). Between the first right side surface ( RSF1 ) and the second trench ( G2 ) comprises the first polysilicon layer ( PS1 ) a third silicidation (S13). The first silicidation ( SI1 ) consists of, for example, titanium silicided polysilicon. The third silicidation ( SI3 ) consists of, for example, titanium silicided polysilicon. The first silicidation ( SI1 ) and the third silicidation ( SI3 ) serve as electrically conductive connection points for further thermocouples or other electronic components.

Reference is again made here to the other possibilities of siliciding already described.

Figure 6

6 shows a simplified representation of a possible structure of the proposed Thermocouples. The simplified representation illustrates the arrangement of thermocouples and silicidation relative to one another.

A nineteenth thermocouple ( TE19 ) is adjacent to a twentieth thermocouple ( TE20 ).

The nineteenth thermocouple ( TE19 ) consists of heavily doped polysilicon of a first doping type. The twentieth thermocouple ( TE20 ) consists of heavily doped polysilicon of a second doping type. The first type of doping can be n-doping or p-doping. The second doping type is p-doping when the first doping type is n-doping. The second doping type is n-doping if the first doping type is p-doping.

The nineteenth thermocouple ( TE19 ) and the twentieth thermocouple ( TE20 ) form a pn junction.

From the surface of the nineteenth thermocouple ( TE19 ) and the twentieth thermocouple ( TE20 ) to the nineteenth thermocouple ( TE19 ) and the twentieth thermocouple ( TE20 ) into it, a twentieth silicidation extends ( SI20 ). The twentieth silicidation ( SI20 ) separates the nineteenth thermocouple ( TE19 ) and the twentieth thermocouple ( TE20 ) but not spatially. Below the twentieth silicidation ( SI20 ) a pn junction remains.

The twentieth silicidation ( SI20 ) consists of polysilicon that has been silicided by means of titanium atoms, for example. Silicidation by means of tungsten and / or cobalt and / or nickel atoms and / or other suitable metal atoms is also possible.

Figure 7

7th shows a simplified representation of a possible structure of the proposed thermocouple, in which a silicidation acts as a thermocouple.

A twenty-first thermocouple ( TE21 ) is adjacent to a twenty-second thermocouple ( TE22 ). The twenty-first thermocouple ( TE21 ) is made of undoped polysilicon or of doped polysilicon. The twenty-second thermocouple ( TE22 ) is made of undoped polysilicon or of doped polysilicon and comprises a twenty-first silicidation ( SI21 ). The twenty-first silicidation ( SI21 ) extends over the entire surface of the polysilicon of the twenty-second thermocouple ( TE22 ).

For using the twenty-first thermocouple ( TE21 ) and the twenty-first silicidation ( SI21 ) comprehensive twenty-second thermocouple ( TE22 ) as a thermocouple are the different Seebeck coefficients of the twenty-first thermocouple ( TE21 ) and the twenty-first silicidation ( SI21 ) crucial.

Figure 8

8th shows an example of a series connection of four proposed thermocouples to form a proposed thermopile. It is highlighted which thermocouples are part of a thermocouple. For this purpose, the thermocouples of a thermocouple are enclosed in a rectangle with a dashed border.

A first thermocouple ( TC11 ) of a first thermocouple ( TC1 ) is through a fourth silicidation ( SI4 ) with a second thermocouple ( TC12 ) of the first thermocouple ( TC1 ) electrically connected.

A first thermocouple ( TC21 ) a second thermocouple ( TC2 ) is through a fifth silicidation ( SI5 ) with a second thermocouple ( TC22 ) of the second thermocouple ( TC2 ) electrically connected.

A first thermocouple ( TC31 ) a third thermocouple ( TC3 ) is through a sixth silicidation ( SI6 ) with a second thermocouple ( TC32 ) of the third thermocouple ( TC3 ) electrically connected.

A first thermocouple (T41) of a fourth thermocouple ( TC4 ) is through a seventh silicidation ( SI7 ) with a second thermocouple (TC42) of the fourth thermocouple ( TC4 ) electrically connected.

A first thermocouple (T51) of a fifth thermocouple ( TC5 ) is through an eighth silicidation ( SI8 ) with a second thermocouple ( TC52 ) of the fifth thermocouple ( TC5 ) electrically connected.

The second thermocouple ( TC12 ) of the first thermocouple ( TC1 ) is about a ninth silicidation ( SI9 ) with the first thermocouple ( TC21 ) of the second thermocouple ( TC2 ) electrically connected.

The second thermocouple ( TC22 ) of the second thermocouple ( TC2 ) is about a tenth silicidation ( SI10 ) with the first thermocouple ( TC31 ) of the third thermocouple ( TC3 ) electrically connected.

The second thermocouple ( TC32 ) of the third thermocouple ( TC3 ) is about an eleventh silicidation ( SI11 ) with the first thermocouple ( TC41 ) of the fourth thermocouple ( TC4 ) electrically connected.

The second thermocouple (TC42) of the fourth thermocouple ( TC4 ) is about a twelfth silicidation ( SI12 ) with the first thermocouple ( TC51 ) of the fifth thermocouple ( TC5 ) electrically connected.

The first thermocouple ( TC11 ) of the first thermocouple ( TC1 ) is through a thirteenth silicidation ( SI13 ) with a first connection pad ( P1 ) electrically connected.

The second thermocouple ( TC52 ) of the fifth thermocouple ( TC5 ) is through a fourteenth silicidation ( SI14 ) with a second connection pad ( P2 ) electrically connected.

Between the first connection pad ( P1 ) and the second connection pad ( P2 ) there is a temperature-dependent voltage ( UT ) at.

The first thermocouple ( TC11 ) of the first thermocouple ( TC1 ) and the first thermocouple ( TC12 ) of the second thermocouple ( TC2 ) and the first thermocouple ( TC31 ) of the third thermocouple ( TC3 ) and the first thermocouple ( TC41 ) of the fourth thermocouple ( TC4 ) and the first thermocouple ( TC51 ) of the fifth thermocouple ( TC5 ) are strips of heavily doped polysilicon of a first doping type. The first type of doping is in 8th represented by vertical dashed lines. The first type of doping can be p- or n-doping.

The second thermocouple ( TC1 ) of the first thermocouple ( TC1 ) and the second thermocouple ( TC22 ) of the second thermocouple ( TC2 ) and the second thermocouple ( TC32 ) of the third thermocouple ( TC3 ) and the second thermocouple (TC42) of the fourth thermocouple ( TC4 ) and the second thermocouple ( TC52 ) of the fifth thermocouple ( TC5 ) are strips of heavily doped polysilicon of a second doping type. The first type of doping is in 8th represented by horizontal dashed lines. The second doping type is p-doping when the first doping type is n-doping. The second doping type is n-doping if the first doping type is p-doping.

The shape and position of the thermocouples and the silicidations is shown here only as an example and can also be implemented differently.

Figure 9

9 shows the same exemplary series connection of four proposed thermocouples to form a proposed thermopile as 8th . The emphasis on which thermocouples are part of a thermocouple has been omitted for better clarity. The following description is identical to the description of the 8th and only given for the sake of completeness.

A first thermocouple ( TC11 ) of a first thermocouple ( TC1 ) is through a fourth silicidation ( SI4 ) with a second thermocouple ( TC12 ) of the first thermocouple ( TC1 ) electrically connected.

A first thermocouple ( TC21 ) a second thermocouple ( TC2 ) is through a fifth silicidation ( SI5 ) with a second thermocouple ( TC22 ) of the second thermocouple ( TC2 ) electrically connected.

A first thermocouple ( TC31 ) a third thermocouple ( TC3 ) is through a sixth silicidation ( SI6 ) with a second thermocouple ( TC32 ) of the third thermocouple ( TC3 ) electrically connected.

A first thermocouple (T41) of a fourth thermocouple ( TC4 ) is through a seventh silicidation ( SI7 ) with a second thermocouple (TC42) of the fourth thermocouple ( TC4 ) electrically connected.

A first thermocouple (T51) of a fifth thermocouple ( TC5 ) is through an eighth silicidation ( SI8 ) with a second thermocouple ( TC52 ) of the fifth thermocouple ( TC5 ) electrically connected.

The second thermocouple ( TC12 ) of the first thermocouple ( TC1 ) is about a ninth silicidation ( SI9 ) with the first thermocouple ( TC21 ) of the second thermocouple ( TC2 ) electrically connected.

The second thermocouple ( TC22 ) of the second thermocouple ( TC2 ) is about a tenth silicidation ( SI10 ) with the first thermocouple ( TC31 ) of the third thermocouple ( TC3 ) electrically connected.

The second thermocouple ( TC32 ) of the third thermocouple ( TC3 ) is about an eleventh silicidation ( SI11 ) with the first thermocouple ( TC41 ) of the fourth thermocouple ( TC4 ) electrically connected.

The second thermocouple (TC42) of the fourth thermocouple ( TC4 ) is about a twelfth silicidation ( SI12 ) with the first thermocouple ( TC51 ) of the fifth thermocouple ( TC5 ) electrically connected.

The first thermocouple ( TC11 ) of the first thermocouple ( TC1 ) is through a thirteenth silicidation ( SI13 ) with a first connection pad ( P1 ) electrically connected.

The second thermocouple ( TC52 ) of the fifth thermocouple ( TC5 ) is through a fourteenth silicidation ( SI14 ) with a second connection pad ( P2 ) electrically connected.

Between the first connection pad ( P1 ) and the second connection pad ( P2 ) there is a temperature-dependent voltage ( UT ) at.

The first thermocouple ( TC11 ) of the first thermocouple ( TC1 ) and the first thermocouple ( TC12 ) of the second thermocouple ( TC2 ) and the first thermocouple ( TC31 ) of the third thermocouple ( TC3 ) and the first thermocouple ( TC41 ) of the fourth thermocouple ( TC4 ) and the first thermocouple ( TC51 ) of the fifth thermocouple ( TC5 ) are strips of heavily doped polysilicon of a first doping type. The first type of doping is in 8th represented by vertical dashed lines. The first type of doping can be p- or n-doping.

The second thermocouple ( TC1 ) of the first thermocouple ( TC1 ) and the second thermocouple ( TC22 ) of the second thermocouple ( TC2 ) and the second thermocouple ( TC32 ) of the third thermocouple ( TC3 ) and the second thermocouple (TC42) of the fourth thermocouple ( TC4 ) and the second thermocouple ( TC52 ) of the fifth thermocouple ( TC5 ) are strips of heavily doped polysilicon of a second doping type. The first type of doping is in 8th represented by horizontal dashed lines. The second doping type is p-doping when the first doping type is n-doping. The second doping type is n-doping if the first doping type is p-doping.

The shape and position of the thermocouples and the silicidations is shown here only as an example and can also be implemented differently.

Figure 10

10 shows an example of the improved layout of a series connection of four thermocouple series connections to form a proposed thermopile. A thermocouple series circuit comprises eight thermocouples connected in series. First, the individual thermocouple series connections are described and then their series connection to form a thermopile and the layout of the thermopile.

The first thermocouple series connection ( S1 ) includes a first thermocouple ( S1E1 ) the first thermocouple series circuit ( S1 ) and a second thermocouple ( S1E2 ) the first thermocouple series circuit ( S1 ) and a third thermocouple ( S1E3 ) the first thermocouple series circuit ( S1 ) and a fourth thermocouple ( S1E4 ) the first thermocouple series circuit ( S1 ) and a fifth thermocouple ( S1E5 ) the first thermocouple series circuit ( S1 ) and a sixth thermocouple ( S1E6 ) the first thermocouple series circuit ( S1 ) and a seventh thermocouple ( S1E7 ) the first thermocouple series circuit ( S1 ) and an eighth thermocouple ( S1E8 ) the first thermocouple series circuit ( S1 ) and a first silicidation ( S1S1 ) the first thermocouple series circuit ( S1 ) and a second silicidation ( S1S2 ) the first thermocouple series circuit ( S1 ) and a third silicidation ( S1S3 ) the first thermocouple series circuit ( S1 ) and a fourth silicidation ( S1S4 ) the first thermocouple series circuit ( S1 ) and a fifth silicidation ( S1S5 ) the first thermocouple series circuit ( S1 ) and a sixth silicidation ( S1S6 ) the first thermocouple series circuit ( S1 ) and a seventh silicidation ( S1S7 ) the first thermocouple series circuit ( S1 ).

The second thermocouple series connection ( S2 ) includes a first thermocouple ( S2E1 ) of the second thermocouple series circuit ( S2 ) and a second thermocouple ( S2E2 ) of the second thermocouple series circuit ( S2 ) and a third thermocouple ( S2E3 ) of the second thermocouple series circuit ( S2 ) and a fourth thermocouple ( S2E4 ) of the second thermocouple series circuit ( S2 ) and a fifth thermocouple ( S2E5 ) of the second thermocouple series circuit ( S2 ) and a sixth thermocouple ( S2E6 ) of the second thermocouple series circuit ( S2 ) and a seventh thermocouple ( S2E7 ) of the second thermocouple series circuit ( S2 ) and an eighth thermocouple ( S2E8 ) of the second thermocouple series circuit ( S2 ) and a first silicidation ( S2S1 ) of the second thermocouple series circuit ( S2 ) and a second silicidation ( S2S2 ) of the second thermocouple series circuit ( S2 ) and a third silicidation ( S2S3 ) of the second thermocouple series circuit ( S2 ) and a fourth silicidation ( S2S4 ) of the second thermocouple series circuit ( S2 ) and a fifth silicidation ( S2S5 ) of the second thermocouple series circuit ( S2 ) and a sixth silicidation ( S2S6 ) of the second thermocouple series circuit ( S2 ) and a seventh silicidation ( S2S7 ) of the second thermocouple series circuit ( S2 ).

The third thermocouple series connection ( S3 ) includes a first thermocouple ( S3E1 ) the third thermocouple series circuit ( S3 ) and a second thermocouple ( S3E2 ) the third thermocouple series circuit ( S3 ) and a third thermocouple ( S3E3 ) the third thermocouple series circuit ( S3 ) and a fourth thermocouple ( S3E4 ) the third thermocouple series circuit ( S3 ) and a fifth thermocouple ( S3E5 ) the third thermocouple series circuit ( S3 ) and a sixth thermocouple ( S3E6 ) the third thermocouple series circuit ( S3 ) and a seventh thermocouple ( S3E7 ) the third thermocouple series circuit ( S3 ) and an eighth thermocouple ( S3E8 ) the third thermocouple series circuit ( S3 ) and a first silicidation ( S3S1 ) the third thermocouple series circuit ( S3 ) and a second silicidation ( S3S2 ) the third thermocouple series circuit ( S3 ) and a third silicidation ( S3S3 ) the third thermocouple series circuit ( S3 ) and a fourth silicidation ( S3S4 ) the third thermocouple series circuit ( S3 ) and a fifth silicidation ( S3S5 ) the third thermocouple series circuit ( S3 ) and a sixth silicidation ( S3S6 ) the third thermocouple series circuit ( S3 ) and a seventh silicidation ( S3S7 ) the third thermocouple series circuit ( S3 ).

The fourth thermocouple series connection ( S4 ) includes a first thermocouple ( S4E1 ) of the fourth thermocouple series circuit ( S4 ) and a second thermocouple ( S4E2 ) of the fourth thermocouple series circuit ( S4 ) and a third thermocouple ( S4E3 ) of the fourth thermocouple series circuit ( S4 ) and a fourth thermocouple ( S4E4 ) of the fourth thermocouple series circuit ( S4 ) and a fifth thermocouple ( S4E5 ) of the fourth thermocouple series circuit ( S4 ) and a sixth thermocouple ( S4E6 ) of the fourth thermocouple series circuit ( S4 ) and a seventh thermocouple ( S4E7 ) of the fourth thermocouple series circuit ( S4 ) and an eighth thermocouple ( S4E8 ) of the fourth thermocouple series circuit ( S4 ) and a first silicidation ( S4S1 ) of the fourth thermocouple series circuit ( S4 ) and a second silicidation ( S4S2 ) of the fourth thermocouple series circuit ( S4 ) and a third silicidation ( S4S3 ) of the fourth thermocouple series circuit ( S4 ) and a fourth silicidation ( S4S4 ) of the fourth thermocouple series circuit ( S4 ) and a fifth silicidation ( S4S5 ) of the fourth thermocouple series circuit ( S4 ) and a sixth silicidation ( S4S6 ) of the fourth thermocouple series circuit ( S4 ) and a seventh silicidation ( S4S7 ) of the fourth thermocouple series circuit ( S4 ).

The first thermocouple ( S1E1 ) the first thermocouple series circuit ( S1 ) is due to the first silicidation ( S1S1 ) the first thermocouple series circuit ( S1 ) with the second thermocouple ( S1E2 ) the first thermocouple series circuit ( S1 ) electrically connected. The second thermocouple ( S1E2 ) the first thermocouple series circuit ( S1 ) is due to the second silicidation ( S1S2 ) the first thermocouple series circuit ( S1 ) with the third thermocouple ( S1E3 ) the first thermocouple series circuit ( S1 ) electrically connected. The third thermocouple ( S1E3 ) the first thermocouple series circuit ( S1 ) is due to the third silicidation ( S1S3 ) the first thermocouple series circuit ( S1 ) with the fourth thermocouple ( S1E4 ) the first thermocouple series circuit ( S1 ) electrically connected. The fourth thermocouple ( S1E4 ) the first thermocouple series circuit ( S1 ) is due to the fourth silicidation ( S1S4 ) the first thermocouple series circuit ( S1 ) with the fifth thermocouple ( S1E5 ) the first thermocouple series circuit ( S1 ) electrically connected. The fifth thermocouple ( S1E5 ) the first thermocouple series circuit ( S1 ) is due to the fifth silicidation ( S1S5 ) the first thermocouple series circuit ( S1 ) with the sixth thermocouple ( S1E6 ) the first thermocouple series circuit ( S1 ) electrically connected. The sixth thermocouple ( S1E6 ) the first thermocouple series circuit ( S1 ) is due to the sixth silicidation ( S1S6 ) the first thermocouple series circuit ( S1 ) with the seventh thermocouple ( S1E7 ) the first thermocouple series circuit ( S1 ) electrically connected. The seventh thermocouple ( S1E7 ) the first thermocouple series circuit ( S1 ) is due to the seventh silicidation ( S1S7 ) the first thermocouple series circuit ( S1 ) with the eighth thermocouple ( S1E8 ) the first thermocouple series circuit ( S1 ) electrically connected.

The first thermocouple ( S2E1 ) of the second thermocouple series circuit ( S2 ) is due to the first silicidation ( S2S1 ) of the second thermocouple series circuit ( S2 ) with the second thermocouple ( S2E2 ) the second thermocouple Series connection ( S2 ) electrically connected. The second thermocouple ( S2E2 ) of the second thermocouple series circuit ( S2 ) is due to the second silicidation ( S2S2 ) of the second thermocouple series circuit ( S2 ) with the third thermocouple ( S2E3 ) of the second thermocouple series circuit ( S2 ) electrically connected. The third thermocouple ( S2E3 ) of the second thermocouple series circuit ( S2 ) is due to the third silicidation ( S2S3 ) of the second thermocouple series circuit ( S2 ) with the fourth thermocouple ( S2E4 ) of the second thermocouple series circuit ( S2 ) electrically connected. The fourth thermocouple ( S2E4 ) of the second thermocouple series circuit ( S2 ) is due to the fourth silicidation ( S2S4 ) of the second thermocouple series circuit ( S2 ) with the fifth thermocouple ( S2E5 ) of the second thermocouple series circuit ( S2 ) electrically connected. The fifth thermocouple ( S2E5 ) of the second thermocouple series circuit ( S2 ) is due to the fifth silicidation ( S2S5 ) of the second thermocouple series circuit ( S2 ) with the sixth thermocouple ( S2E6 ) of the second thermocouple series circuit ( S2 ) electrically connected. The sixth thermocouple ( S2E6 ) of the second thermocouple series circuit ( S2 ) is due to the sixth silicidation ( S2S6 ) second thermocouple series circuit ( S2 ) with the seventh thermocouple ( S2E7 ) of the second thermocouple series circuit ( S2 ) electrically connected. The seventh thermocouple ( S2E7 ) of the second thermocouple series circuit ( S2 ) is due to the seventh silicidation ( S2S7 ) of the second thermocouple series circuit ( S2 ) with the eighth thermocouple ( S2E8 ) of the second thermocouple series circuit ( S2 ) electrically connected.

The first thermocouple ( S3E1 ) the third thermocouple series circuit ( S3 ) is due to the first silicidation ( S3S1 ) the third thermocouple series circuit ( S3 ) with the second thermocouple ( S3E2 ) the third thermocouple series circuit ( S3 ) electrically connected. The second thermocouple ( S3E2 ) the third thermocouple series circuit ( S3 ) is due to the second silicidation ( S3S2 ) the third thermocouple series circuit ( S3 ) with the third thermocouple ( S3E3 ) the third thermocouple series circuit ( S3 ) electrically connected. The third thermocouple ( S3E3 ) the third thermocouple series circuit ( S3 ) is due to the third silicidation ( S3S3 ) the third thermocouple series circuit ( S3 ) with the fourth thermocouple ( S3E4 ) the third thermocouple series circuit ( S3 ) electrically connected. The fourth thermocouple ( S3E4 ) the third thermocouple series circuit ( S3 ) is due to the fourth silicidation ( S3S4 ) the third thermocouple series circuit ( S3 ) with the fifth thermocouple ( S3E5 ) the third thermocouple series circuit ( S3 ) electrically connected. The fifth thermocouple ( S3E5 ) the third thermocouple series circuit ( S3 ) is due to the fifth silicidation ( S3S5 ) the third thermocouple series circuit ( S3 ) with the sixth thermocouple ( S3E6 ) the third thermocouple series circuit ( S3 ) electrically connected. The sixth thermocouple ( S3E6 ) the third thermocouple series circuit ( S3 ) is due to the sixth silicidation ( S3S6 ) of the third thermocouple series connection ( S3 ) with the seventh thermocouple ( S3E7 ) the third thermocouple series circuit ( S3 ) electrically connected. The seventh thermocouple ( S3E7 ) the third thermocouple series circuit ( S3 ) is due to the seventh silicidation ( S3S7 ) the third thermocouple series circuit ( S3 ) with the eighth thermocouple ( S3E8 ) the third thermocouple series circuit ( S3 ) electrically connected.

The first thermocouple ( S4E1 ) of the fourth thermocouple series circuit ( S4 ) is due to the first silicidation ( S4S1 ) of the fourth thermocouple series circuit ( S4 ) with the second thermocouple ( S4E2 ) of the fourth thermocouple series circuit ( S4 ) electrically connected. The second thermocouple ( S4E2 ) of the fourth thermocouple series circuit ( S4 ) is due to the second silicidation ( S4S2 ) of the fourth thermocouple series circuit ( S4 ) with the third thermocouple ( S4E3 ) of the fourth thermocouple series circuit ( S4 ) electrically connected. The third thermocouple ( S4E3 ) of the fourth thermocouple series circuit ( S4 ) is due to the third silicidation ( S4S3 ) of the fourth thermocouple series circuit ( S4 ) with the fourth thermocouple ( S4E4 ) of the fourth thermocouple series circuit ( S4 ) electrically connected. The fourth thermocouple ( S4E4 ) of the fourth thermocouple series circuit ( S4 ) is due to the fourth silicidation ( S4S4 ) of the fourth thermocouple series circuit ( S4 ) with the fifth thermocouple ( S4E5 ) of the fourth thermocouple series circuit ( S4 ) electrically connected. The fifth thermocouple ( S4E5 ) of the fourth thermocouple series circuit ( S4 ) is due to the fifth silicidation ( S4S5 ) of the fourth thermocouple series circuit ( S4 ) with the sixth thermocouple ( S4E6 ) of the fourth thermocouple series circuit ( S4 ) electrically connected. The sixth thermocouple ( S4E6 ) of the fourth thermocouple series circuit ( S4 ) is due to the sixth silicidation ( S4S6 ) of the fourth thermocouple series circuit ( S4 ) with the seventh thermocouple ( S4E7 ) of the fourth thermocouple series circuit ( S4 ) electrically connected. The seventh thermocouple ( S4E7 ) of the fourth thermocouple series circuit ( S4 ) is due to the seventh silicidation ( S4S7 ) of the fourth thermocouple series circuit ( S4 ) with the eighth thermocouple ( S4E8 ) of the fourth thermocouple series circuit ( S4 ) electrically connected.

The first thermocouple ( S1E1 ) the first thermocouple series circuit ( S1 ) is about a fifteenth silicidation ( SI15 ) with a first connection pad ( S1P1 ) the first thermocouple series circuit ( S1 ) electrically connected. The eighth thermocouple ( S4E8 ) of the fourth thermocouple series circuit ( S4 ) is about a nineteenth silicidation ( SI19 ) with a first connection pad ( S4P1 ) of the fourth thermocouple series circuit ( S4 ) electrically connected.

The eighth thermocouple ( S1E8 ) the first thermocouple series circuit ( S1 ) is about a sixteenth silicidation ( SI16 ) with the first thermocouple ( S2E1 ) of the second thermocouple series circuit ( S2 ) electrically connected. The eighth thermocouple ( S2E8 ) of the second thermocouple series circuit ( S2 ) is about a seventeenth silicidation ( SI17 ) with the first thermocouple ( S3E1 ) the third thermocouple series circuit ( S3 ) electrically connected. The eighth thermocouple ( S3E8 ) the third thermocouple series circuit ( S3 ) is about an eighteenth silicidation ( SI18 ) with the first thermocouple ( S4E1 ) of the fourth thermocouple series circuit ( S4 ) electrically connected.

The first thermocouple ( S1E1 ) the first thermocouple Series connection ( S1 ) and the third thermocouple ( S1E3 ) the first thermocouple series circuit ( S1 ) and the fifth thermocouple ( S1E5 ) the first thermocouple series circuit ( S1 ) and the seventh thermocouple ( S1E7 ) the first thermocouple series circuit ( S1 ) and the first thermocouple ( S2E1 ) of the second thermocouple series circuit ( S2 ) and the third thermocouple ( S2E3 ) of the second thermocouple series circuit ( S2 ) and the fifth thermocouple ( S2E5 ) of the second thermocouple series circuit ( S2 ) and the seventh thermocouple ( S2E7 ) of the second thermocouple series circuit ( S2 ) and the first thermocouple ( S3E1 ) the third thermocouple series circuit ( S3 ) and the third thermocouple ( S3E3 ) the third thermocouple series circuit ( S3 ) and the fifth thermocouple ( S3E5 ) the third thermocouple series circuit ( S3 ) and the seventh thermocouple ( S3E7 ) the third thermocouple series circuit ( S3 ) and the first thermocouple ( S4E1 ) of the fourth thermocouple series circuit ( S4 ) and the second thermocouple ( S4E2 ) of the fourth thermocouple series circuit ( S4 ) and the third thermocouple ( S4E3 ) of the fourth thermocouple series circuit ( S4 ) and the fourth thermocouple ( S4E4 ) of the fourth thermocouple series circuit ( S4 ) are made of heavily doped polysilicon of a first doping type. The first type of doping is in 10 represented by a dotted pattern. The first type of doping can be p- or n-doping.

The second thermocouple ( S1E2 ) the first thermocouple series circuit ( S1 ) and the fourth thermocouple ( S1E4 ) the first thermocouple series circuit ( S1 ) and the sixth thermocouple ( S1E6 ) the first thermocouple series circuit ( S1 ) and the eighth thermocouple ( S1E8 ) the first thermocouple series circuit ( S1 ) and the second thermocouple ( S2E2 ) of the second thermocouple series circuit ( S2 ) and the fourth thermocouple ( S2E4 ) of the second thermocouple series circuit ( S2 ) and the sixth thermocouple ( S2E6 ) of the second thermocouple series circuit ( S2 ) and the eighth thermocouple ( S2E8 ) of the second thermocouple series circuit ( S2 ) and the second thermocouple ( S3E2 ) the third thermocouple series circuit ( S3 ) and the fourth thermocouple ( S3E4 ) the third thermocouple series circuit ( S3 ) and the sixth thermocouple ( S3E6 ) the third thermocouple series circuit ( S3 ) and the eighth thermocouple ( S3E8 ) the third thermocouple series circuit ( S3 ) and the second thermocouple ( S4E2 ) of the fourth thermocouple series circuit ( S4 ) and the fourth thermocouple ( S4E4 ) of the fourth thermocouple series circuit ( S4 ) and the sixth thermocouple ( S4E6 ) of the fourth thermocouple series circuit ( S4 ) and the eighth thermocouple ( S4E8 ) of the fourth thermocouple series circuit ( S4 ) are made of heavily doped polysilicon of a second doping type. The second type of doping is in 10 represented by non-patterned stripes. The second doping type is n-doping if the first doping type is p-doping. The second doping type is p-doping when the first doping type is n-doping.

The eighth thermocouple ( S1E8 ) the first thermocouple series circuit ( S1 ) borders on there the first thermocouple ( S1E1 ) the first thermocouple series circuit ( S1 ).

The eighth thermocouple ( S2E8 ) of the second thermocouple series circuit ( S2 ) borders on there the first thermocouple ( S2E1 ) of the second thermocouple series circuit ( S2 ).

The eighth thermocouple ( S3E8 ) the third thermocouple series circuit ( S3 ) borders on there the first thermocouple ( S3E1 ) the third thermocouple series circuit ( S3 ).

The first thermocouple ( S4E1 ) of the fourth thermocouple series circuit ( S4 ) borders on there the first thermocouple ( S4E1 ) of the fourth thermocouple series circuit ( S4 ).

The first thermocouple ( S1E1 ) the first thermocouple series circuit ( S1 ) and the second thermocouple ( S1E2 ) the first thermocouple series circuit ( S1 ) and the third thermocouple ( S1E3 ) the first thermocouple series circuit ( S1 ) and the fourth thermocouple ( S1E4 ) the first thermocouple series circuit ( S1 ) and the fifth thermocouple ( S1E5 ) the first thermocouple series circuit ( S1 ) and the sixth thermocouple ( S1E6 ) the first thermocouple series circuit ( S1 ) and the seventh thermocouple ( S1E7 ) the first thermocouple series circuit ( S1 ) and the eighth thermocouple ( S1E8 ) the first thermocouple series circuit ( S1 ) form a closed border of an area.

The first thermocouple ( S2E1 ) of the second thermocouple series circuit ( S2 ) and the second thermocouple ( S2E2 ) of the second thermocouple series circuit ( S2 ) and the third thermocouple ( S2E3 ) of the second thermocouple series circuit ( S2 ) and the fourth thermocouple ( S2E4 ) of the second thermocouple series circuit ( S2 ) and the fifth thermocouple ( S2E5 ) of the second thermocouple series circuit ( S2 ) and the sixth thermocouple ( S2E6 ) of the second thermocouple series circuit ( S2 ) and the seventh thermocouple ( S2E7 ) of the second thermocouple series circuit ( S2 ) and the eighth thermocouple ( S2E8 ) of the second thermocouple series circuit ( S2 ) form a closed border of the area in which the first thermocouple series circuit ( S1 ) is located.

The first thermocouple ( S3E1 ) the third thermocouple series circuit ( S3 ) and the second thermocouple ( S3E2 ) the third thermocouple series circuit ( S3 ) and the third thermocouple ( S3E3 ) the third thermocouple series circuit ( S3 ) and the fourth thermocouple ( S3E4 ) the third thermocouple series circuit ( S3 ) and the fifth thermocouple ( S3E5 ) the third thermocouple series circuit ( S3 ) and the sixth thermocouple ( S3E6 ) the third thermocouple series circuit ( S3 ) and the seventh thermocouple ( S3E7 ) the third thermocouple series circuit ( S3 ) and the eighth thermocouple ( S3E8 ) the third thermocouple series circuit ( S3 ) form a closed border of the area in which the second thermocouple series circuit ( S2 ) is located.

The first thermocouple ( S4E1 ) of the fourth thermocouple series circuit ( S4 ) and the second thermocouple ( S4E2 ) of the fourth thermocouple series circuit ( S4 ) and the third thermocouple ( S4E3 ) of the fourth thermocouple series circuit ( S4 ) and the fourth thermocouple ( S4E4 ) of the fourth thermocouple series circuit ( S4 ) and the fifth thermocouple ( S4E5 ) of the fourth thermocouple series circuit ( S4 ) and the sixth thermocouple ( S4E6 ) of the fourth thermocouple series circuit ( S4 ) and the seventh thermocouple ( S4E7 ) of the fourth thermocouple series circuit ( S4 ) and the eighth thermocouple ( S4E8 ) of the fourth thermocouple series circuit ( S4 ) form a closed border of the area in which the third thermocouple series circuit ( S3 ) is located.

In the improved layout, areas of the same doping type lie next to one another.

The first thermocouple ( S1E1 ) the first thermocouple series circuit ( S1 ) and the first thermocouple ( S2E1 ) of the second thermocouple series circuit ( S2 ) and the first thermocouple ( S3E1 ) the third thermocouple series circuit ( S3 ) and the first thermocouple ( S4E1 ) of the fourth thermocouple series circuit ( S4 ) lie next to each other.

The second thermocouple ( S1E2 ) the first thermocouple series circuit ( S1 ) and the second thermocouple ( S2E2 ) of the second thermocouple series circuit ( S2 ) and the second thermocouple ( S3E2 ) the third thermocouple series circuit ( S3 ) and the second thermocouple ( S4E2 ) of the fourth thermocouple series circuit ( S4 ) lie next to each other.

The third thermocouple ( S1E3 ) the first thermocouple series circuit ( S1 ) and the third thermocouple ( S2E3 ) of the second thermocouple series circuit ( S2 ) and the third thermocouple ( S3E3 ) the third thermocouple series circuit ( S3 ) and the third thermocouple ( S4E3 ) of the fourth thermocouple series circuit ( S4 ) lie next to each other.

The fourth thermocouple ( S1E4 ) the first thermocouple series circuit ( S1 ) and the fourth thermocouple ( S2E4 ) of the second thermocouple series circuit ( S2 ) and the fourth thermocouple ( S3E4 ) the third thermocouple series circuit ( S3 ) and the fourth thermocouple ( S4E4 ) of the fourth thermocouple series circuit ( S4 ) lie next to each other.

The fifth thermocouple ( S1E5 ) the first thermocouple series circuit ( S1 ) and the fifth thermocouple ( S2E5 ) of the second thermocouple series circuit ( S2 ) and the fifth thermocouple ( S3E5 ) the third thermocouple series circuit ( S3 ) and the fifth thermocouple ( S4E5 ) of the fourth thermocouple series circuit ( S4 ) lie next to each other.

The sixth thermocouple ( S1E6 ) the first thermocouple series circuit ( S1 ) and the sixth thermocouple ( S2E6 ) of the second thermocouple series circuit ( S2 ) and the sixth thermocouple ( S3E6 ) the third thermocouple series circuit ( S3 ) and the sixth thermocouple ( S4E6 ) of the fourth thermocouple series circuit ( S4 ) lie next to each other.

The seventh thermocouple ( S1E7 ) the first thermocouple series circuit ( S1 ) and the seventh thermocouple ( S2E7 ) of the second thermocouple series circuit ( S2 ) and the seventh thermocouple ( S3E7 ) the third thermocouple series circuit ( S3 ) and the seventh thermocouple ( S4E7 ) of the fourth thermocouple series circuit ( S4 ) lie next to each other.

The eighth thermocouple ( S1E8 ) the first thermocouple series circuit ( S1 ) and the eighth thermocouple ( S2E8 ) of the second thermocouple series circuit ( S2 ) and the eighth thermocouple ( S3E8 ) the third thermocouple series circuit ( S3 ) and the eighth thermocouple ( S4E8 ) of the fourth thermocouple series circuit ( S4 ) lie next to each other.

Figure 11

11 shows an example of a possible structure for a proposed test structure for up to two proposed thermopiles by comparing the temperature determined by the thermopile to be tested with the temperature determined by a further different thermo-sensitive sensor structure. The individual elements of the test structure are highlighted by ellipses with a dashed border for faster understanding.

Above a sixth membrane ( MEM6 ) there is a first resistance ( H1W1 ) a first heating element ( H1 ). The sixth membrane ( MEM6 ) is made of a dielectric material, for example an oxide or a nitride. The sixth membrane ( MEM6 ) can contain absorbers and / or absorber layers for infrared radiation. The sixth membrane ( MEM6 ) is thermally isolated from the underlying substrate. The first resistance ( H1W1 ) of the first heating element ( H1 ) is made of doped or undoped polysilicon and has an electrical resistance of the order of 2.5 Ω / cm ² .

The first resistance ( H1W1 ) of the first heating element ( H1 ) is through a first silicidation ( H1S1 ) of the first heating element ( H1 ) with a first connection pad ( H1P1 ) of the first heating element ( H1 ) electrically connected. The first resistance ( H1W1 ) of the first heating element ( H1 ) is through a second silicidation ( H1S2 ) of the first heating element ( H1 ) with a second connection pad ( H1P2 ) of the first heating element ( H1 ) electrically connected. The first connection pad ( H1P1 ) of the first heating element ( H1 ) and the second connection pad ( H1P2 ) of the first heating element ( H1 ) are not located above the thermally insulated sixth membrane ( MEM6 ). The first connection pad ( H1P1 ) of the first heating element ( H1 ) and the second connection pad ( H1P2 ) of the first heating element ( H1 ) are electrically connected to a voltage source or to other electronic components.

Above the sixth membrane ( MEM6 ) there is a first thermopile (TP1). The first thermopile (TP1) is structured like the one in 9 and in 8th shown thermopile. The structure of the first thermopile (TP1) is therefore not explained in more detail here. The first thermopile (TP1) is electrically connected to a first connection pad ( TP1P1 ) of the first thermopile (TP1). The compound is made of silicide. The first thermopile (TP1) is electrically connected to a second connection pad ( TP1P2 ) of the first thermopile (TP1). The compound is made of silicide. The first connection pad ( TP1P1 ) of the first thermopile (TP1) and the second connection pad ( TP1P2 ) of the first thermopile (TP1) are not above the thermally isolated sixth membrane ( MEM6 ). The first connection pad ( TP1P1 ) of the first thermopile (TP1) and the second connection pad ( TP1P2 ) of the first thermopile (TP1) can be electrically connected to a voltmeter or to other electronic components. Between the first connection pad ( TP1P1 ) of the first thermopile (TP1) and the second connection pad ( TP1P2 ) of the first thermopile (TP1) can have a first voltage ( UTP1 ) issue.

In 11 is the first thermopile (TP1) on the right side of the first resistor ( H1W1 ) of the first heating element ( H1 ) and shown rotated by 90 ° to this.

Above the sixth membrane ( MEM6 ) there is a second thermopile ( TP2 ). The second thermopile ( TP2 ) is structured like that in 9 and in 8th shown thermopile. The structure of the second thermopile ( TP2 ) is therefore not explained in more detail here. The second thermopile ( TP2 ) is electrical with a first connection pad ( TP2P1 ) of the second thermopile ( TP2 ) connected. The compound is made of silicide. The second thermopile ( TP2 ) is electrical with a second connection pad ( TP2P2 ) of the second thermopile ( TP2 ) connected. The compound is made of silicide. The first connection pad ( TP2P1 ) of the second thermopile ( TP2 ) and the second connection pad ( TP2P2 ) of the second thermopile ( TP2 ) are not above the thermally insulated sixth membrane ( MEM6 ). The first connection pad ( TP2P1 ) of the second thermopile ( TP2 ) and the second connection pad ( TP2P2 ) of the second thermopile ( TP2 ) can be electrically connected to a voltmeter or to other electronic components. Between the first connection pad ( TP2P1 ) of the second thermopile ( TP2 ) and the second connection pad ( TP2P2 ) of the second thermopile ( TP2 ) a second voltage ( UTP2 ) issue.

In 11 is the second thermopile ( TP2 ) exemplarily on the left side of the first resistor ( H1W1 ) of the first heating element ( H1 ) and the first thermopile (TP1) drawn opposite.

The proposed test structure includes a further different thermo-sensitive sensor structure for determining the temperature caused by the first heating element ( H1 ) set temperature. A series connection of four diodes is used for this purpose.

Above the sixth membrane ( MEM6 ) is a first control element ( K1 ). The first control element ( K1 ) comprises a series connection of a first diode ( K1D1 ) of the first control element ( K1 ) and a second diode ( K1D2 ) of the first control element ( K1 ) and a third diode ( K1D3 ) of the first control element ( K1 ) and a fourth diode ( K1D4 ) of the first control element ( K1 ).

The first diode ( K1D1 ) of the first control element ( K1 ) and the second diode ( K1D2 ) of the first control element ( K1 ) and the third diode ( K1D3 ) of the first control element ( K1 ) and the fourth diode ( K1D4 ) of the first control element ( K1 ) are pn diodes or pin diodes made of polysilicon.

The first diode ( K1D1 ) of the first control element ( K1 ) is through a first silicidation ( K1S1 ) of the first control element ( K1 ) electrical with a first connection pad ( K1P1 ) of the first control element ( K1 ) connected. The fourth diode ( K1D4 ) of the first control element ( K1 ) is through a second silicidation ( K1S2 ) of the first control element ( K1 ) electrically with a second connection pad ( K1P2 ) of the first control element ( K1 ) connected.

The first connection pad ( K1P1 ) of the first control element ( K1 ) and the second connection pad ( K1P2 ) first control element ( K1 ) can be electrically connected to a voltmeter or to other electronic components. Between the first connection pad ( K1P1 ) of the first control element ( K1 ) and the second connection pad ( K1P2 ) first control element ( K1 ) a third voltage ( UK ) issue.

The first control element ( K1 ) is in 11 the first resistance ( H1W1 ) of the first heating element ( H1 ) shown opposite. However, it would also be a different positioning of the first control element ( K1 ) and the first thermopile (TP1) and the first resistor ( H1W1 ) of the first heating element ( H1 ) and the second thermopile ( TP2 ) possible relative to each other.

Figure 12

12th shows a state of the art ( SdT ) corresponding Halios device. A proposed thermopile can be used here as a receiver. A Halios system consists of at least one in 12th Halios device shown.

An infrared LED is used as a transmitter ( H ) is used. The transmitter ( H ) emits an optical transmission signal ( OS1 ). A broadcast signal ( S5 ) is generated by a generator ( G ) generated. The broadcast signal ( S5 ) modulates the amplitude of the transmitter ( H ) and thus the amplitude of the optical transmission signal ( OS1 ). The optical transmission signal ( OS1 ) is applied to an object to be detected ( O ) reflected and transmitted. A reflected optical transmission signal ( OS3 ) is received from a recipient ( D. ) received. Recipient ( D. ) can include at least one proposed thermopile. Recipient ( D. ) converts the reflected optical transmission signal ( OS3 ) into a received signal ( S0 ) around. The received signal ( S0 ) is supplied by a preamplifier ( V ) to an amplified received signal ( S01 ) reinforced. The amplified received signal ( S01 ) and the transmission signal ( S5 ) are used by a first multiplier ( MP1 ) to a multiplied received signal ( S9 ) multiplied. The multiplied received signal ( S9 ) becomes a filter output signal ( S10 ) filtered. The filter (F) can be a low-pass or band-pass filter. The filter output signal ( S10 ) is supported by a post-amplifier ( VN ) to an amplified filter output signal ( S14 ) reinforced. The amplified output signal ( S14 ) can be tapped on the device shown. The amplified filter output signal ( S14 ) at a third multiplier ( MP3 ) with the inverted transmission signal ( S5 ) multiplied to a compensation feed signal ( S6 ). The broadcast signal ( S5 ) is obtained by multiplying by "-1" at a second multiplier ( MP2 ) inverted.

The compensation pre-feed signal ( S6 ) is connected to a totalizer ( A. ) with an offset ( B. ) to a compensation feed signal ( S7 ) summed up. The addition with the offset ( B. ) guarantees a positive range of values for the compensation signal ( S7 ). The compensation feed signal ( S7 ) controls a compensation transmitter ( K ) at. The compensation transmitter ( K ) is an infrared LED. The compensation transmitter ( K ) emits an optical compensation signal ( OS2 ). The optical compensation signal ( OS2 ) is also sent by the recipient ( D. ) received and with the reflected optical transmission signal ( OS3 ) superimposed.

glossary

Infrared - Wikipedia defines infrared radiation as "... light with a wavelength between 780 nm and 1 mm ... This corresponds to a frequency range from 300 GHz to 400 THz."

Metallic - For the purposes of this disclosure, a substance is referred to as metallic in which valence and conduction bands overlap in at least one direction of the reciprocal lattice at room temperature.

Non-metallic - Non-metallic within the meaning of this disclosure is a substance that does not meet the definition of "metallic" given here, i.e. in which the valence and conduction bands do not overlap at room temperature. The non-metallic nature of a material can in particular be demonstrated by the fact that the electrical conductivity of the material increases as the temperature rises.

Free of metal layers - In the sense of this disclosure, metal layer-free as a property for a device or a device part means that this device or this device part is not metallic, that is, has no metallic layers, but only non-metallic layers.

Poor thermal conductivity - in the sense of this disclosure, a poor thermal conductivity of a material is characterized in that the thermal conductivity of the thermally poorly conductive material by a factor of 1 / N with N> 3 and / or N> 10 and / or N> 100 and / or N> 103 and / or N> 104 and / or N> 105 is less than the thermal conductivity of the substrate.

Heavily n-doped - Wikipedia defines heavily n-doped in silicon as a ratio of 1 donor / 10 ⁴ atoms.

Heavily p-doped - Wikipedia defines heavily p-doped in silicon as a ratio of 1 acceptor / 10 ⁴ atoms.

Thermal effect - The thermal effect is understood to be the change in temperature. The same thermal effect on two functional elements exists when the difference in temperature change is less than 20 ° C and / or better than 10 ° C and / or better than 5 ° C and / or better than 2 ° C and / or better less than 1 ° C and / or better less than 0.5 ° C and / or better less than 0.2 ° C and / or better less than 0.1 ° C.

List of reference symbols

A.

Totalizer;

B.

positive offset;

BG1

Width ( BG1 ) of the first trench ( G1 );

BG2

Width ( BG2 ) of the second trench ( G2 );

BG3

Width ( BG3 ) of the third trench ( G3 );

BG4

Width ( BG4 ) of the fourth trench ( G4 );

BG5

Width ( BG5 ) of the fifth trench ( G5 );

BG6

Width ( BG6 ) of the sixth trench ( G6 );

BG7

Width ( BG7 ) of the seventh trench ( G7 );

BG8

Width ( BG8 ) of the eighth trench ( G8 );

BG9

Width ( BG9 ) of the ninth trench ( G9 );

BG10

Width ( BG10 ) of the tenth trench ( G10 );

C1

first cavity;

C2

second cavity;

C3

third cavity;

C4

fourth cavity;

C5

fifth cavity;

D.

Receiver;

d1

first distance;

d2

second distance;

d3

third distance;

d4

fourth distance;

d5

fifth distance;

d6

sixth distance;

d7

seventh distance;

d8

eighth distance;

d9

ninth distance;

d10

tenth distance;

d11

eleventh distance;

d12

twelfth distance;

d13

thirteenth distance;

d14

fourteenth distance;

d15

fifteenth distance;

d16

sixteenth distance;

d17

seventeenth distance;

d18

eighteenth distance;

d19

nineteenth distance;

d20

twentieth distance;

G

Generator;

G1

first ditch;

G2

second trench;

G3

third trench;

G4

fourth trench;

G5

fifth trench;

G6

sixth trench;

G7

seventh trench;

G8

eighth trench;

G9

ninth trench;

G10

tenth ditch;

H

Channel;

H1

first heating element;

H1P1

first connection pad ( H1P1 ) of the first heating element ( H1 );

H1P2

second connection pad ( H1P2 ) of the first heating element ( H1 );

H1S1

first silicidation ( H1S1 ) of the first heating element ( H1 );

H1S2

second silicidation ( H1S2 ) of the first heating element ( H1 );

H1W1

first resistance ( H1W1 ) of the first heating element ( H1 );

HG1

Height ( HG1 ) of the first trench ( G1 );

HG2

Height ( HG2 ) of the second trench ( G2 );

HG3

Height ( HG3 ) of the third trench ( G3 );

HG4

Height ( HG4 ) of the fourth trench ( G4 );

HG5

Height ( HG5 ) of the fifth trench ( G5 );

HG6

Height ( HG6 ) of the sixth trench ( G6 );

HG7

Height ( HG7 ) of the seventh trench ( G7 );

HG8

Height ( HG8 ) of the eighth trench ( G8 );

HG9

Height ( HG9 ) of the ninth trench ( G9 );

HG10

Height ( HG10 ) of the tenth trench ( G10 );

HSF1

first rear side surface;

HSF2

second rear side surface;

HSF3

third rear side surface;

HSF4

fourth rear side surface;

HSF5

fifth rear side surface;

I1

first insulation layer;

I2

second insulation layer;

I3

third insulation layer;

I4

fourth insulation layer;

I5

fifth insulation layer;

I6

sixth insulation layer;

I7

seventh insulation layer;

I8

eighth layer of insulation;

I9

ninth insulation layer;

110

tenth insulation layer;

K

Compensation transmitter;

K1

first control element;

K1D1

first diode ( K1D1 ) of the first control element ( K1 );

K1D2

second diode ( K1D2 ) of the first control element ( K1 );

K1D3

third diode ( K1D3 ) of the first control element ( K1 );

K1D4

fourth diode ( K1D4 ) of the first control element ( K1 );

K1P1

first connection pad ( K1P1 ) of the first control element ( K1 );

K1P2

second connection pad ( K1P2 ) of the first control element ( K1 );

K1S1

first silicidation ( K1S1 ) of the first control element ( K1 );

K1S2

second silicidation ( K1S2 ) of the first control element ( K1 );

LG1

Length ( LG1 ) of the first trench ( G1 );

LG2

Length ( LG2 ) of the second trench ( G2 );

LG3

Length ( LG3 ) of the third trench ( G3 );

LG4

Length ( LG4 ) of the fourth trench ( G4 );

LG5

Length ( LG5 ) of the fifth trench ( G5 );

LG6

Length ( LG6 ) of the sixth trench ( G6 );

LG7

Length ( LG7 ) of the seventh trench ( G7 );

LG8

Length ( LG8 ) of the eighth trench ( G8 );

LG9

Length ( LG9 ) of the ninth trench ( G9 );

LG10

Length ( LG10 ) of the tenth trench ( G10 );

SPF1

first left side surface;

SPF2

second left side surface;

SPF3

third left side surface;

SPF4

fourth left side surface;

SPF5

fifth left side surface;

M1

first metallic connection;

M2

second metallic connection;

M3

third metallic connection;

M4

fourth metallic connection;

MP1

first multiplier;

MP2

second multiplier;

MP3

third multiplier;

MEM1

first membrane;

MEM2

second membrane;

MEM3

third membrane;

MEM4

fourth membrane;

MEM5

fifth membrane;

MEM6

sixth membrane;

O

object to be detected;

OS1

optical transmission signal;

OS2

optical compensation transmit signal;

OS3

reflected optical transmission signal;

P1

first connection pad;

P2

second connection pad;

P3

third connection pad;

P4

fourth connection pad;

PS1

first polysilicon layer;

RSF1

first right side surface;

RSF2

second right side surface;

RSF3

third right side surface;

RSF4

fourth right side surface;

RSF5

fifth right side surface;

S0

Received signal;

S01

amplified received signal;

S1

first thermocouple series connection;

S1E1

first thermocouple ( S1E1 ) the first thermocouple series circuit ( S1 );

S1E2

second thermocouple ( S1E2 ) the first thermocouple series circuit ( S1 );

S1E3

third thermocouple ( S1E3 ) the first thermocouple series circuit ( S1 );

S1E4

fourth thermocouple ( S1E4 ) the first thermocouple series circuit ( S1 );

S1E5

fifth thermocouple ( S1E5 ) the first thermocouple series circuit ( S1 );

S1E6

sixth thermocouple ( S1E6 ) the first thermocouple series circuit ( S1 );

S1E7

seventh thermocouple ( S1E7 ) the first thermocouple series circuit ( S1 );

S1E8

eighth thermocouple ( S1E8 ) the first thermocouple series circuit ( S1 );

S1P1

first connection pad ( S1P1 ) the first thermocouple series circuit ( S1 );

S1S1

first silicidation ( S1S1 ) the first thermocouple series circuit ( S1 );

S1S2

second silicidation ( S1S2 ) the first thermocouple series circuit ( S1 );

S1S3

third silicidation ( S1S3 ) the first thermocouple series circuit ( S1 );

S1S4

fourth silicidation ( S1S4 ) the first thermocouple series circuit ( S1 );

S1S5

fifth silicidation ( S1S5 ) the first thermocouple series circuit ( S1 );

S1S6

sixth silicidation ( S1S6 ) the first thermocouple series circuit ( S1 );

S1S7

seventh silicidation ( S1S7 ) the first thermocouple series circuit ( S1 );

S1S8

eighth silicidation ( S1S8 ) the first thermocouple series circuit ( S1 );

S2

second thermocouple series circuit;

S2E1

first thermocouple ( S2E1 ) of the second thermocouple series circuit ( S2 );

S2E2

second thermocouple ( S2E2 ) of the second thermocouple series circuit ( S2 );

S2E3

third thermocouple ( S2E3 ) of the second thermocouple series circuit ( S2 );

S2E4

fourth thermocouple ( S2E4 ) of the second thermocouple series circuit ( S2 );

S2E5

fifth thermocouple ( S2E5 ) of the second thermocouple series circuit ( S2 );

S2E6

sixth thermocouple ( S2E6 ) of the second thermocouple series circuit ( S2 );

S2E7

seventh thermocouple ( S2E7 ) of the second thermocouple series circuit ( S2 );

S2E8

eighth thermocouple ( S2E8 ) of the second thermocouple series circuit ( S2 );

S2S1

first silicidation ( S2S1 ) of the second thermocouple series circuit ( S2 );

S2S2

second silicidation ( S2S2 ) of the second thermocouple series circuit ( S2 );

S2S3

third silicidation ( S2S3 ) of the second thermocouple series circuit ( S2 );

S2S4

fourth silicidation ( S2S4 ) of the second thermocouple series circuit ( S2 );

S2S5

fifth silicidation ( S2S5 ) of the second thermocouple series circuit ( S2 );

S2S6

sixth silicidation ( S2S6 ) of the second thermocouple series circuit ( S2 );

S2S7

seventh silicidation ( S2S7 ) of the second thermocouple series circuit ( S2 );

S2S8

eighth silicidation ( S2S8 ) of the second thermocouple series circuit ( S2 );

S3

third thermocouple series circuit;

S3E1

first thermocouple ( S3E1 ) the third thermocouple series circuit ( S3 );

S3E2

second thermocouple ( S3E2 ) the third thermocouple series circuit ( S3 );

S3E3

third thermocouple ( S3E3 ) the third thermocouple series circuit ( S3 );

S3E4

fourth thermocouple ( S3E4 ) the third thermocouple series circuit ( S3 );

S3E5

fifth thermocouple ( S3E5 ) the third thermocouple series circuit ( S3 );

S3E6

sixth thermocouple ( S3E6 ) the third thermocouple series circuit ( S3 );

S3E7

seventh thermocouple ( S3E7 ) the third thermocouple series circuit ( S3 );

S3E8

eighth thermocouple ( S3E8 ) the third thermocouple series circuit ( S3 );

S3S1

first silicidation ( S3S1 ) the third thermocouple series circuit ( S3 );

S3S2

second silicidation ( S3S2 ) the third thermocouple series circuit ( S3 );

S3S3

third silicidation ( S3S3 ) the third thermocouple series circuit ( S3 );

S3S4

fourth silicidation ( S3S4 ) the third thermocouple series circuit ( S3 );

S3S5

fifth silicidation ( S3S5 ) the third thermocouple series circuit ( S3 );

S3S6

sixth silicidation ( S3S6 ) the third thermocouple series circuit ( S3 );

S3S7

seventh silicidation ( S3S7 ) the third thermocouple series circuit ( S3 );

S3S8

eighth silicidation ( S3S8 ) the third thermocouple series circuit ( S3 );

S4

fourth thermocouple series circuit;

S4E1

first thermocouple ( S4E1 ) of the fourth thermocouple series circuit ( S4 );

S4E2

second thermocouple ( S4E2 ) of the fourth thermocouple series circuit ( S4 );

S4E3

third thermocouple ( S4E3 ) of the fourth thermocouple series circuit ( S4 );

S4E4

fourth thermocouple ( S4E4 ) of the fourth thermocouple series circuit ( S4 );

S4E5

fifth thermocouple ( S4E5 ) of the fourth thermocouple series circuit ( S4 );

S4E6

sixth thermocouple ( S4E6 ) of the fourth thermocouple series circuit ( S4 );

S4E7

seventh thermocouple ( S4E7 ) of the fourth thermocouple series circuit ( S4 );

S4E8

eighth thermocouple ( S4E8 ) of the fourth thermocouple series circuit ( S4 );

S4P1

first connection pad ( S4P1 ) of the fourth thermocouple series circuit ( S4 );

S4S1

first silicidation ( S4S1 ) of the fourth thermocouple series circuit ( S4 );

S4S2

second silicidation ( S4S2 ) of the fourth thermocouple series circuit ( S4 );

S4S3

third silicidation ( S4S3 ) of the fourth thermocouple series circuit ( S4 );

S4S4

fourth silicidation ( S4S4 ) of the fourth thermocouple series circuit ( S4 );

S4S5

fifth silicidation ( S4S5 ) of the fourth thermocouple series circuit ( S4 );

S4S6

sixth silicidation ( S4S6 ) of the fourth thermocouple series circuit ( S4 );

S4S7

seventh silicidation ( S4S7 ) of the fourth thermocouple series circuit ( S4 );

S4S8

eighth silicidation ( S4S8 ) of the fourth thermocouple series circuit ( S4 );

S5

Transmit signal;

S6

Compensation pre-feed signal;

S7

Compensation feed signal;

S9

multiplied transmission signal;

S10

Filter output signal;

S14

amplified filter output signal;

SdT

State of the art;

SI1

first silicidation;

SI2

second silicidation;

SI3

third silicidation;

SI4

fourth silicidation;

SI5

fifth silicidation;

SI6

sixth silicidation;

SI7

seventh silicidation;

SI8

eighth silicidation;

SI9

ninth silicidation;

SI10

tenth silicidation;

SI11

eleventh silicidation;

SI12

twelfth silicidation;

SI13

thirteenth silicidation;

SI14

fourteenth silicidation;

SI15

fifteenth silicidation;

SI16

sixteenth silicidation;

SI17

seventeenth silicidation;

SI18

eighteenth silicidation;

SI19

nineteenth silicidation;

SI20

twentieth silicidation;

SI21

twenty-first silicidation;

SUB1

first substrate;

SUB2

second substrate;

SUB3

third substrate;

SUB4

fourth substrate;

SUB5

fifth substrate;

TC1

first thermocouple;

TC11

first thermocouple ( TC11 ) of the first thermocouple ( TC1 );

TC12

second thermocouple ( TC12 ) of the first thermocouple ( TC1 );

TC2

second thermocouple;

TC21

first thermocouple ( TC21 ) of the second thermocouple ( TC2 );

TC22

second thermocouple ( TC22 ) of the second thermocouple ( TC2 );

TC3

third thermocouple;

TC31

first thermocouple ( TC31 ) of the third thermocouple ( TC3 );

TC32

second thermocouple ( TC32 ) of the third thermocouple ( TC3 );

TC4

fourth thermocouple;

TC41

first thermocouple ( TC41 ) of the fourth thermocouple ( TC4 );

T42

second thermocouple (TC42) of the fourth thermocouple ( TC4 );

TC5

fifth thermocouple;

TC51

first thermocouple ( TC51 ) of the fifth thermocouple ( TC5 );

TC52

second thermocouple ( TC52 ) of the fifth thermocouple ( TC5 );

TE1

first thermocouple;

TE2

second thermocouple;

TE3

third thermocouple;

TE4

fourth thermocouple;

TE5

fifth thermocouple;

TE6

sixth thermocouple;

TE7

seventh thermocouple;

TE8

eighth thermocouple;

TE9

ninth thermocouple;

TE10

tenth thermocouple;

TE11

eleventh thermocouple;

TE12

twelfth thermocouple;

TE13

thirteenth thermocouple;

TE14

fourteenth thermocouple;

TE15

fifteenth thermocouple;

TE16

sixteenth thermocouple;

TE17

seventeenth thermocouple;

TE18

eighteenth thermocouple;

TE19

nineteenth thermocouple;

TE20

twentieth thermocouple;

TE21

twenty-first thermocouple;

TE22

twenty-second thermocouple TP1 first thermopile (TP1);

TP1P1

first connection pad ( TP1P1 ) the first thermopile (TP1);

TP1P2

second connection pad ( TP1P2 ) the first thermopile (TP1);

TP2

second thermopile ( TP2 );

TP2P1

first connection pad ( TP2P1 ) of the second thermopile ( TP2 );

TP2P2

second connection pad ( TP2P2 ) of the second thermopile ( TP2 );

UT

temperature dependent voltage;

UH

adjustable tension;

UK

third tension;

UTP1

first tension;

UTP2

second voltage;

V

Preamplifier;

VN

Post-amplifier;

W1

first tub;

List of scriptures cited

• DE 10 2014 013 482 B4
• DE 10 2015 015 389 A1
• DE 10 2017 100 308 B3
• EP 1913420 B1
• EP 2,817,657 B,
• DE 10 001 955 A1 ,
• DE 10 001 943 C1 ,
• DE 10 346 741 B3 ,
• EP 2 936 201 A1 ,
• WO 2007 012 502 A1 ,
• EP 1671160 A1 ,
• EP 1410 507 A1 ,
• EP 1435 509A1 ,
• EP 1 269 929 A1 ,
• EP 1 258 084 A ,
• EP 1480 015A1 ,
• EP 1579 307 B1 ,
• DE 10 2005 045 993 B4 ,
• EP 0 706 648 A1 ,
• EP 2 016 480 A2 ,
• EP 2 783 232 B1 ,
• DE 11 2013 002 097 A5 ,
• EP 2 679 982 A1 ,
• DE 10 2013 013 664 B3 ,
• DE 10 2012 010 627 A1 ,
• DE 10 2013 019 660 A1 ,
• DE 10 2013 000 376 A1 ,
• EP 2 405 283 B1 ,
• DE 10 2015 002 271 A1 ,
• DE 10 2015 006 174 B3 ,
• DE 10 2014 019 172 A1 ,
• DE 10 2015 015 389 A1 ,
• DE 10 2017 100 308 B3 ,
• DE 10 2017 100 306 A1

QUOTES INCLUDED IN THE DESCRIPTION

This list of the documents listed by the applicant was generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

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Claims (13)

Apparatus for testing at least one silicided thermopile, comprising a first thermopile (TP1) and a second thermopile (TP2) and a first heating element (H1) and wherein the first thermopile (TP1) comprises at least one thermocouple and wherein the first thermopile (TP1) is free of metal layers and electrical connections being implemented by siliciding in the first thermopile (TP1) and wherein the first thermopile (TP1) is electrically connected to a first connection pad (TP1P1) of the first thermopile (TP1) by siliciding, and wherein the first thermopile (TP1) is electrically connected to a second connection pad (TP1P2) of the first thermopile (TP1) by siliciding, and wherein the second thermopile (TP2) comprises at least one thermocouple and wherein the second thermopile (TP2) is free of metal layers and electrical connections being implemented by siliciding in the second thermopile (TP2) and wherein the second thermopile (TP2) is electrically connected by siliciding to a first connection pad (TP2P1) of the second thermopile (TP2) and wherein the second thermopile (TP2) is electrically connected to a second connection pad (TP2P2) of the second thermopile (TP2) by siliciding, and wherein the first heating element (H1) comprises a first resistor (H1W1) of the first heating element (H1) made of polysilicon, wherein the first resistor (H1W1) of the first heating element (H1) is electrically connected to a first connection pad (H1P1) of the first heating element (H1) by a first silicidation (H1S1) of the first heating element (H1) and wherein the first resistor (H1W1) of the first heating element (H1) is electrically connected to a second connection pad (H1P2) of the first heating element (H1) by a second silicidation (H1S2) of the first heating element (H1) and wherein an adjustable voltage (UH) can be applied between the first connection pad (H1P1) of the first heating element (H1) and the second connection pad (H1P2) of the first heating element (H1). Apparatus for testing at least one silicided thermopile, comprising a first thermopile (TP1) and a second thermopile (TP2) and a first control element (K1), wherein the first thermopile (TP1) comprises at least one thermocouple and wherein the first thermopile (TP1) is free of metal layers and wherein in the first thermopile (TP1) electrical connections are realized by siliciding and wherein the first thermopile (TP1) is electrically connected to a first connection pad (TP1P1) of the first thermopile (TP1) by siliciding and wherein the first thermopile (TP1) is electrically connected to a second connection pad (TP1P2) of the first thermopile (TP1) by siliciding, and wherein the second thermopile (TP2) comprises at least one thermocouple and wherein the second thermopile (TP2) is free of metal layers and electrical connections being implemented by siliciding in the second thermopile (TP2) and wherein the second thermopile (TP2) is electrically connected by siliciding to a first connection pad (TP2P1) of the second thermopile (TP2) and wherein the second thermopile (TP2) is electrically connected to a second connection pad (TP2P2) of the second thermopile (TP2) by siliciding, and wherein the first control element (K1) is preferably a series connection of a first diode (K1D1) of the first control element (K1) and a second diode (K1D2) of the first control element (K1) and a third diode (K1D3) of the first control element (K1) and one comprises fourth diode (K1D4) of the first control element (K1) and whereby the first diode (K1D1) of the first control element (K1) and the second diode (K1D2) of the first control element (K1) and the third diode (K1D3) of the first control element (K1) and the fourth diode (K1D4) of the first control element ( K1) pn diodes or pin diodes made of polysilicon and wherein the first diode (K1D1) of the first control element (K1) is electrically connected to a first connection pad (K1P1) of the first control element (K1) by a first silicidation (K1S1) of the first control element (K1) and wherein the fourth diode (K1D4) of the first control element (K1) is electrically connected to a second connection pad (K1P2) of the first control element (K1) by a second silicidation (K1S2) of the first control element (K1). Device for testing at least one silicided thermopile, characterized in that it is a device according to Claim 1 is and that they are a device according to Claim 2 is. Device for testing at least one silicided thermopile, comprising a first thermopile (TP1) and a first heating element (H1) and wherein the first thermopile (TP1) comprises at least one thermocouple and wherein the first thermopile (TP1) is free of metal layers and wherein electrical connections are realized in the first thermopile (TP1) by siliciding and wherein the first thermopile (TP1) is electrically connected by siliciding to a first connection pad (TP1P1) of the first thermopile (TP1) and wherein the first thermopile (TP1) is electrically connected to a second connection pad (TP1P2) of the first thermopile (TP1) by siliciding, and wherein the first heating element (H1) comprises a first resistor (H1W1) of the first heating element (H1) made of polysilicon, wherein the first resistor (H1W1) of the first heating element (H1) is electrically connected by a first silicidation (H1S1) of the first heating element (H1) to a first connection pad (H1P1) of the first heating element (H1) and wherein the first resistor (H1W1) of the first heating element (H1) by a second silicidation (H1S2) of the first heating element (H1) with a second connection pad (H1P2) of the first heating element (H1) elek is electrically connected and an adjustable voltage (UH) is applied between the first connection pad (H1P1) of the first heating element (H1) and the second connection pad (H1P2) of the first heating element (H1). Apparatus for testing at least one silicided thermopile, comprising a first thermopile (TP1) and a first control element (K1), wherein the first thermopile (TP1) comprises at least one thermocouple and wherein the first thermopile (TP1) is free of metal layers and electrical connections being implemented by siliciding in the first thermopile (TP1) and wherein the first thermopile (TP1) is electrically connected to a first connection pad (TP1P1) of the first thermopile (TP1) by siliciding, and wherein the first thermopile (TP1) is electrically connected to a second connection pad (TP1P2) of the first thermopile (TP1) by siliciding, and wherein the first control element (K1) is preferably a series connection of a first diode (K1D1) of the first control element (K1) and a second diode (K1D2) of the first control element (K1) and a third diode (K1D3) of the first control element (K1) and one comprises fourth diode (K1D4) of the first control element (K1) and whereby the first diode (K1D1) of the first control element (K1) and the second diode (K1D2) of the first control element (K1) and the third diode (K1D3) of the first control element (K1) and the fourth diode (K1D4) of the first control element ( K1) pn diodes or pin diodes made of polysilicon and wherein the first diode (K1D1) of the first control element (K1) is electrically connected to a first connection pad (K1P1) of the first control element (K1) by a first silicidation (K1S1) of the first control element (K1) and wherein the fourth diode (K1D4) of the first control element (K1) is electrically connected to a second connection pad (K1P2) of the first control element (K1) by a second silicidation (K1S2) of the first control element (K1). Device for testing at least one silicided thermopile, characterized in that it is a device according to Claim 4 is and that they are a device according to Claim 5 is. Device according to one or more of the preceding Claims 1 to 3 , the first thermopile (TP1) and the second thermopile (TP2) being connected in series with one another to form a thermopile. Device according to one or more of the preceding Claims 1 to 3 , wherein the first thermopile (TP1) and the second thermopile (TP2) are arranged opposite one another. Device according to one or more of the preceding Claims 3 or 6 , wherein the first heating element (H1) and the first control element (K1) are arranged opposite one another. Device according to Claim 3 wherein the straight line on which the first thermopile (TP1) and the second thermopile (TP2) are arranged intersects the straight line on which the first heating element (H1) and the first control element (K1) are arranged orthogonally. Method for testing at least one thermopile with a device Claim 3 , the temperature increase at the first resistor (H1W1) of the first heating element (H1) caused by thermal power loss in the first resistor (H1W1) of the first heating element (H1) by applying the adjustable voltage (UH) between the first connection pad (H1P1) of the first heating element (H1) and the second connection pad (H1P2) of the first heating element (H1) is set and wherein between the first connection pad (TP1P1) of the first thermopile (TP1) and the second connection pad (TP1P2) of the first thermopile (TP1) a first voltage ( UTP1) is measured and a second voltage (UTP2) is measured between the first connection pad (TP2P1) of the second thermopile (TP2) and the second connection pad (TP2P2) of the second thermopile (TP2), and the first voltage (UTP1) depends on the Temperature increase at the first resistor (H1W1) of the first heating element (H1) is dependent and wherein the second voltage (UTP2) is dependent on the temperature increase at the first resistor (H1W1) of the first heating element (H1) and wherein the third voltage (UK) is dependent on the temperature increase at the first resistor (H1W1) of the first heating element (H1) and wherein a third voltage (UK) is measured between the first connection pad (K1P1) of the first control element (K1) and the second connection pad (K1P2) of the first control element (K1) and / or the functionality of the first thermopile (TP1) and the second Thermopiles (TP2) is checked by comparing the first voltage (UTP1) and the second voltage (UTP2) with the third voltage (UK). Method for testing at least one thermopile with a device Claim 6 , the temperature increase at the first resistor (H1W1) of the first heating element (H1) caused by thermal power loss in the first resistor (H1W1) of the first heating element (H1) by applying the adjustable voltage (UH) between the first connection pad (H1P1) of the first heating element (H1) and the second connection pad (H1P2) of the first heating element (H1) is set and wherein between the first connection pad (TP1P1) of the first thermopile (TP1) and the second connection pad (TP1P2) of the first thermopile (TP1) a first voltage ( UTP1) is measured and the first voltage (UTP1) is dependent on the temperature increase at the first resistor (H1W1) of the first heating element (H1) and wherein between the first connection pad (K1P1) of the first control element (K1) and the second connection pad (K1P2 ) the first control element (K1) a third voltage (UK) is measured and / or wherein the first voltage (UTP1) and the third voltage (UK) from the temperature increase on first resistor (H1W1) of the first heating element (H1) are dependent and the functionality of the first thermopile (TP1) is checked by comparing the first voltage (UTP1) with the third voltage (UK). Method for testing at least one thermopile with a device Claim 4 , the temperature increase at the first resistor (H1W1) of the first heating element (H1) caused by thermal power loss in the first resistor (H1W1) of the first heating element (H1) by applying the adjustable voltage (UH) between the first connection pad (H1P1) of the first heating element (H1) and the second connection pad (H1P2) of the first heating element (H1) is set and wherein between the first connection pad (TP1P1) of the first thermopile (TP1) and the second connection pad (TP1P2) of the first thermopile (TP1) a first voltage ( UTP1) is measured and the first voltage (UTP1) is dependent on the temperature increase at the first resistor (H1W1) of the first heating element (H1) and the functionality of the first thermopile (TP1) by comparing the first voltage (UTP1) with a target value is checked.

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