CN220770823U - Gas pipeline - Google Patents
Gas pipeline Download PDFInfo
- Publication number
- CN220770823U CN220770823U CN202322363332.3U CN202322363332U CN220770823U CN 220770823 U CN220770823 U CN 220770823U CN 202322363332 U CN202322363332 U CN 202322363332U CN 220770823 U CN220770823 U CN 220770823U
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- Prior art keywords
- gas
- valve
- source
- air
- pressure
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 80
- 238000000034 method Methods 0.000 claims description 37
- 239000002253 acid Substances 0.000 claims description 19
- KFUSEUYYWQURPO-OWOJBTEDSA-N trans-1,2-dichloroethene Chemical group Cl\C=C\Cl KFUSEUYYWQURPO-OWOJBTEDSA-N 0.000 claims description 5
- 239000010453 quartz Substances 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 7
- 238000004200 deflagration Methods 0.000 abstract description 6
- 238000004880 explosion Methods 0.000 abstract description 5
- 239000007789 gas Substances 0.000 description 170
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 8
- 239000002912 waste gas Substances 0.000 description 8
- 239000002360 explosive Substances 0.000 description 7
- 230000003647 oxidation Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 231100000331 toxic Toxicity 0.000 description 4
- 230000002588 toxic effect Effects 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000007599 discharging Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000005922 Phosphane Substances 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000010815 organic waste Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910000064 phosphane Inorganic materials 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
Abstract
The utility model provides a gas pipeline. The gas line includes: the gas source, the reaction cavity and the pressure control pump; the air inlet of the reaction cavity is connected with the air source through a first valve, the pressure control pump is connected with the air outlet of the reaction cavity, and the air source is connected with the pressure control pump through a second valve. When the air pressure of the air source is higher than that of the reaction cavity, the first valve is closed, the second valve is opened, the air of the air source is communicated with the pressure control pump through the second valve, so that the air pressure of the air source is consistent with that in the reaction cavity, a great amount of air is prevented from instantaneously entering the reaction cavity due to overlarge air pressure difference between the air source and the reaction cavity, and deflagration is prevented when the reaction cavity is at high temperature, and quartz rupture of the reaction cavity caused by the explosion is avoided.
Description
Technical Field
The utility model relates to the field of semiconductors, in particular to a gas pipeline.
Background
Trans-dichloroethylene (DCE for short, molecular formula C) 2 H 2 Cl 2 ) The method is mainly used for accelerating the oxidization of the silicon wafer and cleaning the furnace tube in the wafer manufacturing process, and is widely applied to the integrated circuit wafer oxidization process. However, DCE is flammable, and the vapor of DCE and air can form an explosive mixture. When exposed fire and high heat energy cause combustion explosion. At present, a DCE source is usually provided by a source bottle, the pressure of the DCE source bottle is usually normal pressure, the furnace tube of the oxidation furnace is also mostly normal pressure process, but if the reaction cavity is low pressure process, when DCE gas just enters the reaction cavity, a large amount of DCE gas is instantaneously introduced into the reaction cavity due to the large pressure difference between the DCE source bottle and the reaction cavity. If the process temperature is high, DCE can deflagrate at the gas inlet of the reaction chamber, even the quartz at the gas inlet of the reaction chamber can be cracked, and the reaction chamber and products in the chamber can be damaged.
In order to reduce spare part damage and prevent product scrapping, it is highly desirable to provide an explosion-proof gas pipeline, so that explosion is not easy to occur when relatively high-pressure inflammable and explosive gas is introduced into a relatively low-pressure process cavity, production accidents are reduced, and production cost is reduced.
Disclosure of Invention
The utility model aims to solve the technical problem of providing a gas pipeline which is used for preventing the explosion when the relatively high-pressure inflammable and explosive gas is introduced into the relatively low-pressure process cavity, reducing the occurrence of production accidents and lowering the production cost.
In order to solve the above problems, the present utility model provides a gas pipeline comprising: a gas source for providing the gas required by the process; the air inlet of the reaction cavity is connected with the air source through a first valve; the pressure control pump is connected with the air outlet of the reaction cavity; the air source is further connected with the pressure control pump through a second valve.
In some embodiments, the gas source is a source of trans-dichloroethylene.
In some embodiments, the gas source is provided by a gas source bottle.
In some embodiments, the gas source is provided by a gas cabinet.
In some embodiments, the first valve and the second valve are open and closed in opposite states.
In some embodiments, the first valve and the second valve are pneumatic valves.
In some embodiments, the controlled pressure pump is coupled to an exhaust treatment device.
In some embodiments, further comprising: the acid discharge valve is connected to the air source and an external factory acid discharge system.
In some embodiments, the air pressure of the plant acid removal system is less than the air pressure of the air source.
Above-mentioned technical scheme provides a gas line, gas line includes: the gas source, the reaction cavity and the pressure control pump; the air inlet of the reaction cavity is connected with the air source through a first valve, the pressure control pump is connected with the air outlet of the reaction cavity, and the air source is further connected with the pressure control pump through a second valve. When the air pressure of the air source is higher than that of the reaction cavity, the first valve is closed, the second valve is opened, and the air of the air source is communicated with the pressure control pump through the second valve, so that the air pressure of the air source is consistent with that in the reaction cavity. And then closing the second valve, opening the first valve, and enabling the gas of the gas source to enter the reaction cavity through the first valve. The gas is prevented from instantaneously entering the reaction chamber in a large quantity due to the overlarge pressure difference between the gas source and the reaction chamber, and deflagration occurs when the high temperature of the reaction chamber is encountered, so that quartz rupture of the reaction chamber caused by the deflagration is avoided.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the utility model as claimed. Techniques, methods, and apparatus known to one of ordinary skill in the relevant art may not be discussed in detail, but should be considered part of the specification where appropriate.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present utility model, the drawings that are needed in the embodiments of the present utility model will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present utility model, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic illustration of a gas line provided by a first embodiment of the present utility model;
fig. 2 is a schematic diagram of a gas pipeline according to a second embodiment of the present utility model.
Detailed Description
The following description of the embodiments of the present utility model will be made in detail and with reference to the accompanying drawings, wherein it is apparent that the embodiments described are only some, but not all embodiments of the present utility model. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.
Fig. 1 is a schematic view of a gas pipeline according to a first embodiment of the present utility model. Referring now to fig. 1, the gas line includes: a gas source 101, a reaction chamber 102 and a pressure control pump 103. The gas source 101 is used for providing gas required by the process; the air inlet 1021 of the reaction chamber 102 is connected with the air source 101 through a first valve 105; the pressure control pump 103 is connected with the air outlet 1022 of the reaction chamber 102; the air source 101 is further connected to the pressure control pump 103 via a second valve 106.
In this embodiment, the pressure control pump 103 is directly connected to the reaction chamber 102, and is used to adjust the air pressure in the reaction chamber 102 so that the air pressure in the reaction chamber 102 is consistent with the air pressure in the pressure control pump 103.
In this embodiment, the pressure in the reaction chamber 102 is 670 Torr (Torr), and the pressure in the gas source 101 is 760 Torr (Torr). The process temperature in the reaction chamber 102 is 1150 ℃.
As described above, in this embodiment, the gas pressure in the gas source 101 is greater than the gas pressure in the reaction chamber 102, and if the process-required gas in the gas source 101 is directly introduced into the reaction chamber 102, the process-required gas in the gas source 101 instantaneously enters the reaction chamber 102 in a large amount due to the excessive pressure difference between the gas source 101 and the reaction chamber 102. In this embodiment, the gases required for the process have the characteristic of being flammable and explosive. When the gas required by the flammable and explosive process enters the gas inlet 1021 of the reaction cavity 102 from the gas source 101, the gas required by the flammable and explosive process knocks under the high temperature action of the reaction cavity 102, a large amount of high-temperature gas is generated, the gas volume in the gas inlet 1021 is rapidly increased, quartz at the gas inlet 1021 is broken, and the reaction cavity 102 is greatly damaged.
In this embodiment, the first valve 105 and the second valve 106 are opened and closed in opposite states. Specifically, based on the piping structure shown in fig. 1, the two valves operate in the following manner: (1) Closing the first valve 105, opening the second valve 106, and enabling the gas of the gas source 101 to be communicated with the pressure control pump 103 through the second valve 106; (2) The second valve 106 is closed, the first valve 105 is opened, and the gas of the gas source 101 enters the reaction chamber 102 through the first valve 105.
Specifically, the first valve 105 is closed, the second valve 106 is opened, and the gas in the gas source 101 enters the pressure control pump 103 through the second valve 106. After the gas in the gas source 101 circulates for a period of time along the gas path formed by the gas source 101, the second valve 106, and the pressure control pump 103, the gas pressure in the gas source 101 can be made to be consistent with the gas pressure in the pressure control pump 103. Since the air pressure in the reaction chamber 102 is already identical to the air pressure in the pressure control pump 103, after a while, the air pressure in the air source 101 can be made identical to the air pressure in the reaction chamber 102.
When the first valve 105 is in a closed state and the second valve 106 is in an open state for a period of time, the air pressure in the air source 101 is reduced to be consistent with the air pressure in the reaction chamber 102, then the second valve 106 is closed, the first valve 105 is opened, and the air in the air source 101 enters the reaction chamber 102 through the first valve 105. Because there is no pressure difference between the gas source 101 and the reaction chamber 102, a large amount of gas will not enter the reaction chamber 102 along the gas path formed by the gas source 101, the first valve 105, and the reaction chamber 102 in a short time. In this case, a relatively gentle flow of gas can safely enter the reaction chamber 102 through the gas inlet 1021, avoiding quartz explosion and adverse effects on the reaction chamber 102 and products inside the reaction chamber 102, and enabling the process to be safely performed.
In this embodiment, the gas source 101 is a source of trans-dichloroethylene, i.e., the gas source is a source of DCE. The DCE gas provided by the DCE source is used as a high-purity chlorine source, can react with an oxidant strongly, is mainly used for accelerating the oxidization of a silicon wafer and cleaning a furnace tube in the wafer manufacturing process, and is also widely applied to the oxidization process of an integrated circuit wafer. However, DCE gas is flammable and forms an explosive mixture with air, and burns and explodes when exposed to high heat. When the thermal oxidation process is performed, the gas pipeline shown in fig. 1 is adopted and the opening and closing states of the valves are controlled, so that deflagration at the gas inlet 1021 of the reaction cavity 102 can be avoided, and the thermal oxidation process has great effects on safe production and production cost reduction.
In this embodiment, the gas source 101 is provided by a gas source bottle. The gas source bottle has an explosion-proof function, can stabilize the gas pressure and relieve the impact force in the process, and ensures the stable gas supply and the process safety of special gas used in the semiconductor process.
In some embodiments, the Gas source 101 is provided by a Gas cabinet (Gas Cabinets). The gas holder can provide pressure control and flow monitoring for the gas source 101, has the capability of replacing a gas cylinder, and is suitable for providing a gas source for characteristic gases such as toxic, inflammable, reactive, corrosive gases and the like.
In this embodiment, the first valve 105 and the second valve 106 are pneumatic valves. The pneumatic valve is a valve driven by compressed gas, and in this embodiment, the first valve 105 and the second valve 106 in the form of pneumatic valves mainly act on the gas pipeline to open and close. In some embodiments, the first valve 105 and the second valve 106 are pneumatic solenoid valves, which can adjust the flow of the gas flowing in the gas pipeline, so that the gas flowing process in the gas pipeline is more accurately controllable.
In this embodiment, the first valve 105 is a one-way valve, allowing the flow of the process-required gas from the gas source 101 to the reaction chamber 102, not allowing the reverse flow of the process-required gas; the second valve 106 is also a one-way valve allowing the flow of the process-required gas from the gas source 101 to the controlled pressure pump 103, and not allowing the reverse flow of the process-required gas. In this embodiment, the pressure control pump 103 is further connected to an exhaust gas treatment device 104. The tail gas treatment device 104 is used for removing toxic and harmful substances in the waste gas discharged from industrial production, so that the treated waste gas can reach the emission standard, and the atmospheric pollution is reduced.
Fig. 2 is a schematic diagram of a gas pipeline according to a second embodiment of the present utility model. Referring now to fig. 2, the gas line includes: a gas source 201, a reaction chamber 102 and a pressure control pump 103. The gas source 201 provides the gas required by the process; the air inlet 1021 of the reaction chamber 102 is connected with the air source 101 through a first valve 105; the pressure control pump 103 is connected with the air outlet 1022 of the reaction chamber 102; the air source 101 is connected with the pressure control pump 103 through a second valve 106. In this embodiment, the gas pipeline further comprises an acid discharge valve 207 connected to the gas source 201 and an external factory acid discharge system 208. The acid discharge valve 207 is used to control the gas communication between the gas source 201 and the plant acid discharge system 208.
In this embodiment, the air source 201 is a trans-dichloroethylene source, i.e. the air source 201 is a DCE source, and is provided by an air source bottle. The gas source 201 includes a gas inlet 2011 and a gas outlet 2012.DCE gas provided by the DCE source is input from the gas inlet 2011 of the gas source 201, and when DCE gas output is required, DCE gas is output through the gas outlet 2012 of the gas source 201.
Before the process, the two first valves 105 and the second valve 106 are operated according to the pipe structure shown in fig. 2: (1) Closing the first valve 105, opening the second valve 106, and enabling the gas of the gas source 201 to be communicated with the pressure control pump 103 through the second valve 106; (2) The second valve 106 is closed, the first valve 105 is opened, and the gas of the gas source 201 enters the reaction chamber 102 through the first valve 105.
Specifically, the first valve 105 is closed, the second valve 106 is opened, the gas in the gas source 201 is communicated with the pressure control pump 103 through the second valve 106, and after the gas in the gas source 201 circulates for a period of time along the gas paths formed by the gas source 201, the second valve 106 and the pressure control pump 103, the gas pressure in the gas source 201 can be consistent with the gas pressure in the pressure control pump 103 and the reaction chamber 102; the second valve 106 is then closed, the first valve 105 is opened, and the gas from the gas source 201 is allowed to enter the reaction chamber 102 through the first valve 105.
The above operation reduces the gas pressure in the gas source 201 to be consistent with the gas pressure in the reaction chamber 102, and a relatively gentle flow of the process-required gas can safely enter the reaction chamber 102 through the gas inlet 1021. In this embodiment, DCE gas with a relatively gentle flow rate can safely enter the reaction chamber 102 through the gas inlet 1021, so that quartz burst at the gas inlet 1021 of the reaction chamber 102 is avoided, and further, the risk of damage to the reaction chamber 102 and the risk of scrapping of products in the reaction chamber 102 are reduced, and the production cost is reduced while the process can be safely performed.
The plant acid discharging system 208 is a central processing system of a plant end. In the semiconductor process, characteristic gases (silane, arsine, phosphane, perfluorocarbon, halogen-containing gas and other toxic and high boiling point waste gases) generated in the processes of thermal oxidation, chemical vapor deposition, dry etching, ion implantation and the like are subjected to local pretreatment and then are subjected to centralized treatment by a central processing system at a factory end.
In this embodiment, the central processing system of the plant end includes an acid waste gas treatment system, an alkaline waste gas treatment system, an organic waste gas treatment system, an arsenic exhaust treatment system, and a general exhaust system, and can intensively treat characteristic gases and general gases generated in various processes. In this embodiment, the gas source 201 is a DCE source, and the DCE gas is toxic and flammable, so that the waste gas generated in the process is connected to the central processing system of the plant end for centralized treatment, i.e. the waste gas generated in the process is connected to the plant acid discharging system 208 for centralized treatment.
In this embodiment, the air pressure of the factory acid discharging system 208 is smaller than the air pressure of the air source 201. After each process procedure is finished, the acid discharge valve 207 is opened, the gas in the gas source 201 is allowed to purge the gas pipeline through the gas outlet 2012, and the purged waste gas is discharged into the factory acid discharge system 208 for centralized treatment, so as to play a role in cleaning the gas pipeline.
In this embodiment, the acid discharge valve 207 is a pneumatic switch valve and is a one-way valve, allowing only gas to flow from the process gas line to the plant acid discharge system 208, and not allowing gas to flow back from the plant acid discharge system 208 into the process gas line.
Above-mentioned technical scheme, the gas line includes: a gas source 101, a reaction chamber 102 and a pressure control pump 103. The gas source 101 is used for providing gas required by the process; the air inlet 1021 of the reaction chamber 102 is connected with the air source 101 through a first valve 105; the pressure control pump 103 is connected with the air outlet 1022 of the reaction chamber 102; the air source 101 is connected with the pressure control pump 103 through a second valve 106. When the air pressure of the air source is higher than that of the reaction cavity, the first valve is closed, the second valve is opened, and the air of the air source is communicated with the pressure control pump through the second valve, so that the air pressure of the air source is consistent with that in the reaction cavity; and then closing the second valve, opening the first valve, and enabling the gas of the gas source to enter the reaction cavity through the first valve. The gas is prevented from instantaneously entering the reaction chamber in a large quantity due to the overlarge pressure difference between the gas source and the reaction chamber, and deflagration occurs when the high temperature of the reaction chamber is encountered, so that quartz rupture of the reaction chamber caused by the deflagration is avoided.
It should be noted that in this document, relational terms such as "first" and "second" and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprise," "include," or any other variation thereof, are intended to cover a non-exclusive inclusion. In this specification, each embodiment is described in a related manner, and identical and similar parts of each embodiment are all referred to each other, and each embodiment mainly describes differences from other embodiments.
The foregoing description is only of the preferred embodiments of the present utility model and is not intended to limit the scope of the present utility model. It should be noted that modifications and adaptations to the present utility model may occur to one skilled in the art without departing from the principles of the present utility model and are intended to be comprehended within the scope of the present utility model.
Claims (9)
1. A gas line comprising:
a gas source for providing the gas required by the process;
the air inlet of the reaction cavity is connected with the air source through a first valve;
the pressure control pump is connected with the air outlet of the reaction cavity;
the air source is further connected with the pressure control pump through a second valve.
2. The gas line of claim 1, wherein the gas source is a source of trans-dichloroethylene.
3. The gas line of claim 1, wherein the gas source is provided by a gas source bottle.
4. The gas line of claim 1, wherein the gas source is provided by a gas cabinet.
5. The gas circuit of claim 1, wherein the first valve and the second valve are open and closed in opposite states.
6. The gas line of claim 1, wherein the first valve and the second valve are pneumatic valves.
7. The gas line according to claim 1, wherein the pressure control pump is connected to an exhaust gas treatment device.
8. The gas line of claim 1, further comprising:
the acid discharge valve is connected to the air source and an external factory acid discharge system.
9. The gas line of claim 8, wherein the gas pressure of the plant acid removal system is less than the gas pressure of the gas source.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202322363332.3U CN220770823U (en) | 2023-08-31 | 2023-08-31 | Gas pipeline |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202322363332.3U CN220770823U (en) | 2023-08-31 | 2023-08-31 | Gas pipeline |
Publications (1)
Publication Number | Publication Date |
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CN220770823U true CN220770823U (en) | 2024-04-12 |
Family
ID=90610222
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN202322363332.3U Active CN220770823U (en) | 2023-08-31 | 2023-08-31 | Gas pipeline |
Country Status (1)
Country | Link |
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CN (1) | CN220770823U (en) |
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2023
- 2023-08-31 CN CN202322363332.3U patent/CN220770823U/en active Active
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