CN211907417U - Semiconductor packaging piece and electronic element - Google Patents
Semiconductor packaging piece and electronic element Download PDFInfo
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- CN211907417U CN211907417U CN201922298756.XU CN201922298756U CN211907417U CN 211907417 U CN211907417 U CN 211907417U CN 201922298756 U CN201922298756 U CN 201922298756U CN 211907417 U CN211907417 U CN 211907417U
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model provides a semiconductor package and an electronic element, wherein the semiconductor package comprises a heat dissipation system, the heat dissipation system comprises a heat conduction layer and a heat dissipation layer which are connected together, and the heat conduction layer is a liquid metal layer; the semiconductor packaging piece has a good heat conduction effect, heat generated by the semiconductor packaging piece during working can be quickly transferred out, and the service life and the safety performance of the semiconductor packaging piece are greatly improved; in addition, through the arrangement of the sealing layer, the liquid metal layer can be ensured to be prevented from leaking under the action of the sealing layer or under the action of capillary force, and the phenomenon that the liquid metal layer is hollow after cooling is avoided.
Description
Technical Field
The utility model belongs to the semiconductor field relates to a semiconductor packaging part and electronic component.
Background
Ball Grid Array (BGA) packaging is a surface mount package that replaces the conventional leads by ball bumps (balls) formed on the back of the substrate in an array, resulting in higher integration and better performance of the semiconductor device. The BGA packaging technology can remarkably increase the number of I/O pins of the device and reduce the space between the bonding pads, thereby reducing the size of the packaging part and saving the occupied space of the packaging part, and therefore, the miniaturization of high-density, high-performance and multi-pin packaging devices such as PC chip sets, microprocessors and the like becomes possible. With the increasing demands of packaging technology and product diversification, high speed, low cost, small size and excellent electrical performance are important development trends.
In a conventional BGA package manufacturing process, a chip is fixed to a substrate through a lower surface thereof, and then pads provided on an upper surface of the chip are electrically connected to pads on the substrate through metal lines by a wire bonding (wire bonding) process. Then, the chip and the substrate are molded (molding) to protect the chip and the internal metal lines. And finally, forming convex balls on the lower side of the substrate through a ball mounting process so as to enable the chip to be electrically connected with other external circuits.
Therefore, it is necessary to develop a semiconductor package that has less influence on heat dissipation and lifespan of the package in the BGA packaging process.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a semiconductor package and electronic component, through set up cooling system in semiconductor package, including heat-conducting layer and heat dissipation layer that link together, wherein the heat-conducting layer is the liquid metal layer, and it has better heat conductivility, can transfer away the heat that semiconductor package produced in the during operation rapidly to the heat-sinking capability of semiconductor package has greatly been improved; in addition, through the arrangement of the sealing layer, the liquid metal layer can be ensured to be prevented from leaking under the action of the sealing layer or under the action of capillary force, and the phenomenon that the liquid metal layer is hollow after cooling is avoided.
In order to achieve the purpose of the utility model, the utility model adopts the following technical proposal:
an object of the present invention is to provide a semiconductor package, the semiconductor package includes a heat dissipation system, the heat dissipation system includes a heat conduction layer and a heat dissipation layer connected together, the heat conduction layer is a liquid metal layer.
The utility model discloses a set up cooling system in semiconductor package, including heat-conducting layer and the heat dissipation layer that links together, wherein the heat-conducting layer is the liquid metal layer, and it has better heat conductivility, can shift away the heat that semiconductor package produced at the during operation rapidly to semiconductor package's heat-sinking capability has been improved greatly.
In the present invention, the heat conducting layer and the heat dissipating layer are connected together by conventional methods, such as lamination, evaporation, coating, welding, and coating.
The utility model discloses in do not do specifically and restrict the material of liquid metal layer, the melting point not be higher than 125 ℃ can, be solid-state at normal atmospheric temperature promptly, nevertheless along with the temperature rising, can become liquid, the coefficient of heat conductivity of material itself can reduce slightly, but the heat conductivility can improve greatly, exemplary if: a Ga-In-Bi-Sn liquid metal layer, a Ga-In-Bi-Sn liquid metal layer doped with any one or at least two of Ge, Si or Sb, an In-Bi-Sn liquid metal layer, a Ga-In-Sn liquid metal layer, a Ga-Sn liquid metal layer, and the like, and further preferably an In-Bi-Sn eutectic phase alloy liquid metal layer. The preparation method of the middle liquid metal layer of the utility model comprises the following steps: mixing the raw materials, smelting in inert gas, and cooling to obtain a liquid alloy layer; the liquid metal is formed by adopting a traditional dispenser, on one hand, the weight and the volume of the added liquid metal can be controlled, and on the other hand, the loss in the preparation process of the liquid metal layer can be avoided.
In the utility model, the heat dissipation layer comprises a heat dissipation fin and a heat dissipation support piece arranged on the outer periphery of the heat dissipation fin; the radiating fin and the radiating support piece are integrally formed or detachably connected.
The utility model discloses in do not specifically limit to the material and the thickness on heat dissipation layer, the technical personnel in the field can adjust exemplary selection metal level according to actual need.
The utility model discloses in, the material on heat dissipation layer is copper or aluminium usually, also can carry out some surface treatment to the material surface on heat dissipation layer, and the layer of being convenient for dispel the heat and the better contact of liquid metal set up titanium or the alloy-layer that contains titanium on the surface on heat dissipation layer, can increase the wettability on heat dissipation layer, and can not take place chemical reaction with the heat dissipation layer, is convenient for with heat dissipation layer and heat-conducting layer welding together.
The utility model discloses in, the heat dissipation layer still includes dentate structure, dentate structure sets up and keeps away from at the fin the surface of heat-conducting layer one side.
The utility model discloses in, the fin keeps away from the surface of heat-conducting layer one side and still is provided with dentate structure, is convenient for go out the heat conduction that semiconductor packaging part produced.
The present invention is directed to a semiconductor package, which comprises a chip and a chip carrier, wherein the chip comprises a first surface and a second surface, the first surface of the chip is connected to a heat conduction layer in a heat dissipation system, and the second surface of the chip is connected to the chip carrier and electrically connected to the chip carrier.
The utility model discloses in, the chip is the chip of the conventional use in this field, and the material of chip is silicon, silica, silicon nitride etc. usually, in the chip use, can not handle the surface of chip, also can set up titanium layer or the alloy-layer that contains titanium between chip and heat-conducting layer.
The utility model discloses in, the chip holds and is provided with the copper conducting wire on the carrier usually, for preventing that liquid metal from dripping to cause the short circuit on the carrier is held to the chip, can hold and set up the electrically conductive polymer protective layer of one deck non-conductivity on the carrier, especially the chip holds the electrically conductive part that exposes on the carrier.
The utility model discloses in, the surperficial interval of the second face of chip is provided with two at least conductive convex blocks, conductive convex block's convex surface connects and puts and electric connection chip holds carrier.
The utility model discloses the surperficial circuit that is provided with of the second face of well chip, conductive convex block's effect is the conduction that is used for the electric charge, and conductive convex block's number is at least two, and concrete number and shape etc. set up technical field personnel and can adjust according to actual need.
The utility model discloses in, semiconductor package still includes the underfill, the underfill encircles the outer peripheral edges of establishing at electrically conductive lug to be used for filling in the clearance between two electrically conductive lugs, its effect is fixed electrically conductive lug on the chip, avoids receiving under the condition of external forces such as impact, buckling, the easy emergence fracture of welding position.
The utility model discloses in, the chip holds the heat dissipation support piece that holds in the carrier and the heat dissipation layer and passes through the glue film and link to each other.
In the present invention, the connection means is formed by gluing.
In the present invention, the chip carrier is a ball grid array substrate.
The utility model discloses well chip holds carrier and chooses ball grid array base plate for use, it is high to have a yield, can reduce two orders of magnitude with narrow interval solder joint failure rate.
The utility model discloses do not specifically limit to the shape and the size that the chip bore carrier, technical personnel in the field can be transferred into according to actual need.
The utility model discloses in, semiconductor package still includes the sealing layer, the sealing layer ring is established in the outer peripheral edges of chip and heat-conducting layer, and with the heat dissipation support piece interval setting in the heat dissipation layer.
The utility model discloses an outer peripheral edges at chip and heat-conducting layer sets up the sealing layer to seal heat-conducting layer and chip and form seal structure, can get up the effectual protection of chip, reduce the loss of chip, on the other hand can further avoid the liquid metal layer to reveal because of melting, then return back formation cavity at the condensation, thereby influence the radiating effect and the life of chip.
The material of the sealing layer is not particularly limited, the material of the same material as the heat dissipation layer can be selected, and the sealing layer and the heat dissipation layer can be integrally formed in the preparation process; the sealing layer can also select high temperature resistant ya keli glue film, can coat in the outer peripheral edges of heat-conducting layer and chip through the mode of coating.
The utility model discloses in, the sealing layer includes first end and second end, and first end and heat dissipation layer link to each other, and second end and chip hold carrier and link to each other.
The utility model discloses in, the heat-conducting layer includes the relative district of liquid metal relative with the chip and the not relative district of liquid metal not relative with the chip, the heat dissipation layer is provided with at least one space with a side surface that the heat-conducting layer contacted, the space is located the not relative district of liquid metal directly over for accept the heat-conducting layer and receive the part of thermal expansion.
The utility model discloses in, the heat-conducting layer is liquid metal layer promptly, and its part just to the chip is called liquid metal relative area, and the part not just relative with the chip is called liquid metal not relative area, and the sealing layer is the outer peripheral edge of encapsulation in liquid metal not relative area, avoids liquid metal to be heated to leak, and this application does not do specific restriction to the shape of sealing layer, and the shape according to liquid metal layer is adjusted can; the gap is arranged right above the liquid metal non-opposite area and is used for receiving the part expanded by heat of the heat conduction layer.
In the present invention, the sealing layer includes a first end and a second end, the shortest distance between the first end and the heat dissipation layer is 0-5 μm (e.g., 0 μm, 0.5 μm, 1 μm, 1.5 μm, 2 μm, 2.5 μm, 3 μm, 3.5 μm, 4 μm, 4.5 μm, 5 μm, etc.), the second end is connected to the chip carrier; the sealing layer is a convex arc structure, the convex arc structure protrudes to one side of the heat conduction layer, and an included angle formed by a tangent line of the convex arc structure and the radiating fin is 5-25 degrees, such as 5 degrees, 8 degrees, 10 degrees, 12 degrees, 15 degrees, 17 degrees, 20 degrees, 22 degrees, 25 degrees and the like.
In the utility model, the shortest distance between the first end and the heat dissipation layer is 0-5 μm, the sealing layer is a convex arc structure, the convex arc structure protrudes to one side of the heat conduction layer, namely a very small corner is formed between the sealing layer and the heat dissipation layer (namely, the included angle formed by the tangent line of the convex arc structure and the heat dissipation sheet is 5-25 degrees), and the small corner gap has capillary force and can store overflowing metal liquid; the contact surface of the radiating fin and the convex arc structure is a plane, the corner is an included angle formed by a tangent line of the convex arc structure and the radiating fin, and if the contact surface of the radiating fin and the convex arc structure is a cambered surface, the corner is an included angle formed by the tangent line of the convex arc structure and the tangent line of the cambered surface.
In the present invention, the distance between the chip and the heat dissipation layer is 10 to 70 μm (e.g., 10 μm, 15 μm, 20 μm, 25 μm, 30 μm, 35 μm, 40 μm, 45 μm, 50 μm, 55 μm, 60 μm, 65 μm, 70 μm, etc.), and the shape of the heat conductive layer is an ellipsoid shape.
The utility model discloses in, the distance between chip and the heat dissipation layer is less, is the heat-conducting layer between chip and the heat dissipation layer, is about to the thickness control of heat-conducting layer within less within range, and the heat-conducting layer can form the shape of ellipsoid form, has capillary force for liquid metal can not leak.
The utility model discloses in, the outer peripheral edges of heat-conducting layer are provided with the heat conduction sealing layer, the heat dissipation support piece interval in heat conduction sealing layer and the heat dissipation layer sets up.
For further guarantee that liquid metal can not leak, set up the heat conduction sealing layer in the outer peripheral edges of heat-conducting layer, can further guarantee that liquid metal can not leak.
The utility model discloses an outer peripheral edges of heat-conducting layer sets up the sealing layer to seal up the heat-conducting layer and form seal structure, can further avoid the liquid metal level because of melting and reveal, then contract back formation cavity at the condensation, thereby influence radiating effect and life.
The material of the heat-conducting sealing layer is not particularly limited, the material with the same material as the heat dissipation layer can be selected, and the heat-conducting sealing layer can be prepared in a mode of being integrally formed with the heat dissipation layer in the preparation process; the sealing layer heat conduction sealing layer also can select high temperature resistant ya keli glue film, can coat in the outer peripheral edges of heat-conducting layer through the mode of coating.
A second object of the present invention is to provide an electronic device, which includes the semiconductor package of the first object.
Compared with the prior art, the utility model discloses following beneficial effect has:
the semiconductor packaging part comprises a heat dissipation system, the heat dissipation system comprises a heat conduction layer and a heat dissipation layer which are connected together, the heat conduction layer is a liquid metal layer, and the semiconductor packaging part has better heat conduction capability and can quickly conduct heat generated by a chip; in addition, through the arrangement of the sealing layer, the liquid metal layer can be ensured to be prevented from leaking under the action of the sealing layer or under the action of capillary force, and the phenomenon that the liquid metal layer is hollow after cooling is avoided.
Drawings
Fig. 1 is a schematic structural view of a heat dissipation system in embodiment 1;
FIG. 2 is a schematic view showing the structure of a heat dissipation layer in example 1;
fig. 3 is a schematic structural view of a semiconductor package in embodiment 1;
FIG. 4 is a schematic view of the thermally conductive layer of FIG. 3;
fig. 5 is a schematic structural view of a semiconductor package according to embodiment 2;
FIG. 6 is an enlarged view of the dotted line of FIG. 5;
fig. 7 is a schematic structural view of a semiconductor package according to embodiment 3;
fig. 8 is a schematic structural view of a semiconductor package according to embodiment 4;
FIG. 9 is a schematic view showing a structure of a heat dissipating layer in embodiment 5;
the heat dissipation device includes a heat dissipation system 1, a chip 2, a chip carrier 3, an underfill layer 4, a glue layer 5, a sealing layer 6, a heat conductive sealing layer 7, a heat conductive layer 11, a liquid metal opposing region 111, a liquid metal non-opposing region 112, a heat dissipation layer 12, a gap 13, a heat sink 121, a heat dissipation support 122, a tooth-shaped structure 123, and a conductive bump 21.
Detailed Description
The technical solution of the present invention will be further explained by the following embodiments. It should be understood by those skilled in the art that the described embodiments are merely provided to assist in understanding the present invention and should not be construed as specifically limiting the present invention.
Example 1
The present embodiment provides a semiconductor package including a heat dissipation system, as shown in fig. 1 and 2, the heat dissipation system 1 includes a heat conduction layer 11 and a heat dissipation layer 12 connected together, and the heat dissipation layer includes a heat dissipation fin 121 and a heat dissipation support 122 disposed on an outer periphery of the heat dissipation fin 121. As shown in fig. 3 and 4, the semiconductor package includes a heat dissipation system, a chip 2, and a chip carrier 3; the chip 2 comprises a first surface and a second surface, the first surface of the chip 2 is connected with a heat conduction layer 11 in the heat dissipation system, and the second surface of the chip 2 is connected with the chip bearing piece 3 in an electrical connection mode; at least two conductive bumps 21 are arranged on the surface of the second surface of the chip 2 at intervals, and convex surfaces of the conductive bumps 21 are connected with the chip bearing member 3 in an electrical mode; the underfill layer 4 is disposed on the outer periphery of the conductive bumps 21 and is used for filling the gap between any two conductive bumps 21; the chip carrier 3 is connected with the heat dissipation support piece in the heat dissipation layer 12 through the adhesive layer 5; the sealing layer 6 is arranged around the chip 2 and the outer periphery of the heat conduction layer 11, and is arranged at intervals with the heat dissipation support piece in the heat dissipation layer 12; the sealing layer 6 comprises a first end and a second end, the first end is connected with the heat dissipation layer 12, and the second end is connected with the chip carrier 3; the heat conduction layer 11 comprises a liquid metal opposite area 111 opposite to the chip 2 and a liquid metal non-opposite area not opposite to the chip 2, a side surface of the heat dissipation layer 12 contacting with the heat conduction layer 11 is provided with a gap 13, and the gap 13 is positioned right above the liquid metal non-opposite area 112 and is used for receiving a part of the heat conduction layer 11 which expands when heated. The liquid metal layer in the embodiment has a good heat conduction effect, and can quickly conduct heat generated by the chip out; the sealing layer is arranged on the outer sides of the liquid metal and the chip, so that the heat conducting layer and the chip are sealed, the liquid metal can be gradually melted into liquid along with the rise of temperature in the subsequent application process of the semiconductor packaging sheet, the liquid has fluidity and can flow out in different directions, and then a cavity can be formed at the original heat conducting layer in the condensation process, so that the heat conducting effect of the chip is influenced, and the service life of the heat conducting layer is shortened; and the heat dissipation layer is provided with a gap which can bear the expansion part of the liquid metal, so that the pressure borne by the sealing layer and generated by the expansion of the liquid metal can be reduced, and the service life of the semiconductor packaging piece is prolonged.
Example 2
As shown in fig. 5 and 6, the semiconductor package includes a heat dissipation system, a chip 2, and a chip carrier 3; the composition of the heat dissipation system is the same as that of embodiment 1; the chip 2 comprises a first surface and a second surface, the first surface of the chip 2 is connected with a heat conduction layer 11 in the heat dissipation system, and the second surface of the chip 2 is connected with the chip bearing piece 3 in an electrical connection mode; at least two conductive bumps 21 are arranged on the surface of the second surface of the chip 2 at intervals, and convex surfaces of the conductive bumps 21 are connected with the chip bearing member 3 in an electrical mode; the underfill layer 4 is disposed on the outer periphery of the conductive bumps 21 and is used for filling the gap between any two conductive bumps 21; the chip carrier 3 is connected with the heat dissipation support piece in the heat dissipation layer 12 through the adhesive layer 5; the sealing layer 6 is arranged around the chip 2 and the outer periphery of the heat conduction layer 11, and is arranged at intervals with the heat dissipation support piece in the heat dissipation layer 12; the sealing layer 6 comprises a first end and a second end, the shortest distance between the first end and the heat dissipation layer 12 is 3 micrometers, and the second end is connected with the chip bearing piece; the sealing layer 6 is a convex arc structure, the convex arc structure protrudes to one side of the heat conduction layer 11, and an included angle formed between a tangent line of the convex arc structure and the upper horizontal line radiating fins 121 is 15 degrees.
The liquid metal layer in the embodiment has a good heat conduction effect, and can quickly conduct heat generated by the chip out; the sealing layer is arranged on the outer sides of the liquid metal and the chip, so that the heat conducting layer and the chip are sealed, the liquid metal can be gradually melted into liquid along with the rise of temperature in the subsequent application process of the semiconductor packaging sheet, the liquid has fluidity and can flow out in different directions, and then a cavity can be formed at the original heat conducting layer in the condensation process, so that the heat conducting effect of the chip is influenced, and the service life of the heat conducting layer is shortened; the shortest distance between the first end and the heat dissipation layer is controlled, the sealing layer is of a convex arc structure, the convex arc structure protrudes to one side of the heat conduction layer, namely a very small corner is formed between the sealing layer and the heat dissipation layer, a small corner gap has capillary force and can store excessive metal liquid, the shortest distance between the first end and the heat dissipation layer is only 3 micrometers, an included angle formed between the tangent line of the convex arc structure and the upper horizontal line heat dissipation sheet 121 is 15 degrees, the shortest distance between the first end and the heat dissipation layer is 0-5 micrometers through experimental verification, an included angle formed between the tangent line of the convex arc structure and the upper horizontal line heat dissipation sheet 121 is 5-25 degrees, the formed corner has capillary force and can store the excessive metal liquid.
Example 3
As shown in fig. 7, the semiconductor package includes a heat dissipation system, a chip 2, and a chip carrier 3; the composition of the heat dissipation system is the same as that of embodiment 1; the chip 2 comprises a first surface and a second surface, the first surface of the chip 2 is connected with a heat conduction layer 11 in the heat dissipation system, and the second surface of the chip 2 is connected with the chip bearing piece 3 in an electrical connection mode; at least two conductive bumps 21 are arranged on the surface of the second surface of the chip 2 at intervals, and convex surfaces of the conductive bumps 21 are connected with the chip bearing member 3 in an electrical mode; the underfill layer 4 is disposed on the outer periphery of the conductive bumps 21 and is used for filling the gap between any two conductive bumps 21; the chip carrier 3 is connected with the heat dissipation support piece in the heat dissipation layer 12 through the adhesive layer 5; the distance between the chip carrier 3 and the heat sink 121 of the heat dissipation layer 12 is 30 μm, and the shape of the heat conductive layer is ellipsoidal, i.e. the maximum thickness of the heat conductive layer is 30 μm.
The liquid metal layer has a good heat conduction effect in the embodiment, heat generated by the chip can be conducted out rapidly, the distance between the chip and the heat dissipation layer is small, the heat conduction layer is arranged between the chip and the heat dissipation layer, the thickness of the heat conduction layer is controlled within a small range, the heat conduction layer can form an ellipsoid-shaped shape and has capillary force, and the liquid metal cannot leak.
Example 4
As shown in fig. 8, the only difference from embodiment 3 is that the outer periphery of the heat conductive layer is provided with the heat conductive sealing layer 7, and the heat conductive sealing layer 7 is provided at a distance from the heat dissipation support in the heat dissipation layer 12.
In this embodiment, the heat conductive sealing layer is disposed on the outer periphery of the heat conductive layer based on embodiment 3, so that it is further ensured that the liquid metal does not leak.
Example 5
The only difference from embodiment 1 is that, as shown in fig. 9, the heat dissipation layer 12 includes a heat dissipation fin 121, a heat dissipation support 122 disposed on the outer periphery of the heat dissipation fin 121, and a tooth-like structure 123 disposed on the surface of the heat dissipation fin 121 on the side away from the heat conductive layer.
In this embodiment, on the basis of embodiment 1, the tooth-shaped structure is disposed on the surface of the heat sink away from the heat conducting layer, so as to facilitate rapid heat dissipation, thereby increasing the service life of the semiconductor package.
The semiconductor package provided by this embodiment mode can be used for an electronic component.
The applicant states that the above description is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto, and those skilled in the art should understand that any changes or substitutions easily conceivable by those skilled in the art within the technical scope of the present invention are within the protection scope and the disclosure scope of the present invention.
Claims (12)
1. A semiconductor package, characterized in that the semiconductor package comprises a heat dissipation system (1), the heat dissipation system (1) comprises a heat conduction layer (11) and a heat dissipation layer (12) connected together, the heat conduction layer (11) is a liquid metal layer;
the heat dissipation layer (12) comprises a heat dissipation fin (121) and a heat dissipation support (122) arranged on the outer periphery of the heat dissipation fin (121); the radiating fin (121) and the radiating support (122) are integrally formed or detachably connected;
the semiconductor packaging piece further comprises a chip (2) and a chip bearing piece (3), wherein the chip (2) comprises a first surface and a second surface, the first surface of the chip (2) is connected with a heat conduction layer (11) in the heat dissipation system (1), and the second surface of the chip (2) is connected with the chip bearing piece (3) in a connection and electrical connection mode.
2. The semiconductor package according to claim 1, wherein the heat dissipation layer (12) further comprises a tooth structure (123), and the tooth structure (123) is disposed on a surface of the heat sink (121) on a side away from the heat conductive layer (11).
3. The semiconductor package according to claim 1, wherein the surface of the second surface of the chip (2) is spaced apart from the first surface by at least two conductive bumps (21), and the convex surfaces of the conductive bumps (21) are connected to the chip carrier (3) and electrically connected thereto.
4. The semiconductor package according to claim 3, further comprising an underfill layer (4), wherein the underfill layer (4) surrounds the outer periphery of the conductive bumps (21) and is used for filling a gap between any two conductive bumps (21).
5. The semiconductor package according to claim 1, wherein the chip carrier (3) is connected to the heat dissipation support (122) in the heat dissipation layer (12) by a glue layer (5).
6. The semiconductor package according to claim 1, further comprising a sealing layer (6), wherein the sealing layer (6) is disposed around the chip (2) and the heat conducting layer (11) and spaced apart from the heat dissipating support (122) in the heat dissipating layer (12).
7. The semiconductor package according to claim 6, wherein the encapsulation layer (6) comprises a first end and a second end, the first end being connected to the heat dissipation layer (12) and the second end being connected to the chip carrier (3).
8. The semiconductor package according to claim 7, wherein the heat conducting layer (11) comprises a liquid metal opposite region (111) opposite to the chip (2) and a liquid metal opposite region (112) not opposite to the chip (2), and a side surface of the heat dissipation layer (12) contacting the heat conducting layer (11) is provided with at least one gap (13), and the gap (13) is located right above the liquid metal opposite region (112) and is used for receiving a portion of the heat conducting layer (11) which expands when heated.
9. The semiconductor package according to claim 6, wherein the sealing layer (6) comprises a first end and a second end, the shortest distance between the first end and the heat dissipation layer (12) is 0-5 μm, and the second end is connected to the chip carrier (3);
the sealing layer (6) is of a convex arc structure, the convex arc structure protrudes to one side of the heat conduction layer (11), and an included angle formed by a tangent line of the convex arc structure and the radiating fins (121) is 5-25 degrees.
10. The semiconductor package according to claim 1, wherein the distance between the chip (2) and the heat dissipation layer (12) is 10-70 μm, and the shape of the heat conduction layer (11) is an ellipsoid shape.
11. The semiconductor package according to claim 10, wherein the outer periphery of the heat conductive layer (11) is provided with a heat conductive sealing layer (7), and the heat conductive sealing layer (7) is spaced from the heat dissipation support (122) in the heat dissipation layer (12).
12. An electronic component characterized in that the electronic component comprises the semiconductor package according to any one of claims 1 to 11.
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| CN201922298756.XU CN211907417U (en) | 2019-12-19 | 2019-12-19 | Semiconductor packaging piece and electronic element |
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| CN201922298756.XU CN211907417U (en) | 2019-12-19 | 2019-12-19 | Semiconductor packaging piece and electronic element |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115379735A (en) * | 2022-08-30 | 2022-11-22 | 深圳市卓汉材料技术有限公司 | Elastic heat conductor |
| CN115666109A (en) * | 2022-11-28 | 2023-01-31 | 荣耀终端有限公司 | Heat-conducting film, preparation method, electronic component, circuit board assembly and electronic equipment |
| CN117293103A (en) * | 2023-10-13 | 2023-12-26 | 苏州融睿电子科技有限公司 | Chip packaging structure |
| WO2024053699A1 (en) * | 2022-09-09 | 2024-03-14 | Ｎｅｃプラットフォームズ株式会社 | Electronic device and manufacturing method for electronic device |
| TWI841420B (en) * | 2023-06-15 | 2024-05-01 | 矽品精密工業股份有限公司 | Electronic package and manufacturing method thereof |
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2019
- 2019-12-19 CN CN201922298756.XU patent/CN211907417U/en active Active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115379735A (en) * | 2022-08-30 | 2022-11-22 | 深圳市卓汉材料技术有限公司 | Elastic heat conductor |
| WO2024053699A1 (en) * | 2022-09-09 | 2024-03-14 | Ｎｅｃプラットフォームズ株式会社 | Electronic device and manufacturing method for electronic device |
| JP7469410B2 (en) | 2022-09-09 | 2024-04-16 | Ｎｅｃプラットフォームズ株式会社 | Electronic device and method for manufacturing electronic device |
| CN115666109A (en) * | 2022-11-28 | 2023-01-31 | 荣耀终端有限公司 | Heat-conducting film, preparation method, electronic component, circuit board assembly and electronic equipment |
| TWI841420B (en) * | 2023-06-15 | 2024-05-01 | 矽品精密工業股份有限公司 | Electronic package and manufacturing method thereof |
| CN117293103A (en) * | 2023-10-13 | 2023-12-26 | 苏州融睿电子科技有限公司 | Chip packaging structure |
| CN117293103B (en) * | 2023-10-13 | 2024-09-13 | 苏州融睿电子科技有限公司 | Chip packaging structure |
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