CN211905878U

CN211905878U - Distortion-eliminating dot matrix projection device

Info

Publication number: CN211905878U
Application number: CN202020443913.1U
Authority: CN
Inventors: 陈驰; 李安; 鲁亚东; 黄若普
Original assignee: Shenzhen Angstrong Technology Co ltd
Current assignee: Shenzhen Angstrong Technology Co ltd
Priority date: 2020-03-31
Filing date: 2020-03-31
Publication date: 2020-11-10
Anticipated expiration: 2030-03-31

Abstract

The application discloses a distortion-eliminating dot matrix projection device, which comprises an array light source, a reverse scanning lens and a diffractive optical element, wherein a first light beam emitted by the array light source is emitted to be a second light beam through the reverse scanning lens, and the second light beam is copied to be an emitted third light beam through the diffractive optical element; the field angle α of the second light beam 102 and the field angle γ of the third light beam 103 have a constraint relationship: alpha >0.8 gamma. The application can eliminate the distortion of the dot matrix pattern projected by the projector, so as to be better applied to a D-TOF3D imaging device.

Description

Distortion-eliminating dot matrix projection device

Technical Field

The utility model relates to a 3D degree of depth imaging technical field, concretely relates to dot matrix projection arrangement of distortion disappears.

Background

Depth information, i.e. information on the distance of the object from the photographing apparatus, can be obtained, and such an imaging apparatus we refer to as a 3D imaging apparatus. The 3D imaging device has already begun to be applied to some electronic consumer products in the market, such as motion recognition of motion sensing games, 3D application of AR/VR to the physical world, 3D face recognition of a new generation iphone, vehicle-mounted laser radar, and the like. The 3D imaging device can greatly enrich the experience of users and improve the competitiveness of products.

The TOF technology is a key mainstream technology for realizing 3D imaging, and the TOF is called Time-Of-Flight, that is, the Time Of Flight, and measures the Time interval from the emitting Time to the Time when the emitted light is reflected by an object to the receiving end, and according to the principle that the light speed is not changed, the distance measurement can be realized. TOF techniques are divided into I-TOF and D-TOF, the I-TOF technique is mature and commonly used in the market at present, namely index Time-Of-Flight, the I-TOF transmits a beam Of Time periodically modulated laser to the surface Of an object through a laser transmitting device, return light generates a Time delay relative to incident light in Time sequence, the Time delay is specifically expressed as phase delay, the size Of the phase delay and the Flight Time Of the light have a corresponding calculation relation, namely the Flight Time Of the light is indirectly obtained by measuring the phase delay, and further distance measurement is realized. The D-TOF (Direct Time-Of-Flight) technology is used for directly measuring the light Flight Time, and is not indirectly obtained by other means.

Regardless of the active 3D imaging device, it includes both a light projector and a receiver. In D-TOF technology using a lattice scheme, distortion control of the lattice projector must be faced to accurately match the pixel positions on the acquisition sensor (e.g., SPAD array), otherwise large measurement errors are incurred.

In the prior art, the TOF-based calibration methods provided in patent application documents with publication numbers CN 109946681a and CN 109754425a are both used for calibration of internal and external parameters and radial distortion parameters of a TOF camera to eliminate distortion, and are not improvements on the components of the apparatus itself.

SUMMERY OF THE UTILITY MODEL

In order to solve the above technical problem, the present application provides an undistorted dot matrix projection apparatus, which eliminates the distortion of the dot matrix pattern projected by the projector, so as to be better applied in the D-TOF3D imaging apparatus.

In order to realize the purpose of the utility model, the following technical scheme is adopted in the application:

an anti-distortion dot matrix projection device comprises an array light source, an inverse scanning lens and a diffraction optical element;

the first light beam emitted by the array light source is emitted as a second light beam through the inverse scanning lens, and the second light beam is copied as an emitted third light beam through the diffraction optical element; the field angle alpha of the second light beam and the field angle gamma of the third light beam have a constraint relation: alpha >0.8 gamma.

Several alternatives are provided below, but not as an additional limitation to the above general solution, but merely as further additions or preferences, which can be combined individually for the above general solution or among several preferences without technical or logical contradictions.

Preferably, the array light source includes a plurality of sub light sources, each sub light source emits a sub light beam, and all the emitted sub light beams form the first light beam.

Preferably, the array light source is a vcsel array light source.

Preferably, the inverse scanning lens is a single lens or a lens group consisting of a plurality of lenses.

Preferably, the angle of view β of the diffractive optical element is <5 °.

Preferably, the surface microstructure of the diffractive optical element is distributed according to a random phase, i.e. a random phase DOE.

Preferably, the array light source is composed of a plurality of single laser emitters.

Preferably, the array light source is composed of a plurality of independently controlled sub-array light sources.

Drawings

FIG. 1 is a schematic view of a dot matrix projector according to an embodiment of the present application;

FIG. 2 is a diagram illustrating the distortion effect of the dot matrix projection in the embodiment of the present application;

FIG. 3 is a schematic diagram of an undistorted dot matrix projection pattern according to an embodiment of the present application;

FIG. 4 is a diagram of a source of a vcsel array in an embodiment of the present application, in which a is a diagram of regularly arranged light emitting holes and b is a diagram of randomly arranged light emitting holes;

FIG. 5 is a partially enlarged top view of a diffractive optical element in an embodiment of the present application;

fig. 6 is a diagram comparing diffraction patterns of a normal diffractive DOE and a random phase DOE on a single-point collimated laser beam, where a is a diagram showing a diffraction pattern of a normal diffractive DOE on a single-point collimated laser beam, and b is a diagram showing a diffraction pattern of a random phase DOE 30 on a single-point collimated laser beam in the embodiment of the present application.

Detailed Description

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those specifically described herein, and the present invention is not limited to the specific embodiments disclosed below.

Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary and intended to be used for explaining the present invention, and should not be construed as limiting the present invention.

The conventional dot matrix projector comprises a vcsel array luminous source, a collimating mirror and a diffraction element DOE, wherein the field angle of the collimating mirror is small, the diffraction element DOE adopts a strict periodic phase design method, and is based on a vector diffraction theory, and the field angle is large. The dot matrix projection effect of the whole projector is shown in fig. 2, and it can be seen that the whole projected dot matrix pattern has larger distortion, and the closer to the edge, the more serious the distortion.

Fig. 1 shows a dot matrix projector according to an embodiment of the present invention, which includes a vcsel array light source 10, a reverse scan lens 20, and a random phase DOE 30. The first light beam 101 emitted by the vcsel array light source 10 passes through the inverse scanning lens 20 and then becomes a second light beam 102 emitted with a large field angle, and the field angle alpha of the inverse scanning lens 20 is larger than 0.8 times of the field angle gamma of the whole dot-matrix projector. After passing through the random-phase DOE 30, the second beam 102 is transformed into a third beam 103, which is emitted as more sub-beams, under the action of its undistorted diffraction replication. The third light beam 103 forms an undistorted dot matrix projection pattern as shown in fig. 3 on the front receiving screen 40.

The vcsel array light source 10 includes a plurality of laser emitting holes 1010, which may be arranged regularly as shown in fig. 4a or randomly as shown in fig. 4 b. As shown in fig. 1, each laser emitting hole 1010 emits a sub-beam 1011, and the emitted sub-beams of all the holes together form the first beam 101. The emission wavelength of the vcsel array light source can cover ultraviolet light, visible light and infrared light, and is selected according to application requirements. Meanwhile, the laser emitting holes 1010 in different areas can form sub-arrays, so that the light emitting switches of the sub-arrays can be controlled independently. In some embodiments, multiple individual laser emitters may be used in a suitable arrangement to achieve the same lighting effect as the vcsel array light source 10.

The inverse scan lens 20 may be in the form of a single lens, or may be a lens group formed by a plurality of lenses, and has an action characteristic of collimating each sub-beam emitted from the vcsel array light source 10 in parallel and emitting the sub-beam at a larger angle. In fig. 1, after passing through the inverse scanning lens 20, the sub-beams emitted from the laser emitting holes 1010 at the extreme edge position in the vcsel array light source 10 become parallel beams 1021, and a beam angle α of the parallel beams represents a field angle of the inverse scanning lens 20, that is, a field angle of the second beam, which is much larger than that of a common collimating lens, that is, the inverse scanning lens 20 has an obvious beam expanding effect. The first light beam 101 passes through the inverse scanning lens 20 and then exits to form a second light beam 102, which includes a parallel light beam 1021 corresponding to each laser emitting hole.

The random phase DOE 30 is a micro-nano optical element with a surface microstructure distributed according to a random phase, and can perform distortion-eliminating diffraction replication based on scalar diffraction theory design, for example, fig. 5 is a partial enlarged top view of the random phase DOE 30, it can be seen that a microstructure pattern is random and irregular, the illustration is only one pattern illustration, and there are various random and irregular microstructure patterns with different differences in practical application. The random phase DOE 30 has an effect characteristic of performing the distortion-free diffraction replication of a very small field angle on an incident beam, that is, the random phase DOE 30 has two characteristics of the very small field angle and distortion-free diffraction, and the field angle of the random phase DOE 30 is usually less than 5 °. The ordinary diffractive DOE adopts a strict periodic phase design method, is based on a vector diffraction theory, follows a strict grating diffraction formula, and inevitably generates distortion, and as shown in fig. 6(a), the diffraction pattern of the ordinary diffractive DOE on a single-point laser collimated light beam has obvious distortion. Fig. 6(b) shows a diffraction pattern of the single-point collimated laser beam by the random-phase DOE 30 of the present embodiment, which has an effect of eliminating distortion. As a preferred embodiment, each parallel beam 1021 in fig. 1 passes through a random phase DOE 30 and is then replicated into 3 beams, which shows the replication effect in the yz plane, and actually has the same 3-fold replication effect in the xz plane, i.e. the total diffraction replication multiple is 3 × 3 — 9. The angle between the edge beam and the center beam of these 3 beams is β, which is the field angle of the random phase DOE 30, β <5 °, and due to the presence of this diffraction field angle, the field angle γ of the third beam 103 is slightly increased with respect to the field angle α of the second beam 102, and also has a certain beam expansion effect, and the angle γ is also the field angle of the entire anamorphic dot matrix projection apparatus. The diffraction replication factor of 9 in the figure is merely illustrative, and the random phase DOE 30 can be designed to any diffraction replication factor as desired.

In the present embodiment, the angle of view α of the second light beam 102 and the angle of view γ of the third light beam 103 have a constraint relationship: α >0.8 γ, and γ is at the same time also the field of view of the entire anamorphic dot matrix projection device, i.e. the field of view of the entire anamorphic dot matrix projection device is substantially determined by the field of view of the inverse scan lens 20.

As shown in fig. 3, in the present embodiment, after the complete set of the distortion-eliminating dot matrix projection apparatus, the light beam emitted from the laser emitting hole 1010 in fig. 1 finally reaches the receiving screen 40 to form the spot area 1031, the spot 10101 is a spot formed by the central diffracted light beam, i.e. a zero order, and the 8 adjacent peripheral spots are all diffraction-replicated spots, which together form a 3 × 3-9-fold replication relationship in the xy direction. As can be seen from fig. 3, the diffracted replica spots generated by the random phase DOE 30 all surround a small range of the central spot, which is the effect of the small field angle diffraction of the DOE.

The above description is only exemplary of the preferred embodiments of the present invention, and should not be construed as limiting the scope of the present invention, and any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the present invention.

Claims

1. An anti-distortion dot matrix projection device, comprising an array light source, a reverse scanning lens and a diffractive optical element, characterized in that:

2. An anamorphic dot matrix projection device as set forth in claim 1 wherein the array light source includes a plurality of sub-light sources, each sub-light source emitting a sub-beam, all of the emitted sub-beams constituting the first light beam.

3. An anamorphic dot matrix projection device as claimed in claim 1 wherein the array light source is a vcsel array light source.

4. An anamorphic dot matrix projection device as set forth in claim 1 wherein the inverse scan lens is a single lens or a group of lenses.

5. An anamorphic dot matrix projection device as set forth in claim 1 wherein the diffractive optical element has a field angle β <5 °.

6. An anamorphic dot matrix projection device as set forth in claim 1 wherein the surface microstructure of the diffractive optical element is distributed with random phase.

7. An anamorphic dot matrix projection device as set forth in claim 1 wherein the array light source is comprised of a plurality of monolithic laser emitter arrays.

8. An anamorphic dot matrix projection device as set forth in claim 1 wherein the array light source is comprised of a plurality of independently controlled sub-array light sources.