CN210576025U

CN210576025U - Composite photovoltaic structure

Info

Publication number: CN210576025U
Application number: CN201921067746.9U
Authority: CN
Inventors: 廖世文
Original assignee: Ways Technical Corp Ltd
Current assignee: Ways Technical Corp Ltd
Priority date: 2019-07-09
Filing date: 2019-07-09
Publication date: 2020-05-19
Anticipated expiration: 2029-07-09

Abstract

The utility model is provided with a first photovoltaic unit on a transparent substrate, and a second photovoltaic unit which is connected with the first photovoltaic unit in parallel is superposed above the first photovoltaic unit; the first photovoltaic unit is arranged on a second transparent electrode layer, a first transparent conducting layer electrically connected with the first transparent electrode layer is covered above the first photovoltaic unit, the second photovoltaic unit is arranged on the first transparent conducting layer, and a second transparent conducting layer electrically connected with the second transparent electrode layer is covered above the second photovoltaic unit; therefore, the composite photovoltaic structure which can greatly improve the omnibearing light-gathering gain photoelectric reaction area, effectively increase the current quantity, does not influence the thickness of the whole structure and has low manufacturing process cost is obtained.

Description

Composite photovoltaic structure

Technical Field

The utility model relates to a solar photovoltaic technology is related to, aim at providing one kind and can promote omnidirectional spotlight gain photoelectric reaction area by a wide margin, effectively increase the electric current volume, do not influence overall structure thickness, and the compound photovoltaic structure of processing procedure with low costs to and the compound photovoltaic structure manufacturing method rather than relevant.

Background

The research of the thin film type battery is one direction expected by the public in the renewable energy. Although most of the solar cells commercialized today use silicon as its main material, thin film type cells are spotlighted by the industry and academia due to their characteristics such as simple process, light material, flexibility, etc.

Currently, Coating (Coating) is a technique for preparing a thin film of a solar cell during the preparation of a thin film type cell, and has the advantage of enabling the thin film to have better flatness and uniformity. Further, R2R (Reel-to-Reel, or Roll-to-Roll) process is a potential technique for large-area solar cell fabrication, and has been used in the industry, for example, in the fabrication of a flexible display (flexible display), based on the "soft" property of the flexible display, R2R process can be well matched with the operation of the flexible display, so as to produce these products with the advantages of plasticity, light weight, impact resistance, etc. at a lower cost.

The photoelectric conversion device of the thin film battery has various structures, one of which is called an organic polymer photovoltaic structure or a perovskite photovoltaic structure, and the related structure is shown in fig. 1, wherein a photovoltaic unit 12 is mainly disposed on a transparent substrate 11, an upper surface layer 123 and a lower surface layer 121 of the photovoltaic unit 12 are respectively a transparent electron transport layer and a transparent hole transport layer, and a transparent active layer 122 is disposed between the upper surface layer 123 and the lower surface layer 121.

The panel surface of the transparent substrate 11 is provided with a first transparent electrode layer 131 and a second transparent electrode layer 132 for forming insulation, the photovoltaic unit 12 is disposed on the second transparent electrode layer 132, a transparent conductive layer 141 electrically connected to the first transparent electrode layer 131 is disposed on the upper surface 123 of the photovoltaic unit 12, and an insulation layer 142 is disposed between the side surface of the photovoltaic unit 12 and the transparent conductive layer 141.

Similar to the conventional photovoltaic structure shown in fig. 1, although it has a wide optical spectrum adapted to the photoelectric conversion, a thin structure, a process condition of only 180 ℃ or lower, and the aforementioned low-illumination photoelectric conversion; however, the low light environment is limited by the low light intensity of the incident light source, and the current output for conversion is low even at high effective photoelectric conversion efficiency.

SUMMERY OF THE UTILITY MODEL

In view of this, the present invention provides a composite photovoltaic structure and a manufacturing method thereof, which can greatly increase the photoelectric reaction area of the omnidirectional light gathering gain, effectively increase the current amount, not affect the thickness of the whole structure, and have low manufacturing cost.

The technical means adopted by the utility model are as follows.

In the composite photovoltaic structure of the present invention, a first photovoltaic unit is disposed on a transparent substrate, and a second photovoltaic unit connected in parallel with the first photovoltaic unit is stacked above the first photovoltaic unit; wherein the first photovoltaic unit comprises a first lower surface layer, a first transparent active layer and a first upper surface layer; the second photovoltaic unit comprises a second lower surface layer, a second transparent active layer and a second upper surface layer; the first upper surface layer and the second upper surface layer are respectively a transparent electron transfer layer; the first lower surface layer and the second lower surface layer are respectively a transparent hole transmission layer; the first transparent active layer is arranged between the first upper surface layer and the first lower surface layer; and the second transparent active layer is arranged between the second upper surface layer and the second lower surface layer; wherein: the first photovoltaic unit is arranged on the second transparent electrode layer in a state that the first lower surface layer of the first photovoltaic unit is in contact with the second transparent electrode layer; a first transparent conducting layer electrically connected with the first transparent electrode layer is covered on the first upper surface layer of the first photovoltaic unit; the second photovoltaic unit is arranged on the first transparent conductive layer in a state that the second lower surface layer of the second photovoltaic unit is contacted with the first transparent conductive layer; a second transparent conducting layer electrically connected with the second transparent electrode layer is covered on the second upper surface layer of the second photovoltaic unit; the first transparent conducting layer extends to the first transparent electrode layer along the side surface of the first photovoltaic unit, and a first insulating layer is arranged between the side surface of the first photovoltaic unit and the first transparent conducting layer; the second transparent conducting layer extends to the second transparent electrode layer along the side face of the second photovoltaic unit, the side face of the first transparent conducting layer and the side face of the first photovoltaic unit, and a second insulating layer is arranged among the side face of the second photovoltaic unit, the side face of the first transparent conducting layer and the side face of the first photovoltaic unit and the second transparent conducting layer.

By utilizing the technical characteristics, the composite photovoltaic structure which can greatly improve the omnibearing light-gathering gain photoelectric reaction area, effectively increase the current quantity, does not influence the thickness of the whole structure and has low manufacturing process cost can be obtained.

According to the above technical features, the composite photovoltaic structure is provided with an optical hardening layer between the panel surface of the transparent substrate and the first and second transparent electrode layers.

According to the above technical features, the first photovoltaic unit and the second photovoltaic unit are organic photovoltaic units.

According to the above technical features, the first photovoltaic unit and the second photovoltaic unit are perovskite photovoltaic units.

According to the above technical feature, the first photovoltaic unit is an organic photovoltaic unit, and the second photovoltaic unit is a perovskite photovoltaic unit.

According to the above technical feature, the first photovoltaic unit is a perovskite photovoltaic unit, and the second photovoltaic unit is an organic photovoltaic unit.

According to the above technical features, the first photovoltaic unit and the second photovoltaic unit are organic photovoltaic units; the transparent electron transfer layers of the first photovoltaic unit and the second photovoltaic unit can be formed by slit coating PEI (polyethylene imine) and PEIE (polyethylene imine) as main components, drying with hot air at 90-140 ℃ for 3 minutes, and preferably having a thickness of 0.5-10 nm; the transparent hole transport layers of the first and second photovoltaic units may be solvent-diluted PEDOT: PSS (3,4-ethylenedioxythiophene) -Poly (styrene sulfonate)) as a main component (PEDOT: PSS), a polymer containing a plurality of EDOT (3,4-ethylenedioxythiophene monomers) and a plurality of sodium-p-styrene sulfonate (PSS) are mixed, for example, alcohols and the likeDiluting with polar solvent (such as ethanol), coating with slit, drying at 90-140 deg.C under nitrogen atmosphere for 5 min, and drying to form into shape with thickness of 100-500 nm; the first transparent active layer and the second transparent active layer may be P3HT/PCBM, PCPDTBT/PCBM (poly [2,6- (4,4-bis- (2-ethylhexyl) -4H-cyclopenta [2, 1-b; 3, 4-b']dithiophene)-alt-4,7-(2,1,3-benzothiadiazole)]phenyl-C61-butyl acid methyl ester, in which P3HT/PCBM is a poly (3-hexylthiophene), P3HT (P-type material) polymer semiconductor and a plurality of phenyl-C₆₁Butyric acid methyl ester (phenyl-C)₆₁-butyl acid methyl ester, PCBM (n-type material)), diluted with o-xylene, slit coated, dried at 90-140 ℃ for 3 minutes in nitrogen atmosphere, and dried to form, preferably to a thickness of 100-500 nm.

According to the above technical features, the first photovoltaic unit and the second photovoltaic unit are perovskite photovoltaic units; the transparent electron transfer layers of the first photovoltaic unit and the second photovoltaic unit can be formed by slit coating of PEDOT, PSS, Poly (3-phenylene) (P3HT) and Poly (bis (4-phenyl) (2,4,6-trimethylphenyl) amine) (PTAA), drying at 90-140 ℃ for 5 minutes in nitrogen atmosphere, and drying to a thickness of 100-500 nm; the transparent hole transfer layer of the first photovoltaic unit and the second photovoltaic unit can be formed by diluting main components containing PDPP3T, namely PCBM with a solvent, coating the main components with a slit, drying the main components for 5 minutes in a nitrogen atmosphere at 90-140 ℃ and drying the main components for forming, wherein the thickness is preferably 1-100 nm; the first transparent active layer and the second transparent active layer may be respectively formed by CH₃NH₃PbI₃、CsPbBr₃、CsPbI₃、 FAPbI₃(Formamidinium Lead Iodide)、FAPbBr₃One or a combination of (Formamidinium Lead bromine) is diluted by a solvent, and then dried for 5 minutes in a nitrogen atmosphere at 90-140 ℃ by slit coating, and then dried and formed, wherein the thickness is preferably 200-800 nm.

According to the above technical features, the first photovoltaic unit is an organic photovoltaic unit, and the second photovoltaic unit is a perovskite photovoltaic unit; the transparent electron transfer layer of the first photovoltaic unit can be prepared by coating PEI and PEIE serving as main components through a slit, and then drying the coated main components for 3 minutes by hot air at 90-140 DEG CPost-forming, preferably to a thickness of 0.5 to 10 nm; the transparent hole transport layer of the first photovoltaic unit can be a solvent-diluted PEDOT: PSS (PEDOT: PSS) which is a main component and is formed by mixing a Polymer (PEDOT) containing a plurality of EDOT (3,4-ethylenedioxythiophene monomers) and a plurality of sodium-p-styrene sulfonate (PSS), for example, the mixture is diluted by polar solvents such as alcohols (such as ethanol), dried for 5 minutes by slot coating at 90-140 ℃ in nitrogen atmosphere and then dried and formed, and the thickness is preferably 100-500 nm; the first transparent active layer of the first photovoltaic unit can be solvent-diluted P3HT/PCBM, PCPDTBT/PCBM, wherein P3HT/PCBM is poly (3-hexylthiophene), P3HT (P-type material) polymer semiconductor and poly phenyl-C₆₁Butyric acid methyl ester (phenyl-C)₆₁-butyl acid methyl ester, PCBM (n-type material)), diluted with ortho-xylene, slit coated, dried at 90-140 ℃ for 3 minutes in nitrogen atmosphere, and dried to form, preferably 100-500 nm thick; the transparent electron transfer layer of the second photovoltaic unit can be formed by slit coating of PEDOT, PSS, Poly (3-hexylthiophene) (P3HT) and Poly (bis (4-phenyl) (2,4, 6-trimetylphenyl) amine) (PTAA), drying at 90-140 ℃ for 5 minutes in nitrogen atmosphere, and drying to a thickness of 100-500 nm; the transparent hole transfer layer of the second photovoltaic unit can be formed by diluting main components containing PDPP3T, namely PCBM with a solvent, coating with a slit, drying at 90-140 ℃ for 5 minutes in a nitrogen atmosphere, and drying to form the transparent hole transfer layer, wherein the thickness is preferably 1-100 nm; the second transparent active layer of the second photovoltaic unit can be formed of CH₃NH₃PbI₃、CsPbBr₃、CsPbI₃、FAPbI₃、FAPbBr₃One or a combination of the two is diluted by a solvent, and then dried for 5 minutes in a nitrogen atmosphere at 90-140 ℃ by slit coating, and then dried and formed, wherein the thickness is preferably 200-800 nm.

According to the above technical features, the first photovoltaic unit is a perovskite photovoltaic unit, and the second photovoltaic unit is an organic photovoltaic unit; the transparent electron transfer layer of the first photovoltaic unit can be formed by drying and forming PEDOT, PSS, Poly (3-hexylthiophene) (P3HT) and Poly (bis (4-phenyl) (2,4, 6-trimetylphenyl) amine) (PTAA) in a nitrogen atmosphere at 90-140 ℃ after slit coating,the thickness is preferably 100 to 500 nm; the transparent hole transfer layer of the first photovoltaic unit can be formed by diluting main components containing PDPP3T, namely PCBM with a solvent, coating with a slit, drying at 90-140 ℃ for 5 minutes in a nitrogen atmosphere, and drying to form the transparent hole transfer layer, wherein the thickness is preferably 1-100 nm; the first transparent active layer of the first photovoltaic unit may be formed of CH₃NH₃PbI₃、CsPbBr₃、CsPbI₃、FAPbI₃、FAPbBr₃One or the combination of the two is diluted by a solvent, and then dried for 5 minutes in a nitrogen atmosphere at 90-140 ℃ by slit coating, and then dried and formed, wherein the thickness is preferably 200-800 nm; the transparent electron transfer layer of the second photovoltaic unit can be formed by coating PEI and PEIE serving as main components through a slit, drying the coated main components for 3 minutes at 90-140 ℃ by hot air, and preferably forming the coated main components with the thickness of 0.5-10 nm; the transparent hole transport layer of the second photovoltaic unit can be a solvent-diluted PEDOT: PSS (PEDOT: PSS) which is a main component and is formed by mixing a polymer containing a plurality of EDOT (3,4-ethylenedioxythiophene monomers) and a plurality of sodium-p-styrene sulfonate (PSS), for example, the PSS is formed by diluting with polar solvents (such as alcohol) and the like, drying for 5 minutes in nitrogen atmosphere at 90-140 ℃ through slot coating, and then drying and forming, wherein the thickness is preferably 100-500 nm; the second transparent active layer of the second photovoltaic unit can be P3HT/PCBM, PCPDTBT/PCBM diluted by solvent, wherein P3HT/PCBM is poly (3-hexylthiophene), P3HT (P-type material) polymer semiconductor and poly phenyl-C₆₁Butyric acid methyl ester (phenyl-C)₆₁-butyl acid methyl ester, PCBM (n-type material)), diluted with ortho-xylene, slit coated, dried at 90-140 ℃ for 3 minutes in nitrogen atmosphere, and dried to form, preferably to a thickness of 100-500 nm.

According to the above technical features, the first transparent electrode layer and the second transparent electrode layer may be formed by depositing or sputtering ITO (Indium Tin Oxide), IZO (Indium dotted Oxide) or AZO (Aluminum dotted Oxide) on the transparent substrate, and the thickness is preferably 50 to 200 nm. That is, the first transparent electrode layer and the second transparent electrode layer may be an ITO layer, an IZO layer, or an AZO layer.

According to the above technical features, the first transparent conductive layer is formed by evaporation of Ag, Au, Pt or Pd, and the thickness is preferably 50-200 nm. That is, the first transparent conductive layer is an Ag layer, an Au layer, a Pt layer, or a Pd layer.

According to the above technical characteristics, the second transparent conductive layer is formed by evaporation of Ag, Au, Pt or Pd, and the thickness is preferably 50-200 nm. That is, the second transparent conductive layer is an Ag layer, an Au layer, a Pt layer, or a Pd layer.

According to the above technical features, the optical hardening layer can be one of acryl, epoxy resin, silicon dioxide or a combination thereof, and the thickness is preferably 1 μm to 5 μm. That is, the optical hardening layer is one of an acrylic layer, an epoxy layer, a silica layer or a combination thereof.

According to the above technical features, the first insulating layer and the second insulating layer can be formed by printing and coating a polyester polymer (polyester polymer) and drying the polyester polymer with hot air at 90-140 ℃ for 10 minutes. That is, the first insulating layer and the second insulating layer are polyester polymer layers.

The utility model discloses composite photovoltaic structure's manufacturing method, including the following step: a. building a transparent electrode layer material, providing a transparent substrate, and arranging the transparent electrode layer material with a preset thickness on the surface of the transparent substrate; b. building a first photovoltaic unit, sequentially building materials of each layer of the first photovoltaic unit on the transparent electrode layer material, enabling a first upper surface layer and a first lower surface layer of the first photovoltaic unit to be a transparent electron transfer layer and a transparent hole transfer layer respectively, and arranging a first transparent active layer between the first upper surface layer and the first lower surface layer of the first photovoltaic unit; c. establishing a first insulating layer, scribing at least one first insulating material channel penetrating through the transparent electrode layer material on the first upper surface layer of the first photovoltaic unit, and filling insulating material in each first insulating material channel to form a first insulating layer in each first insulating material channel, wherein each first insulating layer separates the transparent electrode layer material into a first transparent electrode layer relatively positioned below the first photovoltaic unit and a second transparent electrode layer relatively positioned outside the first photovoltaic unit; d. establishing first transparent conducting layers, etching first transparent conducting material channels from the first upper surface layer of the first photovoltaic unit to the transparent electrode layer material at the side surface positions of the first insulating layers, and covering transparent conducting materials on the first upper surface layer of the first photovoltaic unit and in the first transparent conducting material channels to form a first transparent conducting layer which is covered on the first upper surface layer of the first photovoltaic unit and is electrically connected with the first transparent electrode layer along the side surfaces of the first insulating layers; e. building a second photovoltaic unit, sequentially building materials of each layer of the second photovoltaic unit on the first transparent conducting layer on the top surface of the first photovoltaic unit, enabling a second upper surface layer and a second lower surface layer of the second photovoltaic unit to be respectively a transparent electron transfer layer and a transparent hole transfer layer, and arranging a second transparent active layer between the second upper surface layer and the second lower surface layer of the second photovoltaic unit; f, building a second insulating layer, scribing at least one second insulating material channel penetrating to the transparent electrode layer material on the second upper surface layer of the second photovoltaic unit, and filling insulating material in each second insulating material channel to form a second insulating layer in each second insulating material channel; g. establishing second transparent conductive layers, scribing second transparent conductive material channels from the second upper surface layer of the second photovoltaic unit to the transparent electrode layer material at the side surface positions of the second insulating layers, and covering transparent conductive materials on the second upper surface layer of the second photovoltaic unit and in the second transparent conductive material channels to form a second transparent conductive layer which is covered on the second upper surface layer of the second photovoltaic unit and is electrically connected with the second transparent electrode layer along the side surface of each second insulating layer; h. and a finished product partition, namely scribing a cutting channel penetrating through the transparent electrode layer material on the surface of the second transparent conductive layer, and further partitioning the second transparent conductive layer material from the transparent substrate to form at least one composite photovoltaic structure which is superposed above a first photovoltaic unit and connected with a second photovoltaic unit in parallel.

According to the technical characteristics, the manufacturing method of the composite photovoltaic structure is characterized in that the plate surface of the transparent substrate is provided with an optical hardening layer, and the transparent electrode layer material is arranged on the optical hardening layer.

According to the above technical features, the first photovoltaic unit and the second photovoltaic unit are organic photovoltaic units; the transparent electron transfer layers of the first photovoltaic unit and the second photovoltaic unit can be formed by coating PEI and PEIE serving as main components through a slit, drying the coated main components for 3 minutes at 90-140 ℃ by hot air, and preferably forming the coated main components with the thickness of 0.5-10 nm; the transparent hole transport layers of the first and second photovoltaic units may be solvent-diluted PEDOT: PSS (PEDOT: PSS) which is a main component and is formed by mixing a polymer containing a plurality of EDOT (3,4-ethylenedioxythiophene monomers) and a plurality of sodium-p-styrene sulfonate (PSS), for example, the PSS is formed by diluting with polar solvents (such as alcohol) and the like, drying for 5 minutes in nitrogen atmosphere at 90-140 ℃ through slot coating, and then drying and forming, wherein the thickness is preferably 100-500 nm; the first transparent active layer and the second transparent active layer can be P3HT/PCBM, PCPDTBT/PCBM diluted by solvent, wherein P3HT/PCBM is poly (3-hexylthiophene), P3HT (P-type material) polymer semiconductor and poly (phenyl-C)₆₁Butyric acid methyl ester (phenyl-C)₆₁-butyl acid methyl ester, PCBM (n-type material)), diluted with ortho-xylene, slit coated, dried at 90-140 ℃ for 3 minutes in nitrogen atmosphere, and dried to form, preferably to a thickness of 100-500 nm.

According to the above technical features, the first photovoltaic unit and the second photovoltaic unit are perovskite photovoltaic units; the transparent electron transport layers of the first and second photovoltaic cells may be formed from PEDOT PSS, Poly (3-phenylene) (P3HT), and Poly (bis (4-phenyl) (2)4, 6-trimetylphenyl) amine) (PTAA) is coated by a slit, dried for 5 minutes at 90-140 ℃ in a nitrogen atmosphere and then dried for forming, and the thickness is preferably 100-500 nm; the transparent hole transfer layer of the first photovoltaic unit and the second photovoltaic unit can be formed by diluting main components containing PDPP3T, namely PCBM with a solvent, coating the main components with a slit, drying the main components for 5 minutes in a nitrogen atmosphere at 90-140 ℃ and drying the main components for forming, wherein the thickness is preferably 1-100 nm; the first transparent active layer of the first photovoltaic unit and the second transparent active layer of the second photovoltaic unit can be respectively composed of CH₃NH₃PbI₃、CsPbBr₃、CsPbI₃、FAPbI₃、FAPbBr₃One or a combination of the two is diluted by a solvent, and then dried for 5 minutes in a nitrogen atmosphere at 90-140 ℃ by slit coating, and then dried and formed, wherein the thickness is preferably 200-800 nm.

According to the above technical features, the first photovoltaic unit is an organic photovoltaic unit, and the second photovoltaic unit is a perovskite photovoltaic unit; the transparent electron transfer layer of the first photovoltaic unit can be formed by coating PEI and PEIE serving as main components through a slit, drying the coated main components for 3 minutes at 90-140 ℃ by hot air, and preferably forming the coated main components with the thickness of 0.5-10 nm; the transparent hole transport layer of the first photovoltaic unit can be a solvent-diluted PEDOT: PSS (PEDOT: PSS) which is a main component and is formed by mixing a polymer containing a plurality of EDOT (3,4-ethylenedioxythiophene monomers) and a plurality of sodium-p-styrene sulfonate (PSS), for example, the PSS is formed by diluting with polar solvents (such as alcohol) and the like, drying for 5 minutes in nitrogen atmosphere at 90-140 ℃ through slot coating, and then drying and forming, wherein the thickness is preferably 100-500 nm; the first transparent active layer of the first photovoltaic unit can be P3HT/PCBM, PCPDTBT/PCBM diluted by solvent, wherein P3HT/PCBM is poly (3-hexylthiophene), P3HT (P-type material) polymer semiconductor and poly phenyl-C₆₁Butyric acid methyl ester (phenyl-C)₆₁-butyl acid methyl ester, PCBM (n-type material)), diluted with ortho-xylene, slit coated, dried at 90-140 ℃ for 3 minutes in nitrogen atmosphere, and dried to form, preferably 100-500 nm thick; the transparent electron transport layer of the second photovoltaic cell can be made of PEDOT PSS, Poly (3-hexylthiophene) (P3HT) and Poly (bis (4-phenyl) (2,4, 6-trimetylphenyl) amine) (PTAA) is dried for 5 minutes at 90-140 ℃ in nitrogen atmosphere after slit coating, and is dried and formed, and the thickness is preferably 100-500 nm; the transparent hole transfer layer of the second photovoltaic unit can be formed by diluting main components containing PDPP3T, namely PCBM with a solvent, coating with a slit, drying at 90-140 ℃ for 5 minutes in a nitrogen atmosphere, and drying to form the transparent hole transfer layer, wherein the thickness is preferably 1-100 nm; the second transparent active layer of the second photovoltaic unit can be formed of CH₃NH₃PbI₃、CsPbBr₃、CsPbI₃、FAPbI₃、FAPbBr₃One or a combination of the two is diluted by a solvent, and then dried for 5 minutes in a nitrogen atmosphere at 90-140 ℃ by slit coating, and then dried and formed, wherein the thickness is preferably 200-800 nm.

According to the above technical features, the first photovoltaic unit is a perovskite photovoltaic unit, and the second photovoltaic unit is an organic photovoltaic unit; the transparent electron transfer layer of the first photovoltaic unit can be formed by slit coating of PEDOT, PSS, Poly (3-hexylthiophene) (P3HT) and Poly (bis (4-phenyl) (2,4, 6-trimetylphenyl) amine) (PTAA), drying at 90-140 ℃ for 5 minutes in nitrogen atmosphere, and drying to a thickness of 100-500 nm; the transparent hole transfer layer of the first photovoltaic unit can be formed by diluting main components containing PDPP3T, namely PCBM with a solvent, coating with a slit, drying at 90-140 ℃ for 5 minutes in a nitrogen atmosphere, and drying to form the transparent hole transfer layer, wherein the thickness is preferably 1-100 nm; the first transparent active layer of the first photovoltaic unit can be formed of CH₃NH₃PbI₃、CsPbBr₃、CsPbI₃、FAPbI₃、FAPbBr₃One or the combination of the two is diluted by a solvent, and then dried for 5 minutes in a nitrogen atmosphere at 90-140 ℃ by slit coating, and then dried and formed, wherein the thickness is preferably 200-800 nm; the transparent electron transfer layer of the second photovoltaic unit can be formed by coating PEI and PEIE serving as main components through a slit, drying the coated main components for 3 minutes at 90-140 ℃ by hot air, and preferably forming the coated main components with the thickness of 0.5-10 nm; the transparent hole transport layer of the second photovoltaic unit can be a solvent-diluted PEDOT: PSS (PEDOT: PSS) as main component, which is prepared by mixing a polymer containing a plurality of EDOT (3,4-ethylenedioxythiophene monomer) and a plurality of sodium-p-styrene sulfonate (PSS), diluting with polar solvent (such as alcohol) and coating with 90-140 deg.C through a slitDrying for 5 minutes in nitrogen atmosphere, and then drying and forming, wherein the thickness is preferably 100-500 nm; the second transparent active layer of the second photovoltaic unit can be solvent-diluted P3HT/PCBM, PCPDTBT/PCBM, wherein P3HT/PCBM is poly (3-hexylthiophene), P3HT (P-type material) polymer semiconductor and poly phenyl-C₆₁Butyric acid methyl ester (phenyl-C)₆₁-butyl acid methyl ester, PCBM (n-type material)), diluted with ortho-xylene, slit coated, dried at 90-140 ℃ for 3 minutes in nitrogen atmosphere, and dried to form, preferably to a thickness of 100-500 nm.

According to the above technical features, the transparent electrode layer material can be formed by evaporating or sputtering ITO, IZO or AZO onto the transparent substrate, and the thickness is preferably 50-200 nm.

According to the above technical features, the first transparent conductive layer is formed by evaporation of Ag, Au, Pt or Pd, and the thickness is preferably 50-200 nm.

According to the above technical characteristics, the second transparent conductive layer is formed by evaporation of Ag, Au, Pt or Pd, and the thickness is preferably 50-200 nm.

According to the above technical features, the optical hardening layer can be one of acryl, epoxy resin, silicon dioxide or a combination thereof, and the thickness is preferably 1 μm to 5 μm.

According to the above technical features, the first insulating layer and the second insulating layer can be formed by printing and coating a polyester polymer (polyester polymer) and drying the polyester polymer with hot air at 90-140 ℃ for 10 minutes.

The utility model discloses produced technological effect: the utility model discloses a compound photovoltaic structure mainly utilizes and sets up the parallelly connected first of each other superpose, the technical characterstic of second photovoltaic unit on the transparent substrate, can promote omnidirectional spotlight gain photoelectric reaction area by a wide margin under the condition that does not influence overall structure thickness, effectively increases the amperage, and not only the processing procedure is with low costs, and accords with the application demand of little volume product relatively.

Drawings

Fig. 1 is a cross-sectional view of a conventional photovoltaic structure.

Fig. 2 is a cross-sectional view of a composite photovoltaic structure according to a first embodiment of the present invention.

Fig. 3 is a cross-sectional view of a composite photovoltaic structure according to a second embodiment of the present invention.

Fig. 4 is a basic flow chart of a manufacturing method of the composite photovoltaic structure of the present invention.

Fig. 5 is a completed diagram of the transparent electrode layer material of the present invention.

Fig. 6 is the completed diagram of the first photovoltaic unit in the middle of the utility model.

Fig. 7 is a completed view of the first insulating layer in the present invention.

Fig. 8 is a completed diagram of the first transparent conductive layer of the present invention.

Fig. 9 is a completed diagram of the second photovoltaic unit of the present invention.

Fig. 10 is a completed diagram of the second insulating layer according to the present invention.

Fig. 11 is a completed diagram of the second transparent conductive layer of the present invention.

Fig. 12 is a diagram of the completed image of the first transparent electrode layer and the second transparent electrode layer of the present invention.

Description of the figure numbers:

Prior Art

11 transparent substrate

12 photovoltaic unit

121 lower surface layer

122 transparent active layer

123 upper surface layer

131 first transparent electrode layer

132 second transparent electrode layer

141 transparent conductive layer

142 insulating layer

[ the utility model ]

20 transparent substrate

21 first insulating material channel

22 first transparent conductive material channel

23 passage of a second insulating material

24 second transparent conductive material channel

25 cutting channel

30 first photovoltaic unit

31 first lower surface layer

32 first transparent active layer

33 first upper surface layer

40 second photovoltaic unit

41 second lower skin

42 second transparent active layer

43 second upper surface layer

50 transparent electrode layer material

51 first transparent electrode layer

52 second transparent electrode layer

61 first transparent conductive layer

62 second transparent conductive layer

71 first insulating layer

72 second insulating layer

80 optically hardening layer.

Detailed Description

The utility model mainly provides a composite photovoltaic structure which can greatly improve the omnibearing condensation gain photoelectric reaction area, effectively increase the current amount, does not influence the thickness of the whole structure and has low manufacturing process cost, as shown in figure 2, the composite photovoltaic structure of the utility model is provided with a first photovoltaic unit 30 on a transparent substrate 20, and a second photovoltaic unit 40 which is connected with the first photovoltaic unit 30 in parallel is superposed above the first photovoltaic unit 30; wherein the first photovoltaic unit 30 comprises a first lower surface layer 31, a first transparent active layer 32 and a first upper surface layer 33; the second photovoltaic unit 40 includes a second lower surface layer 41, a second transparent active layer 42, and a second upper surface layer 43; the first upper surface layer 33 and the second upper surface layer 43 are respectively a transparent electron transport layer, the first lower surface layer 31 and the second lower surface layer 41 are respectively a transparent hole transport layer, and the first transparent active layer 32 is disposed between the first upper surface layer 33 and the first lower surface layer 31; the second transparent active layer 42 is disposed between the second upper surface layer 43 and the second lower surface layer 41.

A first transparent electrode layer 51 and a second transparent electrode layer 52 which form insulation are arranged on the plate surface of the transparent substrate 20, and the first photovoltaic unit 30 is arranged on the second transparent electrode layer 52 in a state that the first lower surface layer 31 of the first photovoltaic unit is contacted with the second transparent electrode layer 52; the first photovoltaic unit 30 has a first transparent conductive layer 61 covering the first upper surface layer 33 and electrically connected to the first transparent electrode layer 51.

The second photovoltaic unit 40 is disposed on the first transparent conductive layer 61 in a manner that the second lower surface layer 41 thereof is in contact with the first transparent conductive layer 61; the second upper surface layer 43 of the second photovoltaic unit 40 is covered with a second transparent conductive layer 62 electrically connected to the second transparent electrode layer 52.

The first transparent conductive layer 61 extends to the first transparent electrode layer 51 along the side surface of the first photovoltaic unit 30, and a first insulating layer 71 is disposed between the side surface of the first photovoltaic unit 30 and the first transparent conductive layer 61; the second transparent conductive layer 62 extends to the second transparent electrode layer 52 along the side of the second photovoltaic cell 40, the side of the first transparent conductive layer 61 and the side of the first photovoltaic cell 30, and a second insulating layer 72 is disposed between the side of the second photovoltaic cell (40), the side of the first transparent conductive layer 61 and the side of the first photovoltaic cell 30 and the second transparent conductive layer 62.

In principle, the utility model discloses a compound photovoltaic structure, when practical application, can establish ties the compound photovoltaic structure that the quantity is unequal for the photovoltaic cell group body, and constitute aluminium oxide or silica with ALD (atomic layer deposition) spraying and carry out the deposit separation and reach the air lock encapsulation, or utilize transparent packaging material such as glass substrate or transparent plastic board to accomplish the air lock encapsulation, can utilize and set up the parallelly connected first of mutual superpose on the transparent substrate 20, second

photovoltaic unit

30, 40's design, under the condition that does not influence overall structure thickness, promote omnidirectional spotlight gain photoelectric reaction area by a wide margin, effectively increase the amperage, the processing procedure is with low costs, and accord with the application demand of little volume product relatively. The transparent substrate 20 may be transparent glass or a transparent plastic film, such as a transparent PET (polyester) film.

Furthermore, as shown in fig. 3, the composite photovoltaic structure of the present invention further includes an optical hardening layer 80 disposed between the surface of the transparent substrate 20 and the first transparent electrode layer 51 and the second transparent electrode layer 52; in practice, the optical hardening layer 80 may be one or a combination of acryl, epoxy resin, and silicon dioxide, and the thickness is preferably 1 μm to 5 μm, and the mechanical structure strength of the overall composite photovoltaic structure can be increased by the arrangement of the optical hardening layer 80.

The composite photovoltaic structure of the present invention, when implemented, can be presented in an implementation manner that the first photovoltaic unit 30 and the second photovoltaic unit 40 are organic photovoltaic units; or the first photovoltaic unit 30 and the second photovoltaic unit 40 are perovskite photovoltaic units; or the first photovoltaic unit 30 is an organic photovoltaic unit and the second photovoltaic unit 40 is a perovskite photovoltaic unit; or the first photovoltaic unit 30 is a perovskite photovoltaic unit and the second photovoltaic unit 40 is an organic photovoltaic unit.

As for the first upper surface layer 31 of the first photovoltaic cell 30 and the second upper surface layer 41 of the second photovoltaic cell 40, which are transparent electron transport layers or transparent hole transport layers, respectively, the adjustment can be made according to the actual electrode configuration.

The composite photovoltaic structure of the present invention is implemented in a state where the first photovoltaic unit 30 and the second photovoltaic unit 40 are organic photovoltaic units; the transparent electron transfer layer of the first photovoltaic unit 30 and the second photovoltaic unit 40 can be formed by slit coating PEI or PEIE as a main component, drying with hot air at 90-140 ℃ for 3 minutes, and preferably having a thickness of 0.5-10 nm; the transparent hole transport layers of the first photovoltaic cell 30 and the second photovoltaic cell 40 may be solvent-diluted PEDOT: PSS (namely formed by mixing PEDOT and PSS) as main components, a polymer containing a plurality of EDOT (3,4-ethylenedioxythiophene monomer) and a plurality of sodium-p-styrene sulfonate (PSS) are mixed, for example, the PSS is diluted by polar solvents such as alcohols and the like (such as ethanol), dried for 5 minutes in nitrogen atmosphere at 90-140 ℃ by slit coating, dried and formed, and the thickness is 100-500 nmPreferably; the first transparent active layer 32 and the second transparent active layer 42 can be P3HT/PCBM (P3HT mixed with PCBM), PCPDTBT/PCBM (PCPDTBT mixed with PCBM) diluted by solvent, wherein P3HT/PCBM is poly (3-hexylthiophene), P3HT (P-type material)) polymer semiconductor and poly (phenyl-C)₆₁Butyric acid methyl ester (phenyl-C)₆₁-butyl acid methyl ester, PCBM (n-type material)), diluted with o-xylene, slit coated, dried at 90-140 ℃ for 3 minutes in nitrogen atmosphere, and dried to form, preferably to a thickness of 100-500 nm.

The composite photovoltaic structure of the present invention is implemented in a state where the first photovoltaic unit 30 and the second photovoltaic unit 40 are perovskite photovoltaic units; the transparent electron transport layer of the first photovoltaic unit 30 and the second photovoltaic unit 40 can be made of PEDOT, PSS (mixture of PEDOT and PSS), Poly (3-hexylthiophene) (P3HT) or Poly (bis (4-phenyl) (2,4, 6-trimetylphenyl) amine) (PTAA), which is slit coated, dried at 90-140 ℃ for 5 minutes in nitrogen atmosphere, and dried to form, preferably to a thickness of 100-500 nm; the transparent hole transport layer of the first photovoltaic unit 30 and the second photovoltaic unit 40 may be formed by diluting a main component containing PDPP3T: PCBM (mixture of PDPP3T and PCBM) with a solvent, slit-coating, drying at 90-140 ℃ for 5 minutes in a nitrogen atmosphere, and drying to form a film with a thickness of 1-100 nm; the first transparent active layer 32 and the second transparent active layer 42 can be formed of CH₃NH₃PbI₃、 CsPbBr₃、CsPbI₃、FAPbI₃、FAPbBr₃One or the combination of the two is diluted by a solvent, and then dried for 5 minutes in a nitrogen atmosphere at 90-140 ℃ by slit coating, and then dried and formed, wherein the thickness is preferably 200-800 nm.

In the composite photovoltaic structure of the present invention, the first photovoltaic unit 30 is an organic photovoltaic unit, and the second photovoltaic unit 40 is a perovskite photovoltaic unit; the transparent electron transfer layer of the first photovoltaic unit 30 can be formed by slit coating PEI or PEIE as a main component, drying with hot air at 90-140 ℃ for 3 minutes, and preferably having a thickness of 0.5-10 nm; the transparent hole transport layer of the first photovoltaic unit 30 can be a solvent-diluted PEDOT: PSS as the major component (PEDOT: PS)S) is formed by mixing a polymer containing a plurality of EDOT (3,4-ethylenedioxythiophene monomer) and a plurality of sodium-p-styrene sulfonate (PSS), for example, the EDOT is diluted by alcohol and other polar solvents (such as ethanol), and then the EDOT and the PSS are dried for 5 minutes in a nitrogen atmosphere at 90-140 ℃ through slot coating, and then the drying and forming are carried out, wherein the thickness is preferably 100-500 nm; the first transparent active layer 32 of the first photovoltaic cell 30 may be solvent-diluted P3HT/PCBM, PCPDTBT/PCBM, wherein the P3HT/PCBM is a poly (3-hexylthiophene), P3HT (P-type material) polymer semiconductor and a poly (phenyl-C)₆₁Butyric acid methyl ester (phenyl-C)₆₁-butyl acid methyl ester, PCBM (n-type material)), diluted with ortho-xylene, slit coated, dried at 90-140 ℃ for 3 minutes in nitrogen atmosphere, and dried to form, preferably 100-500 nm thick; the transparent electron transport layer of the second photovoltaic unit 40 may be formed by slit coating of PEDOT, PSS, Poly (3-hexylthiophene) (P3HT) or Poly (bis (4-phenyl) (2,4, 6-trimetylphenyl) amine) (PTAA), drying at 90-140 deg.C for 5 minutes in nitrogen atmosphere, and drying to a thickness of 100-500 nm; the transparent hole transport layer of the second photovoltaic unit 40 may be formed by diluting a main component containing PDPP3T: PCBM (mixture of PDPP3T and PCBM) with a solvent, slit-coating, drying at 90-140 deg.C for 5 min in nitrogen atmosphere, and drying to form a film with a thickness of 1-100 nm; the second transparent active layer 42 of the second photovoltaic unit 40 may be formed of CH₃NH₃PbI₃、CsPbBr₃、CsPbI₃、FAPbI₃、FAPbBr₃One or a combination of the two is diluted by a solvent, and then dried for 5 minutes in a nitrogen atmosphere at 90-140 ℃ by slit coating, and then dried and formed, wherein the thickness is preferably 200-800 nm.

In the composite photovoltaic structure of the present invention, the first photovoltaic unit 30 is a perovskite photovoltaic unit, and the second photovoltaic unit 40 is an organic photovoltaic unit; the transparent electron transport layer of the first photovoltaic unit 30 may be formed by slit coating of PEDOT, PSS, Poly (3-hexylthiophene) (P3HT) or Poly (bis (4-phenyl) (2,4, 6-trimetylphenyl) amine) (PTAA), drying at 90-140 deg.C for 5 minutes in nitrogen atmosphere, and drying to a thickness of 100-500 nm; the transparent hole transport layer of the first photovoltaic cell 30 can beThe coating is prepared by diluting the main component containing PDPP3T, namely PCBM with a solvent, coating the solution by a slit, drying the coated solution for 5 minutes in a nitrogen atmosphere at 90-140 ℃, and drying and forming the coated solution, wherein the thickness is preferably 1-100 nm; the first transparent active layer 32 of the first photovoltaic unit 30 may be formed of CH₃NH₃PbI₃、CsPbBr₃、CsPbI₃、FAPbI₃、FAPbBr₃One or a mixture of the two is diluted by a solvent, and then dried for 5 minutes in a nitrogen atmosphere at 90-140 ℃ by slit coating, and then dried and formed, wherein the thickness is preferably 200-800 nm; the transparent electron transfer layer of the second photovoltaic unit 40 can be formed by slit coating PEI and PEIE as main components, drying with hot air at 90-140 ℃ for 3 minutes, and preferably having a thickness of 0.5-10 nm; the transparent hole transport layer of the second photovoltaic unit 40 can be a solvent-diluted PEDOT: PSS (PEDOT: PSS) which is a main component and is formed by mixing a polymer containing a plurality of EDOT (3,4-ethylenedioxythiophene monomers) and a plurality of sodium-p-styrene sulfonate (PSS), for example, the PSS is formed by diluting with polar solvents (such as alcohol) and the like, drying for 5 minutes in nitrogen atmosphere at 90-140 ℃ through slot coating, and then drying and forming, wherein the thickness is preferably 100-500 nm; the second transparent active layer 42 of the second photovoltaic unit 40 can be solvent-diluted P3HT/PCBM, PCPDTBT/PCBM, wherein P3HT/PCBM is a poly (3-hexylthiophene), P3HT (P-type material) polymer semiconductor and a poly (phenyl-C)₆₁Butyric acid methyl ester (phenyl-C)₆₁-butyl acid methyl ester, PCBM (n-type material)), diluted with o-xylene, slit coated, dried at 90-140 ℃ for 3 minutes in nitrogen atmosphere, and dried to form, preferably to a thickness of 100-500 nm.

The utility model discloses a compound photovoltaic structure, when implementing, this first transparent electrode layer 51 and this second transparent electrode layer 52 can be by ITO, IZO or AZO through the coating by vaporization or sputter in this transparent substrate 20, and thickness uses 50 ~ 200nm as being good.

The utility model discloses a compound photovoltaic structure, when implementing, this first transparent conducting layer 61 constitutes through the coating by vaporization with Ag, Au, Pt or Pd, and thickness uses 50 ~ 200nm as being good.

The utility model discloses a compound photovoltaic structure, when implementing, this second transparent conducting layer 62 constitutes through the coating by vaporization with Ag, Au, Pt or Pd, and thickness uses 50 ~ 200nm as being good.

The utility model discloses a compound photovoltaic structure, when implementing, this first insulating layer 71 and this second insulating layer 72 can be formed by polyester high molecular polymer (Polyesters polymer) to the printing coating is dried 10 minutes after drying under 90 ~ 140 ℃ of hot-blast.

The utility model discloses a composite photovoltaic structure manufacturing approach is further revealed, as shown in fig. 4 to 12, the utility model discloses composite photovoltaic structure's manufacturing approach, including the following step.

a. The transparent electrode layer material 50 is built, a transparent substrate 20 is provided, and a transparent electrode layer material 50 with a predetermined thickness is disposed on the surface of the transparent substrate 20.

b. The first photovoltaic unit 30 is built, each layer of material of the first photovoltaic unit 30 is sequentially built on the transparent electrode layer material 50, the first upper surface layer 33 and the first lower surface layer 31 of the first photovoltaic unit 30 are respectively a transparent electron transfer layer and a transparent hole transfer layer, and a first transparent active layer 32 is arranged between the first upper surface layer 33 and the first lower surface layer 31 of the first photovoltaic unit 30.

c. A first insulating layer 71 is established, at least one first insulating material channel 21 penetrating through the transparent electrode layer material 50 is scribed on the first upper surface layer 33 of the first photovoltaic unit 30 by a scribing means, and an insulating material is filled in each first insulating material channel 21, so that a first insulating layer 71 is formed in each first insulating material channel 21, and each first insulating layer 71 separates the transparent electrode layer material 50 into a first transparent electrode layer 51 relatively positioned below the first photovoltaic unit 30 and a second transparent electrode layer 52 relatively positioned outside the first photovoltaic unit 30. Wherein the scribing means is laser etched, for example, laser etched on the first upper surface layer 33 of the first photovoltaic unit 30 to scribe at least one first insulating material channel 21 penetrating the transparent electrode layer material (50).

d. The first transparent conductive layers 61 are built, the first transparent conductive material channels 22 penetrating from the first upper surface layer 33 of the first photovoltaic unit 30 to the transparent electrode layer material 50 are scribed at the side positions of the first insulating layers 71 by the scribing means, and the transparent conductive material is coated on the surface of the first upper surface layer 33 of the first photovoltaic unit 30 and in each of the first transparent conductive material channels 22, so that the first transparent conductive layers 61 which are coated on the first upper surface layer 33 of the first photovoltaic unit 30 and electrically connected with the first transparent electrode layer 51 along the side surfaces of the first insulating layers 71 are formed.

e. A second photovoltaic unit 40 is built, each layer of material of the second photovoltaic unit 40 is sequentially built on the first transparent conductive layer 61 on the top surface of the first photovoltaic unit 30, the second upper surface layer 43 and the second lower surface layer 41 of the second photovoltaic unit 40 are respectively a transparent electron transport layer and a transparent hole transport layer, and a second transparent active layer 42 is disposed between the second upper surface layer 43 and the second lower surface layer 41 of the second photovoltaic unit 40.

f. A second insulating layer 72 is formed, at least one second insulating material channel 23 penetrating to the transparent electrode layer material 50 is scribed on the second upper surface layer 43 of the second photovoltaic unit 40 by the scribing means, and the second insulating material channel 23 is filled with an insulating material, so that a second insulating layer 72 is formed in each second insulating material channel 23.

g. Establishing a second transparent conductive layer 62, scribing a second transparent conductive material channel 24 from the second upper surface layer 43 of the second photovoltaic unit 40 to the transparent electrode layer material 50 at the side position of each second insulating layer 72 by the scribing means, and covering the surface of the second upper surface layer 43 of the second photovoltaic unit 40 and each second transparent conductive material channel 24 with a transparent conductive material, so as to form a second transparent conductive layer 62 covering the second upper surface layer 43 of the second photovoltaic unit 40 and electrically connected with the second transparent electrode layer 52 along the side surface of each second insulating layer 72.

h. The finished product is divided into a cutting channel 25 penetrating the transparent electrode layer material 50 on the surface of the second transparent conductive layer 62 by the scribing means, and further divided into a composite photovoltaic structure (as shown in fig. 2) built on the transparent substrate 20 and formed at least one first photovoltaic unit 30 and a second photovoltaic unit 40 in parallel stacked above the first photovoltaic unit.

Similarly, in the manufacturing method of the composite photovoltaic structure of the present invention, when implemented, an optical hardening layer 80 (as shown in fig. 3) may be further disposed on the surface of the transparent substrate 20, and the transparent electrode layer material 50 is disposed on the optical hardening layer 80; in practice, the optical hardening layer 80 may be one or a combination of acryl, epoxy resin, and silicon dioxide, and the thickness is preferably 1 μm to 5 μm, and the mechanical structure strength of the overall composite photovoltaic structure is increased by the arrangement of the optical hardening layer 80.

The manufacturing method of the composite photovoltaic structure of the present invention can be implemented by using the first photovoltaic unit 30 and the second photovoltaic unit 40 as the implementation mode of the organic photovoltaic unit; or the first photovoltaic unit 30 and the second photovoltaic unit 40 are perovskite photovoltaic units; or the first photovoltaic unit 30 is an organic photovoltaic unit and the second photovoltaic unit 40 is a perovskite photovoltaic unit; or the first photovoltaic unit 30 is a perovskite photovoltaic unit and the second photovoltaic unit 40 is an organic photovoltaic unit.

The manufacturing method of the composite photovoltaic structure of the present invention is implemented in a manner that the first photovoltaic unit 30 and the second photovoltaic unit 40 are organic photovoltaic units; the transparent electron transfer layers of the first photovoltaic unit 30 and the second photovoltaic unit 40 can be formed by slit coating PEI and PEIE as main components, drying with hot air at 90-140 ℃ for 3 minutes, and forming, wherein the thickness is preferably 0.5-10 nm; the transparent hole transport layer of the first photovoltaic unit (30) and the second photovoltaic unit 40 may be a solvent-diluted PEDOT: PSS (PEDOT: PSS) which is a main component and is formed by mixing a polymer containing a plurality of EDOT (3,4-ethylenedioxythiophene monomers) and a plurality of sodium-p-styrene sulfonate (PSS), for example, the PSS is formed by diluting with polar solvents (such as alcohol) and the like, drying for 5 minutes in nitrogen atmosphere at 90-140 ℃ through slot coating, and then drying and forming, wherein the thickness is preferably 100-500 nm; the first transparent active layer 32 and the second transparent active layer 42 can be P3HT/PCBM, PCPDTBT/PCBM diluted by solvent, wherein P3HT/PCBM is a poly (3-hexylthiophene), P3HT (P-type material) polymer semi-polymer with a plurality of poly (3-hexylthiophene)Conductor and a plurality of phenyl-C₆₁Butyric acid methyl ester (phenyl-C)₆₁-butyl acid methyl ester, PCBM (n-type material)), diluted with o-xylene, slit coated, dried at 90-140 ℃ for 3 minutes in nitrogen atmosphere, and dried to form, preferably to a thickness of 100-500 nm.

The manufacturing method of the composite photovoltaic structure of the present invention is implemented in a manner that the first photovoltaic unit 30 and the second photovoltaic unit 40 are perovskite photovoltaic units; the transparent electron transport layer of the first photovoltaic unit 30 and the second photovoltaic unit 40 can be formed by slit coating of PEDOT, PSS, Poly (3-hexylthiophene) (P3HT) or Poly (bis (4-phenyl) (2,4, 6-trimethyphenyl) amine) (PTAA), drying at 90-140 ℃ for 5 minutes in nitrogen atmosphere, preferably 100-500 nm; the transparent hole transport layer of the first photovoltaic unit 30 and the second photovoltaic unit 40 can be PDPP3T, wherein PCBM is diluted by a solvent, coated by a slit, dried at 90-140 ℃ for 5 minutes in a nitrogen atmosphere, and dried to form, and the thickness is preferably 1-100 nm; the first transparent active layer 32 and the second transparent active layer 42 can be formed of CH₃NH₃PbI₃、CsPbBr₃、CsPbI₃、 FAPbI₃、FAPbBr₃One or a combination of the two is diluted by a solvent, and then dried for 5 minutes in a nitrogen atmosphere at 90-140 ℃ by slit coating, and then dried and formed, wherein the thickness is preferably 200-800 nm.

The utility model discloses a manufacturing method of composite photovoltaic structure, under the implementation mode that the first photovoltaic unit 30 is an organic photovoltaic unit and the second photovoltaic unit 40 is a perovskite photovoltaic unit; the transparent electron transfer layer of the first photovoltaic unit 30 can be formed by slit coating PEI or PEIE as a main component, drying with hot air at 90-140 ℃ for 3 minutes, and preferably having a thickness of 0.5-10 nm; the transparent hole transport layer of the first photovoltaic unit 30 can be a solvent-diluted PEDOT: PSS (PEDOT: PSS) as a main component, which is formed by mixing a polymer containing a plurality of EDOT (3,4-ethylenedioxythiophene monomers) and a plurality of sodium-p-styrene sulfonate (PSS), for example, diluting with alcohol and other polar solvents (such as ethanol), coating by a slit, drying for 5 minutes at 90-140 ℃ in a nitrogen atmosphere, and then drying to form the product with the thickness of 100 ℃Preferably 500 nm; the first transparent active layer 32 of the first photovoltaic cell 30 may be solvent-diluted P3HT/PCBM, PCPDTBT/PCBM, wherein the P3HT/PCBM is a poly (3-hexylthiophene), P3HT (P-type material) polymer semiconductor and a poly (phenyl-C)₆₁Butyric acid methyl ester (phenyl-C)₆₁-butyl acid methyl ester, PCBM (n-type material)), diluted with ortho-xylene, slit coated, dried at 90-140 ℃ for 3 minutes in nitrogen atmosphere, and dried to form, preferably 100-500 nm thick; the transparent electron transport layer of the second photovoltaic unit 40 may be formed by slit coating of PEDOT, PSS, Poly (3-hexylthiophene) (P3HT) or Poly (bis (4-phenyl) (2,4, 6-trimetylphenyl) amine) (PTAA), drying at 90-140 deg.C for 5 minutes in nitrogen atmosphere, and drying to a thickness of 100-500 nm; the transparent hole transfer layer of the second photovoltaic unit 40 can be formed by diluting the main component containing PDPP3T, PCBM, with solvent, coating with slit, drying at 90-140 deg.C under nitrogen atmosphere for 5 min, and drying to form a film with a thickness of 1-100 nm; the second transparent active layer 42 of the second photovoltaic unit 40 may be formed of CH₃NH₃PbI₃、CsPbBr₃、CsPbI₃、FAPbI₃、FAPbBr₃One or a combination of the two is diluted by a solvent, and then dried for 5 minutes in a nitrogen atmosphere at 90-140 ℃ by slit coating, and then dried and formed, wherein the thickness is preferably 200-800 nm.

The utility model discloses a manufacturing method of composite photovoltaic structure, under the implementation mode that the first photovoltaic unit 30 is a perovskite photovoltaic unit and the second photovoltaic unit 40 is an organic photovoltaic unit; the transparent electron transport layer of the first photovoltaic unit 30 may be formed by slit coating of PEDOT, PSS, Poly (3-hexylthiophene) (P3HT) or Poly (bis (4-phenyl) (2,4, 6-trimetylphenyl) amine) (PTAA), drying at 90-140 deg.C for 5 minutes in nitrogen atmosphere, and drying to a thickness of 100-500 nm; the transparent hole transfer layer of the first photovoltaic unit 30 may be formed by diluting the main component containing PDPP3T, PCBM, with solvent, coating with slit, drying at 90-140 deg.C under nitrogen atmosphere for 5 min, and drying to form a film with a thickness of 1-100 nm; the first transparent active layer 32 of the first photovoltaic unit 30 may be formed of CH₃NH₃PbI₃、CsPbBr₃、CsPbI₃、FAPbI₃、FAPbBr₃One or a mixture of the two is diluted by a solvent, and then dried for 5 minutes in a nitrogen atmosphere at 90-140 ℃ by slit coating, and then dried and formed, wherein the thickness is preferably 200-800 nm; the transparent electron transfer layer of the second photovoltaic unit 40 can be formed by slit coating PEI and PEIE as main components, drying with hot air at 90-140 ℃ for 3 minutes, and preferably having a thickness of 0.5-10 nm; the transparent hole transport layer of the second photovoltaic unit 40 can be a solvent-diluted PEDOT: PSS (PEDOT: PSS) which is a main component and is formed by mixing a polymer containing a plurality of EDOT (3,4-ethylenedioxythiophene monomers) and a plurality of sodium-p-styrene sulfonate (PSS), for example, the PSS is formed by diluting with polar solvents (such as alcohol) and the like, drying for 5 minutes in nitrogen atmosphere at 90-140 ℃ through slot coating, and then drying and forming, wherein the thickness is preferably 100-500 nm; the second transparent active layer 42 of the second photovoltaic unit 40 can be solvent-diluted P3HT/PCBM, PCPDTBT/PCBM, wherein P3HT/PCBM is a poly (3-hexylthiophene), P3HT (P-type material) polymer semiconductor and a poly (phenyl-C)₆₁Butyric acid methyl ester (phenyl-C)₆₁-butyl acid methyl ester, PCBM (n-type material)), diluted with o-xylene, slit coated, dried at 90-140 ℃ for 3 minutes in nitrogen atmosphere, and dried to form, preferably to a thickness of 100-500 nm.

In the manufacturing method of the composite photovoltaic structure of the present invention, the transparent electrode layer material 50 can be formed by ITO, IZO or AZO by evaporation or sputtering on the transparent substrate (20), and the thickness is preferably 50-200 nm.

The utility model discloses composite photovoltaic structure's manufacturing approach, when implementing, this first transparent conducting layer 61 constitutes with Ag, Au, Pt or Pd through the coating by vaporization, and thickness is good with 50 ~ 200 nm.

The utility model discloses composite photovoltaic structure's manufacturing approach, when implementing, this second transparent conducting layer 62 constitutes through the coating by vaporization with Ag, Au, Pt or Pd, and thickness is good with 50 ~ 200 nm.

The utility model discloses a composite photovoltaic structure manufacturing method, when implementing, this first insulating layer 71 and this second insulating layer 72 can be formed by polyester high molecular polymer (Polyesters polymer) to the printing coating is dried 10 minutes stoving under the hot-blast temperature of 90 ~ 140 ℃.

Examples 1 to 3, comparative example 1 and the results of the detection. By the composite photovoltaic structure and the manufacturing method thereof, 10 corresponding composite photovoltaic structures (2.5 cm in length and 0.5cm in width) of the embodiments 1 to 3 are respectively manufactured to be connected in series to form a photovoltaic cell assembly; further, 10 photovoltaic cell modules were formed in series in comparative example 1 using the structure shown in fig. 1 of the prior art. Packaging the battery pack with gas barrier film, irradiating with light source at two sides/surface of the substrate to provide 1000lux illumination environment, and measuring open-circuit voltage (V) and short-circuit current (I/cm) converted per unit area²). The detection results are shown in the table I.

Table one.

In embodiment 1, the first photovoltaic unit 30 and the second photovoltaic unit 40 are organic photovoltaic units; in embodiment 2, the first and second

photovoltaic cells

30, 40 are perovskite photovoltaic cells; in embodiment 3, the first photovoltaic unit 30 is an organic photovoltaic unit and the second photovoltaic unit 40 is a perovskite photovoltaic unit. In comparative example 1, a conventional photovoltaic structure using an organic photovoltaic cell was employed. Obviously, the utility model discloses the open circuit voltage of embodiment 1 ~ 3 of composite photovoltaic structure and conversion unit area's short-circuit current are all superior to conventional photovoltaic structure's comparative example 1.

Particularly, the utility model discloses a compound photovoltaic structure mainly utilizes and sets up the parallelly connected first of superpose each other, the technical characterstic of second photovoltaic unit on the transparent substrate, can promote omnidirectional spotlight gain photoelectric reaction area by a wide margin under the condition that does not influence overall structure thickness, effectively increases the amperage, and not only the processing procedure is with low costs, and accords with the application demand of little volume product relatively.

Claims

1. A composite photovoltaic structure, characterized in that a transparent substrate (20) is provided with a first photovoltaic cell (30), above which first photovoltaic cell (30) is superimposed a second photovoltaic cell (40) connected in parallel with the first photovoltaic cell (30); wherein the first photovoltaic cell (30) comprises a first lower skin (31), a first transparent active layer (32) and a first upper skin (33); the second photovoltaic cell (40) comprises a second lower surface layer (41), a second transparent active layer (42) and a second upper surface layer (43); the first upper surface layer (33) and the second upper surface layer (43) are respectively a transparent electron transfer layer, the first lower surface layer (31) and the second lower surface layer (41) are respectively a transparent hole transfer layer, and the first transparent active layer (32) is arranged between the first upper surface layer (33) and the first lower surface layer (31); the second transparent active layer (42) is arranged between the second upper surface layer (43) and the second lower surface layer (41); wherein:

a first transparent electrode layer (51) and a second transparent electrode layer (52) which form insulation are arranged on the plate surface of the transparent substrate (20), and the first photovoltaic unit (30) is arranged on the second transparent electrode layer (52) in a mode that the first lower surface layer (31) of the first photovoltaic unit is contacted with the second transparent electrode layer (52); a first transparent conductive layer (61) electrically connected with the first transparent electrode layer (51) is coated on the first upper surface layer (33) of the first photovoltaic unit (30); the second photovoltaic unit (40) is arranged on the first transparent conductive layer (61) in a mode that the second lower surface layer (41) of the second photovoltaic unit is in contact with the first transparent conductive layer (61); a second transparent conducting layer (62) electrically connected with the second transparent electrode layer (52) is covered on the second upper surface layer (43) of the second photovoltaic unit (40); the first transparent conductive layer (61) extends to the first transparent electrode layer (51) along the side surface of the first photovoltaic unit (30), and a first insulating layer (71) is arranged between the side surface of the first photovoltaic unit (30) and the first transparent conductive layer (61); the second transparent conductive layer (62) extends to the second transparent electrode layer (52) along the side surface of the second photovoltaic unit (40), the side surface of the first transparent conductive layer (61) and the side surface of the first photovoltaic unit (30), and a second insulating layer (72) is arranged between the side surface of the second photovoltaic unit (40), the side surface of the first transparent conductive layer (61) and the side surface of the first photovoltaic unit (30) and the second transparent conductive layer (62).

2. The composite photovoltaic structure of claim 1, wherein an optically hardened layer (80) is disposed between the surface of the transparent substrate (20) and the first transparent electrode layer (51) and the second transparent electrode layer (52).

3. Composite photovoltaic structure according to claim 1 or 2, characterized in that the first photovoltaic unit (30) and the second photovoltaic unit (40) are organic photovoltaic units.

4. A composite photovoltaic structure according to claim 1 or 2, characterized in that the first photovoltaic unit (30) and the second photovoltaic unit (40) are perovskite photovoltaic units.

5. A composite photovoltaic structure according to claim 1 or 2, characterized in that the first photovoltaic unit (30) is an organic photovoltaic unit and the second photovoltaic unit (40) is a perovskite photovoltaic unit.

6. A composite photovoltaic structure according to claim 1 or 2, characterized in that the first photovoltaic unit (30) is a perovskite photovoltaic unit and the second photovoltaic unit (40) is an organic photovoltaic unit.

7. Composite photovoltaic structure according to claim 1 or 2, characterized in that the first photovoltaic unit (30) and the second photovoltaic unit (40) are organic photovoltaic units; the thickness of the transparent electron transfer layer of the first photovoltaic unit (30) and the second photovoltaic unit (40) is 0.5-10 nm; the thickness of the transparent hole transport layer of the first photovoltaic unit (30) and the second photovoltaic unit (40) is 100-500 nm; the thicknesses of the first transparent active layer (32) and the second transparent active layer (42) are 100-500 nm, respectively.

8. A composite photovoltaic structure according to claim 1 or 2, characterized in that the first photovoltaic unit (30) and the second photovoltaic unit (40) are perovskite photovoltaic units; the thickness of the transparent electron transfer layer of the first photovoltaic unit (30) and the second photovoltaic unit (40) is 100-500 nm; the thickness of the transparent hole transport layer of the first photovoltaic unit (30) and the second photovoltaic unit (40) is 1-100 nm; the thicknesses of the first transparent active layer (32) and the second transparent active layer (42) are 200-800 nm, respectively.

9. A composite photovoltaic structure according to claim 1 or 2, characterized in that the first photovoltaic unit (30) is an organic photovoltaic unit and the second photovoltaic unit (40) is a perovskite photovoltaic unit; the thickness of the transparent electron transfer layer of the first photovoltaic unit (30) is 0.5-10 nm; the thickness of the transparent hole transport layer of the first photovoltaic unit (30) is 100-500 nm; the thickness of the first transparent active layer (32) of the first photovoltaic unit (30) is 100-500 nm; the thickness of the transparent electron transfer layer of the second photovoltaic unit (40) is 100-500 nm; the thickness of the transparent hole transport layer of the second photovoltaic unit (40) is 1-100 nm; the second transparent active layer (42) of the second photovoltaic unit (40) has a thickness of 200-800 nm.

10. A composite photovoltaic structure according to claim 1 or 2, characterized in that the first photovoltaic unit (30) is a perovskite photovoltaic unit and the second photovoltaic unit (40) is an organic photovoltaic unit; the thickness of the transparent electron transport layer of the first photovoltaic unit (30) is 100-500 nm; the thickness of the transparent hole transport layer of the first photovoltaic unit (30) is 1-100 nm; the thickness of the first transparent active layer (32) of the first photovoltaic unit (30) is 200-800 nm; the thickness of the transparent electron transfer layer of the second photovoltaic unit (40) is 0.5-10 nm; the thickness of the transparent hole transport layer of the second photovoltaic unit (40) is 100-500 nm; the second transparent active layer (42) of the second photovoltaic unit (40) has a thickness of 100-500 nm.

11. The composite photovoltaic structure according to claim 1 or 2, wherein the first transparent electrode layer (51) and the second transparent electrode layer (52) are ITO layers, IZO layers or AZO layers with a thickness of 50 to 200 nm.

12. The composite photovoltaic structure of claim 1 or 2, wherein the first transparent conductive layer (61) is an Ag layer, an Au layer, a Pt layer or a Pd layer with a thickness of 50-200 nm.

13. The composite photovoltaic structure of claim 1 or 2, wherein the second transparent conductive layer (62) is an Ag layer, an Au layer, a Pt layer or a Pd layer with a thickness of 50-200 nm.

14. The composite photovoltaic structure of claim 2, wherein the optically hardened layer (80) is one or a combination of an acrylic layer, an epoxy layer, and a silicon dioxide layer, and has a thickness of 1 μm to 5 μm.

15. The composite photovoltaic structure of claim 1 or 2, wherein the first insulating layer (71) and the second insulating layer (72) are polyester high polymer layers.