CN218510735U - BEF subassembly and LED backlight unit under enhancement mode - Google Patents

Abstract

The utility model provides a BEF subassembly and LED backlight unit under enhancement mode, the BEF subassembly is with quantum dot membrane (102) under the enhancement mode, BEF prism glue film (103) and diffusion glue film (101) are integrated to present for proposing the great compound die of thickness and intensity together down, for needs assemble quantum dot membrane (102) alone among the current backlight unit, the way of BEF prism glue film (103) and diffusion glue film (101) down, the structure and the assembling process of backlight unit can be simplified, reduce backlight unit's whole thickness, and reduce its cost.

Description

BEF subassembly and LED backlight unit under enhancement mode

Technical Field

The utility model relates to a field of being shaded especially relates to a BEF subassembly and LED backlight unit under enhancement mode.

Background

The Mini LED is based on tiny LED crystal particles as pixel luminous points, is used as a surface light source of a display device, can realize high contrast, high brightness and high color gamut, and can realize high dynamic range image effect by partitioning the surface light source.

The structure of the backlight module also comprises a diffusion film, a QD (Quantum dot) film and a prism sheet which are arranged above the Mini LED surface light source; the light that Mini LED area source jetted out gets into the QD membrane after the diffusion of diffusion barrier, carries out the light colour through the QD membrane and jets into the prism piece after changeing, thereby realizes the gathering of light through the prism piece and realize the brightening. Therefore, the conventional backlight module has a complex overall structure, large thickness, complex assembly process and high cost.

SUMMERY OF THE UTILITY MODEL

In view of the not enough of above-mentioned correlation technique, the utility model aims at providing a BEF subassembly and LED backlight unit under enhancement mode, and the overall structure that aims at solving current backlight unit is complicated, and thickness is great, and the assembling process is loaded down with trivial details, problem with high costs.

In order to solve the technical problem, the utility model provides a BEF subassembly under enhancement mode, the BEF subassembly includes under the enhancement mode:

a quantum dot film 102, the quantum dot film 102 having opposing front and back sides, the back side of the quantum dot film 102 facing the LED light source;

a lower BEF prism glue layer 103 coated on the front surface of the quantum dot film 102 and cured on the front surface of the quantum dot film 102, wherein the lower BEF prism glue layer 103 includes a lower prism BRF glue base layer 1031 and a lower prism layer 1032 which are integrally formed, the lower prism layer 1032 is formed by pressing the lower prism BRF glue base layer 1031 on the lower prism BRF glue base layer 1031 when the lower prism BRF glue base layer 1031 is not cured, the lower prism layer 1032 includes a plurality of prism strips 1033 which are arranged in parallel, the surface of each prism strip 1033 is a smooth surface, and the size of each prism strip 1033 is consistent;

and a diffusion glue layer 101 disposed on the back surface of the quantum dot film 102, wherein diffusion particles for diffusing light are mixed in the diffusion glue layer 101.

The utility model provides a BEF subassembly under enhancement mode, direct coating glue film and machine-shaping BEF prism glue film 103 under on the front of quantum dot membrane 102, and fashioned lower BEF prism glue film 103 includes integrated into one piece's lower prism BRF gum base layer 1031 and lower prism layer 1032, realized the integration with quantum dot membrane 102 and lower BEF prism glue film 103, can simplify the structure and the assembling process of display module assembly, and set up the way of quantum dot membrane 102 and lower prism piece for current equipment alone, still can reduce whole thickness;

the utility model provides a BEF subassembly under enhancement mode still directly sets up diffusion glue film 101 on the back of quantum dot membrane 102 to be integrated as a membrane material with lower prism BRF gum base layer 1031, lower prism layer 1032 and diffusion glue film 101, can further simplify the structure and the assembling process of display module assembly, reduce display module assembly's whole thickness, and reduce its cost.

In an embodiment of the present invention, the diffusion glue layer 101 is directly coated on the back surface of the quantum dot film 102, and is cured and formed on the back surface of the quantum dot film 102. That is, the diffusion paste layer 101 is directly formed on the back surface of the quantum dot film 102, the structure of the BEF assembly under enhancement mode can be further simplified and the overall thickness thereof can be reduced.

In an embodiment of the present invention, the reinforced lower BEF assembly further includes a BLT film 100 disposed between the diffusion glue layer 101 and the back surface of the quantum dot film 102, and an adhesive layer 104 disposed between the back surface of the quantum dot film 102 and the BLT film 100, wherein the BLT film 100 is adhered to the back surface of the quantum dot film 102 through the adhesive layer 104; the arrangement of the BLT film 100 can improve the display brightness of the backlight module;

the diffusion glue layer 101 is directly coated on one surface of the BLT film 100 away from the back surface of the quantum dot film 102, and is cured and molded on one surface of the BLT film 100 away from the back surface of the quantum dot film 102.

In an embodiment of the present invention, the diffusion glue layer 101 is directly coated on the back surface of the quantum dot film 102, and is cured and formed on the back surface of the quantum dot film 102, and a surface of the diffusion glue layer 101 away from the back surface of the quantum dot film 102 is a plane;

the reinforced lower BEF assembly further includes a BLT film 100 adhered directly to a side of the diffuser paste layer 101 away from the back side of the quantum dot film 102 when the quantum dot film 102 is uncured.

The utility model discloses an in an embodiment, BEF subassembly still includes a plurality of units 105 that are in the light that have the light transmissivity under the enhancement mode, a plurality of units 105 that are in the light are located respectively diffusion glue layer 101 is kept away from on the one side at the quantum dot membrane 102 back, and one the unit 105 that is in the light corresponds one LED chip in the LED light source to avoid seeing the LED bright spot in the vision, further promote display effect.

In an embodiment of the present invention, the light blocking units 105 are embedded in the diffusion adhesive layer 101, and are flush with a surface of the diffusion adhesive layer 101 away from the back surface of the quantum dot film 102.

In an embodiment of the present invention, a plurality of concave units are further disposed on a surface of the diffusion adhesive layer 101 away from the back surface of the quantum dot film 102, and one concave unit corresponds to a region between adjacent LED chips in the LED light source; therefore, the diffusion glue adjacent to the concave unit forms a protrusion corresponding to each LED chip, and the protrusion can weaken light rays emitted by each LED chip, so that LED bright spots are prevented from being seen visually, and the display effect is further improved.

In an embodiment of the present invention, at least one of the plurality of the recessed units includes a first recess 1011 near the quantum dot film 102, and a second recess 1012 located on the first recess 1011 and communicating with the first recess 1011, the first recess 1011 and the center point of the second recess 1012 are located on the same center line, and the first recess 1011 is located the projection area on the diffusion adhesive layer 101 is smaller than the projection area on the diffusion adhesive layer 101 of the second recess 1012.

Based on the same inventive concept, the utility model also provides a LED backlight module, LED backlight module includes circuit substrate 2, locates a plurality of miniature LED chips 3 on circuit substrate 2 openly, still includes BEF subassembly under the enhancement mode as above, BEF subassembly is located under the enhancement mode on each miniature LED chip 3, and diffusion glue film 101 is towards each miniature LED chip 3. The enhanced BEF component adopted by the LED backlight module integrates the lower prism BRF gum base layer 1031, the lower prism layer 1032 and the diffusion glue layer 101 into a film material, so that the structure and the assembly process of the display module can be simplified, the overall thickness of the display module is reduced, and the cost of the display module is reduced.

In an embodiment of the present invention, the LED backlight module further includes an upper BEF prism film 4 disposed on the lower BEF prism glue layer 103, so as to further improve the display brightness of the LED backlight module.

Drawings

Fig. 1 is a first schematic structural diagram of an enhanced lower BEF assembly according to an embodiment of the present invention;

fig. 2 is a schematic structural diagram of an enhanced lower BEF assembly according to an embodiment of the present invention;

fig. 3 is a schematic structural diagram of an enhanced lower BEF assembly according to an embodiment of the present invention;

fig. 4 is a schematic structural diagram of an enhanced lower BEF assembly according to an embodiment of the present invention;

fig. 5 is a schematic structural diagram of an enhanced lower BEF assembly according to an embodiment of the present invention;

fig. 6 is a schematic structural view of a backlight module according to an embodiment of the present invention.

Detailed Description

In order to facilitate understanding of the present invention, the present invention will be described more fully hereinafter with reference to the accompanying drawings. The preferred embodiments of the present invention are shown in the drawings. The invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.

The embodiment provides an enhanced BEF assembly, which can greatly simplify the structure and the assembly process of a backlight module when being applied to an LED display module, reduce the overall thickness of the LED backlight module and reduce the cost of the LED backlight module. An example enhanced lower BEF component is illustrated in fig. 1 below, which includes but is not limited to:

the quantum dot film 102, the quantum dot film 102 has a front surface and a back surface opposite to each other, and the back surface of the quantum dot film 102 faces the LED light source; that is, the back surface of the quantum dot film 102 in this example is used as the light incident surface of the quantum dot film 102. The front surface of the quantum dot film 102 is used as a light emitting surface of the quantum dot film 102. The quantum dot film in this example can adopt, but is not limited to, various existing quantum dot films, which can include quantum dots of corresponding types and materials as required, and convert light incident from the light incident surface into light of a target color and emit the light through the light emitting surface.

Referring to fig. 1, the enhanced lower BEF assembly in this embodiment further includes a lower BEF prism glue layer 103 coated on the front surface of the quantum dot film 102 and cured on the front surface of the quantum dot film 102; that is, the lower BEF prism glue layer 103 is directly adhered to the front surface of the quantum dot film 102, and an adhesive layer is not required to be arranged outside the sun to realize adhesion of the lower BEF prism glue layer and the quantum dot film, so that the structure of the enhanced lower BEF assembly can be simplified, the thickness of the enhanced lower BEF assembly can be reduced, and the cost of the enhanced lower BEF assembly can be reduced.

Referring to fig. 1, the lower BEF prism glue layer 103 formed in this example includes an integrally formed lower prism BRF gum base layer 1031 and a lower prism layer 1032, and the lower prism layer 1032 is formed by pressing the lower prism BRF gum base layer 1031 on the lower prism BRF gum base layer 1031 when the lower prism BRF gum base layer 1031 is not cured. The lower prism layer 1032 in this example includes a plurality of prism strips 1033 arranged in parallel, a surface of each prism strip 1033 is a smooth surface, and sizes of the prism strips 1033 are the same, so that the lower prism layer 1032 can improve uniformity of light extraction effect when brightness is improved. As can be seen from fig. 1, the present example realizes the integration of the quantum dot film 102 and the lower BEF prism glue layer 103, which can simplify the structure and the assembly process of the display module, and can reduce the overall thickness compared to the conventional method of separately assembling and disposing the quantum dot film 102 and the lower prism sheet;

referring to fig. 1, the strong type lower BEF assembly in this example further includes a diffusion glue layer 101 disposed on the back surface of the quantum dot film 102, and diffusion particles for diffusing light are mixed in the diffusion glue layer 101, thereby implementing a light diffusion process. It can be seen that the strong lower BEF assembly in this example integrates the lower prism BRF gum base layer 1031, the lower prism layer 1032 and the diffusion gum layer 101 into one film, which can further simplify the structure and assembly process of the display module, reduce the overall thickness of the display module, and reduce the cost thereof.

Referring to fig. 1, a diffusion glue layer 101 in the present example is directly coated on the back surface of a quantum dot film 102, and is cured and molded on the back surface of the quantum dot film 102. That is, the diffusion paste layer 101 is directly formed on the back surface of the quantum dot film 102, the structure of the BEF assembly under enhancement mode can be further simplified and the overall thickness thereof can be reduced.

In other examples of the embodiment, the enhanced lower BEF assembly may further include a BLT (Blue Light Transmitting Mirror Film) Film 100, where the BLT Film 100 only allows Blue Light in the Light source to pass through and reflects the green Light and the red Light back, so as to reduce the loss of the green Light and the red Light and improve the brightness of the Light. For example, an application example is a reinforced lower BEF assembly shown in fig. 2, which includes a quantum dot film 102, a lower BEF prism glue layer 103 and a diffusion glue layer 101 formed directly on the front and back surfaces of the quantum dot film 102, respectively. The diffusion glue layer 101 may be formed by spreading diffusion glue mixed with diffusion particles on the back surface of the quantum dot film 102 and curing the diffusion glue. Referring to fig. 2, in the present example, the reinforced lower BEF includes the BLT film 100 directly bonded to a side of the diffuser paste layer 101 remote from the quantum dot film 102, and the BLT film 100 may be laid on the diffuser paste layer 101 to be bonded thereto while the diffuser paste forming the diffuser paste layer 101 is uncured.

In another example of this embodiment, the reinforced lower BEF assembly may include a BLT film 100 disposed between the diffuser layer 101 and the back of the quantum dot film 102, as shown, for example, in fig. 3: the enhanced lower BEF assembly in this example includes a quantum dot film 102, a lower BEF prism glue layer 103 and an adhesive layer 104 formed directly on the front and back surfaces of the quantum dot film 102, respectively, a blt film 100 adhered to the back surface of the quantum dot film 102 through the adhesive layer 104, and a diffusion glue layer 101 disposed directly on the back surface of the quantum dot film 102.

In the examples shown in fig. 2 and 3, the BLT film 100 is disposed to improve the display brightness of the backlight module; thereby further improving the display effect.

In the LED backlight module, because the whole surface of the lamp panel as the light source emits light and the light intensity of the central point of each LED chip 12 on the lamp panel is the largest, the bright point of the LED is easily seen visually (i.e. there is a halo phenomenon). In order to solve the problem, the current LED backlight module generally uses a plurality of stacked diffusion films to diffuse light for a plurality of times, thereby solving the problem of LED bright spots. However, in this structure, a plurality of diffusion films are required to be disposed, which results in a complicated structure and high cost of the LED backlight module, and increases the thickness of the LED backlight module, which is not favorable for the light and thin of the LED backlight module.

In view of the above problems, referring to fig. 4, in another example of the present embodiment, on the basis of the above examples, for example, on the basis of the example shown in fig. 1, the enhanced lower BEF module in this example further includes a plurality of light blocking units 105 with light transmittance, the plurality of light blocking units 105 are respectively disposed on one surface of the diffusion adhesive layer 101 away from the back surface of the quantum dot film 102, and one light blocking unit 105 corresponds to one LED chip in the LED light source, and each light blocking unit 105 can perform light scattering and light blocking processing on light emitted from the front surface of each LED chip, so that light emitted from the LED backlight module is more uniform, thereby solving a problem that a bright point of the LED chip is visually seen, that is, solving a halo phenomenon visually existing in the existing LED backlight module; and no additional multi-layer diffusion film is needed, so that the structure of the LED backlight module can be simplified, the cost of the LED backlight module can be reduced, the overall thickness of the LED backlight module can be reduced, and the backlight module is more beneficial to thinning. In this embodiment, the light blocking units 105 may be various semi-transparent film layers or adhesive layers, which are not limited herein.

Referring to fig. 4, in the present example, the light blocking units 105 are embedded in the diffusion adhesive layer 101 and are flush with a surface of the diffusion adhesive layer 101 away from the back surface of the quantum dot film 102, so that the structure of the enhanced BEF assembly can be simplified and the integrity thereof can be improved. The light blocking unit 105 can be protected through the diffusion glue layer 101, and the reliability of the BEF assembly under the enhancement mode is improved.

In order to solve the above problems, in this embodiment, on the basis of the foregoing fig. 1-fig. 3, another example is provided, in which a plurality of concave units are further disposed on a surface of the diffusion adhesive layer 101 away from the back surface of the quantum dot film 102, and one concave unit corresponds to an area between adjacent LED chips in the LED light source; therefore, the diffusion glue of the adjacent concave units forms bulges corresponding to the LED chips, and the bulges can weaken the light rays emitted by the LED chips, so that LED bright spots are prevented from being seen visually, and the display effect is further improved. In an application scenario of the present example, referring to fig. 5, at least one of the recessed units may be configured to include a first recess 1011 near the quantum dot film 102, and a second recess 1012 disposed above the first recess 1011 and communicating with the first recess 1011, center points of the first recess 1011 and the second recess 1012 are located on a same center line, and a projected area of the first recess 1011 on the diffusion adhesive layer 101 is smaller than a projected area of the second recess 1012 on the diffusion adhesive layer 101. Therefore, the diffusion adhesive of the adjacent concave units forms a convex structure corresponding to each LED chip, and the convex structure comprises two steps, the projection area of the step close to the LED chip (namely the projection between the adjacent second concave parts 1012) on the diffusion adhesive layer 101 is smaller than the projection area of the step far away from the LED chip (namely the projection between the adjacent first concave parts 1011) on the diffusion adhesive layer 101, and the convex structure of the multi-step can avoid that the miniature LED chip is seen obliquely, and also can further avoid the problem that the LED bright spot is seen obliquely, so that the display effect of the backlight module is further improved, and the satisfaction degree of user experience is improved.

It should be understood that, in the present embodiment, the light blocking units 105 and the protrusion structures of the above examples may be combined, one light blocking unit 105 corresponds to one protrusion, and the light blocking unit 105 is disposed in the protrusion or on the outer surface of the protrusion. And will not be described in detail herein.

This embodiment still provides a LED backlight unit, but its extensive application in but not limited to cell-phone, notebook computer, panel computer, intelligence dress, eyeshield product, vehicle mounted terminal, advertisement display terminal etc. have the display screen on the electronic equipment, it has the light-emitting more even, and the structure is simpler, and the cost is lower, and whole thickness is thinner and the advantage that display effect is good.

Referring to fig. 6, the LED backlight module provided in this embodiment includes a circuit substrate 2, a plurality of micro LED chips 3 disposed on the front surface of the circuit substrate 2, and an enhanced lower BEF assembly disposed above each micro LED chip 3, wherein the diffusion adhesive layer 101 faces each micro LED chip 3. The enhanced lower BEF component adopted by the LED backlight module integrates the lower prism BRF gum base layer 1031, the lower prism layer 1032 and the diffusion glue layer 101 into a film material, so that the structure and the assembly process of the display module can be simplified, the overall thickness of the display module is reduced, and the cost of the display module is reduced. The circuit substrate 2 in this embodiment may be made of a rigid material, for example, but not limited to, a phenolic paper laminated board, an epoxy glass cloth laminated board, a BT resin board, or a glass board; in another example of this embodiment, the substrate may also be made of a flexible material, such as but not limited to a polyester film, a polyimide film, and a fluorinated ethylene propylene film. In some examples, corresponding circuits may be integrally disposed in or on the surface of the substrate according to application requirements, and for example, the circuits may include, but are not limited to, circuits connected to LED chips, driving circuits, and the like. It should be understood that in the present embodiment, the circuit substrate 2 is provided with pads on the front surface thereof, the pads are electrically connected to the electrodes of the LED chip, and the number and arrangement of the pads can be flexibly set according to the application requirement. For example, a plurality of pads are arranged in an array on the substrate, or the pads in adjacent rows are arranged in a staggered manner. In some examples of the present embodiment, the material of the bonding pad may be, but is not limited to, copper, silver, gold, etc. The LED chips in this embodiment may include at least one of Mini LED chips and Micro LED chips in terms of size classification; the LED chip may include at least one of a flip LED chip, a front-mounted LED chip, and a vertical LED chip in terms of the distribution of the LED chip electrodes. The electrodes of the LED chip in this embodiment may be electrically connected to the corresponding pads through, but not limited to, a conductive paste or solder. When a solder is used, the solder may be, but not limited to, a lead-containing solder alloy such as a tin-lead (Sn-Pb) based alloy, a tin-lead-bismuth (Sn-Pb-Bi) based alloy, or a tin-lead-silver (Sn-Pb-Ag) based alloy; lead-free solder alloys, such as tin-silver (Sn-Ag) alloys, tin-bismuth (Sn-Bi) alloys, tin-zinc (Sn-Zn) alloys, tin-antimony (Sn-Sb), tin-silver-copper (Sn-Ag-Cu) alloys, and tin-bismuth-silver (Sn-Bi-Ag) alloys, can also be used.

Referring to fig. 6, in the present embodiment, the LED backlight module further includes an upper BEF prism film 4 disposed on the lower BEF prism glue layer 103, so as to further improve the display brightness of the LED backlight module. It should be understood that, the LED backlight module of the above example may also flexibly change the specific optical film layers included therein and the specific positions of the optical film layers according to specific application requirements, and details are not repeated herein.

It is to be understood that the invention is not limited to the above-described embodiments, and that modifications and variations may be made by those skilled in the art in light of the above teachings, and all such modifications and variations are intended to be included within the scope of the invention as defined in the appended claims.

Claims (10)

1. An enhanced lower BEF component, comprising:

a quantum dot film (102), the quantum dot film (102) having opposing front and back sides, the back side of the quantum dot film (102) facing the LED light source;

the front surface of the quantum dot film (102) is coated with a lower BEF prism glue layer (103) which is formed on the front surface of the quantum dot film (102) in a curing mode, the lower BEF prism glue layer (103) comprises a lower prism BRF glue base layer (1031) and a lower prism layer (1032) which are integrally formed, the lower prism layer (1032) is formed by pressing the lower prism BRF glue base layer (1031) when the lower prism BRF glue base layer (1031) is not cured, the lower prism layer (1032) comprises a plurality of prism strips (1033) which are arranged in parallel, the surface of each prism strip (1033) is a smooth surface, and the sizes of the prism strips (1033) are consistent;

and the diffusion adhesive layer (101) is arranged on the back surface of the quantum dot film (102), and diffusion particles for diffusing light are mixed in the diffusion adhesive layer (101).

2. The reinforced lower BEF assembly of claim 1, wherein the diffusion glue layer (101) is coated directly on the back side of the quantum dot film (102) and cured on the back side of the quantum dot film (102).

3. The reinforced lower BEF assembly according to claim 1, further comprising a BLT film (100) disposed between the diffuser glue layer (101) and the back side of the quantum dot film (102), and an adhesive layer (104) disposed between the back side of the quantum dot film (102) and the BLT film (100), the BLT film (100) being adhered to the back side of the quantum dot film (102) by the adhesive layer (104);

the diffusion glue layer (101) is directly coated on one surface, far away from the back surface of the quantum dot film (102), of the BLT film (100), and is formed by curing on one surface, far away from the back surface of the quantum dot film (102), of the BLT film (100).

4. The reinforced lower BEF assembly according to claim 1 or 2, wherein the diffusion glue layer (101) is directly coated on the back surface of the quantum dot film (102) and cured on the back surface of the quantum dot film (102), and the side of the diffusion glue layer (101) away from the back surface of the quantum dot film (102) is a plane;

the reinforced lower BEF assembly further comprises a BLT film (100) adhered directly to a side of the diffuser paste layer (101) remote from a backside of the quantum dot film (102) when the quantum dot film (102) is uncured.

5. The enhanced lower BEF assembly according to claim 1 or 2, further comprising a plurality of light blocking units (105) having light transmittance, wherein the plurality of light blocking units (105) are respectively disposed on a surface of the diffusion adhesive layer (101) away from the back surface of the quantum dot film (102), and one of the light blocking units (105) corresponds to one of the LED chips in the LED light source.

6. The reinforced lower BEF assembly according to claim 5, wherein the plurality of light blocking units (105) are embedded within the diffuser glue layer (101) flush with a side of the diffuser glue layer (101) away from the back side of the quantum dot film (102).

7. The enhanced lower BEF assembly according to claim 1 or 2, wherein a plurality of recessed units are further disposed on a side of the diffusion adhesive layer (101) away from the back surface of the quantum dot film (102), and one recessed unit corresponds to an area between adjacent LED chips in the LED light source.

8. The enhanced lower BEF assembly according to claim 7, wherein at least one of the plurality of recessed units comprises a first recess (1011) adjacent to the quantum dot film (102), and a second recess (1012) disposed above the first recess (1011) and communicating with the first recess (1011), wherein the center points of the first recess (1011) and the second recess (1012) are located on the same center line, and the projected area of the first recess (1011) on the diffuser layer (101) is smaller than the projected area of the second recess (1012) on the diffuser layer (101).

9. An LED backlight module, characterized in that the LED backlight module comprises a circuit substrate (2), a plurality of micro LED chips (3) disposed on the front surface of the circuit substrate (2), and further comprises the enhanced lower BEF assembly according to any one of claims 1 to 8, the enhanced lower BEF assembly is disposed on each of the micro LED chips (3), and the diffusion adhesive layer (101) faces each of the micro LED chips (3).

10. The LED backlight module according to claim 9, further comprising an upper BEF prism film (4) disposed on the lower BEF prism glue layer (103).

Images