CN214542912U - Small-size semiconductor laser - Google Patents
Small-size semiconductor laser Download PDFInfo
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- CN214542912U CN214542912U CN202120408879.9U CN202120408879U CN214542912U CN 214542912 U CN214542912 U CN 214542912U CN 202120408879 U CN202120408879 U CN 202120408879U CN 214542912 U CN214542912 U CN 214542912U
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Abstract
The utility model provides a small-volume semiconductor laser, which comprises a plurality of light-emitting units, a focusing lens and an output optical fiber, wherein each light-emitting unit comprises a laser chip, a fast axis collimating mirror, a first reflecting end surface, a second reflecting end surface, a slow axis collimating mirror and a first reflecting mirror, the first reflecting end surface and the second reflecting end surface are arranged between the fast axis collimating mirror and the slow axis collimating mirror in parallel, after laser with preset wavelength is collimated by the fast axis collimating mirror, the laser is reflected by the first reflecting end face and the second reflecting end face in sequence to turn back the laser, the turned-back laser is emitted to the slow axis collimating mirror, an included angle between a light path of the laser incident to the first reflecting end face and a light path of the laser emitted from the first reflecting end face is smaller than or equal to 120 degrees, the laser emitted from the slow axis collimating mirror reaches the first reflecting mirror, is reflected by the first reflecting mirror, is focused by the focusing lens and then is coupled to the output optical fiber. The utility model provides a laser instrument overall dimension is little.
Description
Technical Field
The utility model relates to a laser instrument technical field especially relates to a little volume semiconductor laser.
Background
In the existing semiconductor laser, laser emitted by a laser chip directly enters a slow axis collimating mirror after passing through a fast axis collimating mirror, the laser chip, the fast axis collimating mirror and the slow axis collimating mirror are generally arranged on a straight line light path, the light emitting of the laser chip is wide, for a laser, the diameter of a fiber core of an output optical fiber is D, the strip width of the laser chip is X, and the standard amplification rate Ms of the laser is D/X and is a fixed value; if the focal length of the adopted slow-axis collimating mirror is Fs and the focal length of the focusing assembly is Fl, the actual amplification factor Mo of the laser is Fl/Fs; to ensure that the light spot collimated and focused by the slow axis collimating lens and the focusing assembly is smaller than the diameter of the fiber core of the output optical fiber, Mo is required to be less than Ms, i.e. Fl/Fs is less than Ms, and under the condition that the focal length Fl of the focusing assembly is fixed, the focal length Fs of the slow axis collimating lens needs to be increased, so that the slow axis collimating lens needs to use a long focal lens.
The focus of telephoto lens is longer, so need set up slow axis collimating mirror in the position apart from fast axis collimating mirror certain distance to satisfy the focus requirement of slow axis collimating mirror, can lead to arranging fast axis collimating mirror and slow axis collimating mirror required linear distance great like this, and then lead to the size of the laser instrument that final design came out too big, be unfavorable for using under the environment of some narrow and small or space restrictions.
SUMMERY OF THE UTILITY MODEL
In view of this, the utility model provides a little volume semiconductor laser, this laser is through set up the prism in order to increase the optical path between fast axle collimating mirror and slow axle collimating mirror to shorten the distance between slow axle collimating mirror and the fast axle collimating mirror, thereby reduce the whole size of laser.
The utility model provides a small-size semiconductor laser, including a plurality of luminescence units, focusing lens and output optical fiber, each luminescence unit all includes laser chip, fast axle collimating mirror, first reflection terminal surface, second reflection terminal surface, slow axle collimating mirror and first speculum, set up a prism between fast axle collimating mirror and the slow axle collimating mirror, first reflection terminal surface sets up the upper end at the prism, the second reflection terminal surface sets up the lower extreme at the prism, first reflection terminal surface and second reflection terminal surface parallel arrangement are between fast axle collimating mirror and slow axle collimating mirror, and after the laser of predetermineeing the wavelength was through the collimation of fast axle collimating mirror, in proper order by first reflection terminal surface and the reflection of second reflection terminal surface and go back to laser, by the laser outgoing of turning back to slow axle collimating mirror, the laser that jets out from slow axle collimating mirror reachs first speculum, after the reflection of first speculum, after being focused by the focusing lens, the optical fiber is coupled into the output optical fiber.
Further, an included angle between the optical path of the laser light incident on the first reflection end face and the optical path of the laser light emitted from the first reflection end face is less than or equal to 120 degrees.
Furthermore, the first reflection end face is located in the light emitting direction of the fast axis collimating mirror, the second reflection end face is located in the light emitting direction of the first reflection end face, and the slow axis collimating mirror is located in the light emitting direction of the second reflection end face.
Furthermore, the upper end of the prism is also provided with a first horizontal end face parallel to the light outgoing direction of the fast axis collimating mirror, and the lower end of the prism is also provided with a second horizontal end face parallel to the light incoming direction of the slow axis collimating mirror.
Further, the front end of prism sets up the incident terminal surface, the rear end of prism sets up the emergent terminal surface, incident terminal surface and the relative parallel arrangement of emergent terminal surface, the incident terminal surface is located the light-emitting direction of fast axle collimating mirror, first reflection terminal surface is located the light-emitting direction of incident terminal surface, second reflection terminal surface is located the light-emitting direction of first reflection terminal surface, the emergent terminal surface is located the light-emitting direction of second reflection terminal surface, slow axle collimating mirror is located the light-emitting direction of emergent terminal surface.
Further, a vertical distance between a center of the first reflecting end face and a center of the second reflecting end face satisfies: l > (n-1) d; wherein L is the vertical distance between the center of the first reflective end face and the center of the second reflective end face, n is the refractive index of the prism, and d is the thickness of the prism.
Furthermore, the surfaces of the first reflecting end surface and the second reflecting end surface are plated with reflecting films.
Further, the semiconductor laser device further comprises a filter, and the filter only allows laser light with preset wavelength to pass through.
Furthermore, the focusing lens comprises a fast axis focusing lens and a slow axis focusing lens, and the filter is located in the light emitting direction of the first reflector, or in the light emitting direction of the fast axis focusing lens, or in the light emitting direction of the slow axis collimating lens.
The utility model provides a beneficial effect that technical scheme brought is: the utility model provides a semiconductor laser sets up first reflection terminal surface and second reflection terminal surface between fast axle collimating mirror and slow axle collimating mirror, and laser is turned back after first reflection terminal surface and second reflection terminal surface reflection in proper order, has effectively increased the optical path of laser between fast axle collimating mirror and slow axle collimating mirror to the distance between slow axle collimating mirror and the fast axle collimating mirror has been shortened, thereby reduces the overall dimension of laser instrument.
Drawings
Fig. 1 is a schematic structural diagram of a small-sized semiconductor laser according to embodiment 1 of the present invention.
Fig. 2 is a side view of a small-sized semiconductor laser according to embodiment 1 of the present invention.
Fig. 3 is a top view of a small-sized semiconductor laser according to embodiment 1 of the present invention.
Fig. 4 is a schematic structural diagram of a prism of a small-sized semiconductor laser according to embodiment 1 of the present invention.
Fig. 5 is a schematic optical path diagram of a prism of a small-sized semiconductor laser according to embodiment 1 of the present invention.
Fig. 6 is a schematic structural diagram of a prism of a small-sized semiconductor laser according to embodiment 2 of the present invention.
Fig. 7 is a schematic structural diagram of a second mirror and a third mirror of a small-sized semiconductor laser according to embodiment 3 of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, embodiments of the present invention will be further described below with reference to the accompanying drawings.
Example 1:
referring to fig. 1, 2 and 3, embodiment 1 of the present invention provides a small-sized semiconductor laser, which includes a plurality of light emitting units 1 arranged in a ladder shape, a filter 2, a fast-axis focusing lens 3, a slow-axis focusing lens 4, an output optical fiber 5 and a housing 6, wherein the light emitting units 1, the filter 2, the fast-axis focusing lens 3, the slow-axis focusing lens 4 and the output optical fiber 5 are all packaged in the housing 6.
The light-emitting units 1 are arranged in a left-right mode in sequence, each light-emitting unit 1 comprises a laser chip 11, a fast-axis collimating mirror 12, a prism 13, a slow-axis collimating mirror 14 and a first reflecting mirror 15, the laser chip 11 emits laser with preset wavelength, the fast-axis collimating mirror 12 is attached to a light outlet of the laser chip 11, the laser emitted by the laser chip 11 is collimated by the fast-axis collimating mirror 12 in the fast-axis direction and then enters the prism 13, and the laser emitted from the prism 13 is collimated by the slow-axis collimating mirror 14 in the slow-axis direction and then enters the first reflecting mirror 15.
Referring to fig. 4 and 5, the prism 13 is vertically disposed between the fast axis collimator 12 and the slow axis collimator 14, the prism 13 is provided with an incident end face 131, an emergent end face 132, a first reflecting end face 133 and a second reflecting end face 134, the incident end face 131 is located at the front end of the prism 13, the emergent end face 132 is located at the rear end of the prism 13, the first reflecting end face 133 is located at the upper end of the prism 13, the second reflecting end face 134 is located at the lower end of the prism 13, the incident end face 131 and the emergent end face 132 are relatively parallel to each other, the incident end face 131 is located in the light-emitting direction of the fast axis collimator 12, the incident end face 131 and the first reflecting end face 133 are disposed at an included angle and adjacent to each other, the first reflecting end face 133 is located in the light-emitting direction of the incident end face 131, the second reflecting end face 134 and the first reflecting end face 133 are relatively parallel to each other, the second reflecting end face 134 is located in the light-emitting direction of the first reflecting end face 133, the emergent end face 132 is located in the light-emitting direction of the second reflecting end face 134, the slow axis collimating mirror 14 is located in the light outgoing direction of the exit end face 132, the incident end face 131 is perpendicular to the light outgoing direction of the laser chip 11, and the exit end face 132 is parallel to the laser incident direction of the slow axis collimating mirror 14; in this embodiment, the surfaces of the first reflective end surface 133 and the second reflective end surface 134 are plated with reflective films.
Suppose the distance between the fast axis 12 and the slow axis 14 is S0Then the optical path length S between the fast axis 12 and slow axis 14 after the prism 13 is set1＝S0(L + d) · (n-1)/n, where L is the vertical distance between the center of the first reflective end surface 133 and the center of the second reflective end surface 134, n is the refractive index of the prism 13, and d is the thickness of the prism 13, after the prism 13 is disposed, the transverse length S of the optical path between the fast axis collimator 12 and the slow axis collimator 142＝S1-L＝S0+ d- (L + d)/n, the reduced lateral distance Δ between the non-set prism 13 and the set prism 131＝S0-S2＝-d+(L+d)/n，Δ1If it is required to satisfy a condition of greater than 0, (L + d)/n>d, i.e. L>(n-1) d, and thus the prism 13 is selected according to this condition, it is necessary to select a prism having a higher height and a smaller thickness as the distance to be shortened is larger.
In this embodiment, the filter 2 is located in the light-emitting direction of the first reflector 15, that is, the filter 2 is disposed at the right of the fast axis focusing lens 3, the filter 2 transmits laser with a preset wavelength and reflects laser except for the preset wavelength, the fast axis focusing lens 3 is located in the light-emitting direction of the filter 2, and the slow axis focusing lens 4 is located in the light-emitting direction of the fast axis focusing lens 3; the upper edge of the filter 2 is higher than the light-emitting height of the laser chip 11 of the light-emitting unit 1 corresponding to the highest step; the filter 2 can also be positioned in the light-emitting direction of the fast axis focusing lens 3, that is, the filter 2 is arranged between the fast axis focusing lens 3 and the slow axis focusing lens 4; or the filter 2 is positioned in the light-emitting direction of the slow-axis focusing lens 4, that is, the filter 2 is arranged at the left of the slow-axis focusing lens 4; or the filter 2 is located in the light exit direction of the slow axis collimator 14, i.e. the filter 2 is arranged between the slow axis collimator 14 and the first reflector 15.
In this embodiment, a stepped heat sink 7 is disposed inside the housing 6, the stepped heat sink 7 includes at least one step surface 71, each step surface 71 is used for placing a laser chip 11, a fast axis collimating mirror 12, a prism 13, a slow axis collimating mirror 14 and a first reflecting mirror 15 of a light emitting unit 1, and the step surfaces 71 of the stepped heat sink 7 are sequentially arranged in an arithmetic progression, and the step surfaces 71 of the light emitting units 1 that are closer to the incident end surface of the output optical fiber 5 are lower in height, and the step surfaces 71 of the light emitting units 1 that are farther from the incident end surface of the output optical fiber 5 are higher in height, so that light spots output by the optical path of each light emitting unit 1 are not overlapped with each other and can be input to the fast axis focusing lens 3.
In this embodiment 1, the fast axis focusing lens 3 is a spherical cylindrical lens, or an aspheric cylindrical lens; the slow axis focusing lens 4 is a spherical cylindrical lens or an aspheric cylindrical lens, and the fast axis focusing lens 3 is a single cylindrical lens or a composite cylindrical lens; the slow-axis focusing lens 4 is a single cylindrical lens or a composite cylindrical lens, and the fast-axis focusing lens 3 and the slow-axis focusing lens 4 are arranged perpendicular to a plane.
When the laser chip 11 works, the laser chip 11 emits laser with a preset wavelength (more than 900 nanometers), the laser with the preset wavelength is collimated in the fast axis direction by the fast axis collimating mirror 12, the collimated laser beam reaches the first reflecting end surface 133 through the incident end surface 131, the laser beam is reflected on the first reflecting end surface 133, the laser beam reflected from the first reflecting end surface 133 reaches the second reflecting end surface 134, the laser beam is reflected on the second reflecting end surface 134, an included angle between a light path of the laser incident on the first reflecting end surface 133 and a light path of the laser emitted from the first reflecting end surface 133 is less than or equal to 120 degrees, the laser beam emitted from the second reflecting end surface 134 is emitted to the slow axis collimating mirror 14 through the emergent end surface 132, the laser beam is collimated in the slow axis direction by the slow axis collimating mirror 14 and reaches the first reflecting mirror 15, the laser beam is reflected by the first reflecting mirror 15, the laser beam reflected from the first reflecting mirror 15 penetrates through the filter 2, the light beam is focused by a fast-axis focusing lens 3 and a slow-axis focusing lens 4 in sequence, then is coupled into an output optical fiber 5 and is irradiated to the surface of an object.
Some laser irradiated to the surface of the object is reflected to the output optical fiber 5, after the part of laser reaches the filter 2, because the filter 2 only allows the laser with the preset wavelength emitted by the laser chip 11 to pass through, the laser except the preset wavelength cannot return to the laser chip 11 through the filter 2, so that the energy and the intensity of the laser reflected to the laser chip 11 are weakened, the damage to the laser chip 11 is reduced, and the service life of the laser is prolonged.
Example 2:
referring to fig. 6, embodiment 2 provides a small-volume semiconductor laser device differing from embodiment 1 only in that: the upper end of the prism 13 'is provided with a first horizontal end face 135' parallel to the light-emitting direction of the fast axis collimator 12, the lower end of the prism 13 'is provided with a second horizontal end face 136' parallel to the light-emitting direction of the slow axis collimator 14, the first horizontal end face 135 'and the second horizontal end face 136' are arranged to facilitate the installation of the prism 13 ', the upper end of the prism 13' is provided with a first reflecting end face 133 ', the first reflecting end face 133' is adjacent to the first horizontal end face 135 'and forms a certain included angle, the lower end of the prism 13' is provided with a second reflecting end face 134 ', the second reflecting end face 134' is adjacent to the second horizontal end face 136 'and forms a certain included angle, the first reflecting end face 133' is positioned in the light-emitting direction of the fast axis collimator 12, the slow axis collimator 14 is positioned in the light-emitting direction of the second reflecting end face 134 ', the laser emitted from the fast axis collimator 12 is directly emitted to the first reflecting end face 133', the laser light emitted from the second reflecting end face 134' is directly emitted to the slow axis collimating mirror 14; the rest of the structure is basically the same as that of embodiment 1.
When the small-sized semiconductor laser provided in embodiment 2 operates, a laser beam emitted from the fast axis collimator lens 12 reaches the first reflecting end surface 133 ', is reflected at the first reflecting end surface 133', and a laser beam reflected from the first reflecting end surface 133 'reaches the second reflecting end surface 134', and is reflected at the second reflecting end surface 134 ', and a laser beam reflected from the second reflecting end surface 134' exits to the slow axis collimator lens 14, and is collimated by the slow axis collimator lens 14 in the slow axis direction, and then reaches the first reflecting mirror 15, and is reflected by the first reflecting mirror 15, and after passing through the filter 2, a laser beam reflected from the first reflecting mirror 15 is focused by the fast axis focusing lens 3 and the slow axis focusing lens 4 in sequence, and then is coupled into the output optical fiber 5, and is irradiated onto the object surface.
Example 3:
referring to fig. 7, embodiment 3 provides a small-volume semiconductor laser device differing from embodiment 1 only in that: the prism 13 is replaced by a second reflector 16 and a third reflector 17, the second reflector 16 is positioned above the third reflector 17, the second reflector 16 and the third reflector 17 are fixedly connected through a support 8, the second reflector 16 and the third reflector 17 are oppositely arranged between the fast-axis collimating mirror 12 and the slow-axis collimating mirror 14 in parallel, the second reflector 16 is provided with a first reflecting end surface 133-a, the third reflector 17 is provided with a second reflecting end surface 134-a, the first reflecting end surface 133-a of the second reflector 16 is positioned in the light-emitting direction of the fast-axis collimating mirror 12, the second reflecting end surface 134-a of the third reflector 17 is positioned in the light-emitting direction of the first reflecting end surface 133-a, and the slow-axis collimating mirror 14 is positioned in the light-emitting direction of the second reflecting end surface 134-a; the rest of the structure is basically the same as that of embodiment 1.
When the small-sized semiconductor laser provided in embodiment 3 operates, a laser beam emitted from the fast axis collimator 12 reaches the second reflecting mirror 16 and is reflected by the first reflecting end surface 133-a, a laser beam reflected from the first reflecting end surface 133-a reaches the third reflecting mirror 17 and is reflected by the second reflecting end surface 134-a, a laser beam reflected from the second reflecting end surface 134-a is emitted to the slow axis collimator 14, is collimated by the slow axis collimator 14 in the slow axis direction and reaches the first reflecting mirror 15, and is reflected by the first reflecting mirror 15, and a laser beam reflected from the first reflecting mirror 15 passes through the filter 2, is focused by the fast axis focusing lens 3 and the slow axis focusing lens 4 in sequence, and is coupled into the output optical fiber 5, and is irradiated onto the surface of an object.
In this document, the terms front, back, upper and lower are used to define the components in the drawings and the positions of the components relative to each other, and are used for clarity and convenience of the technical solution. It is to be understood that the use of the directional terms should not be taken to limit the scope of the claims.
The features of the embodiments and embodiments described herein above may be combined with each other without conflict.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the present invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included within the protection scope of the present invention.
Claims (9)
1. A small-size semiconductor laser is characterized by comprising a plurality of light emitting units, a focusing lens and an output optical fiber, wherein each light emitting unit comprises a laser chip, a fast axis collimating mirror, a first reflecting end surface, a second reflecting end surface, a slow axis collimating mirror and a first reflecting mirror, a prism is arranged between the fast axis collimating mirror and the slow axis collimating mirror, the first reflecting end surface is arranged at the upper end of the prism, the second reflecting end surface is arranged at the lower end of the prism, the first reflecting end surface and the second reflecting end surface are arranged between the fast axis collimating mirror and the slow axis collimating mirror in parallel, laser with preset wavelength is reflected by the first reflecting end surface and the second reflecting end surface in sequence after being collimated by the fast axis collimating mirror to turn back the laser, the turned-back laser is emitted to the slow axis collimating mirror, the laser emitted from the slow axis collimating mirror reaches the first reflecting mirror and is reflected by the first reflecting mirror, after being focused by the focusing lens, the optical fiber is coupled into the output optical fiber.
2. A small-volume semiconductor laser as claimed in claim 1 wherein the angle between the optical path of the laser light incident on the first reflective facet and the optical path of the laser light exiting the first reflective facet is less than or equal to 120 degrees.
3. A small volume semiconductor laser as claimed in claim 1 wherein the first reflective end facet is located in the light exit direction of the fast axis collimating mirror, the second reflective end facet is located in the light exit direction of the first reflective end facet, and the slow axis collimating mirror is located in the light exit direction of the second reflective end facet.
4. A small volume semiconductor laser as claimed in claim 1 wherein the upper end of the prism is further provided with a first horizontal end surface parallel to the light exit direction of the fast axis collimator, and the lower end of the prism is further provided with a second horizontal end surface parallel to the light entrance direction of the slow axis collimator.
5. A small-sized semiconductor laser as claimed in claim 1, wherein the front end of the prism is provided with an incident end face, the rear end of the prism is provided with an emergent end face, the incident end face and the emergent end face are arranged in parallel, the incident end face is located in the light emergent direction of the fast axis collimating mirror, the first reflecting end face is located in the light emergent direction of the incident end face, the second reflecting end face is located in the light emergent direction of the first reflecting end face, the emergent end face is located in the light emergent direction of the second reflecting end face, and the slow axis collimating mirror is located in the light emergent direction of the emergent end face.
6. A small-volume semiconductor laser as claimed in claim 1 or 5 wherein the vertical distance between the center of the first reflective end facet and the center of the second reflective end facet satisfies: l > (n-1) d; wherein L is the vertical distance between the center of the first reflective end face and the center of the second reflective end face, n is the refractive index of the prism, and d is the thickness of the prism.
7. A small volume semiconductor laser as claimed in claim 1 wherein the surfaces of the first and second reflective facets are each coated with a reflective film.
8. A small volume semiconductor laser as claimed in claim 1 further comprising a filter that allows only laser light of a preset wavelength to pass through.
9. A small-sized semiconductor laser as claimed in claim 8 wherein the focusing lens comprises a fast axis focusing lens and a slow axis focusing lens, and the filter is located in the light-emitting direction of the first reflector, or in the light-emitting direction of the fast axis focusing lens, or in the light-emitting direction of the slow axis collimating lens.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120408879.9U CN214542912U (en) | 2021-02-24 | 2021-02-24 | Small-size semiconductor laser |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202120408879.9U CN214542912U (en) | 2021-02-24 | 2021-02-24 | Small-size semiconductor laser |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114296089A (en) * | 2022-03-03 | 2022-04-08 | 深圳市海创光学有限公司 | Optical system and laser radar |
| CN116047471A (en) * | 2023-03-28 | 2023-05-02 | 北醒（北京）光子科技有限公司 | Radar transmitting system |
-
2021
- 2021-02-24 CN CN202120408879.9U patent/CN214542912U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114296089A (en) * | 2022-03-03 | 2022-04-08 | 深圳市海创光学有限公司 | Optical system and laser radar |
| CN116047471A (en) * | 2023-03-28 | 2023-05-02 | 北醒（北京）光子科技有限公司 | Radar transmitting system |
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