CN203774352U - Back-incident immersed type thermosensitive film infrared detector - Google Patents
Back-incident immersed type thermosensitive film infrared detector Download PDFInfo
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- CN203774352U CN203774352U CN201420028345.3U CN201420028345U CN203774352U CN 203774352 U CN203774352 U CN 203774352U CN 201420028345 U CN201420028345 U CN 201420028345U CN 203774352 U CN203774352 U CN 203774352U
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- immersed type
- incident
- infrared detector
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Abstract
The utility model discloses a back-incident immersed type thermosensitive film infrared detector. The back surface of a substrate of the infrared detector is integrated with a germanium monocrystal hemispherical lens which can converge infrared signals, a sensing element and a compensation element for compensation of the detector are respectively arranged at a focal position and a marginal area of a light condensing center of the germanium lens. The back-incident immersed type thermosensitive film infrared detector has the advantages of being capable of effectively eliminating the influences such as equivalent heat capacity and signal crosstalk on device responsivity due to the substrate effect in thermosensitive devices, realizing the immersed type detection by utilizing the light condensing function of the germanium lens and adopting a method of incidence from the back surface of the film substrate to the sensing element, and greatly increasing the responsivity and detectivity of the thermosensitive film infrared detector. The disclosed back-incident immersed type thermosensitive film infrared detector has a certain guiding function for developing high-performance and non-refrigerating thermosensitive film infrared detection devices, and can be applied to batch production of unit immersed type infrared detection devices.
Description
Technical field
This patent relates to Infrared Detectors, is specifically related to a kind of back of the body incident immersion thermosensitive film type Infrared Detectors.
Background technology
Non-refrigeration thermosensitive type Infrared Detectors is a kind of important Infrared Detectors, compare photon type Infrared Detectors have preparation cost cheap, without the advantage such as low-temperature cooling system, wide-band response, broad application temperature range, device package be simple, in the field such as military, civilian and industrial, have a wide range of applications, such as can be used for temperature sensor, infrared thermal imaging, fireproof alarming, non-contact temperature measuring, night vision detection, security protection detection, environmental monitoring, guided missile tracking and all many-sides such as interception, medical diagnosis.Thermosensitive type Infrared Detectors is the thermal effect of utilizing infrared radiation, by heat and the conversion of other physical quantitys, surveys infrared radiation.The feature of thermal sensitive effect is that the lattice of incident light and material interacts, and makes material temperature increase, thereby causes the physics relevant with temperature, and chemistry or electricity parameter change, such as resistance value, spontaneous polarization strength, thermoelectromotive force etc.Wherein, with thermosensitive resistance type Infrared Detectors, be most widely used, it compares pyroelectricity and two kinds of temperature-sensitive Infrared Detectorss of thermocouple are more easily prepared, and with low cost, and performance is also more stable.
In the past, people mainly concentrate on body material the research of temperature-sensitive Infrared Detectors.Body material, because of the impact of the defects such as intercrystalline incomplete contact and cavity, cause repeatability, the less stable of device, and there is the unfavorable factors such as thermal capacitance is large, response speed is slow in device.In recent years, along with developing rapidly of thin film technique and microelectronic processing technology, the research of device was transferred on film-type material gradually.Thin-film material is even because of it, densification, and prepared response device speed is fast, reliability and stability are high, reproducible.Under the demand of current electronic equipment lightweight, slimming, miniaturization, the temperature-sensitive Infrared Detectors of high-performance, high stable more and more comes into one's own.
But general thermosensitive film type Infrared Detectors ubiquity sensitivity is low, time constant is large, have the problems such as certain signal cross-talk, response device rate and detectivity are not high between responsive unit and compensation.This patent is by the position of the responsive unit of appropriate design device, make to be deposited on sensitivity unit's film and first two corner positions that are distributed in substrate of compensation on substrate, reduced the equivalent thermal capacitance of conducting heat and causing by substrate, eliminated the impact of signal cross-talk between responsive unit and compensation unit, the response time of having reduced device; Simultaneously, adopted the germanium single crystal packaged lens that can assemble infrared signal, by being bonded in the optically focused center of germainium lens based on chemical solution method [see Chinese invention patent: 200610030144.7] the thermo-responsive film of manganese cobalt nickel oxygen of preparing, made higher responsiveness and (be greater than 10
3v/W), detectivity is (higher than 5 * 10
8cmHz
0.5/ W) and the unit of less time constant (being less than 10 milliseconds) back of the body incident immersion thermosensitive film type Infrared Detectors.
Summary of the invention
The object of this patent is to propose a kind of back of the body incident immersion thermosensitive film type Infrared Detectors.The design of this patent has broken through the responsiveness of conventional thin membranous type device and the limit of detectivity, efficiently solves in film-type device that thermal capacitance is large, time constant is large, responsiveness and the problem such as detectivity is not high.
A kind of side view of carrying on the back incident immersion thermosensitive film type Infrared Detectors and vertical view as illustrated in fig. 1 and 2, is characterized in that on the described thermo-responsive film-substrate back side integrated one can assemble the germanium single crystal packaged lens 4 of infrared signal.
Described germanium single crystal packaged lens 4, for refractive index n=4, resistivity are greater than the germanium hemisphere crystal that 30 Ω cm, plated surface are shaped with anti-reflecting layer, is coated with in its bottom surface as dielectric layer and Infrared Detectors and carries out bonding selenium arsenic compound film.
The designed panel detector structure of this patent is realized by following concrete processing step:
1) prepare thermosensitive film.Adopting chemical solution method on amorphous nickel/phosphorus/aluminium oxide substrate, to prepare thickness is 6-8 micron manganese cobalt nickel oxygen film.
2) etch mask.At manganese cobalt nickel oxygen film surface photolithography patterning, rear employing argon ion/HBr wet-etching technology is produced on by the sensitivity unit of device and compensation unit two corner positions that the length of side is the rectangular substrate of 5 millimeters, and area is 0.01mm
2-0.25mm
2.Floating glue cleans.
3) be coated with chromium/gold electrode.At manganese cobalt nickel oxygen film surface photolithography patterning, the chromium of rear employing ion beam sputtering process deposit 50 nanometers and the gold of 200 nanometers are as electrode.Floating glue cleans.
4) scribing.Mode by mechanical scribing is cut along responsive unit detector with two sidelines of compensation unit, substrate breadth length ratio is 1:1, and width is 5 millimeters.
5) detector is adhered on immersion lens.Select selenium arsenic compound film (adhesive) as dielectric layer, under 150 degrees Celsius, make selenium arsenic compound film softening, exert pressure the detector back side is adhered in germanium single crystal packaged lens, make sensitivity unit and the compensation unit of detector lay respectively at germainium lens optically focused gonglion position and fringe region, and put into drying box and at room temperature carry out 24 hours solidifying.
6) transition electrode spot welding.Use ultrasonic gold wire bonder (model is HKD-2320TS), utilize 20 microns of spun golds that the electrode of detector is connected with the transition electrode in germanium single crystal packaged lens.
7) wire bonds and device package.The positive and negative offset side that transition electrode is drawn and the contact conductor of signal end are welded to respectively on three pins that base is corresponding, cover metal shell.Back of the body incident immersed detctor texture edge figure and vertical view are respectively as illustrated in fig. 1 and 2.
The advantage of this patent is: this panel detector structure has overcome that the equivalent thermal capacitance that causes because of body effect in thermosensitive film type device is large, the shortcoming of signal cross-talk; Adopt the germanium single crystal packaged lens that can assemble infrared signal simultaneously, less infrared signal has been focused in the sensitivity unit of detector, significantly improved responsiveness and the detectivity of device.Temperature-sensitive device based on this structure fabrication has been broken through the responsiveness of conventional thin membranous type device and the limit of detectivity, has higher responsiveness, detectivity, and less time constant.
Accompanying drawing explanation:
Fig. 1 is back of the body incident immersed detctor side view, in figure: 1, positive bias voltage 2, signal output part 3, negative bias voltage 4, germanium single crystal packaged lens 5, device compensation unit 6, the responsive unit 7 of device, device package 8, selenium arsenic film dielectric layer.
Fig. 2 is back of the body incident immersed detctor vertical view, in figure: 9, device electrode 10, transition electrode.
Fig. 3 is the variation with frequency of the responsiveness of back of the body incident immersed detctor under positive and negative 10V bias voltage and detectivity.
Embodiment:
Below in conjunction with accompanying drawing, by instantiation, this patent is described in further details, but the protection range of this patent is not limited to following instance.
Examples of implementation:
Based on Mn
1.56co
0.96ni
0.48o
4thermosensitive material film, the panel detector structure that development this patent provides.Specifically by following steps, realize.
(1) Mn
1.56co
0.96ni
0.48o
4the preparation of film
1) prepare precursor solution.To target components, be Mn
1.56co
0.96ni
0.48o
4oxide, take respectively four water acetic acid manganese 91.76g, Cobalt diacetate tetrahydrate 57.39g, four water acetic acid nickel 28.66g, according to every 100g acetate, add the ratio of 400ml acetic acid, 100ml water that powder is dissolved, pour in the solution splendid attire ware of negative pressure leaching machine, selecting aperture is the filter membrane of 0.45 μ m, carry out negative pressure leaching, the contamination precipitation in filtering solution, obtains Mn
1.56co
0.96ni
0.48o
4precursor solution, and it is standby to pack solution into liquid storage bottle.
2) prepare Mn
1.56co
0.96ni
0.48o
4sull.Adopting chemical solution method is that 15 millimeters, thickness are to prepare Mn on the amorphous nickel/phosphorus/aluminium oxide substrate of 100 microns in the length of side
1.56co
0.96ni
0.48o
4film, makes the film that thickness is about 6 microns.
(2) Mn
1.56co
0.96ni
0.48o
4the development of back of the body incident immersed detctor
3) etch mask.At Mn
1.56co
0.96ni
0.48o
4film surface photolithography patterning, rear employing argon ion/HBr wet-etching technology is produced on by the sensitivity unit of device and compensation unit two corner positions that the length of side is the rectangular substrate of 5 millimeters, and area is 0.09mm
2.Floating glue cleans.
4) be coated with chromium/gold electrode.At Mn
1.56co
0.96ni
0.48o
4film surface photolithography patterning, the chromium of rear employing ion beam sputtering process deposit 50 nanometers and the gold of 200 nanometers are as electrode.Floating glue cleans.
5) scribing.Mode by mechanical scribing is cut along responsive unit detector with two sidelines of compensation unit, substrate breadth length ratio is 1:1, and width is 5 millimeters.
6) detector is adhered on immersion lens.The germanium single crystal hemisphere of to select diameter be 11 millimeters be coated with selenium arsenic compound film (adhesive) is as collective optics, under 150 degrees Celsius, make selenium arsenic compound film softening, exert pressure the detector back side is adhered in germanium single crystal packaged lens, make sensitivity unit and the compensation unit of detector lay respectively at germainium lens optically focused gonglion position and fringe region, and put into drying box and at room temperature carry out 24 hours solidifying.
7) transition electrode spot welding.Use ultrasonic gold wire bonder (model is HKD-2320TS), utilize 20 microns of spun golds that the electrode of detector is connected with the transition electrode in germanium single crystal packaged lens.
(3) Mn
1.56co
0.96ni
0.48o
4the packaging and testing of detector
8) wire bonds and device package.The positive and negative offset side that transition electrode is drawn and the contact conductor of signal end are welded to respectively on three pins that base is corresponding, cover metal shell.
9) test.Adopt black matrix as the source of infrared radiation, to Mn
1.56co
0.96ni
0.48o
4back of the body incident immersed detctor is tested and is characterized.The device black matrix response that positive negative bias voltage is 10V with frequency change result as shown in Figure 3.After tested, the thermosensitive film type Infrared Detectors based on this patent development has higher responsiveness, detectivity, and less time constant, and the Blackbody response sensitivily under normal temperature is about 2.5 * 10
3v/W30Hz, detectivity is about 7.6 * 10
8cmHz
0.5/ W30Hz, time constant is 7 milliseconds.
Claims (1)
1. a back of the body incident immersion thermosensitive film type Infrared Detectors, is characterized in that: the integrated one germanium single crystal packaged lens (4) that can assemble infrared signal on the substrate back of described thermosensitive film type Infrared Detectors; Described germanium single crystal packaged lens (4) is that refractive index n=4, resistivity are greater than the germanium hemisphere crystal that 30 Ω cm, plated surface are shaped with anti-reflecting layer, is coated with as dielectric layer and Infrared Detectors carries out bonding selenium arsenic compound film in its bottom surface.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420028345.3U CN203774352U (en) | 2014-01-17 | 2014-01-17 | Back-incident immersed type thermosensitive film infrared detector |
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|---|---|---|---|
| CN201420028345.3U CN203774352U (en) | 2014-01-17 | 2014-01-17 | Back-incident immersed type thermosensitive film infrared detector |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103855238A (en) * | 2014-01-17 | 2014-06-11 | 中国科学院上海技术物理研究所 | Back-incidence immersed thermosensitive film type infrared detector |
| CN110160658A (en) * | 2019-05-17 | 2019-08-23 | 中国科学院上海技术物理研究所 | It is a kind of to etch enhanced uncooled ir thin film detector and preparation method |
-
2014
- 2014-01-17 CN CN201420028345.3U patent/CN203774352U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103855238A (en) * | 2014-01-17 | 2014-06-11 | 中国科学院上海技术物理研究所 | Back-incidence immersed thermosensitive film type infrared detector |
| CN103855238B (en) * | 2014-01-17 | 2016-05-18 | 中国科学院上海技术物理研究所 | A kind of back of the body incident immersion thermosensitive film type Infrared Detectors |
| CN110160658A (en) * | 2019-05-17 | 2019-08-23 | 中国科学院上海技术物理研究所 | It is a kind of to etch enhanced uncooled ir thin film detector and preparation method |
| CN110160658B (en) * | 2019-05-17 | 2023-11-07 | 中国科学院上海技术物理研究所 | Etching enhancement type uncooled infrared film detector and preparation method thereof |
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| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140813 Termination date: 20170117 |