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CN203325845U - Tool used for wafer surface flatness measurement - Google Patents

Tool used for wafer surface flatness measurement Download PDF

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Publication number
CN203325845U
CN203325845U CN2013204008145U CN201320400814U CN203325845U CN 203325845 U CN203325845 U CN 203325845U CN 2013204008145 U CN2013204008145 U CN 2013204008145U CN 201320400814 U CN201320400814 U CN 201320400814U CN 203325845 U CN203325845 U CN 203325845U
Authority
CN
China
Prior art keywords
wafer
measurement
wafer surface
axis
slide block
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2013204008145U
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Chinese (zh)
Inventor
沙恩水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TIANJIN HAOYANG HUANYU TECHNOLOGY Co Ltd
Original Assignee
TIANJIN HAOYANG HUANYU TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TIANJIN HAOYANG HUANYU TECHNOLOGY Co Ltd filed Critical TIANJIN HAOYANG HUANYU TECHNOLOGY Co Ltd
Priority to CN2013204008145U priority Critical patent/CN203325845U/en
Application granted granted Critical
Publication of CN203325845U publication Critical patent/CN203325845U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

The utility model discloses a tool used for wafer surface flatness measurement. With the tool used for wafer surface flatness measurement adopted, the surface flatness of a wafer can be measured quickly and accurately, and undesirable phenomena such as scratching, crushing, edge collision and pollution will not occur on the wafer. The tool used for wafer surface flatness measurement comprises a horizontally-arranged base; the base is provided with a wafer placing area; and supports are erected on the base; and the supports are provided with a laser ranging instrument as well as an X-axis translational movement mechanism and a Y-axis translational movement mechanism which are used for driving the laser ranging instrument to move, wherein the laser ranging instrument is vertically arranged. When the tool used for wafer surface flatness measurement is used, a measurement point of the laser ranging instrument moves on the surface of the wafer, such that the distant from the laser ranging instrument to each measurement points on the surface of the wafer can be measured; and through the comparison of measured distance values, whether the surface of the wafer is flat or not can be judged. With the tool of the utility model which is of structural simplicity, defects in the prior art can be effectively avoided, and intactness of the surface of the wafer can be ensured, and at the same time, measurement accuracy is high, and measurement speed is fast.

Description

A kind of frock for the wafer surface roughness measurement
Technical field
The utility model relates to LED wafer production process equipment, particularly relates to a kind of frock for the wafer surface roughness measurement.
Background technology
Sapphire is a kind of alumina single crystal material, has very high hardness, is the backing material generally adopted of current LED industry, and the matrix of growing as the gallium nitride homepitaxy is with light-emitting diodes such as production blue lights.After substrate processing, the measurement of wafer leveling degree is an important step in the LED industrial chain, need to reach very high precision, and the substrate especially for making patterned wafers, require evenness to be less than 5 microns.The roughness measurement technique of existing Sapphire Substrate is generally that moving the pressing of armrest records its surface smoothness.Sapphire wafer thickness after processing need be accurate to micron level, the wafer measurement is to carry out on the marble plane, and conventional wafer roughness measurement technology, because wafer has warpage in various degree, is pressed measurement by staff, can't accurately record its surface smoothness, error range is larger; Press in process greatlyr to wafer harm, easily cause scuffing, crush, knock the bad phenomenon such as limit, pollution; And, because Measuring Time length causes high heterodyne, measure efficiency low.
The utility model content
The technical problems to be solved in the utility model be to provide a kind of can be fast and Measurement accuracy wafer surface evenness, and can not produce the frock for the wafer surface roughness measurement that scratch, crush, knock the bad phenomenon such as limit, pollution to wafer.
For addressing the above problem, frock for the wafer surface roughness measurement of the present utility model, comprise horizontally disposed base, be provided with the wafer rest area on base, support is positioned on base, laser range finder is set on support and for what drive laser range finder motion X-axis parallel moving mechanism and Y-axis parallel moving mechanism is arranged, described laser range finder vertically arranges.
Described X-axis parallel moving mechanism comprises along the X-axis guide rail of X-direction setting and is positioned at the X-axis slide block on the X-axis guide rail, and be fixed with the Y-axis guide rail on this X-axis slide block, this X-axis slide block is connected with spindle motor driving mechanism or motor rack gear simultaneously.
Be provided with the Y-axis slide block on described Y-axis guide rail, described laser range finder is fixed on this Y-axis slide block below; Described Y-axis slide block is connected with spindle motor driving mechanism or motor rack gear simultaneously.
Adopt the frock for the wafer surface roughness measurement of the present utility model, the mode of walking in wafer surface by the measuring point of laser range finder during use, measure the distance of laser range finder to each measuring point of lens surface, from numerical value, just can judge that whether wafer surface is smooth by the comparison range finding.The utility model is simple in structure, can effectively avoid defect of the prior art, guarantees the excellent of wafer surface, and certainty of measurement is high simultaneously, and measuring speed is fast.
The accompanying drawing explanation
The structural representation that Fig. 1 is the frock for the wafer surface roughness measurement of the present utility model;
The measuring principle schematic diagram that Fig. 2 is the frock for the wafer surface roughness measurement of the present utility model.
Embodiment
In order to make those skilled in the art person understand better technical solutions of the utility model, below in conjunction with drawings and embodiments, the utility model is described in further detail.
As shown in Figure 1, 2, the frock for the wafer surface roughness measurement of the present utility model, comprise horizontally disposed base 1, is provided with the wafer rest area on base 1, and wafer 2 is placed in this zone to be checked; Support 3 is positioned on base 1, laser range finder 4 is set on support 3 and for what drive laser range finder motion X-axis parallel moving mechanism and Y-axis parallel moving mechanism is arranged, and described laser range finder 4 vertically arranges.
Described X-axis parallel moving mechanism comprises along the X-axis guide rail 5 of X-direction setting and is positioned at the X-axis slide block 6 on X-axis guide rail 5, and be fixed with Y-axis guide rail 7 on this X-axis slide block 6, this X-axis slide block 6 is connected with the first spindle motor driving mechanism 8 simultaneously.
Be provided with Y-axis slide block 9 on described Y-axis guide rail 7, described laser range finder 4 is fixed on this Y-axis slide block 9 belows; Described Y-axis slide block 9 is connected with the second spindle motor driving mechanism 10 simultaneously.
Certainly described the first spindle motor driving mechanism 8, the second spindle motor driving mechanism 10 also can replace by the motor rack gear.
Adopt the frock for the wafer surface roughness measurement of the present utility model, the mode of walking along " bow " font inflection route 11 in wafer surface by the measuring point of laser range finder during use, measure the distance of laser range finder to each measuring point of lens surface, from numerical value, just can judge that whether wafer surface is smooth by the comparison range finding.The utility model is simple in structure, can effectively avoid defect of the prior art, guarantees the excellent of wafer surface, and certainty of measurement is high simultaneously, and measuring speed is fast.

Claims (3)

1. the frock for the wafer surface roughness measurement, it is characterized in that: comprise horizontally disposed base, be provided with the wafer rest area on base, support is positioned on base, laser range finder is set on support and for what drive laser range finder motion X-axis parallel moving mechanism and Y-axis parallel moving mechanism is arranged, described laser range finder vertically arranges.
2. a kind of frock for the wafer surface roughness measurement as claimed in claim 1, it is characterized in that: described X-axis parallel moving mechanism comprises along the X-axis guide rail of X-direction setting and is positioned at the X-axis slide block on the X-axis guide rail, be fixed with the Y-axis guide rail on this X-axis slide block, this X-axis slide block is connected with spindle motor driving mechanism or motor rack gear simultaneously.
3. a kind of frock for the wafer surface roughness measurement as claimed in claim 2 is characterized in that: be provided with the Y-axis slide block on described Y-axis guide rail, described laser range finder is fixed on this Y-axis slide block below; Described Y-axis slide block is connected with spindle motor driving mechanism or motor rack gear simultaneously.
CN2013204008145U 2013-07-05 2013-07-05 Tool used for wafer surface flatness measurement Expired - Fee Related CN203325845U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2013204008145U CN203325845U (en) 2013-07-05 2013-07-05 Tool used for wafer surface flatness measurement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2013204008145U CN203325845U (en) 2013-07-05 2013-07-05 Tool used for wafer surface flatness measurement

Publications (1)

Publication Number Publication Date
CN203325845U true CN203325845U (en) 2013-12-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN2013204008145U Expired - Fee Related CN203325845U (en) 2013-07-05 2013-07-05 Tool used for wafer surface flatness measurement

Country Status (1)

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CN (1) CN203325845U (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103673915A (en) * 2013-12-20 2014-03-26 苏州精创光学仪器有限公司 Device for quickly measuring warping degree of touch screen protective glass
CN104019746A (en) * 2014-06-20 2014-09-03 中国石油大学(北京) Measurement device and method for fracture shapes after physical model samples are fractured
CN105910530A (en) * 2016-04-26 2016-08-31 中国电子科技集团公司第二十六研究所 Wafer parallelism testing method
CN107860690A (en) * 2017-10-26 2018-03-30 华南农业大学 A kind of device and method for detecting agricultural unmanned plane spraying droplet deposition uniformity

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103673915A (en) * 2013-12-20 2014-03-26 苏州精创光学仪器有限公司 Device for quickly measuring warping degree of touch screen protective glass
CN104019746A (en) * 2014-06-20 2014-09-03 中国石油大学(北京) Measurement device and method for fracture shapes after physical model samples are fractured
CN104019746B (en) * 2014-06-20 2017-01-25 中国石油大学(北京) Measurement device and method for fracture shapes after physical model samples are fractured
CN105910530A (en) * 2016-04-26 2016-08-31 中国电子科技集团公司第二十六研究所 Wafer parallelism testing method
CN107860690A (en) * 2017-10-26 2018-03-30 华南农业大学 A kind of device and method for detecting agricultural unmanned plane spraying droplet deposition uniformity
CN107860690B (en) * 2017-10-26 2020-08-07 华南农业大学 Device and method for detecting deposition uniformity of spray droplets of agricultural unmanned aerial vehicle

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C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20131204

Termination date: 20140705

EXPY Termination of patent right or utility model