CN203261299U - Gain adjusting circuit of radio frequency power amplifier - Google Patents
Gain adjusting circuit of radio frequency power amplifier Download PDFInfo
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- CN203261299U CN203261299U CN 201320284109 CN201320284109U CN203261299U CN 203261299 U CN203261299 U CN 203261299U CN 201320284109 CN201320284109 CN 201320284109 CN 201320284109 U CN201320284109 U CN 201320284109U CN 203261299 U CN203261299 U CN 203261299U
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Abstract
The utility model provides a gain adjusting circuit of a radio frequency power amplifier. The gain adjusting circuit comprises a multistage series radio frequency power amplifier, wherein at least one stage of the radio frequency power amplifier is provided with a feedback path/ground bypass; and the feedback path/ground bypass comprises switching elements for controlling the switching on/off of the feedback path/ground bypass. The gain adjusting circuit provided by the utility model utilizes the switching elements such as a diode and a diode equivalent module which have the switching on/off functions to control the feedback path/ground bypass of the radio frequency power amplifier, so as to realize the gain adjustment of the radio frequency power amplifier, and an independent RF switch technology does not need to be introduced for manufacturing a switch module, thereby greatly improving the integration level of the gain adjusting circuit, and reducing the production cost of the gain adjusting circuit.
Description
Technical field
The utility model relates to communication technical field, relates in particular to a kind of gain adjusting circuit of radio-frequency power amplifier.
Background technology
Along with deep development and the arriving in 4G mobile communication epoch of 3G mobile communication, portable terminal utilizes same power amplifier (PA, Power Amplifier) to realize that multi-mode working has become trend.Wherein, different mode of operations requires power amplifier to have different gains, and therefore, when the mode of operation of portable terminal was switched, the gain that also needs to tackle mutually power amplifier was regulated.
Present power amplifier gain adjusting circuit has been introduced radio-frequency (RF) switch techniques such as nesistor (BiFET), pseudo-crystal type High Electron Mobility Transistor (PHEMT) or silicon-on-insulator (SOI) and has been made switch module, and the characteristic of utilizing this switch module conducting/disconnection selects corresponding gain-adjusted network, thereby realizes the adjusting of power amplifier gain.The advantage of existing this power amplifier gain adjusting circuit is: the switching of power amplifier mode of operation and the adjusting of its gain can independently be carried out, and flexibility ratio is high.But meanwhile, also there is obvious weak point in this power amplifier gain adjusting circuit, that is, need to integrate kinds of processes, thereby has caused integrating lifting, the decline of circuit level and the rising of circuit production cost of complexity.
The utility model content
For realizing that the purpose of this utility model provides a kind of gain adjusting circuit of radio-frequency power amplifier, the gain-adjusted of utilizing switching device that feedback network or the ground connection bypass of radio-frequency power amplifier are controlled to realize radio-frequency power amplifier.
The utility model provides a kind of gain adjusting circuit of radio-frequency power amplifier, and this gain adjusting circuit comprises the plural serial stage radio-frequency power amplifier, and wherein the described radio-frequency power amplifier of one-level has feedback network at least; The switching device that comprises this feedback network conducting of control or disconnection in this feedback network.
The utility model also provides a kind of gain adjusting circuit of radio-frequency power amplifier, and this gain adjusting circuit comprises the plural serial stage radio-frequency power amplifier, and wherein the output of the described radio-frequency power amplifier of one-level is connected with ground by the ground connection bypass at least; The switching device that comprises this ground connection by-path turn-on of control or disconnection in this ground connection bypass.
Compared with prior art, the utlity model has following advantage: utilize such as diode, diode equivalent module etc. to have the gain-adjusted that the switching device of conducting/break function controls to realize radio-frequency power amplifier to feedback network or the ground connection bypass of radio-frequency power amplifier, make switch module and need not to introduce independently radio-frequency (RF) switch technique.That is to say, compare with traditional radio-frequency power amplifier gain adjusting circuit, the least possible semiconductor technology of utilizing the utility model has realized the gain-adjusted of radio-frequency power amplifier, the production cost that has greatly improved the integrated level of circuit and reduced circuit.
Description of drawings
By reading the detailed description that non-limiting example is done of doing with reference to the following drawings, it is more obvious that other features, objects and advantages of the present utility model will become:
Fig. 1 is the gain adjusting circuit structural representation that utilizes the radio-frequency power amplifier unit of switching device control feedback network break-make according to of the present utility model;
Fig. 2 (a) is to control the gain adjusting circuit structural representation of the radio-frequency power amplifier unit of feedback network break-make according to utilize respectively diode, BC junction diode and the BE junction diode of preferred embodiment of the utility model to Fig. 2 (c);
Fig. 3 is the gain adjusting circuit structural representation that utilizes the radio-frequency power amplifier unit of switching device control ground connection bypass break-make according to of the present utility model;
Fig. 4 (a) is to control the gain adjusting circuit structural representation of the radio-frequency power amplifier unit of ground connection bypass break-make according to utilize respectively diode, BC junction diode and the BE junction diode of preferred embodiment of the utility model to Fig. 4 (c); And
Fig. 5 (a) is to control the gain adjusting circuit structural representation of the radio-frequency power amplifier unit of ground connection bypass break-make according to utilize respectively diode, BC junction diode and the BE junction diode of another preferred embodiment of the utility model to Fig. 5 (c).
Embodiment
For making the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with accompanying drawing embodiment of the present utility model is described in detail.
The gain adjusting circuit of radio-frequency power amplifier provided by the utility model mainly is applicable to mobile communication terminal, but is not limited in this, and every electronic equipment with radio communication function all can adopt gain adjusting circuit provided by the utility model.
The utility model provides a kind of gain adjusting circuit of radio-frequency power amplifier, and this gain adjusting circuit comprises the plural serial stage radio-frequency power amplifier, and wherein the described radio-frequency power amplifier of one-level has feedback network at least; The switching device that comprises this feedback network conducting of control or disconnection in this feedback network.For brevity, hereinafter take the one-level radio-frequency power amplifier as elementary cell, the gain circuitry of the radio-frequency power amplifier of switching device control feedback network break-make that utilizes provided by the utility model is described.
Particularly, please refer to Fig. 1, Fig. 1 is the gain adjusting circuit structural representation that utilizes the radio-frequency power amplifier unit of switching device control feedback network break-make according to of the present utility model.As shown in the figure, the end of radio frequency amplifier PA is input RF
IN, the other end is output RF
OUTIn the present embodiment, described radio frequency amplifier PA adopts gallium arsenide hbt having (GaAs HBT) technique.In other embodiments, described radio frequency amplifier PA can also adopt other semiconductor technologies that is fit to, and such as InGaP HBT technique, SiGe technique, SiN technique, SOI technique etc. for brevity, enumerated no longer one by one at this.
Described radio-frequency power amplifier PA has feedback network, an end of this feedback network and the input RF of described radio-frequency power amplifier PA
INConnect the output RF of the other end and described radio-frequency power amplifier PA
OUTConnect.Wherein, described feedback network comprises feedback unit and switching device.Described feedback unit adopts the RC series circuit usually.Described switching device adopts electronic switch usually, and such as diode or diode equivalent module etc. also can be adopted physical switch.The utility model is not done any restriction to the type of switching device, all falls into protection range of the present utility model so long as have the switching device of the function of conducting and disconnection.
When the switching device conducting, the feedback network conducting of radio-frequency power amplifier PA, namely feedback unit is effective, and at this moment, part is from this radio-frequency power amplifier PA output RF
OUTThe signal of output enters in the feedback network, and therefore, this radio-frequency power amplifier PA is in the low gain mode of operation.When switching device disconnected, the feedback network of radio-frequency power amplifier PA disconnected, and namely feedback unit is invalid, at this moment, and from this radio-frequency power amplifier PA input RF
INThe signal that enters all amplifies through radio-frequency power amplifier PA, and therefore, this radio-frequency power amplifier PA is in the high-gain mode of operation.Thus, disconnection or conducting by switching device control feedback network can realize that radio-frequency power amplifier PA switches between high-gain mode of operation and low gain mode of operation.
Need to prove that construction of switch of different nature is applicable to radio-frequency power amplifier not at the same level.For example, if adopt diode or diode equivalent module as switching device, then this switching device mainly is applicable to the Power Processing of prime radio-frequency power amplifier, and be not suitable for powerful eventually level radio-frequency power amplifier, wherein, described eventually level radio-frequency power amplifier refers to the afterbody radio-frequency power amplifier in the described plural serial stage radio frequency amplifier, and described prime radio-frequency power amplifier refers to be positioned at described eventually level radio-frequency power amplifier radio-frequency power amplifier before.Again for example, if adopt physical switch as switching device, then this switching device can be applied to the radio-frequency power amplifier of arbitrary number of level.Therefore, need to select suitable switching device according to the actual design demand.
Below, describe with the structure of a preferred embodiment to the gain adjusting circuit of radio-frequency power amplifier provided by the utility model.
Please refer to Fig. 2 (a), as shown in the figure, the end of radio-frequency power amplifier PA is input RF
IN, the other end is output RF
OUTFor the plural serial stage radio-frequency power amplifier, the radio-frequency power amplifier PA shown in the figure refers to the prime radio-frequency power amplifier and can not be whole level radio-frequency power amplifier.In order to guarantee that radio-frequency power amplifier PA can work, need to exist the voltage source V that operating voltage can be provided for this radio-frequency power amplifier PA
Cc(herein with the first voltage source V
CcExpression).As shown in the figure, this first voltage source V
CcOutput RF by inductance L and radio-frequency power amplifier PA
OUTConnect, the operating voltage of high level is provided for described radio-frequency power amplifier PA.Also there is the biasing interface in described radio-frequency power amplifier PA, in order to receive bias current I
Bias, wherein, this bias current I
BiasUsually by CMOS module (not shown) control or directly provide.
Described radio-frequency power amplifier PA has feedback network.Described feedback network comprises feedback unit and switching device.In the present embodiment, described feedback unit adopts RC series circuit (part that encloses with dotted line among the figure), and described switching device adopts diode D
1Wherein, diode D
1Positive pole and the output RF of described radio-frequency power amplifier PA
OUTConnect diode D
1Negative pole be connected and the input RF of the other end of RC series circuit and described radio-frequency power amplifier PA with an end of RC series circuit
INConnect.That is to say diode D
, 1The described feedback network of the formation of connecting with the RC series circuit.Because the first voltage source V
CcOutput RF by inductance L and radio-frequency power amplifier PA
OUTConnect, therefore, diode D
1Positive pole also with the first voltage source V
CcConnect.
For to diode D
1Conducting/disconnection control, also need diode D
1Control voltage is provided.In the present embodiment, described diode D
1Negative pole with this diode D is provided
1The second voltage source V of control voltage
CtrlConnect, wherein, at described second voltage source V
CtrlWith diode D
1Between also have controlling resistance R
CtrlBy regulating controlling resistance R
CtrlResistance can corresponding adjusting diode D
1Bear the linear work ability of signal power.
Utilize this diode D
1The process that realizes radio-frequency power amplifier PA gain-adjusted is as follows: as second voltage source V
CtrlAccess high level V
HThe time, because the first voltage source V
CcWith second voltage source V
CtrlBe high level, so can't form the poor diode D that makes of forward voltage between its two
1Conducting, at this moment, diode D
1Disconnect, the RC series circuit is invalid, from this radio-frequency power amplifier PA input RF
INThe signal that enters all amplifies through radio-frequency power amplifier PA, and therefore, this radio-frequency power amplifier PA is in the high-gain mode of operation.As second voltage source V
CtrlAccess low level V
LThe time, because the first voltage source V
CcBe high level, so exist between its two and can make diode D
1The forward voltage of conducting is poor, at this moment, and diode D
1Conducting, the RC series circuit is effective, and part is from this radio-frequency power amplifier PA output RF
OUTThe signal of output enters in the feedback network, thereby so that the gain of radio-frequency power amplifier PA reduces, therefore, this radio-frequency power amplifier PA is in the low gain mode of operation.
Except diode D
1Outside, can also adopt the diode equivalent module that has equally conducting/break function to replace diode D
1Break-make to feedback network is controlled, thereby realizes the gain-adjusted of radio-frequency power amplifier PA.
Particularly, please refer to Fig. 2 (b), in a further advantageous embodiment, the base stage of triode is connected with emitter, form equivalent diode D
2(hereinafter with BC junction diode D
2Expression), wherein, the base stage of triode with can be regarded as this BC junction diode D after emitter is connected
2Positive pole (i.e. equivalence anodal), and the collector electrode of triode can be regarded as this BC junction diode D
2Negative pole (being equivalent negative pole).Therefore, with diode D
1Connected mode in gain adjusting circuit is identical, this BC junction diode D
2Anodal the first voltage source V with radio-frequency power amplifier PA operating voltage is provided of equivalence
CcConnect this BC junction diode D
2Equivalent negative pole with this BC junction diode D is provided
2The second voltage source V of control voltage
CtrlConnect.As second voltage source V
CtrlAccess high level V
HThe time, BC junction diode D
2Disconnect, the RC series circuit is invalid, and this radio-frequency power amplifier PA is in the high-gain mode of operation; As second voltage source V
CtrlAccess low level V
LThe time, BC junction diode D
2Conducting, the RC series circuit is effective, and this radio-frequency power amplifier PA is in the low gain mode of operation.
Please refer to Fig. 2 (c), in another preferred embodiment, the base stage of triode is connected with collector electrode, form equivalent diode D
3(hereinafter with BE junction diode D
3Expression), wherein, the base stage of triode with can be regarded as this BE junction diode D after collector electrode is connected
3Positive pole (i.e. equivalence anodal), and the collector electrode of triode can be regarded as this BE junction diode D
3Negative pole (being equivalent negative pole).Therefore, with diode D
1Connected mode in gain adjusting circuit is identical, this BE junction diode D
3Anodal the first voltage source V with radio-frequency power amplifier PA operating voltage is provided of equivalence
CcConnect this BE junction diode D
3Equivalent negative pole with this BC junction diode D is provided
2The second voltage source V of control voltage
CtrlAs second voltage source V
CtrlAccess high level V
HThe time, BE junction diode D
3Disconnect, the RC series circuit is invalid, and this radio-frequency power amplifier PA is in the high-gain mode of operation; As second voltage source V
CtrlAccess low level V
LThe time, BE junction diode D
3Conducting, the RC series circuit is effective, and this radio-frequency power amplifier PA is in the low gain mode of operation.
Need to prove that the diode equivalent module is not limited only to above-mentioned BC junction diode D
2With BE junction diode D
3, every diode equivalent module with conducting/break function all falls into protection range of the present utility model, for brevity, this no longer a pair of other diode equivalent modules enumerate.
In the above-described embodiments, because the biasing interface of radio-frequency power amplifier receives bias current I always
Bias, therefore, radio-frequency power amplifier is always in running order in the process of gain-adjusted.Especially, in another preferred embodiment, utilize the biasing interface that the operating state of radio-frequency power amplifier is controlled, and cooperate the break-make of switching device together radio-frequency power amplifier to be carried out gain-adjusted.With reference to figure 2 (a), still carry out gain-adjusted take the break-make of utilizing diode and describe as example.As shown in the figure, the radio-frequency power amplifier among the figure is the elementary radio-frequency power amplifier in the plural serial stage radio-frequency power amplifier, i.e. first order radio-frequency power amplifier.As second voltage source V
CtrlAccess high level V
HThe time, this moment diode D
1Disconnect, the RC series circuit is invalid, and the biasing interface of elementary radio-frequency power amplifier is in (ON) state of opening of normal bias, this elementary radio-frequency power amplifier PA input RF
INThe signal that enters all amplifies through radio-frequency power amplifier PA, and therefore, this elementary radio-frequency power amplifier PA is in the high-gain mode of operation.As second voltage source V
CtrlAccess low level V
LThe time, this moment diode D
1Conducting, the RC series circuit is effective, and the biasing interface of elementary radio-frequency power amplifier is in disconnection (OFF) state, enters the bias current I of this elementary radio-frequency power amplifier by the biasing interface
BiasBe 0, namely elementary radio-frequency power amplifier is closed and does not work, all radiofrequency signals from the amplifier bypass (because this moment, elementary radio-frequency power amplifier was not in running order, therefore described RC series circuit and diode D
1The circuit that series connection consists of is called as the amplifier bypass) pass through, therefore, this elementary radio-frequency power amplifier PA is in the low gain mode of operation.Certainly, this scheme can adopt the diode equivalent module to replace diode D equally
1Carry out gain-adjusted.But, need to prove, owing to the diode D in the amplifier bypass when the low gain mode of operation
1Bear whole radiofrequency signals, so utilize the biasing interface that the operating state of radio-frequency power amplifier is controlled and the break-make that cooperates diode only is only applicable to elementary radio-frequency power amplifier to the scheme that radio-frequency power amplifier carries out gain-adjusted together.What it will be appreciated by those skilled in the art that is, for other switching devices, can be according to the characteristic of this switching device, and correspondingly use this programme at radio-frequency power amplifier not at the same level.
The utility model also provides a kind of gain adjusting circuit of radio-frequency power amplifier, and this gain adjusting circuit comprises the plural serial stage radio-frequency power amplifier, and wherein the output of the described radio-frequency power amplifier of one-level is connected with ground by the ground connection bypass at least; The switching device that comprises this ground connection by-path turn-on of control or disconnection in this ground connection bypass.For brevity, hereinafter take the one-level radio-frequency power amplifier as elementary cell, the gain circuitry of the radio-frequency power amplifier of switching device control ground connection bypass break-make that utilizes provided by the utility model is described.
Particularly, please refer to Fig. 3, Fig. 3 is the gain adjusting circuit structural representation that utilizes the radio-frequency power amplifier unit of switching device control ground connection bypass break-make according to of the present utility model.As shown in the figure, the end of radio frequency amplifier PA is input RF
IN, the other end is output RF
OUTIn the present embodiment, described radio frequency amplifier PA adopts gallium arsenide hbt having (GaAs HBT) technique.In other embodiments, described radio frequency amplifier PA can also adopt other semiconductor technologies that is fit to, and such as InGaP HBT technique, SiGe technique, SiN technique, SOI technique etc. for brevity, enumerated no longer one by one at this.
Described radio-frequency power amplifier PA has the ground connection bypass, an end of this ground connection bypass and the output RF of described radio-frequency power amplifier PA
OUTConnect, the other end is connected with ground.Wherein, described ground connection bypass comprises ground unit and switching device.As shown in Figure 3, in the present embodiment, an end of switching device and the output RF of radio-frequency power amplifier PA
OUTConnect, the other end of switching device is connected with an end of ground unit, and the other end of ground unit is connected with ground.In other embodiments, can also be an end of ground unit and the output RF of radio-frequency power amplifier PA
OUTConnect, the other end of ground unit is connected with an end of switching device, and the other end of switching device is connected with ground.Described ground unit adopts the RC series circuit usually.Described switching device adopts electronic switch usually, and such as diode or diode equivalent module etc. also can be adopted physical switch.The utility model is not done any restriction to the type of switching device, all falls into protection range of the present utility model so long as have the switching device of the function of conducting and disconnection.
When the switching device conducting, the ground connection by-path turn-on of radio-frequency power amplifier PA, be that ground unit is effective, at this moment, partly be bypassed to ground through this radio-frequency power amplifier PA amplifying signal, thereby cause the gain of radio-frequency power amplifier PA to reduce, therefore, this radio-frequency power amplifier PA is in the low gain mode of operation.When switching device disconnected, the ground connection bypass of radio-frequency power amplifier PA disconnected, and namely ground unit is invalid, at this moment, through this radio-frequency power amplifier PA amplifying signal all from the output RF of this radio-frequency power amplifier PA
OUTOutput, therefore, this radio-frequency power amplifier PA is in the high-gain mode of operation.Thus, disconnection or conducting by the bypass of switching device control ground connection can realize that radio-frequency power amplifier PA switches between high-gain mode of operation and low gain mode of operation.
Need to prove that construction of switch of different nature is applicable to radio-frequency power amplifier not at the same level.For example, if adopt diode or diode equivalent module as switching device, then this switching device mainly is applicable to the Power Processing of prime radio-frequency power amplifier, and be not suitable for powerful eventually level radio-frequency power amplifier, wherein, described eventually level radio-frequency power amplifier refers to the afterbody radio-frequency power amplifier in the described plural serial stage radio frequency amplifier, and described prime radio-frequency power amplifier refers to be positioned at described eventually level radio-frequency power amplifier radio-frequency power amplifier before.
Below, describe with the structure of a preferred embodiment to the gain adjusting circuit of radio-frequency power amplifier provided by the utility model for structure shown in Figure 3.
Please refer to Fig. 4 (a), as shown in the figure, the end of radio-frequency power amplifier PA is input RF
IN, the other end is output RF
OUTWherein, for the plural serial stage radio-frequency power amplifier, the radio-frequency power amplifier PA shown in the figure refers to the prime radio-frequency power amplifier and can not be whole level radio-frequency power amplifier.In order to guarantee that radio-frequency power amplifier PA can work, need to exist the voltage source V that operating voltage can be provided for this radio-frequency power amplifier PA
Cc(herein with the 5th voltage source V
CcExpression).As shown in the figure, the 5th voltage source V
CcOutput RF by inductance L and radio-frequency power amplifier PA
OUTConnect, the operating voltage of high level is provided for described radio-frequency power amplifier PA.Also there is the biasing interface in described radio-frequency power amplifier PA, in order to receive bias current I
Bias, wherein, this bias current I
BiasUsually by CMOS module (not shown) control or directly provide.
Described radio-frequency power amplifier PA has the ground connection bypass.Described ground connection bypass comprises ground unit and switching device.In the present embodiment, described ground unit adopts RC series circuit (part that encloses with dotted line among the figure), and described switching device adopts diode D
4Wherein, diode D
4Positive pole and the output RF of described radio-frequency power amplifier PA
OUTConnect diode D
4Negative pole be connected with an end of RC series circuit, and the other end of RC series circuit is connected with ground.That is to say diode D
4The described ground connection bypass of the formation of connecting with the RC series circuit.
For to diode D
4Conducting/disconnection control, also need diode D
4Control voltage is provided.In the present embodiment, described diode D
4Negative pole with this diode D is provided
4The tertiary voltage source V of control voltage
CtrlConnect, wherein, at described tertiary voltage source V
CtrlWith diode D
4Between also have controlling resistance R
CtrlBy regulating controlling resistance R
CtrlResistance can corresponding adjusting diode D
4Bear the linear work ability of signal power.
Utilize this diode D
4The process that realizes radio-frequency power amplifier PA gain-adjusted is as follows: as tertiary voltage source V
CtrlAccess high level V
HThe time, because the output RF of radio-frequency power amplifier PA
OUTBe high level, therefore, the output RF of radio-frequency power amplifier PA
OUTWith tertiary voltage source V
CtrlBetween can't form the poor diode D that makes of forward voltage
4Conducting, at this moment, diode D
4Disconnect, the RC series circuit is invalid, through this radio-frequency power amplifier PA amplifying signal all from the output RF of this radio-frequency power amplifier PA
OUTOutput, therefore, this radio-frequency power amplifier PA is in the high-gain mode of operation.As tertiary voltage source V
CtrlAccess low level V
LThe time, because the output RF of radio-frequency power amplifier PA
OUTBe high level, therefore, the output RF of radio-frequency power amplifier PA
OUTWith tertiary voltage source V
CtrlBetween exist and can make diode D
4The forward voltage of conducting is poor, at this moment, and diode D
4Conducting, the RC series circuit is effective, partly be bypassed to ground through this radio-frequency power amplifier PA amplifying signal, thereby so that the gain of radio-frequency power amplifier PA reduces, therefore, this radio-frequency power amplifier PA is in the low gain mode of operation.
Except diode D
4Outside, can also adopt the diode equivalent module that has equally conducting/break function to replace diode D
4Break-make to the ground connection bypass is controlled, thereby realizes the gain-adjusted of radio-frequency power amplifier PA.
Particularly, please refer to Fig. 4 (b), in a further advantageous embodiment, the base stage of triode is connected with emitter, form equivalent diode D
5(hereinafter with BC junction diode D
5Expression), wherein, the base stage of triode with can be regarded as this BC junction diode D after emitter is connected
5Positive pole (i.e. equivalence anodal), and the collector electrode of triode can be regarded as this BC junction diode D
5Negative pole (being equivalent negative pole).Therefore, with diode D
4Connected mode in gain adjusting circuit is identical, this BC junction diode D
5The anodal output RF with radio-frequency power amplifier PA of equivalence
OUTConnect this BC junction diode D
5Equivalent negative pole be connected with the RC series circuit.As tertiary voltage source V
CtrlAccess high level V
HThe time, BC junction diode D
5Disconnect, the RC series circuit is invalid, and this radio-frequency power amplifier PA is in the high-gain mode of operation; As tertiary voltage source V
CtrlAccess low level V
LThe time, BC junction diode D
5Conducting, the RC series circuit is effective, and this radio-frequency power amplifier PA is in the low gain mode of operation.
Please refer to Fig. 4 (c), in another preferred embodiment, the base stage of triode is connected with collector electrode, form equivalent diode D
6(hereinafter with BE junction diode D
6Expression), wherein, the base stage of triode with can be regarded as this BE junction diode D after collector electrode is connected
6Positive pole (i.e. equivalence anodal), and the collector electrode of triode can be regarded as this BE junction diode D
6Negative pole (being equivalent negative pole).Therefore, with diode D
4Connected mode in gain adjusting circuit is identical, this BE junction diode D
6The anodal output RF with radio-frequency power amplifier PA of equivalence
OUTConnect this BE junction diode D
6Equivalent negative pole be connected with the RC series circuit.As tertiary voltage source V
CtrlAccess high level V
HThe time, BE junction diode D
6Disconnect, the RC series circuit is invalid, and this radio-frequency power amplifier PA is in the high-gain mode of operation; As tertiary voltage source V
CtrlAccess low level V
LThe time, BE junction diode D
6Conducting, the RC series circuit is effective, and this radio-frequency power amplifier PA is in the low gain mode of operation.
In above preferred embodiment, the structure of ground connection bypass is: an end of switching device and the output RF of radio-frequency power amplifier PA
OUTConnect, the other end of switching device is connected with an end of ground unit, and the other end of ground unit is connected with ground.Below, describe with the another kind of structure of a preferred embodiment to the ground connection bypass, wherein, the another kind of structure of described ground connection bypass is: an end of ground unit and the output RF of radio-frequency power amplifier PA
OUTConnect, the other end of ground unit is connected with an end of switching device, and the other end of switching device is connected with ground.
Please refer to Fig. 5 (a), Fig. 5 (a) is that from the difference of Fig. 4 (a) structure of ground connection bypass is different.Shown in Fig. 5 (a), the ground unit in the ground connection bypass adopts RC series circuit (part that encloses with dotted line among the figure), and switching device adopts diode D
7Wherein, diode D
7Positive pole be connected the output RF of the other end of RC series circuit and radio-frequency power amplifier PA with an end of RC series circuit
OUTConnect diode D
7Negative pole be connected with ground.
For to diode D
7Conducting/disconnection control, also need diode D
7Control voltage is provided.In the present embodiment, described diode D
7Positive pole with this diode D is provided
7The 4th voltage source V of control voltage
CtrlConnect, wherein, in described the 4th voltage source V
CtrlWith diode D
7Between also have controlling resistance R
CtrlBy regulating controlling resistance R
CtrlResistance can corresponding adjusting diode D
7Bear the linear work ability of signal power.
Utilize this diode D
7The process that realizes radio-frequency power amplifier PA gain-adjusted is as follows: when the 4th voltage source V
CtrlAccess high level V
HThe time, because the 4th voltage source V
CtrlAnd exist between the ground and can make diode D
7The forward voltage of conducting is poor, at this moment, and diode D
7Conducting, the RC series circuit is effective, partly be bypassed to ground through this radio-frequency power amplifier PA amplifying signal, thereby so that the gain of radio-frequency power amplifier PA reduces, therefore, this radio-frequency power amplifier PA is in the low gain mode of operation.When the 4th voltage source V
CtrlAccess low level V
LThe time, because the 4th voltage source V
CtrlAnd can't form the poor diode D that makes of forward voltage between the ground
7Conducting, at this moment, diode D
7Disconnect, the RC series circuit is invalid, through this radio-frequency power amplifier PA amplifying signal all from the output RF of this radio-frequency power amplifier PA
OUTOutput, therefore, this radio-frequency power amplifier PA is in the high-gain mode of operation.
Similarly, except diode D
7Outside, can also adopt the diode equivalent module that has equally conducting/break function to replace diode D
7Break-make to the ground connection bypass is controlled, thereby realizes the gain-adjusted of radio-frequency power amplifier PA.For example, shown in Fig. 5 (b), the base stage of triode is connected with emitter, forms BC junction diode D
8To replace diode D
7Again for example, shown in Fig. 5 (c), the base stage of triode is connected with collector electrode, forms BE junction diode D
9To replace diode D
7
Need to prove that the diode equivalent module is not limited only to above-mentioned BC junction diode D
5, D
8With BE junction diode D
6, D
9, every diode equivalent module with conducting/break function all falls into protection range of the present utility model, for brevity, no longer other diode equivalent modules is enumerated one by one at this.
Above-described embodiment is only take the one-level radio-frequency power amplifier as elementary cell, to the gain circuitry of the radio-frequency power amplifier that utilizes switching device control feedback network break-make provided by the utility model and utilize the gain circuitry of the radio-frequency power amplifier of switching device control ground connection bypass break-make to describe.Those skilled in the art it should be understood that, in actual applications, often need the actual design demand according to the radio-frequency power amplifier gain adjusting circuit, determine that the every one-level radio-frequency power amplifier in the plural serial stage radio-frequency power amplifier is to adopt the structure of switching device control feedback network or employing switching device to control the structure of ground connection bypass or even adopt simultaneously above-mentioned two kinds of structures.
Compared with prior art, the utlity model has following advantage: utilize such as diode, diode equivalent module etc. to have the gain-adjusted that the switching device of conducting/break function controls to realize radio-frequency power amplifier to feedback network or the ground connection bypass of radio-frequency power amplifier, make switch module and need not to introduce independently radio-frequency (RF) switch technique.That is to say, compare with traditional radio-frequency power amplifier gain adjusting circuit, the least possible semiconductor technology of utilizing the utility model has realized the gain-adjusted of radio-frequency power amplifier, the production cost that has greatly improved the integrated level of circuit and reduced circuit.
Above disclosed only is several preferred embodiment of the present utility model, certainly can not limit with this interest field of the utility model, and the equivalent variations of therefore doing according to the utility model claim still belongs to the scope that the utility model is contained.
Claims (14)
1. the gain adjusting circuit of a radio-frequency power amplifier is characterized in that:
This gain adjusting circuit comprises the plural serial stage radio-frequency power amplifier, and wherein the described radio-frequency power amplifier of one-level has feedback network at least;
The switching device that comprises this feedback network conducting of control or disconnection in this feedback network.
2. gain adjusting circuit according to claim 1 is characterized in that:
Radio-frequency power amplifier with described feedback network is the prime radio-frequency power amplifier in the described plural serial stage radio-frequency power amplifier.
3. gain adjusting circuit according to claim 1 is characterized in that:
Described switching device and RC series circuit are connected in series and consist of described feedback network.
4. each described gain adjusting circuit in 3 according to claim 1 is characterized in that:
Described switching device is diode or diode equivalent module;
The equivalence of the anodal or described diode equivalent module of described diode is anodal to be connected with the first voltage source that described radio-frequency power amplifier operating voltage is provided;
The equivalent negative pole of the negative pole of described diode or described diode equivalent module is connected with the second voltage source that this diode or this diode equivalent module controls voltage are provided.
5. gain adjusting circuit according to claim 4 is characterized in that:
Described diode equivalent module is formed equivalent diode after the base stage with triode is connected with emitter; Or
Described diode equivalent module is formed equivalent diode after the base stage with triode is connected with collector electrode.
6. each described gain adjusting circuit in 3 according to claim 1 is characterized in that described radio-frequency power amplifier adopts gallium arsenide hbt having technique.
7. the gain adjusting circuit of a radio-frequency power amplifier is characterized in that:
This gain adjusting circuit comprises the plural serial stage radio-frequency power amplifier, and wherein the output of the described radio-frequency power amplifier of one-level is connected with ground by the ground connection bypass at least;
The switching device that comprises this ground connection by-path turn-on of control or disconnection in this ground connection bypass.
8. gain adjusting circuit according to claim 7 is characterized in that:
Radio-frequency power amplifier with described ground connection bypass is the prime radio-frequency power amplifier in the described plural serial stage radio-frequency power amplifier.
9. gain adjusting circuit according to claim 7 is characterized in that:
Described switching device and RC series circuit are connected in series and consist of described ground connection bypass.
10. each described gain adjusting circuit in 9 according to claim 7 is characterized in that:
Described switching device is diode or diode equivalent module.
11. gain adjusting circuit according to claim 10 is characterized in that:
The equivalent positive pole anodal or described diode equivalent module of described diode is connected with the output of described radio-frequency power amplifier;
The negative pole of the negative pole of described diode or described diode equivalent module is connected with the tertiary voltage source that this diode or this diode equivalent module controls voltage are provided.
12. gain adjusting circuit according to claim 10 is characterized in that:
The equivalence of the anodal or described diode equivalent module of described diode is anodal to be connected with the 4th voltage source that this diode or this diode equivalent module controls voltage are provided;
The negative pole of the negative pole of described diode or described diode equivalent module is connected with ground.
13. gain adjusting circuit according to claim 10 is characterized in that:
Described diode equivalent module is formed equivalent diode after the base stage with triode is connected with emitter; Or
Described diode equivalent module is formed equivalent diode after the base stage with triode is connected with collector electrode.
14. each described gain adjusting circuit in 9 is characterized in that according to claim 7, it is gallium arsenide hbt having technique that described radio-frequency power amplifier adopts.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320284109 CN203261299U (en) | 2013-05-22 | 2013-05-22 | Gain adjusting circuit of radio frequency power amplifier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320284109 CN203261299U (en) | 2013-05-22 | 2013-05-22 | Gain adjusting circuit of radio frequency power amplifier |
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| CN203261299U true CN203261299U (en) | 2013-10-30 |
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| CN 201320284109 Expired - Lifetime CN203261299U (en) | 2013-05-22 | 2013-05-22 | Gain adjusting circuit of radio frequency power amplifier |
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| CN104917475A (en) * | 2015-02-15 | 2015-09-16 | 上海唯捷创芯电子技术有限公司 | Adjustable gain power amplifier, gain adjusting method and mobile terminal |
| CN106169915A (en) * | 2016-06-30 | 2016-11-30 | 唯捷创芯(天津)电子技术股份有限公司 | Many gain modes power amplifier, chip and communication terminal |
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| CN108055011A (en) * | 2017-12-12 | 2018-05-18 | 无锡中普微电子有限公司 | Multimode radio-frequency power amplifier |
| WO2018113109A1 (en) * | 2016-12-20 | 2018-06-28 | 深圳市中兴微电子技术有限公司 | Rf power amplifier and gain control circuit thereof |
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| US11323074B2 (en) | 2017-07-05 | 2022-05-03 | Vanchip (Tianjin) Technology Co., Ltd. | Radio frequency power amplifier based on power detection feedback, chip and communication terminal |
| CN108055011A (en) * | 2017-12-12 | 2018-05-18 | 无锡中普微电子有限公司 | Multimode radio-frequency power amplifier |
| CN109673098A (en) * | 2018-12-31 | 2019-04-23 | 聚光科技(杭州)股份有限公司 | A kind of radio-frequency power supply adjustment circuit module and its control method |
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