CN203085550U - WOLED and display device - Google Patents
WOLED and display device Download PDFInfo
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- CN203085550U CN203085550U CN 201220749730 CN201220749730U CN203085550U CN 203085550 U CN203085550 U CN 203085550U CN 201220749730 CN201220749730 CN 201220749730 CN 201220749730 U CN201220749730 U CN 201220749730U CN 203085550 U CN203085550 U CN 203085550U
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Abstract
The utility model discloses a white light organic light emitting diode WOLED and display device, including relative array substrate and the colored filter substrate that sets up: the array substrate comprises an anode array and a pixel definition layer for defining a pixel area; an organic light emitting layer covering the pixel defining layer and the anode electrode; a cathode layer covering the organic light emitting layer; and a metal reflecting layer is arranged between the organic light-emitting layer and the pixel defining layer. The WOLED light leakage phenomenon in the prior art can be better avoided, and the image display quality of the display equipment is improved.
Description
Technical field
The utility model relates to the Display Technique field, especially relates to a kind of white organic LED (WOLED, White Organic Light Emitting Diode) and a kind of display device.
Background technology
Flourish along with the flat-panel screens technology, Organic Light Emitting Diode (OLED, Organic Light Emitting Diode) with traditional LCD (LCD, Liquid Crystal Display) compares, except more frivolous, have more self-luminous, low power consumption, do not need backlight, good characteristics such as the restriction of no visual angle and high reaction rate, become the main flow of flat-panel screens technology of future generation.
For realizing full-colorization of OLED display, a kind of mode is to realize by white OLED (WOLED, White Organic Light Emitting Diode) and chromatic filter layer (CF, Color Filter) stack.Wherein, the stacked process that adds of WOLED and CF does not need masking process accurately, just can realize the high-resolution of OLED display.As shown in Figure 1; comprise thin-film transistor (TFT forming respectively in the prior art; Thin Film Transistor) the WOLED luminescent layer of array base palte and including after the chromatic filter layer of edge protection layer PDL; the tft array substrate and the CF layer that form are aimed at; pressing, thus the WOLED display unit formed.
In the prior art, close when handling carrying out tft array substrate and CF laminating, the slit that can have certain numerical value between CF layer and the WOLED luminescent layer, and because the WOLED luminescent layer has self luminous light source characteristic, as shown in Figure 1, the light that organic light-emitting units sends, arrive in the process of color membrane substrates in side direction, this slit can make the WOLED display side direction light leak of making, thereby causes the product colour mixture, and then influences the quality of display unit.
The utility model content
The utility model embodiment provides WOLED and display device, can avoid the WOLED light leakage phenomena that exists in the prior art preferably, improves the image displaying quality of display device.
A kind of have a white organic LED WOLED, comprises the array base palte and the colored optical filtering substrates that are oppositely arranged, comprising: described array base palte comprises the pixel defining layer of anode array and definition pixel region; Cover the organic luminous layer of described pixel defining layer and anode electrode; Cover the cathode layer of described organic luminous layer; Be provided with metallic reflector between described organic luminous layer and the described pixel defining layer.
A kind of display device comprises above-mentioned white organic LED WOLED.
Adopt technique scheme, comprise the array base palte and the colored optical filtering substrates that are oppositely arranged, comprising: described array base palte comprises the pixel defining layer of anode array and definition pixel region; Cover the organic luminous layer of described pixel defining layer and anode electrode; Cover the cathode layer of described organic luminous layer; Be provided with metallic reflector between described organic luminous layer and the described pixel defining layer, the array base palte and the colored optical filtering substrates that form are fitted, form WOLED, owing on array base palte, increased reflective metal film, when fitting, though still there is the space between array base palte and the color membrane substrates, but the light source that the WOLED luminescent layer self is launched, can be reflected by metallic reflector, therefore can avoid the WOLED display light leakage phenomena that exists in the prior art preferably, improve the image displaying quality of display unit.
Description of drawings
Fig. 1 is in the prior art, the WOLED display unit profile that passes through WOLED and CF pressing formation of proposition;
Fig. 2 a is among the utility model embodiment, and the WOLED display device structure of proposition is formed schematic diagram;
Fig. 2 b ~ Fig. 2 d is among the utility model embodiment, and the structure of the array base palte that comprises anode array of the formation of proposition is formed schematic diagram;
Fig. 3 a is among the utility model embodiment, the manufacturing WOLED display unit method flow diagram of proposition;
Fig. 3 b is among the utility model embodiment, the array base palte forming process schematic diagram of proposition;
Fig. 3 c is among the utility model embodiment, and the array base-plate structure of the deposition of reflective metallic film of proposition is formed schematic diagram;
Fig. 3 d is among the utility model embodiment, and the array base-plate structure of the formation reflective metal layer of proposition is formed schematic diagram;
Fig. 3 e is among the utility model embodiment, and the pixel defining layer pattern of proposition is formed schematic diagram;
Fig. 3 f is among the utility model embodiment, and the array base-plate structure behind the evaporation negative electrode of proposition is formed schematic diagram;
Fig. 4 is among the utility model embodiment, and the WOLED display device structure of proposition is formed schematic diagram;
Fig. 5 is among the utility model embodiment, the WOLED display unit operation principle schematic diagram of the increase metallic reflector of proposition.
Embodiment
There is light leakage phenomena at the WOLED display that exists in the prior art, make the relatively poor problem of image displaying quality of display unit, the technical scheme that the utility model embodiment proposes here, by deposition of reflective metallic film on array base palte, after making that the applying of array base palte and color membrane substrates is handled, even there is the space, the reflective metal film of deposition also can be returned the source reflection of WOLED luminescent layer emission, avoid the colour mixture problem that WOLED display side direction light leakage phenomena causes of problem in the prior art preferably, improved the display quality of WOLED display preferably.
At length set forth to the main realization principle of the utility model embodiment technical scheme, embodiment and to the beneficial effect that should be able to reach below in conjunction with each accompanying drawing.
The utility model embodiment proposes a kind of WOLED display unit here, shown in Fig. 2 a, comprises the array base palte 601 and the colored optical filtering substrates 602 that are oppositely arranged, comprising:
Described array base palte 601 comprises the pixel defining layer 304 of anode array and definition pixel region, cover the organic luminous layer 306 of described pixel defining layer 304 and anode electrode, cover the cathode layer 307 of described organic luminous layer 306, be provided with metallic reflector 305 between described organic luminous layer 306 and the described pixel defining layer 304.
Particularly, organic luminous layer 306 is provided with organic light-emitting units (also not shown among the figure), and described organic light-emitting units can be the white-light emitting unit.
Particularly, described pixel defining layer 304 can but to be not limited to be acrylic based material or organic resin material.
Particularly, described metallic reflector 305 can be a light reflectivity greater than 80%, thickness is the metallic diaphragm of 80nm ~ 500nm.
Preferably, described metallic reflector 305 is metallic aluminium rete or argent rete.
In concrete the enforcement, comprise that the array base palte of anode array also comprises:
At the TFT rete 302 of deposition on 301 on the substrate, and the pixel electrode layer 303 of deposition on the TFT rete 302.Wherein, in the TFT rete 302, comprise the TFT zone of formation.In the TFT zone, be formed with source region, gate electrode, source electrode and drain electrode (not shown among Fig. 2 a).
Particularly, in TFT rete 302, the TFT zone comprises grid, active area, source area and the drain region of formation.Can adopt chemical vapor deposition method deposit thickness on active area is the gate insulation layer of 100nm ~ 150nm, the material of gate insulation layer can but to be not limited to be silicon dioxide or silicon nitride etc.After forming gate insulation layer, on the substrate that forms gate insulation layer, form grid by depositing operation and composition technology.Wherein grid is positioned on the gate insulation layer of active area.Form after the grid, carry out doping process and handle, so that active area forms source area, active layer, drain region.On TFT rete 302, form pixel electrode rete 303 by depositing operation, then based on composition technology, on pixel electrode rete 303, form anode, thereby form the array base palte that comprises anode array.
Preferably, setting forth the structure that originally comprises the anode array substrate below in conjunction with concrete accompanying drawing forms:
Shown in Fig. 2 b, TFT rete 302 is included in the polysilicon layer (not shown) of deposition on the substrate 301, and described polysilicon layer is carried out photoetching, etching technics processing according to required figure, is formed with source region 3021 and pixel electrode district 3022.
Shown in Fig. 2 c,, on active area 3021, form gate insulation layer 3023 by depositing operation and composition PROCESS FOR TREATMENT.Wherein gate insulation layer can be silicon nitride or silicon dioxide.
Shown in Fig. 2 d, based on the composition PROCESS FOR TREATMENT, on described substrate, form grid 3024, the grid of formation is positioned on the gate insulation layer 3023 on the described active area 3021.Active area and the pixel electrode district that forms carried out the doping process processing, so that active area forms source area, active layer, drain region, described pixel electrode district forms pixel electrode layer.Wherein, described grid, active layer, source area and drain region constitute the TFT zone, and active layer is between source-drain electrode area.Formation comprises the array base palte of anode array.
Correspondingly, the utility model is implemented also to propose a kind of display device here, and this display device comprises the WOLED of the above-mentioned proposition of the utility model embodiment.
The utility model embodiment proposes the method for a kind of WOLED of manufacturing here, shown in Fig. 3 a, and concrete technological process such as following:
Step 21 forms the array base palte that comprises anode array based on composition technology on substrate, and forms colored optical filtering substrates based on composition technology.
Need to prove that in the technical scheme that the utility model embodiment proposes, the described array base palte that comprises anode array is that example is described in detail with Thin Film Transistor (TFT) (TFT, Thin Film Transistor) array base palte here.And, in the technical scheme that the utility model embodiment proposes here, only provide main manufacturing process at the array base palte that comprises anode array, in concrete the enforcement, can make the array base palte that comprises anode array that the utility model embodiment proposes here with reference to the manufacture method of tft array substrate in the prior art.
Wherein, the concrete technological process that forms the array base palte that comprises anode array is: shown in Fig. 3 b, form TFT rete 302 on substrate 301, wherein, in the TFT rete 302 that forms, comprise the TFT zone of formation.In the TFT zone, be formed with source region, gate electrode, source electrode and drain electrode (not shown among Fig. 3 a).
Particularly, in TFT rete 302, the TFT zone comprises grid, active area, source area and the drain region of formation.Can adopt chemical vapor deposition method deposit thickness on active area is the gate insulation layer of 100nm ~ 150nm, the material of gate insulation layer can but to be not limited to be silicon dioxide or silicon nitride etc.After forming gate insulation layer, on the substrate that forms gate insulation layer, form grid by depositing operation and composition technology.Wherein grid is positioned on the gate insulation layer of active area.Form after the grid, carry out doping process and handle, so that active area forms source area, active layer, drain region.
On TFT rete 302, form pixel electrode rete 303 by depositing operation, then based on composition technology, on pixel electrode rete 303, form anode, thereby form the array base palte that comprises anode array.
Particularly, described substrate can but to be not limited to be the substrate of arbitrary forms such as transparency carrier, ceramic substrate or metal substrate, in the technical scheme that the utility model embodiment proposes here, this is not limited.
Wherein, the manufacturing process of the colored optical filtering substrates that proposes in the manufacturing process of colored optical filtering substrates and the prior art is identical, and the utility model embodiment repeats no more here.
Wherein, shown in Fig. 3 c, on the array base palte that comprises anode array that forms, deposit transparent organic thin film layer 304 and reflective metal film 305 successively.The material of transparent organic film 304 can but to be not limited to be acrylic based material or organic resin material.The thickness of the transparent organic film of deposition can be between 1um ~ 2.5um, preferably, can but to be not limited to be 1.5um or 2um.In the technical scheme that the utility model embodiment proposes here, this is not limited, can change according to practical application request.
Particularly, the material of the reflective metal film 305 of deposition can be a light reflectivity greater than 80%, thickness is the metallic diaphragm of 80nm ~ 500nm.This metallic diaphragm can but to be not limited to be metallic aluminium rete or argent rete.
Preferably, in the technical scheme that the utility model embodiment proposes here, the material of the reflective metal film 305 of deposition is the argent rete with higher light reflectivity.
Wherein, shown in Fig. 3 d, can carry out composition technologies such as mask, exposure, development, photoetching, etching, remove the reflective metal film that is positioned at the anode electrode top the reflective metal film 305 of deposition.
Wherein, can adopt dry etching to remove transparent organic film directly over the described anode electrode, expose described anode electrode, form the pixel definition pattern.
Particularly, the profile of pixel defining layer 304 can be with reference to shown in Fig. 3 e, and pixel defining layer 304 covers the pixel electrode periphery.
Particularly, in step 23 ~ step 24, when carrying out patterned process, can adopt mask plate to handle accordingly with same pattern.
Need to prove, in above-mentioned steps 23 ~ step 24, be a kind of preferably implementation that the utility model embodiment proposes here.In concrete the enforcement, array base palte to after deposit transparent organic film and the reflective metal film successively can also adopt the mask plate with identical patterns, and transparent organic film and reflective metal film are carried out patterning together, expose anode electrode, form the pixel definition layer pattern.Or to the array base palte after deposit transparent organic film and the reflective metal film successively, adopt same mask plate, reflective metal film and transparent organic film to deposition carries out patterned process respectively, spills anode electrode cruelly, forms the pixel definition pattern.
Preferably, the mask plate that the patterning reflective metal film uses can but to be not limited to be the employed pixel defining layer mask plate of patterning pixel defining layer, also can be the mask plate with pixel definition layer pattern of additional customized.
Preferably, in the technical scheme that the utility model embodiment proposes here, to the reflective metal film of deposition when carrying out patterning, employing be the pixel defining layer mask plate, can will use the quantity of mask plate less preferably like this, reduce the production cost of enterprise.
Wherein, on the array base palte that forms the pixel definition pattern, form the OLED device.Particularly, can adopt thin film deposition processes on the array base palte that forms the pixel definition pattern, to form hole transmission layer, organic luminous layer, electron transfer layer, OLED top electrodes successively, form the OLED device.
Shown in Fig. 3 f, on the array base palte that forms the pixel definition pattern, evaporation organic light-emitting units 306 and negative electrode 307 successively, thus form array base palte 401.
Particularly, the organic light-emitting units 306 of evaporation can be the white-light emitting unit.
Wherein, as shown in Figure 4, with processings of fitting of the array base palte 401 that forms and colored optical filtering substrates 402, formation WOLED display unit.
Particularly, identical in the manufacturing process of colored optical filtering substrates and the prior art, the utility model embodiment no longer gives unnecessary details here.
The technical scheme that adopts the utility model embodiment to propose, the WOLED profile that forms as shown in Figure 5, owing to increased metallic reflector with reflective function, thereby make the light that luminescence unit sends, arrive in the process of side direction colored optical filtering substrates, running into the metallic reflector with high reflectance is reflected as shown in Figure 5, thereby, even after applying, still there is the slit, also can reduce the side direction light leakage phenomena preferably, realize reducing the purpose of colour mixture, and then improved the image displaying quality of WOLED.
The technical scheme that adopts the utility model embodiment to propose here, when making array base palte, by deposition layer of metal reflector, the feasible light that sends from organic light-emitting units, reach at a certain angle in the process of color membrane substrates, can be reflected by metallic reflector, thereby reduce WOLED side direction light leakage phenomena, realize reducing the purpose of colour mixture, improved display quality preferably.
Although described preferred embodiment of the present utility model, in a single day those skilled in the art get the basic creative notion of cicada, then can make other change and modification to these embodiment.So claims are intended to all changes and the modification that are interpreted as comprising preferred embodiment and fall into the utility model scope.
Obviously, those skilled in the art can carry out various changes and modification to the utility model and not break away from spirit and scope of the present utility model.Like this, if of the present utility model these are revised and modification belongs within the scope of the utility model claim and equivalent technologies thereof, then the utility model also is intended to comprise these changes and modification interior.
Claims (6)
1. a white organic LED WOLED comprises the array base palte and the colored optical filtering substrates that are oppositely arranged, it is characterized in that, comprising:
Described array base palte comprises the pixel defining layer of anode array and definition pixel region;
Cover the organic luminous layer of described pixel defining layer and anode electrode;
Cover the cathode layer of described organic luminous layer;
Be provided with metallic reflector between described organic luminous layer and the described pixel defining layer.
2. as claim 1 described WOLED, it is characterized in that described organic luminous layer is provided with organic light-emitting units, described organic light-emitting units is the white-light emitting unit.
3. WOLED as claimed in claim 1 is characterized in that, described pixel defining layer is acrylic based material or organic resin material.
4. WOLED as claimed in claim 1 is characterized in that, described metallic reflector is a light reflectivity greater than 80%, thickness is the metallic diaphragm of 80nm ~ 500nm.
5. WOLED as claimed in claim 4 is characterized in that, described metallic reflector is metallic aluminium rete or argent rete.
6. a display device is characterized in that, comprises as the arbitrary described white organic LED WOLED of claim 1 ~ 5.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220749730 CN203085550U (en) | 2012-12-31 | 2012-12-31 | WOLED and display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220749730 CN203085550U (en) | 2012-12-31 | 2012-12-31 | WOLED and display device |
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| CN203085550U true CN203085550U (en) | 2013-07-24 |
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| CN 201220749730 Expired - Lifetime CN203085550U (en) | 2012-12-31 | 2012-12-31 | WOLED and display device |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103268921A (en) * | 2012-12-31 | 2013-08-28 | 上海天马微电子有限公司 | method for manufacturing WOLED, WOLED and display device |
| TWI549330B (en) * | 2014-06-04 | 2016-09-11 | 群創光電股份有限公司 | Organic light emitting diode display |
| CN107359258A (en) * | 2017-06-01 | 2017-11-17 | 深圳市华星光电技术有限公司 | Display base plate and its manufacture method, display device |
| CN107527941A (en) * | 2017-08-31 | 2017-12-29 | 黑牛食品股份有限公司 | A kind of organic light emitting display and its manufacture method |
| CN111029482A (en) * | 2019-12-17 | 2020-04-17 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display device |
| CN112599581A (en) * | 2020-12-14 | 2021-04-02 | 北京维信诺科技有限公司 | Display panel, preparation method thereof and display device |
-
2012
- 2012-12-31 CN CN 201220749730 patent/CN203085550U/en not_active Expired - Lifetime
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103268921A (en) * | 2012-12-31 | 2013-08-28 | 上海天马微电子有限公司 | method for manufacturing WOLED, WOLED and display device |
| CN103268921B (en) * | 2012-12-31 | 2016-04-20 | 上海天马微电子有限公司 | method for manufacturing WOLED, WOLED and display device |
| TWI549330B (en) * | 2014-06-04 | 2016-09-11 | 群創光電股份有限公司 | Organic light emitting diode display |
| US9711759B2 (en) | 2014-06-04 | 2017-07-18 | Innolux Corporation | Organic light emitting diode display |
| CN107359258A (en) * | 2017-06-01 | 2017-11-17 | 深圳市华星光电技术有限公司 | Display base plate and its manufacture method, display device |
| CN107527941A (en) * | 2017-08-31 | 2017-12-29 | 黑牛食品股份有限公司 | A kind of organic light emitting display and its manufacture method |
| CN107527941B (en) * | 2017-08-31 | 2019-09-17 | 维信诺科技股份有限公司 | A kind of organic light emitting display and its manufacturing method |
| US11289665B2 (en) | 2017-08-31 | 2022-03-29 | Visionox Technology Inc. | Organic light-emitting display screen and manufacturing method thereof |
| CN111029482A (en) * | 2019-12-17 | 2020-04-17 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display device |
| CN111029482B (en) * | 2019-12-17 | 2021-01-01 | 深圳市华星光电半导体显示技术有限公司 | Display panel and display device |
| CN112599581A (en) * | 2020-12-14 | 2021-04-02 | 北京维信诺科技有限公司 | Display panel, preparation method thereof and display device |
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Granted publication date: 20130724 |