CN202939205U - Tmr current sensor - Google Patents
Tmr current sensor Download PDFInfo
- Publication number
- CN202939205U CN202939205U CN 201220633765 CN201220633765U CN202939205U CN 202939205 U CN202939205 U CN 202939205U CN 201220633765 CN201220633765 CN 201220633765 CN 201220633765 U CN201220633765 U CN 201220633765U CN 202939205 U CN202939205 U CN 202939205U
- Authority
- CN
- China
- Prior art keywords
- layer
- ring
- tmr
- current sensor
- brachium pontis
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Landscapes
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
Abstract
The utility model discloses a TMR current sensor. The TMR current sensor comprises a chip, a printed circuit board, an insulating ring and a magnetic shielding ring, wherein the insulating ring is arranged in the magnetic shielding ring; a current wire to be detected passes through the inner space of the insulating ring; the chip is packaged on the printed circuit board; the chip and the printed circuit board are arranged in the magnetic shielding ring; the chip and the printed circuit board are positioned between the insulating ring and the magnetic shielding ring; the circuit structure of the chip is a Wheatstone bridge; each bridge arm of the Wheatstone bridge comprises at least one TMR element; the TMR elements of the first bridge arm are the same as those of the second bridge arm; the TMR elements of the third bridge arm are the same as those of the fourth bridge arm; and the TMR elements are of a multilayered membrane structure. The TMR current sensor is high in measurement accuracy, large in measurement range, small in size, light in weight and low in cost, and can be used for measuring the current.
Description
Technical field
The utility model relates to the current sensor technical field, particularly a kind of tunnel magneto resistance (TMR) current sensor.
Background technology
In prior art, current sensor generally adopts Hall element as sensitive element, the big or small measurement realized electric current to be measured in magnetic field produced by detecting electric current to be measured.Except Hall element, existing current sensor also adopts anisotropic magnetoresistance (AMR) element or giant magnetoresistance (GMR) element as sensitive element, and its measuring principle is identical with the current sensor that adopts Hall element.
Because the sensitivity of Hall element is lower, adopt the current sensor of Hall element usually to utilize poly-magnetic effect unshakable in one's determination to improve its measuring accuracy.Adopt the current sensor of Hall element to comprise three kinds of open ring type, closed-loop type and dot matrixs.
The iron core that adopts the open ring type current sensor of Hall element to take with air gap is magnetic conductor, and Hall element is placed in air gap unshakable in one's determination.The measuring accuracy of the open ring type current sensor of employing Hall element is lower, generally can reach 10
-2Magnitude.Because there is magnetic hysteresis loss in iron core, when electric current to be measured fluctuates in a big way, between the magnetic induction density in air gap unshakable in one's determination and electric current to be measured variation relation will with linear relationship generation deviation, particularly electric current to be measured than hour, the deviation of the two is particularly evident.Therefore, when electric current to be measured hour, adopt the measuring error of the open ring type current sensor of Hall element sharply to increase.
Adopt the closed-loop type current sensor of Hall element to have made some improvements on the basis of above-mentioned open ring type current sensor.Be evenly arranged the balance winding on the iron core with air gap of the closed-loop type current sensor of employing Hall element, Hall element is not for directly measuring the size of electric current to be measured, but for measuring residual flux, and the electric current that the Hall voltage of Hall element output is controlled a certain size is by the balance winding.Under stable state, balance winding and electric current to be measured keep good linear relationship, and the coiling that its scale-up factor is the balance winding is pounded number and pounded several ratio with electric current coiling to be measured, can obtain the size of electric current to be measured by the size of current in detection balance winding.Adopt the closed-loop type current sensor of Hall element reliable and stable, measuring accuracy can reach 10
-3Magnitude.Therefore but the driving force of the circuit of balance winding is limited, the cost of manufacture for the above-mentioned closed-loop type current sensor of measuring large electric current is higher.
Adopt the dot matrix current sensor of Hall element to adopt the array formed by a plurality of Hall elements as sensitive element.By a plurality of Hall elements by predefined path evenly, be distributed on printed circuit board (PCB) symmetrically, and the plane at each Hall element place through the central axis in path.The array that a plurality of Hall elements are formed is placed in columnar shielding cylinder.Therefore above-mentioned lattice type Hall electric current transducer does not need iron core, has overcome that linearity variation, the dynamic range caused unshakable in one's determination is little, volume is large, heavy, high in cost of production shortcoming.But, because the sensitivity of Hall element itself is lower, the measuring accuracy of the dot matrix current sensor of employing Hall element is lower.
Compare as the current sensor of sensitive element with adopting Hall element, adopt the GMR element to increase as the measuring accuracy of the current sensor of sensitive element.But, because the range of linearity of GMR element itself is less, adopt the GMR element less as the measurement range of the current sensor of sensitive element.
Be starved of the TMR current sensor that a kind of measuring accuracy is high, measurement range is large, volume is little, lightweight, cost is low.
Summary of the invention
The purpose of this utility model is to provide a kind of TMR current sensor, its measuring accuracy than high, measurement range than large, volume is little.The technical solution adopted in the utility model is:
The TMR current sensor that the utility model provides comprises chip, printed circuit board (PCB), dead ring and magnetic shield ring; Described dead ring is located in described magnetic shield ring, the interior space of described dead ring is passed for current lead to be measured, described chip package is on described printed circuit board (PCB), described chip and described printed circuit board (PCB) are located in described magnetic shield ring, and described chip and described printed circuit board (PCB) are between described dead ring and described magnetic shield ring.
The circuit structure of described chip is Wheatstone bridge, described Wheatstone bridge comprises the first brachium pontis, the second brachium pontis, the 3rd brachium pontis and the 4th brachium pontis, each brachium pontis of described Wheatstone bridge comprises at least one TMR element, described the first brachium pontis is identical with the TMR element of described the second brachium pontis, and described the 3rd brachium pontis is identical with the TMR element of described the 4th brachium pontis.
Described TMR element is multi-layer film structure, described TMR element comprises and is deposited on successively on-chip insulation course, pinning layer, nailed layer, tunnel barrier layer and magnetic free layer, described magnetic free layer is ferromagnetic layer, and the magnetic moment direction of described magnetic free layer can change with the change of the size and Orientation of external magnetic field, described nailed layer is ferromagnetic layer or by ferromagnetic layer, the composite bed that Ru layer and ferromagnetic layer form, the magnetic moment direction of described nailed layer is pinned at a direction by described pinning layer, and the magnetic moment direction that is more than or equal to the range of TMR element and is less than described nailed layer under the external magnetic field of Saturation field of nailed layer at numerical value can remain unchanged, described pinning layer is inverse ferric magnetosphere.
Preferably, described dead ring comprises the first insulation semi-ring and the second insulation semi-ring, and described the first insulation semi-ring and described the second insulation semi-ring coordinate and can form a complete dead ring.Described magnetic shield ring comprises the first magnetic shield semi-ring and the second magnetic shield semi-ring, and the first magnetic shield semi-ring and described the second magnetic shield semi-ring coordinate and can form a complete magnetic shield ring.
Preferably, the TMR element of each brachium pontis of described Wheatstone bridge is identical.
Preferably, described printed circuit board (PCB) is provided with a plurality of pins, and the input end of described Wheatstone bridge and output terminal are electrically connected to described pin.
Preferably, when each brachium pontis of described Wheatstone bridge comprises a plurality of TMR element, the plurality of TMR element series connection and/or in parallel.
Preferably, the material of described nailed layer and described magnetic free layer is Fe, Co, Ni, FeCo, FeNi, FeCoB or FeCoNi.
Preferably, described nailed layer is the composite bed formed by FeCo layer, Ru layer and FeCo layer.
Preferably, the material of described pinning layer is PtMn, IrMn or FeMn.
Preferably, the material of described tunnel barrier layer is MgO or Al2O3.
Advantage of the present utility model:
(1) TMR current sensor of the present utility model adopts the TMR element as sensitive element, and TMR element employing multi-layer film structure, so its measuring accuracy is higher, measurement range is larger.
(2) TMR current sensor of the present utility model does not need to use iron core, so its volume is little, lightweight, cost is low.
The accompanying drawing explanation
The schematic diagram of the TMR current sensor that Fig. 1 provides for the utility model embodiment mono-.
The equivalent circuit diagram that Fig. 2 is Wheatstone bridge.
The multi-layer film structure schematic diagram that Fig. 3 is the TMR element.
The resistance value R that Fig. 4 is the TMR element is with the change curve of external magnetic field H.
The schematic diagram of the TMR current sensor that Fig. 5 provides for the utility model embodiment bis-.
Embodiment
Below in conjunction with concrete drawings and Examples, the utility model is described in further detail.
As shown in Figure 1, Figure 2, Figure 3, Figure 4:
Embodiment mono-
The TMR current sensor that the present embodiment provides comprises chip 1, printed circuit board (PCB) (PCB) 2, dead ring 3 and magnetic shield ring 4, as shown in Figure 1.Dead ring 3 is located in magnetic shield ring 4.The interior space of dead ring 3 is passed for current lead to be measured, for making electrical isolation between current lead to be measured and described TMR current sensor.Chip 1 is encapsulated on printed circuit board (PCB) 2.Chip 1 and printed circuit board (PCB) 2 are located in magnetic shield ring 4, and described chip 1 and described printed circuit board (PCB) 2 are between dead ring 3 and magnetic shield ring 4.Magnetic shield ring 4 is for shielding the interference to described TMR current sensor of magnetic field beyond the TMR current sensor, thereby improves the measuring accuracy of described TMR current sensor.Printed circuit board (PCB) 2 is provided with a plurality of pins 5.
The circuit structure of chip 1 adopts Wheatstone bridge 6.As shown in Figure 2, Wheatstone bridge 6 comprises four brachium pontis, i.e. the first brachium pontis 61, the second brachium pontis 62, the 3rd brachium pontis 63 and the 4th brachium pontis 64.Two input ends of Wheatstone bridge 6 are respectively first input end In1 and the second input end In2, wherein the second input end In2 ground connection for example.Two output terminals of Wheatstone bridge 6 are respectively the first output terminal Out1 and the second output terminal Out2.The first input end In1 of Wheatstone bridge 6, the second input end In2, the first output terminal Out1 and the second output terminal Out2 are electrically connected to the pin 5 on printed circuit board (PCB) 2.Each brachium pontis of Wheatstone bridge 6 comprises at least one TMR (tunnel magneto resistance) element 7.When each brachium pontis of Wheatstone bridge 6 comprises a plurality of TMR element 7, the plurality of TMR element 7 series connection and/or in parallel.The first brachium pontis 61 of Wheatstone bridge 6 is identical with the TMR element 7 of the second brachium pontis 62; Its 3rd brachium pontis 63 is identical with the TMR element 7 of the 4th brachium pontis 64.Preferably, the TMR element 7 of each brachium pontis of Wheatstone bridge 6 is identical.
In the present embodiment, TMR element 7 adopts multi-layer film structure, and as shown in Figure 3, TMR element 7 comprises insulation course 72, pinning layer 73, nailed layer 74, tunnel barrier layer 75 and the magnetic free layer 76 be deposited on successively on substrate 71.Nailed layer 74 and magnetic free layer 76 are ferromagnetic layer, and its material is for example Fe, Co, Ni, FeCo, FeNi, FeCoB or FeCoNi.Nailed layer 74 can be also the composite bed formed by ferromagnetic layer, Ru layer and ferromagnetic layer, the composite bed for example formed by FeCo layer, Ru layer and FeCo layer.Exchange-coupling interaction between pinning layer 73 and nailed layer 74 makes the magnetic moment direction 77 of nailed layer 74 be pinned at a direction, and the magnetic moment direction 77 that is more than or equal to the range of TMR element 7 and is less than described nailed layer 74 under the external magnetic field of Saturation field of nailed layer 74 at numerical value can remain unchanged.Pinning layer 73 is inverse ferric magnetosphere, and its material is for example PtMn, IrMn or FeMn.The material of tunnel barrier layer 75 is for example MgO or Al
2O
3.The magnetic moment direction 78 of magnetic free layer 76 can change with the change of the size and Orientation of external magnetic field H.Under the effect of outside magnetic field H, the direction that the magnetic moment direction 78 of magnetic free layer 76 can be parallel from the magnetic moment direction 77 with nailed layer 74 is progressively changed into the antiparallel direction of magnetic moment direction 77 with nailed layer 74, and vice versa.The material of substrate 71 adopts silicon, quartz, pyroceram, GaAs or AlTiC usually.In the present embodiment, the area of insulation course 72 is greater than the area of pinning layer 73.
Below simply introduce the principle of work of TMR element 7.The size of the resistance value R of TMR element 7 is relevant with the relative orientation of the magnetic moment of magnetic free layer 76 and nailed layer 74.In the ideal situation, the resistance value R of TMR element with the change curve of external magnetic field H as shown in Figure 4.Under the effect of outside magnetic field H, when the magnetic moment direction 78 of magnetic free layer 76 is parallel with the magnetic moment direction 77 of nailed layer 74, the resistance value R minimum of TMR element 7, its resistance value is for example R
L, be called TMR element 7 in low resistance state; When magnetic moment direction 77 antiparallel of the magnetic moment direction 78 of magnetic free layer 76 and nailed layer 74, the resistance value R maximum of TMR element 7, its resistance value is for example R
H, be called TMR element 7 in high-impedance state.When between high-impedance state and low resistance state, the resistance value R of TMR element 7 is along with the change of external magnetic field H is linear change.Between high-impedance state and low resistance state, scope (the Hs)-(+Hs) of external magnetic field H that the resistance value R of TMR element 7 is the interval correspondence of linear change is the measurement range of TMR element 7, and positive sign "+" wherein and negative sign "-" only mean the direction of external magnetic field H.The end value Hs of the measurement range of TMR element 7, the maximal value Hs of external magnetic field H that the resistance value R of TMR element 7 is the interval correspondence of linear change is defined as the range of TMR element 7.The resistance value R of TMR element 7 is with the slope of the change curve of external magnetic field H, and the resistance value R of TMR element 7 is defined as the sensitivity of TMR element 7 with the rate of change of external magnetic field H.
In the present embodiment, the first brachium pontis 61 of Wheatstone bridge 6 is identical with the TMR element 7 of the second brachium pontis 62, and the 3rd brachium pontis 63 is identical with the TMR element 7 of the 4th brachium pontis 64.The first brachium pontis 61 of Wheatstone bridge 6 is identical with the magnetic moment direction 77 of the nailed layer 74 of the TMR element 7 of the second brachium pontis 62; Its 3rd brachium pontis 63 is identical with the magnetic moment direction 77 of the nailed layer 74 of the TMR element 7 of the 4th brachium pontis 64.The resistance value R of the TMR element 7 of each brachium pontis of Wheatstone bridge 6 causes the resistance change of each brachium pontis with the variation of external magnetic field H, the resistance change of each brachium pontis and then cause the first output terminal Out1 of Wheatstone bridge 6 and the output voltage between the second output terminal Out2 changes.Can obtain the size and Orientation of external magnetic field H according to the output voltage of Wheatstone bridge 6.
While using described TMR current sensor measurement electric current to be measured, current lead to be measured is passed in dead ring 3, when electric current to be measured passes through current lead to be measured, electric current to be measured will produce magnetic field, and the Wheatstone bridge 6 of chip 1 can obtain the size of electric current to be measured by the magnetic field size that detects electric current generation to be measured.
Embodiment bis-
The TMR current sensor that the present embodiment provides comprises chip 1, printed circuit board (PCB) 2, dead ring 3 and magnetic shield ring 4, as shown in Figure 5.In the present embodiment, dead ring 3 comprises two insulation semi-rings, i.e. the first insulation semi-ring 31 and the second insulation semi-ring 32, and the first insulation semi-ring 31 and the second insulation semi-ring 32 coordinate and can form a complete dead ring 3; Magnetic shield ring 4 comprises two magnetic shield semi-rings, i.e. the first magnetic shield semi-ring 41 and the second magnetic shield semi-ring 42, and the first magnetic shield semi-ring 41 and the second magnetic shield semi-ring 42 coordinate and can form a complete magnetic shield ring 4.Dead ring 3 is located in magnetic shield ring 4.The interior space of dead ring 3 is passed for current lead to be measured, for making electrical isolation between current lead to be measured and described TMR current sensor.Chip 1 is encapsulated on printed circuit board (PCB) 2.Chip 1 and printed circuit board (PCB) 2 are located in magnetic shield ring 4, and between dead ring 3 and magnetic shield ring 4.Magnetic shield ring 4 is for shielding the interference of external magnetic field to described TMR current sensor, thereby improves the measuring accuracy of described TMR current sensor.Printed circuit board (PCB) 2 is provided with a plurality of pins 5.The input end of Wheatstone bridge 6 and output terminal are electrically connected to described pin 5.
The Wheatstone bridge 6 of the chip 1 of the present embodiment is roughly the same with embodiment mono-.The TMR element 7 of each brachium pontis of the Wheatstone bridge 6 of the present embodiment is identical; And, in embodiment mono-, the first brachium pontis 61 of Wheatstone bridge 6 is identical with the TMR element 7 of the second brachium pontis 62, the 3rd brachium pontis 63 is identical with the TMR element 7 of the 4th brachium pontis 64; Except this difference, the other side of the Wheatstone bridge 6 of the present embodiment is all identical with embodiment mono-.
Principle of work and the using method of the TMR current sensor of the present embodiment are identical with embodiment mono-.
With the TMR current sensor of embodiment mono-, compare, the advantage of the TMR current sensor of the present embodiment is to be convenient to install.
Should be appreciated that the above detailed description of the technical solution of the utility model being carried out by preferred embodiment is illustrative and not restrictive.The technical scheme that those of ordinary skill in the art can put down in writing each embodiment on the basis of reading the utility model instructions is modified, or part technical characterictic wherein is equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution break away from the spirit and scope of each embodiment technical scheme of the utility model.
Claims (9)
1. a TMR current sensor, it is characterized in that: this TMR current sensor comprises chip (1), printed circuit board (PCB) (2), dead ring (3) and magnetic shield ring (4);
Described dead ring (3) is located in described magnetic shield ring (4), the interior space of described dead ring (3) is passed for current lead to be measured, described chip (1) is encapsulated on described printed circuit board (PCB) (2), described chip (1) and described printed circuit board (PCB) (2) are located in described magnetic shield ring (4), and described chip (1) and described printed circuit board (PCB) (2) are positioned between described dead ring (3) and described magnetic shield ring (4);
The circuit structure of described chip (1) is Wheatstone bridge (6), described Wheatstone bridge (6) comprises the first brachium pontis (61), the second brachium pontis (62), the 3rd brachium pontis (63) and the 4th brachium pontis (64), each brachium pontis of described Wheatstone bridge (6) comprises at least one TMR element (7), described the first brachium pontis (61) is identical with the TMR element (7) of described the second brachium pontis (62), and described the 3rd brachium pontis (63) is identical with the TMR element (7) of described the 4th brachium pontis (64);
Described TMR element (7) is multi-layer film structure, described TMR element (7) comprises the insulation course (72) be deposited on successively on substrate (71), pinning layer (73), nailed layer (74), tunnel barrier layer (75) and magnetic free layer (76), described magnetic free layer (76) is ferromagnetic layer, and the magnetic moment direction (78) of described magnetic free layer (76) can change with the change of the size and Orientation of external magnetic field, described nailed layer (74) is ferromagnetic layer or by ferromagnetic layer, the composite bed that Ru layer and ferromagnetic layer form, the magnetic moment direction (77) of described nailed layer (74) is pinned at a direction by described pinning layer (73), and the magnetic moment direction (77) that is more than or equal to the range of TMR element (7) and is less than described nailed layer (74) under the external magnetic field of Saturation field of nailed layer (74) at numerical value can remain unchanged, described pinning layer (73) is inverse ferric magnetosphere.
2. TMR current sensor as claimed in claim 1, it is characterized in that: described dead ring (3) comprise the first insulation semi-ring (31) and second the insulation semi-ring (32), and described first the insulation semi-ring (31) and described second the insulation semi-ring (32) cooperation can form a complete dead ring (3); Described magnetic shield ring (4) comprises the first magnetic shield semi-ring (41) and the second magnetic shield semi-ring (42), and the first magnetic shield semi-ring (41) and described the second magnetic shield semi-ring (42) coordinate and can form a complete magnetic shield ring (4).
3. TMR current sensor as claimed in claim 1 or 2, it is characterized in that: the TMR element (7) of each brachium pontis of described Wheatstone bridge (6) is identical.
4. TMR current sensor as claimed in claim 1 or 2, it is characterized in that: described printed circuit board (PCB) (2) is provided with a plurality of pins (5), and the input end of described Wheatstone bridge (6) and output terminal are electrically connected to described pin (5).
5. TMR current sensor as claimed in claim 1 or 2 is characterized in that: when each brachium pontis of described Wheatstone bridge (6) comprises a plurality of TMR elements (7), and the plurality of TMR element (7) series connection and/or in parallel.
6. TMR current sensor as claimed in claim 1 or 2, it is characterized in that: the material of described nailed layer (74) and described magnetic free layer (76) is Fe, Co, Ni, FeCo, FeNi, FeCoB or FeCoNi.
7. TMR current sensor as claimed in claim 1 or 2, is characterized in that: the composite bed of described nailed layer (74) for being formed by FeCo layer, Ru layer and FeCo layer.
8. TMR current sensor as claimed in claim 1 or 2, it is characterized in that: the material of described pinning layer (73) is PtMn, IrMn or FeMn.
9. TMR current sensor as claimed in claim 1 or 2, it is characterized in that: the material of described tunnel barrier layer (75) is MgO or Al
2O
3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220633765 CN202939205U (en) | 2012-11-26 | 2012-11-26 | Tmr current sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220633765 CN202939205U (en) | 2012-11-26 | 2012-11-26 | Tmr current sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202939205U true CN202939205U (en) | 2013-05-15 |
Family
ID=48323436
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220633765 Expired - Lifetime CN202939205U (en) | 2012-11-26 | 2012-11-26 | Tmr current sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202939205U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102928651A (en) * | 2012-11-26 | 2013-02-13 | 王建国 | Triple modular redundancy (TMR) current sensor |
| CN108226822A (en) * | 2016-12-13 | 2018-06-29 | 英飞凌科技股份有限公司 | Magnetic sensor circuit and system and the method for being used to form magnetic sensor circuit |
| CN111811558A (en) * | 2019-04-11 | 2020-10-23 | Zf 腓德烈斯哈芬股份公司 | Sensor device, base part and conductive track-sensor assembly |
| WO2021139695A1 (en) * | 2020-01-10 | 2021-07-15 | 江苏多维科技有限公司 | Magnetoresistive sensor with harmonic widened linear range |
| US11209505B2 (en) | 2019-08-26 | 2021-12-28 | Western Digital Technologies, Inc. | Large field range TMR sensor using free layer exchange pinning |
| US11428758B2 (en) | 2019-08-27 | 2022-08-30 | Western Digital Technologies, Inc. | High sensitivity TMR magnetic sensor |
-
2012
- 2012-11-26 CN CN 201220633765 patent/CN202939205U/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102928651A (en) * | 2012-11-26 | 2013-02-13 | 王建国 | Triple modular redundancy (TMR) current sensor |
| CN108226822A (en) * | 2016-12-13 | 2018-06-29 | 英飞凌科技股份有限公司 | Magnetic sensor circuit and system and the method for being used to form magnetic sensor circuit |
| US10996292B2 (en) | 2016-12-13 | 2021-05-04 | Infineon Technologies Ag | Magnetic sensor circuits and systems and methods for forming magnetic sensor circuits |
| CN111811558A (en) * | 2019-04-11 | 2020-10-23 | Zf 腓德烈斯哈芬股份公司 | Sensor device, base part and conductive track-sensor assembly |
| US11209505B2 (en) | 2019-08-26 | 2021-12-28 | Western Digital Technologies, Inc. | Large field range TMR sensor using free layer exchange pinning |
| US11428758B2 (en) | 2019-08-27 | 2022-08-30 | Western Digital Technologies, Inc. | High sensitivity TMR magnetic sensor |
| WO2021139695A1 (en) * | 2020-01-10 | 2021-07-15 | 江苏多维科技有限公司 | Magnetoresistive sensor with harmonic widened linear range |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6189426B2 (en) | Magnetoresistive gear sensor | |
| US9817084B2 (en) | Single-chip magnetic field sensor bridge | |
| EP2801834B1 (en) | Current sensor | |
| CN202939205U (en) | Tmr current sensor | |
| US9606144B2 (en) | Probe card and method for testing magnetic sensors | |
| CN101788596A (en) | Tunnel junction magneto-resistance effect principle (TMR) current sensors | |
| EP3062119B1 (en) | Push-pull bridge-type magnetic sensor for high-intensity magnetic fields | |
| JP6509231B2 (en) | Single-chip reference bridge magnetic sensor for high magnetic fields | |
| CN102590768A (en) | Magneto-resistance magnetic field gradient sensor | |
| CN111505544B (en) | TMR magnetic field sensor capable of reconstructing sensitive direction and preparation method | |
| CN102928651A (en) | Triple modular redundancy (TMR) current sensor | |
| US11009562B2 (en) | Magnetic field sensing apparatus | |
| JP2017502298A5 (en) | ||
| CN203658561U (en) | Single-chip reference bridge type magnetic sensor for high-intensity magnetic field | |
| CN105136349B (en) | A kind of magnetic pressure transducer | |
| CN203337808U (en) | Single-chip bridge-type magnetic field sensor | |
| CN115541960A (en) | Magneto-resistance sensor, chip and preparation method of chip | |
| CN102901858B (en) | A kind of current sensor | |
| CN210665858U (en) | Large-dynamic-range magnetic sensor assembly | |
| CN102890175B (en) | Magneto-resistor integrated chip for current sensor | |
| JP2012159309A (en) | Magnetic sensor and magnetic sensor apparatus | |
| JP2017139269A (en) | Magnetic sensor, method for manufacturing magnetic sensor, and current sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: WUXI LEER TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: WANG JIANGUO Effective date: 20130619 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20130619 Address after: 204 room 214028, Science Park, 7 Changjiang Road, Wuxi New District, Jiangsu, China Patentee after: WUXI LER TECHNOLOGY Co.,Ltd. Address before: 204 room 214028, Science Park, 7 Changjiang Road, Wuxi New District, Jiangsu, China Patentee before: Wang Jianguo |
|
| CX01 | Expiry of patent term |
Granted publication date: 20130515 |
|
| CX01 | Expiry of patent term |