CN202816962U - Wide band gap multiple hetero-junction tunneling junction structure - Google Patents
Wide band gap multiple hetero-junction tunneling junction structure Download PDFInfo
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- CN202816962U CN202816962U CN 201220294751 CN201220294751U CN202816962U CN 202816962 U CN202816962 U CN 202816962U CN 201220294751 CN201220294751 CN 201220294751 CN 201220294751 U CN201220294751 U CN 201220294751U CN 202816962 U CN202816962 U CN 202816962U
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Abstract
The utility model discloses a wide band gap multiple hetero-junction tunneling junction structure. The wide band gap multiple hetero-junction tunneling junction structure comprises four function layers, wherein the first function layer comprises a first band gap and a first type doping; the second function layer comprises a second band gap and the first type doping, and the second band gap is smaller than the first band gap; the third function layer comprises a third band gap and a second type doping; the fourth function layer comprises a fourth band gap and the second type doping, and the band gap is greater than the third band gap. The utility model solves the problem of the prior art that: the peak current density of the wide band gap tunneling junction is low, and the four function layers form the tunneling junction structure, and multiple hetero-junctions are formed among the function layers, thus the peak tunneling current is increased by the band offset of the pN type or nP type hetero structure, and a carrier is compensated by the injection effect of the carrier of the Pp type or Nn type hetero structure, furthermore the peak tunneling current is increased, and the series resistance is smaller, so as to meet the application requirements of high-powered concentrator solar cells.
Description
Technical field
The utility model relates to a kind of broad-band gap Multiple heterostructures tunnelling node structure, is the tunnelling node structure be used to the high power concentrator GaAs multijunction solar cell that is connected in series a plurality of sub-batteries.
Technical background
The GaAs multijunction solar cell is formed by the sub-battery serial connection of some different band gap, and each sub-battery is the p-n junction structure, if directly be cascaded, then sub-battery contact interface can form anti-inclined to one side p-n junction and causes voltage to be cancelled out each other and non-conductive.Adopting tunnel junctions to connect can address this problem.Tunnel junctions also is the p-n junction structure, be characterized in that functional layer thin thickness and doping content are very high, Fermi level enters respectively valence band and the conduction band in P district and N district, when solar irradiation is arranged, electrical potential difference appears in the tunnel junctions two ends, N district majority carrier-electronics can enter P district valence band from the N district direct tunnelling of conduction band, so generation tunnelling current, reach the effect that connects two sub-batteries, when electrical potential difference constantly increases, when N district charge carrier Fermi level was higher than P district charge carrier Fermi level, charge carrier just can not tunnelling, and the tunnel junctions electric current was called the peak value peak and wore electric current this moment.It is relevant with doping content that electric current is worn at the peak value peak of tunnel junctions, and doping content is higher, and the peak value tunnelling current of tunnel junctions is larger.
In order to reduce tunnel junctions to sun Optical Absorption, the tunnel junctions functional layer requires to adopt wide bandgap material.Yet along with the increase of material band gap, Effective Doping concentration and the charge carrier tunnelling probability of semiconductor layer all can descend, and cause the tunnel junctions peak current density can be exponential form and descend.Traditional tunnel junctions is made of two functional layers, namely only has the second and the 3rd functional layer.Such as N
++GaAs/P
++GaAs, N
++GaAs/P
++The structures such as AlGaAs, its band gap is less, has limited the more application of the sub-battery of broad-band gap, and adopts the AlInP of broad-band gap
2/ GaInP
2Tunnel junctions [Electronics letters 1998 Vol. 34 No. 4], Al
0.2Ga
0.3In
0.5P/Al
0.9Ga
0.1As tunnel junctions [Sharps, P.R. Photovoltaic Specialists Conference, 2000. Conference Record of the Twenty-Eighth IEEE], peak current density all is lower than 2A/cm
2, be difficult to satisfy the application of high concentrating solar battery.
The utility model content
In order to solve the low problem of above-mentioned broad-band gap tunnel junctions peak current density, the purpose of this utility model is to provide a kind of broad-band gap Multiple heterostructures tunnelling node structure, to improve the peak value tunnelling current, satisfies the application of high concentrating solar battery.
In order to reach above-mentioned purpose, solution of the present utility model is:
A kind of broad-band gap Multiple heterostructures tunnelling node structure is comprised of four functional layers; The first functional layer has the first band gap and the first type mixes; The second functional layer has the second band gap and the first type mixes, and band gap is less than the first band gap; The 3rd functional layer has the 3rd band gap and Second-Type mixes; The 4th functional layer has four-tape crack and Second-Type mixes, and band gap is greater than the 3rd band gap.
For being positioned at outer field the first functional layer and the 4th functional layer, its band gap 2.20eV(electron-volt)≤Eg(semiconducting compound energy gap Energy gap)≤2.50eV, constituent is (Al
yGa
1-y)
1-xIn
xP or (Al
yGa
1-y)
1-xIn
xAs, wherein the component of In is 0≤x≤0.85, and the component of Al is 0.50≤y≤1.00, and each constituent content is with molar ratio computing, and film thickness is 20-100 nm, doping content is 5 * 10
18-5 * 10
20Cm
-3
For the second functional layer that is positioned at internal layer and the 3rd functional layer, its band gap 1.80eV≤Eg≤2.20eV, constituent is (Al
yGa
1-y)
1-xIn
xP or (Al
yGa
1-y)
1-xIn
xAs, component 0≤x of In≤0.85 wherein, component 0≤y of Al＜0.50, film thickness is 10-20 nm, doping content is 5 * 10
18-5 * 10
20Cm
-3
After adopting such scheme, the utility model has solved the low problem of prior art broad-band gap tunnel junctions peak current density, adopt four functional layers to form tunnelling node structure, form heterojunction between each functional layer, both can improve the peak value tunnelling current by the band rank of pN type or nP type heterostructure, the injection effect of charge carrier that again can be by Pp type or Nn type heterostructure is realized the charge carrier compensation, further improve peak value tunnelling current and less series resistance, thereby satisfy the application of high concentrating solar battery.
Description of drawings
Fig. 1 is the structural representation of the first embodiment;
Fig. 2 is the structural representation of the second embodiment;
Fig. 3 is the structural representation of the 3rd embodiment;
Fig. 4 is the structural representation behind the bonding of peeling off of the 3rd embodiment.
Embodiment
The first execution mode of the present utility model has the sub-battery 11 of the first band gap, the first functional layer 12, the second functional layer 13, the 3rd functional layer 14, the 4th functional layer 15, the sub-battery 16 of the second band gap and cap layer 17 as shown in Figure 1 successively on substrate 10.Substrate 10 is Ge or GaAs.The sub-battery 11 of the first band gap is homojunction or the heterojunction of PN type by the polarity that one or more materials such as GaAs, GaInAs, GaInNAs, GaInNAsSb, GaInAsP, AlGaAs, AlGaAsP, AlGaInAs, GaInP, AlGaInP consist of.The first functional layer 12 consists of Al component 0.85, doping Si, thickness 20-100nm, doping content 1 * 10 by AlGaInP
19Cm
-3The second functional layer 13 is made of AlGaInP, and the Al component is 0.15, is doped to Si, and thickness is 10-20nm, doping content 5 * 10
19Cm
-3The 3rd functional layer 14 is comprised of AlGaAs, and the Al component is 0.15, is doped to C, and thickness is 10-20nm, doping content 1 * 10
20Cm
-3The 4th functional layer 15 is comprised of AlGaAs, and the Al component is 0.85, is doped to C, and thickness is 20-100nm, doping content 1 * 10
20Cm
-3The sub-battery 16 of the second band gap is homojunction or the heterojunction of PN type by the polarity that one or more materials such as AlGaAs, AlInAs, AlInP, GaInP, GaAsP, AlGaInP consist of.Cap layer 17 is GaAs or GaInAs.Wherein, the second functional layer 13 and the 3rd functional layer 14 form pN type heterojunction, and majority carrier is compounded to form tunnelling current; The first functional layer 12 and the second functional layer 13 form Nn type heterojunction, heterojunction boundary can be by diffuseing to form effective field of force, majority carrier is constantly compensated in the second functional layer 13 by drifting about, and heterojunction can form the band rank and can form potential barrier, effectively stop majority carrier to leak; The 3rd functional layer 14 and the 4th functional layer 15 form pP type heterojunction, heterojunction boundary can be by diffuseing to form effective field of force, majority carrier is constantly compensated in the 3rd functional layer 14 by drifting about, and heterojunction can form the band rank and can form potential barrier, effectively stop majority carrier to leak.Because carrier injection and the anti-leak effect of the first functional layer 12, the 4th functional layer 15, increased the efficient carrier concentration in the second functional layer 13, the 3rd functional layer 14, thereby this tunnelling node structure has higher peak value tunnelling current, adopts the battery of this tunneling structure to work under the sunlight of higher light concentrating times.
The second execution mode of the present utility model has the sub-battery 201 of the first band gap, the first tunnel junctions the first function 202, the first tunnel junctions the second function 203, the first tunnel junctions the 3rd function 204, the first tunnel junctions the 4th function 205, the sub-battery 206 of the second band gap, the second tunnel junctions the first function 207, the second tunnel junctions the second function 208, the second tunnel junctions the 3rd function 209, the second tunnel junctions the 4th function 210, the sub-battery 211 of the 3rd band gap, cap layer 212 as shown in Figure 2 successively on substrate 200.Substrate 200 is Ge.The sub-battery 201 of the first band gap is comprised of the p-n junction of Ge.The first tunnel junctions the first function 202 consists of Al component 0.15, doping Si, thickness 20-100nm, doping content 5 * 10 by AlGaInP
19Cm
-3The first tunnel junctions the second functional layer 203 consists of Al component 0.05, doping Si, thickness 10-20nm, doping content 5 * 10 by AlGaInP
19Cm
-3The first tunnel junctions the 3rd functional layer 204 forms Al component 0.10, doping C, thickness 10-20nm, doping content 1 * 10 by AlGaAs
20Cm
-3The first tunnel junctions the 4th functional layer 205 forms Al component 0.30, doping C, thickness 20-100nm, doping content 1 * 10 by AlGaAs
20Cm
-3The sub-battery 206 of the second band gap is homojunction or the heterojunction of PN type by the polarity that one or more materials such as AlGaAs, AlInAs, AlInP, GaInP, GaAsP, AlGaInP consist of.The second tunnel junctions the first function 207 consists of Al component 0.85, doping Si, thickness 20-100nm, doping content 5 * 10 by AlGaInP
19Cm
-3The second tunnel junctions the second functional layer 208 consists of Al component 0.15, doping Si, thickness 10-20nm, doping content 5 * 10 by AlGaInP
19Cm
-3The second tunnel junctions the 3rd functional layer 209 forms Al component 0.15, doping C, thickness 10-20nm, doping content 1 * 10 by AlGaAs
20Cm
-3The second tunnel junctions the 4th functional layer 210 forms Al component 0.85, doping C, thickness 20-100nm, doping content 1 * 10 by AlGaAs
20Cm
-3The sub-battery 211 of the 3rd band gap is homojunction or the heterojunction of PN type by the polarity that one or more materials such as AlGaAs, AlInAs, AlInP, GaInP, GaAsP, AlGaInP, GaAsSb consist of.Cap layer 212 is GaAs or GaInAs.Wherein, the second functional layer 203 of the first tunnel junctions and the 3rd functional layer 204 form pN type heterojunction, and majority carrier is compounded to form tunnelling current; The first functional layer 202 of the first tunnel junctions and the second functional layer 203 form Nn type heterojunction, heterojunction boundary can be by diffuseing to form effective field of force, make majority carrier constantly compensate in the second functional layer 203 by drifting about, and heterojunction can form the band rank can form potential barrier, effectively stops majority carrier to leak; The 3rd functional layer 204 of the first tunnel junctions and the 4th functional layer 205 form pP type heterojunction, heterojunction boundary can be by diffuseing to form effective field of force, make majority carrier constantly compensate in the 3rd functional layer 204 by drifting about, and heterojunction can form the band rank can form potential barrier, effectively stops majority carrier to leak; Because carrier injection and the anti-leak effect of the first functional layer 202 and the 4th functional layer 205 have increased the efficient carrier concentration in the second functional layer 203 and the 3rd functional layer 204, thereby have increased the peak value tunnelling current of this tunnelling node structure.The second functional layer 208 of the second tunnel junctions and the 3rd functional layer 209 form pN type heterojunction, and majority carrier is compounded to form tunnelling current; The first functional layer 207 of the second tunnel junctions and the second functional layer 208 form Nn type heterojunction, heterojunction boundary can be by diffuseing to form effective field of force, make majority carrier constantly compensate in the second functional layer 208 by drifting about, and heterojunction can form the band rank can form potential barrier, effectively stops majority carrier to leak; The 3rd functional layer 209 of the second tunnel junctions and the 4th functional layer 210 form pP type heterojunction, heterojunction boundary can be by diffuseing to form effective field of force, make majority carrier constantly compensate in the 3rd functional layer 209 by drifting about, and heterojunction can form the band rank can form potential barrier, effectively stops majority carrier to leak; Because carrier injection and the anti-leak effect of the first functional layer 207 and the 4th functional layer 210 functional layers, increase the efficient carrier concentration in the second functional layer 208 and the 3rd functional layer 209 functional layers, thereby increased the peak value tunnelling current of this tunnelling node structure.Three junction batteries are owing to adopted two groups of broad stopband heterojunction tunnelling node structures, and tunnel junctions reduces the absorption loss of sunlight, and the peak value tunnelling current of tunnel junctions is larger, can work under the sunlight of higher light concentrating times.
The third execution mode of the present utility model has the first cap layer 301, the sub-battery 302 of the first band gap, the first tunnel junctions the first functional layer 303, the first tunnel junctions the second functional layer 304, the first tunnel junctions the 3rd functional layer 305, the first tunnel junctions the 4th functional layer 306, the sub-battery 307 of the second band gap, the second tunnel junctions the first functional layer 308, the second tunnel junctions the second functional layer 309, the second tunnel junctions the 3rd functional layer 310, the second tunnel junctions the 4th functional layer 311, the sub-battery 312 of the 3rd band gap, the second cap layer 313 as shown in Figure 3 successively on substrate 300.Substrate 300 is Ge or GaAs, and the first cap layer 301 is GaAs or GaInAs.Homojunction or heterojunction that the sub-battery 302 of the first band gap is made of one or more materials such as AlGaAs, AlInAs, AlInP, GaInP, GaAsP, AlGaInP, GaAsSb.The first tunnel junctions the first functional layer 303 forms Al component 0.85, doping C, thickness 20-100nm, doping content 1 * 10 by AlGaAs
20Cm
-3The first tunnel junctions the second functional layer 304 forms Al component 0.15, doping C, thickness 10-20nm, doping content 1 * 10 by AlGaAs
20Cm
-3The first tunnel junctions the 3rd functional layer 305 consists of Al component 0.30, doping Si, thickness 10-20nm, doping content 5 * 10 by AlGaInP
19Cm
-3The first tunnel junctions the 4th function 306 consists of Al component 0.85, doping Si, thickness 20-100nm, doping content 5 * 10 by AlGaInP
19Cm
-3Homojunction or heterojunction that the sub-battery 307 of the second band gap is made of one or more materials such as AlGaAs, AlInAs, AlInP, GaInP, GaAsP, AlGaInP.The second tunnel junctions the first functional layer 308 forms Al component 0.45, doping C, thickness 20-100nm, doping content 1 * 10 by AlGaAs
20Cm
-3The second tunnel junctions the second functional layer 309 forms Al component 0.05, doping C, thickness 10-20nm, doping content 1 * 10 by AlGaAs
20Cm
-3The second tunnel junctions the 3rd functional layer 310 consists of Al component 0.10, doping Si, thickness 10-20nm, doping content 5 * 10 by AlGaInP
19Cm
-3The second tunnel junctions the 4th functional layer 311 consists of Al component 0.45, doping Si, thickness 20-100nm, doping content 1 * 10 by AlGaInP
20Cm
-3Homojunction or heterojunction that the sub-battery 312 of the 3rd band gap is made of one or more materials such as GaInAs, GaInAsP, GaInNAsP, AlGaInAs.The second cap layer 313 is GaInAs.After epitaxial growth is finished, epitaxial loayer is bonded on the new substrate 314, then the peel-away removal substrate 300.Epitaxial loayer counter-rotating and with new substrate 314 bondings after the new construction that consists of as shown in Figure 4.The second cap layer 313 is arranged on substrate 314 successively, the sub-battery 312 of the 3rd band gap, the second tunnel junctions the 4th functional layer 311, the second tunnel junctions the 3rd functional layer 310, the second tunnel junctions the second functional layer 309, the second tunnel junctions the first functional layer 308, the sub-battery 307 of the second band gap, the first tunnel junctions the 4th functional layer 306, the first tunnel junctions the 3rd functional layer 305, the first tunnel junctions the second functional layer 304, the first tunnel junctions the first functional layer 303, the sub-battery 302 of the first band gap, the first cap layer 301.Owing to adopted two groups of broad stopband Multiple heterostructures tunnelling node structures, tunnel junctions reduces the absorption loss of sunlight, and the peak value tunnelling current of tunnel junctions is larger, can work under the sunlight of higher light concentrating times.
Above embodiment is only for illustration of the utility model, but not to restriction of the present utility model.Those skilled in the art in the situation that does not break away from spirit and scope of the present utility model, can make various conversion or variation.Therefore, all technical schemes that are equal to also should belong to category of the present utility model.
Claims (3)
1. a broad-band gap Multiple heterostructures tunnelling node structure is characterized in that: be comprised of four functional layers; The first functional layer has the first band gap and the first type mixes; The second functional layer has the second band gap and the first type mixes, and band gap is less than the first band gap; The 3rd functional layer has the 3rd band gap and Second-Type mixes; The 4th functional layer has four-tape crack and Second-Type mixes, and band gap is greater than the 3rd band gap.
2. a kind of broad-band gap Multiple heterostructures tunnelling node structure according to claim 1 is characterized in that: be positioned at outer field the first functional layer and the 4th functional layer, its band gap 2.20eV≤Eg≤2.50eV.
3. a kind of broad-band gap Multiple heterostructures tunnelling node structure according to claim 1 is characterized in that: be positioned at the second functional layer and the 3rd functional layer of internal layer, its band gap 1.80eV≤Eg≤2.20eV.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709349A (en) * | 2012-06-21 | 2012-10-03 | 厦门乾照光电股份有限公司 | Wide-band gap multi-heterojunction tunnel junction structure |
| CN111739970A (en) * | 2019-03-22 | 2020-10-02 | 阿聚尔斯佩西太阳能有限责任公司 | Stacked monolithic, positive metamorphic, terrestrial concentrator solar cell |
| CN112582494A (en) * | 2019-09-27 | 2021-03-30 | 阿聚尔斯佩西太阳能有限责任公司 | Monolithic multijunction solar cell with exactly four subcells |
-
2012
- 2012-06-21 CN CN 201220294751 patent/CN202816962U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102709349A (en) * | 2012-06-21 | 2012-10-03 | 厦门乾照光电股份有限公司 | Wide-band gap multi-heterojunction tunnel junction structure |
| CN111739970A (en) * | 2019-03-22 | 2020-10-02 | 阿聚尔斯佩西太阳能有限责任公司 | Stacked monolithic, positive metamorphic, terrestrial concentrator solar cell |
| CN111739970B (en) * | 2019-03-22 | 2024-01-23 | 阿聚尔斯佩西太阳能有限责任公司 | Stacked single-sheet positive-deterioration ground-type concentrating solar cell |
| CN112582494A (en) * | 2019-09-27 | 2021-03-30 | 阿聚尔斯佩西太阳能有限责任公司 | Monolithic multijunction solar cell with exactly four subcells |
| CN112582494B (en) * | 2019-09-27 | 2023-09-12 | 阿聚尔斯佩西太阳能有限责任公司 | Monolithic multi-junction solar cell with exactly four subcells |
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Granted publication date: 20130320 |