CN202795114U - Reference voltage generation circuit - Google Patents
Reference voltage generation circuit Download PDFInfo
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- CN202795114U CN202795114U CN 201220465573 CN201220465573U CN202795114U CN 202795114 U CN202795114 U CN 202795114U CN 201220465573 CN201220465573 CN 201220465573 CN 201220465573 U CN201220465573 U CN 201220465573U CN 202795114 U CN202795114 U CN 202795114U
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- semiconductor
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Abstract
The utility model discloses a reference voltage generation circuit. The gate electrodes of a first MOS (Metal Oxide Semiconductor) transistor (P1), a second MOS transistor (P2) and a third MOS transistor (P3) of the circuit are connected with the output end of an operational amplifier, and the source electrodes of the first, second and third MOS transistors are connected with a power supply voltage (VDD). The drain electrode of the P1 is grounded through a second resistor (R2), the drain electrode of the P2 is grounded through a fourth resistor (R4), and the drain electrode of the P3 is grounded through a fifth resistor (R5). Two input ends of the operational amplifier are respectively connected with the drain electrodes of the P1 and P2. The voltage output end (VOUT) is connected with the drain electrode of the P3. The reference voltage generation circuit provided by the utility model has the beneficial effects that the circuit is simple in structure, the research and development cost and the production cost can be reduced, and the generated reference voltage value is further stable.
Description
Technical field
The utility model relates to a kind of generating circuit from reference voltage.
Background technology
In electronic circuit the inside, generally to set a reference voltage, determine other road voltages with respect to the relative value of reference voltage by reference voltage, with to circuit generation effect.
The reference voltage of prior art is generally larger on circuit structure, and research and development and production cost are higher, and the value of reference voltage is unstable.
The utility model content
Goal of the invention of the present utility model is: for the problem of above-mentioned existence, provide a kind of simple in structure, generating circuit from reference voltage that magnitude of voltage is stable.
The technical solution adopted in the utility model is such: a kind of generating circuit from reference voltage, this circuit comprises: the first metal-oxide-semiconductor of P type, the second metal-oxide-semiconductor, the 3rd metal-oxide-semiconductor, the second resistance, the 4th resistance, the 5th resistance and operational amplifier.Wherein, the grid of described the first metal-oxide-semiconductor, the second metal-oxide-semiconductor and the 3rd metal-oxide-semiconductor all is connected with the output terminal of operational amplifier, and source electrode all is connected with supply voltage; The drain electrode of the first metal-oxide-semiconductor is by the second resistance eutral grounding, and the drain electrode of the second metal-oxide-semiconductor is by the 4th resistance eutral grounding, and the drain electrode of the 3rd metal-oxide-semiconductor is by the 5th resistance eutral grounding; Two input ends of operational amplifier connect respectively the drain electrode of the first metal-oxide-semiconductor and the drain electrode of the second metal-oxide-semiconductor; Voltage output end connects the drain electrode of the 3rd metal-oxide-semiconductor.
In above-mentioned circuit, described the first metal-oxide-semiconductor, the second metal-oxide-semiconductor and the 3rd metal-oxide-semiconductor are the identical metal-oxide-semiconductor of parameter.
In above-mentioned circuit, described the second resistance, the 4th resistance and the 5th resistance are the identical resistance of parameter.
Concrete, also comprise the first resistance, the 3rd resistance, the first diode and the second diode in the generating circuit from reference voltage of the present utility model; The negative pole end ground connection of described the first diode, positive terminal are connected to the drain electrode of the first metal-oxide-semiconductor by the first resistance; The negative pole end ground connection of described the second diode, positive terminal are connected to the drain electrode of the second metal-oxide-semiconductor by the 3rd resistance.As preferably, aforesaid the first resistance is the identical resistance of parameter with the 3rd resistance, and the first diode is the identical diode of parameter with the second diode.
In sum, owing to adopted technique scheme, the beneficial effects of the utility model are: this circuit structure is simple, can reduce research and development and production cost, and the reference voltage level of generation is also stable.
Description of drawings
Fig. 1 is the circuit theory diagrams of the utility model generating circuit from reference voltage.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described in detail.
In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only in order to explaining the utility model, and be not used in restriction the utility model.
As shown in Figure 1, be the circuit theory diagrams of the utility model reference voltage circuit.
A kind of generating circuit from reference voltage, this circuit comprises: the 3rd metal-oxide-semiconductor P3 of the first metal-oxide-semiconductor P1 of P type, the second metal-oxide-semiconductor P2 of P type, P type, the second resistance R 2, the four resistance R 4, the five resistance R 5 and operational amplifiers.In the technical solution of the utility model, the first metal-oxide-semiconductor P1, the second metal-oxide-semiconductor P2 are the identical metal-oxide-semiconductor of parameter (various electrical quantitys and temperature characterisitic etc.) with the 3rd metal-oxide-semiconductor P3; The second resistance R 2, the 4th resistance R 4 and the 5th resistance R 5 are the identical resistance of parameter (resistance value and temperature characterisitic etc.).
The grid of described the first metal-oxide-semiconductor P1, the second metal-oxide-semiconductor P2 and the 3rd metal-oxide-semiconductor P3 all is connected with the output terminal of operational amplifier, and source electrode all is connected with supply voltage VDD; The drain electrode of the first metal-oxide-semiconductor P1 is by the second resistance R 2 ground connection, and the drain electrode of the second metal-oxide-semiconductor P2 is by the 4th resistance R 4 ground connection, and the drain electrode of the 3rd metal-oxide-semiconductor P3 is by the 5th resistance R 5 ground connection; Two input ends of operational amplifier connect respectively the drain electrode of the first metal-oxide-semiconductor P1 and the drain electrode of the second metal-oxide-semiconductor P2; Voltage output end VOUT connects the drain electrode of the 3rd metal-oxide-semiconductor P3.
As preferably, generating circuit from reference voltage of the present utility model also comprises the first resistance R 1, the 3rd resistance R 3, the first diode D1 and the second diode D2; The negative pole end ground connection of described the first diode D1, positive terminal are connected to the drain electrode of the first metal-oxide-semiconductor P1 by the first resistance R 1; The negative pole end ground connection of described the second diode D2, positive terminal are connected to the drain electrode of the second metal-oxide-semiconductor P2 by the 3rd resistance R 3.
Wherein, the first above-mentioned resistance R 1 is the identical resistance of parameter (resistance value and temperature characterisitic etc.) with the 3rd resistance R 3; Described the first diode D1 is the identical diode of parameter with the second diode D2.
The above only is preferred embodiment of the present utility model; not in order to limit the utility model; all any modifications of within spirit of the present utility model and principle, doing, be equal to and replace and improvement etc., all should be included within the protection domain of the present utility model.
Claims (6)
1. a generating circuit from reference voltage is characterized in that, this circuit comprises: first metal-oxide-semiconductor (P1) of P type, the second metal-oxide-semiconductor (P2), the 3rd metal-oxide-semiconductor (P3), the second resistance (R2), the 4th resistance (R4), the 5th resistance (R5) and operational amplifier;
The grid of described the first metal-oxide-semiconductor (P1), the second metal-oxide-semiconductor (P2) and the 3rd metal-oxide-semiconductor (P3) all is connected with the output terminal of operational amplifier, and source electrode all is connected with supply voltage (VDD); The drain electrode of the first metal-oxide-semiconductor (P1) is by the second resistance (R2) ground connection, and the drain electrode of the second metal-oxide-semiconductor (P2) is by the 4th resistance (R4) ground connection, and the drain electrode of the 3rd metal-oxide-semiconductor (P3) is by the 5th resistance (R5) ground connection; Two input ends of operational amplifier connect respectively the drain electrode of the first metal-oxide-semiconductor (P1) and the drain electrode of the second metal-oxide-semiconductor (P2); Voltage output end (VOUT) connects the drain electrode of the 3rd metal-oxide-semiconductor (P3).
2. generating circuit from reference voltage according to claim 1 is characterized in that, the first metal-oxide-semiconductor (P1), the second metal-oxide-semiconductor (P2) and the 3rd metal-oxide-semiconductor (P3) are the identical metal-oxide-semiconductor of parameter.
3. generating circuit from reference voltage according to claim 1 is characterized in that, the second resistance (R2), the 4th resistance (R4) and the 5th resistance (R5) are the identical resistance of parameter.
4. according to claim 1,2 or 3 described generating circuit from reference voltage, it is characterized in that, also comprise the first resistance (R1), the 3rd resistance (R3), the first diode (D1) and the second diode (D2); The negative pole end ground connection of described the first diode (D1), positive terminal are connected to the drain electrode of the first metal-oxide-semiconductor (P1) by the first resistance (R1); The negative pole end ground connection of described the second diode (D2), positive terminal are connected to the drain electrode of the second metal-oxide-semiconductor (P2) by the 3rd resistance (R3).
5. generating circuit from reference voltage according to claim 4 is characterized in that, described the first resistance (R1) is the identical resistance of parameter with the 3rd resistance (R3).
6. generating circuit from reference voltage according to claim 4 is characterized in that, described the first diode (D1) is the identical diode of parameter with the second diode (D2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220465573 CN202795114U (en) | 2012-09-13 | 2012-09-13 | Reference voltage generation circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220465573 CN202795114U (en) | 2012-09-13 | 2012-09-13 | Reference voltage generation circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202795114U true CN202795114U (en) | 2013-03-13 |
Family
ID=47822348
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220465573 Expired - Fee Related CN202795114U (en) | 2012-09-13 | 2012-09-13 | Reference voltage generation circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202795114U (en) |
-
2012
- 2012-09-13 CN CN 201220465573 patent/CN202795114U/en not_active Expired - Fee Related
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130313 Termination date: 20130913 |