CN202278786U - High-transmittance conductive film - Google Patents
High-transmittance conductive film Download PDFInfo
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- CN202278786U CN202278786U CN2011203327712U CN201120332771U CN202278786U CN 202278786 U CN202278786 U CN 202278786U CN 2011203327712 U CN2011203327712 U CN 2011203327712U CN 201120332771 U CN201120332771 U CN 201120332771U CN 202278786 U CN202278786 U CN 202278786U
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- transparent substrate
- conductive film
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- reflection
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Abstract
The utility model relates to a conductive film in particular to a high-transmittance conductive film which is applied to the field of manufacturing of capacitive type touch screens. The high-transmittance conductive film comprises a flexible and transparent substrate, an upper anti-reflection film on the upper surface of the flexible and transparent substrate, an insulating film on the upper surface of the upper anti-reflection film, a transparent conductive film on the upper surface of the insulating film, and a lower anti-reflection film on the lower surface of the flexible and transparent substrate. On basis of the flexible and transparent substrate, the anti-reflection films are plated on the surface of the flexible and transparent substrate by using a magneto-controlled sputter coating technology, wherein the anti-reflection films are arranged on the flexible and transparent substrate according to a sequence of the transmittances from up to down, and the effective optical distance of the each layer is lambda/4; Nb2O5 is a substance with high transmittance of 2.3; and SiO2 is a substance with low transmittance of 1.5.
Description
Technical field
The utility model relates to a kind of conductive film, relates in particular to a kind of high conductive film, is applied to the making field of capacitive touch screen.
Background technology
The present topmost application of nesa coating (TCO) is ITO, also has other AZO etc.Ito thin film is a kind of semiconductor transparent membrane, and it is the abbreviation of tin indium oxide (Indium Tin Oxide) English name.As transparency conductive electrode, the ITO film has the good transparency and electric conductivity.This characteristic of Application of I TO film often is used in it the transparency electrode of display device in the reality.
Up till now, in flexible transparent substrate, promptly PET (PET) is gone up the ITO film plating process has a variety ofly, although method is a lot, purpose is exactly nothing but to improve the transparent and electric conductivity of film.Wherein, the transparency is most important to the quality that shows product, and touch-screen is no exception certainly.But the PET material itself has between certain refractive index n=1.5 ~ 1.6, the words material upper surface that directly contacts and the reflectivity 4.0 ~ 5.3% of lower surface with air, and the light transmittance of PET material itself can only be between 89.4 ~ 92% in other words.Directly plate the ITO film on this basis, because the ITO material has certain absorption property to light, the light transmittance of at present a lot of products does not reach more than 85%, has only the light transmittance of the several production ITO of families films of Japan to be higher than 85%.
In order to obtain higher light transmittance, the method that in practical operation, reduces the thickness of ITO film on the flexible base, board PET of use high transmission rate reduces ITO to absorption of visible light.But the thing followed is, the resistivity of bringing because thickness reduces problem such as diminish.
The method that has is, on finished product, is covered with one deck anti-reflection film (AR film), does the light transmittance that has increased finished product to a certain extent like this, but increased operation, reduced engineering yield and the cost that has increased product.The product that has is the orderly anti-reflection film of plating refractive index height on pet substrate, plates ITO in the above.Do effective PET upper surface that reduced like this to reflection of light, but can't reduce the material lower surface reflection of light.
Summary of the invention
In order to overcome above-mentioned defective, the purpose of the utility model is to provide a kind of structure of high conductive film.
To achieve these goals; The utility model adopts following technical scheme: a kind of high conductive film, it comprises the bottom anti-reflection film of anti-reflection film, the dielectric film above the anti-reflection film of top, the transparent conductive film above the dielectric film and the flexible transparent substrate lower surface of flexible transparent substrate, flexible transparent substrate upper surface.
The thickness of said flexible transparent substrate is 50 ~ 200um.The thickness of said transparent conductive film is 20 ~ 200 nanometers.
The top anti-reflection film, the orderly effective light path of transmitance height is the Nb of λ/4
2O
5, SiO
2Form.Dielectric film is made up of SiON.Nesa coating is made up of by ITO principal component.The bottom anti-reflection film is to be MgF by composition
2Form.
The manufacture craft of the utility model is following with the beneficial effect that is brought:
On the flexible transparent substrate basis, utilize magnetron sputtering technology, above that surface plating transmitance height orderly, every layer of effective light path be the anti-reflection film of λ/4.Nb wherein
2O
5Be the high material of refractive index, its refractive index is 2.3; SiO
2Be the low material of refractive index, its refractive index is 1.5.
Plating SiO
2The basis on, utilize magnetron sputtering technology, being coated with above again and imitating light path is the SiON rete of λ/4, plating thickness is the transparent conductive film (ITO film) of 20 ~ 200 nanometers above it.This is because on the ITO film, carry out etching with acid liquid usually in the touch-screen manufacturing process; And the SiON of etching part is close with the refractive index between the ITO; So reflectivity is equal basically; The effectively problem of discovery etching line after the minimizing etching, and SiON has very high acid-resistant property, prevents that effectively acidic etching liquid from destroying film structure.
On the basis, utilize magnetron sputtering technology in the above, at PET lower surface plating one deck MgF
2The benefit of doing like this is, the PET refractive index is 1.5 ~ 1.6, and air refraction is 1.0, and MgF
2Refractive index be 1.28 to play the cushion between PET and the air, drop to the reflectivity of lower surface about 1.5 ~ 2.0% from 4.0 ~ 5.3%, play the effect of anti-reflection film.
Description of drawings
The structural representation of Fig. 1 the utility model.
The specific embodiment
In order to be described in detail the These characteristics of the utility model patent, advantage and operation principle below in conjunction with the Figure of description and the specific embodiment the utility model is done further explanation, but the scope that the utility model is protected are not limited thereto.
A kind of high conductive film, it comprises anti-reflection film 2, the dielectric film 3 above the top anti-reflection film 2, the transparent conductive film 4 above the dielectric film 3 and the bottom anti-reflection film 5 of flexible transparent substrate 1 lower surface of flexible transparent substrate 1, flexible transparent substrate 1 upper surface.
The thickness of said flexible transparent substrate 1 is 50 ~ 200um.The thickness of said transparent conductive film 4 is 20 ~ 200 nanometers.
Top anti-reflection film 2, the orderly effective light path of transmitance height is the Nb of λ/4
2O
5, SiO
2Form.Dielectric film 3 is made up of SiON.Nesa coating 4 is made up of by ITO principal component.Bottom anti-reflection film 5 is to be MgF by composition
2Form.
Claims (3)
1. high conductive film is characterized in that: it comprises the anti-reflection film (2) of flexible transparent substrate (1), flexible transparent substrate (1) upper surface, the dielectric film (3) above the top anti-reflection film (2), the transparent conductive film (4) above the dielectric film (3) and the bottom anti-reflection film (5) of flexible transparent substrate (1) lower surface.
2. height according to claim 1 passes through conductive film, it is characterized in that: the thickness of said flexible transparent substrate (1) is 50 ~ 200um.
3. height according to claim 1 passes through conductive film, it is characterized in that: the thickness of said transparent conductive film (4) is 20 ~ 200 nanometers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203327712U CN202278786U (en) | 2011-09-06 | 2011-09-06 | High-transmittance conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011203327712U CN202278786U (en) | 2011-09-06 | 2011-09-06 | High-transmittance conductive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202278786U true CN202278786U (en) | 2012-06-20 |
Family
ID=46224966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011203327712U Expired - Fee Related CN202278786U (en) | 2011-09-06 | 2011-09-06 | High-transmittance conductive film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202278786U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103488346A (en) * | 2013-10-10 | 2014-01-01 | 珠海市魅族科技有限公司 | Protective layer for a touch display screen and mobile terminal |
| CN110658947A (en) * | 2019-08-22 | 2020-01-07 | 信利光电股份有限公司 | Integrated black touch screen and manufacturing method thereof |
-
2011
- 2011-09-06 CN CN2011203327712U patent/CN202278786U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103488346A (en) * | 2013-10-10 | 2014-01-01 | 珠海市魅族科技有限公司 | Protective layer for a touch display screen and mobile terminal |
| CN110658947A (en) * | 2019-08-22 | 2020-01-07 | 信利光电股份有限公司 | Integrated black touch screen and manufacturing method thereof |
| CN110658947B (en) * | 2019-08-22 | 2023-04-25 | 信利光电股份有限公司 | Integrated black touch screen and manufacturing method thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120620 Termination date: 20150906 |
|
| EXPY | Termination of patent right or utility model |