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CN202009341U - 高压大功率逆变器模块 - Google Patents

高压大功率逆变器模块 Download PDF

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Publication number
CN202009341U
CN202009341U CN 201120111727 CN201120111727U CN202009341U CN 202009341 U CN202009341 U CN 202009341U CN 201120111727 CN201120111727 CN 201120111727 CN 201120111727 U CN201120111727 U CN 201120111727U CN 202009341 U CN202009341 U CN 202009341U
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Prior art keywords
power mos
welded
power
chips
molybdenum sheet
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Expired - Lifetime
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CN 201120111727
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Inventor
巫江岭
王立伟
潘蕊
李阳
刘悦
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LIAONING LIAOJING ELECTRONIC TECHNOLOGY Co Ltd
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LIAONING LIAOJING ELECTRONIC TECHNOLOGY Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires

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Abstract

一种高压大功率逆变器模块，包括构成逆变器电路的六个内设续流二极管的功率MOS芯片，其特殊之处是：所述的六个功率MOS芯片集成在一个管壳内，所述的管壳长度为26～30mm、宽度为20～26mm，在管壳底座上焊接有金属化陶瓷基板，在金属化陶瓷基板上焊接有钼片及可伐片，所述的功率MOS芯片通过真空烧结焊接在钼片上，各个功率MOS器件之间采用硅铝丝互连。优点是：管壳采用一体化设计，结构紧凑，占用空间小，特别是将功率MOS器件通过真空烧结焊接在钼片上，可实现低的空洞率，降低了芯片到管壳的热阻，提高了可靠性。

Description

高压大功率逆变器模块
技术领域
本实用新型涉及一种半导体混合集成电路器件，尤其涉及一种高压大功率逆变器模块。
背景技术
由于大部分逆变器功率较小，工作电压较低，输出功率较小。因而，无法直接应用于某些工作电压较高，负载较大的环境，因此需要通过多个半导体分立功率器件组合使用来实现。通过半导体分立功率器件组合虽然可以实现高压大功率应用，但是占用空间大，重量重，组装繁琐。尤其是在空间要求小，重量要求轻，可靠性要求高的条件下，用多个半导体分立器件实现逆变器电路具有一定困难。
发明内容
本实用新型要解决的技术问题是提供一种可实现模块化封装、结构紧凑、占用空间小、可降低芯片到管壳的热阻、可靠性高的高压大功率逆变器模块。
本实用新型涉及的高压大功率逆变器模块，包括构成逆变器电路的六个内设续流二极管的功率MOS芯片，其特殊之处是：所述的六个功率MOS芯片集成在一个管壳内，所述的管壳长度为26～30mm、宽度为20～26mm，在管壳底座上焊接有金属化陶瓷基板，在金属化陶瓷基板上焊接有钼片及可伐片，所述的功率MOS芯片通过真空烧结焊接在钼片上，各个功率MOS器件之间采用硅铝丝互连。
本实用新型的优点是：管壳采用一体化设计，结构紧凑，占用空间小，特别是将功率MOS器件通过真空烧结焊接在钼片上，可实现低的空洞率，降低了芯片到管壳的热阻，提高了可靠性。
附图说明
图1是本实用新型的结构示意图；
图2是本实用新型的内部结构图；
图3是本实用新型的逻辑电路图；
图中：管壳1、外引线2、硅铝丝3、功率MOS芯片4、钼片5、可伐片6、金属化陶瓷基板7。
具体实施方式
如图所示，本实用新型包括管壳1、外引线2、金属化陶瓷基板7、钼片5、可伐片6、集成在管壳1内的六个内设续流二极管的功率MOS芯片4，所述的管壳1为矩形，长度为26～30mm、宽度为20～26mm。管壳1和金属化陶瓷基板7通过高温合金焊料进行焊接，钼片5、可伐片6与金属化陶瓷基板7通过高温合金焊料进行焊接，功率MOS芯片4通过软焊料真空烧结焊接在钼片5上，各个功率MOS器件4之间采用硅铝丝3互连，输入输出端通过硅铝丝3连接至外引线2，最后在氮气氛围内进行封装。

Claims (1)

1.一种高压大功率逆变器模块，包括构成逆变器电路的六个内设续流二极管的功率MOS芯片，其特征是：所述的六个功率MOS芯片集成在一个管壳内，所述的管壳长度为26～30mm、宽度为20～26mm，在管壳底座上焊接有金属化陶瓷基板，在金属化陶瓷基板上焊接有钼片及可伐片，所述的功率MOS芯片通过真空烧结焊接在钼片上，各个功率MOS器件之间采用硅铝丝互连。
CN 201120111727 2011-04-15 2011-04-15 高压大功率逆变器模块 Expired - Lifetime CN202009341U (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107068620A (zh) * 2017-06-02 2017-08-18 朝阳无线电元件有限责任公司 一种to金属陶瓷管壳结构

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107068620A (zh) * 2017-06-02 2017-08-18 朝阳无线电元件有限责任公司 一种to金属陶瓷管壳结构
CN107068620B (zh) * 2017-06-02 2019-10-25 朝阳无线电元件有限责任公司 一种to金属陶瓷管壳结构

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Granted publication date: 20111012