CN209515662U - Antenna packages structure - Google Patents
Antenna packages structure Download PDFInfo
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- CN209515662U CN209515662U CN201920433772.2U CN201920433772U CN209515662U CN 209515662 U CN209515662 U CN 209515662U CN 201920433772 U CN201920433772 U CN 201920433772U CN 209515662 U CN209515662 U CN 209515662U
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- connecting column
- metal connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- Details Of Aerials (AREA)
Abstract
The utility model provides a kind of antenna packages structure, encapsulating structure includes: re-wiring layer, metal connecting column, encapsulated layer, first antenna metal layer, transmission medium layer, second antenna metal layer, antenna circuit chip and metal coupling, the utility model forms transmission medium layer between antenna metal layer, the loss between stacked antenna structure can be substantially reduced, reduce the power consumption of encapsulating structure, the distance between antenna metal layer can be rationally set by the thickness of transmission medium layer, the utility model effectively shortens the signal transmission line of element in encapsulating antenna structure by way of three-dimension packaging, the electrical connection properties and antenna performance for making encapsulating antenna are greatly improved, antenna metal connecting column can be formed by the way of plating or chemical plating, obtain the metal connecting column of major diameter, improve the structural strength of metal connecting column, Process deviation is reduced, reduces feeder loss, improves the efficiency and performance of antenna, the loss of stacked antenna structure can be reduced, reduces cost of manufacture.
Description
Technical field
The utility model belongs to field of semiconductor package, more particularly to a kind of encapsulating structure of antenna.
Background technique
Due to the progress of science and technology, various high-tech electronic products are developed to facilitate people's lives, including each
Kind electronic device, such as: notebook computer, mobile phone, tablet computer (PAD).
With universal and people's demand the increase of these high-tech electronic products, in addition to institute in these high-tech products
Outside the various functions of configuration and application increase considerably, wireless telecommunications are increased especially for the mobile demand of cooperation people
Function.Then, people can be installed on any place or be appointed by these high-tech electronics with wireless communication function
When quarter uses these high-tech electronic products.To significantly increase the flexibility that these high-tech electronic products use
With convenience, therefore, people need not be again limited in a fixed region, break the boundary of use scope, so that
The application of these electronic products veritably facilitates people's lives.
In general, existing antenna structure generally includes dipole antenna (Dipole Antenna), unipole antenna
(Monopole Antenna), plate aerial (Patch Antenna), inverted-F antenna (Planar Inverted-F
Antenna), indentation antenna (Meander Line Antenna), inversed l-shaped antenna (Inverted-L Antenna), follow
Loop antenna (Loop Antenna), helical antenna (Spiral Antenna) and spring antenna (Spring Antenna) etc..
Generally, antenna transmission and reception signal need to go to be composed by multiple function wafer modules, and traditional way is will be each
Module chip is assembled on pcb board, and in a manner of two-dimensional surface, the transmission wire size route of this packaged type is long, inefficiency power
Consumption is high, and encapsulation volume is larger, for example, traditional PCB is encapsulated under the transmission of 5G millimeter wave, loss is too big, and antenna is directly made
In the surface of circuit board, this practice can allow antenna to occupy additional board area, and conformability is poor.
Therefore, how a kind of antenna packages structure and packaging method are provided, reduces the area of circuit board shared by antenna, rationally
It arranges encapsulating structure, improves the integration performance and antenna efficiency of antenna packages structure, the power consumption for reducing antenna packages structure is real
Belong to necessary.
Utility model content
In view of the foregoing deficiencies of prior art, the purpose of this utility model is to provide a kind of encapsulating structures of antenna
And packaging method, for solve antenna efficiency in the prior art and performance is lower, transmission signal route is long, arrangement is not reasonable and
The problems such as power consumption is big.
In order to achieve the above objects and other related objects, the utility model provides a kind of encapsulating structure of antenna, the envelope
Assembling structure includes:
Re-wiring layer, the re-wiring layer include the first face and second face opposite with first face；
Metal connecting column is formed on the second face of the re-wiring layer and is electrically connected with the re-wiring layer；
Encapsulated layer, coats the metal connecting column, and the top surface of the encapsulated layer appears the metal connecting column；
First antenna metal layer is formed on the encapsulated layer, the first antenna metal layer and the metal connecting column
Electrical connection；
Transmission medium layer is formed on the encapsulated layer, and the transmission medium layer at least covers the first antenna metal
Layer；
Second antenna metal layer is formed on the transmission medium layer；
Antenna circuit chip, is incorporated into the first face of the re-wiring layer, and the antenna circuit chip passes through described heavy
New route layer and the metal connecting column are electrically connected with the first antenna metal layer；And
Metal coupling is formed in the first face of the re-wiring layer, to realize that the electrical of the re-wiring layer is drawn.
Optionally, the transmission medium layer includes at least the first transport layer and the second transport layer, wherein first transmission
Layer covers the first antenna metal layer and extends over the encapsulated layer around the first antenna metal layer, and described second
Transport layer is located in first transport layer.
Optionally, the re-wiring layer includes at least first medium layer, the first metal wiring layer, second Jie from bottom to top
Matter layer and the second metal wiring layer being electrically connected with first metal wiring layer, wherein first transport layer with it is described
First medium layer, the material of the second dielectric layer are all the same, and second transport layer is identical as the material of the encapsulated layer.
Optionally, the material of the encapsulated layer includes one of polyimides, silica gel and epoxy resin.
Optionally, when the transmission medium layer includes first transport layer, the material of first transport layer includes
The combination of one or more of epoxy resin, silica gel, PI, PBO, BCB, silica, phosphorosilicate glass, fluorine-containing glass；Work as institute
When to state transmission medium layer include second transport layer, the material of second transport layer includes polyimides, silica gel and ring
One of oxygen resin.
Optionally, the antenna circuit chip includes one or both of driving component and passive component, wherein described
Driving component includes one of electric power management circuit, transmit circuit and reception circuit, and the passive component includes resistance, capacitor
And one of inductance.
Optionally, the material of the metal connecting column includes one of Au, Ag, Cu, Al, the diameter of the metal connecting column
To width between 100 microns -1000 microns.
It optionally, further include Underfill layer between the antenna circuit chip and the first face of the re-wiring layer,
The material of the Underfill layer includes composite resin material.
Optionally, the metal coupling includes one of tin solder, silver solder and gold-tin eutectic solder.
The utility model also provides a kind of antenna packages method, the packaging method comprising steps of
Support substrate is provided, forms separating layer in Yu Suoshu support substrate；
In forming re-wiring layer in the separating layer, the re-wiring layer includes first contacted with the separating layer
Face and second face opposite with first face；
Metal connecting column, the metal connecting column and re-wiring layer electricity are formed in second face of re-wiring layer
Connection；
The metal connecting column is encapsulated using encapsulated layer, and the top surface of the encapsulated layer is made to appear the metal connection
Column；
In forming first antenna metal layer on the encapsulated layer, the first antenna metal layer and the metal connecting column are electric
Connection；
In forming transmission medium layer on the encapsulated layer, the transmission medium layer at least covers the first antenna metal
Layer；
In forming the second antenna metal layer on the transmission medium layer；
The support substrate is separated based on the separating layer, exposes the first face of the re-wiring layer；
Antenna circuit chip is provided, the antenna circuit chip is engaged in the first face of the re-wiring layer, so that
The antenna circuit chip is electrically connected by the re-wiring layer and the metal connecting column with the first antenna metal layer
It connects；And
Metal coupling is formed in the first face of the re-wiring layer, to realize that the electrical of the re-wiring layer is drawn.
Optionally, the step of forming the transmission medium layer include:
In forming the first transport layer on the encapsulated layer, first transport layer covers the first antenna metal layer and prolongs
Stretch the encapsulated layer covered around the first antenna metal layer；And
In forming the second transport layer in first transport layer.
Optionally, include: the step of formation re-wiring layer in Yu Suoshu separating layer
First medium layer is formed in the separation layer surface；
The first metal layer is formed in the first medium layer surface using sputtering technology, and the first metal layer is carried out
Etching forms patterned first metal wiring layer；
Second dielectric layer is formed in the patterned first metal line layer surface, and the second dielectric layer is carried out
Etching forms the second dielectric layer with graphical through-hole；
In filling conductive plug in the graphical through-hole, then using sputtering technology in the second medium layer surface shape
It performs etching to form patterned second metal wiring layer at second metal layer, and to the second metal layer；
Wherein, when the transmission medium layer includes first transport layer, first transport layer and described first is situated between
Matter layer, the material of the second dielectric layer are all the same, when the transmission medium layer includes second transport layer, described second
Transport layer is identical as the material of the encapsulated layer.
Optionally, the material of first transport layer includes epoxy resin, silica gel, PI, PBO, BCB, silica, phosphorus silicon glass
The combination of one or more of glass, fluorine-containing glass；The material of second transport layer includes polyimides, silica gel and ring
One of oxygen resin.
Optionally, the support substrate includes glass substrate, metal substrate, semiconductor substrate, polymer substrate and ceramics
One of substrate；The separating layer includes polymeric layer, and the polymeric layer uses spin coating proceeding to be coated on the branch first
Then support group bottom surface makes its curing molding using ultra-violet curing or heat curing process.
Optionally, the separating layer includes photothermal transformation layer, and the mode of the support substrate is separated based on the separating layer
Including using photothermal transformation layer described in laser irradiation, so that the photothermal transformation layer and the re-wiring layer and the branch support group
Bottom separation, and then separate the support substrate.
It optionally, include compression forming, Transfer molding, liquid using the method that encapsulated layer encapsulates the metal connecting column
One of envelope molding, vacuum lamination and spin coating, the material of the encapsulated layer includes in polyimides, silica gel and epoxy resin
It is a kind of；The metal coupling includes one of tin solder, silver solder and gold-tin eutectic solder.
Optionally, the metal connecting column, the material of the metal connecting column are made using the method for plating or chemical plating
Including one of Au, Ag, Cu, Al, the radial width of the metal connecting column is between 100 microns -1000 microns.
Optionally, the antenna circuit chip includes one or both of driving component and passive component, wherein described
Driving component includes one of electric power management circuit, transmit circuit and reception circuit, and the passive component includes resistance, capacitor
And one of inductance.
As described above, the encapsulating structure of the antenna of the utility model, forms transmission medium between two layers of antenna metal layer
Layer reduces the power consumption of encapsulating structure, and can be situated between by transmission so as to substantially reduce the loss between stacked antenna structure
The distance between antenna metal layer is rationally arranged in the thickness of matter layer, improves antenna performance, and the utility model passes through three-dimension packaging
Mode effectively shortens the signal transmission line of element in encapsulating antenna structure, makes the electrical connection properties and antenna effect of encapsulating antenna
It can be greatly improved, so that the power consumption of encapsulating antenna and the decaying of electromagnetic wave are reduced, the antenna packages knot of the utility model
Structure can form antenna metal connecting column by the way of plating or chemical plating, can obtain the metal connecting column of major diameter, mention
The structural strength of high metal connecting column reduces process deviation, while can reduce feeder loss, improves the efficiency and property of antenna
Can, stacked antenna structure has certain loss, and the utility model uses and is relatively large in diameter, lower metal connecting column is lost,
The loss of stacked antenna structure can be substantially reduced, manufacturing process difficulty can be reduced, to reduce cost of manufacture, improves antenna
Producing efficiency.
Detailed description of the invention
Fig. 1 is shown as the flow diagram of the antenna packages method of the utility model.
Fig. 2-15 is shown as the structural schematic diagram that each step of packaging method of the antenna of the utility model is presented, wherein
Figure 15 is also illustrated as the structural schematic diagram of the antenna packages structure of the utility model.
Component label instructions
101 support substrates
102 separating layers
200 re-wiring layers
201 first medium layers
202 first metal wiring layers
203 second dielectric layer
204 second metal wiring layers
301 seed layers
302 metal connecting columns
303 encapsulated layers
304 first antenna metal layers
305 transmission medium layers
306 first transport layers
307 second transport layers
308 second antenna metal layers
309 re-wiring layers opening
401 antenna circuit chips
402 Underfill layers
501 metal couplings
Specific embodiment
Illustrate the embodiments of the present invention below by way of specific specific example, those skilled in the art can be by this theory
Content disclosed by bright book understands other advantages and effect of the utility model easily.The utility model can also be by addition
Different specific embodiments are embodied or practiced, and the various details in this specification can also be based on different viewpoints and answer
With carrying out various modifications or alterations under the spirit without departing from the utility model.
Please refer to Fig. 1-15.It should be noted that diagram provided in the present embodiment only illustrates this reality in a schematic way
With novel basic conception, only shown in diagram then with related component in the utility model rather than group when according to actual implementation
Number of packages mesh, shape and size are drawn, when actual implementation kenel, quantity and the ratio of each component can arbitrarily change for one kind,
And its assembly layout kenel may also be increasingly complex.
As shown in figure 15, and referring to Fig. 1-14, the utility model provides a kind of antenna packages structure, the antenna packages knot
Structure includes:
Re-wiring layer 200, the re-wiring layer 200 include the first face and opposite with first face second
Face；
Metal connecting column 302 is formed on the second face of the re-wiring layer 200 and is electrically connected with the re-wiring layer
It connects；
Encapsulated layer 303, coats the metal connecting column 302, and the top surface of the encapsulated layer appears the metal connecting column
302；
First antenna metal layer 304 is formed on the encapsulated layer 303, the first antenna metal layer 304 and the gold
Belong to connecting column 302 to be electrically connected；
Transmission medium layer 305 is formed on the encapsulated layer 303, and the transmission medium layer 305 at least covers described first
Antenna metal layer 304；
Second antenna metal layer 308 is formed on the transmission medium layer 305；
Antenna circuit chip 401, is incorporated into the first face of the re-wiring layer 202, and the antenna circuit chip 401 is logical
It crosses the re-wiring layer 200 and the metal connecting column 302 is electrically connected with the first antenna metal layer 304；And
Metal coupling 501 is formed in 200 first face of re-wiring layer, to realize the electrical property of the re-wiring layer
It draws.
Specifically, the utility model provides a kind of antenna packages structure, in the upper rectangular of the first antenna metal layer 304
At a transmission medium layer 305, by the transmission medium layer 305 may be implemented with top antenna metal layer, as being subsequently formed
Second antenna metal layer 308, is coupled, wherein minimum, the transmission medium layer 305 is lost in air transmission medium for antenna
Aerial loss can be reduced, furthermore it is possible to easily control the first antenna gold by the setting of the transmission medium layer 305
Belong to the distance between layer 304 and the second antenna metal layer 308, the distance of the two can such as be done it is small, to meet practical need
It asks.
Specifically, in one example, can also be the formation metal connecting column on the first antenna metal layer 304, adopting
With encapsulated layer package metals connecting column, encapsulated layer is thinned, so that the top surface of metal connecting column is exposed to encapsulated layer；It is sealed in this layer
It fills and forms other antenna metal layers on layer, this layer of antenna metal layer is electrically connected with metal connecting column, further, can also weigh
Multiple above-mentioned steps, form multiple layer metal connecting column, encapsulated layer and antenna metal layer, to form the antenna structure of multiple-level stack,
For example, the duplicate number is not less than the antenna structure layer that twice, can obtain multilayered structure, stacked antenna structure is had
Certain loss preferably can substantially reduce stacked antenna structure using being relatively large in diameter, lower multiple layer metal connecting column being lost
Loss.At this point, the transmission medium layer is formed in the antenna metal layer and second antenna being subsequently formed gold of top layer
Belong between layer.
As an example, the transmission medium layer 305 includes at least the first transmitting layer 3 06 and the second transmitting layer 3 07, wherein
First transmitting layer 3 06 covers the first antenna metal layer 304 and extends over around the first antenna metal layer 304
The encapsulated layer 303, second transmitting layer 3 07 is located on first transmitting layer 3 06.
As an example, the material of first transmitting layer 3 06 include epoxy resin, silica gel, PI, PBO, BCB, silica,
The combination of one or more of phosphorosilicate glass, fluorine-containing glass；
As an example, the material of second transmitting layer 3 07 includes one in polyimides, silica gel and epoxy resin
Kind.
In a preferable example, the aobvious pool of first transmitting layer 3 06 is PI, can further be conducive to increase the encapsulation
Adhesiveness between layer and second transport layer.
Specifically, in one example, the transmission medium layer 305 includes that first transmitting layer 3 06 and described second pass
Defeated layer 307 in other examples, can also be arranged alternately first described in multilayer on the second transmission medium layer 307 certainly
Transport layer and second transport layer, to form the transmission medium layer of laminated construction.
As an example, the re-wiring layer 200 include stacked first medium layer 201, the first metal wiring layer 202,
Second dielectric layer 203 and the second metal wiring layer 204 with graphical through-hole, wherein the material of the first medium layer 201
Material includes epoxy resin, silica gel, PI, PBO, BCB, silica, phosphorosilicate glass, one or more of fluorine-containing glass group
Close, it is preferable that the material selection of the first medium layer 201 be PI (polyimides), with further decrease technology difficulty and
Process costs.The material of first metal wiring layer 202 includes one or more of copper, aluminium, nickel, gold, silver, titanium group
It closes.The material of the second dielectric layer 203 includes epoxy resin, silica gel, PI, PBO, BCB, silica, phosphorosilicate glass, fluorine-containing glass
The combination of one or more of glass, it is preferable that the material selection of the second dielectric layer 203 is PI (polyimides), with
Further decrease technology difficulty and process costs.The material of second metal wiring layer 204 include copper, aluminium, nickel, gold, silver,
The combination of one or more of titanium.
In addition, in other examples, can also be and re-form multilayer second medium on second metal wiring layer 204
Layer 203 and the second metal wiring layer of multilayer 204, to form the re-wiring layer 200 with multilayer lamination structure, to realize difference
Wiring function, the number of plies can be according to actually being selected, such as 5 layers.
As an example, the re-wiring layer 200 includes at least the first medium layer 201, described first from bottom to top
Metal wiring layer 202, the second dielectric layer 203 and second gold medal being electrically connected with first metal wiring layer 201
When belonging to wiring layer 204, first transmitting layer 3 06 and the first medium layer 201, the material of the second dielectric layer 203 are equal
Identical, second transmitting layer 3 07 is identical as the material of the encapsulated layer 303, to improve the stability of device.
As an example, the material of the metal connecting column 302 includes one of Au, Ag, Cu, Al.
As an example, the radial width of the metal connecting column 302 is between 100-1000 microns
As an example, it is shown in Figure 5, it is also formed between the metal connection column 301 and the re-wiring layer 200
One layer of seed layer 301, specifically, the material of the seed layer 301 includes one of Ti, TiN, Ta, TaN, the metal connects
The material for connecing column 302 includes one of Au, Ag, Cu, Al.For example, the seed layer 301 can be Ti, the metal connection
Column 302 can be selected as Cu, and the seed layer 301 can effectively improve the plating of metal connecting column 302 or the efficiency of chemical plating
And performance, while can effectively reinforce the bond strength of metal connecting column 302 Yu the re-wiring layer.
In one example, the radial width of the metal connecting column 302 is between 100 microns -1000 microns, for example,
For the cylindrical metal connecting column, the radial width refers to the diameter of its circular cross-section, for example, the metal connects
The radial width of column 302 can be 200 microns, 500 microns, 800 microns etc., it is preferable that by the way of plating or chemical plating
Antenna metal connecting column 302 is formed, the metal connecting column 302 of major diameter can be obtained, the structure for improving metal connecting column 302 is strong
Degree reduces process deviation, while can reduce feeder loss, improves the efficiency and performance of antenna.
As an example, the material of the encapsulated layer 303 includes one of polyimides, silica gel and epoxy resin.
As an example, the metal coupling 501 includes one of tin solder, silver solder and gold-tin eutectic solder.Wherein,
The metal coupling and arrangement of the antenna circuit chip in first face of re-wiring layer can be according to actual sets.
In one example, the antenna circuit chip 401 includes one or both of driving component and passive component,
Described in driving component include electric power management circuit, transmit circuit and receive one of circuit, the passive component includes electricity
One of resistance, capacitor and inductance.In one example, the antenna circuit chip 401 can be one either two or two
More than a, when the antenna circuit chip 401 is two or more, it can be only driving component, be also possible to
Only passive component can also be that two kinds of components have, encapsulation while so as to realize driving component and passive component.
As an example, further including bottom between the antenna circuit chip 401 and the first face of the re-wiring layer 200
Filled layer 402 to improve the binding performance between the antenna circuit chip 401 and the re-wiring layer 200, and protects institute
Re-wiring layer is stated, improves device stability, in one example, the material of the Underfill layer 402 includes compound resin material
Material.
As shown in figures 1-15, the present embodiment provides a kind of packaging methods of antenna, it is preferable that the day of the utility model
Wire encapsulation construction is prepared using the antenna packages method provided in this embodiment, wherein the packaging method includes:
Firstly, shown in S1 and Fig. 2 as shown in figure 1, support substrate 101 is provided, and in being formed in the support substrate 101 point
Absciss layer 102.
As an example, the support substrate 101 include glass substrate, metal substrate, semiconductor substrate, polymer substrate and
One of ceramic substrate.In the present embodiment, it is glass substrate, the glass substrate cost that the support substrate 101, which is selected,
It is lower, it is easy to be formed on its surface separating layer 102, and the difficulty of subsequent stripping technology can be reduced.
As an example, the separating layer 102 includes polymeric layer, the polymeric layer is coated on using spin coating proceeding first
Then 101 surface of support substrate makes its curing molding using ultra-violet curing or heat curing process.
In one example, the separating layer 102 includes photothermal transformation layer (LTHC), and the polymeric layer includes LTHC photo-thermal
Conversion layer after being formed in the support substrate 101 by spin coating proceeding, makes its curing molding by curing process.Photo-thermal turns
It changes layer (LTHC) performance to stablize, surface is more smooth, is conducive to the production of subsequent re-wiring layer, also, in subsequent removing
In technique, the difficulty of removing is lower.Wherein, subsequent when removing the support substrate 101, it can be based on laser to LTHC photo-thermal
Conversion layer is irradiated, so that the re-wiring layer 200 that is subsequently formed and the support substrate 101 are from the LTHC photothermal conversion
It is separated from each other at layer, exposes the first face of the re-wiring layer.
Then, shown in S2 and Fig. 3 as shown in figure 1, in Yu Suoshu separating layer 102 formed re-wiring layer 200, it is described again
The first face and second face opposite with first face that wiring layer 200 includes and the separating layer 102 connects.
In one example, shown in Figure 3, make the re-wiring layer comprising steps of
It is possible, firstly, to using chemical vapor deposition process or physical gas-phase deposition in the 102 surface shape of separating layer
At first medium layer 201, the material of the first medium layer 201 includes epoxy resin, silica gel, PI, PBO, BCB, silica, phosphorus
Silica glass, the combination of one or more of fluorine-containing glass.It is first used on 102 surface of separating layer specifically, can be
Physical gas-phase deposition or chemical vapor deposition process form first medium material layer, and to the first medium material layer into
Row is graphical, to form the first medium layer 201.
Preferably, the material selection of the first medium layer 201 is PI (polyimides), to further decrease technology difficulty
And process costs.
Then, the first metal layer can be formed in 201 surface of first medium layer using sputtering technology, and to the gold
Belong to layer to perform etching to form patterned first metal wiring layer 202.The material of first metal wiring layer 202 include copper,
The combination of one or more of aluminium, nickel, gold, silver, titanium.Certainly, in other examples, it can also be heavy using physical vapor
Product technique, chemical vapor deposition process, evaporation process, electroplating technology or chemical plating process form the first metal layer.
It then, can be using chemical vapor deposition process or physical gas-phase deposition in patterned first metal
202 surface of wiring layer forms second dielectric layer 203, and performs etching to be formed to have to the second dielectric layer 203 and graphically lead to
The second dielectric layer 203 in hole.The material of the second dielectric layer 203 include epoxy resin, silica gel, PI, PBO, BCB, silica,
Phosphorosilicate glass, the combination of one or more of fluorine-containing glass.Specifically, can be first in 202 table of the first metal wiring layer
Face forms second medium material layer using physical gas-phase deposition or chemical vapor deposition process, and to the second medium material
The bed of material is patterned, to form the second dielectric layer 203.
Preferably, the material selection of the second dielectric layer 203 is PI (polyimides), to further decrease technology difficulty
And process costs.
Continue, in filling conductive plug in the graphical through-hole, then using sputtering technology in the second dielectric layer
203 surfaces form second metal layer, and perform etching to form patterned second metal wiring layer 204 to the metal layer.Institute
The material for stating the second metal wiring layer 204 includes the combination of one or more of copper, aluminium, nickel, gold, silver, titanium.Certainly, exist
In other examples, can also be using physical gas-phase deposition, chemical vapor deposition process, evaporation process, electroplating technology or
Chemical plating process forms second metal layer.
In addition, in other examples, above-mentioned steps third step and the 4th step can be repeated, there is multilayer heap to be formed
The re-wiring layer of stack structure, to realize different wiring functions.The number of plies can be according to actually being selected, and such as 5 layers.
Shown in S3 and Fig. 4-5 as shown in figure 1, the second face of Yu Suoshu re-wiring layer 200 forms metal connecting column 302,
The metal connecting column 302 is electrically connected with the re-wiring layer 200；
In one example, the metal connecting column 302 is made using the method for plating or chemical plating.
As an example, the material of the metal connecting column 302 includes one of Au, Ag, Cu, Al.
As an example, the radial width of the metal connecting column 302 is between 100-1000 microns.
Specifically, the metal connecting column 302 can be formed using routing (Wire Bonding) technique, in another example
In, patterned seed layer 301 is formed on the second face of Yu Suoshu re-wiring layer 200, as shown in figure 5, using plating or changing
The method of plating is learned in formation metal connecting column 302 in the seed layer 301, the metal connecting column 302 and the rewiring
Layer 200 is electrically connected.
Wherein, the radial width of the metal connecting column 302 is between 100 microns -1000 microns, for example, the gold
The radial width for belonging to connecting column 302 can be 200 microns, 500 microns, 800 microns etc., it is preferable that using plating or chemical plating
Mode form antenna metal connecting column 302, can obtain the metal connecting column 302 of major diameter, improve metal connecting column 302
Structural strength reduces process deviation, while can reduce feeder loss, improves the efficiency and performance of antenna.
Specifically, the material of the seed layer 301 includes one of Ti, TiN, Ta, TaN, the metal connecting column 302
Material include one of Au, Ag, Cu, Al.For example, the seed layer 301 can be Ti, the metal connecting column 302 can
To select as Cu, the seed layer 301 can effectively improve the plating of metal connecting column 302 or the efficiency of chemical plating and performance,
The bond strength of metal connecting column 302 Yu the re-wiring layer can effectively be reinforced simultaneously.
Then, shown in S4 and Fig. 6-7 as shown in figure 1, the metal connecting column 302 is encapsulated using encapsulated layer 303, and make
The top surface of the encapsulated layer 303 appears the metal connecting column 302, connects for example, can encapsulate the metal using encapsulated layer 303
Column 302 is connect, as shown in fig. 6, the encapsulated layer 303 is formed in the re-wiring layer around the metal connecting column 302
200 surface surrounds the metal connecting column 302 and covers the re-wiring layer 200 of route, then the encapsulated layer is thinned
303, as shown in fig. 7, the top surface of the metal connecting column 302 is made to be exposed to the encapsulated layer 303.
As an example, using the method that encapsulated layer 303 encapsulates the antenna structure include compression forming, transfer modling at
One of type, fluid-tight molding, vacuum lamination and spin coating.
As an example, the material of the encapsulated layer 303 includes one of polyimides, silica gel and epoxy resin.
Then, shown in S5 and Fig. 8 as shown in figure 1, first antenna metal layer 304 is formed on Yu Suoshu encapsulated layer 303, it is described
First antenna metal layer 304 is electrically connected with the metal connecting column 302.
Specifically, the first antenna first can be formed in 303 surface of encapsulated layer using the methods of vapor deposition or sputtering
Then metal material layer forms the first antenna metal layer 304 of required figure using etching technics.It is of course also possible to use golden
Belong to stripping technology and form the first antenna metal layer 304, forms photoetching offset plate figure prior to 303 surface of encapsulated layer, then
Using the methods of vapor deposition or sputtering in forming first antenna metal material layer on the photoetching offset plate figure, the photoetching is finally removed
Glue pattern removes the first antenna metal material layer on the photoetching offset plate figure simultaneously, retains institute on 303 surface of encapsulated layer
Need the first antenna metal layer 304 of figure.In addition, further including the step to form stacked antenna structure in an optional example
Suddenly, it is included in formation metal connecting column on the first antenna metal layer 304, using encapsulated layer package metals connecting column, is thinned
Encapsulated layer, so that the top surface of metal connecting column is exposed to this layer of encapsulated layer；In being formed on this layer of encapsulated layer, other antennas are golden
Belong to layer, this layer of antenna metal layer is electrically connected with corresponding metal connecting column, further, can also repeat the above steps, and is formed
Multiple layer metal connecting column, encapsulated layer and antenna metal layer, to form the antenna structure of multiple-level stack, for example, described duplicate
Number is not less than the antenna structure layer that twice, can obtain multilayered structure, and stacked antenna structure has certain loss, preferably
Ground can substantially reduce the loss of stacked antenna structure using being relatively large in diameter, lower multiple layer metal connecting column being lost.
Then shown in S6 and Fig. 9 and 10, as shown in figure 1, transmission medium layer 305 is formed on Yu Suoshu encapsulated layer 303, it is described
Transmission medium layer 305 at least covers the first antenna metal layer 304.
As an example, the step of forming transmission medium layer 305 includes:
In forming the first transmitting layer 3 06 on the encapsulated layer 303, first transmitting layer 3 06 covers the first antenna
Metal layer 304 simultaneously extends over the encapsulated layer 303 around the first antenna metal layer 304；And
In forming the second transmitting layer 3 07 on first transmitting layer 3 06.
As an example, the material of first transmitting layer 3 06 include epoxy resin, silica gel, PI, PBO, BCB, silica,
The combination of one or more of phosphorosilicate glass, fluorine-containing glass.
As an example, the material of second transmitting layer 3 07 includes one in polyimides, silica gel and epoxy resin
Kind.
Specifically, the utility model forms a transmission medium layer 305 in the top of the first antenna metal layer 304, lead to
Crossing the transmission medium layer 305 may be implemented with top antenna metal layer, the second antenna metal layer 308 being such as subsequently formed, into
Row coupling, wherein minimum is lost in air transmission medium in antenna, and transmission medium layer 305 can reduce aerial loss, in addition, can
The first antenna metal layer 304 and the second antenna gold are easily controlled with the setting by the transmission medium layer 305
Belong to the distance between layer 308, the distance of the two can such as be done it is small, to meet actual demand.
In addition, in one example, the material of first transmitting layer 3 06 include epoxy resin, silica gel, PI, PBO, BCB,
The combination of one or more of silica, phosphorosilicate glass, fluorine-containing glass, can use chemical vapor deposition process or physics
Gas-phase deposition is in forming first transmitting layer 3 06 on the first antenna metal layer and on surrounding encapsulated layer, separately
Outside, the material of second transmitting layer 3 07 includes one of polyimides, silica gel and epoxy resin, can use compression
One of molding, Transfer molding, fluid-tight molding, vacuum lamination and spin coating form second transmitting layer 3 07.It is excellent one
It selects in example, the aobvious pool of first transmitting layer 3 06 is PI, can further be conducive to increase the encapsulated layer and second biography
Adhesiveness between defeated layer.
As an example, when the re-wiring layer 200 includes first medium layer 201, the first metal wiring layer 202, second
When dielectric layer 203 and the second metal wiring layer 204, and the transmission medium layer 305 include first transmitting layer 3 06 when,
First transmitting layer 3 06 and the first medium layer 201, the material of the second dielectric layer 203 are all the same；The transmission is situated between
When matter layer 305 includes second transmitting layer 3 07, second transmitting layer 3 07 is identical as the material of the encapsulated layer 303.From
And it can be further improved the stability of device architecture.
Then, shown in S7 and Figure 11 as shown in figure 1, the second antenna metal layer is formed on Yu Suoshu transmission medium layer 305
308。
Specifically, described second first can be formed in 305 surface of transmission medium layer using the methods of vapor deposition or sputtering
Then antenna metal material layer forms the second antenna metal layer 308 of required figure using etching technics.It is of course also possible to adopt
The second antenna metal layer 308 is formed with metal lift-off material, forms photoresist figure prior to 305 surface of transmission medium layer
Then shape is finally removed using the methods of vapor deposition or sputtering in forming the second antenna metal material layer on the photoetching offset plate figure
The photoetching offset plate figure removes the second antenna metal material layer on the photoetching offset plate figure simultaneously, in the transmission medium layer
The second antenna metal layer 308 of figure needed for 305 surfaces retain.
Continue, shown in S8 and Figure 12 as shown in figure 1, the support substrate 101 is separated based on the separating layer 102, exposes
First face of the re-wiring layer 200.
Specifically, the separating layer 102 includes photothermal transformation layer, uses photothermal transformation layer described in laser irradiation herein, with
It separates the photothermal transformation layer with the re-wiring layer 200 and the support substrate 101, and then removes the support substrate
101。
Continue, shown in S9 and Figure 13-14 as shown in figure 1, an antenna circuit chip 401 is provided, by the antenna circuit core
Piece 401 is engaged in the first face of the re-wiring layer 200, so that the antenna circuit chip 401 passes through the rewiring
Layer 200 and the metal connecting column 302 and the first antenna metal layer 304 are electrically connected.
Specifically, in one example, the first of the re-wiring layer 200 now can be by way of laser irradiation
Several re-wiring layers opening 309 is formed on face, as shown in figure 13, the re-wiring layer opening 309 can be formed in
In the first medium layer, to expose second metal wiring layer, so as to realize subsequent electrical connection, optional show one
In example, the antenna circuit chip 401 can be engaged in by the re-wiring layer 200 by welding procedure or plant ball technique
First face, so that the antenna circuit chip 401 and the re-wiring layer 200 are electrically connected.
In one example, the antenna circuit chip 401 includes one or both of driving component and passive component,
In, the driving component includes one of electric power management circuit, transmit circuit and reception circuit, and the passive component includes electricity
One of resistance, capacitor and inductance.In one example, the antenna circuit chip 401 can be one either two or two
More than a, when the antenna circuit chip 401 is two or more, it can be only driving component, be also possible to
Only passive component can also be that two kinds of components have, encapsulation while so as to realize driving component and passive component.
Specifically, further including between the antenna circuit chip 401 and the re-wiring layer 200 in one example
Formed Underfill layer 402 the step of, the Underfill layer 402 can be improved the antenna circuit chip 401 with it is described heavy
Binding performance between new route layer 200, and protect the re-wiring layer improves device stability, in one example, can be with
It is to form the Underfill layer 402 by modes such as dispensings after forming the antenna circuit chip 401.In addition, one
In example, the material of the Underfill layer 402 includes composite resin material.
Finally, the first face of Yu Suoshu re-wiring layer 200 forms metal coupling shown in S10 and Figure 15 as shown in figure 1
501, to realize that the electrical of the re-wiring layer 200 is drawn.As an example, the metal coupling 501 includes tin solder, silver soldering
One of material and gold-tin eutectic solder, furthermore it is possible to the metal coupling is formed by welding procedure or plant ball technique, it is described
Metal coupling and arrangement of the antenna circuit chip in first face of re-wiring layer can be according to actual sets.
In conclusion the encapsulating structure of the antenna of the utility model, forms transmission medium between two layers of antenna metal layer
Layer reduces the power consumption of encapsulating structure, and can be situated between by transmission so as to substantially reduce the loss between stacked antenna structure
The distance between antenna metal layer is rationally arranged in the thickness of matter layer, improves antenna performance, and the utility model passes through three-dimension packaging
Mode effectively shortens the signal transmission line of element in encapsulating antenna structure, makes the electrical connection properties and antenna effect of encapsulating antenna
It can be greatly improved, so that the power consumption of encapsulating antenna and the decaying of electromagnetic wave are reduced, the antenna packages knot of the utility model
Structure can form antenna metal connecting column by the way of plating or chemical plating, can obtain the metal connecting column of major diameter, mention
The structural strength of high metal connecting column reduces process deviation, while can reduce feeder loss, improves the efficiency and property of antenna
Can, stacked antenna structure has certain loss, and the utility model uses and is relatively large in diameter, lower metal connecting column is lost,
The loss of stacked antenna structure can be substantially reduced, manufacturing process difficulty can be reduced, to reduce cost of manufacture, improves antenna
Producing efficiency.So the utility model effectively overcomes various shortcoming in the prior art and has high industrial utilization value.
The above embodiments are only illustrative of the principle and efficacy of the utility model, and not for limitation, this is practical new
Type.Any person skilled in the art can all carry out above-described embodiment under the spirit and scope without prejudice to the utility model
Modifications and changes.Therefore, such as those of ordinary skill in the art without departing from the revealed essence of the utility model
All equivalent modifications or change completed under mind and technical idea, should be covered by the claim of the utility model.
Claims (9)
1. a kind of antenna packages structure, which is characterized in that the encapsulating structure includes:
Re-wiring layer, the re-wiring layer include the first face and second face opposite with first face；
Metal connecting column is formed on the second face of the re-wiring layer and is electrically connected with the re-wiring layer；
Encapsulated layer, coats the metal connecting column, and the top surface of the encapsulated layer appears the metal connecting column；
First antenna metal layer is formed on the encapsulated layer, and the first antenna metal layer is electrically connected with the metal connecting column
It connects；
Transmission medium layer is formed on the encapsulated layer, and the transmission medium layer at least covers the first antenna metal layer；
Second antenna metal layer is formed on the transmission medium layer；
Antenna circuit chip, is incorporated into the first face of the re-wiring layer, and the antenna circuit chip passes through the cloth again
Line layer and the metal connecting column are electrically connected with the first antenna metal layer；And
Metal coupling is formed in the first face of the re-wiring layer, to realize that the electrical of the re-wiring layer is drawn.
2. antenna packages structure according to claim 1, it is characterised in that: the transmission medium layer includes at least first and passes
Defeated layer and the second transport layer, wherein first transport layer covers the first antenna metal layer and extends over described first
The encapsulated layer around antenna metal layer, second transport layer are located in first transport layer.
3. antenna packages structure according to claim 2, it is characterised in that: the re-wiring layer at least wraps from bottom to top
Include first medium layer, the first metal wiring layer, second dielectric layer and the second gold medal being electrically connected with first metal wiring layer
Belong to wiring layer, wherein the material of first transport layer, the first medium layer and the second dielectric layer is all the same, institute
It is identical as the material of the encapsulated layer to state the second transport layer.
4. antenna packages structure according to claim 2 or 3, it is characterised in that: when the transmission medium layer includes described
When the first transport layer, the material of first transport layer includes epoxy resin, silica gel, PI, PBO, BCB, silica, phosphorus silicon glass
The combination of one or more of glass, fluorine-containing glass；When the transmission medium layer includes second transport layer, described
The material of two transport layers includes one of polyimides, silica gel and epoxy resin.
5. antenna packages structure described in claim 1, it is characterised in that: the antenna circuit chip include driving component and by
One or both of dynamic component, wherein the driving component includes electric power management circuit, transmit circuit and receives in circuit
One kind, the passive component include one of resistance, capacitor and inductance.
6. antenna packages structure according to claim 1, it is characterised in that: the material of the metal connecting column include Au,
One of Ag, Cu, Al, the radial width of the metal connecting column is between 100 microns -1000 microns.
7. antenna packages structure according to claim 1, it is characterised in that: the antenna circuit chip and the cloth again
It further include Underfill layer between first face of line layer, the material of the Underfill layer includes composite resin material.
8. antenna packages structure according to claim 1, it is characterised in that: the material of the encapsulated layer includes polyamides Asia
One of amine, silica gel and epoxy resin.
9. antenna packages structure according to claim 1, it is characterised in that: the metal coupling includes tin solder, silver soldering
One of material and gold-tin eutectic solder.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920433772.2U CN209515662U (en) | 2019-04-02 | 2019-04-02 | Antenna packages structure |
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|---|---|---|---|
| CN201920433772.2U CN209515662U (en) | 2019-04-02 | 2019-04-02 | Antenna packages structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109860156A (en) * | 2019-04-02 | 2019-06-07 | 中芯长电半导体（江阴）有限公司 | Antenna packages structure and packaging method |
| CN116387799A (en) * | 2023-05-08 | 2023-07-04 | 盛合晶微半导体(江阴)有限公司 | Dual-polarized air coupling antenna packaging structure and preparation method |
-
2019
- 2019-04-02 CN CN201920433772.2U patent/CN209515662U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109860156A (en) * | 2019-04-02 | 2019-06-07 | 中芯长电半导体（江阴）有限公司 | Antenna packages structure and packaging method |
| CN116387799A (en) * | 2023-05-08 | 2023-07-04 | 盛合晶微半导体(江阴)有限公司 | Dual-polarized air coupling antenna packaging structure and preparation method |
| CN116387799B (en) * | 2023-05-08 | 2023-10-27 | 盛合晶微半导体(江阴)有限公司 | Dual-polarized air coupling antenna packaging structure and preparation method |
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Address after: No.78 Changshan Avenue, Jiangyin City, Wuxi City, Jiangsu Province (place of business: No.9 Dongsheng West Road, Jiangyin City) Patentee after: Shenghejing micro semiconductor (Jiangyin) Co.,Ltd. Address before: No.78 Changshan Avenue, Jiangyin City, Wuxi City, Jiangsu Province Patentee before: SJ Semiconductor (Jiangyin) Corp. |