CN207966352U - A kind of device of the Micro LD based on horizontal cavity surface-emitting laser diode technology - Google Patents
A kind of device of the Micro LD based on horizontal cavity surface-emitting laser diode technology Download PDFInfo
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- CN207966352U CN207966352U CN201721926431.6U CN201721926431U CN207966352U CN 207966352 U CN207966352 U CN 207966352U CN 201721926431 U CN201721926431 U CN 201721926431U CN 207966352 U CN207966352 U CN 207966352U
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Abstract
The utility model discloses a kind of devices of the Micro LD based on horizontal cavity surface-emitting laser diode technology, MOS integrated circuits (active matrix) are controlled by computer, MOS integrated circuits can control each horizontal cavity surface-emitting laser diode switch and power in small diode laser matrix respectively, ultimately form image.Micro LD, with the light intensity of bigger, better directionality and better coherence on unit area, have broader practice foreground compared with Micro LED in industrial circle and display field.
Description
Technical field
The utility model is related to a kind of devices of the Micro LD of horizontal cavity surface-emitting laser diode technology.
Background technology
Micro LED technologies rapid advances in recent years, in display field and industrial circle application outburst.And it obtains with apple
The flood tide technological investment of the large enterprises such as fruit, Samsung, BOE.Micro LED technologies, i.e. LED micros and matrixing technology.
Refer to the LED array of high density microsize integrated on a single die, each LED pixel can be determined such as LED display
Location is operated alone and lights.That is Micro LED technologies be by small LED chip array on integrated power supply circuit, with
Integrated power supply circuit individually controls the switch and light and shade of each Micro LED particle, ultimately forms required X-Y scheme.
Since small LED particle is 360 ° luminous in Micro LED, passes through the convergences such as reflective layer, reflector, lenticule and send out
Angle is dissipated, but the final angle of divergence is still very big.In practical applications, it is often necessary to enough light intensity are generated in action face, it is reflective
The light efficiency of LED can be greatly reduced in the mechanism of layer, the convergence angle of divergence such as reflector.Meanwhile also to unit area in practical application
More stringent requirements are proposed for light intensity.
Swashed based on horizontal cavity surface launching to solve the above problems, present utility model application people is worldwide put forward for the first time
Alternative scheme of the Micro LD technologies of optical diode as the next-generation display and commercial Application of Micro LED technologies.Water
Flat cavity surface-emitting laser diode level is in laser diode growth wafer surface transmitting, and resonator axis is perpendicular to PN junction at this time
Surface.Can be understood as horizontal cavity surface-emitting laser diode is all such diode lasers, and the direction of the launch is horizontal
In resonant-cavity surface.Micro LD technologies, i.e., micro- laser diodes matrix technology, that is, (two poles of Laser Diode laser LD
Pipe) micromation and matrixing technology.Micro LD technologies refer to that integrated high density is small on a Micro LD chip
The LD arrays of size, and make each LD pixel can addressing, be operated alone and light.Based on horizontal cavity surface-emitting laser diode
Micro LD technologies, refer to the horizontal cavity surface-emitting laser that high density microsize is integrated on a Micro LD chip
Diode array, and make each horizontal cavity surface-emitting laser diode pixel can addressing, be operated alone and light.
Micro LD are compared with Micro LED, and two orders of magnitude can be improved in unit area light intensity, and the angle of divergence is by LED's
180 ° shine and have converged within 30 °, or even can converge within 5 °.Single-mode laser, each LD can be used in Micro LD particles
The emergent light of particle has better coherence and more consistent polarization state.
Utility model content
A kind of device of the Micro LD based on horizontal cavity surface-emitting laser diode technology of the utility model, to be solved
Problem is to can get the horizontal cavity surface-emitting laser diode battle array that high density microsize is integrated on a Micro LD chip
Row, and make each horizontal cavity surface-emitting laser diode pixel can addressing, be operated alone and light, and then form magnanimity pixel
Arbitrary optical design.It is final obtain be more than the device of tradition Micro LED and other light sources, other devices shown, other
The optical property of the device of exposure.
The utility model includes：Substrate (1), MOS integrated circuits (2), horizontal cavity surface-emission laser diode array (3),
External control system (4)；Pass through the electrod-array (22) on the independently addressable MOS integrated circuits (2) of external control system (4)
Each electrode power supply state, and then it is each by the power supply independent control of each electrode in coordination electrode array (22)
A horizontal cavity surface-emitting laser diode (31) shines and extinguishes, and passes through each of controllable horizontal cavity surface-emitting laser diode
(31) it shines and extinguishes the specific laser pattern needed for final composition.
Substrate (1) material uses silicon substrate or glass base.
The MOS integrated circuits (2) include PMOS, NMOS and CMOS.
MOS integrated circuits (2) surface is contained C >=1 pin (21) and is connect with external control system (4), and electricity is contained
Pole array (22) is connected with horizontal cavity surface-emission laser diode array (3) and is horizontal cavity surface-emission laser diode array
(3) it powers, pin (21) can be in any position of MOS integrated circuits (2).
The MOS integrated circuits (2) contain multilayer circuit structure, and electrod-array is contained on MOS integrated circuits (2) surface
(22), each electrode in electrod-array (22) is independently addressable and independent control current switch, each electrode have its right
The self-powered circuit answered, driving current are provided by thin film transistor (TFT).
The electrod-array (22) shares m rows, and m is the integer more than 1, and n row, n is the integer more than 1, amounts to m*n
Electrode and rectangular arrangement, that is to say, that it is in 90 degree of angles that m rows, which arrange axis M and n row arrangement axis N,.
The horizontal cavity surface-emission laser diode array (3) shares A rows, and A is the integer more than 1, and B row, B is more than 1
Integer horizontal cavity surface-emitting laser diode (31), it is rectangular to amount to A*B horizontal cavity surface-emitting laser diodes (31)
Arrangement, that is to say, that it is in 90 degree of angles that A rows, which arrange axis with B row arrangement axis,.
The Laser emission direction of the horizontal cavity surface-emitting laser diode (31) is perpendicular to substrate (1) plane；Laser wave
Long range is more than or equal to 350 nanometers and is less than or equal to 890 nanometers；Horizontal cavity surface-emitting laser diode (31) length of side is more than or equal to
500 nanometers, it is less than or equal to 500 microns.
The electrod-array (22) shares the A rows of quantity m >=horizontal cavity surface-emission laser diode array (3) of m rows
Quantity A, i.e. m >=A, electrod-array (22) share the B row of quantity n >=horizontal cavity surface-emission laser diode array (3) of n row
Quantity B, n >=B, that is to say, that each horizontal cavity surface-emitting laser diode (31) can be with one or more electrod-arrays
(22) the electrode connection in.
The external control system (4) is the control system that can convert graphics digital signal to required electric signal；Outside
Portion's control system (4), and can independent control electrode by each electrode on more lead (41) connection electrode arrays (22)
The control system of each electrode power supply state on array (22).
Description of the drawings
Fig. 1 is the installation drawing of the Micro LD based on horizontal cavity surface-emitting laser diode technology
Fig. 2 is 45 ° of views of MOS integrated circuits
Fig. 3 is the front view of MOS integrated circuits
Fig. 4 is 45 ° of views of horizontal cavity surface-emission laser diode array
Fig. 5 is the front view of horizontal cavity surface-emission laser diode array
Specific implementation mode
To make the purpose of this utility model, technical solution and advantage be more clearly understood, below in conjunction with specific embodiment, and
With reference to attached drawing, the utility model is further described.
It please refers to shown in attached drawing, the utility model provides a kind of based on horizontal cavity surface-emitting laser diode technology
The device of Micro LD, including：
Substrate (1) material uses silicon substrate or glass base.
- MOS integrated circuits (2) include PMOS, NMOS and CMOS.
- MOS integrated circuits (2) surface is contained C >=1 pin (21) and is connect with external control system (4), and electrode array is contained
(22) are arranged to be connected with horizontal cavity surface-emission laser diode array (3) and supply for horizontal cavity surface-emission laser diode array (3)
Electricity, pin (21) can be in any positions of MOS integrated circuits (2).
- MOS integrated circuits (2) contain multilayer circuit structure, and electrod-array (22) is contained on MOS integrated circuits (2) surface, electricity
Each electrode in pole array (22) is independently addressable and independent control current switch, each electrode have its corresponding independence
Driving circuit, driving current are provided by thin film transistor (TFT).
Electrod-array (22) shares m rows, and m is the integer more than 1, and n row, n is the integer more than 1, amounts to m*n electrode
And rectangular arrangement, that is to say, that it is in 90 degree of angles that m rows, which arrange axis M and n row arrangement axis N,.
Horizontal cavity surface-emission laser diode array (3) shares A rows, and A is the integer more than 1, and B row, B is more than 1
The horizontal cavity surface-emitting laser diode (31) of integer amounts to the A*B rectangular rows of horizontal cavity surface-emitting laser diode (31)
Cloth, that is to say, that it is in 90 degree of angles that A rows, which arrange axis with B row arrangement axis,.
The Laser emission direction of horizontal cavity surface-emitting laser diode (31) is perpendicular to substrate (1) plane；Optical maser wavelength model
It encloses and is less than or equal to 890 nanometers more than or equal to 350 nanometers；Horizontal cavity surface-emitting laser diode (31) length of side is received more than or equal to 500
Rice is less than or equal to 500 microns.
Electrod-array (22) shares the quantity of the A rows of quantity m >=horizontal cavity surface-emission laser diode array (3) of m rows
A, i.e. m >=A, electrod-array (22) share the quantity of the B row of quantity n >=horizontal cavity surface-emission laser diode array (3) of n row
B, n >=B, that is to say, that each horizontal cavity surface-emitting laser diode (31) can in one or more electrod-arrays (22)
Electrode connects.
External control system (4) is the control system that can convert graphics digital signal to required electric signal；Outside control
System (4) processed, and can independent control electrod-array by each electrode on more lead (41) connection electrode arrays (22)
(22) control system of each electrode power supply state on.
The utility model patent passes through the electrod-array on the independently addressable MOS integrated circuits (2) of external control system (4)
(22) each electrode power supply state, and then pass through the power supply independent control of each electrode in coordination electrode array (22)
Each horizontal cavity surface-emitting laser diode (31) shines and extinguishes, and passes through each of controllable two pole of horizontal cavity surface-emitting laser
(31) are managed to shine and extinguish the specific laser pattern needed for final composition.Final obtain is more than tradition Micro LED and other light
The optical property of the device in source, the device of other displays, other devices exposed.
It should be understood that after having read the content of the utility model, those skilled in the art can do the utility model respectively
Kind change or modification, such equivalent forms are equally in the scope of the appended claims of the present application.
Claims (10)
1. a kind of device of the Micro LD based on horizontal cavity surface-emitting laser diode technology includes：Substrate (1), MOS are integrated
Circuit (2), horizontal cavity surface-emission laser diode array (3), external control system (4)；It can be only by external control system (4)
Each electrode power supply state of electrod-array (22) on vertical addressing MOS integrated circuits (2), and then pass through coordination electrode array
(22) each horizontal cavity surface-emitting laser diode (31) of the power supply independent control of each electrode in shines and extinguishes, and leads to
Each of controllable horizontal cavity surface-emitting laser diode (31) is crossed to shine and extinguish the specific laser pattern needed for final composition.
2. the device of Micro LD based on horizontal cavity surface-emitting laser diode technology according to claim 1 a kind of,
It is characterized in that, substrate (1) material uses silicon substrate or glass base.
3. the device of Micro LD based on horizontal cavity surface-emitting laser diode technology according to claim 1 a kind of,
It is characterized in that, MOS integrated circuits (2) include PMOS, NMOS and CMOS.
4. the device of Micro LD based on horizontal cavity surface-emitting laser diode technology according to claim 1 a kind of,
It is connect with external control system (4) it is characterized in that, C >=1 pin (21) is contained on MOS integrated circuits (2) surface, contains electrode
Array (22) is connected with horizontal cavity surface-emission laser diode array (3) and is horizontal cavity surface-emission laser diode array (3)
Power supply, pin (21) can be in any position of MOS integrated circuits (2).
5. the device of Micro LD based on horizontal cavity surface-emitting laser diode technology according to claim 1 a kind of,
It is characterized in that, MOS integrated circuits (2) contain multilayer circuit structure, electrod-array (22) is contained on MOS integrated circuits (2) surface,
Each electrode in electrod-array (22) is independently addressable and independent control current switch, each electrode have its corresponding solely
Vertical driving circuit, driving current are provided by thin film transistor (TFT).
6. the device of Micro LD based on horizontal cavity surface-emitting laser diode technology according to claim 4 a kind of,
It is characterized in that, electrod-array (22) shares m rows, m is the integer more than 1, and n row, n is the integer more than 1, amounts to m*n electricity
Pole and rectangular arrangement, that is to say, that it is in 90 degree of angles that m rows, which arrange axis M and n row arrangement axis N,.
7. the device of Micro LD based on horizontal cavity surface-emitting laser diode technology according to claim 1 a kind of,
It is characterized in that, horizontal cavity surface-emission laser diode array (3) shares A rows, A is the integer more than 1, and B row, B is more than 1
The horizontal cavity surface-emitting laser diode (31) of integer amounts to the A*B rectangular rows of horizontal cavity surface-emitting laser diode (31)
Cloth, that is to say, that it is in 90 degree of angles that A rows, which arrange axis with B row arrangement axis,.
8. the device of Micro LD based on horizontal cavity surface-emitting laser diode technology according to claim 7 a kind of,
It is characterized in that, the Laser emission direction of horizontal cavity surface-emitting laser diode (31) is perpendicular to substrate (1) plane；Optical maser wavelength
Range is more than or equal to 350 nanometers and is less than or equal to 890 nanometers；Horizontal cavity surface-emitting laser diode (31) length of side is more than or equal to 500
Nanometer is less than or equal to 500 microns.
9. the device of Micro LD based on horizontal cavity surface-emitting laser diode technology according to claim 5 a kind of,
It is characterized in that, electrod-array (22) shares the number of the A rows of quantity m >=horizontal cavity surface-emission laser diode array (3) of m rows
A, i.e. m >=A are measured, electrod-array (22) shares the number of the B row of quantity n >=horizontal cavity surface-emission laser diode array (3) of n row
Measure B, n >=B, that is to say, that each horizontal cavity surface-emitting laser diode (31) can in one or more electrod-arrays (22)
Electrode connects.
10. the device of Micro LD based on horizontal cavity surface-emitting laser diode technology according to claim 1 a kind of,
It is characterized in that, external control system (4) is the control system that can convert graphics digital signal to required electric signal；It is external
Control system (4), and can independent control electrode array by each electrode on more lead (41) connection electrode arrays (22)
Arrange the control system of each electrode power supply state on (22).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721926431.6U CN207966352U (en) | 2017-12-29 | 2017-12-29 | A kind of device of the Micro LD based on horizontal cavity surface-emitting laser diode technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721926431.6U CN207966352U (en) | 2017-12-29 | 2017-12-29 | A kind of device of the Micro LD based on horizontal cavity surface-emitting laser diode technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207966352U true CN207966352U (en) | 2018-10-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721926431.6U Active CN207966352U (en) | 2017-12-29 | 2017-12-29 | A kind of device of the Micro LD based on horizontal cavity surface-emitting laser diode technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207966352U (en) |
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2017
- 2017-12-29 CN CN201721926431.6U patent/CN207966352U/en active Active
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| TR01 | Transfer of patent right |
Effective date of registration: 20210804 Address after: 100000 No. a2079, floor 2, building 2, No. 14, Zhonghe street, Beijing Economic and Technological Development Zone (centralized office area) Patentee after: Beijing digital optical core technology Co.,Ltd. Address before: 100083 block a, building 5, Jiulong garden, Shuangjing, Chaoyang District, Beijing Patentee before: BEIJING DERUI INDUSTRY AND TRADE Co.,Ltd. |
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