CN207441751U - A kind of homojunction perovskite thin film solar cell - Google Patents
A kind of homojunction perovskite thin film solar cell Download PDFInfo
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- CN207441751U CN207441751U CN201721683313.7U CN201721683313U CN207441751U CN 207441751 U CN207441751 U CN 207441751U CN 201721683313 U CN201721683313 U CN 201721683313U CN 207441751 U CN207441751 U CN 207441751U
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- thin film
- perovskite thin
- solar cell
- homojunction
- perovskite
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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Abstract
The utility model discloses a kind of homojunction perovskite thin film solar cells, which is characterized in that the structure of the solar cell sequentially consists of：Transparent conductive substrate 1, p-type perovskite thin film 2, N-type perovskite thin film 3, anti-reflecting layer 4, metal electrode 5.The utility model has the advantage of：（1）Using homojunction perovskite thin film form solar cell give full play to the good absorbing properties of perovskite, avoid carrier in transport process due to material lattice mismatch and it is compound, improve carrier mobility；（2）Utilize the effect of anti-reflecting layer hydrophobic anti-reflection, on the one hand absorption of the battery to sunlight is increased, on the other hand the physical contact effectively between barrier metal electrode and perovskite thin film, prevent the energy and loss of charge of the compound initiation of interface charge, and the water oxygen in air is effectively obstructed into perovskite thin film is caused to be degraded, so as to improve the stability of perovskite thin film solar cell and photoelectric conversion efficiency.
Description
Technical field
The utility model belongs to new energy field, and in particular to a kind of knot of homojunction perovskite thin film solar cell
Structure.
Background technology
2009, first piece of solar cell based on organic inorganic hybridization perovskite semi-conducting material realized 3.8%
Photoelectric conversion efficiency, in a few years time, transfer efficiency has reached 22.1%, therefore, perovskite solar cell material
One of 10 big sciences breakthrough is chosen as by Science periodicals in 2013.At present, the authentication efficiency more than 20% is all limited only to small
Area perovskite thin film solar cell.For large area perovskite thin film solar cell, recently, Shanghai Communications University's material
The Han Liyuan professors team of metallic composite National Key Laboratory of scientific and engineering institute, they exempt from vacuum item in no solution
Under part, the large area perovskite thin film solar cell that effective area is 36.1 square centimeters is prepared, and its photoelectricity turns
It changes efficiency and has reached 12.1%.
When the materials band width that theoretical calculation shows to manufacture solar cell is 1.4-1.5ev, high efficiency can be realized
Opto-electronic conversion.The bandwidth of traditional silicon is 1.12ev, is closer to the optimal bandwidth of solar cell material, for
For monocrystalline silicon, the constraint that electronics shakes off silicon atom forms the photon energy needed for free charge as 1.1ev, and when these electronics
It reaches electrode and enters in current loop the loss of voltage 0.4ev, these advantages and silicon solar cell is commercialized.But silicon
It is indirect bandgap material, and higher price.Perovskite solar cell has the high open circuit similar to business silicon solar cell
Voltage, during electronics strains at the leass into current loop, the loss of perovskite battery is also 0.4ev, with silicon solar electricity
Pond loss is identical.And perovskite is direct band-gap semicondictor, and its energy gap is 1.55ev, with manufacturing solar cell material
Optimal bandwidth it is very close, electrical conductivity and carrier mobility are high.Moreover, perovskite material is because of its delustring system
Number is high and has good absorbing properties, and very thin thickness can absorb most visible ray and be used for opto-electronic conversion, especially
On blue light and green light is absorbed, hence it is evident that be better than silion cell.In addition, perovskite takes in alkaline rock or the pyroxenite of alteration
Not to the utmost, it is nexhaustible, and it is cheap, can solution prepare, low energy consumption, and the manufacturing process of material is easy, available for extensive raw
Production.But realize that marketization application is also faced with many problems, such as the stability, photoelectric conversion efficiency and perovskite of battery device
Material is to tolerance of air and water etc..
The content of the invention
In order to fully absorb sunlight and effectively improve the stability and photoelectric conversion efficiency of perovskite solar cell, this
Utility model provides a kind of homojunction perovskite thin film solar cell, which is characterized in that the structure of the solar cell
It sequentially consists of：Transparent conductive substrate, p-type perovskite thin film, N-type perovskite thin film, anti-reflecting layer, metal electrode.Institute
It is ITO electro-conductive glass or FTO electro-conductive glass or graphene or organic flexible electrically conducting transparent plastics to state transparent conductive substrate；The calcium
Titanium ore film is CH3NH3PbI3Or CH3NH3PbBr3Or CH3NH3PbCl3；The anti-reflecting layer is silica membrane or nitridation
Silicon thin film；The metal electrode is metal silver electrode or aluminium electrode.The utility model has the advantage of：（1）Utilize homojunction calcium
Titanium ore film, which forms solar cell, can give full play to the good absorbing properties of perovskite, and very thin thickness can absorb almost
Whole visible rays is for opto-electronic conversion, especially on blue light and green light is absorbed, hence it is evident that it is better than silion cell, then and, homojunction is too
Positive energy battery can avoid carrier compound since material lattice mismatches in transport process, improve carrier mobility
Rate；（2）Using the effect of anti-reflecting layer hydrophobic anti-reflection, on the one hand increase absorption of the solar cell to sunlight, on the other hand
Physical contact effectively between barrier metal electrode and perovskite thin film prevents the energy of the compound initiation of interface charge and charge damage
It loses, also, the water oxygen entrance that the design feature of porous densification possessed by anti-reflecting layer can be obstructed effectively in air causes calcium
Titanium ore film degradation.Based on these advantages, thus the utility model can effectively improve the steady of perovskite thin film solar cell
Qualitative and photoelectric conversion efficiency.
Description of the drawings：
Attached drawing 1 is a kind of layer structure schematic diagram of homojunction perovskite thin film solar cell provided by the utility model.
1 label declaration of attached drawing：
1- transparent conductive substrates；
2-P type perovskite thin films；
3-N type perovskite thin films；
4- anti-reflecting layers；
5- metal electrodes.
Specific embodiment
Below in conjunction with the accompanying drawings 1 and specific embodiment the utility model is described in further detail, but the utility model content is not
It is only limitted to the content involved in embodiment.
The utility model structure as shown in attached drawing 1, it includes the transparent conductive substrate 1 being sequentially distributed from bottom to up, p-type calcium
Titanium ore film 2, N-type perovskite thin film 3, anti-reflecting layer 4, metal electrode 5.
Embodiment one：
First, one piece of clean FTO electro-conductive glass is taken, is sunk successively on FTO electro-conductive glass using gas phase assisted solution method
Product p-type perovskite thin film and N-type perovskite thin film；Then, deposited using chemical vapour deposition technique on N-type perovskite thin film surface
Silica membrane；Finally, deposited metal is distinguished on silica membrane surface and FTO electro-conductive glass using silk screen print method
The perovskite thin film solar cell is made in aluminium electrode.
Embodiment two：
First, one piece of clean ITO electro-conductive glass is taken, is sunk successively on ITO electro-conductive glass using double source vapour deposition process
Product p-type perovskite thin film and N-type perovskite thin film；Then, using sol-gal process in N-type perovskite thin film surface cvd nitride
Silicon thin film；Finally, deposited metal silver electrode is distinguished on silicon nitride film surface and ITO electro-conductive glass using vacuum vapour deposition,
The perovskite thin film solar cell is made.
Embodiment three：
First, one block of clean organic flexible electrically conducting transparent plastics is taken, is led using a step solwution method organic flexible is transparent
P-type perovskite thin film and N-type perovskite thin film are sequentially depositing on electric plastics；Then, using physical vaporous deposition in N-type calcium titanium
Ore deposit film surface cvd nitride silicon thin film；Finally, led using silk screen print method silicon nitride film surface and organic flexible are transparent
Deposited metal aluminium electrode is distinguished on electric plastics, that is, the perovskite thin film solar cell is made.
Example IV：
First, one piece of clean graphene is taken, p-type perovskite thin film is sequentially depositing on graphene using two step solwution methods
With N-type perovskite thin film；Then, using physical vaporous deposition in N-type perovskite thin film surface cvd nitride silicon thin film；Most
Afterwards, deposited metal silver electrode is distinguished on silicon nitride film surface and graphene using vacuum vapour deposition, that is, the calcium is made
Titanium ore thin-film solar cells.
Claims (4)
1. a kind of homojunction perovskite thin film solar cell, which is characterized in that the structure of the solar cell is from bottom to up
It is followed successively by：Transparent conductive substrate, p-type perovskite thin film, N-type perovskite thin film, anti-reflecting layer, metal electrode.
2. solar cell according to claim 1, which is characterized in that the transparent conductive substrate is ITO electro-conductive glass
Or FTO electro-conductive glass or graphene or organic flexible electrically conducting transparent plastics.
3. solar cell according to claim 1, which is characterized in that the perovskite thin film is CH3NH3PbI3Or
CH3NH3PbBr3Or CH3NH3PbCl3。
4. solar cell according to claim 1, which is characterized in that the anti-reflecting layer is silica membrane or nitrogen
SiClx film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721683313.7U CN207441751U (en) | 2017-12-07 | 2017-12-07 | A kind of homojunction perovskite thin film solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721683313.7U CN207441751U (en) | 2017-12-07 | 2017-12-07 | A kind of homojunction perovskite thin film solar cell |
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| CN207441751U true CN207441751U (en) | 2018-06-01 |
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| CN201721683313.7U Expired - Fee Related CN207441751U (en) | 2017-12-07 | 2017-12-07 | A kind of homojunction perovskite thin film solar cell |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107768523A (en) * | 2017-12-07 | 2018-03-06 | 湖南师范大学 | A kind of homojunction perovskite thin film solar cell and preparation method thereof |
| CN109786564A (en) * | 2019-01-10 | 2019-05-21 | 蜂巢能源科技有限公司 | Perovskite thin film solar battery |
| CN116600583A (en) * | 2023-07-13 | 2023-08-15 | 北京曜能科技有限公司 | Solar cell and preparation method thereof |
-
2017
- 2017-12-07 CN CN201721683313.7U patent/CN207441751U/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107768523A (en) * | 2017-12-07 | 2018-03-06 | 湖南师范大学 | A kind of homojunction perovskite thin film solar cell and preparation method thereof |
| CN107768523B (en) * | 2017-12-07 | 2024-03-05 | 湖南师范大学 | Homogeneous junction perovskite thin film solar cell and preparation method thereof |
| CN109786564A (en) * | 2019-01-10 | 2019-05-21 | 蜂巢能源科技有限公司 | Perovskite thin film solar battery |
| CN109786564B (en) * | 2019-01-10 | 2022-04-22 | 无锡极电光能科技有限公司 | Perovskite thin film solar cell |
| CN116600583A (en) * | 2023-07-13 | 2023-08-15 | 北京曜能科技有限公司 | Solar cell and preparation method thereof |
| CN116600583B (en) * | 2023-07-13 | 2023-10-03 | 北京曜能科技有限公司 | Solar cell and preparation method thereof |
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Granted publication date: 20180601 Termination date: 20201207 |
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| CF01 | Termination of patent right due to non-payment of annual fee |