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CN207441688U - Radiating subassembly, semiconductor heater and semiconductor cooking apparatus - Google Patents

Radiating subassembly, semiconductor heater and semiconductor cooking apparatus Download PDF

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Publication number
CN207441688U
CN207441688U CN201721646920.6U CN201721646920U CN207441688U CN 207441688 U CN207441688 U CN 207441688U CN 201721646920 U CN201721646920 U CN 201721646920U CN 207441688 U CN207441688 U CN 207441688U
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China
Prior art keywords
heat
air passage
radiating
radiating substrate
fin
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CN201721646920.6U
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Chinese (zh)
Inventor
邓洋
刘建伟
孙宁
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Midea Group Co Ltd
Guangdong Midea Kitchen Appliances Manufacturing Co Ltd
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Midea Group Co Ltd
Guangdong Midea Kitchen Appliances Manufacturing Co Ltd
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Abstract

The utility model discloses a kind of half radiating subassembly, semiconductor heater and semiconductor cooking apparatus, the radiating subassemblies of semiconductor heater to include:Heat-radiating substrate;Transistor, transistor are located on heat-radiating substrate;Heat conducting pipe, heat conducting pipe have a first end and a second end, and second end is located on heat-radiating substrate and adjacent transistors are set, and first end stretches out the outer edge of heat-radiating substrate;First fin component, the first fin component are located in first end and the first air passage are formed in the first fin component;Second fin component, the second fin component are located on heat-radiating substrate and limit the second air passage jointly with heat-radiating substrate;First wind turbine, the first wind turbine are located in the first air passage;Second wind turbine, the second wind turbine are located in the second air passage.The uniform, good heat dissipation effect that radiates is had many advantages, such as according to the radiating subassembly of the semiconductor heater of the utility model embodiment.

Description

Radiating subassembly, semiconductor heater and semiconductor cooking apparatus
Technical field
The utility model is related to electric appliance manufacturing technology field, in particular to a kind of heat dissipation of semiconductor heater Component, semiconductor heater and semiconductor cooking apparatus.
Background technology
The radiating subassembly of semiconductor heater in correlation technique, for ensure heat dissipation area cause the volume of radiating subassembly compared with Greatly, and radiating subassembly the temperature difference is larger everywhere, the heat dissipation for causing radiating subassembly is extremely uneven, influence radiating subassembly heat dissipation effect Fruit.
Utility model content
The utility model is intended at least solve one of technical problem in the prior art.For this purpose, the utility model carries Go out a kind of radiating subassembly of semiconductor heater, the radiating subassembly of the semiconductor heater has uniform, the heat dissipation effect that radiates The advantages that fruit is good.
The utility model also proposes a kind of semiconductor heater of the radiating subassembly with the semiconductor heater.
The utility model also proposes a kind of semiconductor cooking apparatus with the semiconductor heater.
To achieve the above object, the embodiment of first aspect according to the present utility model proposes a kind of semiconductor heater Radiating subassembly, the radiating subassembly of the semiconductor heater includes:Heat-radiating substrate;Transistor, the transistor are located at institute It states on heat-radiating substrate;Heat conducting pipe, the heat conducting pipe have a first end and a second end, and the second end is located on the heat-radiating substrate And the neighbouring transistor is set, the first end stretches out the outer edge of the heat-radiating substrate;First fin component, described first Fin component is located in the first end and the first air passage is formed in first fin component;Second fin component, described Two fin components are located on the heat-radiating substrate and limit the second air passage jointly with the heat-radiating substrate;First wind turbine, it is described First wind turbine is located in first air passage;Second wind turbine, second wind turbine are located in second air passage.
According to the radiating subassembly of the semiconductor heater of the utility model embodiment, there is the uniform, heat dissipation effect that radiates The advantages that good.
In addition, can also be had according to the radiating subassembly of the semiconductor heater of the utility model above-described embodiment as follows Additional technical characteristic:
One embodiment according to the present utility model, the radiating subassembly of the semiconductor heater further include pcb board, institute It states second end and the pcb board is respectively provided on two opposite surfaces of the heat-radiating substrate, the transistor and the PCB Plate is connected.So it is convenient for the setting of the transistor.
One embodiment according to the present utility model, the heat-radiating substrate are equipped with the air passage formed by machining Slot, the air passage slot extend to a side edge away from the heat conducting pipe, second fin in the middle part of the heat-radiating substrate Component cooperation limits second air passage jointly in the air passage slot and with the inner surface of the air passage slot.Can so it increase The heat dissipation area of big second fin component and the heat-radiating substrate.
Another embodiment according to the present utility model, the heat-radiating substrate are multiple equipped with being formed by machining Radiation tooth, second fin component are located at the radiation tooth and limit second air passage jointly with the radiation tooth. The heat dissipation area of the heat-radiating substrate can so be increased.
Optionally, first fin component includes:First fin cover board is formed with first in the first fin cover board Air passage;Multiple first fins, multiple first fins be located in first air passage and each first fin respectively with The heat conducting pipe is connected with the first fin cover board.So it is convenient for the setting of first fin.
Further embodiment according to the present utility model, second fin component include:Second fin cover board, described Two fin cover boards are located on the heat-radiating substrate and limit second air passage, multiple second wings jointly with the heat-radiating substrate Piece, multiple second fins be located in second air passage and each second fin respectively with the heat-radiating substrate and institute The second fin cover board is stated to be connected.So it is convenient for the formation in second air passage.
Optionally, the heat-radiating substrate is equipped with tube seat, and the second end of the heat conducting pipe coordinates in the tube seat. The heat conducting pipe can so be positioned using the tube seat.
Further, solder(ing) paste is coated between the inner surface of the outer surface of the heat conducting pipe and the tube seat.So may be used In order to the welding of the heat conducting pipe.
Optionally, the heat conducting pipe is alternatively arranged for multiple and along second air passage air supply directions.So convenient for increasing The heat-conducting area of the big heat conducting pipe.
Further, the air supply direction in first air passage and the air supply direction in second air passage are parallel and led with described The length direction of heat pipe is vertical.So it is convenient for cooling down the transistor.
One embodiment according to the present utility model, the heat-radiating substrate is copper plate and is equipped with to weld the PCB The wire casing of plate, for welding the tube seat of the heat conducting pipe and crystal tube seat.So can utilize the wire casing to the pcb board into Row positioning.
Another embodiment according to the present utility model, the heat-radiating substrate is aluminium sheet and is equipped with to weld the PCB The wire casing of plate, for welding the tube seat of the heat conducting pipe and crystal tube seat, in the wire casing, the tube seat and the crystal tube seat Nickel plating or silver-plated process.The weight and cost of the heat-radiating substrate can so be reduced.
Another embodiment according to the present utility model, the heat-radiating substrate is the aluminium sheet for being embedded with red copper block, described to lead Heat pipe is connected with the red copper block.The heat conductivility of the heat-radiating substrate can so be improved.
The embodiment of second aspect according to the present utility model proposes a kind of semiconductor heater, the semiconductor heating Device includes the radiating subassembly of the semiconductor heater described in the embodiment of first aspect according to the present utility model.
According to the semiconductor heater of the utility model embodiment, by using first aspect according to the present utility model Embodiment described in semiconductor heater radiating subassembly, have many advantages, such as heat dissipation uniformly, good heat dissipation effect.
The embodiment of the third aspect according to the present utility model proposes a kind of semiconductor cooking apparatus, the semiconductor culinary art Utensil includes the semiconductor heater described in the embodiment of second aspect according to the present utility model.
According to the semiconductor cooking apparatus of the utility model embodiment, by using second aspect according to the present utility model Embodiment described in semiconductor heater, have many advantages, such as heat dissipation uniformly, good heat dissipation effect.
The additional aspect and advantage of the utility model will be set forth in part in the description, partly will be from following description In become apparent or recognized by the practice of the utility model.
Description of the drawings
The above-mentioned and/or additional aspect and advantage of the utility model will in the description from combination accompanying drawings below to embodiment Become apparent and be readily appreciated that, wherein:
Fig. 1 is the structure diagram according to the radiating subassembly of the semiconductor heater of the utility model embodiment.
Fig. 2 is the structure diagram according to the radiating subassembly of the semiconductor heater of the utility model embodiment.
Fig. 3 is the structure diagram according to the radiating subassembly of the semiconductor heater of the utility model embodiment.
Fig. 4 is the sectional view according to the radiating subassembly of the semiconductor heater of the utility model embodiment.
Fig. 5 is the sectional view according to the radiating subassembly of the semiconductor heater of the utility model embodiment.
Fig. 6 is the enlarged drawing at D in Fig. 5.
Fig. 7 is the enlarged drawing at E in Fig. 5.
Fig. 8 is the enlarged drawing at F in Fig. 5.
Reference numeral:Radiating subassembly 1, heat-radiating substrate 100, air passage slot 110, tube seat 130, transistor 200, heat conducting pipe 300, First end 310, second end 320, the first fin component 400, the first air passage 410, the first fin cover board 420, the first fin 430, Second fin component 500, the second air passage 510, the second fin cover board 520, the second fin 530, the first wind turbine 600, the second wind turbine 700th, pcb board 800.
Specific embodiment
The embodiment of the utility model is described below in detail, the example of the embodiment is shown in the drawings, wherein from beginning Same or similar element is represented to same or similar label eventually or there is same or like element.Below by ginseng The embodiment for examining attached drawing description is exemplary, and is only used for explaining the utility model, and it is not intended that the utility model Limitation.
Below with reference to the accompanying drawings radiating subassembly 1 according to the semiconductor heater of the utility model embodiment is described.
As Figure 1-Figure 8, heat dissipation is included according to the radiating subassembly 1 of the semiconductor heater of the utility model embodiment Substrate 100, transistor 200, heat conducting pipe 300, the first fin component 400, the second fin component 500, the first wind turbine 600, second Wind turbine 700 and pcb board 800.
Transistor 200 is located on heat-radiating substrate 100.Heat conducting pipe 300 has first end 310 and second end 320, second end 320 are located on heat-radiating substrate 100 and adjacent transistors 200 are set, and first end 310 stretches out the outer edge of heat-radiating substrate 100.First Fin component 400 is located in first end 310 and forms the first air passage 410 in the first fin component 400.Second fin component 500 It is located on heat-radiating substrate 100 and limits the second air passage 510 jointly with heat-radiating substrate 100.First wind turbine 600 is located at the first air passage In 410.Second wind turbine 700 is located in the second air passage 510.
Specifically, transistor 200 is used to control the semiconductor heater.
Below with reference to the accompanying drawings the work of radiating subassembly 1 according to the semiconductor heater of the utility model embodiment is described Process.
When radiating subassembly 1 works, the substantial amounts of heat that radiating subassembly 1 generates transistor 200 passes through heat-radiating substrate 100 With the heat transfer of heat conducting pipe 300, heat is quickly and evenly conducted respectively to the first fin component 400 and the second fin component 500, then the first fin component 400 and the second fin are flowed separately through by the cooling wind that the first wind turbine 600 and the second wind turbine 700 are blown out Component 500 takes away the heat in fin component, to realize the heat dissipation of transistor 200.
According to the radiating subassembly 1 of the semiconductor heater of the utility model embodiment, by setting heat conducting pipe 300, One fin component 400 and the second fin component 500 can realize double heat dissipation wind channel heat dissipations, can so improve radiating subassembly 1 Radiating efficiency improves radiating subassembly 1 to the heat dissipation effect of transistor 200, avoids 200 temperature of transistor excessively high and influence transistor 200 normal work or even the damage for causing transistor 200, convenient for raising 200 temperature controlled accuracy of transistor and reliably Property, convenient for improving the performance of transistor 200, convenient for extending the service life of transistor 200, convenient for improving the semiconductor The reliability and stability of heating unit.
Also, by setting heat conducting pipe 300, not only heat can be quickly and evenly conducted to the first fin component 400 On, play the role of uniform temperature, and can utilize heat conducting pipe 300 that heat is made quickly to be transferred on the second fin component 500, Make the temperature on the second fin component 500 more uniform, compared to the radiating subassembly in correlation technique, 1 surface of radiating subassembly is everywhere Temperature Distribution evenly, the temperature difference is smaller, convenient for improve radiating subassembly 1 heat dissipation uniformity, avoid heat dissipation unevenness make heat dissipation group Part 1 generates thermal stress and influences the use of radiating subassembly 1, further convenient for the heat dissipation performance of raising radiating subassembly 1.
In addition, radiating subassembly 1 is by setting 500 two fin heat dissipation groups of the first fin component 400 and the second fin component Part, compared to the radiating subassembly in correlation technique, while heat dissipation area is ensured, the structure of radiating subassembly 1 is more reasonable, avoids The volume of radiating subassembly 1 is larger, convenient for saving the inner space of the semiconductor heater, heats and fills convenient for the semiconductor The internal structure layout put.
Therefore, there is uniform, heat dissipation of radiating according to the radiating subassembly 1 of the semiconductor heater of the utility model embodiment The advantages that effect is good.
Below with reference to the accompanying drawings radiating subassembly 1 according to the semiconductor heater of the utility model specific embodiment is described.
In some specific embodiments of the utility model, as Figure 1-Figure 8, according to the half of the utility model embodiment The radiating subassembly 1 of conductor heating unit includes heat-radiating substrate 100, transistor 200, heat conducting pipe 300, the first fin component 400, the Two fin components 500, the first wind turbine 600, the second wind turbine 700 and pcb board 800.
Specifically, as shown in Fig. 2, radiating subassembly 1 further includes pcb board 800, the second end 320 and pcb board of heat conducting pipe 300 800 are respectively provided on two opposite surfaces of heat-radiating substrate 100, and transistor 200 is connected with pcb board 800.So it is not only convenient for The setting of transistor 200 avoids heat conducting pipe 300 and pcb board 800 from interfering, and convenient for transistor 200 to the semiconductor Heating unit is controlled.
In a specific embodiment of the utility model, added as shown in Fig. 2, heat-radiating substrate 100 is equipped with by cutting The air passage slot 110 that work forms, air passage slot 110 extend to a side edge away from heat conducting pipe 300 from the middle part of heat-radiating substrate 100, Second fin component 500 coordinates in air passage slot 110 and limits the second air passage 510 jointly with the inner surface of air passage slot 110.This Sample can not only increase the heat dissipation area of the second fin component 500 and heat-radiating substrate 100, improve the radiating efficiency of radiating subassembly 1, And the weight of heat-radiating substrate 100 can be reduced, the structure for further making radiating subassembly 1 is compacter.Meanwhile reduce heat dissipation base The thickness of plate 100 can reduce the volume of heat-radiating substrate 100, so as to reduce the volume of radiating subassembly 1, further make heat dissipation group The structure of part 1 is more reasonable.
In another specific embodiment of the utility model, heat-radiating substrate 100 is equipped with what is formed by machining Multiple radiation tooth (not shown)s, the second fin component 500 are located at the radiation tooth and are limited jointly with the radiation tooth Go out the second air passage 510.The heat dissipation area of heat-radiating substrate 100 can so be increased, the radiating efficiency of heat-radiating substrate 100 is improved, carry The heat dissipation effect of high heat-radiating substrate 100.
Optionally, as shown in figure 4, the first fin component 400 includes the first fin cover board 420 and multiple first fins 430, The first air passage 410 is formed in first fin cover board 420.Multiple first fins 420 are located in the first air passage 410 and each first Fin 430 is connected respectively with 300 and first fin cover board 420 of heat conducting pipe.So it is convenient for the setting of the first fin 420, convenient for the The formation in one air passage 410 convenient for heat dissipation area of the first fin component 400 of increase in the first air passage 410, improves the first fin The heat dissipation performance of component 400.
Specifically, as shown in figure 4, the second fin component 500 includes the second fin cover board 520 and multiple second fins 530, Second fin cover board 520 is located on heat-radiating substrate 100 and limits the second air passage 510 jointly with heat-radiating substrate 100.Multiple second Fin 530 be located in the second air passage 510 and each second fin 530 respectively with 100 and second fin cover board of heat-radiating substrate, 520 phase Even.So it is convenient for the formation in the second air passage 510, convenient for the heat dissipation area in the second air passage 510 of increase, the is taken away convenient for cooling wind The heat of two fin components 500 improves the heat dissipation effect of the second fin component 500.
Specifically, the first fin 430 and the second fin 530 can be to fasten fin, the first air passage 410 and the second air passage 510 be surrounding face closure, the structure of both ends open, and the first wind turbine 600 and the second wind turbine 700 are separately positioned on the first air passage 410 With the one end in the second air passage 510, the interface leakproofness in wind turbine and air passage is good.
Optionally, as shown in figure 5, heat-radiating substrate 100 is equipped with tube seat 130, the second end 320 of heat conducting pipe 300 coordinates In tube seat 130.So heat conducting pipe 300 can not only be positioned using tube seat 130, but also convenient for increase heat-radiating substrate 100 With the contact area of heat conducting pipe 300, heat conducting pipe 300 is transferred heat to convenient for heat-radiating substrate 100.Meanwhile it radiates convenient for reducing The volume of substrate 100 mitigates the weight of heat-radiating substrate 100, convenient for the layout of 1 structure of radiating subassembly.
Further, solder(ing) paste is coated between the inner surface of the outer surface of heat conducting pipe 300 and tube seat 130.Specifically, If heat-radiating substrate 100 is copper plate, in the second end 320 of heat conducting pipe 300 coats one layer of solder(ing) paste insertion tube seat 130, adopt With the technique of hot air convection Reflow Soldering, heat conducting pipe 300 is welded in tube seat 130, if heat-radiating substrate 100 is aluminium sheet, tube seat 130 need first to carry out nickel plating or silver-plated process, then coat one layer of solder(ing) paste insertion tube seat 130 in the second end 320 of heat conducting pipe 300 In, using the technique of hot air convection Reflow Soldering, heat conducting pipe 300 is welded in tube seat 130.It so can be in order to heat conducting pipe 300 Welding, convenient for heat conducting pipe 300 is firmly installed on heat-radiating substrate 100, ensure heat conducting pipe 300 and heat-radiating substrate 100 it Between the reliability and stability that are fixedly connected.
Specifically, heat conducting pipe 300, which is stretched out at tube seat 130, can carry out bending processing.So can further it reduce The thickness of radiating subassembly 1.
Optionally, heat conducting pipe 300 can not also use bending to handle.So convenient for the production and processing of simplified heat conducting pipe 300 Process.
Specifically, as shown in figure 4, heat conducting pipe 300 is alternatively arranged for multiple and along the second air passage 510 air supply directions.This Sample, will convenient for heat conducting pipe 300 convenient for improving the heat transfer rate of heat conducting pipe 300 convenient for the heat-conducting area of increase heat conducting pipe 300 Heat is transmitted to the first fin component 400.
More specifically, as shown in figure 4, the air supply direction in the first air passage 410 and the air supply direction in the second air passage 510 are parallel It is and vertical with the length direction of heat conducting pipe 300.So convenient for the first fin component 400 and the second fin component 500 to heat conducting pipe 300 cool down, convenient for being cooled down to transistor 200.
In a specific embodiment of the utility model, heat-radiating substrate 100 is copper plate and is equipped with to weld pcb board 800 wire casing, for welding the tube seat 130 of heat conducting pipe 300 and crystal tube seat.The wire casing, 130 and of tube seat can so be utilized The crystal tube seat positions pcb board 800, heat conducting pipe 300 and transistor 200, convenient for pcb board 800 is welded to heat dissipation On substrate 100.Simultaneously as red copper material heat conductivility is more preferable, the heat conductivility of heat-radiating substrate 100 can be improved, convenient for more Quickly and evenly by the heat derives in transistor 200, convenient for reducing the temperature difference on 100 surface of heat-radiating substrate.
In another specific embodiment of the utility model, heat-radiating substrate 100 is aluminium sheet and is equipped with to weld pcb board 800 wire casing, for welding the tube seat 130 of heat conducting pipe 300 and crystal tube seat, the wire casing, tube seat 130 and the crystal tube seat Interior nickel plating or silver-plated process.The weight and cost of heat-radiating substrate 100 can so be reduced.
In another specific embodiment of the utility model, heat-radiating substrate 100 is to be embedded with the aluminium sheet of red copper block, heat conduction Pipe 300 is connected with the red copper block.Since red copper material heat conductivility is more preferable, heat-radiating substrate 100 so can be not only improved Heat conductivility, convenient for more rapidly equably by the heat derives in transistor 200, convenient for reducing the temperature on 100 surface of heat-radiating substrate Difference, and the use of red copper material can be saved, reduce the cost of heat-radiating substrate 100.Pcb board 800 is in a temperature simultaneously On relatively uniform heat-radiating substrate 100, the thermal stress of pcb board 800 can be reduced.
Below with reference to the accompanying drawings specifically describe according to the radiating subassembly 1 of the semiconductor heater of the utility model embodiment The course of work.
When radiating subassembly 1 works, the substantial amounts of heat that radiating subassembly 1 generates transistor 200 passes through heat-radiating substrate 100 With the heat transfer of multiple heat conducting pipes 300, heat is quickly and evenly conducted respectively to the first fin component 400 and the second fins set Part 500, then the cooling wind blown out by the first wind turbine 600 and the second wind turbine 700 flow separately through the first wind of the first fin component 400 Second air passage 510 of 410 and second fin component 500 of road, takes away the heat in fin component, to realize dissipating for transistor 200 Heat.
Semiconductor heater according to the utility model embodiment is described below.According to the half of the utility model embodiment Conductor heating unit includes the radiating subassembly 1 of the semiconductor heater according to the utility model above-described embodiment.
According to the semiconductor heater of the utility model embodiment, by using according to the utility model above-described embodiment Semiconductor heater radiating subassembly 1, have many advantages, such as heat dissipation uniformly, good heat dissipation effect.
Semiconductor cooking apparatus according to the utility model embodiment is described below.According to the half of the utility model embodiment Conductor cooking apparatus includes the semiconductor heater according to the utility model above-described embodiment.
Specifically, semiconductor cooking apparatus can be semiconductor microwave oven or semiconductor steaming oven etc..
According to the semiconductor cooking apparatus of the utility model embodiment, by using according to the utility model above-described embodiment Semiconductor heater, have many advantages, such as heat dissipation uniformly, good heat dissipation effect.
It is common for this field according to other compositions of the semiconductor cooking apparatus of the utility model embodiment and operation All it is known for technical staff, is not detailed herein.
In the description of the utility model, it is to be understood that term " " center ", " longitudinal direction ", " transverse direction ", " length ", " width Degree ", " thickness ", " on ", " under ", "front", "rear", "left", "right", " vertical ", " level ", " top ", " bottom " " interior ", " outer ", " suitable The orientation or position relationship of the instructions such as hour hands ", " counterclockwise ", " axial direction ", " radial direction ", " circumferential direction " are based on orientation shown in the drawings Or position relationship, be for only for ease of description the utility model and simplify description rather than instruction or imply signified device or Element must have specific orientation, with specific azimuth configuration and operation, therefore it is not intended that limit to the utility model System.In addition, define " first ", one or more this feature can be expressed or be implicitly included to the feature of " second ". In the description of the utility model, unless otherwise indicated, " multiple " are meant that two or more.
, it is necessary to which explanation, unless otherwise clearly defined and limited, term " are pacified in the description of the utility model Dress ", " connected ", " connection " should be interpreted broadly, for example, it may be being fixedly connected or being detachably connected or integrally Connection;Can be mechanical connection or electrical connection;It can be directly connected, can also be indirectly connected by intermediary, It can be the connection inside two elements.For the ordinary skill in the art, can above-mentioned art be understood with concrete condition Concrete meaning of the language in the utility model.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " illustrative examples ", The description of " example ", " specific example " or " some examples " etc. means to combine specific features, the knot that the embodiment or example describe Structure, material or feature are contained at least one embodiment or example of the utility model.In the present specification, to above-mentioned art The schematic representation of language may not refer to the same embodiment or example.Moreover, description specific features, structure, material or Person's feature can in an appropriate manner combine in any one or more embodiments or example.
While there has been shown and described that the embodiment of the utility model, it will be understood by those skilled in the art that: In the case where not departing from the principle and objective of the utility model can these embodiments be carried out with a variety of variations, modification, replaced And modification, the scope of the utility model are limited by claim and its equivalent.

Claims (15)

1. a kind of radiating subassembly of semiconductor heater, which is characterized in that including:
Heat-radiating substrate;
Transistor, the transistor are located on the heat-radiating substrate;
Heat conducting pipe, the heat conducting pipe have a first end and a second end, and the second end is located on the heat-radiating substrate and neighbouring institute Transistor setting is stated, the first end stretches out the outer edge of the heat-radiating substrate;
First fin component, first fin component is located in the first end and formation first in first fin component Air passage;
Second fin component, second fin component are located on the heat-radiating substrate and are limited jointly with the heat-radiating substrate Second air passage;
First wind turbine, first wind turbine are located in first air passage;
Second wind turbine, second wind turbine are located in second air passage.
2. the radiating subassembly of semiconductor heater according to claim 1, which is characterized in that pcb board is further included, it is described Second end and the pcb board are respectively provided on two opposite surfaces of the heat-radiating substrate, the transistor and the pcb board It is connected.
3. the radiating subassembly of semiconductor heater according to claim 1, which is characterized in that set on the heat-radiating substrate There is the air passage slot formed by machining, the air passage slot is extended in the middle part of the heat-radiating substrate away from the heat conducting pipe A side edge, second fin component cooperation limits jointly in the air passage slot and with the inner surface of the air passage slot Second air passage.
4. the radiating subassembly of semiconductor heater according to claim 1, which is characterized in that set on the heat-radiating substrate Have a multiple radiation tooths formed by machining, second fin component be located at the radiation tooth and with the radiation tooth Second air passage is limited jointly.
5. the radiating subassembly of semiconductor heater according to claim 1, which is characterized in that first fin component Including:
First fin cover board is formed with the first air passage in the first fin cover board;
Multiple first fins, multiple first fins be located in first air passage and each first fin respectively with institute Heat conducting pipe is stated with the first fin cover board to be connected.
6. the radiating subassembly of semiconductor heater according to claim 1, which is characterized in that second fin component Including:
Second fin cover board, the second fin cover board are located on the heat-radiating substrate and are limited jointly with the heat-radiating substrate Second air passage,
Multiple second fins, multiple second fins be located in second air passage and each second fin respectively with institute Heat-radiating substrate is stated with the second fin cover board to be connected.
7. the radiating subassembly of semiconductor heater according to claim 1, which is characterized in that set on the heat-radiating substrate There is tube seat, the second end of the heat conducting pipe coordinates in the tube seat.
8. the radiating subassembly of semiconductor heater according to claim 7, which is characterized in that the appearance of the heat conducting pipe Solder(ing) paste is coated between the inner surface of face and the tube seat.
9. the radiating subassembly of semiconductor heater according to claim 1, which is characterized in that the heat conducting pipe is multiple And the air supply direction along second air passage is alternatively arranged.
10. the radiating subassembly of semiconductor heater according to claim 9, which is characterized in that first air passage Air supply direction and the air supply direction in second air passage are parallel and vertical with the length direction of the heat conducting pipe.
11. the radiating subassembly of semiconductor heater according to claim 2, which is characterized in that the heat-radiating substrate is Copper plate and equipped with for weld the pcb board wire casing, for welding the tube seat of the heat conducting pipe and crystal tube seat.
12. the radiating subassembly of semiconductor heater according to claim 2, which is characterized in that the heat-radiating substrate is Aluminium sheet and equipped with for weld the pcb board wire casing, for welding the tube seat of the heat conducting pipe and crystal tube seat, the line Nickel plating or silver-plated process in slot, the tube seat and the crystal tube seat.
13. the radiating subassembly of semiconductor heater according to claim 1, which is characterized in that the heat-radiating substrate is The aluminium sheet of red copper block is embedded with, the heat conducting pipe is connected with the red copper block.
14. a kind of semiconductor heater, which is characterized in that including the semiconductor according to any one of claim 1-13 The radiating subassembly of heating unit.
15. a kind of semiconductor cooking apparatus, which is characterized in that including semiconductor heater according to claim 14.
CN201721646920.6U 2017-11-30 2017-11-30 Radiating subassembly, semiconductor heater and semiconductor cooking apparatus Active CN207441688U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201721646920.6U CN207441688U (en) 2017-11-30 2017-11-30 Radiating subassembly, semiconductor heater and semiconductor cooking apparatus

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Application Number Priority Date Filing Date Title
CN201721646920.6U CN207441688U (en) 2017-11-30 2017-11-30 Radiating subassembly, semiconductor heater and semiconductor cooking apparatus

Publications (1)

Publication Number Publication Date
CN207441688U true CN207441688U (en) 2018-06-01

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107785338A (en) * 2017-11-30 2018-03-09 广东美的厨房电器制造有限公司 Radiating subassembly, semiconductor heater and semiconductor cooking apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107785338A (en) * 2017-11-30 2018-03-09 广东美的厨房电器制造有限公司 Radiating subassembly, semiconductor heater and semiconductor cooking apparatus
CN107785338B (en) * 2017-11-30 2024-08-20 广东美的厨房电器制造有限公司 Heat radiation assembly, semiconductor heating device and semiconductor cooking utensil

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