CN207200669U - A kind of biasing circuit and power amplification circuit - Google Patents
A kind of biasing circuit and power amplification circuit Download PDFInfo
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- CN207200669U CN207200669U CN201720901345.3U CN201720901345U CN207200669U CN 207200669 U CN207200669 U CN 207200669U CN 201720901345 U CN201720901345 U CN 201720901345U CN 207200669 U CN207200669 U CN 207200669U
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Abstract
The utility model discloses a kind of biasing circuit, including tie point, the second branch road, current amplifier and switching switch；Wherein, the tie point, for by the first current distributing of input, and by the first branch current input power of first electric current；Second branch road, for inputting the current amplifier by the first current distributing of input, and by the second branch current of first electric current；The current amplifier, exported for receiving the second branch current of first electric current, and using after the second branch current amplification of first electric current as the bias current for the power amplifier being connected with the biasing circuit；The switching switch, for switching different resistances for the resistance in the tie point, and/or, it is that the resistance in second branch road switches different resistances.The invention also discloses a kind of power amplification circuit.
Description
Technical Field
The utility model relates to the field of electronic technology, especially, relate to a biasing circuit and power amplification circuit.
Background
When The multi-band multi-mode rf power amplifier amplifies rf signals in The second Generation (2 nd Generation, 2G), The third Generation (3 rd Generation, 2G) or The fourth Generation (4 th Generation, 4G) mobile communication technologies, The power amplifier needs to operate in different states. The power amplifier working in the 2G mode needs larger bias current so as to enable the power amplifier to work in the class A power amplifier mode, and therefore better output power and linearity are obtained; the power amplifiers working in the 3G and 4G modes need smaller bias current so that the power amplifiers work in class AB power amplifier modes, and better efficiency and linearity compatibility are obtained. That is, the bias currents of the power amplifiers compatible with the different modes such as 2G, 3G, and 4G are different when the power amplifiers have better performance in the different modes such as 2G, 3G, and 4G.
As shown in fig. 1, currently, a fixed bias circuit is usually used to provide base bias current for power amplifiers compatible with different modes such as 2G, 3G and 4G. The fixed bias circuit is fixed relative to the radio frequency impedance of the base of the power amplifier so that the base current supplied to the power amplifier is fixed. Therefore, power amplifiers compatible with different modes, such as 2G, 3G, and 4G, can achieve optimal performance in only one mode.
SUMMERY OF THE UTILITY MODEL
In view of this, the embodiment of the present invention provides a bias circuit and a power amplifier circuit, so as to provide bias currents with different sizes for power amplifiers compatible with different modes such as 2G, 3G, and 4G, and improve the performance of the power amplifier circuit.
In order to achieve the above object, the embodiment of the present invention provides a technical solution that:
the embodiment of the utility model provides a bias circuit, this bias circuit includes:
a bias circuit, the bias circuit comprising: the circuit comprises a first branch circuit, a second branch circuit, a current amplifier and a change-over switch; wherein,
the first branch circuit is used for dividing an input first current and inputting a first branch current of the first current into a power ground;
the second branch circuit is used for branching an input first current and inputting a second branch current of the first current into the current amplifier;
the current amplifier is used for receiving the second branch current, amplifying the second branch current and outputting the amplified second branch current as the bias current of the power amplifier connected with the bias circuit;
the change-over switch is used for switching different resistance values for the resistors in the first branch circuit and/or switching different resistance values for the resistors in the second branch circuit.
In the above scheme, the current amplifier includes a transistor, a collector of the transistor is connected to a power supply anode of the dc power supply, and the transistor is configured to amplify the received second branch current and output the amplified second branch current as a bias current of the power amplifier connected to the bias circuit.
In the above solution, the first branch includes a first resistor;
the change-over switch is connected in parallel with the first resistor, or the second branch circuit comprises a second resistor, and the change-over switch is connected in parallel with the second resistor.
In the above scheme, the first branch includes a first resistor, and the second branch includes a second resistor;
the change-over switch comprises a first sub-switch and a second sub-switch, the first sub-switch is connected with the first resistor in parallel, and the second sub-switch is connected with the second resistor in parallel.
In the above-described aspect, the emitter of the transistor is connected to the base of the power amplifier of the power amplification circuit through the third resistor.
In the above solution, the first branch includes at least one diode connected in series in the forward direction along the first branch current direction.
In the above scheme, the switch is one of an HBT, a MOSFET, or a HEMT.
In the above scheme, the shunt point at which the first branch and the second branch are connected is connected to the power ground through a first capacitor.
In the above scheme, the diode is connected between the first resistor and the power ground, or the first resistor is connected between the diode and the power ground.
The embodiment of the utility model provides a power amplification circuit is still provided, power amplification circuit includes power amplifier and the bias circuit among the above-mentioned technical scheme; wherein,
the bias circuit is connected with the power amplifier and used for inputting bias current to the power amplifier;
and the power amplifier is used for correspondingly amplifying the input radio frequency signal according to the bias current and then outputting the amplified radio frequency signal.
The embodiment of the utility model provides a bias circuit and power amplification circuit, bias circuit include current amplifier, change over switch and be used for the first branch road and the second branch road of the first electric current reposition of redundant personnel of input; the current amplifier receives the second branch current of the first current, amplifies the second branch current and outputs the amplified second branch current as the bias current of the power amplifier connected with the bias circuit; the change-over switch switches different resistance values for the resistors in the first branch circuit or the second branch circuit. When the scheme is adopted, the resistance value of the resistor in the first branch or the second branch can be changed by switching on and off the change-over switch, so that the radio frequency impedance of the bias circuit relative to the base electrode of the power amplifier is changed, the bias current provided by the bias circuit to the power amplifier is changed, and the performance of the power amplification circuit is improved.
Drawings
Fig. 1 is a schematic diagram of a circuit configuration of a power amplifier circuit in the prior art;
fig. 2 is a schematic diagram of a circuit structure of a power amplifier circuit according to an embodiment of the present invention;
fig. 3 is a schematic diagram of a circuit structure of a second power amplifier circuit according to an embodiment of the present invention;
fig. 4 is a schematic diagram of a circuit structure of a three-power amplifying circuit according to an embodiment of the present invention;
fig. 5 is a schematic diagram of a circuit configuration of a four-power amplifying circuit according to an embodiment of the present invention.
Detailed Description
In an embodiment of the present invention, the bias circuit includes a first branch, a second branch, a current amplifier, and a switch; the first branch circuit is used for dividing the input first current and inputting the first branch current of the first current into a power ground; the second branch circuit is used for shunting the input first current and inputting the second branch current of the first current into the current amplifier; the current amplifier is used for receiving the second branch current of the first current, amplifying the second branch current of the first current and outputting the amplified second branch current as the bias current of the power amplifier connected with the bias circuit; and the change-over switch is used for switching over different resistance values for the resistor in the first branch circuit and/or switching over different resistance values for the resistor in the second branch circuit.
Therefore, when the change-over switch is in different opening and closing states, the resistance values of the first branch circuit or the second branch circuit are different, the radio frequency impedances of the bias circuit relative to the base electrode of the power amplifier are different, and the bias current provided by the bias circuit to the power amplifier is also different, so that the control of the bias current of the power amplifier is effectively and flexibly realized, and the power amplifier compatible with different modes such as 2G, 3G, 4G and the like has better performance in different modes such as 2G, 3G, 4G and the like.
Furthermore, adopt the embodiment of the utility model provides a bias circuit can make radio frequency signal different at the impedance of base, under 3G and 4G's broadband modulation signal, when bias circuit's modulation signal's impedance is less, is favorable to reducing the memory effect of circuit, makes under the different mode states, and the radio frequency performance can both reach the best.
In order to understand the features and technical contents of the present invention in more detail, the following description is given in conjunction with the accompanying drawings, which are only used for reference and not for limiting the present invention.
Example one
Fig. 2 is the schematic circuit structure diagram of the bias circuit in the embodiment of the present invention, as shown in fig. 2, the embodiment of the present invention provides a bias circuit in which the first branch and the second branch are connected to the shunt point a. The first branch and the second branch split a current Ib provided by the current source into a first branch current Ib1 and a second branch current Ib 2. The shunt point a of the first branch and the second branch is connected to the power ground through a first capacitor C1, and the C1 is used for providing the rf reference ground for the input bias.
The first branch comprises two diodes D1 and D2 connected in series in the forward direction along the first branch current Ib1 and a first resistor R1, the first resistor R1 being connected between the diodes D1 and D2 and the power ground. The first branch current Ib1 is fed to the supply ground via the first branch. The two ends of the first resistor R1 are connected in parallel with a switch S1. The switch S1 can be implemented by a power device such as HBT, MOSFET or HEMT.
The second branch current Ib2 is input to the base of the transistor T1 with current amplification through the second branch. The collector of the transistor T1 is connected to the positive power supply terminal of the dc power supply VBAT, and the transistor T1 is configured to amplify the second branch current Ib2 received at the base of the transistor T1, and then output as a bias current of the power amplifier M1 connected to the bias circuit from the emitter of the transistor T1.
As shown in fig. 2, the emitter of the transistor is connected to the base of the power amplifier of the power amplification circuit via a third resistor R3.
in the bias circuit provided by the embodiment of the present invention, the current provided by the current source Ib is divided into two parts, Ib1 and Ib2, Ib2 amplifies the current to Ib2 β 1 through the transistor T1 and then outputs the amplified current to the base of the power amplifier M1 through the rf resistor RFballast, and the base bias current Ibase provided for the power amplifier M1 is Ib2 β 1. in the case that the parameters of the transistor T1 and the diode D1 and D2 are fixed, the size ratio of Ib1 and Ib2 after the node a is shunted is determined by the resistors R1, R3 and RFballast.
The resistance value of the R1 can be changed by switching the switch S1, and the size of the Ib2 is changed, so that the bias current of the power amplifier M1 can be controlled. Specifically, under the condition that the parameters of R3 and RFballast are both fixed, when S1 is turned off, the resistance value of the first branch is R1, and Ib2 is at the maximum at this time, so that a bias current can be provided for the power amplifier in the 2G mode; when S1 is closed, the resistance of the first branch is 0, and Ib2 is the minimum, so that bias current can be provided to the power amplifier in 3G and 4G modes.
In addition, when the S1 is turned on or off, the impedance at the point a may be different, so that in different modes, the impedance of the radio frequency signal at the base is different, and in 3G and 4G broadband modulation signals, the modulation signal impedance of the bias circuit is lower, which is beneficial to reducing the memory effect of the circuit.
The embodiment of the utility model provides a bias circuit, bias circuit include current amplifier, change over switch and be used for the first branch road and the second branch road of the first electric current reposition of redundant personnel of input; the current amplifier receives the second branch current of the first current, amplifies the second branch current and outputs the amplified second branch current as the bias current of the power amplifier connected with the bias circuit; the change-over switch switches different resistance values for the resistors in the first branch circuit or the second branch circuit. When the scheme is adopted, the resistance value of the resistor in the first branch or the second branch can be changed by switching on and off the change-over switch, so that the radio frequency impedance of the bias circuit relative to the base electrode of the power amplifier is changed, the bias current provided by the bias circuit to the power amplifier is changed, and the performance of the power amplification circuit is improved.
Example two
The embodiment of the present invention is similar to the first embodiment, except that, as shown in fig. 3, in the embodiment of the present invention, the diodes D1 and D2 are connected between the first resistor R1 and the power ground.
The same as the first embodiment, the embodiment of the present invention provides a bias circuit that can also provide bias currents with different sizes for power amplifiers compatible with different modes such as 2G, 3G, and 4G, and improve the performance of the power amplifier circuit.
EXAMPLE III
Fig. 4 is a schematic diagram of a circuit composition structure of the bias circuit in the embodiment of the present invention, as shown in fig. 4, an embodiment of the present invention provides a bias circuit in which a first branch and a second branch are connected to a shunt point a. The first branch and the second branch split a current Ib provided by the current source into a first branch current Ib1 and a second branch current Ib 2. The shunt point a of the first branch and the second branch is connected to the power ground through a first capacitor C1, and the C1 is used for providing the rf reference ground for the input bias.
The first branch comprises two diodes D1 and D2 connected in series in the forward direction along the first branch current Ib1 and a first resistor R1, the first resistor R1 being connected between the diodes D1 and D2 and the power ground. The first branch current Ib1 is fed to the supply ground via the first branch.
The second branch comprises a second resistor R2, and a switch S2 is connected in parallel across the second resistor R2. The switch S2 can be implemented by a power device such as HBT, MOSFET or HEMT.
The second branch current Ib2 is input to the base of the transistor T1 with current amplification through the second branch. The collector of the transistor T1 is connected to the positive power supply terminal of the dc power supply VBAT, and the transistor T1 is configured to amplify the second branch current Ib2 received at the base of the transistor T1, and then output as a bias current of the power amplifier M1 connected to the bias circuit from the emitter of the transistor T1.
As shown in fig. 4, the emitter of the transistor is connected to the base of the power amplifier of the power amplification circuit via a third resistor R3.
in the bias circuit provided by the embodiment of the present invention, the current provided by the current source Ib is divided into two parts, Ib1 and Ib2, Ib2 amplifies the current to Ib2 × β 1 through the transistor T1 and then outputs the amplified current to the base of the power amplifier M1 through the rf resistor RFballast, and the base bias current Ibase provided for the power amplifier M1 is Ib2 × β 1, in the case that the parameters of the transistor T1 and the diodes D1 and D2 are fixed, the size ratio of Ib1 and Ib2 after the node a is shunted is determined by the resistors R1, R2, R3 and rfballst, R1 is smaller, R2, R3 or RFballast is larger, Ib1 is larger, Ib2 is smaller, R1 is larger, R1 is smaller, and R1 is larger.
The resistance value of the R2 can be changed by switching the switch S2, and the size of the Ib2 is changed, so that the bias current of the power amplifier M1 can be controlled. Specifically, in the case that parameters of R1, R3, and RFballast are all fixed, when S2 is closed, the resistance value of the second branch is 0, and Ib2 is at the maximum at this time, so that a bias current can be provided for the power amplifier in the 2G mode; when S2 is turned off, the resistance of the second branch is R2, and Ib2 is the minimum, so that bias current can be supplied to the power amplifier in 3G and 4G modes.
In addition, when the S2 is turned on or off, the impedance at the point a may be different, so that in different modes, the impedance of the radio frequency signal at the base is different, and in 3G and 4G broadband modulation signals, the modulation signal impedance of the bias circuit is lower, which is beneficial to reducing the memory effect of the circuit.
The same as the first embodiment, the embodiment of the present invention provides a bias circuit that can also provide bias currents with different sizes for power amplifiers compatible with different modes such as 2G, 3G, and 4G, and improve the performance of the power amplifier circuit.
Example four
Fig. 5 is a schematic diagram of a circuit composition structure of the bias circuit in the embodiment of the present invention, as shown in fig. 5, an embodiment of the present invention provides a bias circuit in which a first branch and a second branch are connected to a shunt point a. The first branch and the second branch split a current Ib provided by the current source into a first branch current Ib1 and a second branch current Ib 2. The shunt point a of the first branch and the second branch is connected to the power ground through a first capacitor C1, and the C1 is used for providing the rf reference ground for the input bias.
The first branch comprises two diodes D1 and D2 connected in series in the forward direction along the first branch current Ib1 and a first resistor R1, the first resistor R1 being connected between the diodes D1 and D2 and the power ground. The first branch current Ib1 is fed to the supply ground via the first branch. The first sub-switch S1 is connected in parallel across the first resistor R1. The first sub-switch S1 can be implemented by a power device such as HBT, MOSFET or HEMT.
The second branch circuit comprises a second resistor R2, and a second sub-switch S2 is connected in parallel across the second resistor R2. The second sub-switch S2 can be implemented by a power device such as HBT, MOSFET or HEMT.
The second branch current Ib2 is input to the base of the transistor T1 with current amplification through the second branch. The collector of the transistor T1 is connected to the positive power supply terminal of the dc power supply VBAT, and the transistor T1 is configured to amplify the second branch current Ib2 received at the base of the transistor T1, and then output as a bias current of the power amplifier M1 connected to the bias circuit from the emitter of the transistor T1.
As shown in fig. 5, the emitter of the transistor is connected to the base of the power amplifier of the power amplification circuit via a third resistor R3.
in the bias circuit provided by the embodiment of the present invention, the current provided by the current source Ib is divided into two parts, Ib1 and Ib2, Ib2 amplifies the current to Ib2 × β 1 through the transistor T1 and then outputs the amplified current to the base of the power amplifier M1 through the rf resistor RFballast, and the base bias current Ibase provided for the power amplifier M1 is Ib2 × β 1, in the case that the parameters of the transistor T1 and the diodes D1 and D2 are fixed, the size ratio of Ib1 and Ib2 after the node a is shunted is determined by the resistors R1, R2, R3 and rfballst, R1 is smaller, R2, R3 or RFballast is larger, Ib1 is larger, Ib2 is smaller, R1 is larger, R1 is smaller, and R1 is larger.
The resistance values of R1 and R2, and hence the magnitude of Ib2, can be changed by switching the first sub-switch S1 and the second sub-switch S2, so as to control the bias current of the power amplifier M1. Specifically, in the case that parameters of R1, R2, R3 and RFballast are all fixed, when the first sub-switch S1 is open and the second sub-switch S2 is closed, the resistance value of the first branch is R1, the resistance value of the second branch is 0, and at this time Ib2 is maximum, so that a bias current can be provided for the power amplifier in the 2G mode; when the first sub-switch S1 is closed and the second sub-switch S2 is open, the resistance of the first branch is 0, the resistance of the second branch is R2, and Ib2 is the minimum, so that bias current can be provided to the power amplifier in 3G and 4G modes.
In addition, when the first sub-switch S1 and the second sub-switch S2 are opened and closed, the impedance at the point a is different, so that the impedance of the radio frequency signal at the base is different in different modes, and the modulation signal impedance of the bias circuit is lower in the case of 3G and 4G broadband modulation signals, which is beneficial to reducing the memory effect of the circuit.
The same as the first embodiment, the embodiment of the present invention provides a bias circuit that can also provide bias currents with different sizes for power amplifiers compatible with different modes such as 2G, 3G, and 4G, and improve the performance of the power amplifier circuit.
EXAMPLE five
The embodiment of the utility model provides a power amplification circuit, power amplification circuit includes power amplifier and bias circuit; wherein,
the bias circuit is connected with the power amplifier and is used for inputting bias current to the power amplifier;
and the power amplifier is used for correspondingly amplifying the input radio frequency signal according to the bias current and then outputting the amplified radio frequency signal.
Here, the bias circuit may adopt the composition and function of the bias circuit described in the above technical solutions, such as: a biasing circuit as shown in fig. 2 may be employed, specifically:
as shown in fig. 2, the first branch and the second branch of the bias circuit are connected to a shunt point a. The first branch and the second branch split a current Ib provided by the current source into a first branch current Ib1 and a second branch current Ib 2.
The first branch comprises two diodes D1 and D2 connected in series in the forward direction along the first branch current Ib1 and a first resistor R1. The first branch current Ib1 is fed to the supply ground via the first branch. The two ends of the first resistor R1 are connected in parallel with a switch S1.
The second branch current Ib2 is input to the base of the transistor T1 with current amplification through the second branch. The collector of the transistor T1 is connected to the positive power supply terminal of the dc power supply VBAT, and the transistor T1 is configured to amplify the second branch current Ib2 received at the base of the transistor T1, and then output as a bias current of the power amplifier M1 connected to the bias circuit from the emitter of the transistor T1.
The embodiment of the utility model provides a bias circuit in power amplification circuit includes current amplifier, change over switch and is used for the first branch road and the second branch road of reposition of redundant personnel of the first electric current of input; the current amplifier receives the second branch current of the first current, amplifies the second branch current and outputs the amplified second branch current as the bias current of the power amplifier connected with the bias circuit; the change-over switch switches different resistance values for the resistors in the first branch circuit or the second branch circuit. When the scheme is adopted, the resistance value of the resistor in the first branch or the second branch can be changed by switching on and off the change-over switch, so that the radio frequency impedance of the bias circuit relative to the base electrode of the power amplifier is changed, the bias current provided by the bias circuit to the power amplifier is changed, and the performance of the power amplification circuit is improved.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention.
Claims (10)
1. A bias circuit, comprising: the circuit comprises a first branch circuit, a second branch circuit, a current amplifier and a change-over switch; wherein,
the first branch circuit is used for dividing an input first current and inputting a first branch current of the first current into a power ground;
the second branch circuit is used for branching an input first current and inputting a second branch current of the first current into the current amplifier;
the current amplifier is used for receiving the second branch current, amplifying the second branch current and outputting the amplified second branch current as the bias current of the power amplifier connected with the bias circuit;
the change-over switch is used for switching different resistance values for the resistors in the first branch circuit and/or switching different resistance values for the resistors in the second branch circuit.
2. The bias circuit of claim 1, wherein the current amplifier comprises a transistor, a collector of the transistor is connected to a positive power supply terminal of the dc power supply, and the transistor is configured to amplify the received second branch current and output the amplified second branch current as a bias current of a power amplifier connected to the bias circuit.
3. The bias circuit according to claim 1 or 2, wherein the first branch comprises a first resistor;
the change-over switch is connected in parallel with the first resistor, or the second branch circuit comprises a second resistor, and the change-over switch is connected in parallel with the second resistor.
4. The bias circuit of claim 1 or 2, wherein the first branch comprises a first resistance and the second branch comprises a second resistance;
the change-over switch comprises a first sub-switch and a second sub-switch, the first sub-switch is connected with the first resistor in parallel, and the second sub-switch is connected with the second resistor in parallel.
5. The bias circuit of claim 2, wherein the emitter of the transistor is connected to the base of the power amplifier of the power amplification circuit through a third resistor.
6. The biasing circuit of any one of claims 1, 2 or 5, wherein the first branch comprises at least one diode connected in series in a forward direction along the first branch current direction.
7. The bias circuit of any of claims 1, 2 or 5, wherein the switch is one of an HBT, a MOSFET, or a HEMT.
8. The bias circuit of claim 6, wherein a shunt point at which the first branch is connected to the second branch is connected to the power ground via a first capacitor.
9. The bias circuit of claim 6, wherein the diode is connected between the first resistor and the power ground, or wherein the first resistor is connected between the diode and the power ground.
10. A power amplification circuit, wherein the power amplification circuit comprises a power amplifier and the bias circuit of any one of claims 1 to 9; wherein,
the bias circuit is connected with the power amplifier and used for inputting bias current to the power amplifier;
and the power amplifier is used for correspondingly amplifying the input radio frequency signal according to the bias current and then outputting the amplified radio frequency signal.
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| CN201720901345.3U CN207200669U (en) | 2017-07-24 | 2017-07-24 | A kind of biasing circuit and power amplification circuit |
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| CN201720901345.3U CN207200669U (en) | 2017-07-24 | 2017-07-24 | A kind of biasing circuit and power amplification circuit |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111200407A (en) * | 2020-01-19 | 2020-05-26 | 广州慧智微电子有限公司 | Signal amplification circuit and active bias circuit |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111200407A (en) * | 2020-01-19 | 2020-05-26 | 广州慧智微电子有限公司 | Signal amplification circuit and active bias circuit |
| CN111200407B (en) * | 2020-01-19 | 2023-05-02 | 广州慧智微电子股份有限公司 | Signal amplifying circuit and active bias circuit |
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