CN206758422U - Sensor with sacrificial anode - Google Patents
Sensor with sacrificial anode Download PDFInfo
- Publication number
- CN206758422U CN206758422U CN201590000777.6U CN201590000777U CN206758422U CN 206758422 U CN206758422 U CN 206758422U CN 201590000777 U CN201590000777 U CN 201590000777U CN 206758422 U CN206758422 U CN 206758422U
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- China
- Prior art keywords
- sensor
- lead frame
- contact layer
- intermediate layer
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000001514 detection method Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 19
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 84
- 230000001133 acceleration Effects 0.000 description 17
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 9
- 239000007788 liquid Substances 0.000 description 9
- 238000005259 measurement Methods 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 229910052717 sulfur Inorganic materials 0.000 description 4
- 239000011593 sulfur Substances 0.000 description 4
- 239000005864 Sulphur Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000004512 die casting Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L23/495—Lead-frames or other flat leads
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- G01—MEASURING; TESTING
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- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
- H01L2924/143—Digital devices
- H01L2924/1433—Application-specific integrated circuit [ASIC]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
A kind of sensor (14) for being used to detect physics sensing field (32,38) related to physical parameter (16) to be measured is the utility model is related to, including:Lead frame (48) with assembling island (58),Interface (54) and at least one wire (62) that assembling island (58) is passed to from interface (54),The sensor circuit (46) on the assembling island (58) of lead frame (48) is supported on for detection sensor field (32,38) and for passing through interface (54) output and sensors field (32,38) related sensor signal (26,28),And the connecting line (50) for making sensor circuit (46) be contacted with the wire (62) of lead frame (48),The contact layer (56) electrically connected with the wire (62) of lead frame (48),The contact layer is used to connecting line (50) be electrically connected with lead frame (48),And it is supported on the intermediate layer (64) on the wire (62) of lead frame (48),From the wire (62) of lead frame (48),Contact layer (56) is supported on the intermediate layer,Wherein intermediate layer (64) have an electronegativity,The electronegativity is more than the electronegativity of contact layer (56) and lead frame (48).
Description
Technical field
It the utility model is related to a kind of sensor for being used to detect the physics sensing field related to physical parameter to be measured.
Background technology
A kind of sensor with sensor circuit there is known by the A1 of WO 2010/037810, the sensor circuit is set
It is set to, the output sensor related with physical parameter to be measured in field is sensed by the physics related to physical parameter to be measured
Signal.
Utility model content
Task of the present utility model is, improves this sensor.
The task is completed by a kind of sensor for being used to detect the physics sensing field related to physical parameter to be measured,
It includes:Lead frame, interface and at least one wire that assembling island is passed to from interface with assembling island, are supported on lead frame
Sensor circuit on the assembling island of frame is for detection physics sensing field and for sensing field with physics by interface output
Related sensor signal, the connecting line of the conductive contact for making sensor circuit and lead frame, with leading for lead frame
The contact layer of line electrical connection, the contact layer are used to connecting line be electrically connected with lead frame, are supported on the wire of lead frame
On intermediate layer, from the wire of lead frame, contact layer is supported on the intermediate layer, wherein, the electronegativity in intermediate layer
More than the electronegativity of contact layer and lead frame.
According to one side of the present utility model, the physics related to physical parameter to be measured for detection sensing field/
The sensor of sensor region/transmitter field (Geberfeld) includes:Lead frame, interface and at least one with assembling island
The individual wire that assembling island is passed to from interface, the sensor circuit on the assembling island of lead frame is supported on for detection sensor
And for exporting the sensor signal related to sensors field by interface, and for making sensor circuit and lead
The connecting line of the conductive contact of framework, the contact layer electrically connected with the wire of lead frame, the contact layer are used for connecting line
Electrically connected with lead frame, and the intermediate layer being supported on the wire of lead frame, from the wire of lead frame, contact
Layer is supported on the intermediate layer, wherein, the electronegativity in intermediate layer is more than the electronegativity of contact layer and lead frame.
The sensor is based on such design:Sensor circuit is electrically connected in the connecting line by being used as connecting element extremely
During the wire of lead frame, in order to ensure the sufficiently high mechanical strength of connecting line on the lead frames, contact layer be it is required,
So that connecting line is then no longer come off from lead frame and the electrical connection between interrupt sensors circuit and wire.
Here, lead frame should be designed as pair expected carrying capacity of environment determined, such as the liquid of pollution or gas are
It is resistive.Therefore, for instance it can be possible that it is necessary that leadframe design is relative to by the liquid of sulphur pollution in vehicle
Or for gas it is stable.However, this have the disadvantage that the electronegativity of lead frame can not be designed as completely with contacting
Layer is unrelated.Therefore, when the moisture by sulphur pollution of intrusion sensor damages due to being converted into sulfide or other sulphur compounds
Contact layer, afterwards this can cause the failure of sensor because interrupted it is mechanical between connecting line and the wire of lead frame
With so also have electricity contact.
Here, the sensor is also considered based on such:Contact layer by form for intermediate layer sacrificial anode layer with
Lead frame is decoupled.Cause that the chemical characteristic of contact layer is unrelated with the material of lead frame using the sacrificial anode layer.The sacrifice
Anode layer has maximum electronegativity and the humidity corrosion being therefore broken into first in composite construction.Contact layer is for a long time
Keep constant, thus the service life of sensor can be obviously prolonged.
The electronegativity of contact layer can be selected completely freely, that is, might be less that the electronegativity of lead frame.
In a kind of special expansion scheme, the sensor includes wrapping up intermediate layer and contact layer at least on wire
Protection materials.The protection materials should protect the sensor from environment influence, such as above-mentioned moisture.Such as due to temperature change
And/or mechanical overload can cause between protection materials and lead frame caused by the tension meeting on the wire of lead frame
The interruption of connection, so as to form gap between lead frame and protection materials, for the liquid mentioned before, the gap court
Expose contact plug outside.But the intermediate layer worked as sacrificial anode protects contact layer and ensures that the contact layer has enough
Long service life.
There should be surface as big as possible at least in a region at this as the intermediate layer that sacrificial anode works,
There is the invader in most probable in the region.Therefore, in a special expansion scheme of the sensor, intermediate layer is extremely
Partially it is projected into before contact layer, to ensure intermediate layer surface as big as possible.
In preferable expansion scheme, observed along the section between intermediate layer and contact layer, alternatively or additionally
Ground, intermediate layer can be designed as plane, at least just big as contact layer.It is ensured that actually invading first
Humidity corrosion contact layer before, humidity corrosion that intermediate layer is broken into.
But in special preferable expansion scheme, observed along the section between intermediate layer and contact layer, intermediate layer
Should plane earth be designed as it is bigger than contact layer because correspondingly big sacrifice layer area provide increase reaction surface and and then
Provide the more preferable protection to contact layer.
In another expansion scheme of the sensor, observed perpendicular to the section between intermediate layer and contact layer,
Intermediate layer is designed as thinner than contact layer, and thus the sensor is configured to extremely save space.
It can be contact layer selection silver as material, be that lead frame selects copper alloy or Fe-Ni alloy and in
Interbed selects copper.
The sensor can be airbag for a vehicle acceleration transducer, and wheel speed sensor or inertia pass
Sensor.
According to other side of the present utility model, vehicle includes the sensor.
Brief description of the drawings
Cause above-mentioned characteristic of the present utility model, spy with reference to the description for the embodiment being specified to following connection with figures
Advantage of seeking peace and realize that these ways and means become apparent from and are easier to understand, wherein:
Fig. 1 schematically shows the vehicle with driving dynamics adjusting apparatus,
Fig. 2 schematically shows the inertial sensor in Fig. 1 vehicle,
The embodiment that Fig. 3 illustrates Fig. 2 inertial sensor with schematic sectional,
The inertial sensor for Fig. 3 that Fig. 4 is gone out on printed circuit board (PCB) with schematic side illustration, and
Fig. 5 shows a part for Fig. 3 inertial sensor.
Embodiment
Identical technology element has identical reference and only described once in accompanying drawing.
With reference to figure 1, it schematically shows the vehicle 2 with driving dynamics adjusting apparatus known per se.Such as from DE 10
2011 080 789 A1 can obtain the details on the driving dynamics adjusting apparatus.
Vehicle 2 includes chassis 4 and four wheels 6.Each wheel 6 can be fixedly secured on chassis 4 by position
Brake 8 slows down relative to chassis 4, to slow down motion of the vehicle 2 on not specifically illustrated road.
Here, can occur in the manner known to persons skilled in the art, the wheel 6 of vehicle 2 lose the attachment of its road surface and
Vehicle 2 is even because control is insufficient or crosses control and leaves by for example by the predetermined track of steering wheel not shown further.
This is by control circuit known per se, as ABS (anti-lock braking system) and ESP (ESP) are avoided.
In this embodiment, vehicle 2 has the speed probe 10 on wheel 6, speed probe detection for this
The rotating speed 12 of wheel 6.In addition, vehicle 2 has inertial sensor 14, the inertial sensor detects the inertial data of vehicle 2, under
Referred to herein as driving dynamics data 16, its can for example include the pitch rate of vehicle 2, yaw-rate, deflection efficiency, transverse acceleration,
Longitudinal acceleration and/or vertical acceleration.
Based on the rotating speed 12 and driving dynamics data 16 detected, controller 18 can be with known to those skilled in the art
Mode determine that whether vehicle 2 slides on track is even deviateed and correspondingly with known per se from above-mentioned predetermined track
Controller output signal 20 is made a response to this.The controller output signal 20 can then be conditioned equipment 22 and use, so as to
Governor motion is manipulated by means of Regulate signal 24, such as brake 8, the brake is in a way known to sliding or from pre-
The deviation of fixed track is made a response.
Controller 18 can be for example built in the engine control system known per se of vehicle 2.Controller 10 and tune
Section equipment 22 may be designed in common control device and the alternatively built-in engine control system being previously mentioned.
In order to simplify subsequent explanation, it should it is assumed that inertial sensor 14 is detected and shown in fig. 2 in a manner of not limiting
As driving dynamics data 16, vehicle 2 is surrounded the transverse acceleration 26 and deflection efficiency 28 for vehicle gone out with the deflection efficiency
Its vertical axes rotates, because using the deflection efficiency in the framework for the stability program being generally previously mentioned.
Although the utility model is specifically described according to inertial sensor 14, but the utility model can also use any biography
Sensor, example speed probe 10 as mentioned.
The possible principle for inertial sensor 14 is then expanded on further according to Fig. 2 and 3.
In order to detect transverse acceleration 26, measured lateral acceleration sensor 30 is arranged in inertial sensor 14.It is horizontal
To acceleration analysis sensor 30 acting on for field, the centrifugation are sensed by form for the physics of centrifugal force field/centrifugal force region 32
Measured lateral acceleration sensor 30 is worked and vehicle 2 accelerated using transverse acceleration 26 to be detected in the field of force.Detection
To transverse acceleration 26 then export to signal processing circuit 34.
In order to detect deflection efficiency 28, Coriolis acceleration measurement sensor is arranged in inertial sensor 14
(Coriolisbeschleunigungsmessaufnehmer)36.The Coriolis acceleration measurement sensor 36 is by form
The effect of field is sensed for the physics of Coriolis 38.As the response to Coriolis 38, Coriolis acceleration
The output sensor signal 40 of measurement sensor 36, the sensor signal can still fall within Coriolis acceleration measurement when necessary
The analytical equipment 42 of sensor 36 is scaled deflection efficiency 28.One is described in the A1 of document DE 10 2,010 002 796 such as
What can detect the example of deflection efficiency 28 based on Coriolis 38, therefore herein in order to which concise should save is retouched to this
State.The deflection efficiency 28 detected is exported to signal processing circuit 34.
The transverse acceleration 26 and deflection efficiency 28 so detected can be post-processed in signal processing circuit 34,
For example to reduce noise band distance and to strengthen signal intensity.The transverse acceleration 26 and deflection efficiency 28 being processed as can be with defeated
Go out to interface 44, the signal that the interface then detects using two is launched to controller 18 as driving dynamics data 16.This connects
Mouth 44 for example can be based on PSI5- standards or CAN standards are built.
In the framework of the present embodiment, two measurement sensors 30,36 and signal processing circuit 34 form sensor electricity
Road 46, the sensor circuit are supported by and connected up on the circuit carrier of lead frame 48 is configured to.If necessary, in lead frame
The wiring for failing to realize on frame 48 can be realized by form for the electric lead of connecting line 50 herein.Interface 44 can be integrated in letter
In number process circuit 34 and it is designed as application specific integrated circuit, hereinafter referred to as ASIC34 (English:application-specific
integrated circuit)。
In addition, sensor circuit 46 can be by the mechanical decoupled material 51 that form is silicone material, also referred to as vault
(Globetop)-material 51 surrounds, and the decoupled material can be wrapped in the protection materials for being designed as die-casting material 52 jointly again
In 52, such as the thermosetting plastics that form is epoxy resin 52.
Finally, stretched out corresponding contact possibility from inertial sensor 14, as small supporting leg shown in figure 2 for
With the electrical contact of such as on-off circuit of controller 18, the on-off circuit as interface 54 be used for unshowned cable, plug or
The on-off circuit of higher level.
With reference to Figure 4 and 5, there is shown with the expansion scheme of inertial sensor 14.
In the framework of the embodiment, show that whole sensor circuit 46 is used as unique block, to simplify then
Description.
In the framework of the embodiment, on lead frame 48, the contact of sensor circuit 46 and connecting line 50 is led to
Contact layer 56 is crossed to carry out.The contact layer for example can be designed as being made from silver.If connecting line 50 is made of gold, silver-contact
Layer 56 ensure that the electrical and mechanical connection of the stabilization of connecting line 50 on lead frame 48.
Therefore, sensor circuit 46 can be maintained on silver-contact layer 56 by contacting the machinery of adhesive layer 58 and be connect by electricity
Touch.
In order to protect lead frame 48 and especially interface 54 is not influenceed by weather phenomenon and other extraneous factors, draw
Wire frame 48 should be made up of a kind of material, and the material is not influenceed by these extraneous factors.Rule of thumb, inertial sensor 14 exists
The influence of sulfur-containing liquid or gas is generally subjected to during in above-mentioned vehicle 2.Lead frame 48 must be able to resist these sulfur-bearing liquid
Body or gas and it should not be degenerated.Therefore, lead frame 48 is mainly made up of copper alloy or Fe-Ni alloy, and these alloys are not
Can be by the gas of sulfur-bearing and liquid corrosion.
But there is larger electronegativity relative to this alloy, the silver of contact layer 56, which results in the gas of sulfur-bearing and
Liquid makes the silver of contact layer 56 be converted into silver-colored sulfide or other sulphur compounds, has thus damaged connecting line 50 and lead frame
Electrical contact.This is especially caused when due to mechanical overload (such as due to temperature change or the tension acted on lead frame 48)
It can occur when interval 60 is produced when protection materials 52 are broken and between lead frame 48 and protection materials 52.In the gap 60
In, it can be extruded onto forward at link position 62 by the liquid of sulphur pollution, at the link position, connecting line 50 is in silver-contact layer
It is electrically contacted on 56.
In order to avoid such case, it suggested in the framework of the embodiment, in silver-contact layer 56 and lead frame 48
Between be provided with intermediate layer 64, the intermediate layer is corroded as sacrificial anode before silver-contact layer 56.Therefore, intermediate layer 64
Electronegativity have to be larger than the electronegativity of lead frame 48 and silver-contact layer 56.This in the framework of the material of the foregoing description by
This realizes that is, intermediate layer 64 is designed as layers of copper.Therefore, intermediate layer 64 makes lead frame 48 decoupled with silver-contact layer 56 and allowed
The chemical characteristic of lead frame matches with invading the contaminated gas and liquid of sensor, and need not consider silver-contact layer 56.
As shown in partial cross section Figure 66 in Fig. 4 in Figure 5, here, intermediate layer 64 should be relative to silver-contact
Layer 56 has extension 68, and intermediate layer 64 is stretched in the top view to silver-contact layer 56 from the silver-contact layer in its framework
Go out.The extension 68 can be designed as regional area, however its can also as being shown Fig. 5 completely about silver-
Contact layer 56 extends.Here, set parallel to the surface 70 in the intermediate layer 64 of the section 72 between silver-contact layer 56 and intermediate layer 64
The corresponding surface more than silver-contact layer 56 is calculated as, larger chemical reaction surface is thus provided, is designed as sacrificial anode
Intermediate layer 56 can work with the reaction surface one.Extension 68 herein should be at least with silver-contact layer layer be of uniform thickness
It is wide.
But on the other hand, the thickness degree 76 in intermediate layer 64 can be designed as the corresponding thickness degree than silver-contact layer 56
74 is thin.
Claims (10)
1. a kind of sensor (14) for being used to detect physics sensing field (32,38) related to physical parameter (16) to be measured,
Including:
- the lead frame (48), interface (54) and at least one passed to from interface (54) with assembling island (58) assembles island (58)
Wire (62),
- be supported on sensor circuit (46) on the assembling island (58) of lead frame (48) for detection physics sensing field (32,
38) and for exporting the sensor signal (26,28) related to physics sensing field (32,38) by interface (54),
- be used to make the connecting line (50) that sensor circuit (46) contacts with the wire (62) of lead frame (48),
- the contact layer (56) electrically connected with the wire (62) of lead frame (48), the contact layer be used for connecting line (50) and
Lead frame (48) electrically connects,
- the intermediate layer (64) being supported on the wire (62) of lead frame (48), from the wire (62) of lead frame (48),
Contact layer (56) is supported on the intermediate layer, wherein, the electronegativity of intermediate layer (64) is more than contact layer (56) and lead frame
(48) electronegativity.
2. sensor (14) according to claim 1, wherein, the electronegativity of contact layer (56) is less than lead frame (48)
Electronegativity.
3. sensor (14) according to claim 1 or 2, including the intermediate layer (64) being at least wrapped on wire and contact
The protection materials (52) of layer (56).
4. sensor (14) according to claim 1 or 2, wherein, intermediate layer (64) reach contact layer at least in part
(56) before.
5. sensor (14) according to claim 1 or 2, wherein, cuing open between intermediate layer (64) and contact layer (56)
Observed in face (72), intermediate layer (64) plane earth is designed at least as just equally big with contact layer (56).
6. sensor (14) according to claim 1 or 2, wherein, cuing open between intermediate layer (64) and contact layer (56)
Observed in face (72), intermediate layer (64) plane earth is designed as bigger than contact layer (56).
7. sensor (14) according to claim 1 or 2, wherein, between intermediate layer (64) and contact layer (56)
Section (72) observation, intermediate layer (64) are designed to thinner than contact layer (56).
8. sensor (14) according to claim 1 or 2, wherein, contact layer (56) is silver layer.
9. sensor (14) according to claim 1 or 2, wherein, lead frame (48) with copper alloy or iron-nickel by closing
The material of gold is made.
10. sensor (14) according to claim 1 or 2, wherein, intermediate layer (64) are layers of copper.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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DE102014213218.5A DE102014213218A1 (en) | 2014-07-08 | 2014-07-08 | Sensor with sacrificial anode |
DE102014213218.5 | 2014-07-08 | ||
PCT/EP2015/064415 WO2016005201A1 (en) | 2014-07-08 | 2015-06-25 | Sensor comprising a sacrificial anode |
Publications (1)
Publication Number | Publication Date |
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CN206758422U true CN206758422U (en) | 2017-12-15 |
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CN201590000777.6U Active CN206758422U (en) | 2014-07-08 | 2015-06-25 | Sensor with sacrificial anode |
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KR (1) | KR101930649B1 (en) |
CN (1) | CN206758422U (en) |
DE (1) | DE102014213218A1 (en) |
WO (1) | WO2016005201A1 (en) |
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CN106290985B (en) * | 2016-07-26 | 2019-04-12 | 广东合微集成电路技术有限公司 | A kind of condenser type compound sensor and its manufacturing method |
DE102019120051A1 (en) | 2019-07-24 | 2021-01-28 | Infineon Technologies Ag | Package with selective corrosion protection of an electrical connection structure |
FR3105399B1 (en) * | 2019-12-18 | 2022-02-04 | Beyond Your Motion | ELECTRONIC DEVICE COMPRISING AN INERTIAL UNIT |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS60147148A (en) * | 1984-01-10 | 1985-08-03 | Hitachi Cable Ltd | Lead frame for semiconductor device |
JPS60225456A (en) * | 1984-04-24 | 1985-11-09 | Hitachi Cable Ltd | Lead frame for semiconductor |
KR100266726B1 (en) * | 1995-09-29 | 2000-09-15 | 기타지마 요시토시 | Lead frame, method for partially plating lead frame with noble meta and semiconductor device formed by using the lead frame |
TW401634B (en) * | 1997-04-09 | 2000-08-11 | Sitron Prec Co Ltd | Lead frame and its manufacture method |
US6203931B1 (en) * | 1999-02-05 | 2001-03-20 | Industrial Technology Research Institute | Lead frame material and process for manufacturing the same |
KR100381302B1 (en) * | 1999-04-08 | 2003-04-26 | 신꼬오덴기 고교 가부시키가이샤 | Semiconductor device and manufacturing method thereof |
JP2007033079A (en) * | 2005-07-22 | 2007-02-08 | Advics:Kk | Multi-chip sensor |
JP2010019693A (en) * | 2008-07-10 | 2010-01-28 | Torex Semiconductor Ltd | Acceleration sensor device |
DE102008064046A1 (en) | 2008-10-02 | 2010-04-08 | Continental Teves Ag & Co. Ohg | Method for producing a speed sensor element |
EP2406581B1 (en) | 2009-03-11 | 2017-06-14 | Continental Teves AG & Co. oHG | Biaxial rotation rate sensor |
CN103153729B (en) | 2010-08-10 | 2016-08-03 | 大陆-特韦斯贸易合伙股份公司及两合公司 | For regulating the method and system of riding stability |
US8440507B1 (en) * | 2012-02-20 | 2013-05-14 | Freescale Semiconductor, Inc. | Lead frame sulfur removal |
KR101359544B1 (en) * | 2012-06-01 | 2014-02-11 | 필코씨앤디(주) | Component for packaging and the manufacturing method of the same |
DE102012223982A1 (en) * | 2012-12-20 | 2014-06-26 | Continental Teves Ag & Co. Ohg | Method for producing an electronic assembly |
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2014
- 2014-07-08 DE DE102014213218.5A patent/DE102014213218A1/en active Pending
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2015
- 2015-06-25 CN CN201590000777.6U patent/CN206758422U/en active Active
- 2015-06-25 KR KR1020177001221A patent/KR101930649B1/en active IP Right Grant
- 2015-06-25 WO PCT/EP2015/064415 patent/WO2016005201A1/en active Application Filing
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KR20170018940A (en) | 2017-02-20 |
KR101930649B1 (en) | 2018-12-18 |
DE102014213218A1 (en) | 2016-02-18 |
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