CN206057238U - A kind of board-like gas detecting element of new slight fever - Google Patents
A kind of board-like gas detecting element of new slight fever Download PDFInfo
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- CN206057238U CN206057238U CN201621027347.6U CN201621027347U CN206057238U CN 206057238 U CN206057238 U CN 206057238U CN 201621027347 U CN201621027347 U CN 201621027347U CN 206057238 U CN206057238 U CN 206057238U
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- gas
- passivation layer
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- sensitive membrane
- extraction electrode
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Abstract
A kind of board-like gas detecting element of new slight fever, is related to gas sensor, in order to solve the problems, such as that the board-like gas sensor of existing slight fever has that sensitive material easily comes off and device overall dimensions are larger.Above-mentioned gas sensing element is followed successively by from bottom to top：Substrate, the first insulating passivation layer and the second insulating passivation layer that silicon nitride layer, silicon dioxide layer, silicon chip and silicon dioxide layer are constituted.Penetrating hollow silicon cup is provided with substrate, first insulating passivation layer is embedded with sensitive membrane extraction electrode, the electrode is located at the bottom surface of hollow silicon cup, its lower surface is coated with gas sensitization film, adding thermal resistance and temperature detecting resistance are embedded in the second insulating passivation layer, the upper surface of the passivation layer is provided with adding thermal resistance pad, temperature detecting resistance pad and sensitive membrane extraction electrode pad, and each pad upper surface is provided with chip bump.Hollow silicon cup causes gas sensitization film difficult for drop-off, and need not additionally install protective cover, reduces overall dimensions.
Description
Technical field
This utility model is related to gas sensor.
Background technology
Conductor oxidate gas sensor is able at each due to its simple structure, easy to make, low cost and other advantages
Extensively apply in field.But this kind of sensor need to be worked at high temperature, heater-type gas of the traditional approach based on earthenware
Sensor bulk is larger, and with larger power consumption (about 1W), and concordance is poor.With microelectromechanical systems (MEMS) technique skill
The fast development of art, making small volume, low-power consumption, the MEMS micro-hotplate gas sensors of easy of integration, mass become numerous and grind
The person's of studying carefully focus of attention.At present, the board-like gas sensor of slight fever remains some problems, the quasiconductor such as with silicon as substrate
Device is poor with the adhesive force of gas sensitive, and gas sensitive is susceptible to obscission；Conventional wire bond package causes mutually
Connection length increases, and this kind of packaged type causes gas sensor thickness to increase, and is unfavorable for playing the board-like gas sensor of slight fever
The advantage of small size；Further, since the micro-hotplate structure for suspending is easier to be destroyed by external force, need to install independent on sensing element
Protective cover, and small network structure is set to ensure its contact with test gas in upper surface, this kind of structure causes top
Highly it is significantly increased, substantially increases the overall dimensions of gas sensor.In order to reduce the overall dimensions of gas sensor, grind
The person of studying carefully gives some solutions in terms of encapsulation, and such as patent of invention CN104515793A discloses a kind of gas sensor envelope
Gas-sensing element is attached to substrate to construct the gas sensing with frivolous structure by piece installing by flip-chiop bonding method
Device, but which need to be especially tailored gas injection port on substrate to complete contact of the sensing element with gas, and manufacture method is more
It is complicated.Patent of invention CN105158299A and patent of invention CN105277594A individually disclose a kind of for manufacturing gas sensing
The method and gas sensor packaging part of device encapsulation, by applying molding compounds to close semiconductor chip at least in part,
So as to opening is formed in molding compounds, apply sensitive material to ensure its connection with test gas in opening portion, should
The method of kind needs the assembling between air-sensitive chip and carrier and molding compounds, is reducing gas sensor terms of overall dimensions advantage
Less, and its sensitive material need to have certain limitation in actual applications to complete encapsulation after-applied.
Utility model content
The purpose of this utility model is to solve the board-like gas sensor of existing slight fever and there is sensitive material easily to take off
Fall and problem that device overall dimensions are larger, there is provided a kind of board-like gas detecting element of new slight fever.
A kind of board-like gas detecting element of new slight fever described in the utility model, is followed successively by from bottom to top：Silicon nitride layer
3rd, silicon dioxide layer 2, silicon chip 1, silicon dioxide layer 2, the first insulating passivation layer 5 and the second insulating passivation layer 8；
The silicon dioxide layer 2 of silicon nitride layer 3, silicon chip 1 and its both sides constitutes the substrate of the gas detecting element, described
Penetrating hollow silicon cup 17 is provided with substrate, sensitive membrane extraction electrode 4, the sensitive membrane inside the first insulating passivation layer 5, is embedded with
Extraction electrode 4 is located at the bottom surface of hollow silicon cup 17, and the lower surface of sensitive membrane extraction electrode 4 is coated with gas sensitization film 14, heating
Resistance 6 and temperature detecting resistance 7 are embedded in the second insulating passivation layer 8, and the bottom surface of adding thermal resistance 6 and temperature detecting resistance 7 is respectively positioned on
The upper surface of one insulating passivation layer 5, the upper surface of the second insulating passivation layer 8 are provided with the weldering of adding thermal resistance pad 10, temperature detecting resistance
Disk 11 and sensitive membrane extraction electrode pad 12, adding thermal resistance pad 10 is electrically connected with adding thermal resistance 6, temperature detecting resistance pad 11 with
Temperature detecting resistance 7 is electrically connected, and sensitive membrane extraction electrode pad 12 is electrically connected with sensitive membrane extraction electrode 4, temperature detecting resistance pad
11st, the upper surface of adding thermal resistance pad 10 and sensitive membrane extraction electrode pad 12 is provided with chip bump 13.
According to preferred implementation of the present utility model, upper surface and 14 phase of gas sensitization film of the second insulating passivation layer 8
It is carved with groove 9 in corresponding position.
According to preferred implementation of the present utility model, silicon chip 1 adopts the double throwing silicon chips of N-type (100).
According to preferred implementation of the present utility model, gas sensitization film 14 is fixed on quick using the method for spraying or drop coating
On sense film extraction electrode 4.
According to preferred implementation of the present utility model, gas sensitization membrane material is SnO2、WO3、ZnO、In2O3、ZnFe2O4
And V2O5-SnO2In one or more.
According to preferred implementation of the present utility model, between sensitive membrane extraction electrode 4 and the first insulating passivation layer 5, add
Between thermal resistance 6 and the first insulating passivation layer 5 and the second insulating passivation layer 8, and temperature detecting resistance 7 and the first insulating passivation layer 5
And second make between insulating passivation layer 8 and have for increasing the transition zone of adhesiveness, the material of the transition zone is Cr or Ti.
According to preferred implementation of the present utility model, the thickness range of the second insulating passivation layer 8 is
According to preferred implementation of the present utility model, the depth bounds of groove 9 is
According to preferred implementation of the present utility model, adding thermal resistance pad 10, temperature detecting resistance pad 11 and sensitive membrane are drawn
The material for going out electrode pad 12 is the one kind in Pt, Au, Al and W.
According to preferred implementation of the present utility model, adding thermal resistance pad 10, temperature detecting resistance pad 11 and sensitive membrane are drawn
Going out between electrode pad 12 and the second insulating passivation layer 8 to make has for increasing the transition zone of adhesiveness, the transition zone
Material is Cr or Ti.
A kind of board-like gas detecting element of new slight fever described in the utility model has advantages below：
1st, hollow silicon cup 17 can play a protective role to gas sensitization film 14 so that gas sensitization film 14 is difficult for drop-off,
The reliability and stability of gas detecting element are improve, and the guarantor for protective gas sensitive membrane 14 additionally need not be installed
Shield, greatly reduces the overall dimensions of gas detecting element；
2nd, without the need for gas injection port is especially tailored on substrate, and ensure that gas sensitization film 14 with test gas
It is fully contacted.
Description of the drawings
Fig. 1 is the profile of the board-like gas detecting element of a kind of new slight fever described in embodiment one；
Structural representations of the Fig. 2 for adding thermal resistance 6, adding thermal resistance pad 10, temperature detecting resistance 7 and temperature detecting resistance pad 11；
Fig. 3 is the structural representation of sensitive membrane extraction electrode 4 and sensitive membrane extraction electrode pad 12；
Fig. 4 is the structure schematic diagram of the board-like gas detecting element of a kind of new slight fever described in embodiment one；
Fig. 5 is the method for packing schematic diagram of the board-like gas sensitization unit of a kind of new slight fever described in embodiment one；
Fig. 6 is the structural representation after the board-like gas sensitization unit encapsulation of a kind of new slight fever described in embodiment one；
Fig. 7 is the positive structure schematic of the board-like gas detecting element of a kind of new slight fever described in embodiment two.
Specific embodiment
Specific embodiment one：Present embodiment is illustrated with reference to Fig. 1 to Fig. 4, it is a kind of new micro- described in present embodiment
Hot plate type gas detecting element is followed successively by from bottom to top：Silicon nitride layer 3, silicon dioxide layer 2, silicon chip 1, silicon dioxide layer 2, first
Insulating passivation layer 5 and the second insulating passivation layer 8；
The silicon dioxide layer 2 of silicon nitride layer 3, silicon chip 1 and its both sides constitutes the substrate of the gas detecting element, described
Penetrating hollow silicon cup 17 is provided with substrate, sensitive membrane extraction electrode 4, the sensitive membrane inside the first insulating passivation layer 5, is embedded with
Extraction electrode 4 is located at the bottom surface of hollow silicon cup 17, and the lower surface of sensitive membrane extraction electrode 4 is coated with gas sensitization film 14, heating
Resistance 6 and temperature detecting resistance 7 are embedded in the second insulating passivation layer 8, and the bottom surface of adding thermal resistance 6 and temperature detecting resistance 7 is respectively positioned on
The upper surface of one insulating passivation layer 5, the upper surface of the second insulating passivation layer 8 are provided with the weldering of adding thermal resistance pad 10, temperature detecting resistance
Disk 11 and sensitive membrane extraction electrode pad 12, adding thermal resistance pad 10 is electrically connected with adding thermal resistance 6, temperature detecting resistance pad 11 with
Temperature detecting resistance 7 is electrically connected, and sensitive membrane extraction electrode pad 12 is electrically connected with sensitive membrane extraction electrode 4, temperature detecting resistance pad
11st, the upper surface of adding thermal resistance pad 10 and sensitive membrane extraction electrode pad 12 is provided with chip bump 13.
Hollow silicon cup 17 is a hole in substrate, and hollow silicon cup 17 runs through whole substrate, is made with the first insulating passivation layer 5
For its bottom surface.17 cross section of hollow silicon cup in Fig. 4 is square.
The board-like gas detecting element of a kind of new slight fever described in present embodiment is made on N-type (100) monocrystalline silicon piece,
Which is processed using MEMS technology and is obtained.The gas detecting element is mainly by 14 groups of micro-hotplate and gas sensitive membrane
Into.As shown in figure 1, micro-hotplate includes the parts such as adding thermal resistance 6, temperature detecting resistance 7, sensitive membrane extraction electrode 4 and hollow silicon cup.
Wherein, adding thermal resistance 6 is located at micro-hotplate upper strata, and is produced on same layer with temperature detecting resistance 7；Sensitive membrane extraction electrode 4 is produced on
The lower floor of adding thermal resistance 6；Hollow silicon cup is located at the lower floor of sensitive membrane extraction electrode 4；Gas sensitization film 14 is located in hollow silicon cup
Portion, is connected with sensitive membrane extraction electrode 4, and gas sensitive material is fixed on sensitive membrane using the method for spraying or drop coating and draws electricity
On pole 4.Using the first insulating passivation layer 5 as insulating barrier between sensitive membrane extraction electrode 4 and adding thermal resistance 6, in adding thermal resistance 6
Side makes the second insulating passivation layer 8 as protective layer, and hollow silicon cup is to be handed over from the back side using dry etching and wet-etching technology
For processing, formed back side silicon nitride silicon layer, back side silicon dioxide layer, silicon layer and front silicon dioxide layer etching completely rear successively,
Now sensitive membrane extraction electrode 4 can be exposed from the back side, gas sensitization film 14 is made on the surface of sensitive membrane extraction electrode 4, made
Gas sensitization film 14 is contacted with sensitive membrane extraction electrode 4.Need to be inverted gas detecting element before making gas sensitization film 14, then
The surface of the sensitive membrane extraction electrode 4 that gas sensitive material is fixed on inside silicon cup.Gas sensitization film 14 is located at hollow silicon
The cup bottom of cup, hollow silicon cup 17 can play a protective role to gas sensitization film 14.
The structure of the adding thermal resistance 6 and temperature detecting resistance 7 of above-mentioned gas sensing element is as shown in Fig. 2 adding thermal resistance 6 and thermometric
Resistance 7 adopts serpentine configuration.6 two ends of adding thermal resistance respectively connect an adding thermal resistance pad 10, and 7 two ends of temperature detecting resistance respectively connect
One temperature detecting resistance pad 11.
The structure of sensitive membrane extraction electrode 4 as shown in figure 3, sensitive membrane extraction electrode 4 includes two independent parts, per portion
Subpackage contains two contact conductors being connected, and junction point is electrically connected with sensitive membrane extraction electrode pad 12.
As shown in figure 5, during encapsulation, above-mentioned gas sensing element is inverted on substrate 15, by chip bump 13 and substrate
Binding post 16 on 15 welds together, and the structure after closing is as shown in Figure 6.
It is packaged using flip-chip bonding process, temperature detecting resistance pad 11, adding thermal resistance pad 10 and sensitive membrane draw electricity
There is no the leads such as spun gold between pole pad 12 and binding post 16, shorten signal transmission distance, substantially increase signal transmission
Speed.Additionally, this packaging technology also has the advantages that reduces cost, improves production capacity.
In present embodiment, the material of sensitive membrane extraction electrode 4, adding thermal resistance 6 and temperature detecting resistance 7 is Pt, can basis
Need to make transition zone before Pt is made to increase adhesiveness, buffer layer material is the one kind in Cr or Ti.
The material of adding thermal resistance pad 10, temperature detecting resistance pad 11 and sensitive membrane extraction electrode pad 12 can from Pt,
One or more in Au, Al and W, can make transition zone to increase adhesiveness, its transition as needed before pad is made
Layer material is the one kind in Cr or Ti.
The material of gas sensitization film 14 is SnO2、WO3、ZnO、In2O3、ZnFe2O4And V2O5-SnO2In one or more.
First insulating passivation layer 5 is made using silicon nitride.
Second insulating passivation layer 8 adopts silicon dioxide or silicon nitride to make, and its thickness range is
Substrate 15 is PCB substrate, ceramic substrate or flexible base board.
Specific embodiment two：Present embodiment is illustrated with reference to Fig. 7, present embodiment is to described in embodiment one
The further restriction of the board-like gas detecting element of kind new slight fever, in present embodiment, the upper surface of the second insulating passivation layer 8 with
It is carved with groove 9 in the corresponding position of gas sensitization film 14.
As shown in fig. 7, groove 9 for square, the depth bounds of groove 9 can beIts area is more than
The area of gas sensitization film 14.
Square etching groove is made on second insulating passivation layer 8, certain depth is etched and is ensured micro- during face-down bonding
Gap is formed between hot plate and substrate, to ensure radiating, power consumption is reduced.
Claims (6)
1. the board-like gas detecting element of a kind of new slight fever, it is characterised in that be followed successively by from bottom to top：Silicon nitride layer (3), dioxy
SiClx layer (2), silicon chip (1), silicon dioxide layer (2), the first insulating passivation layer (5) and the second insulating passivation layer (8)；
The silicon dioxide layer (2) of silicon nitride layer (3), silicon chip (1) and its both sides constitutes the substrate of the gas detecting element, institute
State and in substrate, be provided with penetrating hollow silicon cup (17), inside the first insulating passivation layer (5), be embedded with sensitive membrane extraction electrode (4), institute
Sensitive membrane extraction electrode (4) is stated positioned at the bottom surface of hollow silicon cup (17), and the lower surface of sensitive membrane extraction electrode (4) is coated with gas
Sensitive membrane (14), adding thermal resistance (6) and temperature detecting resistance (7) are embedded in the second insulating passivation layer (8), and adding thermal resistance (6) and
The bottom surface of temperature detecting resistance (7) is respectively positioned on the upper surface of the first insulating passivation layer (5), and the upper surface of the second insulating passivation layer (8) sets
It is equipped with adding thermal resistance pad (10), temperature detecting resistance pad (11) and sensitive membrane extraction electrode pad (12), adding thermal resistance pad
(10) it is electrically connected with adding thermal resistance (6), temperature detecting resistance pad (11) is electrically connected with temperature detecting resistance (7), sensitive membrane draws electricity
Pole pad (12) is electrically connected with sensitive membrane extraction electrode (4), temperature detecting resistance pad (11), adding thermal resistance pad (10) and sensitivity
The upper surface of film extraction electrode pad (12) is provided with chip bump (13).
2. a kind of board-like gas detecting element of new slight fever according to claim 1, it is characterised in that the second insulation passivation
It is carved with groove (9) in the position that the upper surface of layer (8) is corresponding with gas sensitization film (14).
3. the board-like gas detecting element of a kind of new slight fever according to claim 1, it is characterised in that silicon chip (1) adopts N
Type is double to throw silicon chip.
4. a kind of board-like gas detecting element of new slight fever according to claim 1, it is characterised in that gas sensitization film
(14) it is fixed on sensitive membrane extraction electrode (4) using the method for spraying or drop coating.
5. a kind of board-like gas detecting element of new slight fever according to claim 1, it is characterised in that the second insulation passivation
Layer (8) thickness range be
6. a kind of board-like gas detecting element of new slight fever according to claim 2, it is characterised in that the depth of groove (9)
Spending scope is
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621027347.6U CN206057238U (en) | 2016-08-31 | 2016-08-31 | A kind of board-like gas detecting element of new slight fever |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201621027347.6U CN206057238U (en) | 2016-08-31 | 2016-08-31 | A kind of board-like gas detecting element of new slight fever |
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| Publication Number | Publication Date |
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| CN206057238U true CN206057238U (en) | 2017-03-29 |
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| CN201621027347.6U Expired - Fee Related CN206057238U (en) | 2016-08-31 | 2016-08-31 | A kind of board-like gas detecting element of new slight fever |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106226361A (en) * | 2016-08-31 | 2016-12-14 | 中国电子科技集团公司第四十九研究所 | A kind of board-like gas detecting element of novel slight fever |
| JP2019002878A (en) * | 2017-06-19 | 2019-01-10 | 新コスモス電機株式会社 | Semiconductor-type gas sensor and method for detecting gas |
| CN113120853A (en) * | 2021-04-06 | 2021-07-16 | 桂林电子科技大学 | Accurate temperature control system of micron-sized silicon-based micro-heating plate |
-
2016
- 2016-08-31 CN CN201621027347.6U patent/CN206057238U/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106226361A (en) * | 2016-08-31 | 2016-12-14 | 中国电子科技集团公司第四十九研究所 | A kind of board-like gas detecting element of novel slight fever |
| JP2019002878A (en) * | 2017-06-19 | 2019-01-10 | 新コスモス電機株式会社 | Semiconductor-type gas sensor and method for detecting gas |
| CN113120853A (en) * | 2021-04-06 | 2021-07-16 | 桂林电子科技大学 | Accurate temperature control system of micron-sized silicon-based micro-heating plate |
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Granted publication date: 20170329 Termination date: 20200831 |