CN205725442U - Current equalization circuit and test circuit for IGBT module - Google Patents
Current equalization circuit and test circuit for IGBT module Download PDFInfo
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- CN205725442U CN205725442U CN201620359010.9U CN201620359010U CN205725442U CN 205725442 U CN205725442 U CN 205725442U CN 201620359010 U CN201620359010 U CN 201620359010U CN 205725442 U CN205725442 U CN 205725442U
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Abstract
The utility model discloses a kind of current equalization circuit for IGBT module and test circuit.Described IGBT module includes multiple IGBT unit, and described current equalization circuit includes: balanced drive circuit, for generating the balanced drive gate signal driving multiple active devices；The plurality of active device, it is connected with described balanced drive circuit and described IGBT module respectively, wherein, the plurality of IGBT unit and the plurality of active device connect correspondingly, when balanced drive gate signal described in described balanced drive circuit evolving, the emitter current of each IGBT unit of the plurality of IGBT unit is equal, and each active device parameter in the plurality of active device is identical.The current equalization circuit that this utility model provides makes current balance the adjustable of parallel IGBT module.
Description
Technical field
This utility model relates to electronic circuit field, in particular it relates to a kind of electricity for IGBT module
Stream equalizing circuit and test circuit.
Background technology
In IGBT (Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) module
IGBT unit run in parallel provide high-power output be power technology development a direction.
The each unit characteristic of parallel running is inconsistent, and the IGBT unit that may make undertakes bigger electric current even
Overload, some IGBT unit run on underloading its to being unloaded.Its result necessarily makes power supply reliability drop
It is low, the life-span reduces.It is thus desirable to realize current-sharing measure to ensure uniformly dividing of the electric current of each IGBT unit
Join, prevent single IGBT unit from operating in current limitation state of value.
The parallel current-sharing method of application is emitter resistance feedback transmitter at present.Fig. 1 is existing emitter stage electricity
The schematic diagram of resistance feedback transmitter.As it is shown in figure 1, DUT1, DUT2 ..., DUT48 are parallel IGBT
48 IGBT unit of module.Re1, Re2 ..., Re48 are emitter stage feedback resistance.Introduce
Re1, Re2 ..., Re48 make DUT1, DUT2 ..., the current balance of DUT48 in parallel.
Above-mentioned emitter resistance feedback transmitter is primarily present following shortcoming: first: if emitter resistance takes
Being worth less than normal, the current-sharing to parallel IGBT module improves the best；Second: if emitter resistance value is relatively big,
The gate voltage easily causing IGBT has greatly changed near Miller voltage platform, meeting time serious
Produce lasting vibration.
Utility model content
The purpose of this utility model be to provide a kind of current balance making parallel IGBT module, for
The current equalization circuit of IGBT module and test circuit.
To achieve these goals, this utility model provides a kind of current balance electricity for IGBT module
Road, described IGBT module includes multiple IGBT unit, and described current equalization circuit includes: equilibrium is driven
Galvanic electricity road, for generating the balanced drive gate signal driving multiple active devices；The plurality of active device
Part, is connected with described balanced drive circuit and described IGBT module respectively, wherein, and the plurality of IGBT
Unit and the plurality of active device connect correspondingly, when equal described in described balanced drive circuit evolving
When weighing apparatus drives gate signal, the emitter current phase of each IGBT unit of the plurality of IGBT unit
Deng, each active device parameter in the plurality of active device is identical.
Alternatively, the plurality of active device be following in any one: multiple IGBT test cells,
Multiple MOSFET or multiple BJT.
Alternatively, described balanced drive circuit includes active device drive power supply, the first resistance and the second electricity
Resistance, wherein, described active device drives the positive pole of power supply to pass sequentially through described first resistance and described second
Resistance connects described active device and drives the negative pole of power supply, between described first resistance and described second resistance
Node is the cathode output end of described balanced drive circuit, and described active device drives the negative pole of power supply to be institute
State the cathode output end of balanced drive circuit.
Alternatively, the plurality of active device is multiple IGBT test cells, wherein, the plurality of IGBT
The grid of each IGBT test cell in test cell connects the positive pole output of described balanced drive circuit
End, the colelctor electrode of each IGBT test cell meets the emitter stage of the IGBT unit of correspondence, each IGBT
The emitter stage of test cell connects cathode output end the ground connection of described balanced drive circuit.
Alternatively, the plurality of active device is multiple MOSFET, wherein, and the plurality of MOSFET
In the grid of each MOSFET meet the cathode output end of described balanced drive circuit, each MOSFET
Drain electrode connect the emitter stage of IGBT unit of correspondence, the source electrode of each MOSFET connects described balanced drive
The cathode output end of circuit ground connection.
Alternatively, the plurality of active device is multiple BJT, wherein, and each in the plurality of BJT
The base stage of BJT connects the cathode output end of described balanced drive circuit, and the colelctor electrode of each BJT connects correspondence
The emitter stage of IGBT unit, the emitter stage of each BJT connects the cathode output end of described balanced drive circuit
And ground connection.
This utility model also provides for a kind of test circuit for IGBT module, and described test circuit includes:
The current equalization circuit that this utility model provides, is connected with described IGBT module, is used for making each IGBT
The emitter current of unit is equal；Test driver circuit, is connected with described IGBT module, is used for generating
Drive the Test driver gate signal of described IGBT module；First electric capacity, one end of described first electric capacity
Connect the colelctor electrode of each IGBT unit in the plurality of IGBT unit, and connect DC source, described
Another cathode output end terminating described balanced drive circuit and described Test driver circuit of first electric capacity
Cathode output end and ground connection, wherein, the grid of each IGBT unit connects described Test driver circuit
Cathode output end, the emitter stage of each IGBT unit connects the active device of correspondence.
This utility model also provides for a kind of test circuit for IGBT module, and described test circuit includes:
The current equalization circuit that this utility model provides, is connected with described IGBT module, is used for making each IGBT
The emitter current of unit is equal；Test driver circuit, is connected with described IGBT module, is used for generating
Drive the Test driver gate signal of described IGBT module；Inductance, diode and the second electric capacity, described
One end of second electric capacity meets one end of described inductance, the negative electrode of described diode and DC source, institute respectively
State the colelctor electrode of each IGBT unit in multiple IGBT unit and connect the other end of described inductance, described
The anode of diode, described second electric capacity another terminate described balanced drive circuit cathode output end and
The cathode output end of described Test driver circuit ground connection, wherein, the grid of each IGBT unit meets institute
Stating the cathode output end of Test driver circuit, the emitter stage of each IGBT unit connects the active device of correspondence.
Alternatively, described Test driver circuit includes module drive power supply, the 3rd resistance and the 4th resistance,
Wherein, the positive pole of described module drive power supply passes sequentially through described 3rd resistance and described 4th resistance meets institute
Stating the negative pole of module drive power supply, the node between described 3rd resistance and described 4th resistance is described survey
The cathode output end of examination drive circuit, the negative pole of described module drive power supply is described Test driver circuit
Cathode output end.
Alternatively, the plurality of active device is multiple IGBT test cells, each IGBT unit
Emitter stage connects the colelctor electrode of the active device of correspondence, or, the plurality of active device is multiple
MOSFET, the emitter stage of each IGBT unit connects the drain electrode of the active device of correspondence, or, described
Multiple active devices are multiple BJT, and the emitter stage of each IGBT unit connects the collection of the active device of correspondence
Electrode.
By technique scheme, multiple active devices are connected correspondingly multiple IGBT unit,
The emitter current that VA characteristic curve according to IGBT can obtain IGBT unit is equal, i.e. parallel IGBT
Current balance.It addition, according to the VA characteristic curve of IGBT, regulation balanced drive circuit output
Balanced drive gate signal, it is possible to regulate the emitter current of each IGBT unit.Therefore, this practicality
The current equalization circuit of novel offer makes current balance the adjustable of parallel IGBT module.
Other feature and advantage of the present utility model will give in detailed description of the invention part subsequently in detail
Explanation.
Accompanying drawing explanation
Accompanying drawing is used to offer and is further appreciated by of the present utility model, and constitutes one of description
Point, it is used for explaining this utility model together with detailed description below, but is not intended that this practicality
Novel restriction.In the accompanying drawings:
Fig. 1 is the schematic diagram of existing emitter resistance feedback transmitter；
Fig. 2 is the structured flowchart of the current equalization circuit that an exemplary embodiment provides；
Fig. 3 is the schematic diagram of the current equalization circuit that an exemplary embodiment provides；
Fig. 4 is the output characteristic curve of the IGBT module that an exemplary embodiment provides；
Fig. 5 is the schematic diagram of the current equalization circuit that another exemplary embodiment provides；
Fig. 6 is the schematic diagram of the current equalization circuit that further example embodiment provides；
Fig. 7 is the schematic diagram of the test circuit that an exemplary embodiment provides；
Fig. 8 is the schematic diagram of the test circuit that another exemplary embodiment provides；
Fig. 9 is the schematic diagram of the test circuit that further example embodiment provides；
Figure 10 is the schematic diagram of the test circuit that further example embodiment provides；
Figure 11 is the schematic diagram of the test circuit that an exemplary embodiment provides；
Figure 12 is the schematic diagram of the test circuit that another exemplary embodiment provides；
Figure 13 is the schematic diagram of the test circuit that further example embodiment provides；And
Figure 14 is the schematic diagram of the test circuit that further example embodiment provides.
Detailed description of the invention
Below in conjunction with accompanying drawing, detailed description of the invention of the present utility model is described in detail.It is to be understood that
It is that detailed description of the invention described herein is merely to illustrate and explains this utility model, is not used to limit
This utility model processed.
Fig. 2 is the structured flowchart of the current equalization circuit that an exemplary embodiment provides.As in figure 2 it is shown,
IGBT module 20 includes multiple IGBT cells D UT1, DUT2 ..., DUTn.For IGBT
The current equalization circuit 10 of module 20 can include balanced drive circuit 101 and multiple active device Q1,
Q2、……、Qn.Balanced drive circuit 10 is for generating the balanced drive door driving multiple active devices
Pole signal.The plurality of active device is connected with balanced drive circuit 101 and IGBT module 20 respectively.
Wherein, multiple IGBT unit and multiple active device connect correspondingly, when balanced drive circuit 101
When generating balanced drive gate signal, the emitter current of each IGBT unit of multiple IGBT unit
Equal, each active device parameter in multiple active devices is identical.
By technique scheme, multiple active devices are connected correspondingly multiple IGBT unit,
The emitter current that VA characteristic curve according to IGBT can obtain IGBT unit is equal, i.e. parallel IGBT
Current balance.It addition, according to the VA characteristic curve of IGBT, regulation balanced drive circuit output
Balanced drive gate signal, it is possible to regulate the emitter current of each IGBT unit.Therefore, this practicality
The current equalization circuit of novel offer makes current balance the adjustable of parallel IGBT module.
Specifically, the plurality of active device can be following in any one: multiple IGBT test
Unit, multiple MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor, gold
Belong to oxide semiconductor field effect transistor) or multiple BJT (Bipolar Junction Transistor,
Bipolar junction transistor).Each active device parameter in multiple active devices is identical, it is, often
Individual active device broadly falls into identical device, and parameter is identical.
Fig. 3 is the schematic diagram of the current equalization circuit 10 that an exemplary embodiment provides.As it is shown on figure 3,
Balanced drive circuit 101 includes active device drive power supply Vg1, the first resistance R1 and the second resistance R2.
Wherein, active device drives the positive pole of power supply Vg1 to pass sequentially through the first resistance R1 and the second resistance R2
Being connected to the negative pole of source device drive power supply, the node between the first resistance R1 and the second resistance R2 is equal
The cathode output end of weighing apparatus drive circuit 101, active device drives the negative pole of power supply Vg1 to be balanced drive electricity
The cathode output end on road 101.
In this embodiment, multiple active devices the most multiple IGBT test cell.This embodiment and with
After embodiment in, as a example by 48 active devices and 48 IGBT unit.Wherein, multiple IGBT
The grid of each IGBT test cell in test cell connects the cathode output end of balanced drive circuit, often
The colelctor electrode of individual IGBT test cell connects the emitter stage of the IGBT unit of correspondence, and each IGBT tests
The emitter stage of unit connects cathode output end the ground connection of balanced drive circuit.In the embodiment shown in fig. 3,
Select suitable Vg1, i.e. available required Iq value, Iq is Iq1, Iq2 ..., Iq48 sum.
Such as, Iq is 1600A, then Iq1, Iq2 ..., the electric current of Iq48 are 33.33A.
The principle of embodiment illustrated in fig. 3 described in detail below.
When IGBT module is operated in amplification region, at collector voltage (collector emitter voltage)
VCEIn the case of Yi Ding, collector current ICWith grid voltage (gate-emitter voltage) VGEIncreasing
High and become big.
Concrete, Fig. 4 is the output characteristic curve of the IGBT module that an exemplary embodiment provides.As
Shown in Fig. 4, X-axis is collector voltage VCE, wherein BVCEFor collector breakdown voltage, Y-axis is
Collector current IC.When IGBT is operated in amplification region, intercept a certain specific collector voltage VCEValue
Time, it is known that grid voltage VGEThe biggest, colelctor electrode output electric current ICThe biggest, such as VGE2More than VGE1,
The electric current I of its correspondenceC2Also greater than electric current IC1, i.e. collector current ICV is pressed with grid radioGEIncrease
And become big.Wherein, collector voltage VCEFor IGBT collector emitter voltage, ICFor IGBT's
Output electric current.
When IGBT is operated in amplification region, when input voltage one timing of load, can be driven by regulation
The driving gate signal on galvanic electricity road thus regulate grid voltage VGESize so that collector current IC
Electric current produces change.So can regulate collector current ICElectric current, reaches to adjust the purpose of electric current.
In the present embodiment, when IGBT is in amplification region, at grid voltage VGEOne timing, current collection
Electrode current ICAt collector voltage VCEKeep constant during increase.
Concrete, as shown in Figure 4, when IGBT is operated in amplification region, at a certain particular gate voltage
VGEUnder, such as VGE1、VGE2、VGE3And VGE4In arbitrary curve, it is known that collector current IC
It is held essentially constant, i.e. output electric current ICNot with collector voltage VCEIncrease and change.Work as IGBT
When being operated in amplification region, at a certain particular gate voltage VGEUnder, collector current is held essentially constant.
In other words, as driving gate signal one timing that drive circuit produces, grid voltage VGEAlso corresponding true
Fixed, such that it is able to limit colelctor electrode output electric current Ic。
Fig. 5 is the schematic diagram of the current equalization circuit that another exemplary embodiment provides.As it is shown in figure 5,
Balanced drive circuit is identical with the balanced drive circuit in embodiment illustrated in fig. 3.Multiple active devices are many
Individual MOSFET.Wherein, the grid of each MOSFET in multiple MOSFET connects balanced drive electricity
The cathode output end on road, the drain electrode of each MOSFET connects the emitter stage of the IGBT unit of correspondence, each
The source electrode of MOSFET connects cathode output end the ground connection of balanced drive circuit.
Fig. 6 is the schematic diagram of the current equalization circuit that further example embodiment provides.As shown in Figure 6,
Balanced drive circuit is identical with the balanced drive circuit in embodiment illustrated in fig. 3.Multiple active devices are many
Individual BJT.Wherein, the base stage of each BJT in multiple BJT connects the cathode output end of balanced drive circuit,
The colelctor electrode of each BJT connects the emitter stage of the IGBT unit of correspondence, and the emitter stage of each BJT connects equilibrium
The cathode output end of drive circuit ground connection.
This utility model also provides for a kind of test circuit for IGBT module.Fig. 7 is an exemplary reality
Execute the schematic diagram of the test circuit that example provides.As it is shown in fig. 7, described test circuit includes: this practicality is new
The current equalization circuit 10 of type offer, Test driver circuit 30 and the first electric capacity C1.
Current equalization circuit 10 is connected with IGBT module, for making the emitter stage electricity of each IGBT unit
Flow equal.
Test driver circuit 30 is connected with IGBT module, drives for generating the test driving IGBT module
Dynamic gate signal.
The colelctor electrode of each IGBT unit in the one multiple IGBT unit of termination of the first electric capacity C1,
And connect DC source, the cathode output end of another termination balanced drive circuit 10 of the first electric capacity C1 and survey
The cathode output end of examination drive circuit 30 ground connection.
Wherein, the grid of each IGBT unit connects the cathode output end of Test driver circuit 30, each
The emitter stage of IGBT unit connects the active device of correspondence.In Fig. 7, multiple active devices are shown as multiple
BJT。
The test circuit that this embodiment provides may be used for testing the short circuit curve of IGBT module.
Fig. 8 is the schematic diagram of the test circuit that another exemplary embodiment provides.As shown in Figure 8, test
Drive circuit includes module drive power supply Vg, the 3rd resistance R3 and the 4th resistance R4.Wherein, module
The positive pole driving power supply Vg passes sequentially through the 3rd resistance R3 and the 4th resistance R4 connection module drives power supply
The negative pole of Vg, the node between the 3rd resistance R3 and the 4th resistance R4 is Test driver circuit 30
Cathode output end, the cathode output end that negative pole is Test driver circuit 30 of module drive power supply Vg.Many
Individual active device is multiple IGBT test cells, and the emitter stage of each IGBT unit connects the active of correspondence
The colelctor electrode of device.
Fig. 9 is the schematic diagram of the test circuit that further example embodiment provides.As it is shown in figure 9, test
Drive circuit is identical with the Test driver circuit 30 in Fig. 8.Multiple active devices are multiple MOSFET,
The emitter stage of each IGBT unit connects the drain electrode of the active device of correspondence.
Figure 10 is the schematic diagram of the test circuit that further example embodiment provides.As shown in Figure 10, survey
Examination drive circuit is identical with the Test driver circuit 30 in Fig. 8.Multiple active devices are multiple BJT,
The emitter stage of each IGBT unit connects the colelctor electrode of the active device of correspondence.
The above-mentioned test circuit for IGBT module, the current balance provided by application this utility model
Circuit, it is possible to make parallel IGBT module test short circuit curve time, current balance adjustable.
This utility model also provides for a kind of test circuit for IGBT module.Figure 11 is one exemplary
The schematic diagram of the test circuit that embodiment provides.As shown in figure 11, described test circuit includes: this reality
With the current equalization circuit 10 of novel offer, Test driver circuit 30, inductance L, diode D and
Two electric capacity C2.
Current equalization circuit 10 is connected with described IGBT module, for making the transmitting of each IGBT unit
Electrode current is equal.
Test driver circuit 30 is connected with described IGBT module, is used for generating the described IGBT module of driving
Test driver gate signal.
One end of second electric capacity C2 connects one end of inductance L, the negative electrode of diode D and DC source respectively
VCC, the colelctor electrode of each IGBT unit in multiple IGBT unit connect the other end of inductance L, two
The anode of pole pipe D, the second electric capacity C2 another termination balanced drive circuit 10 cathode output end and
The cathode output end of Test driver circuit 30 ground connection.
Wherein, the grid of each IGBT unit connects the cathode output end of described Test driver circuit, each
The emitter stage of IGBT unit connects the active device of correspondence.In Figure 11, multiple active devices are shown as multiple
IGBT。
The test circuit that this embodiment provides may be used for testing the dynamic parameter of IGBT module.
Figure 12 is the schematic diagram of the test circuit that another exemplary embodiment provides.As shown in figure 12, survey
Examination drive circuit is identical with the Test driver circuit in Fig. 8-Figure 10.Multiple active devices are multiple IGBT
Test cell, the emitter stage of each IGBT unit connects the colelctor electrode of the active device of correspondence.
Figure 13 is the schematic diagram of the test circuit that further example embodiment provides.As shown in figure 13, survey
Examination drive circuit is identical with the Test driver circuit in Fig. 8-Figure 10.Multiple active devices are multiple
MOSFET, the emitter stage of each IGBT unit connects the drain electrode of the active device of correspondence.
Figure 14 is the schematic diagram of the test circuit that further example embodiment provides.As shown in figure 14, survey
Examination drive circuit is identical with the Test driver circuit in Fig. 8-Figure 10.Multiple active devices are multiple BJT,
The emitter stage of each IGBT unit connects the colelctor electrode of the active device of correspondence.
The above-mentioned test circuit for IGBT module, the current balance provided by application this utility model
Circuit, it is possible to make parallel IGBT module test dynamic parameter time, current balance adjustable.
Preferred implementation of the present utility model is described in detail above in association with accompanying drawing, but, this practicality is new
Type is not limited to the detail in above-mentioned embodiment, in technology concept of the present utility model,
The technical solution of the utility model can be carried out multiple simple variant, these simple variant belong to this reality
With novel protection domain.
It is further to note that each the concrete technology described in above-mentioned detailed description of the invention is special
Levy, in the case of reconcilable, can be combined by any suitable means.In order to avoid need not
The repetition wanted, various possible compound modes are illustrated by this utility model the most separately.
Additionally, combination in any can also be carried out between various different embodiment of the present utility model, only
Wanting it without prejudice to thought of the present utility model, it should be considered as content disclosed in the utility model equally.
Claims (10)
1., for a current equalization circuit for IGBT module, described IGBT module includes multiple IGBT unit, it is characterised in that described current equalization circuit includes:
Balanced drive circuit, for generating the balanced drive gate signal driving multiple active devices；
The plurality of active device, it is connected with described balanced drive circuit and described IGBT module respectively, wherein, the plurality of IGBT unit and the plurality of active device connect correspondingly, when balanced drive gate signal described in described balanced drive circuit evolving, the emitter current of each IGBT unit of the plurality of IGBT unit is equal, and each active device parameter in the plurality of active device is identical.
Current equalization circuit the most according to claim 1, it is characterised in that the plurality of active device be following in any one: multiple IGBT test cells, multiple MOSFET or multiple BJT.
Current equalization circuit the most according to claim 1, it is characterized in that, described balanced drive circuit includes active device drive power supply, the first resistance and the second resistance, wherein, described active device drives the positive pole of power supply to pass sequentially through described first resistance and described second resistance connects described active device and drives the negative pole of power supply, node between described first resistance and described second resistance is the cathode output end of described balanced drive circuit, and described active device drives the cathode output end that negative pole is described balanced drive circuit of power supply.
Current equalization circuit the most according to claim 1, it is characterized in that, the plurality of active device is multiple IGBT test cells, wherein, the grid of each IGBT test cell in the plurality of IGBT test cell connects the cathode output end of described balanced drive circuit, the colelctor electrode of each IGBT test cell connects the emitter stage of the IGBT unit of correspondence, and the emitter stage of each IGBT test cell connects cathode output end the ground connection of described balanced drive circuit.
Current equalization circuit the most according to claim 1, it is characterized in that, the plurality of active device is multiple MOSFET, wherein, the grid of each MOSFET in the plurality of MOSFET connects the cathode output end of described balanced drive circuit, the drain electrode of each MOSFET connects the emitter stage of the IGBT unit of correspondence, and the source electrode of each MOSFET connects cathode output end the ground connection of described balanced drive circuit.
Current equalization circuit the most according to claim 1, it is characterized in that, the plurality of active device is multiple BJT, wherein, the base stage of each BJT in the plurality of BJT connects the cathode output end of described balanced drive circuit, the colelctor electrode of each BJT connects the emitter stage of the IGBT unit of correspondence, and the emitter stage of each BJT connects cathode output end the ground connection of described balanced drive circuit.
7. the test circuit for IGBT module, it is characterised in that described test circuit includes:
Current equalization circuit described in any claim in claim 1-6, is connected with described IGBT module, equal for the emitter current making each IGBT unit；
Test driver circuit, is connected with described IGBT module, for generating the Test driver gate signal driving described IGBT module；
First electric capacity, the colelctor electrode of each IGBT unit in the one the plurality of IGBT unit of termination of described first electric capacity, and connect DC source, another cathode output end terminating described balanced drive circuit of described first electric capacity and the cathode output end of described Test driver circuit ground connection
Wherein, the grid of each IGBT unit connects the cathode output end of described Test driver circuit, and the emitter stage of each IGBT unit connects the active device of correspondence.
8. the test circuit for IGBT module, it is characterised in that described test circuit includes:
Current equalization circuit described in any claim in claim 1-6, is connected with described IGBT module, equal for the emitter current making each IGBT unit；
Test driver circuit, is connected with described IGBT module, for generating the Test driver gate signal driving described IGBT module；
Inductance, diode and the second electric capacity, one end of described second electric capacity connects one end of described inductance, the negative electrode of described diode and DC source respectively, the colelctor electrode of each IGBT unit in the plurality of IGBT unit connects the other end of described inductance, the anode of described diode, another of described second electric capacity terminates cathode output end of described balanced drive circuit and the cathode output end of described Test driver circuit ground connection
Wherein, the grid of each IGBT unit connects the cathode output end of described Test driver circuit, and the emitter stage of each IGBT unit connects the active device of correspondence.
9. according to the test circuit described in claim 7 or 8, it is characterized in that, described Test driver circuit includes module drive power supply, the 3rd resistance and the 4th resistance, wherein, the positive pole of described module drive power supply passes sequentially through described 3rd resistance and described 4th resistance connects the negative pole of described module drive power supply, the cathode output end that node is described Test driver circuit between described 3rd resistance and described 4th resistance, the negative pole of described module drive power supply is the cathode output end of described Test driver circuit.
10. according to the test circuit described in claim 7 or 8, it is characterized in that, the plurality of active device is multiple IGBT test cells, the emitter stage of each IGBT unit connects the colelctor electrode of the active device of correspondence, or, the plurality of active device is multiple MOSFET, the emitter stage of each IGBT unit connects the drain electrode of the active device of correspondence, or, the plurality of active device is multiple BJT, and the emitter stage of each IGBT unit connects the colelctor electrode of the active device of correspondence.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620359010.9U CN205725442U (en) | 2016-04-26 | 2016-04-26 | Current equalization circuit and test circuit for IGBT module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620359010.9U CN205725442U (en) | 2016-04-26 | 2016-04-26 | Current equalization circuit and test circuit for IGBT module |
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| CN205725442U true CN205725442U (en) | 2016-11-23 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107290641A (en) * | 2017-07-21 | 2017-10-24 | 青岛港国际股份有限公司 | IGBT Simplified Test Equipments and method of testing |
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2016
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107290641A (en) * | 2017-07-21 | 2017-10-24 | 青岛港国际股份有限公司 | IGBT Simplified Test Equipments and method of testing |
| CN107290641B (en) * | 2017-07-21 | 2023-12-12 | 青岛港国际股份有限公司 | IGBT simple testing device and testing method |
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