CN205545179U - IGBT overflows detection circuitry and current foldback circuit - Google Patents
IGBT overflows detection circuitry and current foldback circuit Download PDFInfo
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Abstract
The utility model discloses a IGBT overflows detection circuitry and current foldback circuit, including a comparison circuit, the 2nd comparison circuit, sampling circuit and IGBT control circuit. The utility model discloses a limit of whether crossing IGBT's when the measuring switches on vce voltage detects and overflows the IGBT who results in and move back the saturation, contains two comparison circuit, and whether usefulness determines IGBT and be in and open the state, and whether another takes place to move back the saturation with determining IGBT. The utility model discloses the circuit is simple, moves back saturated condition's detection to IGBT during only having used two comparators and some simple peripheral circuits to realize promptly switching on, to the process of opening, increases RC time delay and adjustable for the malfunction of opening the in -process can not take place. Simultaneously when turn -offing, utilize hysteresis loop comparison circuit to close comparison circuit in advance, effectual malfunction when having avoided turn -offing. The shared area of circuit is little, and the cost is lower.
Description
Technical field
This utility model relates to IGBT over-current detection technology, particularly relate to a kind of IGBT over-current detection circuit and
Current foldback circuit.
Background technology
Igbt (Insulated Gate Bipolar Tramistor, IGBT) is MOSFET
With the multiple device of GTR, therefore, it had both had, and the operating rate of MOSFET is fast, switching frequency is high,
The advantage that input impedance is high, drive circuit is simple, stability is good, the current-carrying capacity containing again GTR is big,
The multiple advantages such as blocking voltage is high. it is the perfect switch device replacing GTR.IGBT is widely used at present
The device with self-switching-off capability, be widely used in all kinds of solid-state power source.
IGBT is widely used in various different power as a kind of common electronic power switch device
In the middle of the equipment of grade.Driving electric current required for IGBT with drive power the least, can directly with simulate or
Digital function block connects and is not necessary to add any additional interface circuit.The conducting of IGBT and shutoff are by grid voltage
UGE controls, and the IGBT conducting when UGE is more than cut-in voltage UGE (th), when grid and transmitting
Interpolar apply reversely or not plus signal time, IGBT is turned off.
IGBT, as common crystal audion, can be operated in linear amplification region, saturation region and cut-off region, its
Apply mainly as switching device.Mainly study saturation conduction and two shapes of cut-off of IGBT
State so that it is open rising edge and turn off trailing edge all steeper.
The possible cause causing IGBT to damage has: overvoltage, crosses stream and electrostatic etc..Overvoltage can be resistance to by selecting
Pressing higher pipe to evade, electrostatic then can be produced by specification and operate in experimentation and avoid.
Then need individually to do error protection for crossing stream, it is ensured that can effectively detect IGBT occurs stream when
To over current fault, and turn off IGBT reliably within several microseconds (typically in 10us) time.IGBT
Cross stream time, along with electric current climb rapidly certain value when, IGBT returns to line from saturated working area
Sex work district, moves back saturated phenomenon, and now the Vce voltage of IGBT can rapidly rise to busbar voltage.
Whether saturation region is exited, it is possible to detect whether IGBT there occurs the fault of stream by detection IGBT.
The stream of crossing of IGBT moves back the prior art of saturation detection and mainly has a following two:
1) after utilizing electrical resistance collection IGBT to cross signal, comparator action output protection signal during by crossing stream.This
The shortcoming of the scheme of kind: sampling resistor upstream super-high-current, resistor power is big, and temperature is high, and temperature is floated greatly, device
It is difficult to select, and resistance is more expensive；Ohmically signal has the biggest common-mode noise, common amplifier to locate
Reason.And the general common-mode voltage over the ground tolerance of difference amplifier is the highest.
Detection Vce saturation voltage, the output protection signal when voltage is higher than certain value.The conventional saturated inspection of Vce
Slowdown monitoring circuit because opening process cannot effectively be staggered, usually in IGBT opening process wrong report wrong or
In turn off process, it is impossible to effectively judge turn-off time point, frequent misoperation.So reliability is the highest.
Utility model content
This utility model provides a kind of IGBT over-current detection circuit, including the first comparison circuit, second compares
Circuit, sample circuit and IGBT control circuit, wherein,
Described first comparison circuit includes the first comparator, the first resistance R1 and the second resistance R2, described
One resistance R1 first end connect power supply, second end of described first resistance R1 respectively with the second resistance R2
The first end and described first comparator in-phase input end connect；
Described second comparison circuit includes the second comparator, the 6th resistance R6, the 7th resistance R7 and the 8th electricity
Resistance R8, the outfan of described first comparator is connected with first end of described 6th resistance R6, and the described 6th
Second end of resistance R6 anti-phase defeated with second end of described 7th resistance R7 and described second comparator respectively
Entering end to connect, first end of described 7th resistance R7 connects power supply, the outfan of described second comparator and institute
The second end stating the 8th resistance R8 connects, and first end of described 8th resistance R8 connects power supply；
Described sample circuit includes diode, the 9th resistance R9, the tenth resistance R10 and the 11st resistance R11,
The negative pole of described diode is connected with the colelctor electrode of IGBT to be measured, the positive pole of described diode and described 9th electricity
First end of resistance R9 connects, and first end of described tenth resistance R10 connects power supply, described tenth resistance R10
The second end respectively with one end, ground of second end of described 9th resistance R9 and described 11st resistance R11 even
Connecing, second end of described tenth resistance R10 is connected with the in-phase input end of described second comparator；
For export the outfan of the described IGBT control circuit of control signal respectively with the grid of IGBT to be measured
Connect with the inverting input of described first comparator.
Further, described first comparison circuit also includes the of the 5th resistance R5, described 5th resistance R5
One end is connected with the in-phase input end of described first comparator, second end of described 5th resistance R5 and described the
The outfan of one comparator connects.
Further, described first comparison circuit also includes the 3rd resistance R3 and the 4th resistance R4, described
First end of three resistance R3 is connected with the outfan of described IGBT control circuit, described 3rd resistance R3's
Second end is connected with the inverting input of described first comparator；First end of described 4th resistance R4 is with described
First end of the second resistance R2 connects, and second end of described 4th resistance R4 is same with described first comparator
Phase input connects.
Further, described first comparison circuit also includes the of the first electric capacity C1, described first electric capacity C1
One end ground connection, the second end connects the inverting input of described first comparator.
Further, the second end ground connection of described second resistance R2.
Further, described sample circuit also includes diode, and the negative pole of described diode is with IGBT's to be measured
Colelctor electrode connects, and the positive pole of described diode is connected with first end of described 9th resistance R9.
Further, described diode is Ultrafast recovery high-voltage diode.
Further, described sample circuit also includes Zener diode, the negative pole of described Zener diode and institute
The second end stating the tenth resistance R10 connects, the plus earth of described Zener diode.
Further, the second end ground connection of described 11st resistance R11.
This utility model additionally provides a kind of IGBT overcurrent protection based on above-mentioned IGBT over-current detection circuit electricity
Road, also includes voltage detection module and control module, and described voltage detection module compares with described second respectively
The outfan of device and described control module connect, the outfan of described control module and described IGBT control circuit
Input connect.
Implement this utility model, have the advantages that
(1) this utility model by the Vce voltage of IGBT during detection conducting whether cross limit detect move back full
With.Comprising two comparison circuits in circuit, one is used for judging whether IGBT is in opening state, another
It is used for judging whether IGBT moves back saturated.Just assert when only IGBT opens when, detection is moved back saturated
Being really to there occurs to move back saturated, when IGBT opens, now IGBT moves back saturated, and comparator inverts,
Fault-signal detected, the fault-signal monitored can be further processed simultaneously.
(2) the utility model has the advantage of that circuit is simple, only used two comparators and some are simple
Peripheral circuit i.e. achieves the detection moving back saturation during turning on IGBT, for opening process, increases
RC time delay is the most adjustable so that the misoperation in opening process will not occur.The most when off, stagnant ring is utilized
Comparison circuit cuts out comparison circuit in advance, effectively avoids misoperation during shutoff.Circuit occupied area is little,
Cost is relatively low.
Accompanying drawing explanation
In order to be illustrated more clearly that this utility model embodiment or technical scheme of the prior art and advantage, under
The accompanying drawing used required in embodiment or description of the prior art will be briefly described by face, it should be apparent that,
Accompanying drawing in describing below is only embodiments more of the present utility model, for those of ordinary skill in the art
From the point of view of, on the premise of not paying creative work, it is also possible to obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the circuit diagram of the IGBT over-current detection circuit that this utility model embodiment one provides；
Fig. 2 is the circuit diagram of the BUCK circuit that this utility model embodiment one provides；
Fig. 3 is the circuit diagram of the IGBT current foldback circuit that this utility model embodiment two provides.
In figure: 100-the first comparison circuit, 101-the first comparator, 200-the second comparison circuit, 201-second
Comparator, 300-sample circuit, 301-diode, 302-Zener diode, 400-IGBT control circuit, 500-
Voltage detection module, 600-control module.
Detailed description of the invention
Below in conjunction with the accompanying drawing in this utility model embodiment, to the technical side in this utility model embodiment
Case is clearly and completely described, it is clear that described embodiment is only that this utility model part is real
Execute example rather than whole embodiments.Based on the embodiment in this utility model, ordinary skill people
The every other embodiment that member is obtained on the premise of not making creative work, broadly falls into this practicality new
The scope of type protection.
Embodiment one:
Referring to Fig. 1, this utility model embodiment provides a kind of IGBT over-current detection circuit, including first
Comparison circuit the 100, second comparison circuit 200, sample circuit 300 and IGBT control circuit 400, wherein,
Described first comparison circuit 100 includes first comparator the 101, first resistance R1 and the second resistance R2,
First end of described first resistance R1 connects power supply, and second end of described first resistance R1 is electric with second respectively
First end of resistance R2 and the in-phase input end of described first comparator 101 connect；Described second resistance R2's
Second end ground connection, certainly, second end of described second resistance R2 can also connect other resistance or components and parts,
As long as ensure that first end of the second resistance R2 is default magnitude of voltage.
It should be noted that the first comparator 101 related in this utility model and the second comparator 201 are equal
Refer to voltage comparator.
Further, as preferred scheme, in order to prevent the shake of switching waveform at comparative level from producing by mistake
Action, described first comparison circuit is hysteresis comparison circuit, say, that described first comparison circuit 100
Also include the homophase of the 5th resistance R5, first end of described 5th resistance R5 and described first comparator 101
Input connects, and second end of described 5th resistance R5 is connected with the outfan of described first comparator 101.
Further, in order to ensure that the electric current of the first comparator 101 input will not be excessive, described first compares
Circuit 100 also includes the 3rd resistance R3 and the 4th resistance R4 for current limliting, and certainly, this area should
Solving, the 3rd resistance R3 and the 4th resistance R4 is not requisite, in actual application, if first
The input current of comparator 101 is the least, can be not provided with the 3rd resistance R3 and the 4th resistance R4.
First end of described 3rd resistance R3 is connected with the outfan of described IGBT control circuit 400, described
Second end of the 3rd resistance R3 is connected with the inverting input of described first comparator 101；Described 4th resistance
First end of R4 is connected with first end of described second resistance R2, second end of described 4th resistance R4 and institute
The in-phase input end stating the first comparator 101 connects.3rd resistance R3 and the 4th resistance R4 resistance can phases
With, and all resistances than described first resistance R1 and the second resistance R2 are several times greater.
Further, described first comparison circuit 100 also includes the first electric capacity C1, described first electric capacity C1
The first end ground connection, second end connect described first comparator 101 inverting input.
Described second comparison circuit 200 includes the second comparator the 201, the 6th resistance R6, the 7th resistance R7
With the 8th resistance R8, the outfan of described first comparator 101 connects with first end of described 6th resistance R6
Connecing, second end of described 6th resistance R6 compares with second end of described 7th resistance R7 and described second respectively
The inverting input of relatively device 201 connects, and first end of described 7th resistance R7 connects power supply, described second ratio
The relatively outfan of device 201 is connected with second end of described 8th resistance R8, the first of described 8th resistance R8
End connects power supply.
Described sample circuit 300 includes diode the 301, the 9th resistance R9, the tenth resistance R10 and the 11st
Resistance R11, the negative pole of described diode 301 is connected with the colelctor electrode of IGBT to be measured, described diode 301
Positive pole be connected with first end of described 9th resistance R9, described tenth resistance R10 first end connect power supply,
Second end of described tenth resistance R10 respectively with the second end and described 11st resistance of described 9th resistance R9
One end, ground of R11 connects, second end of described tenth resistance R10 and the homophase of described second comparator 201
Input connects；
Further, described diode 301 is Ultrafast recovery high-voltage diode.
Further, described sample circuit 300 also includes Zener diode 302, described Zener diode 302
Negative pole be connected with second end of described tenth resistance R10, the plus earth of described Zener diode 302.
Further, the second end ground connection of described 11st resistance R11.
For exporting the outfan of the described IGBT control circuit 400 of control signal respectively with IGBT's to be measured
The inverting input of grid and described first comparator 101 connects.Wherein, described IGBT control circuit 400
Controlling, for exporting, the driving voltage that IGBT to be measured switch opens and closes, it can be output low and high level
Pwm signal.
The size of IGBT grid positive drive voltage UGE will produce material impact to circuit performance, it is necessary to just
Really select.When positive drive voltage increases, the conducting resistance of IGBT declines, and makes turn-on consumption reduce；But
If positive drive voltage is excessive, during load short circuits, its short circuit current IC increases with UGE and increases, and may make
There is latching effect in IGBT, causes gate to lose efficacy, thus causes the damage of IGBT；If positive drive voltage
Too small meeting makes IGBT exit saturation conduction district and enter linear amplification region, makes IGBT cross cause thermal damage；Use
In select 12V≤UGE≤18V preferably.
In the present embodiment, the grounded emitter of IGBT to be measured switch, ground connection herein refers to the ground suspended,
A namely reference point of IGBT switch.
As in figure 2 it is shown, in a concrete application scenarios, the IGBT in the present embodiment is applied to BUCK
Circuit, now, the control circuit of IGBT is the colelctor electrode isoelectric level of PWM1, BUS+ and IGBT,
In IGBT over-current detection circuit, BUS+ is that the negative pole with above-mentioned diode 301 is connected.
In conjunction with in Fig. 1, Fig. 2, this example, the work process of IGBT over-current detection is as follows:
Power supply in the circuit of Fig. 1 and ground need the power supply with other control circuits and ground isolation, Fig. 1 and Fig. 2
In GND be same suspend ground, first comparison circuit 100 on Fig. 1 left side is a stagnant ring comparison circuit
Or referred to as hysteresis comparison circuit, it is therefore an objective to prevent the shake of switching waveform at comparative level from producing misoperation,
Comparative level can be+8.5V herein, can be [+7.1V ,+8.9V] between stagnant ring region.
The CL Compare Logic moving back saturation detection circuit is as shown in table 1.Wherein, PWM1 is the driving electricity of IGBT
Pressure, in Fig. 1, the voltage of A, B, C, D is as shown in table 1.
Table 1
| PWM1 | A | B | C | D |
| +15V | +8.5V | +6.4V | 4.7V | -15V |
| -15V | +8.5V | +15V | 4.7V | -15V |
| +15V | +8.5V | +6.4V | 8.8V | +15V |
| -15V | +8.5V | +15V | 8.8V | -15V |
The process that IGBT moves back saturation detection is as follows: opens period IGBT control circuit 400 at IGBT and exports
Can be the level of+15V, in Fig. 1, A point current potential be+8.5V, and left side comparator output-15V obtains B
The current potential of point is+6.4V.
If now IGBT moves back saturated entrance linear zone, then the BUS+ current potential relative to GND is rapid
Rising, when BUS+ current potential rises above+8.8V when, Ultrafast recovery high-voltage diode enters and reversely cuts
Only district, the optional STTA112U of model, the C point current potential of Ultrafast recovery high-voltage diode is+8.8V, the right
Second comparator 200 action, is output as high-impedance state, and D point current potential is essentially pulled up to+15V, the electricity of detection D point
It is saturated that position is just able to detect that whether IGBT moves back, and stream namely occurred.The work of Zener diode 302
With being to prevent high-voltage diode STTA112U from puncturing, damage comparison device, Zener diode is optional
BZD27C12P。
The IGBT provided for the present embodiment moves back saturated detection method, is equally applicable to multiple IGBT's
Application scenario, the such as IGBT of upper and lower bridge arm form move back saturation detection, it is only necessary to two are independent above-mentioned
IGBT over-current detection circuit just can reach detection purpose, it is noted that to ensure two circuit power supply and
Ground needs mutually isolated.
Embodiment two:
Refer to Fig. 3, present embodiments provide a kind of current foldback circuit based on IGBT, wherein, IGBT
Over-current detection circuit consistent with embodiment one, do not repeat them here, current foldback circuit also includes that voltage is examined
Survey module 500 and control module 600, described voltage detection module 500 respectively with described second comparator 201
Outfan and described control module 600 connect, the outfan of described control module 600 and described IGBT are controlled
The input of circuit 400 processed connects.Described voltage detection module 500 gathers the voltage of D point, control module
According to this voltage, 600 voltages obtaining voltage detection module 500 collection judge whether IGBT occurred stream,
Occurred to control IGBT control circuit during stream and turned off IGBT.Certainly, IGBT is moved back it is dealt in saturated fault
Need to carry out light-coupled isolation before voltage detection module 500 and control module 600.
The above is preferred implementation of the present utility model, it is noted that general for the art
For logical technical staff, on the premise of without departing from this utility model principle, it is also possible to make some improvement and
Retouching, these improvements and modifications are also considered as protection domain of the present utility model.
Claims (9)
1. an IGBT over-current detection circuit, it is characterised in that include the first comparison circuit (100),
Two comparison circuits (200), sample circuit (300) and IGBT control circuit (400), wherein,
Described first comparison circuit (100) includes the first comparator (101), the first resistance R1 and second electricity
Resistance R2, described first resistance R1 first end connect power supply, second end of described first resistance R1 respectively with
First end of the second resistance R2 and the in-phase input end of described first comparator (101) connect；
Described second comparison circuit (200) includes the second comparator (201), the 6th resistance R6, the 7th electricity
Resistance R7 and the 8th resistance R8, the outfan of described first comparator (101) is with described 6th resistance R6's
First end connects, second end of described 6th resistance R6 respectively with the second end and the institute of described 7th resistance R7
The inverting input stating the second comparator (201) connects, and first end of described 7th resistance R7 connects power supply,
The outfan of described second comparator (201) is connected with second end of described 8th resistance R8, and the described 8th
First end of resistance R8 connects power supply；
Described sample circuit (300) include diode (301), the 9th resistance R9, the tenth resistance R10 and
11st resistance R11, the negative pole of described diode (301) is connected with the colelctor electrode of IGBT to be measured, described
The positive pole of diode (301) is connected with first end of described 9th resistance R9, described tenth resistance R10's
First end connects power supply, second end of described tenth resistance R10 respectively with second end of described 9th resistance R9
And one end, ground of described 11st resistance R11 connects, second end and described second of described tenth resistance R10
The in-phase input end of comparator (201) connects；
For export the outfan of the described IGBT control circuit (400) of control signal respectively with IGBT to be measured
Grid and described first comparator (101) inverting input connect.
IGBT over-current detection circuit the most according to claim 1, it is characterised in that described first ratio
Relatively circuit (100) also includes that the 5th resistance R5, first end of described 5th resistance R5 compare with described first
The in-phase input end of device (101) connects, second end of described 5th resistance R5 and described first comparator (101)
Outfan connect.
IGBT over-current detection circuit the most according to claim 1 and 2, it is characterised in that described
One comparison circuit (100) also includes the of the 3rd resistance R3 and the 4th resistance R4, described 3rd resistance R3
One end is connected with the outfan of described IGBT control circuit (400), second end of described 3rd resistance R3
It is connected with the inverting input of described first comparator (101)；First end of described 4th resistance R4 and institute
The first end stating the second resistance R2 connects, second end of described 4th resistance R4 and described first comparator
(101) in-phase input end connects.
IGBT over-current detection circuit the most according to claim 1, it is characterised in that described first ratio
Relatively circuit (100) also includes the first electric capacity C1, the first end ground connection of described first electric capacity C1, and the second end is even
Connect the inverting input of described first comparator (101).
IGBT over-current detection circuit the most according to claim 1, it is characterised in that described second electricity
The second end ground connection of resistance R2.
IGBT over-current detection circuit the most according to claim 1, it is characterised in that described diode
(301) it is Ultrafast recovery high-voltage diode.
IGBT over-current detection circuit the most according to claim 6, it is characterised in that described sampling electricity
Road (300) also includes Zener diode (302), the negative pole of described Zener diode (302) and described the
Second end of ten resistance R10 connects, the plus earth of described Zener diode (302).
IGBT over-current detection circuit the most according to claim 6, it is characterised in that the described 11st
The second end ground connection of resistance R11.
9. an IGBT based on described IGBT over-current detection circuit arbitrary in claim 1-8 crosses stream
Protection circuit, it is characterised in that also include voltage detection module (500) and control module (600), described
Voltage detection module (500) respectively with outfan and the described control module of described second comparator (201)
(600) connect, the outfan of described control module (600) and described IGBT control circuit (400)
Input connects.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201620238880.0U CN205545179U (en) | 2016-03-25 | 2016-03-25 | IGBT overflows detection circuitry and current foldback circuit |
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| CN201620238880.0U CN205545179U (en) | 2016-03-25 | 2016-03-25 | IGBT overflows detection circuitry and current foldback circuit |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106385009A (en) * | 2016-11-30 | 2017-02-08 | 东南大学 | Shaping protection circuit applied to IGBT |
| CN107181396A (en) * | 2017-05-05 | 2017-09-19 | 北京精密机电控制设备研究所 | A kind of paralleling MOS Guan Junliu and short-circuit protection circuit |
| CN108896899A (en) * | 2018-07-23 | 2018-11-27 | 广东志高暖通设备股份有限公司 | A kind of integrated switch pipe over-current detection circuit |
| CN110632486A (en) * | 2018-06-06 | 2019-12-31 | 北京平高清大科技发展有限公司 | Disassembly-free detection device for IGBT power unit |
| CN111273073A (en) * | 2020-03-31 | 2020-06-12 | 吉林华微电子股份有限公司 | IGBT chip and semiconductor power module |
| CN112688585A (en) * | 2020-12-30 | 2021-04-20 | 东风汽车有限公司 | Inverter control method, storage medium, and electronic device |
| CN113595536A (en) * | 2021-06-17 | 2021-11-02 | 许继集团有限公司 | IGBT active overcurrent protection device and protection method |
| CN118487234A (en) * | 2024-07-16 | 2024-08-13 | 成都英杰晨晖科技有限公司 | Grid protection circuit of power device and protection method thereof |
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- 2016-03-25 CN CN201620238880.0U patent/CN205545179U/en active Active
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106385009A (en) * | 2016-11-30 | 2017-02-08 | 东南大学 | Shaping protection circuit applied to IGBT |
| CN107181396A (en) * | 2017-05-05 | 2017-09-19 | 北京精密机电控制设备研究所 | A kind of paralleling MOS Guan Junliu and short-circuit protection circuit |
| CN107181396B (en) * | 2017-05-05 | 2019-06-18 | 北京精密机电控制设备研究所 | A kind of paralleling MOS Guan Junliu and short-circuit protection circuit |
| CN110632486A (en) * | 2018-06-06 | 2019-12-31 | 北京平高清大科技发展有限公司 | Disassembly-free detection device for IGBT power unit |
| CN108896899A (en) * | 2018-07-23 | 2018-11-27 | 广东志高暖通设备股份有限公司 | A kind of integrated switch pipe over-current detection circuit |
| CN111273073A (en) * | 2020-03-31 | 2020-06-12 | 吉林华微电子股份有限公司 | IGBT chip and semiconductor power module |
| CN111273073B (en) * | 2020-03-31 | 2022-05-20 | 吉林华微电子股份有限公司 | IGBT chip and semiconductor power module |
| CN112688585A (en) * | 2020-12-30 | 2021-04-20 | 东风汽车有限公司 | Inverter control method, storage medium, and electronic device |
| CN113595536A (en) * | 2021-06-17 | 2021-11-02 | 许继集团有限公司 | IGBT active overcurrent protection device and protection method |
| CN118487234A (en) * | 2024-07-16 | 2024-08-13 | 成都英杰晨晖科技有限公司 | Grid protection circuit of power device and protection method thereof |
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