CN205385041U - All -angle luminous light -emitting diode (LED) light source - Google Patents
All -angle luminous light -emitting diode (LED) light source Download PDFInfo
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- CN205385041U CN205385041U CN201620121195.XU CN201620121195U CN205385041U CN 205385041 U CN205385041 U CN 205385041U CN 201620121195 U CN201620121195 U CN 201620121195U CN 205385041 U CN205385041 U CN 205385041U
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- wavelength conversion
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- chip
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 31
- 239000010410 layer Substances 0.000 claims description 55
- 239000000463 material Substances 0.000 claims description 17
- 230000001681 protective effect Effects 0.000 claims description 13
- 239000011241 protective layer Substances 0.000 claims description 10
- 239000000084 colloidal system Substances 0.000 claims description 8
- 239000003822 epoxy resin Substances 0.000 claims description 5
- 229920000647 polyepoxide Polymers 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 239000000741 silica gel Substances 0.000 claims description 4
- 229910002027 silica gel Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000002002 slurry Substances 0.000 description 17
- 238000004020 luminiscence type Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 239000004568 cement Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The utility model discloses an all -angle luminous light -emitting diode (LED) light source, including support, chip and wavelength conversion layer, the support includes plane main part and two pins, the chip sets firmly and links to each other at the up end of plane main part and through bonding line and two pins, plane main part top covers there is wavelength conversion layer to make chip package in wavelength conversion layer, two pins respectively with the power just, the negative pole is connected. Cancel the reflection cup, fixed the chip in the main part of plane, improved the smooth angle that arouses greatly, can bring up to the launch angle of light about 250, and solved phenomenons such as the thin light ring uniformity that causes of cover small thickness of wavelength conversion layer on the chip is poor, colour temperature deviation, improved the uniformity of light ring, not only eliminated the shade, the colour temperature is more even moreover.
Description
Technical field
This utility model relates to a kind of LED light source.
Background technology
Core luminous for LED is the PN junction tube core being made up of P type and N-type semiconductor, when the minority carrier and the majority carrier compound tense that inject PN junction, is issued by visible ray, ultraviolet or near infrared light.But it is nondirectional that PN junction area launches photon, namely each direction is launched identical probability, but is not that all light that tube core produces can discharge, and this depends primarily on the quality of semi-conducting material, the structure of tube core, geometry, encapsulation internal structure and encapsulating material.
Current LED illuminating source includes light-emitting diode chip for backlight unit 1 ', light-emitting diode chip for backlight unit is arranged in reflector 2 ', reflector is installed on support 3 ', light-emitting diode chip for backlight unit is connected with two pins 5 ' on support by bonding line 4 ', light-emitting diode chip for backlight unit, reflector and portion support are coated with wavelength conversion layer 6 ', two pin lower ends pass wavelength conversion layer, as shown in Figure 1.This LED illuminating source is subject to the impact of support, reflector and mould bar angle, so that its lighting angle is below 130 °, light diffusion angle is limited, and light does not reach back, and can form shadow.Additionally due also to the impact of reflector size, cover the thinner thickness of wavelength conversion layer on light emitting diode chip, small volume, in process of production, it is easier appearance sedimentation, disperses the phenomenons such as uneven, the phenomenons such as the concordance further resulting in aperture is poor, colour temperature deviation.
Summary of the invention
In order to solve above-mentioned the deficiencies in the prior art, the purpose of this utility model is to provide the LED light source that a kind of full angle is luminous, not only can improve the diffusion angle of light, it is also possible to improving the concordance of aperture, colour temperature is evenly.
To achieve these goals, the LED light source that a kind of full angle designed by this utility model is luminous, including support, chip and wavelength conversion layer, described support includes planar body and two pins, described chip is installed in the upper surface of planar body and is connected by bonding line and two pins, being coated with wavelength conversion layer above described planar body, so that chip package is in wavelength conversion layer, said two pin is connected with the positive and negative electrode of power supply respectively.
Further, described wavelength conversion layer is connected with supporting layer, and described planar body portion is encapsulated in supporting layer.
Further, described supporting layer is the colloid without fluorescent material.
Further, also including a protective clear layer, be coated on the outside of planar body, part pin and wavelength conversion layer, said two pin lower end passes protective clear layer.
Further, described protective clear layer is transparent silica gel protective layer, transparent silicon resin protective layer or transparent epoxy resin protective layer.
Further, described wavelength conversion layer contacts the length of one end more than the length of planar body with planar body.
Further, the length of described supporting layer is more than the length of planar body.
The preparation method of the LED light source that above-mentioned full angle is luminous, comprises the following steps:
(1), chip is fixed on the planar body upper surface of support by the bonding baking of insulating cement；
(2), the both positive and negative polarity of chip is connected with the positive and negative pin of support respectively by ultrasonic wire welding machine with bonding line；
(3), under vacuum, fluorescent material, spread powder and colloid are uniformly mixed and obtain slurry, by this slurry by automatic glue filling machine embedding to embedding mould bar, until there is upper lower leaf in the slurry in embedding mould bar, upper strata is the slurry without fluorescent material, and lower floor is the slurry containing fluorescent material；
(4), being inserted in the mould bar in step (3) by the support in step (2), chassis plane main body upper end and chip are immersed in lower floor's slurry, and the planar body portion of support is immersed in the slurry of upper strata；
(5), baking-curing, the demoulding；
(6), the LED light source in step (5) is placed in the mould being filled with protective clear layer material solution, the then baking-curing demoulding；
(7), the LED light source in step (6) is toasted again.
Wherein, the solidification temperature in described step (5), (6) is 100-130 DEG C, is 1h hardening time, and the baking temperature in described step (7) is 130 DEG C, and baking time is 8h.
Described protective clear layer material solution is silica gel solution, silicon resin solution or epoxy resin solution.
The LED light source that a kind of full angle that this utility model obtains is luminous, it has the technical effect that 1, eliminates reflector, and is fixed in planar body by chip, and what substantially improve light excites angle, the transmitting angle of light can be brought up to about 250 °, such that it is able to realize full angle luminescence；2, solve phenomenons such as covering poor, the colour temperature deviation of the aperture concordance that on chip, the little thickness of wavelength conversion layer volume is thin caused, improve the concordance of aperture, not only eliminate shade, and colour temperature is evenly；3, be not coated on chip back due to wavelength conversion layer, namely will not produce due to light irradiate less than cannot the mottle that causes of excitated fluorescent powder, aperture concordance is better；4, add efficiency of giving out light, improve luminous flux.
Accompanying drawing explanation
Fig. 1 is LED light source structural representation of the prior art.
Fig. 2 is the LED light source structural representation in this utility model.
Detailed description of the invention
Below in conjunction with drawings and Examples, this utility model is further illustrated.
As shown in Figure 2, the LED light source that the full angle that this utility model provides is luminous, including support 1, chip 2 and wavelength conversion layer 3, described support includes planar body 11 and two pins 12, described chip is installed in the upper surface of planar body and is connected with two pins by bonding line 4, being coated with wavelength conversion layer 3 above described planar body, so that chip package is in wavelength conversion layer, said two pin is connected with the positive and negative electrode of power supply respectively.
In the present embodiment, what LED light source produced is white light, and what therefore adopt is blue-light LED chip.It is of course also possible to adopt the LED chip of other color of light, and final LED light source can also be the light source of other colors.
Owing to eliminating reflector, and being installed in by chip on planar body upper surface, what substantially improve light excites angle, and through substantial amounts of theoretical modeling and actually detected, the transmitting angle of light can bring up to about 250 °, thus realizing full angle luminescence；And not having reflector, it is possible to making the thickness covering the wavelength conversion layer on chip reach certain thickness, volume is also sufficiently large, thus eliminating shade, and colour temperature is also evenly.
For the angle that excites of more effective expansion light, described wavelength conversion layer contacts the length of one end more than the length of planar body with planar body.
In order to wavelength conversion layer is supported, keeping certain intensity, described wavelength conversion layer to be connected with supporting layer 5, described planar body portion is encapsulated in supporting layer.In the present embodiment, described supporting layer is the colloid without fluorescent material, is transparent colloid.The colloid containing fluorescent material is adopted to prepare supporting layer, owing to supporting layer is positioned at chip back, it is impossible to the fluorescent material in supporting layer is excited, causing that aperture produces mottle, the concordance of aperture is poor, and adopts the colloid without fluorescent material, the problem that would not produce mottle, the concordance of aperture is good.
For better support to wavelength conversion layer, the length of supporting course can contact with planar body be more than or equal to wavelength conversion layer the length of one end, and certainly, the length of described supporting layer is more than the length of planar body.
Also including a protective clear layer 6, be coated on the outside of planar body 11, part pin and wavelength conversion layer 3, said two pin lower end passes protective clear layer.Described protective clear layer is transparent silica gel protective layer, transparent silicon resin protective layer or transparent epoxy resin protective layer.In the present embodiment, protective clear layer is transparent epoxy resin protective layer.
The LED light source of above-mentioned full angle luminescence is prepared by following steps, and its concrete preparation process is:
(1), chip is fixed on the planar body upper surface of support by the bonding baking of insulating cement；
(2), the both positive and negative polarity of chip is connected with the positive and negative pin of support respectively by ultrasonic wire welding machine with bonding line；
(3), under vacuum, fluorescent material, spread powder and colloid are uniformly mixed and obtain slurry, by this slurry by automatic glue filling machine embedding to embedding mould bar, until there is upper lower leaf in the slurry in embedding mould bar, upper strata is the slurry without fluorescent material, and lower floor is the slurry containing fluorescent material；
(4), the support in step (2) is inserted in the mould bar in step (3), chassis plane main body upper end and chip are immersed in lower floor's slurry, the planar body portion of support is immersed in the slurry of upper strata, owing to LED chip has certain thickness, full angle in order to better play LED light source is luminous, the planar body upper end two side portions of support is positioned at lower floor's slurry, and the thickness that is positioned at the chassis plane main body of lower floor's slurry is relevant to the thickness of chip, the light that namely chip sends can be irradiated to scope and be respectively positioned in the slurry containing fluorescent material；
(5), baking-curing, the demoulding, wherein solidification temperature is 100-130 DEG C, and hardening time is 1h；
(6), the LED light source in step (5) is placed in the mould being filled with protective clear layer material solution, the then baking-curing demoulding, wherein solidification temperature is 100-130 DEG C, and hardening time is 1h:；
(7), the LED light source in step (6) is toasted at 130 DEG C 8h.
By the LED light source that above-mentioned preparation method prepares, it launches angle can bring up to about 250 °, and the concordance of aperture is good, and shadow-free, colour temperature is evenly.
Claims (7)
1. the LED light source that a full angle is luminous, including support, chip and wavelength conversion layer, it is characterized in that: described support includes planar body and two pins, described chip is installed in the upper surface of planar body and is connected by bonding line and two pins, it is coated with wavelength conversion layer above described planar body, so that chip package is in wavelength conversion layer, said two pin is connected with the positive and negative electrode of power supply respectively.
2. the LED light source that full angle according to claim 1 is luminous, it is characterised in that: described wavelength conversion layer is connected with supporting layer, and described planar body portion is encapsulated in supporting layer.
3. the LED light source that full angle according to claim 2 is luminous, it is characterised in that: described supporting layer is the colloid without fluorescent material.
4. according to the LED light source that the arbitrary described full angle of claim 1-3 is luminous, it is characterised in that: also including a protective clear layer, be coated on the outside of planar body, part pin and wavelength conversion layer, said two pin lower end passes protective clear layer.
5. the LED light source that full angle according to claim 4 is luminous, it is characterised in that: described protective clear layer is transparent silica gel protective layer, transparent silicon resin protective layer or transparent epoxy resin protective layer.
6. the LED light source that full angle according to claim 1 is luminous, it is characterised in that: described wavelength conversion layer contacts the length of one end more than the length of planar body with planar body.
7. the LED light source that full angle according to claim 2 is luminous, it is characterised in that: the length of described supporting layer is more than the length of planar body.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620121195.XU CN205385041U (en) | 2016-02-01 | 2016-02-01 | All -angle luminous light -emitting diode (LED) light source |
| GB1615155.7A GB2546846B (en) | 2016-02-01 | 2016-09-07 | LED light source capable of emitting light |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620121195.XU CN205385041U (en) | 2016-02-01 | 2016-02-01 | All -angle luminous light -emitting diode (LED) light source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN205385041U true CN205385041U (en) | 2016-07-13 |
Family
ID=56349771
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201620121195.XU Active CN205385041U (en) | 2016-02-01 | 2016-02-01 | All -angle luminous light -emitting diode (LED) light source |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN205385041U (en) |
| GB (1) | GB2546846B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105552199A (en) * | 2016-02-01 | 2016-05-04 | 浙江双宇电子科技有限公司 | All-angle luminous LED light source and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MY145695A (en) * | 2001-01-24 | 2012-03-30 | Nichia Corp | Light emitting diode, optical semiconductor device, epoxy resin composition suited for optical semiconductor device, and method for manufacturing the same |
| EP2822047A4 (en) * | 2012-08-31 | 2015-03-18 | Panasonic Ip Man Co Ltd | Light-emitting apparatus |
-
2016
- 2016-02-01 CN CN201620121195.XU patent/CN205385041U/en active Active
- 2016-09-07 GB GB1615155.7A patent/GB2546846B/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105552199A (en) * | 2016-02-01 | 2016-05-04 | 浙江双宇电子科技有限公司 | All-angle luminous LED light source and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| GB201615155D0 (en) | 2016-10-19 |
| GB2546846B (en) | 2019-05-15 |
| GB2546846A (en) | 2017-08-02 |
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| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |