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CN204391226U - A kind of microstrip line based on ground connection blind hole-strip line transformational structure - Google Patents

A kind of microstrip line based on ground connection blind hole-strip line transformational structure Download PDF

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Publication number
CN204391226U
CN204391226U CN201420713234.6U CN201420713234U CN204391226U CN 204391226 U CN204391226 U CN 204391226U CN 201420713234 U CN201420713234 U CN 201420713234U CN 204391226 U CN204391226 U CN 204391226U
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CN
China
Prior art keywords
metal level
layer
strip line
line
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201420713234.6U
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Chinese (zh)
Inventor
张国忠
徐晓宁
李伟
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Leihua Electronic Technology Research Institute Aviation Industry Corp of China
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Leihua Electronic Technology Research Institute Aviation Industry Corp of China
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Priority to CN201420713234.6U priority Critical patent/CN204391226U/en
Application granted granted Critical
Publication of CN204391226U publication Critical patent/CN204391226U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

This patent belongs to microwave circuits technology, provides a kind of microstrip line based on ground connection blind hole-strip line transformational structure, and structure is simple, flexible design, easily and other are passive and active circuit is integrated.Technical scheme comprises: the first metal layer stacked gradually from top to bottom, first medium layer, the second metal level, second dielectric layer, the 3rd metal level; Wherein the first metal layer and first medium layer are structure as a whole, and bonding with prepreg between first medium layer with the second metal level, the second metal level, second dielectric layer, the 3rd metal level are structure as a whole.

Description

A kind of microstrip line based on ground connection blind hole-strip line transformational structure
Technical field
This patent belongs to microwave circuits technology, is a kind of practicality microwave circuit transformational structure.
Background technology
Along with the demand that radar and communications equipment is day by day miniaturized, in the guaranteed situation of the index of various device, want the EMC Requirements of summation module more and more higher to various device volume.In current circuit design process, the design of micro-band plate, strip-line circuit is widely used, and micro-band plate simplicity of design, is easy to active with other, passive circuit is integrated; The passive circuit of strip lines configuration has the advantages such as volume is little, Q value is high, Electro Magnetic Compatibility is good, if realize Wei Dai Xian ?strip line change and provide very high flexibility by into circuit design.These provide good technical foundation for we realize some function.
Summary of the invention
Goal of the invention: provide a kind of microstrip line based on ground connection blind hole-strip line transformational structure, structure is simple, flexible design, easily and other are passive and active circuit is integrated.
Technical scheme:
Based on microstrip line-strip line transformational structure of ground connection blind hole, comprising:
The first metal layer stacked gradually from top to bottom, first medium layer, the second metal level, second dielectric layer, the 3rd metal level;
Wherein the first metal layer and first medium layer are structure as a whole, and bonding with prepreg between first medium layer with the second metal level, the second metal level, second dielectric layer, the 3rd metal level are structure as a whole.
Wherein, described the first metal layer is copper clad layers;
First medium layer comprises the dielectric-slab on top and the prepreg of bottom;
Second metal level comprises microstrip line, strip line and four metalized blind vias;
Second dielectric layer is dielectric-slab;
3rd metal level is copper clad layers;
Wherein strip line is between first medium layer and second dielectric layer;
Wherein four metalized blind vias are the blind hole from the second metal level to the 3rd metal level, and the diameter in hole is 0.25mm, appears at the both sides of strip line with paired form, and often pair of metalized blind vias line of centres becomes 36 degree of angles with the center line of microstrip line-strip line.
Beneficial effect:
(1) microstrip line and strip line are at grade, when changing without the need to via hole, realize the conversion of microstrip line and strip line.
(2) by adding ground connection blind hole in the transformational structure both sides of microstrip line and strip line, ground connection blind hole appears at the both sides of strip line with paired form, the center line of often pair of plated-through hole line of centres and microstrip line-strip line has a certain degree, and realizes the better standing wave of input/output terminal.
(3) processing cost is low.
(4) simple, the volume little Yi of structure and other are passive, active circuit is integrated.
Accompanying drawing explanation
Fig. 1 is explosion perspective view of the present utility model.
Fig. 2 is vertical view of the present utility model.
Fig. 3 be the utility model second metal level overlook close-up schematic view.
Fig. 4 be the metalized blind vias line of centres of the present utility model have a certain degree with microstrip line axis, parallel time simulation result compare schematic diagram.
Embodiment
Below in conjunction with the drawings and specific embodiments, the utility model is described further:
As shown in Figure 1, 2, 3, a kind of microstrip line-strip line transformational structure, comprises the first metal layer 1, first medium layer 2, second metal level 3, second dielectric layer 4, the 3rd metal level 5 that stack gradually from top to bottom.
Wherein the first metal layer 1 and first medium layer 2 are structure as a whole, and bonding with prepreg between first medium layer 2 with the second metal level 3, the second metal level 3, second dielectric layer 4, the 3rd metal level 5 are structure as a whole.
Described the first metal layer 1 is copper clad layers.
Wherein first medium layer 2 comprises dielectric-slab and prepreg.
Second metal level 3 comprises microstrip line 31, strip line 32 and four metalized blind vias 33.
Second dielectric layer 4 is dielectric-slab.
3rd metal level 5 is copper clad layers.
Wherein strip line 32 is between first medium layer 3 and second dielectric layer 4.
Wherein four plated-through holes 33 are the blind hole from the second metal level 3 to the three metal level 5, the diameter in hole is 0.25mm, it appears at the both sides of strip line with paired form, the often pair of plated-through hole line of centres and microstrip line 31 ?the center line of strip line 32 become 36 degree of angles.
Fig. 4 be the metalized blind vias line of centres of the present utility model have a certain degree with microstrip line axis, parallel time simulation result compare schematic diagram.
These are only the utility model preferred embodiment, not in order to limit the utility model, all make within spirit of the present utility model and principle any amendment, equivalent to replace and improvement etc., all should be included within protection range of the present utility model.

Claims (2)

1., based on a micro-band line ?strip line transformational structure for ground connection blind hole, it is characterized in that, comprising:
The first metal layer stacked gradually from top to bottom, first medium layer, the second metal level, second dielectric layer, the 3rd metal level;
Wherein the first metal layer and first medium layer are structure as a whole, and bonding with prepreg between first medium layer with the second metal level, the second metal level, second dielectric layer, the 3rd metal level are structure as a whole.
2. as claimed in claim 1 a kind of Wei Dai Xian based on ground connection blind hole ?strip line transformational structure, it is characterized in that,
Described the first metal layer is copper clad layers;
First medium layer comprises the dielectric-slab on top and the prepreg of bottom;
Second metal level comprises microstrip line, strip line and four metalized blind vias;
Second dielectric layer is dielectric-slab;
3rd metal level is copper clad layers;
Wherein strip line is between first medium layer and second dielectric layer;
Wherein four metalized blind vias are the blind hole from the second metal level to the 3rd metal level, and the diameter in hole is 0.25mm, appears at the both sides of strip line with paired form, the often pair of metalized blind vias line of centres and Wei Dai Xian ?the center line of strip line become 36 degree of angles.
CN201420713234.6U 2014-11-24 2014-11-24 A kind of microstrip line based on ground connection blind hole-strip line transformational structure Expired - Fee Related CN204391226U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201420713234.6U CN204391226U (en) 2014-11-24 2014-11-24 A kind of microstrip line based on ground connection blind hole-strip line transformational structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201420713234.6U CN204391226U (en) 2014-11-24 2014-11-24 A kind of microstrip line based on ground connection blind hole-strip line transformational structure

Publications (1)

Publication Number Publication Date
CN204391226U true CN204391226U (en) 2015-06-10

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201420713234.6U Expired - Fee Related CN204391226U (en) 2014-11-24 2014-11-24 A kind of microstrip line based on ground connection blind hole-strip line transformational structure

Country Status (1)

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CN (1) CN204391226U (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110459850A (en) * 2019-08-26 2019-11-15 苏州浪潮智能科技有限公司 A kind of additional structure and imitative strip line of microwire band
CN111769348A (en) * 2020-06-12 2020-10-13 中国船舶重工集团公司第七二四研究所 Transition structure of asymmetric strip line and microstrip line

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110459850A (en) * 2019-08-26 2019-11-15 苏州浪潮智能科技有限公司 A kind of additional structure and imitative strip line of microwire band
CN111769348A (en) * 2020-06-12 2020-10-13 中国船舶重工集团公司第七二四研究所 Transition structure of asymmetric strip line and microstrip line
CN111769348B (en) * 2020-06-12 2021-09-24 中国船舶重工集团公司第七二四研究所 Transition structure of asymmetric strip line and microstrip line

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C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150610

Termination date: 20201124