CN204385319U - A kind of horizontal zone melting polycrystalline silicon ingot or purifying furnace - Google Patents
A kind of horizontal zone melting polycrystalline silicon ingot or purifying furnace Download PDFInfo
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- CN204385319U CN204385319U CN201420871908.5U CN201420871908U CN204385319U CN 204385319 U CN204385319 U CN 204385319U CN 201420871908 U CN201420871908 U CN 201420871908U CN 204385319 U CN204385319 U CN 204385319U
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- crucible
- heater
- zone melting
- horizontal zone
- polycrystalline silicon
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Abstract
The utility model discloses a kind of horizontal zone melting polycrystalline silicon ingot or purifying furnace, comprise body of heater shell, crucible, crucible supporting and well heater, described crucible is arranged in crucible supporting, fixing thermal insulation layer is provided with in described body of heater shell, described crucible and crucible supporting are positioned at fixing thermal insulation layer, described crucible is the long strip shape crucible that length is greater than width, corresponding described crucible supporting is also long strip shape, described well heater is the traveling heater that the outside being arranged on crucible and crucible supporting can move horizontally along crucible length direction, and the hot face length of described traveling heater is less than the length of crucible, the mobile thermal insulation layer that described traveling heater arranged outside has one deck therewith to move horizontally.Described horizontal zone melting polycrystalline silicon ingot or purifying furnace, achieve silicon raw material horizontal zone melting, grain-size is easily grown up, and easily obtains accurate monocrystalline, also can produce N-type quasi-monocrystalline silicon under certain condition, and portion's heating, energy consumption is reduced, greatly reduces cost.
Description
Technical field
The utility model relates to polycrystalline silicon ingot casting technical field, particularly relates to a kind of horizontal zone melting polycrystalline silicon ingot or purifying furnace.
Background technology
Polysilicon adopts the method for directional freeze to obtain.Widely used equipment is ingot furnace.Its principle is melted in crucible by silicon raw material.By controlling the difference of the temperature of crucible bottom temperature and melt upper surface, make melt first crystallization in bottom, then make crystallization upwards slowly extend, until all melts solidifies, whole congealed solid is called polycrystalline silicon ingot casting or crystal ingot, the heater of traditional polycrystalline ingot furnace is in crucible top and side, and move up and down, there is crystal growth apart from short in this polycrystalline ingot furnace, crystalline size is little, and well heater and thermal insulation layer size are comparatively large, production cost higher etc. problem.
Utility model content
The purpose of this utility model is the horizontal zone melting polycrystalline silicon ingot or purifying furnace providing a kind of silicon raw material horizontal zone melting realized in crucible.
For achieving the above object, the utility model provides following technical scheme:
A kind of horizontal zone melting polycrystalline silicon ingot or purifying furnace, comprise body of heater shell, crucible, crucible supporting and well heater, described crucible is arranged in crucible supporting, fixing thermal insulation layer is provided with in described body of heater shell, described crucible and crucible supporting are positioned at fixing thermal insulation layer, described crucible is the long strip shape crucible that length is greater than width, corresponding described crucible supporting is also long strip shape, described well heater is the traveling heater that the outside being arranged on crucible and crucible supporting can move horizontally along crucible length direction, and the hot face length of described traveling heater is less than the length of crucible, the mobile thermal insulation layer that described traveling heater arranged outside has one deck to move horizontally together with traveling heater.
As further program of the utility model: described body of heater shell comprises the upper and lower shell of sealing, be provided with one deck in described upper and lower shell and fix thermal insulation layer.
As further program of the utility model: described crucible is quartz ceramic crucible.
As further program of the utility model: the length of described crucible is 2500mm, wide be 400mm and highly be 500mm.
As further program of the utility model: described crucible supporting adopts graphite material to make.
The beneficial effects of the utility model are: described horizontal zone melting polycrystalline silicon ingot or purifying furnace, and adopt the crucible of long strip shape, the hot face length due to traveling heater is far smaller than the length of crucible.So traveling heater and thermal insulation layer only cover local crucible, and traveling heater can be moved horizontally to the other end from one end of the length direction of crucible, realize the silicon raw material horizontal zone melting in crucible, because solid-liquid interface miles of relative movement is long, grain-size is easily grown up, so easily obtain accurate monocrystalline; And during horizontal zone melting, doped element is set by distribution in advance in silicon raw material, likely obtains N-type mono-like silicon ingot; In addition, due to local heating, energy consumption is reduced, thermal field loss reduces, and directly causes cost greatly to reduce.
Accompanying drawing explanation
The sectional view of the horizontal zone melting polycrystalline silicon ingot or purifying furnace that Fig. 1 provides for the utility model.
In figure: 1, body of heater shell; 2, quartz ceramic crucible; 3, plumbago crucible supports; 4, fixing thermal insulation layer; 5, traveling heater; 6, mobile thermal insulation layer; 7, silicon raw material; 8, molten bath; 9, polysilicon.
Embodiment
The technical solution of the utility model is further illustrated by embodiment below in conjunction with accompanying drawing.
Refer to Fig. 1, described horizontal zone melting polycrystalline silicon ingot or purifying furnace comprises body of heater shell 1, quartz ceramic crucible 2, plumbago crucible supports 3 and traveling heater 5, described body of heater shell 1 comprises in sealing, lower furnace body, on described, be provided with one deck in lower furnace body and fix thermal insulation layer 4, described quartz ceramic crucible 2 is placed in the plumbago crucible arranged in body of heater shell 1 and supports on 3, and described quartz ceramic crucible 2 and plumbago crucible support 3 be placed in described fixing thermal insulation layer 4, described quartz ceramic crucible 2 is long 2600mm, wide for 400mm with highly for the bottom surface of 500mm is rectangular crucible, the bottom surface of the described plumbago crucible support 3 coordinated also is rectangle, described traveling heater 5 is provided with the outside at quartz ceramic crucible 2 and plumbago crucible support 3, and it is left along quartz ceramic crucible 2, the right side moves horizontally, the length of the hot face of described traveling heater 5 is far smaller than the length that plumbago crucible supports 3, traveling heater can only support 3 by cover part plumbago crucible, described traveling heater 5 arranged outside has one deck upper left at quartz ceramic crucible 2 with traveling heater 5, the mobile thermal insulation layer 6 that the right side moves horizontally.
When described horizontal zone melting polycrystalline silicon ingot or purifying furnace uses, silicon raw material 7 is placed in quartz ceramic crucible 2, and traveling heater 5 and mobile thermal insulation layer 6 are set to the low order end of quartz ceramic crucible 2, again by upper furnace body lid on lower furnace body, body of heater shell 1 and fixing thermal insulation layer 4 are sealed up, starts traveling heater 5 and heat, make in quartz ceramic crucible 2, to form molten bath 8, local, drive described traveling heater 5 and mobile thermal insulation layer 6 to be moved to the left, molten bath 8 is and then moved to the left together simultaneously.The melt shifting out heating zone gradually constantly solidifies and forms polysilicon 9.The silicon raw material 7 moving into heating zone constantly melts, finally move on to high order end, silicon raw material 7 used is all melted, closing traveling heater 5 makes last part silicon raw material 7 be frozen into polysilicon 9, form polycrystal silicon ingot, if and at the silicon raw material 7 be placed in quartz ceramic crucible 2, doped element is set by calculating distribution in advance, likely obtain the N-type mono-like silicon ingot that photoelectric transformation efficiency is higher.
Below only with embodiment, the utility model is illustrated, but the utility model is not limited to above-mentioned size and outward appearance illustration, more should form any restriction of the present utility model.As long as any improvement do the utility model or modification all belong within the protection domain of the utility model claim opinion.
Claims (5)
1. a horizontal zone melting polycrystalline silicon ingot or purifying furnace, comprise body of heater shell, crucible, crucible supporting and well heater, described crucible is arranged in crucible supporting, it is characterized in that: in described body of heater shell, be provided with fixing thermal insulation layer, described crucible and crucible supporting are positioned at fixing thermal insulation layer, described crucible is the long strip shape crucible that length is greater than width, corresponding described crucible supporting is also long strip shape, described well heater is the traveling heater that the outside being arranged on crucible and crucible supporting can move horizontally along crucible length direction, and the hot face length of described traveling heater is less than the length of crucible, the mobile thermal insulation layer that described traveling heater arranged outside has one deck to move horizontally together with traveling heater.
2. horizontal zone melting polycrystalline silicon ingot or purifying furnace according to claim 1, is characterized in that: described body of heater shell comprises the upper and lower shell of sealing, is provided with one deck and fixes thermal insulation layer in described upper and lower shell.
3. horizontal zone melting polycrystalline silicon ingot or purifying furnace according to claim 1, is characterized in that: described crucible is quartz ceramic crucible.
4. horizontal zone melting polycrystalline silicon ingot or purifying furnace according to claim 1 and 2, is characterized in that: the length of described crucible is 2600mm, wide be 400mm and highly be 500mm.
5. horizontal zone melting polycrystalline silicon ingot or purifying furnace according to claim 1, is characterized in that: described crucible supporting adopts graphite material to make.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420871908.5U CN204385319U (en) | 2014-12-31 | 2014-12-31 | A kind of horizontal zone melting polycrystalline silicon ingot or purifying furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420871908.5U CN204385319U (en) | 2014-12-31 | 2014-12-31 | A kind of horizontal zone melting polycrystalline silicon ingot or purifying furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204385319U true CN204385319U (en) | 2015-06-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420871908.5U Expired - Fee Related CN204385319U (en) | 2014-12-31 | 2014-12-31 | A kind of horizontal zone melting polycrystalline silicon ingot or purifying furnace |
Country Status (1)
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| CN (1) | CN204385319U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108754601A (en) * | 2018-05-24 | 2018-11-06 | 江阴东升新能源股份有限公司 | A kind of silicon core side ingot manufacturing process of the disconnected ingot of anti-stick pan |
-
2014
- 2014-12-31 CN CN201420871908.5U patent/CN204385319U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108754601A (en) * | 2018-05-24 | 2018-11-06 | 江阴东升新能源股份有限公司 | A kind of silicon core side ingot manufacturing process of the disconnected ingot of anti-stick pan |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150610 Termination date: 20181231 |
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| CF01 | Termination of patent right due to non-payment of annual fee |