CN204119028U - A kind of twin-stage Boost circuit - Google Patents
A kind of twin-stage Boost circuit Download PDFInfo
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- CN204119028U CN204119028U CN201420463568.2U CN201420463568U CN204119028U CN 204119028 U CN204119028 U CN 204119028U CN 201420463568 U CN201420463568 U CN 201420463568U CN 204119028 U CN204119028 U CN 204119028U
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Abstract
The utility model provides a kind of twin-stage Boost circuit, comprise the first battery pack BAT1, first resistance R1, second resistance R2, 3rd resistance R3, 4th resistance R4, 5th resistance R5, 6th resistance R6, 7th resistance R7, first electric capacity C1, second electric capacity C2, 3rd electric capacity C3, 4th electric capacity C4, first inductance L 1, second inductance L 2, one IGBT switching tube Q1, 2nd IGBT switching tube Q2, first diode D1, second diode D2, 3rd diode D3, 4th diode D4, 5th diode D5, 6th diode D6, first control chip U1 and the second control chip U2.Adopt the technical solution of the utility model, by the Boost of twin-stage, first low-voltage is promoted to a comparatively suitable mid-scale voltage, again mid-scale voltage is promoted to the high voltage of needs, such grading, lifting, then the lifting amplitude of every grade is less, and the duty ratio of opening of switching tube can be made to be less than 0.88, and the output of prime booster tension and the boosting of rear class more stable.
Description
Technical Field
The utility model belongs to switching power supply invertion power supply field especially relates to a switching power supply boost circuit.
Background
In an inverter power supply, a Boost-inverter structure is often adopted, and a Boost circuit is widely adopted due to the advantages of simple structure, easy design, high efficiency and the like. However, in the case of a low input voltage, the single-stage Boost circuit generates a large amount of heat due to an excessive duty ratio, and the heat is not easily dissipated, and the switching tube is also easily unstable due to the excessive duty ratio. Because the boosting capacity is limited, the duty ratio of the switching tube easily exceeds 0.88, and 0.88 is a turning point of the normal operation of the switching tube, and the duty ratio of the control signal of the switching tube should be smaller than this value, so that the single-stage Boost is difficult to realize inversion, and is particularly difficult and heavy under the condition of high power.
Therefore, it is necessary to research the above defects in the prior art to provide a solution to solve the above defects in the prior art and avoid the problems.
SUMMERY OF THE UTILITY MODEL
In order to overcome the defects of the prior art, the utility model provides a doublestage Boost circuit, this circuit can be effectual make the switch tube work at lower duty cycle of opening, make the stable work of switch tube, can effectively reduce calorific capacity of switch tube simultaneously, make the circuit more stable.
For solving the problems existing in the prior art, the technical scheme of the utility model is that:
a two-stage Boost booster circuit comprises a first battery pack BAT1, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, a first capacitor C1, a second capacitor C2, a third capacitor C3, a fourth capacitor C4, a first inductor L1, a second inductor L2, a first IGBT switch tube Q1, a second IGBT switch tube Q2, a first diode D1, a second diode D2, a third diode D3, a fourth diode D4, a fifth diode D5, a sixth diode D6, a first control chip U1 and a second control chip U2; wherein,
the first diode D1 and the second diode D2 are Schottky diodes;
the fourth diode D4 and the sixth diode D6 are zener diodes;
the first capacitor C1 and the second capacitor C2 are electrolytic capacitors;
the input anode of the battery pack BAT1 is respectively connected with one end of the first resistor R1 and one end of the first inductor L1, and the cathode is connected with one end of the second resistor R2 and grounded; the other end of the second resistor R2 is connected with the other end of the first resistor R1, and is used as an output point of a voltage division signal to be connected with a pin 8 of the first control chip U1 and a pin 8 of the second control chip U2;
the other end of the first inductor L1 is connected to the collector of the first IGBT switching tube Q1 and the anode of the first diode D1, respectively; the cathode of the first diode D1 is connected with the positive terminal of the first capacitor C1, one end of the third resistor R3 and one end of the second inductor L2 respectively; the negative end of the first capacitor C1 is connected with the other end of the third resistor R3 and the emitter of the first IGBT switching tube Q1 and is grounded;
the other end of the second inductor L2 is connected to the collector of the second IGBT switching tube Q2 and the anode of the second diode D2, respectively; the cathode of the second diode D2 is connected to the positive terminal of the second capacitor C2, and together with the negative terminal of the second capacitor C2, serves as the output terminal of the whole two-stage Boost main circuit; the cathode of the second capacitor C2 is connected with the emitter of a second IGBT switching tube Q2 and is grounded;
pin 2 and pin 3 of the first control chip U1 are connected with a first control signal; the pin 5 of the first control chip U1 is respectively connected with the anode of the fourth diode D4 and one end of the third capacitor C3 and is grounded; the pin 6 is respectively connected with the pin 7, one end of the fifth resistor R5 and the anode of the third diode D3; the pin 8 is respectively connected with one end of a fourth resistor R4 and the other end of a third capacitor C3, and is grounded through a third capacitor C3; the other end of the fourth resistor R4 is respectively connected with the other end of the fifth resistor R5, the cathode of the third diode D3 and the cathode of the fourth diode D4, and is used as the output end of the control circuit to be connected with the gate of the first IGBT switching tube Q1; the anode of the fourth diode D4 is grounded;
pin 2 and pin 3 of the second control chip U2 are connected with a second control signal; a pin 5 of the second control chip U2 is respectively connected with an anode of a sixth diode D6 and one end of a fourth capacitor C4 and is grounded; the pin 6 is respectively connected with the pin 7, one end of the seventh resistor R7 and the anode of the fifth diode D5; the pin 8 is respectively connected with one end of a sixth resistor R6 and the other end of a fourth capacitor C4, and is grounded through the fourth capacitor C4; the other end of the sixth resistor R6 is respectively connected with the other end of the seventh resistor R7, the cathode of the fifth diode D5 and the cathode of the sixth diode D6, and is used as the output end of the control circuit to be connected with the gate of the second IGBT switching tube Q2; the anode of the sixth diode D6 is grounded.
Preferably, pin 2 of the first control chip U1 is connected to the positive pole of the first control signal, and pin 3 thereof is connected to the negative pole of the first control signal;
pin 2 of the second control chip U2 is connected to the positive electrode of the second control signal, and pin 3 thereof is connected to the negative electrode of the second control signal;
the first control signal and the second control signal are two independent control signals.
Preferably, the first control chip U1 or the second control chip U2 employs an optical coupler TLP 250.
Compared with the prior art, the beneficial effects of the utility model are as follows: the utility model discloses a Boost of doublestage promotes the low-voltage to a comparatively suitable intermediate voltage earlier, promotes the intermediate voltage to the high-voltage that needs again, promotes like this in grades, and then every hierarchical promotion range is less, can make opening the duty cycle of switch tube be less than 0.88 to the output of preceding stage promotion voltage and the back level step up more stably.
Drawings
Fig. 1 is a schematic diagram of a main circuit of the dual-stage Boost circuit of the present invention;
fig. 2 is an IGBT switching tube control circuit of the two-stage Boost circuit of the present invention;
fig. 3 is the overall circuit schematic diagram of the dual-stage Boost circuit of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
On the contrary, the invention is intended to cover alternatives, modifications, equivalents and alternatives which may be included within the spirit and scope of the invention as defined by the appended claims. Furthermore, in order to provide a better understanding of the present invention to the public, certain specific details are set forth in the following detailed description of the invention. It will be apparent to those skilled in the art that the present invention may be practiced without these specific details.
Referring to fig. 1, the present invention is a two-stage Boost main circuit of a two-stage Boost circuit. The circuit is formed by connecting two Boost in series, the input of the circuit is direct current, and the output voltage of the storage battery can change along with the discharging process, so that the input voltage is 24-48V. Through the first stage Boost, the voltage is boosted to 120V dc. Through the Boost of second grade again, the 120V direct current is promoted to 315V direct current, the utility model discloses a doublestage Boost circuit can provide suitable voltage for the inverter circuit in the back. The first resistor R1 and the second resistor R2 form a voltage divider, and can provide an operating voltage for a control chip in the IGBT switch tube control circuit.
Referring to fig. 2, the present invention is an IGBT switching tube control circuit for a two-stage Boost circuit. The control chip in the circuit adopts an optical coupler TLP250, a pin 1 and a pin 4 of the chip are suspended, and a pin 2 and a pin 3 are used as input ends for controlling signals of an IGBT switching tube. The pin 5 is grounded, and the pin 8 receives the voltage divided by a voltage divider in a double-stage Boost main circuit of the double-stage Boost circuit as the working voltage of the chip. The pin 6 and the pin 7 are connected together to be used as an output end of the chip, and are connected with a switching tube in the two-stage Boost main circuit through a fifth resistor R5 to drive the IGBT switching tube, so that the IGBT switching tube works in a switching state, and the purpose of working of the Boost circuit is achieved. A 0.1 muf ceramic capacitor is connected between pin 8 and pin 5 to stabilize the operation of the high gain linear amplifier and provide a bypass failure that can degrade the switching performance.
Referring to fig. 3, an overall circuit diagram of a two-stage Boost circuit according to the present invention is shown. The working process of the two groups of IGBT switching tube control circuits is the same. The ratio of a first resistor R1 to a second resistor R2 in the two-stage Boost main circuit is 3:5, and under the input condition of 24-48V, the voltage division range is 15-30V, so that the control chip can normally work. When the input end of the control chip is a switching-on signal, the pin 6 and the pin 7 output a voltage received by the pin 8, the gate voltage of the first IGBT switching tube is clamped at 15V through the fourth voltage regulator tube, and the IGBT switching tube is switched on. When the input end of the control chip is a turn-off signal, the output of the pin 6 and the pin 7 is 0V, the third diode is turned on, and the gate voltage of the IGBT switching tube is reduced by the conduction voltage drop of the third diode, so that the turn-off is realized.
The above description is only exemplary of the present invention and should not be taken as limiting the scope of the present invention, as any modifications, equivalents, improvements and the like made within the spirit and principles of the present invention are intended to be included within the scope of the present invention.
Claims (3)
1. A double-stage Boost circuit is characterized by comprising a first battery pack (BAT1), a first resistor (R1), a second resistor (R2), a third resistor (R3), a fourth resistor (R4), a fifth resistor (R5), a sixth resistor (R6), a seventh resistor (R7), a first capacitor (C1), a second capacitor (C2), a third capacitor (C3), a fourth capacitor (C4), a first inductor (L1), a second inductor (L2), a first IGBT switch tube (Q1), a second IGBT switch tube (Q2), a first diode (D1), a second diode (D2), a third diode (D3), a fourth diode (D4), a fifth diode (D5), a sixth diode (D6), a first control chip (U1) and a second control chip (U2); wherein,
the first diode (D1) and the second diode (D2) are Schottky diodes;
the fourth diode (D4) and the sixth diode (D6) are zener diodes;
the first capacitor (C1) and the second capacitor (C2) are electrolytic capacitors;
the input positive pole of the battery pack (BAT1) is respectively connected with one end of a first resistor (R1) and one end of a first inductor (L1), and the negative pole of the battery pack is connected with one end of a second resistor (R2) and is grounded; the other end of the second resistor (R2) is connected with the other end of the first resistor (R1), and is used as an output point of a voltage division signal to be connected with a pin 8 of a first control chip (U1) and a pin 8 of a second control chip (U2);
the other end of the first inductor (L1) is respectively connected with the collector of the first IGBT switching tube (Q1) and the anode of the first diode (D1); the cathode of the first diode (D1) is respectively connected with the positive terminal of the first capacitor (C1), one end of the third resistor (R3) and one end of the second inductor (L2); the negative end of the first capacitor (C1) is connected with the other end of the third resistor (R3) and the emitter of the first IGBT switching tube (Q1) and is grounded;
the other end of the second inductor (L2) is respectively connected with the collector of a second IGBT switching tube (Q2) and the anode of a second diode (D2); the cathode of the second diode (D2) is connected with the positive end of the second capacitor (C2), and the cathode of the second diode and the negative end of the second capacitor (C2) are used as the output end of the whole double-stage Boost main circuit; the cathode of the second capacitor (C2) is connected with the emitter of a second IGBT switching tube (Q2) and is grounded;
the pin 2 and the pin 3 of the first control chip (U1) are connected with a first control signal; the pin 5 of the first control chip (U1) is respectively connected with the anode of a fourth diode (D4) and one end of a third capacitor (C3) and is grounded; the pin 6 is respectively connected with the pin 7, one end of a fifth resistor (R5) and the anode of a third diode (D3); the pin 8 is respectively connected with one end of a fourth resistor (R4) and the other end of a third capacitor (C3), and is grounded through the third capacitor (C3); the other end of the fourth resistor (R4) is respectively connected with the other end of the fifth resistor (R5), the cathode of the third diode (D3) and the cathode of the fourth diode (D4), and is used as the output end of the control circuit to be connected with the gate electrode of the first IGBT switching tube (Q1); the anode of the fourth diode (D4) is grounded;
the pin 2 and the pin 3 of the second control chip (U2) are connected with a second control signal; the pin 5 of the second control chip (U2) is respectively connected with the anode of a sixth diode (D6) and one end of a fourth capacitor (C4) and is grounded; the pin 6 is respectively connected with the pin 7, one end of a seventh resistor (R7) and the anode of a fifth diode (D5); the pin 8 is respectively connected with one end of a sixth resistor (R6) and the other end of a fourth capacitor (C4), and is grounded through the fourth capacitor (C4); the other end of the sixth resistor (R6) is respectively connected with the other end of the seventh resistor (R7), the cathode of the fifth diode (D5) and the cathode of the sixth diode (D6), and is used as the output end of the control circuit to be connected with the gate of the second IGBT switching tube (Q2); the anode of the sixth diode (D6) is grounded.
2. The two-stage Boost circuit of claim 1, wherein the pin 2 of the first control chip (U1) is connected to the positive pole of the first control signal, and the pin 3 is connected to the negative pole of the first control signal;
pin 2 of the second control chip (U2) is connected with the anode of a second control signal, and pin 3 is connected with the cathode of the second control signal;
the first control signal and the second control signal are two independent control signals.
3. The dual-stage Boost circuit of claim 1, wherein the first control chip (U1) or the second control chip (U2) employs an optocoupler TLP 250.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420463568.2U CN204119028U (en) | 2014-08-16 | 2014-08-16 | A kind of twin-stage Boost circuit |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420463568.2U CN204119028U (en) | 2014-08-16 | 2014-08-16 | A kind of twin-stage Boost circuit |
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| CN204119028U true CN204119028U (en) | 2015-01-21 |
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| CN201420463568.2U Expired - Fee Related CN204119028U (en) | 2014-08-16 | 2014-08-16 | A kind of twin-stage Boost circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106374740A (en) * | 2016-10-19 | 2017-02-01 | 成都言行果科技有限公司 | Boosting circuit with high heat dissipation |
| CN112421594A (en) * | 2020-11-23 | 2021-02-26 | 深圳佑驾创新科技有限公司 | Input protection circuit and vehicle-mounted generator |
| CN113325184A (en) * | 2021-05-10 | 2021-08-31 | 棒糖科技(杭州)股份有限公司 | Multi-hormone detection equipment and method of movable sensing acquisition system |
-
2014
- 2014-08-16 CN CN201420463568.2U patent/CN204119028U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106374740A (en) * | 2016-10-19 | 2017-02-01 | 成都言行果科技有限公司 | Boosting circuit with high heat dissipation |
| CN112421594A (en) * | 2020-11-23 | 2021-02-26 | 深圳佑驾创新科技有限公司 | Input protection circuit and vehicle-mounted generator |
| CN112421594B (en) * | 2020-11-23 | 2023-02-28 | 深圳佑驾创新科技有限公司 | Input protection circuit and vehicle-mounted generator |
| CN113325184A (en) * | 2021-05-10 | 2021-08-31 | 棒糖科技(杭州)股份有限公司 | Multi-hormone detection equipment and method of movable sensing acquisition system |
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| C14 | Grant of patent or utility model | ||
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150121 Termination date: 20160816 |