CN1905077B - System and method for testing device unit of phase change storage - Google Patents
System and method for testing device unit of phase change storage Download PDFInfo
- Publication number
- CN1905077B CN1905077B CN 200610028229 CN200610028229A CN1905077B CN 1905077 B CN1905077 B CN 1905077B CN 200610028229 CN200610028229 CN 200610028229 CN 200610028229 A CN200610028229 A CN 200610028229A CN 1905077 B CN1905077 B CN 1905077B
- Authority
- CN
- China
- Prior art keywords
- sample
- test
- pulse
- pulse signal
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012360 testing method Methods 0.000 title claims abstract description 161
- 238000003860 storage Methods 0.000 title claims abstract description 47
- 230000008859 change Effects 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title description 14
- 239000000523 sample Substances 0.000 claims abstract description 136
- 238000006243 chemical reaction Methods 0.000 claims abstract description 17
- 239000012782 phase change material Substances 0.000 claims description 35
- 238000002474 experimental method Methods 0.000 claims description 6
- 238000010998 test method Methods 0.000 claims description 3
- 238000004886 process control Methods 0.000 claims description 2
- 238000012369 In process control Methods 0.000 claims 1
- 230000007423 decrease Effects 0.000 claims 1
- 238000010965 in-process control Methods 0.000 claims 1
- 238000009304 pastoral farming Methods 0.000 claims 1
- 230000006870 function Effects 0.000 description 21
- 230000009466 transformation Effects 0.000 description 19
- 210000001367 artery Anatomy 0.000 description 18
- 210000003462 vein Anatomy 0.000 description 18
- 238000010586 diagram Methods 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 230000007704 transition Effects 0.000 description 11
- 239000010408 film Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000011160 research Methods 0.000 description 6
- 241001269238 Data Species 0.000 description 4
- 230000004927 fusion Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 238000011056 performance test Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000004321 preservation Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 230000036962 time dependent Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Landscapes
- Semiconductor Memories (AREA)
Abstract
本发明涉及一种相变存储器器件单元的测试系统及测试方法，其特征在于所述的测试系统是由控制计算机、脉冲信号发生器、数字信号源、微控探针台和转换连接部件组成；其中，通过通用接口总线使主控计算机与脉冲信号发生器和数字信号源相连；通过控制卡的控制电缆使脉冲信号发生器和数字信号源与微控探针台相连；主控计算机通过控制于控制探针台在脉冲信号发生器和数字信号源之间切换；微控探针台的两个探针分别与相变存储器的上、下电极接触，构成一个存储单元，并通过操作模块进行电流-电压、电压-电流、电阻与写脉高、电阻与写脉宽、电阻与擦脉高、电阻与擦脉宽以及疲劳等七种测试。
The invention relates to a testing system and testing method of a phase-change memory device unit, which is characterized in that the testing system is composed of a control computer, a pulse signal generator, a digital signal source, a micro-control probe station and a conversion connection part; Among them, the main control computer is connected with the pulse signal generator and the digital signal source through the general interface bus; the pulse signal generator and the digital signal source are connected with the micro-control probe station through the control cable of the control card; Control the probe station to switch between the pulse signal generator and the digital signal source; the two probes of the micro-control probe station are respectively in contact with the upper and lower electrodes of the phase change memory to form a storage unit, and the current flow is carried out through the operation module -Voltage, voltage-current, resistance and writing pulse height, resistance and writing pulse width, resistance and wiping pulse height, resistance and wiping pulse width, and fatigue.
Description
Technical field
The present invention relates to the Performance Test System of phase transformation memory device unit, belong to the micro-nano art of electronics.
Background technology
The phase transition storage technology is based on Ovshinsky at late 1960s (Phys.Rev.Lett., 21,1450～1453,1968) beginning of the seventies (Appl.Phys.Lett., 18,254～257,1971) phase-change thin film that proposes can be applied to that the conception of phase change memory medium sets up, and is the memory device of a kind of low price, stable performance.Phase transition storage can be made on the silicon wafer substrate, and its critical material is recordable phase-change thin film, heating electrode material, thermal insulation material and extraction electrode material etc.The ultimate principle of phase transition storage is to utilize electric impulse signal to act on the device cell, make phase-change material between amorphous state and polycrystalline attitude, reversible transition occur, low-resistance when the high resistant during by the resolution amorphous state and polycrystalline attitude can realize writing, wipe and read operation of information.
The reading and writing of phase transition storage, wiping operation are exactly voltage or the current pulse signal that applies different in width and height at device cell: write operation (RESET), after phase-change material temperature in adding a weak point and strong pulse enable signal device cell is elevated to more than the fusingization temperature, through thereby cooling realization phase-change material polycrystalline attitude is to amorphous conversion fast, namely " 0 " attitude is to the conversion of one state again; Wipe operation (SET), a pulse enable signal phase-change material temperature long and medium tenacity is raised under the temperature of fusion when applying, on the Tc after, and keep a period of time to impel nucleus growth, thus realize amorphous state to the conversion of polycrystalline attitude, namely one state is to the conversion of " 0 " attitude; Read operation after adding a very weak pulse signal that can not exert an influence to the state of phase-change material, is read its state by the resistance value of measuring element unit.The pulse signal parameter of reading and writing, wiping operation needs to optimize.
In addition, mechanism's great majority of being engaged in the world at present the phase transition storage R﹠D work are major companies of semicon industry, the focus that they pay close attention to all concentrates in the commercialization that realizes how as early as possible phase transition storage, and therefore corresponding study hotspot also just launches around its device technology: reduce power consumption; Improve storage density and speed; Increase the serviceable life of device etc., wherein the Problem of Failure of device cell is the principal element in its life-span of restriction, essential further investigation, and corresponding device cell fatigue properties test macro development is key point.Simultaneously, the realization of phase transition storage memory property and sign directly perceived also are the committed steps in its study on the industrialization process.
Therefore, in order to promote the flow of research of phase transition storage, the sign of the electricity of its device cell and memory property (such as threshold voltage and electric current, read/write/wiping optimal operation parameter, fatigue properties etc.) is very important, but because phase transition storage still is in development at present, also there is not relevant standard testing system both at home and abroad, for this reason, the present invention intends proposing a cover device unit of phase change storage system.
Summary of the invention
The object of the present invention is to provide a kind of method to device unit of phase change storage system and corresponding test.
Described device unit of phase change storage system is comprised of main control computer, control software, pulse signal generator, derived digital signal, micro-control probe station and conversion link, by general purpose interface bus GPIB main control computer is linked to each other with derived digital signal with pulse signal generator, the control cables by control card makes pulse signal generator link to each other with the micro-control probe station with derived digital signal.Main control computer switches (Fig. 1) by control card control probe station between pulse signal generator and derived digital signal, carry out respectively transmission and the data acquisition of order with pulse signal generator and derived digital signal by the GPIB card.Thereby the feature of test macro is two probes by probe station to be contacted with the upper/lower electrode of phase-change memory device respectively and consists of a storage unit, by the electric current in the control operation software and voltage, voltage and electric current, resistance and write pulsewidth, resistance and write the high realizations such as these seven test modules and pulse signal device, derived digital signal, conversion link that concern of arteries and veins height, resistance and wiping pulsewidth, resistance and wiping arteries and veins reversible transition operation, the read-write of storage unit are wiped the electric properties such as test, fatigue properties, the optimization of phase transformation action pane and characterized.The concrete function of each assembly of device unit of phase change storage system is as follows:
1) main control computer, mainly be by with transmission and the data acquisition of control implement software order, be connected with the micro-control probe station successively by the conversion link with derived digital signal with the control wave generator and realize writing/wiping and performance test phase transformation memory device unit.
2) model of pulse signal generator is 81104A, produced by U.S. Agilent company, pulse signal generator can be with single channel and two kinds of mode producing pulse signals of binary channels, and pulse signal is characterised in that: can be Sing plus or continuous impulse signal; The shape facility of pulse signal is single shape or two kinds of difform combinations; The function of pulse signal is that device cell is carried out read/write/wiping operation; The altitude range of current pulse signal is 0-400mA, and the altitude range of voltage pulse signal is 0-10V, the width 6.25ns-999.5s of pulse signal.
3) model of derived digital signal is 2400, produced by U.S. Keithley company, its function provides the curtage signal source and tests corresponding voltage, electric current or resistance, and wherein the scope of current signal is 50pA-1.05A, and the scope of voltage signal is 5 μ V-210V.Corresponding measuring current scope is 10pA-1.055A, and the scope of test voltage is 1 μ V-211V, and the scope of test resistance is 100 μ Ω-211M Ω.
4) model of micro-control probe station is RHM-06, produced by U.S. Cascade company, the micro-control probe station mainly partly is comprised of sample stage, probe, optical microscope, micro-control knob, vacuum pump etc., and its major function provides platform and introducing pulse signal and the measuring-signal of placing sample and is applied on the sample.
The different content measurement of described memory cell test macro is by corresponding function software module controls, the function software module mainly comprises current-voltage test module, voltage-to-current test module, resistance and writes the high test module of arteries and veins, resistance and write pulsewidth test module, resistance and the high test module of wiping arteries and veins, resistance and wiping pulsewidth test module, these seven test modules of testing fatigue module that the process flow diagram of function software as shown in Figure 2.In the process control module, at first input the parameter of sample, whether the parameter of then judging sample is reasonable, if unreasonable need re-enter, if rationally then select corresponding testing experiment, then the parameter of the required pulse producer of input test test and the parameter of derived digital signal, judge again whether input parameter is reasonable, if unreasonable need re-enter, otherwise start corresponding test module, after corresponding test module finishes, enter the Data Control module, the data that record are drawn and edited, then preserve the test data of gained, whole experiment finishes.The major function of each module is as follows:
(a) described current-voltage test module, the voltage pulse signal that sends amplitude and increase gradually by function software control figure signal source is exactly measured storage unit corresponding electric current this moment, because thereby the voltage that increases gradually is converted into the nucleus growth that corresponding heat energy promotes phase-change material in the storage unit by storage unit, realized the conversion of phase-change material from the amorphous to the polycrystalline, because the significant difference of amorphous and polycrystalline resistor has just shown two sections curves with obvious Different Slope on current-voltage curve, thereby can study threshold voltage and the electric current of phase-change memory device by this test curve, resistance characteristic before and after the phase transformation.The process flow diagram of the experiment control module of its software as shown in Figure 3.After entering the experiment control module, at first pulse signals generator and derived digital signal carry out initialization, then operate control card sample is switched to pulse signal generator, then operation is once write or wiped to the operating impulse signal generator to sample, guarantees initial amorphous or the polycrystalline state of sample.Then enter test loop, at first operate control card sample is cut to derived digital signal, then the operand word signal source records required data, judges at last whether circulation finishes, do not finish to continue test, otherwise all data that record are prepared by the Data Control resume module.
(b) described voltage-to-current test module, the current pulse signal that sends amplitude and increase gradually by function software control figure signal source is exactly measured storage unit corresponding voltage this moment, because thereby the electric current that increases gradually is converted into the nucleus growth that corresponding heat energy promotes phase-change material in the storage unit by storage unit, realized the conversion of phase-change material from the amorphous to the polycrystalline, because the significant difference of amorphous and polycrystalline resistor has just shown two sections curves with obvious Different Slope on current-voltage curve, thereby can study threshold voltage and the electric current of phase-change memory device by this test curve, resistance characteristic before and after the phase transformation.The process flow diagram of the experiment control module of its software as shown in Figure 3.At first pulse signals generator and derived digital signal carry out initialization, then operate control card sample is switched to pulse signal generator, then operation is once write or wiped to the operating impulse signal generator to sample, guarantees initial amorphous or the polycrystalline state of sample.Then enter test loop, at first operate control card sample is cut to derived digital signal, then the operand word signal source records required data, judges at last whether circulation finishes, do not finish to continue test, otherwise all data that record are prepared by the Data Control resume module.
(c) described resistance and the test module of writing the high relation of arteries and veins, it is constant to send pulse width by function software control wave generator exactly, pulse height is along with each circulation increases gradually, and pulse signal is applied on the sample, then utilize derived digital signal to measure the resistance of sample by control software, and record, show and preserve the resistance of sample-the write high curve of arteries and veins.Because the pulse signal that increases highly gradually is converted into heat energy by storage unit, impel the temperature of phase-change material to be increased to more than the melting temperature, stoped the nucleus growth of phase-change material in the storage unit through cooling off fast, realize the rapid variation of phase-change material resistance from the low-resistance to the high resistant certain the time when the arteries and veins height is increased to, then the pulse height of this moment is write the high optimized parameter of arteries and veins just.Power consumption when realizing the less then device work of the height of pulse when resistance sharply changes is lower, thereby is conducive to the research of power consumption of device of the different materials of different structure.The process flow diagram of its software experimentation control module as shown in Figure 4.At first pulse signals generator and derived digital signal carry out initialization, then operate control card sample is switched to pulse signal generator, and the operating impulse signal generator is once wiped operation to sample again, guarantee the initial polycrystalline attitude of sample.Then enter test loop, the operating impulse signal generator carries out write operation one time, again operate control card sample is switched to derived digital signal, the resistance value that the test of operand word signal source was write, then sample is switched to pulse signal generator, judge at last whether test loop finishes, if do not finish then continue to test, otherwise all test datas are prepared by the Data Control resume module.Wherein pulse height is along with each circulation increases gradually.
(d) described resistance and the test module of writing the pulsewidth relation, it is constant to send pulse height by function software control wave generator exactly, the pulse signal that pulse width increases gradually utilizes the correspondence control software command pulse signal source of main control computer to send the pulse signal that pulse width increases gradually along with each circulation, and pulse signal is applied on the sample, then utilize derived digital signal to measure the resistance of sample by control software, and record, show and preserve the resistance of sample-write pulsewidth curve.The pulse signal that width increases gradually is converted into the heat energy that increases gradually by storage unit, then the temperature of phase-change material is also increasing gradually, thereby realize the conversion of phase-change material from the polycrystalline to the amorphous when the temperature of phase-change material is increased to temperature of fusion when above, the pulse width when realizing that phase-change material resistance changes from the low-resistance to the high resistant is write the optimized parameter of pulsewidth just.Speed when realizing resistance variations during the less then device work of the width of pulse is faster, thereby is conducive to the research of speed of device of the different materials of different structure.The process flow diagram of its software experimentation control module as shown in Figure 4.At first pulse signals generator and derived digital signal carry out initialization, then operate control card sample is switched to pulse signal generator, and the operating impulse signal generator is once wiped operation to sample again, guarantee the initial polycrystalline attitude of sample.Then enter test loop, the operating impulse signal generator carries out write operation one time, again operate control card sample is switched to derived digital signal, the resistance value that the test of operand word signal source was write, then sample is switched to pulse signal generator, judge at last whether test loop finishes, if do not finish then continue to test, otherwise all test datas are prepared by the Data Control resume module.Wherein pulse width is along with each circulation increases gradually.
(e) described resistance and the test module of wiping the pulsewidth relation, send the pulse signal that pulse height is constant, pulse width increases gradually by function software control wave generator exactly, utilize the corresponding software command pulse signal source of main control computer to send the pulse signal that the arteries and veins height increases gradually along with each circulation, and pulse signal is applied on the sample, utilize derived digital signal to measure the resistance of sample by control software, and the resistance of record, demonstration and preservation sample-high curve of wiping arteries and veins.The pulse signal that width increases gradually is converted into the heat energy that increases gradually by storage unit, then the temperature of phase-change material is also increasing gradually, thereby realize the conversion of phase-change material from the amorphous to the polycrystalline when the temperature of phase-change material is increased to the following Tc of temperature of fusion when above, the pulse width when realizing that phase-change material resistance changes from the high resistant to the low-resistance is wiped the optimized parameter of pulse just.Speed when realizing resistance variations during the less then device work of the width of pulse is faster, thereby is conducive to the speed research of device of the different materials of different structure.The process flow diagram of its software experimentation control module as shown in Figure 4.At first pulse signals generator and derived digital signal carry out initialization, then operate control card sample is switched to pulse signal generator, and the operating impulse signal generator carries out write operation one time to sample again, guarantee the initial amorphous state of sample.Then enter test loop, the operating impulse signal generator is once wiped operation, again operate control card sample is switched to derived digital signal, the resistance value that the test of operand word signal source is nuzzled up, then sample is switched to pulse signal generator, judge at last whether test loop finishes, if do not finish then continue to test, otherwise all test datas are prepared by the Data Control resume module.Wherein pulse width is along with each circulation increases gradually.
(f) described resistance and the test module of wiping the high relation of arteries and veins send the pulse signal that pulse width is constant, pulse height increases gradually by function software control wave generator exactly.Wiping in the high fixing situation of arteries and veins, utilize the correspondence control software command pulse signal source of main control computer to send the pulse signal that pulsewidth increases gradually or reduces, and pulse signal is applied on the sample, then utilize derived digital signal to measure the resistance of sample by control software, and the resistance of record, demonstration and preservation sample-wiping pulsewidth curve.The pulse signal that increases highly gradually is converted into the heat energy that increases gradually by storage unit, then the temperature of phase-change material is also increasing gradually, thereby realize the conversion of phase-change material from the amorphous to the polycrystalline when the temperature of phase-change material is increased to the following Tc of temperature of fusion when above, the pulse height when realizing that phase-change material resistance changes from the high resistant to the low-resistance is wiped the optimized parameter of pulse just.Power consumption when realizing resistance variations during the less then device work of the height of pulse is lower, thereby is conducive to the research of power consumption of device of the different materials of different structure.The process flow diagram of its software as shown in Figure 4.At first pulse signals generator and derived digital signal carry out initialization, then operate control card sample is switched to pulse signal generator, and the operating impulse signal generator carries out write operation one time to sample again, guarantee the initial amorphous state of sample.Then enter test loop, the operating impulse signal generator is once wiped operation, again operate control card sample is switched to derived digital signal, the resistance value that the test of operand word signal source is nuzzled up, then sample is switched to pulse signal generator, judge at last whether test loop finishes, if do not finish then continue to test, otherwise all test datas are prepared by the Data Control resume module.Wherein pulse height is along with each circulation increases gradually.
(g) described fatigue properties test module, write the wiping pulse signal by what function software control wave generator sent the some that sets in advance exactly, and then the so many size of writing resistive memory cell behind the pulse signal of wiping number of times is sent in the measurement of control figure signal source, iterative cycles measure when total when writing the wiping number of times and reaching certain value the resistance of storage unit the variation of magnitude has occured, then this moment total to write and wipe number of times be the cycle life of storage unit maximum, thereby be conducive to the polycrystalline attitude of device of different materials of different structure and the research of amorphous fatigue properties.Specifically, utilize the correspondence control software command pulse signal source of main control computer to send the high fixing pulse signal of writing/wipe of pulsewidth and arteries and veins, and pulse signal is applied on the sample, then utilize derived digital signal to measure the resistance of sample by control software, and record, show and preserve the resistance of sample-write/wipe frequency curve, the quantity of writing/wipe pulse signal can be single or multiple continuous signals, the cycle of writing/wipe pulse signal can preset, and the number of times that pulse signal was write/wiped in output can preset; When writing/wiping pulse signal and being individual signals, the number of times that pulse signal was write/wiped in output is total writing/wipe number of times; When writing/wiping pulse signal and being a plurality of continuous signal, the continuous signal quantity of at every turn sending can preset, and the product of continuous signal quantity and output signal number of times is total writing/wipe number of times.Wherein the process flow diagram of the fatigue properties software of polycrystalline attitude as shown in Figure 5.At first pulse signals generator and derived digital signal carry out initialization, then operate control card sample is switched to pulse signal generator, and then the operating impulse signal generator operates the wiping that sample carries out once, guarantees the initial polycrystalline attitude of sample.Then enter in the test loop, in test loop, at first enter to write and wipe circulation, the operating impulse signal generator carries out write operation one time to sample, and then the operating impulse signal generator is wiped operation to sample, judge then whether write the wiping number of times reaches setting value, do not operate if proceed to write to wipe, otherwise sample is switched to derived digital signal, operand word signal source test is through so repeatedly the resistance value after nuzzling up write, then operate control card sample is switched to pulse signal generator, judge at last whether test loop finishes, if do not finish to continue test, otherwise, all data that record are prepared by the Data Control resume module.
The software operation process of above-mentioned device unit of phase change storage system, be exactly at first to choose the module that to test, then entering apparatus parameter, pulse parameter and test parameter, by button omnidistance control is carried out in the beginning in the operating process, time-out, end again, at last the data of test and curve are all preserved.
In sum, device unit of phase change storage of the present invention system, and the performance test that utilizes the phase transformation memory device unit that described test macro carries out, judge by measuring current-voltage curve whether phase transformation memory device unit phase transformation has occured; The state of the resistance decision device unit by measuring phase transformation memory device unit is polycrystalline attitude (" 0 " attitude) or amorphous state (one state); Determine the best wiping pulse parameter of writing by the relation of test resistance and pulse signal width and height; Judge polycrystalline attitude and amorphous cycle life by testing the device cell resistance of necessarily writing the wiping number of times, i.e. fatigue properties (seeing embodiment 1-5 for details).
The hardware configuration synoptic diagram of Fig. 1 device unit of phase change storage system.
The function software process flow diagram of Fig. 2 device unit of phase change storage system.
The software flow pattern of the electric current of Fig. 3 device unit of phase change storage system and voltage relationship or voltage and current relationship test module.
The resistance of Fig. 4 device unit of phase change storage system and the software flow pattern of writing/wipe pulsewidth or high four test modules of arteries and veins.
The software flow pattern of the fatigue properties test module of Fig. 5 device unit of phase change storage system.
The pictorial diagram of a kind of device unit of phase change storage of Fig. 6 system.
The structural representation of Fig. 7 phase transformation memory device unit.
The current-voltage curve of Fig. 8 phase transformation memory device unit.
The voltage-to-current curve of Fig. 9 phase transformation memory device unit.
The resistance of Figure 10 phase transformation memory device unit-high relation curve of write current arteries and veins.
The resistance of Figure 11 phase transformation memory device unit-write current pulsewidth relation curve.
The resistance of Figure 12 phase transformation memory device unit-write and wipe the number of times relation curve.
Embodiment
Fig. 6 is the pictorial diagram of a kind of device unit of phase change storage system, it is made of hardware such as control computing machine, control software, pulse signal generator, derived digital signal, micro-control probe station and conversion links, and its function software mainly comprises current-voltage test module, voltage-to-current test module, resistance and writes the high test module of arteries and veins, resistance and write seven test modules such as pulsewidth test module, resistance and the high test module of wiping arteries and veins, resistance and wiping pulsewidth test module, testing fatigue module.Wherein, the model of pulse signal generator is 81104A, manufacturer is U.S. Agilent company, and pulse signal generator can be with single channel and two kinds of mode producing pulse signals of binary channels, and pulse signal is characterised in that: can be Sing plus or continuous impulse signal; The shape facility of pulse signal is single shape or two kinds of difform combinations; The function of pulse signal is that device cell is carried out read/write/wiping operation; The altitude range of current pulse signal is 0-400mA, and the altitude range of voltage pulse signal is 0-10V, the width 6.25ns-999.5s of pulse signal; The model of derived digital signal is 2400, production firm is U.S. Keithley company, its function provides the curtage signal source and tests corresponding voltage, electric current or resistance, wherein the scope of current signal is 50pA-1.05A, the scope of voltage signal is 5 μ V-210V, corresponding measuring current scope is 10pA-1.055A, and the scope of test voltage is 1 μ V-211V, and the scope of test resistance is 100 μ Ω-211M Ω; The model of micro-control probe station is RHM-06, production firm is U.S. Cascade company, the micro-control probe station mainly partly is comprised of sample stage, probe, optical microscope, micro-control knob, vacuum pump etc., and its major function provides platform and introducing pulse signal and the measuring-signal of placing sample and is applied on the sample.
Adopt the current-voltage test module of above-mentioned test macro can test the current-voltage curve of phase transformation memory device unit, the structural representation of phase transformation memory device unit as shown in Figure 7, the thickness of each layer film is: bottom electrode W film 60nm; Sb
2Te
3Film 40nm; SiO
2Film 60nm; Top electrode W film 100nm, the diameter of nanometer top electrode are 60nm.Concrete method of testing is as follows: measure storage unit corresponding electric current this moment by the voltage pulse signal that function software control figure signal source is sent amplitude and increased gradually, the voltage tester scope is 0.001-0.996V, the stepping that voltage increases is 0.005V, records corresponding voltage and current numerical value and can obtain current-voltage curve (as shown in Figure 8).Because thereby the voltage that increases gradually is converted into the nucleus growth that corresponding heat energy promotes phase-change material in the storage unit by storage unit, realized the conversion of phase-change material from the amorphous to the polycrystalline, because the significant difference of amorphous and polycrystalline resistor, two sections curves with obvious Different Slope on current-voltage curve, have just been shown, thereby can study the threshold voltage/current of phase-change memory device by this test curve, resistance characteristic before and after the phase transformation, known that by Fig. 8 the critical phase time-dependent current of phase-change material generation crystallization is 0.104mA in the device cell, the critical phase time variant voltage is 0.54V.
Current-voltage test module used among the embodiment 1 is changed into the voltage-to-current test module, concrete test parameter is as follows: the testing current scope is 0-1.75mA, the stepping that electric current increases is 0.05mA, all the other are identical with embodiment 1, record corresponding electric current and voltage value and can obtain voltage-to-current curve (as shown in Figure 9).Known that by Fig. 9 the critical phase time-dependent current of phase-change material generation crystallization is that 0.1mA, critical phase time variant voltage are 0.46V in the device cell.
Current-voltage test module used among the embodiment 1 is changed into resistance and writes the high test module of arteries and veins, concrete test parameter is as follows: the testing current scope is 0.001-4.001mA, the stepping that electric current increases is 0.1mA, the width of pulse current is 30ns, all the other are identical with embodiment 1, record corresponding electric current and resistance value and can obtain resistance-current curve (as shown in figure 10).Known that by Figure 10 when pulse current was lower than 3.0mA, resistance was about 1000 Ω, phase-change thin film still is the polycrystalline attitude, because electric current is too low, the Joule heat that provides is not enough to molten film, therefore can not get the amorphous state attitude.But, rising with pulse current, the Joule heat that offers device cell is just more, the ratio of phase-change material fusing is just larger, the ratio of the amorphous state attitude that therefore obtains is also just larger, and resistance raises, and is known by figure, the minimum current that obtains the amorphous state attitude is about 3.5mA, and this moment, amorphous resistance was about 2 * 10
5Ohm is than high two orders of magnitude of crystalline resistance.
Current-voltage test module used among the embodiment 1 is changed into resistance and writes the pulsewidth test module, concrete test parameter is as follows: pulse current tilted object scope is 2-100ns, it is to change 5ns into behind 1ns, the 5ns that the stepping that pulsewidth increases begins, the height of pulse current is 3.5mA, all the other are identical with embodiment 1, record corresponding pulsewidth and resistance value and can obtain resistance-pulsewidth curve (as shown in figure 11).Known that by Figure 11 when pulse width during less than 5ns, resistance is very low, phase-change thin film still is in the polycrystalline attitude, because phase-change material may have little time fusing within the so short time, therefore can't obtain amorphous state.With the increase of pulse width, resistance increases sharply, and illustrates that phase-change material melts, and changes the amorphous state of high-impedance state into.When pulse width during greater than 29ns, increase again pulse width for increasing large having acted on too not of amorphous state resistance, illustrate for Sb
2Te
3Phase-change material, the time of 30ns is enough to realize that the polycrystalline attitude is to amorphous transformation.
Embodiment 5
Current-voltage test module used among the embodiment 1 is changed into resistance and testing fatigue module, concrete test parameter is as follows: pulse current and the pulse width of crystallization operation are respectively 0.8mA and 80ns, the pulse current of decrystallized operation and pulse width are respectively 4.0mA and 23ns, all the other are identical with embodiment 1, and record is write accordingly and wiped number of times and resistance value and can obtain resistance-write and wipe frequency curve (as shown in figure 12).Known by Figure 12, realized at least the erasable number of times of nearly 1000 times circulation, and amorphous state/crystalline resistance ratio illustrates to have good memory property still greater than 10.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610028229 CN1905077B (en) | 2006-06-27 | 2006-06-27 | System and method for testing device unit of phase change storage |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200610028229 CN1905077B (en) | 2006-06-27 | 2006-06-27 | System and method for testing device unit of phase change storage |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1905077A CN1905077A (en) | 2007-01-31 |
| CN1905077B true CN1905077B (en) | 2013-10-30 |
Family
ID=37674308
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610028229 Active CN1905077B (en) | 2006-06-27 | 2006-06-27 | System and method for testing device unit of phase change storage |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1905077B (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7639527B2 (en) * | 2008-01-07 | 2009-12-29 | Macronix International Co., Ltd. | Phase change memory dynamic resistance test and manufacturing methods |
| KR101047052B1 (en) * | 2009-05-28 | 2011-07-06 | 주식회사 하이닉스반도체 | Phase change memory device and test circuit for same |
| CN101777388B (en) * | 2010-01-08 | 2012-08-08 | 中国科学院上海微系统与信息技术研究所 | Method for obtaining phase-change memory phase-change resistance crystallization rate |
| US8233345B2 (en) | 2010-09-08 | 2012-07-31 | International Business Machines Corporation | Phase change memory cycle timer and method |
| CN102354537B (en) * | 2011-07-06 | 2014-03-05 | 华中科技大学 | A kind of testing method of phase-change memory chip |
| CN102290106B (en) * | 2011-07-06 | 2014-05-07 | 华中科技大学 | Device for testing phase change memory unit array |
| CN104134468B (en) * | 2014-08-01 | 2017-10-17 | 中国科学院微电子研究所 | Method for testing durability parameters of RRAM (resistive random access memory) |
| CN107591186B (en) * | 2017-08-28 | 2020-08-11 | 中国科学院上海微系统与信息技术研究所 | Voltage and current test automatic switching circuit, phase change unit test system and method |
| CN111525028B (en) * | 2020-04-26 | 2023-06-06 | 天津理工大学 | Low temperature variable resistor regulated by electric pulse |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1588664A (en) * | 2004-08-06 | 2005-03-02 | 中国科学院上海微系统与信息技术研究所 | Characterization emthod for convertable phase change material electric property |
-
2006
- 2006-06-27 CN CN 200610028229 patent/CN1905077B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1588664A (en) * | 2004-08-06 | 2005-03-02 | 中国科学院上海微系统与信息技术研究所 | Characterization emthod for convertable phase change material electric property |
Non-Patent Citations (1)
| Title |
|---|
| 同上. |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1905077A (en) | 2007-01-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1905077B (en) | System and method for testing device unit of phase change storage | |
| Hamann et al. | Ultra-high-density phase-change storage and memory | |
| Wright et al. | Terabit-per-square-inch data storage using phase-change media and scanning electrical nanoprobes | |
| Lankhorst et al. | Low-cost and nanoscale non-volatile memory concept for future silicon chips | |
| US20140042381A1 (en) | State changing device | |
| CN102290106A (en) | Device for testing phase change memory unit array | |
| Huang et al. | Nonthermal phase transition in phase change memory cells induced by picosecond electric pulse | |
| CN103514322B (en) | Phase change memory unit SPICE model system considering heat accumulation effects and application of phase change memory unit SPICE model | |
| CN101763452B (en) | Simulation method of phase-change memory | |
| Ciocchini et al. | Modeling of threshold-voltage drift in phase-change memory (PCM) devices | |
| CN101699562B (en) | Erasing method of phase change memory | |
| CN1326137C (en) | Phase change material capable of being used for phase transformation memory multi-stage storage | |
| CN100397676C (en) | Characterization method of electrical properties of reversible phase change materials | |
| CN104575611A (en) | System for picosecond pulse test of device units of phase change memory | |
| Wu et al. | Sb-rich Si–Sb–Te phase-change material for phase-change random access memory applications | |
| CN105810242A (en) | Phase change memory and operation method for improving fatigue life of same | |
| Liao et al. | Temperature-based phase change memory model for pulsing scheme assessment | |
| CN104051021B (en) | Thermal crosstalk testing method of phase change memory | |
| CN101777389A (en) | System and method for obtaining phase-change memory unit phase-change zone radius | |
| Gille et al. | Amorphous–crystalline phase transitions in chalcogenide materials for memory applications | |
| CN103943144A (en) | Reference resistance-optimized phase change memory reading circuit and reference resistance optical selection method | |
| CN108597558B (en) | System and method for optimizing phase change memory write operation current | |
| CN101777388B (en) | Method for obtaining phase-change memory phase-change resistance crystallization rate | |
| Yu et al. | Growth dominated crystallization of GeTe mushroom cells during partial SET operation | |
| CN116631475A (en) | Simulation system and method for 1S1R module of three-dimensional phase change memory |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |