CN1986086A

CN1986086A - Device and method for cleaning semiconductor silicon chip

Info

Publication number: CN1986086A
Application number: CN 200610147841
Authority: CN
Inventors: 张晨骋
Original assignee: Shanghai Integrated Circuit Research and Development Center Co Ltd
Current assignee: Shanghai IC R&D Center Co Ltd
Priority date: 2006-12-22
Filing date: 2006-12-22
Publication date: 2007-06-27

Abstract

The invention provides a cleaning device for semiconductor silicon wafers, which includes a cleaning water tank and a bracket for carrying silicon wafers, wherein the device also includes a mechanical cantilever on which at least one ultrasonic oscillation generator is arranged, wherein the mechanical The cantilever can be stretched into the cleaning tank to move, and the ultrasonic wave oscillator provided on the mechanical arm provides ultrasonic energy during the movement. The invention also provides a cleaning method for semiconductor silicon chips. Compared with the existing technology, the ultrasonic oscillator installed on the mechanical cantilever can generate uniform ultrasonic energy with the movement of the mechanical cantilever, effectively improving the uniformity of the ultrasonic energy on the surface of the silicon wafer, thereby better removing the silicon wafer The tiny particles on the surface also reduce the damage to the silicon wafer caused by the uneven energy of the ultrasonic waves. The invention not only can effectively improve the production efficiency, but also does not bring too much extra cost, and is suitable for cleaning equipment widely used in the industry.

Description

The cleaning device of semi-conductor silicon chip and cleaning method

Technical field

The invention belongs to the semi-conductor silicon chip processing procedure, be specifically related to the cleaning of semi-conductor silicon chip.

Background technology

Along with the continuous progress of integrated circuit fabrication process, it is more and more littler that the volume of semiconductor devices is just becoming, if this has caused also that very small particle does not clean up on the silicon chip, also can influence the manufacturing and the performance of final semiconductor devices.Exist a static relatively boundary layer between silicon chip surface and the cleaning liquid.When attached to the particle diameter of silicon chip surface during less than boundary layer thickness, flowing of cleaning liquid just can't be to particle generation effect.So traditional fluid cleaning method can not be removed these small particles very effectively.To improve traditional fluid cleaning method in order solving, to have introduced ultrasonic wave in the semiconductor cleaning at present.Ultrasonic energy can produce small bubble in water, the vibrations that produced when bubble pops will help to peel off those attached to the molecule on the silicon chip, thereby cleans silicon chip.Yet with wavy transmission, therefore, the ultrasonic energy of silicon chip surface just inevitably produces problem of non-uniform to hyperacoustic energy in media.

For the one chip cleaning method,, can effectively eliminate the energy uniformity problem of each point of silicon chip surface because silicon chip is being done rotation at a high speed all the time in cleaning process.

For traditional water tank type cleaning method, the inhomogeneities of ultrasonic energy can cause very big problem.Experimental data shows, has banded particle band on the silicon chip surface after the cleaning.Ways of addressing this issue is that diverse location is installed a plurality of supersonic oscillations generators in tank at present, to improve the energy density uniformity.But a plurality of supersonic oscillations generators are installed can increase production cost, and in addition, the supersonic oscillations generator of increase can cause the increase of general power, and these might some small structures of breaking, thereby produce extra defective.

Summary of the invention

The object of the present invention is to provide a kind of cleaning device and cleaning method of semi-conductor silicon chip, uniform excusing from death wave energy can be provided.

For achieving the above object, the invention provides a kind of cleaning device of semi-conductor silicon chip, the carriage that comprises cleaning sink and carrying silicon chip, wherein, this device also comprises a mechanical cantilever, and this mechanical cantilever is provided with at least one supersonic oscillations generator, wherein, this mechanical cantilever can stretch into motion in the cleaning sink, and the excusing from death ripple clapp oscillator that is located on the mechanical arm provides the excusing from death wave energy in motion process.

The present invention also provides a kind of cleaning method of semi-conductor silicon chip, at first semi-conductor silicon chip is placed on the silicon chip carriage, and the silicon chip carriage that will carry silicon chip places in the tank that fills cleaning liquid, wherein, the cleaning device of the semi-conductor silicon chip that this cleaning method adopts comprises that a mechanical cantilever and at least one are located at the excusing from death ripple clapp oscillator on the mechanical cantilever, and this method comprises the steps: that also a. starts mechanical cantilever and is installed in supersonic oscillations generator on the mechanical cantilever; B. mechanical cantilever stretches in the tank and according to predefined path and moves.

Compared with prior art, the present invention is installed in ultrasonic oscillator on the mechanical cantilever, can produce the wave energy of excusing from death uniformly along with the motion of mechanical cantilever, eliminated the peak and the low ebb zone of ultrasonic energy on the silicon chip surface, effectively improve the uniformity of silicon chip surface excusing from death wave energy, thereby remove the molecule of silicon chip surface better, also reduce the damage that causes silicon chip by excusing from death wave energy inequality simultaneously.The present invention not only can effectively enhance productivity, and also can not bring too much extra cost simultaneously, and be applicable to the widely used cleaning equipment of industry.

Description of drawings

To the description of one embodiment of the invention, can further understand purpose, specific structural features and the advantage of its invention by following in conjunction with its accompanying drawing.Wherein, accompanying drawing is:

Fig. 1 looks schematic diagram for the master of semiconductor cleaning apparatus of the present invention;

Fig. 2 is the schematic side view of semiconductor cleaning apparatus of the present invention.

The specific embodiment

See also Fig. 1 and Fig. 2, the cleaning device of semi-conductor silicon chip of the present invention comprises that carrying 3, one mechanical cantilevers 4 of 2, one cleaning sinks of silicon chip carriage of silicon chip 1 and at least one are arranged on the supersonic oscillations generator 5 on the mechanical cantilever 4.Fill cleaning fluid in the cleaning sink 3.Mechanical cantilever 4 is connected with a motor (not shown).The range of movement of Motor Control mechanical cantilever 4 and the direction of motion, mechanical cantilever 4 can about, about or seesaw.The number of supersonic oscillations generator 5 can or specifically clean needs according to tank 3 sizes and increase and decrease.

In the preferred embodiment of the present invention, supersonic oscillations generator 5 can be point-like supersonic oscillations generators, also can be columnar ultrasound ripple clapp oscillator.If adopt columnar ultrasound ripple clapp oscillator, generally on cantilever 4, install one and get final product; If adopt point-like supersonic oscillations generator, generally can on cantilever 4, evenly install 1 to 4 to reach better cleaning performance.

The cleaning method of semi-conductor silicon chip provided by the invention comprises the steps: at first semi-conductor silicon chip 1 to be placed on the silicon chip carriage 2, and the silicon chip carriage 2 that will carry silicon chip 1 places in the tank 3 that fills cleaning liquid, start supersonic oscillations generator 5 and the motor that is located on the mechanical cantilever 4 then, Motor Control mechanical cantilever 4 stretches in the cleaning fluid of silicon chip 1 top, and makes mechanical cantilever 4 begin uniform motion according to predefined path in tank 3.

Ultrasonic oscillator 5 provides the excusing from death wave energy of high homogeneity in motion process, thereby effectively eliminates peak and low ebb zone that ultrasonic energy is gone up on silicon chip 1 surface, and the ultrasonic energy on silicon chip 1 surface is evenly distributed.The range of movement that the mechanical cantilever 4 of supersonic oscillations generator 5 is housed only limits to the top of silicon chips in the tank 3 and the left and right sides and can not touch the sidewall of tank 3.Mechanical cantilever 4 can move up and down according to actual set, side-to-side movement and seesawing.

After cleaning is finished, close supersonic oscillations generator 5, Motor Control mechanical cantilever 4 returns initial position, and silicon chip 1 is taken out from tank 3.

In preferred embodiment of the present invention, supersonic oscillations generator 5 employed frequencies are 250 KHz to 2 megahertzes, and its power on the unit are of silicon chip 1 surface generation is 0.5-5 watt/square centimeter.

Claims

1. A cleaning device for semiconductor silicon wafers, comprising a cleaning tank and a bracket for carrying silicon wafers, characterized in that:

The device also includes a mechanical cantilever, on which at least one ultrasonic oscillation generator is arranged, wherein, the mechanical cantilever can extend into the cleaning tank and move, and the ultrasonic oscillation generator on the mechanical arm provides Ultrasonic energy.

2. The semiconductor silicon wafer cleaning device according to claim 1, wherein the movement range of the mechanical cantilever is limited to the upper side and the left and right sides of the silicon wafer and does not touch the side wall of the cleaning water tank.

3. The semiconductor silicon wafer cleaning device according to claim 1, characterized in that: said ultrasonic oscillation generator is a columnar ultrasonic oscillation generator.

4. The semiconductor silicon wafer cleaning device as claimed in claim 1, wherein said ultrasonic oscillator is a point ultrasonic oscillator.

5. The semiconductor silicon wafer cleaning device according to claim 1, characterized in that the frequency used by the ultrasonic oscillator is 250 kHz to 2 MHz.

6. The semiconductor silicon wafer cleaning device according to claim 1, characterized in that the power per unit area generated by the ultrasonic oscillator on the surface of the silicon wafer is 0.5-5 watts/square centimeter.

7. A method for cleaning semiconductor silicon wafers. First, the semiconductor silicon wafers are placed on a silicon wafer bracket, and the silicon wafer bracket carrying the silicon wafers is placed in a cleaning water tank filled with cleaning liquid. It is characterized in that: the The cleaning device for the semiconductor silicon wafer used in the cleaning method comprises a mechanical cantilever and at least one ultrasonic oscillator set on the mechanical cantilever, and the method also includes the following steps:

a. Start the mechanical cantilever and the ultrasonic oscillator installed on the mechanical cantilever;

b. The mechanical cantilever extends into the water tank and moves according to the preset path.

8. The method for cleaning semiconductor silicon wafers according to claim 7, wherein the movement range of the mechanical cantilever is limited to the upper side and the left and right sides of the silicon wafer and does not touch the side walls of the cleaning tank.

9. The method for cleaning semiconductor silicon wafers according to claim 7, characterized in that: said ultrasonic oscillator is a columnar ultrasonic oscillator.

10. The method for cleaning semiconductor silicon wafers as claimed in claim 7, characterized in that: said ultrasonic oscillation generator is a point ultrasonic oscillation generator.

11. The method for cleaning semiconductor silicon wafers according to claim 7, characterized in that the frequency used by the ultrasonic oscillator is 250 kHz to 2 MHz.

12. The method for cleaning semiconductor silicon wafers according to claim 7, characterized in that the power per unit area generated by the ultrasonic oscillator on the surface of the silicon wafer is 0.5-5 watts/square centimeter.