CN1979840A - Flat panel display and method of fabricating the same - Google Patents
Flat panel display and method of fabricating the same Download PDFInfo
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- CN1979840A CN1979840A CN200610162075.5A CN200610162075A CN1979840A CN 1979840 A CN1979840 A CN 1979840A CN 200610162075 A CN200610162075 A CN 200610162075A CN 1979840 A CN1979840 A CN 1979840A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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Abstract
A flat panel display and a method of fabricating the same are provided. The flat panel display includes a conductor, and a passivation layer pattern disposed on a side end of the conductor. As such, the passivation layer pattern can prevent or reduce corrosion and damage of the conductor. In one embodiment, the conductor includes a conductive layer formed of a material selected from the group consisting of aluminum and an aluminum alloy. The passivation layer pattern may be formed of an organic material or an inorganic material.
Description
Quoting of related application
The application requires priority and the rights and interests of the korean patent application No.10-2005-123994 that submits in Korea S Department of Intellectual Property in the korean patent application No.10-2005-120759 that submitted in Korea S Department of Intellectual Property on December 9th, 2005 and on December 15th, 2005, at this its full content is incorporated herein by reference.
Technical field
The present invention relates to flat-panel monitor and manufacture method thereof.
Background technology
Flat-panel monitor such as LCD, organic light emitting display, inorganic light-emitting display uses aluminium based metal to reduce interconnection impedance.
In manufacture process, the easy etched solution of aluminium based metal conductor damages.
Summary of the invention
The invention provides a kind of flat-panel monitor and manufacture method thereof, it can be avoided the conductor of (or obstruction) such as electrode, interconnecting parts etc. to be corroded in manufacture process or corrode.More particularly, one aspect of the present invention provides a kind of flat-panel monitor and manufacture method thereof, and it can avoid (or minimizing) to comprise the corrosion and the damage of the conductor of interconnecting parts.
In first exemplary embodiment of the present invention, flat-panel monitor comprises: conductor; With the passivation layer pattern on the side that is arranged on this conductor.
In second exemplary embodiment of the present invention, flat-panel monitor comprises: Organic Light Emitting Diode, it comprise first electrode, second electrode and be arranged on first electrode and second electrode between organic layer, this organic layer has luminescent layer; Be electrically connected to the interconnecting parts (interconnection) of Organic Light Emitting Diode; Passivation layer pattern with the side that is arranged on this interconnecting parts.
In the 3rd exemplary embodiment of the present invention, flat-panel monitor comprises: active layer; Gate electrode with this active layer insulation; With this grid electrode insulating but the source electrode that is electrically connected with active layer; With grid electrode insulating but the drain electrode that is electrically connected with active layer; With the passivation layer pattern on the side one of at least that is arranged in gate electrode, source electrode or the drain electrode.
In the 4th exemplary embodiment of the present invention, flat-panel monitor comprises: be positioned on the substrate and have the thin-film transistor of source electrode and drain electrode; Place on the substrate and be arranged in the non-light-emitting area of this substrate and the interconnecting parts that is electrically connected with thin-film transistor; The passivation layer pattern that is arranged on the complanation layer and the part one of at least of source electrode and drain electrode is come out, this passivation layer pattern further is arranged on the side of interconnecting parts; With the Organic Light Emitting Diode that is electrically connected to thin-film transistor.
In the 5th exemplary embodiment of the present invention, provide a kind of method of making flat-panel monitor.This method comprises: form the thin-film transistor with source electrode and drain electrode on substrate; Form interconnecting parts on substrate and in the non-light-emitting area of this substrate, this interconnecting parts is electrically connected to the thin-film transistor that is positioned on the substrate; On substrate, form complanation layer, to cover this thin-film transistor and interconnecting parts at least; The patterning complanation layer, the complanation layer pattern on through hole that comes out with a part that forms source electrode or drain electrode and the side that is arranged on this interconnecting parts; And formation is electrically connected to the Organic Light Emitting Diode of source electrode and drain electrode.
Description of drawings
Accompanying drawing illustrates exemplary embodiment of the present invention with application documents, and with specification with the principle of the present invention that lays down a definition.
Fig. 1 is the sectional view that is included in the conductor in the flat-panel monitor according to an exemplary embodiment of the present invention;
Fig. 2 is the sectional view that is included in the conductor in the flat-panel monitor of another exemplary embodiment according to the present invention;
Fig. 3 is the sectional view of organic light emitting display according to an exemplary embodiment of the present invention;
Fig. 4 A, 4B, 4C and 4D are the sectional views that illustrates the method for making organic light emitting display according to an exemplary embodiment of the present invention.
Embodiment
In following detailed description,, illustrated and described the specific exemplary embodiment of the present invention only simply by the mode of example.It should be appreciated by those skilled in the art that described embodiment can make amendment according to various mode, and does not break away from the spirit or scope of the present invention.Therefore, accompanying drawing and describe is regarded as exemplary rather than restrictive in essence.And, in the context of the present invention, when an element another element " on " time, it can be directly on another element, also can be indirectly on this another element, between be inserted with one or more elements between two parties.In whole application documents, the similar similar element of Reference numeral indication.
Fig. 1 is the sectional view that is included in the conductor 10 in the flat-panel monitor according to an exemplary embodiment of the present invention.
The side surface of conductor 10 is around passivation layer pattern 20 is arranged.Passivation layer pattern 20 is formed by insulating material, and around conductor 10, thereby protection conductor 10 avoids contacting the etching solution, etchant of the side surface that may be penetrated into conductor 10 etc.
And as shown in Figure 2, the conductor 10 ' of another exemplary embodiment is formed with the sandwich construction that comprises aluminum or aluminum alloy according to the present invention.
As shown in Figure 2, conductor 10 ' comprises first conductive layer 11, second conductive layer 12 and the 3rd conductive layer 13, and they deposit (or depositing successively) adjacent to each other.Here, second conductive layer 12 can be formed by aluminum or aluminum alloy, for example, and Al, AlSi, AlNd, AlCu etc.
When second conductive layer 12 is formed by aluminium based metal, from the group that following material is formed, select can the comprising one of at least of first conductive layer 11 and the 3rd conductive layer 13 one of at least: Cr, Cr alloy, Mo, Mo alloy, W and W alloy.
As an example, first conductive layer 11 and the 3rd conductive layer 13 can be formed by MoW, and second conductive layer 12 can be formed by AlNd.Yet the present invention is not limited thereto.
And, when second conductive layer 12 is formed by aluminium based metal, from the group that following material is formed, select can the comprising one of at least of first conductive layer 11 and the 3rd conductive layer 13 one of at least: Ti, Ti alloy, Ta and Ta alloy.
As an example, first conductive layer 11 and the 3rd conductive layer 13 can be formed by the Ti Base Metal, and second conductive layer 12 can be formed by the Al Base Metal.
Yet the present invention is not limited thereto, and, except this three-decker, can increase independent layer, to form sandwich construction.
Even have at conductor 10 ' under the situation of sandwich construction, passivation layer pattern 20 also can be formed by insulating material, and covers the side of conductive layer 10 '.Passivation layer pattern 20 can be formed by above-mentioned material.That is to say, when passivation layer pattern 20 is formed by organic material, organic material can comprise from the group that following material is formed, select one of at least: have the polymer derivant of phenylol, based on the polymer of propylene, based on imido polymer, based on the polymer of aryl ether, based on the polymer of acid amides, based on the polymer of fluorine, based on the polymer of p-silirene, based on the polymer and the combination thereof of vinyl alcohol.In one embodiment, passivation layer pattern 20 can be made up of the material based on propylene.In one embodiment, be photosensitive material based on the material of propylene, thereby be convenient to the formation of pattern based on propylene.When passivation layer pattern 20 is formed by inorganic material, inorganic material can comprise from the group that following material is formed, select one of at least: SiO
2, SiN
x, SiON, Al
2O
3, TiO
2, Ta
2O
3, HfO
2, ZrO
2, BST, PZT and combination thereof.
As mentioned above; when conductor 10 ' forms sandwich construction; can be owing to second conductive layer 12 be have higher relatively conductivity aluminium base, and improve the conductivity of conductor 10, and can utilize first conductive layer 11 and the 3rd conductive layer 13 protections second conductive layer 12.In addition, can utilize the passivation layer pattern 20 that is formed on second conductive layer, 12 sides to avoid the corrosion and the erosion of aluminium base second conductive layer 12 that (or reduce) cause owing to the infiltration of etchant etc.
Said structure can be used in the various zones, for example the outside of the pixel of flat-panel monitor and luminous zone.
Fig. 3 is the sectional view of organic light emitting display according to an exemplary embodiment of the present invention.
As shown in Figure 3, thin-film transistor (TFT) 40 and Organic Light Emitting Diode (OLED) are arranged on the substrate 31.
Insulating barrier 32 such as barrier layer and/or resilient coating can be formed on the substrate 31, avoiding (or the reduce) diffusion of foreign ion and infiltration of moisture or extraneous air, and the surface of planarization substrate.
The active layer 41 of thin-film transistor 40 uses semi-conducting material to be formed on the insulating barrier 32, and gate insulator 33 is formed covering active layer 41.Active layer 41 can be formed by inorganic semiconductor material such as amorphous silicon or polysilicon or organic semiconducting materials, and comprises source area 412, drain region 413 and be arranged on channel region 411 between the two.
Gate insulator 33, interlayer insulating film 34 and passivation layer 35 can be formed by the insulating material of single or multiple lift structure, also can be formed by organic material, inorganic material or organic/inorganic mixture.
The depositional fabric of above-mentioned thin-film transistor 40 is not limited to this, but can adopt various other suitable structures.
Still as shown in Figure 3, first electrode 51 is electrodes of Organic Light Emitting Diode OLED, and it is formed on the passivation layer 35, and pixel qualification layer 37 is formed on first electrode 51.Opening 38 is formed on pixel and limits in the layer 37, so that first electrode 51 is come out, is formed with the organic layer 52 of OLED OLED subsequently.
Organic Light Emitting Diode OLED is according to the mobile emission red, green and blue light of electric current, with displays image information.Here, Organic Light Emitting Diode OLED comprise first electrode 51, be used to cover second electrode 53 of whole pixel and have luminescent layer by through hole 36 contact drain electrodes 44 and be arranged on first electrode 51 and second electrode 53 between so that luminous organic layer 52.
The polymer organic layer can have the structure that comprises hole transmission layer (HTL) and luminescent layer (EML).Here, hole transmission layer can be formed by PEDOT, and luminescent layer can be by forming based on poly--phenylene vinylidene (PPV) or based on the polymer organic material that gathers fluorenes.Hole transmission layer and luminescent layer can be used formation such as silk screen print method, ink jet printing method.
Yet organic layer of the present invention is not limited to organic layer shown in Figure 3.
In Fig. 3, first electrode 51 is as anode electrode, and second electrode 53 is as cathode electrode.Interchangeable, first electrode 51 is as cathode electrode, and second electrode 53 is as anode electrode.
If the organic light emitting display of Fig. 3 is an end light emitting-type, first electrode 51 can be a transparency electrode so, and second electrode 53 can be a reflecting electrode.Here, can be as the transparency electrode of first electrode 51 by the ITO with higher relatively work function, IZO, In
2O
3, formation such as ZnO, and can form by the metal such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca or its mixture as the reflecting electrode of second electrode 53.
If the organic light emitting display of Fig. 3 is the top light emitting-type, first electrode 51 can be a reflecting electrode so, and second electrode can be a transparency electrode.Here, the reflecting electrode as first electrode 51 can form the reflector by using Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca or its composition, ITO, IZO, In that use subsequently has higher relatively work function
2O
3, cambium layer such as ZnO makes.In addition, the metal such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca or its composition as the transparency electrode of second electrode 53 can have relatively low work function by deposition use subsequently such as ITO, IZO, In
2O
3, ZnO etc. transparent conductive material form auxiliary electrode layer or the bus electrode line is made.
If the organic light emitting display of Fig. 3 is two light emitting-types, first electrode 51 and second electrode 53 can form transparency electrode so.
After being formed with OLED OLED, its top sealed (or sealing hermetically) is to avoid Organic Light Emitting Diode OLED contact extraneous air.
In addition, gate electrode 42, source electrode 43 and drain electrode 44 can comprise the metal material such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca or its combination, perhaps such as ITO, IZO, In
2O
3, ZnO etc. transparent conductive material.In addition, can use the conductive paste of conducting electricity organic material or comprising the conducting particles such as Ag, Mg, Cu.
In addition, as shown in Figure 2, electrode can form three-decker.
As shown in Figure 3, according to exemplary embodiment of the present invention, gate electrode 42 has single layer structure, and source electrode 43 and drain electrode 44 have three-decker, but the present invention is not limited thereto.For example, the various suitable combination of said structure can be used as electrode.Hereinafter, as shown in Figure 3, more detailed description gate electrode 42 had the structure that single layer structure and source electrode 43 and drain electrode 44 have three-decker.
As mentioned above, when second conductive layer 432 and 442 is formed by aluminium based metal, from the group that following material is formed, select can comprise one of at least in first conductive layer 431 and the 441 or the 3rd conductive layer 433 and 443 one of at least: Cr, Cr alloy, Mo, Mo alloy, W and W alloy.
For example, first conductive layer 431 and the 441 and the 3rd conductive layer 433 and 443 can be formed by MoW, and second conductive layer 432 and 442 can be formed by AlNd, similar in appearance to the conductor of Fig. 2.
When second conductive layer 432 and 442 is formed by aluminium based metal, from the group that Ti, Ti alloy, Ta and Ta alloy are formed, select can comprise one of at least in first conductive layer 431 and the 441 or the 3rd conductive layer 433 and 443 one of at least.
For example, first conductive layer 431 and the 441 and the 3rd conductive layer 433 and 443 can be formed by the metal based on Ti, and second conductive layer 432 and 442 can be formed by the metal based on Al.
Yet the present invention is not limited thereto, and can add independent layer structure in three-decker.
Even have under the situation of sandwich construction at source electrode 43 and drain electrode 44, also can use insulating material to form passivation layer pattern 45, make it cover the side of source electrode 43 and drain electrode 44.Passivation layer pattern 45 can be formed by above mentioned material.That is to say, when passivation layer pattern 45 was formed by organic material, organic material can be by forming one of at least of selecting the group of forming from following material: have the polymer derivant of phenylol, based on the polymer of propylene, based on imido polymer, based on the polymer of aryl ether, based on the polymer of acid amides, based on the polymer of fluorine, based on the polymer of p-silirene, based on the polymer and the combination thereof of vinyl alcohol.In one embodiment, passivation layer pattern 45 is formed by the material based on propylene.In one embodiment, be photosensitive material based on the material of propylene, thereby be convenient to the formation of pattern based on propylene.When passivation layer pattern 45 was formed by inorganic material, inorganic material can be by forming one of at least of selecting the group of forming from following material: SiO
2, SiN
x, SiON, Al
2O
3, TiO
2, Ta
2O
3, HfO
2, ZrO
2, BST, PZT and combination thereof.
As mentioned above; when source electrode 43 and drain electrode 44 formation sandwich constructions; might be because second conductive layer 432 and 442 be have relative higher conductivity aluminium base; and the conductivity of raising source electrode 43 and drain electrode 44, and might utilize first conductive layer 431 and the 441 and the 3rd conductive layer 433 and 443 protection second conductive layers 432 and 442.In addition, might utilize the passivation layer pattern 45 that is formed on second conductive layer 432 and 442 sides to avoid aluminium base second conductive layer 432 that (or reduce) cause owing to the infiltration of etchant etc. and 442 corrosion and erosion.Particularly, when first electrode 51 is patterned, more help protecting source electrode 43 and drain electrode 44 to avoid the infiltration of etchant.
In addition, when forming source electrode 43 and drain electrode 44, can further form interconnecting parts 60.Interconnecting parts 60 can be the Vdd power line, but is not limited to this, and various suitable interconnecting parts can be suitable for the image element circuit of organic light emitting display.Interconnecting parts 60 with source electrode 43 and drain electrode 44 form also has first conductive layer 601, second conductive layer 602 and the 3rd conductive layer 603.First conductive layer 601, second conductive layer 602 and the 3rd conductive layer 603 can be by forming with above-mentioned conductive identical materials.
Even under the situation of interconnecting parts 60, passivation layer pattern 61 also can form as mentioned above like that.That is to say, because it is basic identical with formation source electrode 43 and drain electrode 44 modes to form the mode of passivation layer pattern 61, so its detailed description is not provided here.
When forming source electrode 43 and drain electrode 44, can form the various conductors that comprise interconnecting parts 60 in the pixel.For example, as shown in Figure 3, bus bar 70 can be provided with contiguously with second electrode 53.Bus bar 70 with source electrode 43 and drain electrode 44 form also can have first conductive layer 701, second conductive layer 702 and the 3rd conductive layer 703.First conductive layer 701, second conductive layer 702 and the 3rd conductive layer 703 can be by forming with above-mentioned conductive identical materials.Bus bar 70 contacts with second electrode 53 by the through hole 39 that is formed in the passivation layer 35, to allow that electric power is offered second electrode 53.
Even under the situation of bus bar 70, passivation layer pattern 71 also can be according to forming with the essentially identical mode of aforesaid way.That is to say, because it is basic identical with the mode that forms source electrode 43 and drain electrode 44 to form the mode of passivation layer pattern 71, so its detailed description is not provided here.
Although passivation layer pattern can have the structure of the side that covers conductor, the present invention is not limited to this.Interchangeable, passivation layer pattern can have the structure that covers whole conductor.
As mentioned above, the passivation layer pattern of the embodiment of the invention can be applied in the various conductive structures of flat-panel monitor.That is to say, though the foregoing description be described at organic light emitting display, these embodiment in being used in organic light emitting display, can also be used in various other suitable flat-panel monitors, for example LCD etc.
Fig. 4 A to Fig. 4 D is the sectional view that illustrates the method for making organic light emitting display according to an exemplary embodiment of the present invention.
Referring to Fig. 4 A, insulating barrier 32 is formed on the substrate 31, to avoid (or hinder) impurity such as metal ion from substrate 31 diffusions and be penetrated into the active layer 41.
After forming insulating barrier 32, amorphous silicon be deposited with crystallization on insulating barrier 32, to form polysilicon layer, subsequently, the patterned polysilicon layer is to form active layer 41.
Then, gate insulator 33 is deposited on the whole surface of the substrate that comprises active layer 41, and deposits gate metal on gate insulator 33, and patterned to form gate electrode 42.
After forming gate electrode 42, the impurity of predetermined conductivity type utilizes gate electrode 42 to be doped in the active layer 41 as mask, to form source area 412 and drain region 413.Zone between source area 412 and the drain region 413 does not have impurity, as the channel region 411 of thin-film transistor.
In active layer 41, form after source area 412 and the drain region 413, on the whole surface of substrate, form interlayer insulating film 34, be included on the active layer 41, and in interlayer insulating film 34, form contact hole so that the part of source area 412 and drain region 413 is come out.
Electric conducting material is deposited on the interlayer insulating film 34, be included on the contact hole, subsequently, patterning conductive material, so that form the source electrode 43 and the drain electrode 44 that link to each other with drain region 413 by contact hole and source area 412, thereby finish the thin-film transistor that comprises active layer 41, gate electrode 42, source electrode 43 and drain electrode 44.
When forming source electrode 43 and drain electrode 44, interconnecting parts 80 is formed in the non-light-emitting area of substrate 31, so that external circuit module and thin-film transistor are electrically connected.That is to say that interconnecting parts 80 is electrically connected to TFT and external circuit module.
Here, in order to improve the corrosion resistance of 80 pairs of external environment conditions of interconnecting parts, source electrode 43, drain electrode 44 and interconnecting parts 80 can be formed by the material of selecting the group of forming from following material: Ti/Al, Ti/Al alloy (AlSi, AlNd and equivalent thereof), Ti/Al/Ti, Ti/TiN/Al/TiN/Ti, Ti/TiN/AlSi/TiN/Ti and Ti/Al alloy/Ti.
After the source of formation electrode 43, drain electrode 44 and interconnecting parts 80, complanation layer 46 is formed on the substrate that comprises source electrode 43, drain electrode 44 and interconnecting parts 80, to finish the TFT panel.Here, complanation layer 46 can be formed by the material of selecting the group of forming from following material: propylene, polyimides (PI), benzocyclobutene (BCB), silicon-on-glass hydrochlorate (silicate-on-glass, SOG) and equivalent, so that can fill and lead up the step of low structure.In addition, complanation layer 46 can be formed by spin coating and/or the described material of slit full-filling.
Referring to Fig. 4 B, form complanation layer 46, patterned subsequently, with the through hole 36 that a part that forms one of source electrode 43 and drain electrode 44 comes out, for example the part with drain electrode 44 comes out.Here, when forming through hole 36, form the passivation layer pattern 81 that has opening 81a and be arranged on the example end of interconnecting parts 80, its split shed 81a comes out the part of interconnecting parts 80.
Referring to Fig. 4 C, after forming through hole 36 and passivation layer pattern 81, form and be electrically connected to one of source electrode 43 and drain electrode 44, for example be electrically connected to first electrode 51 of drain electrode 44 by through hole 36.
In Fig. 4 C, first electrode 51 can be formed by transparent or semitransparent conductive layer.In one embodiment, first electrode 51 can comprise one or more layers that is formed by selected material the group of forming from following material: ITO, IZO, ITZO and equivalent thereof, promptly has the metal oxide of indium.For example, first electrode 51 can comprise the structure of (or IZO, ITZO)/Al (or Al alloy), ITO (or IZO, ITZO)/Al (or Al alloy)/ITO (or IZO, ITZO) etc. that has ITO.
Referring to Fig. 4 D, after forming first electrode 51, pixel limits layer 37 and is deposited on the whole surface of the substrate that comprises first electrode 51, and is patterned, the opening 38 that comes out with a part that forms first electrode 51.Here, the pixel qualification layer 37 that also will be arranged in the non-light-emitting area of substrate 31 is removed.
Then, the organic layer 52 that comprises luminescent layer is formed on the pixel that comprises opening 38 and limits on the layer 37.
In addition, in an embodiment of the present invention, organic layer 52 then forms luminescent layer (EML) by forming hole injection layer (HIL), hole transmission layer (HTL) in opening, and forms hole blocking layer (HBL), electron transfer layer (ETL) and electron injecting layer (EIL) subsequently and form.
After forming organic layer 52, on organic layer 52, form second electrode 53, to finish the Organic Light Emitting Diode that comprises first electrode 51, organic layer 52 and second electrode 53.
Then, package substrate can be installed on the Organic Light Emitting Diode, to utilize sealant package substrate 31, wherein be formed with TFT and Organic Light Emitting Diode on the substrate 31, yet metal interconnected part 80 is electrically connected to the external circuit module, thereby finishes organic light emitting display according to an exemplary embodiment of the present invention.
Organic light emitting display comprises source electrode 43, drain electrode 44 and interconnecting parts 80 according to an exemplary embodiment of the present invention, and they are by forming one of at least of selecting the group of forming from following material: Ti/Al, Ti/Al alloy (AlSi, AlNd and equivalent thereof), Ti/Al/Ti, Ti/TiN/Al/TiN/Ti, Ti/TiN/AlSi/TiN/Ti and Ti/Al alloy/Ti, thus improve the corrosion resistance of 80 pairs of external environment conditions of interconnecting parts.
In addition, first electrode 51 generally carries out patterning by wet etching and forms.Because interconnecting parts 80 is formed by sedimentary deposit as mentioned above, and the side of interconnecting parts 80 is by passivation layer pattern 81 protections, so might avoid (or minimizing) damage by the caused interconnecting parts 80 of wet etching.
In addition, by the part of complanation layer 46 is removed, might reduce the influence of getter action and the life-span of increase Organic Light Emitting Diode.
According to aforementioned viewpoint, embodiments of the invention provide a kind of organic light emitting display and manufacture method thereof, and it can improve the corrosion resistance of the metal interconnected part in the TFT panel non-light-emitting area.
Though described the present invention in conjunction with specific exemplary embodiment, but it should be appreciated by those skilled in the art, the present invention is not limited to the disclosed embodiments, on the contrary, this invention is intended to cover the interior various modifications of spirit and scope that are included in appended claims and are equal to replacement.
Claims (42)
1, a kind of flat-panel monitor comprises:
Conductor; With
Be arranged on the passivation layer pattern on the side of this conductor.
2, flat-panel monitor according to claim 1, wherein said conductor comprise the conductive layer that is formed by the material of selecting from the group that aluminium and aluminium alloy are formed.
3, flat-panel monitor according to claim 2, wherein said conductor comprises first conductive layer, second conductive layer and the 3rd conductive layer, wherein said second conductive layer deposition is between described first conductive layer and the 3rd conductive layer, and described second conductive layer is formed by the material of selecting from the group that aluminium and aluminium alloy are formed.
4, flat-panel monitor according to claim 3, from the group of forming by Cr, Cr alloy, Mo, Mo alloy, W and W alloy, select comprising one of at least in wherein said first conductive layer or the 3rd conductive layer one of at least.
5, flat-panel monitor according to claim 3, from the group of being formed by Ti, Ti alloy, Ta and Ta alloy, select comprising one of at least in wherein said first conductive layer or the 3rd conductive layer one of at least.
6, flat-panel monitor according to claim 1, wherein said passivation layer pattern is formed by organic material.
7, flat-panel monitor according to claim 6, wherein said passivation layer pattern are by forming one of at least of selecting the group of forming from following material: have the polymer derivant of phenylol, based on the polymer of propylene, based on imido polymer, based on the polymer of aryl ether, based on the polymer of acid amides, based on the polymer of fluorine, based on the polymer of p-silirene, based on the polymer and the combination thereof of vinyl alcohol.
8, flat-panel monitor according to claim 1, wherein said passivation layer pattern is formed by inorganic material.
9, flat-panel monitor according to claim 8, wherein said passivation layer pattern is by forming one of at least of selecting the group of forming from following material: SiO
2, SiN
x, SiON, Al
2O
3, TiO
2, Ta
2O
3, HfO
2, ZrO
2, BST and PZT.
10, a kind of flat-panel monitor comprises:
Organic Light Emitting Diode, it comprises first electrode, second electrode and places organic layer between this first electrode and second electrode that this organic layer has luminescent layer;
Be electrically connected to the interconnecting parts of described Organic Light Emitting Diode; With
Be arranged on the passivation layer pattern on the side of this interconnecting parts.
11, flat-panel monitor according to claim 10, wherein said interconnecting parts comprise the conductive layer that is formed by the material of selecting from the group that aluminium and aluminium alloy are formed.
12, flat-panel monitor according to claim 11, wherein said interconnecting parts comprises first conductive layer, second conductive layer and the 3rd conductive layer, wherein said second conductive layer deposition is between described first conductive layer and the 3rd conductive layer, and described second conductive layer is formed by the material of selecting from the group that aluminium and aluminium alloy are formed.
13, flat-panel monitor according to claim 12 comprises one of at least the material of selecting in wherein said first conductive layer or the 3rd conductive layer from the group of being made of Cr, Cr alloy, Mo, Mo alloy, W and W alloy.
14, flat-panel monitor according to claim 12 comprises one of at least the material of selecting in wherein said first conductive layer or the 3rd conductive layer from the group of being made of Ti, Ti alloy, Ta and Ta alloy.
15, flat-panel monitor according to claim 10, wherein said passivation layer pattern is formed by organic material.
16, flat-panel monitor according to claim 15, wherein said passivation layer pattern is formed by the material of selecting the group of forming from following material: have the polymer derivant of phenylol, based on the polymer of propylene, based on imido polymer, based on the polymer of aryl ether, based on the polymer of acid amides, based on the polymer of fluorine, based on the polymer of p-silirene, based on the polymer and the combination thereof of vinyl alcohol.
17, flat-panel monitor according to claim 10, wherein said passivation layer pattern is formed by inorganic material.
18, flat-panel monitor according to claim 17, wherein said passivation layer pattern is formed by the material of selecting the group of forming from following material: SiO
2, SiN
x, SiON, Al
2O
3, TiO
2, Ta
2O
3, HfO
2, ZrO
2, BST and PZT.
19, flat-panel monitor according to claim 10, wherein said interconnecting parts are electrically connected to second electrode of described Organic Light Emitting Diode.
20, flat-panel monitor according to claim 10, wherein said interconnecting parts are the power supply interconnecting parts that is electrically connected to described Organic Light Emitting Diode.
21, flat-panel monitor according to claim 10, wherein said interconnecting parts are the signal interconnection part that is electrically connected to described Organic Light Emitting Diode.
22, a kind of flat-panel monitor comprises:
Active layer;
Gate electrode with this active layer insulation;
With this grid electrode insulating and the source electrode that is electrically connected with described active layer;
With described grid electrode insulating and the drain electrode that is electrically connected with described active layer; With
Place the passivation layer pattern on the side one of at least of described gate electrode, source electrode or drain electrode.
23, flat-panel monitor according to claim 22, forming one of at least in wherein said gate electrode, source electrode and the drain electrode by the material of from the group that aluminium and aluminium alloy are formed, selecting.
24, flat-panel monitor according to claim 23, one of at least comprise first conductive layer, second conductive layer and the 3rd conductive layer in wherein said gate electrode, source electrode and the drain electrode, wherein said second conductive layer deposition is between described first conductive layer and the 3rd conductive layer, and described second conductive layer is formed by the material of selecting from the group that aluminium and aluminium alloy are formed.
25, flat-panel monitor according to claim 24 comprises one of at least the material of selecting in described first conductive layer or the 3rd conductive layer from the group of being made of Cr, Cr alloy, Mo, Mo alloy, W and W alloy.
26, flat-panel monitor according to claim 24 comprises one of at least the material of selecting in described first conductive layer or the 3rd conductive layer from the group of being made of Ti, Ti alloy, Ta and Ta alloy.
27, flat-panel monitor according to claim 22, wherein said passivation layer pattern is formed by organic material.
28, flat-panel monitor according to claim 27, wherein said passivation layer pattern is formed by the material of selecting the group of forming from following material: have the polymer derivant of phenylol, based on the polymer of propylene, based on imido polymer, based on the polymer of aryl ether, based on the polymer of acid amides, based on the polymer of fluorine, based on the polymer of p-silirene, based on the polymer and the combination thereof of vinyl alcohol.
29, flat-panel monitor according to claim 22, wherein said passivation layer pattern is formed by inorganic material.
30, flat-panel monitor according to claim 29, wherein said passivation layer pattern is formed by the material of selecting the group of forming from following material: SiO
2, SiN
x, SiON, Al
2O
3, TiO
2, Ta
2O
3, HfO
2, ZrO
2, BST and PZT.
31, a kind of flat-panel monitor comprises:
Be positioned on the substrate and have the thin-film transistor of source electrode and drain electrode;
Place on the described substrate and be arranged in the non-light-emitting area of this substrate and be electrically connected to the interconnecting parts of described thin-film transistor;
The passivation layer pattern that places on the complanation layer and the part one of at least of described source electrode or drain electrode is come out, this passivation layer pattern further places on the side of described interconnecting parts; With
Be electrically connected to the Organic Light Emitting Diode of described thin-film transistor.
32, flat-panel monitor according to claim 31, wherein said source electrode, drain electrode and interconnecting parts are formed by the material of selecting the group of forming from following material: Ti/Al, Ti/Al alloy, Ti/Al/Ti, Ti/TiN/Al/TiN/Ti, Ti/TiN/AlSi/TiN/Ti and Ti/Al alloy/Ti.
33, flat-panel monitor according to claim 32, wherein said Al alloy comprise from by the material of selecting the group that AlSi and AlNd formed.
34, flat-panel monitor according to claim 31, wherein said complanation layer and passivation layer pattern are formed by the material of selecting the group of forming from propylene, polyimides (PI), benzocyclobutene (BCB) and silicon-on-glass hydrochlorate (SOG).
35, flat-panel monitor according to claim 31, wherein said Organic Light Emitting Diode comprises:
Be electrically connected to the source electrode of described thin-film transistor or first electrode of drain electrode;
The pixel that comprises the opening that the part with described first electrode comes out limits layer;
Comprise luminescent layer and place organic layer on first electrode that comes out by described opening; With
Place second electrode on the described organic layer.
36, flat-panel monitor according to claim 35, wherein said first electrode is formed by one or more layers that comprises the metal oxide that contains indium.
37, flat-panel monitor according to claim 31, wherein said thin-film transistor further comprises:
Place on the described substrate, and comprise the active layer of source area, channel region and drain region;
Place on the described substrate to cover the gate insulator of described active layer at least;
Place described gate insulator corresponding to the gate electrode on the zone of described active layer; With
Place on the described substrate covering the interlayer insulating film of described gate electrode at least,
Wherein said source electrode and drain electrode place on the described interlayer insulating film, and are electrically connected to described source area and drain region respectively, and wherein said interconnecting parts places on the identical layer with described source electrode and drain electrode.
38, a kind of method of making flat-panel monitor, this method comprises:
On substrate, form thin-film transistor with source electrode and drain electrode;
Form interconnecting parts on described substrate and in the non-light-emitting area of this substrate, this interconnecting parts is electrically connected to the thin-film transistor that is positioned on the described substrate;
On described substrate, form complanation layer, to cover described thin-film transistor and interconnecting parts at least;
The described complanation layer of patterning, the passivation layer pattern on through hole that comes out with a part that forms described source electrode or drain electrode and the side that is arranged on described interconnecting parts; With
Formation is electrically connected to organic diode of giving out light of described source electrode and drain electrode.
39, according to the described method of claim 38, wherein said source electrode, drain electrode and interconnecting parts are formed by the material of selecting the group of forming from following material: Ti/Al, Ti/Al alloy, Ti/Al/Ti, Ti/TiN/Al/TiN/Ti, Ti/TiN/AlSi/TiN/Ti and Ti/Al alloy/Ti.
40, according to the described method of claim 39, wherein said Al alloy comprises from by the material of selecting the group that AlSi and AlNd formed.
41, according to the described method of claim 38, wherein said complanation layer and passivation layer pattern are formed by selected material the group of forming from propylene, polyimides (PI), benzocyclobutene (BCB) and silicon-on-glass hydrochlorate (SOG).
42, according to the described method of claim 38, wherein said complanation layer forms by spin coating or slit full-filling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410291383.2A CN104201186B (en) | 2005-12-09 | 2006-12-08 | Flat-panel monitor and its manufacture method |
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| KR1020050120759 | 2005-12-09 | ||
| KR1020050120759A KR100685841B1 (en) | 2005-12-09 | 2005-12-09 | Oled and method of fabricting the same |
| KR1020050123994 | 2005-12-15 |
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| CN201410291383.2A Division CN104201186B (en) | 2005-12-09 | 2006-12-08 | Flat-panel monitor and its manufacture method |
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|---|---|
| KR (1) | KR100685841B1 (en) |
| CN (1) | CN1979840A (en) |
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| KR100685841B1 (en) | 2007-02-22 |
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