CN1963673A - Infiltrating type micro-image exposal apparatus and method thereof - Google Patents
Infiltrating type micro-image exposal apparatus and method thereof Download PDFInfo
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- CN1963673A CN1963673A CN 200510115208 CN200510115208A CN1963673A CN 1963673 A CN1963673 A CN 1963673A CN 200510115208 CN200510115208 CN 200510115208 CN 200510115208 A CN200510115208 A CN 200510115208A CN 1963673 A CN1963673 A CN 1963673A
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Abstract
This invention relates to one dipped micro image exposure device and its method, which is suitable for dipped micro image bubble elimination during exposure period and comprises optical system to project light onto crystal circle through light cover and optical transfer chamber is near to above optical system to load exposure liquid; at least one million Hertz super wave board to combine to optical transfer chamber to generate sound wave to eliminate exposure micro bubble.
Description
Technical field
The present invention relates to a kind of micro-photographing process, be applied in the making of SIC (semiconductor integrated circuit), on photoresistance, to make integrated circuit patterns, particularly relate to a kind of megahertz level ultrasonic infiltrating type micro-image exposal apparatus and method, wherein soak into liquid and be subjected to the sound wave concussion, with the bubble in the liquid that during little shadow step of exposure, disappears.
Background technology
Generally speaking, making integrated circuit on semiconductor crystal wafer is to have used various treatment steps.These steps comprise: depositing conducting layer on the long-pending material of Silicon Wafer; Utilize the formation of standard lithographic or photolithography techniques to have photoresistance or other cover curtain, for example titanium dioxide or the monox of required metal interconnecting pattern; Wafer substrate is carried out the dry-etching processing procedure, remove conductive layer never to be subjected to covering an act zone that covers, thereby the shape etch with cover curtain pattern goes out conductive layer on base material; Reactive electricity slurry of general using or chlorine remove or divest cover curtain layer from base material, thereby expose the upper surface of conductive interconnector layer; And wafer substrate applied water and nitrogen, with cooling and dry wafer substrate.
In the general ic manufacturing technology of known dual-metal inserting technology, deposition is hanged down and higher dielectric layer on base material in regular turn.The lower dielectric layer of patterning and etching is opened on wherein to form interlayer hole, and patterning and the higher dielectric layer of etching are opened on wherein to form irrigation canals and ditches.In etching step, utilize patterned photoresist layer trench etched and interlayer hole opening in the dielectric layer of correspondence.Then, utilize galvanochemistry to electroplate (Electrochemical Plating usually; ECP) technology forms the conduction copper cash in irrigation canals and ditches and interlayer hole opening, uses formation level and vertical integrated circuit interconnector on base material.
Wafer is when fixing bowl (Stationary Bowl) or be coated with the rotation of inflammatory blepharoedema (Coater Cup) high speed, general using is spilt the mode of lighting bluff body in the central authorities of wafer, photoresist is coated on the surface of wafer, perhaps on the dielectric layer or conductive layer on the wafer.Be coated with inflammatory blepharoedema and during photoresistance forms, catch excess fluid and the particulate that penetrates from the wafer of rotation.Spill cloth and be subjected to rotating the surface tension that centrifugal force caused of wafer, and outwards scatter towards the edge of wafer at the photoresistance fluid of the central authorities of wafer.Thus, help the liquid photoresistance is formed uniformly on the whole surface of wafer.
During little shadow step of semiconductor production, luminous energy is applied on the photoresist that is deposited on earlier on the wafer through scheming cover (Reticle) or light shield (Mask), use and define circuit pattern, the circuit pattern that wherein is defined on the photoresist will be subjected to etching in subsequent processing steps, use and define circuit on wafer.The figure cover is a kind of transparent panel, the patterned circuit image that has in the photoresistance overlayer of desiring to be formed on the wafer on it.This figure cover only includes the circuit pattern image of some crystal grain on the wafer, and therefore four crystal grain for example must be across the whole surface of wafer in the mode of stepping and repetition.In comparison, light shield comprises the circuit pattern image of all crystal grains on the wafer, and only needs exposure together, can be with the circuit pattern image transfer of all crystal grains to wafer.
Cover the rotary coating step of carrying out the photoresistance on the wafer in machine/developing machine rail system at the robotization figure that uses wafer-process equipment, and other steps in the micro-photographing process, wherein, wafer-process equipment can be at each little shadow active station, for example initial gas phase photoresistance rotary coating, development, baking and cooling stations, between transmit wafer.The robotization of wafer is handled and the generation of particulate and the damage of wafer can be reduced to minimum.The robotization wafer track can make various processing operations carry out simultaneously.The robotization rail system that is applied at present this industry widely has two kinds, and one is (the Tokyo Electron Limited of Tokyo Electron Ltd; TEL) track, it two is (the Silicon ValleyGroup of Silicon Valley group; SVG) track.
On wafer, make a kind of typical method of circuit pattern, comprise wafer is imported in the robotization rail system, again with the photoresist layer rotary coating on wafer.Next, carry out soft baking journey and handle photoresistance.After to be cooled, wafer is put into exposure sources, stepper is for example being aimed at wafer by the mode of the grain pattern of an array on the quartz figure cover that chromium was covered usually with etched in alignment.suitably aim at focus on after, a fraction of zone of stepper exposed wafer, then move or " stepping " to next zone, and repeat such program and under the grain pattern on the figure cover, be exposed until whole crystal column surface.Light transmission figure cover exposes to photoresistance and forms the circuit image pattern.The photoresistance that is subjected to the exposure of this image pattern partly produces commissure and sclerosis and forms circuit pattern.After aligning and step of exposure, wafer is carried out postexposure bake handle, again through developing and baking firmly, to develop the photoresistance pattern.
Next; utilize etch process will be transferred to the metal level of below by the circuit pattern that photoresistance defined after development and the sclerosis; the metal that photoresistance covered that wherein will not be subjected to commissure from wafer metal level gives etching and removes, and then is protected and can not be subjected to removing of etchant defining metal below the commissure photoresistance of element characteristics.In addition, suffer etched material also to can be dielectric layer, for example in the dual-metal inserting technology, in this dielectric layer, etch interlayer hole opening and ditch channel opening according to circuit pattern.Then, with conducting metal, for example copper is filled interlayer hole opening and ditch channel opening, to define plain conductor.Thus, form the metallization microelectronic circuit of the pattern with appropriate definition on wafer, wherein the pattern of this metallization microelectronic circuit quite is similar to the photoresistance circuit pattern of commissure.
A kind of little shadow type that is applied in manufacture of semiconductor industry is an immersion lithography, and employed a kind of exposure sources comprises light shield and several lens in immersion lithography, and these light shields and lens are arranged in the optics transfer chamber.By this optics transfer chamber, scatter moisture exposure liquid.During operation, the optics transfer chamber is positioned at the top, exposure field on the wafer that photoresistance covers.When scattering exposure liquid by the optics transfer chamber, light sees through light shield, lens and the exposure liquid in the optics transfer chamber respectively and is sent on the photoresistance in exposure field.Therefore, transmit by light by exposure liquid, can be to photoresistance with the circuit pattern image transfer in the light shield.Exposure liquid in the optics transfer chamber can improve the resolution of circuit pattern image on photoresistance of transmission.
Before scattering exposure liquid, usually the gas in the liquid as the water is got rid of, from liquid, to remove most microbubble by the optics transfer chamber.Yet during liquid scattered by the optics transfer chamber, some microbubbles still can be deposited in the liquid.These residual microbubbles trend towards attached to being typically the probably photoresistance surface of water, thereby make the circuit pattern image distortion that is projected to photoresistance.Therefore, need a kind of apparatus and method for badly, can be in the immersion lithography processing procedure essence eliminate microbubble in the exposure liquid, to prevent to be projected to the circuit pattern image distortion on the photoresistance in the exposure field.
Summary of the invention
The objective of the invention is to, overcome the defective that existing little shadow exposure sources and method exist, and a kind of novel device is provided, technical matters to be solved be make its can be before immersion lithography or during essence eliminate microbubble in the exposure liquid.
Another object of the present invention is to, a kind of megahertz level ultrasonic exposure sources of novelty is provided, technical matters to be solved be make its can be before the immersion lithography processing procedure carries out or during essence eliminate the microbubble of exposure liquid.
Another purpose of the present invention is, a kind of megahertz level ultrasonic exposure sources of novelty is provided, and technical matters to be solved is to make it can be lifted at the quality that is projected to the circuit pattern image on the photoresistance during the immersion lithography.
A further object of the present invention is, a kind of megahertz level ultrasonic exposure sources of novelty is provided, and technical matters to be solved is to make it be to use sound wave, with before the immersion lithography or during essence eliminate the microbubble of exposure liquid.
A further object of the present invention is, a kind of megahertz level ultrasonic immersion lithography exposure method of novelty is provided, and technical matters to be solved is to make it be to use sound wave, with before the immersion lithography or during essence eliminate the microbubble of exposure liquid.
A further object of the present invention is, a kind of megahertz level ultrasonic immersion lithography exposure method of novelty is provided, technical matters to be solved is to make it be to use sound wave, with before the immersion lithography or during essence eliminate microbubble and particulate on exposure lens.
The object of the invention to solve the technical problems realizes by the following technical solutions.According to a kind of infiltrating type micro-image exposal apparatus that the present invention proposes, it comprises at least: an optics transfer chamber, in order to load an exposure liquid; One ultrasonic plate operationally engages with this optics transfer chamber, to propagate a plurality of sound waves by this exposure liquid; And an optical system, be adjacent to this optics transfer chamber, a light source can be imported this exposure liquid.
The object of the invention to solve the technical problems also adopts following technical measures further to realize.
Aforesaid infiltrating type micro-image exposal apparatus, it comprises an entry conductor more at least, this entry conductor and the circulation of this optics transfer chamber, this exposure liquid is disseminated in this optics transfer chamber, wherein this entry conductor supports this ultrasonic plate.
Aforesaid infiltrating type micro-image exposal apparatus, it comprises a delivery channel more at least, this delivery channel and the circulation of this optics transfer chamber are to scatter this exposure liquid from this optics transfer chamber.
Aforesaid infiltrating type micro-image exposal apparatus, wherein said optical system comprises a laser at least, pass this light shield and lens to launch a laser beam, use from this light shield and receive a circuit pattern image, and this circuit pattern image is sent on the wafer by this exposure liquid.
Aforesaid infiltrating type micro-image exposal apparatus, wherein said ultrasonic plate comprise the megahertz level ultrasonic plate of ring-type roughly at least, around living this optics transfer chamber.
The object of the invention to solve the technical problems also realizes by the following technical solutions.According to a kind of method that removes microbubble from the exposure liquid of immersion lithography processing procedure that the present invention proposes, it may further comprise the steps at least: a light shield is provided, and this light shield has a circuit pattern; One exposure liquid is provided; Propagate a plurality of sound waves via this exposure liquid; And utilize a light beam is sent to mode on the wafer of photoresistance covering by this light shield and this exposure liquid respectively, this wafer exposes.
The object of the invention to solve the technical problems also adopts following technical measures further to realize.
The aforesaid method that from the exposure liquid of immersion lithography processing procedure, removes microbubble, the wherein said step of propagating those sound waves via this exposure liquid be included at least before this wafer that the exposure photoresistance covers or during propagate those sound waves by this exposure liquid.
The aforesaid method that removes microbubble from the exposure liquid of immersion lithography processing procedure, wherein said exposure liquid comprise ammonium, the hydrogen peroxide potpourri with water at least.
The aforesaid method that removes microbubble from the exposure liquid of immersion lithography processing procedure, wherein said exposure liquid comprises deionized water or Ozone Water at least.
The aforesaid method that removes microbubble from the exposure liquid of immersion lithography processing procedure, it comprises more at least provides an interfacial agent in this exposure liquid.
The aforesaid method that from the exposure liquid of immersion lithography processing procedure, removes microbubble, the wherein said step of propagating those sound waves via this exposure liquid is included in the supersonic power of a megahertz level at least and during to essence 1000kHz, propagates those sound wave via this exposure liquid between essence 10kHz.
The object of the invention to solve the technical problems also adopts following technical scheme to realize.A kind of immersion lithography processing procedure according to the present invention's proposition, at least may further comprise the steps: a megahertz level ultrasonic infiltrating type micro-image exposal apparatus is provided, this megahertz level ultrasonic infiltrating type micro-image exposal apparatus comprises an optical system, an optics transfer chamber at least between the wafer that one of this optical system nearest object lens and photoresistance cover, and at least one megahertz level ultrasonic plate engages with this optics transfer chamber; One light shield is provided, and wherein this light shield has a circuit pattern; Provide one first liquid in this optics transfer chamber; Propagate a plurality of sound waves by this first liquid; Provide one second liquid in this optics transfer chamber; And by transmitting a laser beam respectively by this optical system and this second liquid and the mode on this wafer that arrives, this wafer exposes.
The object of the invention to solve the technical problems also adopts following technical measures further to realize.
Aforesaid immersion lithography processing procedure, wherein said first liquid comprise ammonium, the hydrogen peroxide potpourri with water at least.
Aforesaid immersion lithography processing procedure, wherein said first liquid comprises deionized water or Ozone Water at least.
Aforesaid immersion lithography processing procedure, wherein said second liquid comprises deionized water or interfacial agent at least.
The present invention compared with prior art has tangible advantage and beneficial effect.By above technical scheme as can be known, major technique of the present invention thes contents are as follows:
According to above-mentioned these and other purpose and advantage, the present invention generally is the megahertz level ultrasonic infiltrating type micro-image exposal apparatus that directs at a kind of novelty, in order to before the immersion lithography, during or simultaneously before with during essence from exposure liquid, eliminate microbubble.In one embodiment, this equipment comprises the optics transfer chamber, and the top, the optical box that are positioned at the wafer that is covered by photoresistance are equiped with light shield and lens, and is positioned at top, optics transfer chamber and entry conductor, is disseminated in the optics transfer chamber in order to will soak into liquid.At least one megahertz level ultrasonic plate operationally engages with entry conductor, to make sound wave incessantly by soaking into liquid by entry conductor and when being disseminated in the optics transfer chamber at infiltration liquid.Sound wave essence is eliminated the microbubble in the exposure liquid, and liquid is entered in the optics transfer chamber with the bubble-free state of essence, is beneficial to the carrying out of step of exposure.In another embodiment, this exposure sources has ring-type megahertz level ultrasonic plate and is looped around outside the optics transfer chamber.
The present invention also directs at the method that a kind of essence is eliminated the microbubble in the exposure liquid, and wherein this exposure liquid is to be applied in the immersion lithography processing procedure, so that the circuit pattern image is transferred on the wafer that photoresistance covered from light shield or figure cover.This method be included in exposure liquid scatter by before the optics transfer chamber of infiltrating type micro-image exposal apparatus, during or before with during, see through exposure liquid and propagate sound wave.These sound wave essence are eliminated the microbubble in exposure liquids, and remove microbubble from the photoresistance surface, thereby can prevent microbubble attached to the photoresistance on the crystal column surface, and prevent that slave unit is sent to circuit pattern image distortion on the photoresistance by exposure liquid.
The present invention more directs at a kind of essence and eliminates the microbubble and the method for particulate on the exposure lens, and wherein this exposure lens is to be applied in the immersion lithography processing procedure, so that the circuit pattern image is transferred on the wafer of photoresistance covering from light shield or figure cover.This method be included in exposure liquid scatter by before the optics transfer chamber of infiltrating type micro-image exposal apparatus, during or before with during, see through exposure liquid and propagate sound wave.This method also is included in before the exposure manufacture process, during or before with during, change exposure liquid.These sound wave essence are eliminated microbubble and the particulate on lens surfaces, thereby can prevent on microbubble and the surface of particulate attached to the lens that expose, and can prevent that slave unit is sent to circuit pattern image distortion on the photoresistance by exposure liquid.
By technique scheme, infiltrating type micro-image exposal apparatus of the present invention and method have following advantage at least:
Novel device of the present invention, can be before immersion lithography or during essence eliminate microbubble in the exposure liquid.
The megahertz level ultrasonic exposure sources of novelty of the present invention, can be before the immersion lithography processing procedure carries out or during essence eliminate the microbubble of exposure liquid.
The megahertz level ultrasonic exposure sources of novelty of the present invention can be lifted at the quality that is projected to the circuit pattern image on the photoresistance during the immersion lithography.
The megahertz level ultrasonic exposure sources of novelty of the present invention, it is to use sound wave, and can before the immersion lithography or during essence eliminate the microbubble of exposure liquid.
The megahertz level ultrasonic immersion lithography exposure method of novelty of the present invention, it is to use sound wave, and can before the immersion lithography or during essence eliminate the microbubble of exposure liquid.
The megahertz level ultrasonic immersion lithography exposure method of novelty of the present invention, it is to use sound wave, and can before the immersion lithography or during essence eliminate microbubble and particulate on exposure lens.
In sum, the invention relates to a kind of infiltrating type micro-image exposal apparatus and method, it is applicable to the microbubble in the essence elimination exposure liquid during immersion lithography.This equipment comprises optical system, can light be projected on the wafer through light shield.The optics transfer chamber is adjacent to above-mentioned optical system, to load exposure liquid.At least one megahertz level ultrasonic plate movably is bonded on the optics transfer chamber, producing sound wave in exposure liquid, and can eliminate the microbubble in the exposure liquid.It has above-mentioned plurality of advantages and practical value, and in like product and method, do not see have similar structures design and method to publish or use and really genus innovation, no matter it all has bigger improvement on product structure, method or function, have technically than much progress, and produced handy and practical effect, and more existing little shadow exposure sources and method have the multinomial effect of enhancement, thereby be suitable for practicality more, and have the extensive value of industry, really be a new and innovative, progressive, practical new design.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of instructions, and for above-mentioned and other purposes, feature and advantage of the present invention can be become apparent, below especially exemplified by preferred embodiment, and conjunction with figs., be described in detail as follows.
Description of drawings
Fig. 1 is the synoptic diagram according to a kind of megahertz level ultrasonic immersion lithography equipment of the present invention's first preferred embodiment.
Fig. 2 is the synoptic diagram according to a kind of megahertz level ultrasonic immersion lithography equipment of the present invention's first preferred embodiment.
Fig. 3 A is the process flow diagram according to the order of a kind of fabrication steps of the present invention's first preferred embodiment.
Fig. 3 B is the process flow diagram according to the order of a kind of fabrication steps of the present invention's second preferred embodiment.
Fig. 3 C is the process flow diagram according to the order of a kind of fabrication steps of the present invention's the 3rd preferred embodiment.
Fig. 3 D is the process flow diagram according to the order of a kind of fabrication steps of the present invention's the 4th preferred embodiment.
Fig. 3 E is the process flow diagram according to the order of a kind of fabrication steps of the present invention's the 5th preferred embodiment.
Fig. 3 F is the process flow diagram according to the order of a kind of fabrication steps of the present invention's the 6th preferred embodiment.
1: the optics transfer chamber is placed top, exposure field
1a: the optics transfer chamber is placed top, exposure field
1b: the optics transfer chamber is placed top, exposure field
1c: the optics transfer chamber is placed top, exposure field
1d: the optics transfer chamber is placed top, exposure field
1e: the optics transfer chamber is placed top, exposure field
2: open megahertz level ultrasonic plate 2a: open megahertz level ultrasonic plate
2b: open megahertz level ultrasonic plate 2c: open megahertz level ultrasonic plate
2d: open megahertz level ultrasonic plate 2e: open megahertz level ultrasonic plate
3: see through feed line and scatter liquid 3a: see through feed line and scatter liquid
3b: see through feed line and scatter liquid 3c: see through feed line and scatter liquid
3d: see through feed line and scatter the first liquid 3e: see through feed line and scatter first liquid
4: close megahertz level ultrasonic plate
4a: see through the optics transfer chamber photoresistance is exposed
4b: see through the optics transfer chamber photoresistance is carried out time shutter having a rest property ground operation megahertz level ultrasonic plate
4c: see through the optics transfer chamber photoresistance is exposed
4d: see through feed line and scatter second liquid
4e: see through feed line and scatter second liquid
5: see through the optics transfer chamber photoresistance is exposed
5a: close megahertz level ultrasonic plate
5b: move to next exposure field
5c: move to next exposure field
5d: close megahertz level ultrasonic plate
5e: see through the optics transfer chamber photoresistance is exposed
6: move to next exposure field
6a: move to next exposure field
6c: see through the optics transfer chamber photoresistance is exposed
6d: see through the optics transfer chamber photoresistance is exposed
6e: move to next exposure field 7c: move to next exposure field
7d: move to next exposure field 10: exposure sources
10a: exposure sources 12: optical box
13: optical system 14: light shield
15: laser 15a: laser beam
15b: circuit pattern image 16: object lens
18: the water infiltration chamber 20 that optics shifts: the inlet liquid storing tank
22: entry conductor 22a: draining pipe
24: delivery channel 24a: collecting duct
26: outlet liquid storing tank 28: wafer platform
30: megahertz level ultrasonic plate 30a: megahertz level ultrasonic plate
32: exposure liquid 34: wafer
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, to infiltrating type micro-image exposal apparatus and its embodiment of method, structure, method, step, feature and the effect thereof that foundation the present invention proposes, describe in detail as after.
The present invention is the megahertz level ultrasonic infiltrating type micro-image exposal apparatus of a kind of novelty of research, in order to before the immersion lithography, during or simultaneously before with during essence from exposure liquid, eliminate microbubble.In one embodiment, this equipment comprises optical box, installs in this optical box and is provided with light shield and lens.Below the lens of optical box, be provided with the optics transfer chamber.Entry conductor and the circulation of optics transfer chamber are disseminated in the optics transfer chamber will soak into liquid.At least one megahertz level ultrasonic plate operationally engages with entry conductor, to make sound wave incessantly by soaking into liquid by entry conductor and when being disseminated in the optics transfer chamber at infiltration liquid.In another embodiment, ring-type megahertz level ultrasonic plate is around the optics transfer chamber of equipment.
During this equipment of operation, the optics transfer chamber is arranged on the top in the exposure field on the wafer that photoresistance covers.The sound wave essence that one or more megahertz level ultrasonic plate is produced is eliminated the microbubble in the exposure liquid, thereby makes the liquid that enters the optics transfer chamber be in the bubble-free state of essence.During step of exposure, light sees through the light shield and the lens of optical box respectively, and sees through the exposure liquid of optics transfer chamber, and is sent on the photoresistance that covers on the wafer.The bubble-free exposure liquid of essence can transmit circuit pattern image that essence do not have distortion on photoresistance, and has high-res.
The present invention more directs at the method that a kind of essence is eliminated the microbubble in the exposure liquid, wherein this exposure liquid is applied in the step of exposure of immersion lithography processing procedure, so that the circuit pattern image is transferred to exposure field on the wafer that photoresistance covered from light shield or figure cover.In first embodiment, this method comprises that seeing through exposure liquid propagates sound wave, to eliminate the microbubble in the liquid before step of exposure.In a second embodiment, this method be included in before the step of exposure with during, see through exposure liquid and propagate sound wave.In the 3rd embodiment, this method is included in during the step of exposure, intermittently sees through exposure liquid and propagates sound wave.Single one or more megahertz level ultrasonic plates are preferably the megahertz level ultrasonic power that exposure liquid provided and are about 10kHz to 1000kHz.
Any various exposure liquid all is applicable to megahertz level ultrasonic immersion lithography method of the present invention.In one embodiment, this exposure liquid comprises ammonium, hydrogen peroxide and water, and concentration is generally volume ratio between about 1: 1 to 1: 1000.In another embodiment, this exposure liquid comprises ammonium and water, and concentration is generally between about 1: 10 to 1: 1000.In another embodiment, this exposure liquid is a deionized water.In an embodiment again, this exposure liquid is Ozone Water (OzonatedWater), and generally has ozone concentration between about 1ppm to 1000ppm.This exposure liquid can comprise non-ionic surfactant, teepol or cation interfacial active agent, and concentration is usually between about 1ppm to 1000ppm.
Please at first consult shown in Figure 1ly, indicate megahertz level ultrasonic infiltrating type micro-image exposal apparatus of the present invention with figure number 10, hereinafter to be referred as exposure sources.This exposure sources 10 comprises the wafer platform 28 in order to supporting wafer 34, and wherein wafer 34 has photoresist layer (not illustrating among the figure) deposition thereon.Optical box 12 includes optical system 13, and wherein this optical system has laser 15 and nearest object lens (lastobjective lens) 16, and these object lens 16 are positioned at the top of wafer platform 28.In light shield or figure cover 14 optical boxes 12 that movably are embedded above object lens 16.Light shield or figure cover 14 are included in the circuit pattern (not illustrating among the figure) on the photoresist layer of desiring to be transferred to during the micro-photographing process on the wafer 34, and this micro-photographing process will be illustrated following.The water infiltration chamber 18 that optics shifts is positioned at nearest object lens 16 times, and is positioned on the wafer platform 28.During micro-photographing process, laser beam 15a is through light shield or scheme cover 14 and generation circuit pattern image 15b, and wherein circuit pattern image 15b transmitted the water infiltration chamber 18 of nearest object lens 16 and optics transfer respectively, and was projected on the wafer 34.
The stock that inlet liquid storing tank 20 is equipped with exposure liquid 32, wherein entry conductor 22 extends from inlet liquid storing tank 20.Draining pipe 22a extends from entry conductor 22, and circulates in the water infiltration chamber of being arranged to shift with optics 18.Outlet liquid storing tank 26 is arranged to pass through collecting duct 24a and delivery channel 24 respectively and is circulated with the water infiltration chamber 18 that optics shifts.According to the present invention, megahertz level ultrasonic plate 30 is arranged on the entry conductor 22, according to the technical know-how of haveing the knack of this skill person, when exposure liquid 32 scattered via entry conductor 22, megahertz level ultrasonic plate 30 can produce sound wave (not illustrating among the figure) in exposure liquid 32.
When operating this exposure sources 10, further describe as following, exposure liquid 32 is from 20 distributions of inlet liquid storing tank and pass through entry conductor 22 and draining pipe 22a respectively, and enters the water infiltration chamber 18 that optics shifts.Megahertz level ultrasonic plate 30 produces sound wave (not illustrating among the figure) in exposure liquid 32, and eliminates in the exposure liquid 32 all or most microbubble.The laser beam 15a that is sent by optical box 12 produces circuit pattern image 15b, and these circuit pattern images 15b is respectively by nearest object lens 16 and the exposure liquid 32 that is contained in the water infiltration chamber 18 that optics shifts, and is projected on the photoresistance that covers on the wafer 34.Exposure liquid 32 is constantly extracted out from the water infiltration chamber 18 that optics shifts, and passes collecting duct 24a respectively and enter with delivery channel 24 and export in the liquid storing tank 26.
Next, see also Fig. 3 A to Fig. 3 C and shown in Figure 1, can be according to wherein a kind of operation exposure sources 10 of following three kinds of patterns.According to the process flow diagram of Fig. 3 A, as described in step 1, the water infiltration chamber 18 that optics is shifted is placed on the top in the exposure field on the wafer 34 earlier.Then, open megahertz level ultrasonic plate 30 (steps 2), from inlet liquid storing tank 20 and through entry conductor 22 exposure liquid 32 is disseminated to the water infiltration chamber 18 (step 3) that optics shifts respectively again.When exposure liquid 32 passed through entry conductor 22, megahertz level ultrasonic plate 30 produced sound wave in exposure liquid 32.Sound wave can be eliminated the microbubble in the exposure liquid 32, and makes exposure liquid 32 not have the existence of microbubble in the porch essence of the water infiltration chamber 18 that enters the optics transfer.In addition, be sent to the water infiltration chamber 18 that optics shifts by sound wave from draining pipe 22a, sound wave also can be eliminated the lip-deep microbubble of photoresistance.
As described in step 4, with the circuit pattern image exposure before on the exposure field on the wafer 34, open megahertz level ultrasonic plate 30, (step 5) transmits wherein above-mentioned circuit pattern image, and exposure liquid 32 transmits and is not subjected to the microbubble influence and on the high-res circuit pattern image of the distortion photoresistance surface to the wafer 34 by exposure liquid 32.After step of exposure 5 was finished, the water infiltration chamber 18 that optics is shifted moved to next the exposure field on the wafer 34, and repeats step 1-5, as described in step 6.
According to the process flow diagram of Fig. 3 B, the water infiltration chamber 18 that optics is shifted is placed on the top in the exposure field on the wafer 34 earlier, as described in step 1a.Then, open megahertz level ultrasonic plate 30 (step 2a), from inlet liquid storing tank 20 and through entry conductor 22 exposure liquid 32 is disseminated to the water infiltration chamber 18 (step 3a) that optics shifts respectively again.The sound wave that megahertz level ultrasonic plate 30 is produced can be eliminated by the microbubble in the exposure liquid 32 of entry conductor 22, and make exposure liquid 32 not have the existence of microbubble, and thereby can eliminate attached to the microbubble on the wafer 34 in the porch essence of the water infiltration chamber 18 that enters the optics transfer.
As described in step 4a,, the photoresistance on the wafer 34 is exposed when megahertz level ultrasonic plate 30 continues to open down.Therefore, during step of exposure (step 4a), megahertz level ultrasonic plate 30 continues to eliminate in the exposure liquid 32 and the lip-deep microbubble of photoresistance on the wafer 34.So the circuit pattern image 15b that transmits the water infiltration chamber 18 of shifting by optics from optical box 12 can not be subjected to the influence of microbubble and distortion, and then can be projected on the photoresistance surface on the wafer 34 high-res.After step of exposure 4a finishes, megahertz level ultrasonic plate 30 can be closed (step 5a).Then, the water infiltration chamber 18 that optics is shifted moves to next the exposure field on the wafer 34, and repeats step 1a-5a, as described in step 6a.
According to the process flow diagram of Fig. 3 C, the water infiltration chamber 18 that optics is shifted is placed on the top in the exposure field on the wafer 34 earlier, as described in step 1b.Then, open megahertz level ultrasonic plate 30 (step 2b), from inlet liquid storing tank 20 and via entry conductor 22 exposure liquid 32 is disseminated to the water infiltration chamber 18 (step 3b) that optics shifts again respectively.The sound wave that megahertz level ultrasonic plate 30 is produced can eliminate in the exposure liquid 32 with wafer 34 on the lip-deep microbubble of photoresistance, and make existence that exposure liquid 32 essence on the photoresistance upper surface of porch that enters the water infiltration chamber 18 that optics shifts and wafer 34 do not have a microbubble and stick.
As described in step 4b, under megahertz level ultrasonic plate 30 intermittently opens and closes, carry out step of exposure.Therefore, between the exposure period of wafer, megahertz level ultrasonic plate 30 continues to eliminate the microbubble in the exposure liquid 32.After step of exposure 4b finished, the water infiltration chamber 18 that optics is shifted moved to next the exposure field on the wafer 34, and repeats step 1b-5b, as described in step 5b.
According to the process flow diagram of Fig. 3 D, the water infiltration chamber 18 that optics is shifted is placed on the top in the exposure field on the wafer 43 earlier, as described in step 1c.Then, open megahertz level ultrasonic plate 30 (step 2c), from inlet liquid storing tank 20 and through entry conductor 22 exposure liquid 32 is disseminated to the water infiltration chamber 18 (step 3c) that optics shifts respectively again.The sound wave that megahertz level ultrasonic plate 30 is produced can be eliminated by the microbubble in the exposure liquid 32 of entry conductor 22, and make exposure liquid 32 not have the existence of microbubble, and thereby can eliminate attached to the microbubble on the wafer 34 in the porch essence of the water infiltration chamber 18 that enters the optics transfer.
As described in step 4c,, the photoresistance on the wafer 34 is exposed when megahertz level ultrasonic plate 30 continues to open down.Therefore, during step of exposure (step 4c), megahertz level ultrasonic plate 30 continues to eliminate in the exposure liquid 32 and the lip-deep microbubble of photoresistance on the wafer 34.So the circuit pattern image that transmits the water infiltration chamber 18 of shifting by optics from optical box 12 can not be subjected to the influence of microbubble and distortion, and then can be projected on the photoresistance surface on the wafer 34 high-res.After step of exposure 4c finished, megahertz level ultrasonic plate 30 can be kept opening.Then, the water infiltration chamber 18 that optics is shifted moves to next the exposure field (step 5c) on the wafer 34, and the photoresistance on the 18 pairs of wafers 34 in water infiltration chamber that shift by optics exposes (step 6c), and repeats step 5c-6c, as described in step 7c.
According to the process flow diagram of Fig. 3 E, the water infiltration chamber 18 that optics is shifted is placed on the top in the exposure field on the wafer 34 earlier, as described in step 1d.Then, open megahertz level ultrasonic plate 30 (step 2d), from inlet liquid storing tank 20 and through entry conductor 22 exposure liquid 32 is disseminated to the water infiltration chamber 18 (step 3d) that optics shifts respectively again.The sound wave that megahertz level ultrasonic plate 30 is produced can be eliminated by the microbubble in the exposure liquid 32 of entry conductor 22, and remove attached to the particulate on the lower surface of nearest object lens 16, and make exposure liquid 32 not have the existence of microbubble, and thereby can eliminate attached to the particulate on the lower surface of nearest object lens 16 in the porch essence of the water infiltration chamber 18 that enters the optics transfer.
As described in step 4d, when megahertz level ultrasonic plate 30 continues to open down,, again the photoresistance on the wafer 34 is exposed to replace the first road liquid (step 4d) from inlet liquid storing tank 20 and the water infiltration chamber 18 of shifting through entry conductor 22 and with the second road liquid dissemination to optics.Therefore, during step of exposure (step 6d), megahertz level ultrasonic plate 30 is not opened (step 5d).So the circuit pattern image 15b that transmits the water infiltration chamber 18 of shifting by optics from optical box 12 can not be subjected to the influence of particulate and distortion, but and then high-res be projected on the photoresistance surface on the wafer 34.After step of exposure 6d finished, then the water infiltration chamber 18 that optics is shifted moved to next the exposure field on the wafer 34, and repeats step 6d-7d, as described in step 6d.
According to the process flow diagram of Fig. 3 F, the water infiltration chamber 18 that optics is shifted is placed on the top in the exposure field on the wafer 34 earlier, as described in step 1e.Then, open megahertz level ultrasonic plate 30 (step 2e), from inlet liquid storing tank 20 and through entry conductor 22 exposure liquid 32 is disseminated to the water infiltration chamber 18 (step 3e) that optics shifts respectively again.The sound wave that megahertz level ultrasonic plate 30 is produced can be eliminated by the microbubble in the exposure liquid 32 of entry conductor 22, and remove attached to the particulate on the lower surface of nearest object lens 16, and make exposure liquid 32 not have the existence of microbubble, and thereby can eliminate attached to the particulate on the lower surface of nearest object lens 16 in the porch essence of the water infiltration chamber 18 that enters the optics transfer.
As described in step 4e, when megahertz level ultrasonic plate 30 continues to open down,, again the photoresistance on the wafer 34 is exposed to replace the first road liquid (step 4e) from inlet liquid storing tank 20 and the water infiltration chamber 18 of shifting through entry conductor 22 and with the second road liquid dissemination to optics.Therefore, during step of exposure (step 5e), megahertz level ultrasonic plate 30 is still kept unlatching (step 2e).So the circuit pattern image 15b that transmits the water infiltration chamber 18 of shifting by optics from optical box 12 can not be subjected to the influence of particulate and distortion, but and then high-res be projected on the photoresistance surface on the wafer 34.After step of exposure 5e finished, then the water infiltration chamber 18 that optics is shifted moved to next the exposure field on the wafer 34, and repeats step 5e-6e, as described in step 5e.
Next, see also shown in Figure 2ly, in another alternate embodiment of exposure sources, 10a indicates with figure number.The megahertz level ultrasonic plate 30a of ring-type is around living the water infiltration chamber 18 that optics shifts.Can be according to the flowchart operation exposure sources 10a of Fig. 3 A, wherein the megahertz level ultrasonic plate 30a of ring-type is disseminated to the water infiltration chamber 18 back operations that optics shifts at exposure liquid 32, and closes before step of exposure; Also can be according to the process flow diagram of Fig. 3 B, wherein during exposure liquid 32 is disseminated to the water infiltration chamber 18 that optics shifts and during whole exposure manufacture process, the megahertz level ultrasonic plate 30a of ring-type keeps opening; Perhaps can be according to the process flow diagram of Fig. 3 C, wherein the megahertz level ultrasonic plate 30a of ring-type opens on step of exposure discontinuous ground.Under any state, be contained in the existence that exposure liquid 32 in the water infiltration chamber 18 that optics shifts does not have microbubble in fact, otherwise in the circuit pattern image 15b distortion that may cause during the step of exposure being sent on the wafer 34.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the method that can utilize above-mentioned announcement and technology contents are made a little change or be modified to the equivalent embodiment of equivalent variations, but every content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (15)
1, a kind of infiltrating type micro-image exposal apparatus is characterized in that it comprises at least:
One optics transfer chamber is in order to load an exposure liquid;
One ultrasonic plate operationally engages with this optics transfer chamber, to propagate a plurality of sound waves by this exposure liquid; And
One optical system is adjacent to this optics transfer chamber, a light source can be imported this exposure liquid.
2, infiltrating type micro-image exposal apparatus according to claim 1, it is characterized in that it comprises an entry conductor more at least, this entry conductor and the circulation of this optics transfer chamber, this exposure liquid is disseminated in this optics transfer chamber, wherein this entry conductor supports this ultrasonic plate.
3, infiltrating type micro-image exposal apparatus according to claim 2 is characterized in that it comprises a delivery channel more at least, and this delivery channel and the circulation of this optics transfer chamber are to scatter this exposure liquid from this optics transfer chamber.
4, infiltrating type micro-image exposal apparatus according to claim 3, it is characterized in that wherein said optical system comprises a laser at least, pass this light shield and lens to launch a laser beam, use from this light shield and receive a circuit pattern image, and this circuit pattern image is sent on the wafer by this exposure liquid.
5, infiltrating type micro-image exposal apparatus according to claim 1 is characterized in that wherein said ultrasonic plate comprises the megahertz level ultrasonic plate of ring-type roughly at least, around living this optics transfer chamber.
6, a kind of method that removes microbubble from the exposure liquid of immersion lithography processing procedure is characterized in that it may further comprise the steps at least:
One light shield is provided, and this light shield has a circuit pattern;
One exposure liquid is provided;
Propagate a plurality of sound waves via this exposure liquid; And
Utilization is sent to mode on the wafer that photoresistance covers by this light shield and this exposure liquid respectively with a light beam, and this wafer exposes.
7, the method that from the exposure liquid of immersion lithography processing procedure, removes microbubble according to claim 6, it is characterized in that the wherein said step of propagating those sound waves via this exposure liquid is included in before this wafer that the exposure photoresistance covers at least or during propagate those sound waves by this exposure liquid.
8, the method that removes microbubble from the exposure liquid of immersion lithography processing procedure according to claim 6 is characterized in that wherein said exposure liquid comprises ammonium, the hydrogen peroxide potpourri with water at least.
9, the method that removes microbubble from the exposure liquid of immersion lithography processing procedure according to claim 6 is characterized in that wherein said exposure liquid comprises deionized water or Ozone Water at least.
10, the method that removes microbubble from the exposure liquid of immersion lithography processing procedure according to claim 6, it is characterized in that it comprises more at least provides an interfacial agent in this exposure liquid.
11, the method that from the exposure liquid of immersion lithography processing procedure, removes microbubble according to claim 6, it is characterized in that the wherein said step of propagating those sound waves via this exposure liquid is included in the supersonic power of a megahertz level at least and during to essence 1000kHz, propagates those sound wave via this exposure liquid between essence 10kHz.
12, a kind of immersion lithography processing procedure is characterized in that it may further comprise the steps at least:
One megahertz level ultrasonic infiltrating type micro-image exposal apparatus is provided, this megahertz level ultrasonic infiltrating type micro-image exposal apparatus comprise at least an optical system, an optics transfer chamber between between one of this optical system nearest object lens and the wafer that photoresistance covers and at least one megahertz level ultrasonic plate engage with this optics transfer chamber;
One light shield is provided, and wherein this light shield has a circuit pattern;
Provide one first liquid in this optics transfer chamber;
Propagate a plurality of sound waves by this first liquid;
Provide one second liquid in this optics transfer chamber; And
Mode by transmission one laser beam passes through this optical system and this second liquid respectively on this wafer that arrives, this wafer exposes.
13, immersion lithography processing procedure according to claim 12 is characterized in that wherein said first liquid comprises ammonium, the hydrogen peroxide potpourri with water at least.
14, immersion lithography processing procedure according to claim 12 is characterized in that wherein said first liquid comprises deionized water or Ozone Water at least.
15, immersion lithography processing procedure according to claim 12 is characterized in that wherein said second liquid comprises deionized water or interfacial agent at least.
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| CN 200510115208 CN1963673A (en) | 2005-11-11 | 2005-11-11 | Infiltrating type micro-image exposal apparatus and method thereof |
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| CN 200510115208 CN1963673A (en) | 2005-11-11 | 2005-11-11 | Infiltrating type micro-image exposal apparatus and method thereof |
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