CN1558285A - Active type array liquid crystal display - Google Patents
Active type array liquid crystal display Download PDFInfo
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- CN1558285A CN1558285A CNA2004100031171A CN200410003117A CN1558285A CN 1558285 A CN1558285 A CN 1558285A CN A2004100031171 A CNA2004100031171 A CN A2004100031171A CN 200410003117 A CN200410003117 A CN 200410003117A CN 1558285 A CN1558285 A CN 1558285A
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- 239000004973 liquid crystal related substance Substances 0.000 title description 2
- 229910052751 metal Inorganic materials 0.000 claims abstract description 77
- 239000002184 metal Substances 0.000 claims abstract description 77
- 239000003990 capacitor Substances 0.000 claims abstract description 28
- 239000010409 thin film Substances 0.000 claims abstract description 17
- 239000011521 glass Substances 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 239000010410 layer Substances 0.000 claims description 42
- 239000011159 matrix material Substances 0.000 claims description 39
- 238000009413 insulation Methods 0.000 claims description 20
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 14
- 230000001681 protective effect Effects 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000011241 protective layer Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 description 10
- 230000008878 coupling Effects 0.000 description 7
- 238000010168 coupling process Methods 0.000 description 7
- 238000005859 coupling reaction Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 2
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
The active array LCD consists of several rows of gate lines and several columns of data lines crossing on one glass substrate, and one pixel region is formed in the area comprising any two adjacent gate lines and any two adjacent data lines. Inside each pixel region, there are one or several thin film transistors with gate in the first metal layer and connected to one gate line, source and drain in the second metal layer; one pixel electrode connected to the source in the second metal layer; one storage capacitor with the first electrode in the first metal layer and corresponding to the edge of the pixel electrode and forming one opened loop with one notch; and one metal pattern in the second metal layer in the position corresponding to the notch of the first electrode of the storage capacitor.
Description
Technical field
The present invention relates to a kind of LCD, particularly a kind of active matrix LCD.
Background technology
Seeing also shown in Figure 1ly, is the equivalent circuit diagram of traditional active matrix LCD.From equivalent circuit diagram as can be known, LCD 1 is to be intermeshed by multirow gate line Ni and multi-column data line Mi, and form a matrix with a plurality of pixel regions 10, wherein each pixel region 10 is formed between two adjacent gate lines and the two adjacent data lines, and its inside has a pixel electrode 11, a thin film transistor (TFT) 12 and an auxiliary capacitor Cs.Wherein thin film transistor (TFT) 12 is the switching devices as control pixel electrode 11, by of the orientation of the voltage of controlling pixel electrode 11 with change liquid crystal molecule (not shown), and then determine the light and shade of this pixel region 10, auxiliary capacitor Cs then is a store charge when thin film transistor (TFT) 12 is opened, and when thin film transistor (TFT) 12 cuts out, discharge electric charge to pixel electrode 11, glimmer with the picture of avoiding LCD 1.
See also shown in Figure 2, it is pixel region 10 planimetric maps of traditional active matrix LCD 1, pixel region 10 is arranged in the zone that two parallel gate line N and two parallel data line M are surrounded among the figure, be provided with a thin film transistor (TFT) 12 in the corner of pixel region 10, it comprises a grid 121, one source pole 122 and a drain electrode 123, wherein grid 121 is connected with gate line N, draining 123 is connected with data line M, then is provided with passage (channel) the stream circulation of can powering between source electrode 122 and drain electrode 123.Pixel electrode 11 is the nesa coatings (Indium Tin OxideConductive Thin Film) that are made of indium tin oxide, it is arranged on the pixel region 10 beyond the thin film transistor (TFT) 12, and wherein pixel electrode 11 is connected with the source electrode 122 of thin film transistor (TFT) 12.Auxiliary capacitor Cs then has one first electrode 13, and wherein this first electrode 13 is made of lighttight metal, for example aluminium, chromium, molybdenum, tantalum, and be connected to each other with gate line N.
What specify is, directly over each pixel region 10, be equipped with a light shield layer (not shown), this light shield layer (Black Matrix) is a middle frame type structure that is provided with opening, its housing is the shielded area, therefore the periphery of pixel electrode 11 and the housing corresponding section of light shield layer are invalid luminous zones, and the opening corresponding section in the middle of the centre of pixel electrode 11 and the light shield layer is the luminous zone, the aperture opening ratio of the size of luminous zone and pixel electrode 11 (Aperture ratio) has confidential relation, and can have influence on the picture quality of LCD.
Yet the active matrix LCD of known techniques has many shortcomings:
A. the structural design of known techniques can't be repaired when fracture takes place gate line.Because thin film transistor (TFT) is in the process of making; gate line breaks because of the influence (for example particulate adheres to) of external environment through regular meeting; to make the thin film transistor (TFT) that is connected with this gate line to play a role if can't repair, and have influence on the quality of LCD.
B. the auxiliary capacitor value of the structural design of known techniques is difficult to improve.Because the auxiliary capacitor value is directly proportional with area, therefore, first electrode area of auxiliary capacitor is big more, the effect of Charge Storage is also just good more, but,, relatively also can have influence on the pixel electrode opening rate if increase the area of first electrode because first electrode is lighttight metal level.
C. the structural design of known techniques can't be eliminated the coupling capacitance between pixel electrode and the data line.Owing to have potential difference (PD) between pixel electrode and the data line; therefore between pixel electrode and data line, have the generation of coupling capacitance; again; in order to improve the pixel electrode opening rate; distance between pixel electrode and the data line can be done nearer and nearer usually, relatively, and the coupling capacitance that is produced also just more and more higher (because capacitance is inversely proportional to distance); its result will cause the voltage of pixel electrode inhomogeneous, and then have influence on the picture quality of LCD.
Therefore, for the research staff who is engaged in active matrix LCD association area, there's no one who doesn't or isn't be devoted to solve the shortcoming of known techniques, in the hope of improving the quality of product.
Summary of the invention
The object of the present invention is to provide a kind of active matrix LCD, it can be repaired when broken string takes place gate line, to improve the qualification rate of LCD.
Another object of the present invention is to provide a kind of active matrix LCD, it can improve auxiliary capacitor under the situation that does not influence the pixel electrode opening rate, makes the picture quality of LCD better.
Another purpose of the present invention is to provide a kind of active matrix LCD, and it can provide capture-effect (shielding effect) avoiding producing coupling capacitance between pixel electrode and data line, and then improves the picture quality of LCD.
The technical scheme that realizes above-mentioned purpose of the present invention is as follows.
A kind of active matrix LCD comprises: glass substrate; Multirow gate line and multi-column data line intermesh and are formed on this glass substrate, and define a matrix that comprises a plurality of pixel regions, and wherein each pixel region is formed between above-mentioned two adjacent gate lines and the above-mentioned two adjacent data lines; Be equipped with a thin film transistor (TFT) in each pixel region, this thin film transistor (TFT) comprises a grid, one source pole and a drain electrode; Be equipped with a pixel electrode and an auxiliary capacitor in each pixel region, this auxiliary capacitor has one first electrode and is connected to each other with this gate line; It is characterized in that:
On glass substrate, be provided with the first metal layer and second metal level;
This grid is located at the first metal layer and is connected with this gate line, and this source electrode then is located at second metal level with this drain electrode and this drain electrode is connected with this data line;
The source electrode of this pixel electrode and this second metal level is connected to each other;
First electrode of this auxiliary capacitor be located at this first metal layer and with the periphery of this pixel electrode in correspondence with each other, wherein this first electrode is one to have the open loop of breach; And
A plurality of metal patterns wherein are equipped with a metal pattern in each pixel region, this metal pattern is located at this second metal level, and the breach of first electrode of its position and this auxiliary capacitor in correspondence with each other.
Described active matrix LCD is characterized in that: have one first insulation course between above-mentioned the first metal layer and above-mentioned second metal level.
Described active matrix LCD is characterized in that: then form an amorphous silicon passage above first insulation course of grid, two sides of this amorphous silicon passage form a doping semiconductor layer respectively.
Described active matrix LCD is characterized in that: this drain electrode and this source electrode are formed at two sides of this amorphous silicon passage and the top of doping semiconductor layer respectively.
Described active matrix LCD is characterized in that: this source/drain surface is to cover layer protective layer, is to utilize a conductive plugs to be connected to each other between this drain electrode and this pixel electrode.
Described active matrix LCD is characterized in that: the shape of this metal pattern is greater than the breach of first electrode.
Described active matrix LCD is characterized in that: first electrode of two ends of this metal pattern and this breach two ends carries out laser bonding, makes this metal pattern and this first electrode form conducting.
The present invention also provides a kind of method of making above-mentioned active matrix LCD
A kind of method of making the active matrix LCD, its step comprises:
One glass substrate is provided;
Form the first metal layer on this glass substrate, and produce the grid and first electrode at this first metal layer, wherein this first electrode has a breach;
At this first metal layer surface coverage one first insulation course;
Above first insulation course of this grid, form an amorphous silicon passage and form a doping semiconductor layer respectively in two sides of this amorphous silicon passage;
Above this doping semiconductor layer and first insulation course, be formed with second metal level, and produce drain electrode, source electrode, metal pattern at this second metal level, wherein this drain electrode and this source electrode are located at two sides of this amorphous silicon passage and the top of this doping semiconductor layer respectively, and this metal pattern then is to be located at the top of this first insulation course and corresponding with the breach of this first electrode;
Surface coverage at this second metal level has layer protective layer, and wherein this protective seam is provided with a conductive plugs above source electrode;
Pixel electrode is formed at the surface of this protective seam and is connected to each other by this conductive plugs and this source electrode.
The invention has the advantages that:
When fracture takes place at the gate line of active matrix LCD in the present invention, as long as find out the pixel region at gate line fracture place, and two ends of the metal pattern of this pixel region are carried out laser bonding, first electrode conduction with metal pattern and auxiliary capacitor, make gate line two ends of fracture originally, via being connected of first electrode of metal pattern and auxiliary capacitor, form conducting once again.
In addition, because first electrode of auxiliary capacitor of the present invention is arranged at around the pixel electrode, this position is the zone of covering for light shield layer, is to belong to invalid luminous zone, therefore can not influence the pixel electrode opening rate, and can increase auxiliary capacitor.
Again, because first electrode of auxiliary capacitor of the present invention is arranged at around the pixel electrode, and first electrode and gate line are connected to each other, therefore the current potential of first electrode will be kept fixing, and between pixel electrode and data line, form capture-effect, avoiding producing coupling capacitance between pixel electrode and the data line, and then improve the picture quality of LCD.
Have the knack of correlation technique person and can understand purpose of the present invention, feature and effect really for making, enumerate now that specific embodiment and conjunction with figs. describe in detail as after.
Description of drawings
Fig. 1 is the equivalent circuit diagram of the active matrix LCD of known techniques.
Fig. 2 is the pixel region planimetric map of the active matrix LCD of known techniques.
Fig. 3 is the pixel region planimetric map of active matrix LCD of the present invention.
Fig. 4 is the synoptic diagram that utilizes active matrix LCD of the present invention that the gate line of fracture is repaired.
Fig. 5 is the A-A ' sectional view of Fig. 3 of the present invention.
Fig. 6 is the B-B ' sectional view of Fig. 3 of the present invention.
Embodiment
See also shown in Figure 3, it is pixel region 30 planimetric maps of active matrix LCD of the present invention, LCD comprises a glass substrate, its surface is provided with the gate line N of multirow and the data line M of multiple row, wherein in above-mentioned gate line N that intermeshes and data line M, form a matrix that comprises a plurality of pixel regions 30 (pixel region), pixel region 30 is arranged between two adjacent gate lines N and the two adjacent data line M, and each pixel region 30 inside is equipped with a thin film transistor (TFT) 31, one pixel electrode 32, an one auxiliary capacitor Cs and a metal pattern 34.
Thin film transistor (TFT) 31 comprises a grid 311, one source pole 312 and a drain electrode 313, wherein grid 311 is located at the first metal layer and is connected to each other with gate line N, source electrode 312 is located at second metal level with 313 of drain electrodes, wherein drains 313 to be connected to each other source electrode 312 with data line M and then to be connected to each other with pixel electrode.Auxiliary capacitor Cs then has one first electrode 33, and this first electrode 33 is located at the first metal layer and is connected to each other with gate line N, the periphery of its position and pixel electrode 32 in correspondence with each other, wherein first electrode 33 is one to have the open loop of breach 331.Metal pattern 34 is located at second metal level, the breach 331 of its position and first electrode 33 in correspondence with each other, wherein the shape of metal pattern 34 is greater than the breach 331 of first electrode 33.
See also shown in Figure 4, it is the synoptic diagram that utilizes active matrix LCD of the present invention that the gate line of fracture is repaired, in manufacture process, gate line N may form because fracture takes place and open circuit, and makes the electric current of gate line N can't flow to next pixel region 30a.At this moment, as long as detect the pixel region 30 that the fracture place takes place gate line N, and two ends (P1, P2) of the metal pattern 34 of this pixel region 30 are carried out laser bonding, make metal pattern 34 and first electrode 33 of auxiliary capacitor Cs form conducting, can make two ends of the gate line N of fracture originally because metal pattern 34 with form electric current (I) conducting being connected of first electrode 33 once again.
In addition, because first electrode 33 of auxiliary capacitor Cs of the present invention is arranged at around the pixel electrode 32, its position just is the zone that light shield layer covered, belong to invalid luminous zone, therefore, first electrode 33 is arranged on the aperture opening ratio that this place can't influence pixel electrode 32, therefore, the present invention not only can increase the area of first electrode 33, more can improve the value of auxiliary capacitor Cs.
Again, because first electrode 33 of auxiliary capacitor Cs of the present invention is arranged at around the pixel electrode 32, and first electrode 33 is to be connected to each other with gate line N, therefore the potential value of first electrode 33 is fixed, it can form capture-effect (shielding effect) between pixel electrode 32 and data line M, produce coupling capacitance to avoid pixel electrode 32 to be subjected to the influence of data line M, and then improve the picture quality of LCD.
See also shown in Figure 5; it is that the present invention is at the A-A ' of Fig. 3 sectional view; be as ground among the figure with glass substrate 50; two sides at the first metal layer on glass substrate 50 surfaces are respectively equipped with one first electrode 33; then be coated with one first insulation course 51 on the surface of first electrode 33; in addition; above first insulation course 51, then be formed with one second metal level; wherein second metal level is to comprise that two data line M are located at top two sides of first insulation course 51 respectively; again; be to form a protective seam 52 above second metal level; the top zone line of this protective seam 52 then is formed with a pixel electrode 32, wherein pixel electrode 32 around be top corresponding to first electrode 33.By among the figure as can be known, when the potential value of first electrode 33 fixedly the time, the capture-effect that it produced can be avoided producing coupling capacitance between pixel electrode 32 and the data line M really, and then makes the picture of LCD keep stable.
See also shown in Figure 6, it is that the present invention is at the B-B ' of Fig. 3 sectional view, the first metal layer on glass substrate 50 surfaces among the figure is formed with a grid 311 and one first electrode 33 respectively, wherein first electrode 33 is divided into two sections, form a breach 331 in the middle of it, then be coated with one first insulation course 51 on the surface of the grid 311 and first electrode 33, above first insulation course 51 of grid 311, then form an amorphous silicon passage 53 (amorphous silicon channel), then form a doping semiconductor layer 54 (doped semiconductor layer) respectively in two sides of this amorphous silicon passage 53.
Above the doping semiconductor layer 54 and first insulation course 51, be formed with one second metal level; this second metal level comprises a drain electrode 313; one source pole 312; one metal pattern 34 and two data line M; wherein drain 313 with source electrode 312 be formed at two sides of amorphous silicon passage 53 and the top of doping semiconductor layer 54 respectively; 34 of metal patterns are the breach 331 that is formed at the top of first insulation course 51 and corresponds to first electrode 33; data line M then is top two sides of being located at first insulation course 51; the surface coverage of second metal level has a protective seam 52; wherein this protective seam 52 is provided with a conductive plugs 55 above source electrode 312, and pixel electrode 32 is formed at the surface of this protective seam 52 and is connected to each other by conductive plugs 55 and source electrode 312.
Certainly; the above only is the preferred embodiment of active matrix LCD of the present invention; it is not in order to limit practical range of the present invention; anyly have the knack of this skill person and all should belong to scope of the present invention, so protection scope of the present invention is when being foundation with the claim scope in the modification of making without prejudice to spirit of the present invention.
Claims (8)
1, a kind of active matrix LCD comprises: glass substrate; Multirow gate line and multi-column data line intermesh and are formed on this glass substrate, and define a matrix that comprises a plurality of pixel regions, and wherein each pixel region is formed between above-mentioned two adjacent gate lines and the above-mentioned two adjacent data lines; Be equipped with a thin film transistor (TFT) in each pixel region, this thin film transistor (TFT) comprises a grid, one source pole and a drain electrode; Be equipped with a pixel electrode and an auxiliary capacitor in each pixel region, this auxiliary capacitor has one first electrode and is connected to each other with this gate line; It is characterized in that:
On glass substrate, be provided with the first metal layer and second metal level;
This grid is located at the first metal layer and is connected with this gate line, and this source electrode then is located at second metal level with this drain electrode and this drain electrode is connected with this data line;
The source electrode of this pixel electrode and this second metal level is connected to each other;
First electrode of this auxiliary capacitor be located at this first metal layer and with the periphery of this pixel electrode in correspondence with each other, wherein this first electrode is one to have the open loop of breach; And
A plurality of metal patterns wherein are equipped with a metal pattern in each pixel region, this metal pattern is located at this second metal level, and the breach of first electrode of its position and this auxiliary capacitor in correspondence with each other.
2, active matrix LCD according to claim 1 is characterized in that: have one first insulation course between above-mentioned the first metal layer and above-mentioned second metal level.
3, active matrix LCD according to claim 1 is characterized in that: then form an amorphous silicon passage above first insulation course of grid, two sides of this amorphous silicon passage form a doping semiconductor layer respectively.
4, active matrix LCD according to claim 3 is characterized in that: this drain electrode and this source electrode are formed at two sides of this amorphous silicon passage and the top of doping semiconductor layer respectively.
5, active matrix LCD according to claim 1 is characterized in that: this source/drain surface is to cover layer protective layer, is to utilize a conductive plugs to be connected to each other between this drain electrode and this pixel electrode.
6, active matrix LCD according to claim 1, it is characterized in that: the shape of this metal pattern is greater than the breach of first electrode.
7, active matrix LCD according to claim 1 is characterized in that: first electrode of two ends of this metal pattern and this breach two ends carries out laser bonding, makes this metal pattern and this first electrode form conducting.
8, a kind of method of making the active matrix LCD, its step comprises:
One glass substrate is provided;
Form the first metal layer on this glass substrate, and produce the grid and first electrode at this first metal layer, wherein this first electrode has a breach;
At this first metal layer surface coverage one first insulation course;
Above first insulation course of this grid, form an amorphous silicon passage and form a doping semiconductor layer respectively in two sides of this amorphous silicon passage;
Above this doping semiconductor layer and first insulation course, be formed with second metal level, and produce drain electrode, source electrode, metal pattern at this second metal level, wherein this drain electrode and this source electrode are located at two sides of this amorphous silicon passage and the top of this doping semiconductor layer respectively, and this metal pattern then is to be located at the top of this first insulation course and corresponding with the breach of this first electrode;
Surface coverage at this second metal level has layer protective layer, and wherein this protective seam is provided with a conductive plugs above source electrode;
Pixel electrode is formed at the surface of this protective seam and is connected to each other by this conductive plugs and this source electrode.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100031171A CN100495182C (en) | 2004-02-04 | 2004-02-04 | Active type array liquid crystal display and its manufacture method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100031171A CN100495182C (en) | 2004-02-04 | 2004-02-04 | Active type array liquid crystal display and its manufacture method |
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| CN1558285A true CN1558285A (en) | 2004-12-29 |
| CN100495182C CN100495182C (en) | 2009-06-03 |
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| CNB2004100031171A Expired - Fee Related CN100495182C (en) | 2004-02-04 | 2004-02-04 | Active type array liquid crystal display and its manufacture method |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100454561C (en) * | 2007-08-07 | 2009-01-21 | 上海广电光电子有限公司 | Film transistor array substrates and its producing method, repairing method |
| CN101650497B (en) * | 2008-08-15 | 2011-03-23 | 胜华科技股份有限公司 | Liquid crystal display panel |
| CN102364390A (en) * | 2011-10-19 | 2012-02-29 | 深圳市华星光电技术有限公司 | Liquid crystal display (LCD) panel and method for forming same |
| CN102681268A (en) * | 2012-05-04 | 2012-09-19 | 深圳市华星光电技术有限公司 | Pixel structure and corresponding liquid crystal display device |
| CN106249495A (en) * | 2016-08-25 | 2016-12-21 | 厦门天马微电子有限公司 | Display floater and array base palte thereof |
| CN109493804A (en) * | 2018-11-27 | 2019-03-19 | 上海天马有机发光显示技术有限公司 | A kind of pixel circuit, display panel and display device |
| CN112563290A (en) * | 2020-12-02 | 2021-03-26 | 深圳市华星光电半导体显示技术有限公司 | Pixel structure, preparation method thereof and display device |
-
2004
- 2004-02-04 CN CNB2004100031171A patent/CN100495182C/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100454561C (en) * | 2007-08-07 | 2009-01-21 | 上海广电光电子有限公司 | Film transistor array substrates and its producing method, repairing method |
| CN101650497B (en) * | 2008-08-15 | 2011-03-23 | 胜华科技股份有限公司 | Liquid crystal display panel |
| CN102364390A (en) * | 2011-10-19 | 2012-02-29 | 深圳市华星光电技术有限公司 | Liquid crystal display (LCD) panel and method for forming same |
| CN102681268A (en) * | 2012-05-04 | 2012-09-19 | 深圳市华星光电技术有限公司 | Pixel structure and corresponding liquid crystal display device |
| WO2013163821A1 (en) * | 2012-05-04 | 2013-11-07 | 深圳市华星光电技术有限公司 | Pixel structure and corresponding liquid crystal display device |
| CN106249495A (en) * | 2016-08-25 | 2016-12-21 | 厦门天马微电子有限公司 | Display floater and array base palte thereof |
| CN109493804A (en) * | 2018-11-27 | 2019-03-19 | 上海天马有机发光显示技术有限公司 | A kind of pixel circuit, display panel and display device |
| CN112563290A (en) * | 2020-12-02 | 2021-03-26 | 深圳市华星光电半导体显示技术有限公司 | Pixel structure, preparation method thereof and display device |
| US20220399424A1 (en) * | 2020-12-02 | 2022-12-15 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Pixel structure, manufacturing method thereof, and display device |
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| Publication number | Publication date |
|---|---|
| CN100495182C (en) | 2009-06-03 |
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