CN1299324C - A method for repairing thin film transistor circuit on display panel - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000010409 thin film Substances 0.000 title abstract description 66
- 229910052751 metal Inorganic materials 0.000 claims abstract description 78
- 239000002184 metal Substances 0.000 claims abstract description 78
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 20
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 11
- 229910052721 tungsten Inorganic materials 0.000 claims description 11
- 239000010937 tungsten Substances 0.000 claims description 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 229910052804 chromium Inorganic materials 0.000 claims description 8
- 239000011651 chromium Substances 0.000 claims description 8
- 229910052750 molybdenum Inorganic materials 0.000 claims description 8
- 239000011733 molybdenum Substances 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- 229910052715 tantalum Inorganic materials 0.000 claims description 8
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 239000010936 titanium Substances 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims 5
- 239000012528 membrane Substances 0.000 claims 5
- 239000004411 aluminium Substances 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 239000010408 film Substances 0.000 abstract description 27
- 238000002294 plasma sputter deposition Methods 0.000 abstract description 9
- 238000003698 laser cutting Methods 0.000 abstract description 2
- 239000011521 glass Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 9
- 150000002736 metal compounds Chemical class 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000002923 metal particle Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000000608 laser ablation Methods 0.000 description 3
- 229910021645 metal ion Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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Abstract
Description
技术领域technical field
本发明是有关于一种修补显示器面板上薄膜电晶体线路图案的方法,特别是关于一种应用局部薄膜沉积技术对显示器面板上的薄膜电晶体(TFT)线路进行修补的方法。The invention relates to a method for repairing thin film transistor circuit patterns on a display panel, in particular to a method for repairing thin film transistor (TFT) circuits on a display panel by using a local thin film deposition technology.
发明背景Background of the invention
随着集成电路制作技术突飞猛进的脚步,电子科技持续的发展与进步,促使各式各样的电子产品皆朝着“数字化”发展。此外,为了符合轻便性与实用性的考量,在电子产品在设计上,都趋向以轻薄短小、功能多、处理速度快来作为设计规格,以便制作的产品能更容易携带,且更符合现代的生活需求。特别是在多媒体电子产品大行其道后,夹着其强大的运算能力,可轻易的处理各种音效、影像、图样等数字化资料,连带的使影像播放设备受到广泛的发展与运用。不论是个人数字处理器、笔记型电脑、随身听、数码相机、或行动电话等等,皆会装设显示萤幕以方便消费者浏览资讯或影像。With the rapid development of integrated circuit manufacturing technology and the continuous development and progress of electronic technology, all kinds of electronic products are moving towards "digitalization". In addition, in order to meet the considerations of portability and practicability, the design specifications of electronic products tend to be thin, short, multi-functional, and fast-processing, so that the products made can be carried more easily and are more in line with modern requirements. Daily needs. Especially after the popularity of multimedia electronic products, with its powerful computing power, it can easily process various digital data such as audio effects, images, and patterns, which in turn makes video playback equipment widely developed and used. Whether it is a personal digital processor, a notebook computer, a walkman, a digital camera, or a mobile phone, etc., a display screen is installed to facilitate consumers to browse information or images.
另一方面,由于薄膜电晶体制作技术快速的进步,使得诸如液晶显示器(LCD)、有机电激发光显示器(OLED)等平面显示器的性能持续提升,而可大量的应用于个人数字助理器(PDA)、笔记型电脑、数码相机、摄录影机、行动电话等各式电子产品中。再加上业界积极的投入研发以及采用大型化的生产设备,使平面显示器的品质不断提升,且价格持续下降,更使得其应用领域迅速扩大。On the other hand, due to the rapid progress of thin-film transistor manufacturing technology, the performance of flat-panel displays such as liquid crystal displays (LCDs) and organic electroluminescent displays (OLEDs) continues to improve, and can be widely used in personal digital assistants (PDAs). ), notebook computers, digital cameras, camcorders, mobile phones and other electronic products. Coupled with the industry's active investment in research and development and the adoption of large-scale production equipment, the quality of flat-panel displays has been continuously improved, and the price has continued to decline, which has also rapidly expanded its application fields.
一般而言,在显示器面板的制作过程中,往往会藉由膜层沉积与微影蚀刻等制程,在玻璃基板上制作大量的薄膜电晶体(TFT)、像素电极(pixelelectrode)、以及彼此纵横交错的扫描线与资料线图案,而构筑所需的像素阵列(pixel array)。并且,为了提供各个像素元件中薄膜电晶体所需的操作电压与讯号,在玻璃基板上并会制作相关的线路图案,由像素阵列向外延伸,以便与位于玻璃基板周围的晶片、元件产生连结。如此一来,制作于玻璃基板外缘的时序控制晶片(timing controller)与源极驱动晶片(source driverIC)16,便能透过面板上的线路图案,传送资料讯号至各个像素元件。并且,制作于玻璃基板侧边的闸极驱动晶片(gate driver IC),也可经由这些线路图案,将扫描讯号传送至各个像素元件。Generally speaking, in the manufacturing process of display panels, a large number of thin film transistors (TFTs), pixel electrodes (pixel electrodes), and criss-cross The scan line and data line pattern are used to construct the required pixel array (pixel array). Moreover, in order to provide the operating voltage and signals required by the thin film transistors in each pixel element, related circuit patterns will be made on the glass substrate, extending outward from the pixel array, so as to connect with the chips and elements around the glass substrate. . In this way, the timing controller chip (timing controller) and source driver IC (source driver IC) 16 fabricated on the outer edge of the glass substrate can transmit data signals to each pixel element through the circuit pattern on the panel. Moreover, the gate driver IC fabricated on the side of the glass substrate can also transmit scanning signals to each pixel element through these circuit patterns.
值得注意的是,在整个显示器面板的制程中,由于玻璃基板需要在不同的机台间往复传递以进行相关制程,因此在搬运的过程中经常会发生碰撞、摩擦,而导致玻璃基板上的线路被刮伤。特别是当线路受损过于严重时,便会造成断路,而无法有效的提供所需的电性连结功能。请参见图1A,此图显示出面板上的线路10,受到不当外力以至于产生刮断101的情形;至于在图1B中则显示出面板上的线路10由于其它不良因素(例如玻璃基板破损),所造成的玻璃贝壳状破裂102。It is worth noting that, in the entire display panel manufacturing process, since the glass substrate needs to be transferred back and forth between different machines for related manufacturing processes, collisions and frictions often occur during the handling process, resulting in wires on the glass substrate. Get scratched. Especially when the circuit is damaged too seriously, it will cause disconnection, and the required electrical connection function cannot be effectively provided. Please refer to FIG. 1A, which shows that the
以目前显示器面板的生产状况而言,在遭遇太过严重的线路刮伤时,往往会将该块玻璃基板直接报废。但如此一来,往往会使成本损失相当严重。为了有效的减少成本损失,本案乃提出一种修补线路的方法,以有效补救已断裂的薄膜电晶体线路,或是补救因为玻璃表面破裂而导致的线路断裂。In terms of the current production status of display panels, when encountering too severe line scratches, the glass substrate is often scrapped directly. But in this way, the cost loss is often quite serious. In order to effectively reduce the cost loss, this case proposes a method of repairing the circuit, which can effectively remedy the broken thin film transistor circuit, or remedy the circuit breakage caused by the cracked glass surface.
发明内容Contents of the invention
本发明的目的在提供一种修补显示器面板上薄膜电晶体线路断裂的方法。The object of the present invention is to provide a method for repairing the breakage of the thin film transistor circuit on the display panel.
一种修补显示器面板上薄膜电晶体线路的方法,至少包含下列步骤:A method for repairing thin film transistor circuits on a display panel at least includes the following steps:
将一遮罩置放于该显示面板上方,在该遮罩上具有一开口,正好对应于该显示面板上线路断裂的位置;且placing a mask over the display panel, with an opening on the mask corresponding to the position where the circuit breaks on the display panel; and
进行等离子体溅镀程序,以透过该遮罩的该开口,沉积一金属薄膜于该显示面板上,以便导通断裂的该线路。A plasma sputtering process is performed to deposit a metal thin film on the display panel through the opening of the mask so as to conduct the broken circuit.
所述的遮罩的该开口,能同时曝露出该显示面板上的复数条薄膜电晶体线路,并使该金属薄膜沉积于该些薄膜电晶体线路上。The opening of the mask can simultaneously expose a plurality of thin film transistor circuits on the display panel, and allow the metal thin film to be deposited on the thin film transistor circuits.
所述的修补显示器面板上薄膜电晶体线路的方法,在沉积该金属薄膜后,还包括进行一激光切除程序,以便将该复数条薄膜电晶体线路上的该金属薄膜切开,以防止不同的该薄膜电晶体线路间产生短路。The method for repairing the thin film transistor circuit on the display panel, after depositing the metal film, also includes performing a laser ablation procedure, so that the metal film on the plurality of thin film transistor circuits is cut to prevent different A short circuit occurs between the thin film transistor lines.
所述的薄膜电晶体线路是由依序沉积的第一金属层与第二金属层堆叠所形成,且该第一金属层与该第二金属层的材料可选择铬、钨、钽、钛、钼、铂、铝或其任意组合。The thin film transistor circuit is formed by stacking the first metal layer and the second metal layer deposited in sequence, and the materials of the first metal layer and the second metal layer can be selected from chromium, tungsten, tantalum, titanium, molybdenum , platinum, aluminum or any combination thereof.
所述的沉积于显示面板上的该金属薄膜是由铝金属所构成,且会填充于该第一金属层与该第二金属层的断裂缺口中。The metal thin film deposited on the display panel is made of aluminum, and will fill in the fracture gap between the first metal layer and the second metal layer.
一种修补显示器面板上薄膜电晶体线路的方法,是针对显示面板上薄膜电晶体线路进行修补,该方法至少包含下列步骤:A method for repairing the thin film transistor circuit on the display panel is to repair the thin film transistor circuit on the display panel, and the method at least includes the following steps:
沉积一局部金属薄膜于该显示面板上表面,以完全覆盖该显示面板上线路断裂的区域,该局部金属薄膜是覆盖于复数条线路之上;且Depositing a partial metal film on the upper surface of the display panel to completely cover the area where the lines on the display panel are broken, the partial metal film is covered on a plurality of lines; and
进行激光切除程序,将该复数条线路上的该局部金属薄膜切开,以防止不同该线路间产生短路。A laser ablation procedure is performed to cut the partial metal film on the plurality of lines, so as to prevent short circuits between different lines.
所述的修补显示器面板上薄膜电晶体线路的方法,其中所述每一条线路的材料可选择铬、钨、钽、钛、钼、铂、铝或其任意组合。In the method for repairing thin film transistor circuits on a display panel, the material of each circuit can be selected from chromium, tungsten, tantalum, titanium, molybdenum, platinum, aluminum or any combination thereof.
所述的每一条线路是由依序沉积的第一金属层与第二金属层堆叠所形成,且该第一金属层与该第二金属层的材料可选择铬、钨、钽、钛、钼、铂、铝或其任意组合。Each of the lines is formed by stacking the first metal layer and the second metal layer deposited in sequence, and the materials of the first metal layer and the second metal layer can be selected from chromium, tungsten, tantalum, titanium, molybdenum, Platinum, aluminum or any combination thereof.
所述的局部金属薄膜是由铝金属所构成,且会填充于该第一金属层与该第二金属层的断裂缺口中。The partial metal film is made of aluminum, and will fill in the fracture gap between the first metal layer and the second metal layer.
一种修补显示器面板上薄膜电晶体线路的方法,至少包含下列步骤:A method for repairing thin film transistor circuits on a display panel at least includes the following steps:
在该显示面板上方产生气态金属化合物;及gaseous metal compounds are generated above the display panel; and
使用激光光束照射,传输能量至该薄膜电晶体线路断裂位置上方,以解离该气态金属化合物并产生金属颗粒,使该些金属颗粒能沿着该薄膜电晶体线路的方向沉积,而覆盖并连结该条薄膜电晶体线路的断裂缺口。Irradiate with a laser beam to transmit energy above the broken position of the thin film transistor circuit to dissociate the gaseous metal compound and generate metal particles, so that the metal particles can be deposited along the direction of the thin film transistor circuit to cover and connect The fracture gap of the thin film transistor circuit.
所述的气态金属化合物是为W(CO)6。The gaseous metal compound is W(CO) 6 .
所述的薄膜电晶体线路是由依序沉积的第一金属层与第二金属层堆叠所形成,且该第一金属层与该第二金属层的材料可选择铬、钨、钽、钛、钼、铂、铝或其任意组合。The thin film transistor circuit is formed by stacking the first metal layer and the second metal layer deposited in sequence, and the materials of the first metal layer and the second metal layer can be selected from chromium, tungsten, tantalum, titanium, molybdenum , platinum, aluminum or any combination thereof.
所述的金属颗粒是由钨金属所构成,且是沉积填充于该第一金属层与该第二金属层的断裂缺口中。The metal particles are composed of tungsten metal, and are deposited and filled in the fracture gap between the first metal layer and the second metal layer.
相较于习知技术中直接将线路断裂的玻璃板报废的作法,本发明所提供线路修补方法将能有效的节省大量的制造成本。Compared with the practice of directly scrapping the broken glass plate in the prior art, the circuit repair method provided by the present invention can effectively save a lot of manufacturing costs.
附图说明Description of drawings
图1A-1B显示出发生于显示器面板上薄膜电晶体线路的破损情形;Figures 1A-1B show damage to thin film transistor circuits on a display panel;
图2A-2D显示出根据本发明第一实施例使用等离子体溅镀方式修补薄膜电晶体线路的步骤;2A-2D show the steps of using plasma sputtering to repair thin film transistor circuits according to the first embodiment of the present invention;
图3显示出本发明使用铝金属修补不同材料的金属层缺口的步骤;Fig. 3 shows that the present invention uses aluminum metal to repair the step of the metal layer breach of different materials;
图4A-4C显示出根据本发明第二实施例修补薄膜电晶体线路断裂缺口的步骤;及4A-4C show the steps of repairing the broken gap of the thin film transistor circuit according to the second embodiment of the present invention; and
图5A-5B显示出根据本发明第三实施例在不使用遮罩的情形下直接修补薄膜电晶体线路的步骤。5A-5B show the steps of directly repairing the thin film transistor circuit without using a mask according to the third embodiment of the present invention.
图号说明Description of figure number
线路10
刮断101 玻璃贝壳状破裂102Scratch off 101 glass conch breaking 102
显示器面板2
薄膜电晶体线路20 断裂缺口200Thin
第一金属层201 第二金属层202
遮罩22 开口220Mask 22 Opening 220
等离子体溅镀程序23 金属薄膜24Plasma sputtering process 23 Metal
金属离子25metal ion 25
显示器面板4
薄膜电晶体线路40 断裂区域400Thin
局部金属薄膜42Partial metal film 42
显示器面板5Display panel 5
薄膜电晶体线路50 断裂500Thin film transistor circuit 50 fracture 500
气态金属化合物52 激光54Gaseous Metal Compounds 52 Lasers 54
金属薄膜56Metal film 56
具体实施方式Detailed ways
本发明揭露一种修补显示器面板上薄膜电晶体线路的方法,是针对显示面板上薄膜电晶体线路进行修补。此修补方法主要包括下列步骤。首先,将一遮罩置放于显示面板上方,在遮罩上具有一开口,正好对应于显示面板上线路断裂的位置。接着,进行等离子体溅镀程序,以透过遮罩上的开口,沉积一金属薄膜于显示面板上,以导通断裂的线路。当金属薄膜是覆盖于复数条线路之上时,则进行激光切除程序,将复数条线路上的金属薄膜切开,以防止不同线路间产生短路。The invention discloses a method for repairing thin film transistor circuits on a display panel, which is aimed at repairing the thin film transistor circuits on the display panel. This repair method mainly includes the following steps. Firstly, a mask is placed above the display panel, and there is an opening on the mask corresponding to the position where the circuit breaks on the display panel. Then, a plasma sputtering process is performed to deposit a metal thin film on the display panel through the opening on the mask to conduct broken lines. When the metal film is covered on multiple circuits, a laser cutting process is performed to cut the metal film on the multiple circuits to prevent short circuits between different circuits.
第一实施例first embodiment
请参照图2A-2D,此部份的图式显示本发明所揭露用来修补线路图案的方法。如同上述,本发明主要是针对显示器面板上的薄膜电晶体线路断裂进行修补。图2A显示出位于显示器面板2上表面的薄膜电晶体线路20,由于受到刮伤而产生的断裂缺口200。在进行修补程序时,先将此块显示器面板2放置于一等离子体反应室之中,再置放一块遮罩22于显示器面板2上方,如图2B所示。要特别指出的是,在遮罩22上具有一开口220,正好对应于显示器面板2上线路的断裂缺口200。在较佳实施例中,开口220的宽度会稍微大于或等于薄膜电晶体线路20的线宽,至于开口220的长度则可视断裂缺口200沿伸情形而加以调整,一般来说,开口220的长度会稍微大于断裂缺口200的长度,以便透过开口沉积的金属材料,能有效的连接缺口200两端的线路图案。Please refer to FIGS. 2A-2D , which show the method for repairing circuit patterns disclosed in the present invention. As mentioned above, the present invention is mainly aimed at repairing the broken thin film transistor circuit on the display panel. FIG. 2A shows the
接着,如图2B所示,对显示器面板2进行等离子体溅镀程序(如箭头23),以透过遮罩22上的开口220,使被激发加速的金属离子25溅射于显示器面板2上,而沉积一金属薄膜24于断裂的薄膜电晶体线路20上,以便导通断裂的线路。请同时参照图2D,此图显示出由显示器面板2的截面所见的等离子体溅镀程序(箭头23)、掉落的金属离子25、以及沉积金属薄膜24的情形。在完成溅镀程序后,如图2C所示,在薄膜电晶体线路20的断裂缺口200上,会沉积一层金属薄膜24,用来产生所需的电性连结效果。Next, as shown in FIG. 2B , the
一般来说,薄膜电晶体线路20的材料可选择铬、钨、钽、钛、钼、铂、铝或其任意组合来构成,至于用来修补线路的金属薄膜24则是由铝金属所构成,以便藉由铝金属较佳的导电性,提供断裂的薄膜电晶体电路20较好的电性连结。换言之,不论显示器面板2上的薄膜电晶体线路20是由哪一种材料所构成,在进行本发明的修补程序时,皆可使用铝金属来沉积所需的金属薄膜24。此外,对于部份显示器面板2来说,请参照图3,其薄膜电晶体线路20是由依序沉积的第一金属层201与第二金属层202堆叠所形成,且第一金属层201与第二金属层202的材料并不相同。但在此种情形下,亦可应用上述的等离子体溅镀程序,直接沉积铝金属薄膜24于显示器面板2上,并填充至第一金属层201与第二金属层202的断裂缺口中,而达到线路修补的目的。Generally speaking, the material of the thin
第二实施例second embodiment
除了上述针对每一条薄膜电晶体线路进行修补的方式外,也可以针对一块区域中的所有线路断裂,透过进行一次金属薄膜的沉积程序,来进行修补线路的动作。请参照图4A,此图显示出位于显示器面板4上表面的薄膜电晶体线路40受到刮伤的情形。由于这些薄膜电晶体线路40排列的相当密集,因此在遭受外力破损时,其刮痕可能会横贯延伸好几条并列的薄膜电晶体线路40。以图4A中为例,破损的情形横贯三条毗邻的薄膜电晶体线路,而造成图中的断裂区域400。In addition to the above method of repairing each thin film transistor circuit, it is also possible to perform a metal thin film deposition process for all circuit breaks in a region to repair the circuit. Please refer to FIG. 4A , which shows a situation where the thin
在使用本发明的线路图案修补方法,请参照图4B,先沉积一局部金属薄膜42于显示器面板4上表面,以完全覆盖住显示器面板4上的断裂区域400。如图中所示,所沉积的局部金属薄膜42会同时覆盖住五条毗邻的薄膜电晶体线路40,因此尚需进行一道激光切除程序,除去位于线路图案间隙中的部份局部金属薄膜42,如图4C所示,以便将这些薄膜电晶体线路40上的局部金属薄膜42切开,使各条薄膜电晶体线路40间彼此隔开,防止不同线路间产生短路的问题。When using the circuit pattern repairing method of the present invention, referring to FIG. 4B , a partial metal thin film 42 is deposited on the upper surface of the
较佳实施例中,在进行上述局部金属薄膜42沉积时,可使用一遮罩来限定局部金属薄膜42的范围。亦即,在此遮罩上会具有一个对应于断裂区域400的开口图案,并且这个开口图案的尺寸会大于断裂区域400的尺寸,以便让所沉积的局部金属薄膜42能完全覆盖住整个断裂区域400。在将遮罩放置于显示器面板4上方后,可进行上述等离子体溅镀程序、或是采用化学气相沉积法来制作所需的局部金属薄膜42。要特别指出的是,在选择所需的遮罩时,只要所选遮罩上的开口图案大于整个断裂区域400即可。换言之,并不需要针对断裂区域400的大小,特别制作对应的遮罩。In a preferred embodiment, a mask can be used to limit the range of the local metal film 42 when the above partial metal film 42 is deposited. That is, there will be an opening pattern corresponding to the fractured
如同上述,薄膜电晶体线路40的材料可选择铬、钨、钽、钛、钼、铂、铝或其任意组合来构成,至于用来修补线路的局部金属薄膜42则是由铝金属构成。并且,对部份薄膜电晶体线路40而言,可能是由材料不同的第一金属层与第二金属层堆叠形成,即便如此,仍可直接沉积由铝材料构成的局部金属薄膜42,并填充至第一金属层与第二金属层的断裂缺口中,而达到线路修补的目的。As mentioned above, the material of the thin
第三实施例third embodiment
除了上述使用遮罩的方式外,当线路上的断裂相当微小时,亦可在不使用遮罩的情形下,直接对线路断裂位置进行金属薄膜的沉积。请参照图5A,当显示器面板5上的薄膜电晶体线路50发生断裂500时,可将显示器面板5放置于用来进行化学气相沉积程序的反应室中,并且通入诸如W(CO)6的气态金属化合物52,以便让显示器面板5上方的空间中,充满气态金属化合物,如图5B所示。接着,传输能量至薄膜电晶体线路50断裂位置500上方,以解离气态金属化合物并产生钨金属颗粒,使这些钨金属颗粒能沿着薄膜电晶体线路50的方向沉积而形成一金属薄膜56,以覆盖并连结薄膜电晶体线路50的断裂缺口500。In addition to the above-mentioned method of using a mask, when the break on the line is quite small, the metal thin film can be directly deposited on the broken position of the line without using a mask. Please refer to FIG. 5A, when the TFT circuit 50 on the display panel 5 is broken 500, the display panel 5 can be placed in the reaction chamber used to carry out the chemical vapor deposition process, and pass through such as W (CO) 6 The gaseous metal compound 52, so that the space above the display panel 5 is filled with the gaseous metal compound, as shown in FIG. 5B. Next, transmit energy to the top of the fractured position 500 of the thin film transistor circuit 50 to dissociate the gaseous metal compound and generate tungsten metal particles, so that these tungsten metal particles can be deposited along the direction of the thin film transistor circuit 50 to form a metal film 56, To cover and connect the break gap 500 of the thin film transistor circuit 50 .
在较佳实施例中,上述传输能量的步骤,能使用激光光束照射或是使用聚焦离子束(FIB;Focus Ion Beam)照射来达成。亦即,藉着使用激光光束或是聚焦离子束,沿着薄膜电晶体线路50的方向,扫过整段断裂缺口500,便能让解离的铝金属颗粒,掉落并附着于断裂缺口500中,而达成线路修补的功效。图5B显示出使用一激光54解离气态金属化合物52以形成所需金属薄膜56的情形。In a preferred embodiment, the above step of transmitting energy can be achieved by using laser beam irradiation or focusing ion beam (FIB; Focus Ion Beam) irradiation. That is, by using a laser beam or a focused ion beam to scan the entire fracture gap 500 along the direction of the TFT circuit 50, the dissociated aluminum metal particles can fall and attach to the fracture gap 500. In order to achieve the effect of line repair. FIG. 5B shows the situation where a laser 54 is used to dissociate the gaseous metal compound 52 to form the desired metal film 56 .
如同上述,薄膜电晶体线路50的材料可选择铬、钨、钽、钛、钼、铂、铝或其任意组合来构成,至于用来修补线路的局部金属薄膜56则是由铝金属构成。并且,对部份薄膜电晶体线路50而言,尽管其可能由材料不同的第一金属层与第二金属层堆叠形成,但仍然可以沉积由铝材料构成的金属薄膜56,填充于第一金属层与第二金属层的断裂缺口500中,而达到线路修补的目的。As mentioned above, the material of the thin film transistor circuit 50 can be composed of chromium, tungsten, tantalum, titanium, molybdenum, platinum, aluminum or any combination thereof, and the partial metal film 56 used to repair the circuit is composed of aluminum metal. Moreover, for part of the thin film transistor circuit 50, although it may be formed by stacking the first metal layer and the second metal layer of different materials, it is still possible to deposit a metal film 56 made of aluminum material to fill the first metal layer. layer and the fracture gap 500 of the second metal layer, so as to achieve the purpose of circuit repair.
相较于习知技术中直接将线路断裂的玻璃板报废的作法,本发明所提供线路修补方法将能有效的节省大量的制造成本。以每个月产出80万片的制造厂而言,在进行模组组装阶段时,由于薄膜电晶体线路断裂造成的不良率大约在0.3-0.4%左右。若每片显示器面板的价格以500元台币计算,则上述的修补方法显然可以立刻为制造厂省下约150万台币。Compared with the practice of directly scrapping the broken glass plate in the prior art, the circuit repair method provided by the present invention can effectively save a lot of manufacturing costs. For a manufacturing plant with an output of 800,000 pieces per month, the defect rate due to breakage of thin film transistor lines is about 0.3-0.4% during the module assembly stage. If the price of each display panel is calculated at NT$500, the above-mentioned repair method can obviously save about NT$1.5 million for the factory immediately.
本发明虽以较佳实例阐明如上,然其并非用以限定本发明精神与发明实体,仅止于上述实施例尔。是以,在不脱离本发明的精神与范围内所作的修改,均应包含在下述的申请专利范围内。Although the present invention is described above with preferred examples, it is not intended to limit the spirit and entity of the present invention, but only limited to the above examples. Therefore, any modifications made without departing from the spirit and scope of the present invention shall be included in the scope of the following patent applications.
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US5429994A (en) * | 1993-07-22 | 1995-07-04 | Mitsubishi Denki Kabushiki Kaisha | Wiring forming method, wiring restoring method and wiring pattern changing method |
US5518956A (en) * | 1993-09-02 | 1996-05-21 | General Electric Company | Method of isolating vertical shorts in an electronic array using laser ablation |
CN1142057A (en) * | 1995-05-30 | 1997-02-05 | 株式会社先进展示 | Array base plate, liquid-crystal displaying device of thin-film transistor, and method for production of said base plate |
CN1385827A (en) * | 2001-05-10 | 2002-12-18 | 达碁科技股份有限公司 | The repair method of the data line of the liquid crystal display |
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US5429994A (en) * | 1993-07-22 | 1995-07-04 | Mitsubishi Denki Kabushiki Kaisha | Wiring forming method, wiring restoring method and wiring pattern changing method |
US5518956A (en) * | 1993-09-02 | 1996-05-21 | General Electric Company | Method of isolating vertical shorts in an electronic array using laser ablation |
CN1142057A (en) * | 1995-05-30 | 1997-02-05 | 株式会社先进展示 | Array base plate, liquid-crystal displaying device of thin-film transistor, and method for production of said base plate |
CN1385827A (en) * | 2001-05-10 | 2002-12-18 | 达碁科技股份有限公司 | The repair method of the data line of the liquid crystal display |
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