CN113921680B - Mass transfer method - Google Patents
Mass transfer method Download PDFInfo
- Publication number
- CN113921680B CN113921680B CN202111160521.XA CN202111160521A CN113921680B CN 113921680 B CN113921680 B CN 113921680B CN 202111160521 A CN202111160521 A CN 202111160521A CN 113921680 B CN113921680 B CN 113921680B
- Authority
- CN
- China
- Prior art keywords
- substrate
- polymer film
- film layer
- layer
- azide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 117
- 229920006254 polymer film Polymers 0.000 claims abstract description 100
- 150000001540 azides Chemical class 0.000 claims abstract description 76
- 229920000642 polymer Polymers 0.000 claims abstract description 31
- 230000004888 barrier function Effects 0.000 claims description 34
- 238000007641 inkjet printing Methods 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 5
- 125000000664 diazo group Chemical group [N-]=[N+]=[*] 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- 239000005011 phenolic resin Substances 0.000 claims description 3
- 229920001568 phenolic resin Polymers 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 229920000767 polyaniline Polymers 0.000 claims description 3
- VTJUKNSKBAOEHE-UHFFFAOYSA-N calixarene Chemical compound COC(=O)COC1=C(CC=2C(=C(CC=3C(=C(C4)C=C(C=3)C(C)(C)C)OCC(=O)OC)C=C(C=2)C(C)(C)C)OCC(=O)OC)C=C(C(C)(C)C)C=C1CC1=C(OCC(=O)OC)C4=CC(C(C)(C)C)=C1 VTJUKNSKBAOEHE-UHFFFAOYSA-N 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 238000003756 stirring Methods 0.000 claims description 2
- KIXZZMBAMXKNER-UHFFFAOYSA-N C1=CC(O)=CC=C1C1=CC2=CC([N]3)=CC=C3C=C(C=C3)NC3=CC([N]3)=CC=C3C=C1N2 Chemical class C1=CC(O)=CC=C1C1=CC2=CC([N]3)=CC=C3C=C(C=C3)NC3=CC([N]3)=CC=C3C=C1N2 KIXZZMBAMXKNER-UHFFFAOYSA-N 0.000 claims 1
- 230000001678 irradiating effect Effects 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 abstract description 10
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 10
- 229920000867 polyelectrolyte Polymers 0.000 abstract description 8
- IVRMZWNICZWHMI-UHFFFAOYSA-N azide group Chemical group [N-]=[N+]=[N-] IVRMZWNICZWHMI-UHFFFAOYSA-N 0.000 abstract description 5
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 4
- 150000001450 anions Chemical class 0.000 abstract description 3
- 150000001768 cations Chemical class 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 17
- 235000012431 wafers Nutrition 0.000 description 13
- 239000010408 film Substances 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- 239000003086 colorant Substances 0.000 description 7
- 150000002829 nitrogen Chemical class 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000001338 self-assembly Methods 0.000 description 3
- FUGYGGDSWSUORM-UHFFFAOYSA-N 4-hydroxystyrene Chemical compound OC1=CC=C(C=C)C=C1 FUGYGGDSWSUORM-UHFFFAOYSA-N 0.000 description 2
- 229920001448 anionic polyelectrolyte Polymers 0.000 description 2
- 125000002091 cationic group Chemical group 0.000 description 2
- VFHDWGAEEDVVPD-UHFFFAOYSA-N chembl507897 Chemical compound C1=CC(O)=CC=C1C(C1=CC=C(N1)C(C=1C=CC(O)=CC=1)=C1C=CC(=N1)C(C=1C=CC(O)=CC=1)=C1C=CC(N1)=C1C=2C=CC(O)=CC=2)=C2N=C1C=C2 VFHDWGAEEDVVPD-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 125000000852 azido group Chemical group *N=[N+]=[N-] 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- -1 calixarene compound Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000007306 functionalization reaction Methods 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 230000009878 intermolecular interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H01L33/44—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H01L2933/0025—
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
The invention relates to a huge transfer method, which is not limited by the distance between LED chips on a substrate, and utilizes the strong hydrogen donating ability (anion polyelectrolyte) of hydroxyl groups in phenolic hydroxyl polymers and the electron donating ability (cation polyelectrolyte) of azide groups in azide polymers to make the phenolic hydroxyl polymers and the azide polymers mutually attracted, so that the LED chips with phenolic hydroxyl polymer film layers are self-assembled on the surfaces of the azide polymer film layers in a targeted manner, the phenolic hydroxyl polymer film layers and the azide polymer film layers form an assembled film layer based on hydrogen bonds, and then the phenolic hydroxyl polymers and the azide polymers are subjected to azide reaction to form covalent bonds through ultraviolet irradiation, so that the LED chips can be quickly and accurately transferred to corresponding pixels of the substrate, and the transfer efficiency and the transfer precision are improved.
Description
Technical Field
The invention relates to the technical field of display, in particular to a huge transfer method.
Background
The mass transfer of Micro LEDs (Micro light emitting diodes) requires precise grabbing of Micro-LED chips of Micro scale from a donor wafer, expanding array distance, and properly placing and fixing on a target substrate (such as a display back plate). With the current mainstream LED die bonding speed, it often takes tens of days to mount a television screen, and the industrialization requirement can not be met.
For the process of precisely peeling from a donor wafer, expanding the wafer array distance and transferring the wafer, the mainstream scheme currently includes:
1. laser lift-off and laser heat release techniques. The method is suitable for the requirement of a target substrate on the placing distance of the Micro-LED chips, and the laser selectively irradiates wafers on the Micro-LED chip transfer substrate at a certain distance, so that the wafers are peeled off/released and fall onto the target substrate, and the aim of enlarging the distance of the wafer array is fulfilled. According to the scheme, the distance expansion and transfer placement of a plurality of Micro-LED chips can be realized without moving the Micro-LED chip transfer substrate. However, the premise of implementing the scheme is that the distance between two adjacent wafers on the target substrate is required to be an integral multiple of the distance between two wafers on the Micro-LED chip transfer substrate, otherwise, a plurality of Micro-LED chips cannot be aligned at the same time;
2. stretching the elastic film enlarges the wafer array distance. The Micro-LED chip is transferred onto an elastic film, the elastic film is uniformly stretched by stretching the elastic film, and meanwhile, the distance between wafers on the elastic film is uniformly stretched and then transferred onto a target substrate. The scheme can realize the crystal expansion and transfer placement of a large number of wafers at the same time, but has higher requirement on uniformity and consistency of the elastic film, otherwise, the distance of the wafers after crystal expansion cannot be adapted to the requirement of a target substrate.
Disclosure of Invention
The invention aims to provide a mass transfer method for solving the problem that the existing mass transfer method is limited by the spacing between Micro-LED chips on a substrate.
Specifically, the technical scheme adopted by the invention is as follows:
a method of mass transfer comprising:
providing a substrate;
forming a plurality of LED chips on the surface of the substrate;
forming a phenolic hydroxyl polymer film layer on the surface of the LED chip;
separating a plurality of the LED chips from the substrate;
providing a substrate;
forming a barrier layer on the surface of the substrate;
forming a plurality of through holes exposing at least part of the surface of the substrate on the surface of the barrier layer;
forming an azide polymer film layer in at least part of the through holes;
transferring the LED chip to the substrate;
the LED chip is assembled with the azide polymer film layer through the phenolic hydroxyl polymer film layer;
and (3) the phenolic hydroxyl polymer film layer and the azide polymer film layer form covalent bonding through ultraviolet irradiation.
To achieve the above object, the present invention also provides another mass transfer method, comprising:
providing a substrate;
forming a plurality of LED chips on the surface of the substrate;
forming a phenolic hydroxyl polymer film layer on the surface of the LED chip;
separating a plurality of the LED chips from the substrate;
providing a substrate;
forming an azide polymer film layer on the surface of the substrate;
forming a barrier layer on the surface of the azide polymer film layer;
forming at least one through hole exposing at least part of the surface of the azide polymer film layer on the surface of the barrier layer;
transferring the LED chip to the substrate;
the LED chip is assembled with the azide polymer film layer exposed to the through hole through the phenolic hydroxyl polymer film layer;
and (3) the phenolic hydroxyl polymer film layer and the azide polymer film layer form covalent bonding through ultraviolet irradiation.
Optionally, the step of forming covalent bonds between the phenolic hydroxyl polymer film layer and the azide polymer film layer by ultraviolet irradiation further comprises stripping the barrier layer with a stripping solution.
Alternatively, the phenolic hydroxyl polymers forming the phenolic hydroxyl polymer film layer include, but are not limited to, polyaniline, phenolic resins, calixarene-based compounds, and 4-hydroxyphenyl porphyrin.
Optionally, the azide polymers forming the azide polymer film layer include, but are not limited to, diazo resins and derivatives thereof.
Optionally, the step of transferring the LED chip to the substrate further includes placing the substrate and the LED chip in water or a polar solution and stirring and mixing.
Optionally, the step of separating the plurality of LED chips from the substrate includes: a plurality of the LED chips are separated from the substrate by a laser lift-off technique.
Optionally, the azide polymer film layer is formed on the surface of the substrate by inkjet printing, the arrangement mode of the through holes corresponds to the arrangement mode of the pixel units on the substrate, the pixel colors of the pixel units corresponding to the through holes exposing the azide polymer film layer correspond to the colors of the LED chips, and the colors of the plurality of LED chips formed on the surface of the substrate are the same.
Optionally, the barrier layer is a photoresist layer, and the step of forming the through hole on the surface of the barrier layer includes: exposing, developing and baking the barrier layer to form the through hole.
Optionally, the step of forming a plurality of LED chips on the surface of the substrate further includes sequentially epitaxially growing a buffer layer, an unintentionally doped layer, and an LED epitaxial structure on the surface of the substrate, where the LED epitaxial structure includes sequentially epitaxially growing an N-type conductive layer, a light emitting layer, a P-type conductive layer, a transparent conductive layer, and a contact layer formed on the surface of the unintentionally doped layer, and the contact layer includes a P-metal layer formed on the transparent conductive layer and a contact electrode formed on the surface of the light emitting layer.
The huge transfer method provided by the invention is not limited by the distance between the LED chips on the substrate, and the strong hydrogen donating ability (anion polyelectrolyte) of the hydroxyl in the phenolic hydroxyl polymer and the electron donating ability (cation polyelectrolyte) of the azide group in the azide polymer are utilized to make the phenolic hydroxyl polymer and the azide polymer mutually attracted, so that the LED chip with the phenolic hydroxyl polymer film layer is self-assembled on the surface of the azide polymer film layer in a targeted manner, the phenolic hydroxyl polymer film layer and the azide polymer film layer form an assembled film layer based on hydrogen bonds, and then the phenolic hydroxyl polymer and the azide polymer are subjected to an azide reaction to form covalent bonds through ultraviolet irradiation, so that the LED chip can be quickly and accurately transferred to the corresponding pixel of the substrate, and the transfer efficiency and the transfer precision are improved.
Drawings
The technical solution and other advantageous effects of the present invention will be made apparent by the following detailed description of the specific embodiments of the present invention with reference to the accompanying drawings.
FIG. 1 is a flow chart of a macro-transfer method according to an exemplary embodiment of the present invention;
FIG. 2a is a schematic diagram of a substrate and an LED chip in a bulk transfer method according to an exemplary embodiment of the present invention;
FIG. 2b is a schematic diagram of a substrate and a single LED chip in a bulk transfer method according to an exemplary embodiment of the present invention;
FIG. 2c is a schematic diagram of a mass transfer method for forming a phenolic hydroxyl polymer film layer on the surfaces of a plurality of LED chips according to an exemplary embodiment of the present invention;
FIG. 2d is a schematic diagram of a bulk transfer method according to an exemplary embodiment of the present invention in which a plurality of LED chips are peeled from a substrate surface;
FIG. 2e is a schematic diagram illustrating a bulk transfer method for forming a barrier layer on a substrate surface according to an exemplary embodiment of the present invention;
FIG. 2f is a schematic diagram of a bulk transfer method for forming a via on a surface of a barrier layer according to an exemplary embodiment of the present invention;
FIG. 2g is a schematic diagram of a bulk transfer process for forming an azide polymer film layer in a via according to an exemplary embodiment of the present invention;
FIG. 2h is a schematic diagram of a transfer of a single color LED chip to a substrate in a bulk transfer method according to an exemplary embodiment of the present invention;
FIG. 2i is a schematic diagram of an ultraviolet irradiation structure in a bulk transfer method according to an exemplary embodiment of the present invention;
FIG. 3 is a schematic diagram showing a combined structure of an LED chip and a substrate in a bulk transfer method according to an exemplary embodiment of the present invention;
FIG. 4 is a block diagram of a macro-transfer method according to another exemplary embodiment of the present invention
FIG. 5a is a schematic diagram illustrating a method for bulk transfer to form an azide polymer film layer on a substrate surface according to another exemplary embodiment of the present invention;
FIG. 5b is a schematic diagram of a bulk transfer process for forming a barrier layer on a surface of an azide polymer film layer according to another exemplary embodiment of the present invention;
FIG. 5c is a schematic diagram of a bulk transfer method for forming a via on a surface of a barrier layer according to another exemplary embodiment of the present invention;
FIG. 5d is a schematic diagram of a transfer of a single color LED chip to a substrate in a bulk transfer method according to another exemplary embodiment of the present invention;
FIG. 5e is a schematic diagram of an ultraviolet irradiation structure in a bulk transfer method according to another exemplary embodiment of the present invention;
FIG. 6 is a schematic diagram of a structure of a substrate and an LED chip after peeling a barrier layer in a bulk transfer method according to another exemplary embodiment of the present invention;
the parts in the figure are numbered as follows:
100. a substrate;
200. the LED chip comprises an LED chip body, wherein the LED chip body comprises a LED chip 201, a buffer layer, a 202, an unintended doped layer, a 203, an LED epitaxial structure, a 204, an N-type conductive layer, a 205, a light-emitting layer, a 206, a P-type conductive layer, a 207, a transparent conductive layer, a 208, a contact layer, 2081, a P-electrode metal layer, 2082, a contact electrode, 210 and a phenolic hydroxyl polymer film layer;
300. 300', substrate, 310', barrier layer, 320 'via, 330' azide polymer film layer;
400. polar solution.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It will be apparent that the described embodiments are only some, but not all, embodiments of the invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The huge transfer method is not limited by the distance between the LED chips on the substrate, the strong hydrogen donating ability (anion polyelectrolyte) of the hydroxyl in the phenolic hydroxyl polymer and the electron donating ability (cation polyelectrolyte) of the azide group in the azide polymer are utilized, so that the phenolic hydroxyl polymer and the azide polymer are mutually attracted, the LED chips with the phenolic hydroxyl polymer film layer are self-assembled on the surface of the azide polymer film layer in a targeted manner, the phenolic hydroxyl polymer film layer and the azide polymer film layer form an assembly film layer based on hydrogen bonds, then the phenolic hydroxyl polymer and the azide polymer are subjected to an azide reaction to form covalent bonds through ultraviolet irradiation, and covalent bonds are formed, so that the LED chips can be quickly and accurately transferred to corresponding pixels of the substrate, and the transfer efficiency and the transfer precision are improved. As a typical application, the mass transfer method of the present invention may be applied to the manufacture of a display panel, and the manufactured display panel may be applied to a mobile terminal, where the mobile terminal includes a terminal body and a display panel, and the mobile terminal may be: any product or component with realistic functions such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator and the like.
Referring to fig. 1 and 2a to 2i, in one embodiment of the present invention, the mass transfer method includes the steps of:
s1, providing a substrate 100;
s2, forming a plurality of LED chips 200 on the surface of the substrate 100;
s3, forming a phenolic hydroxyl polymer film layer 210 on the surface of the LED chip 200;
s4, separating the LED chips 200 from the substrate 100;
s5, providing a substrate 300;
s6, forming a barrier layer 310 on the surface of the substrate 300;
s7, forming a plurality of through holes 320 exposing at least part of the surface of the substrate 300 on the surface of the barrier layer 310;
s8, forming an azide polymer film layer 330 in at least part of the through holes 320;
s9, transferring the LED chip 200 to the substrate 300;
s10, assembling the LED chip 200 with the azide polymer film layer 330 through the phenolic hydroxyl polymer film layer 210;
s11, ultraviolet irradiation enables the phenolic hydroxyl polymer film 210 layer and the azide polymer film layer 330 to form covalent bonding.
In this embodiment, referring to fig. 2b, step S2 of forming a plurality of LED chips 200 on the surface of the substrate 100 further includes sequentially epitaxially growing a buffer layer 201, an unintentionally doped layer 202, and an LED epitaxial structure 203 on the surface of the substrate 100, wherein the LED epitaxial structure includes sequentially epitaxially growing an N-type conductive layer 204, a light emitting layer 205, a P-type conductive layer 206, a transparent conductive layer 207, and a contact layer 208 formed on the surface of the unintentionally doped layer 202, and the contact layer 208 includes a P-electrode metal layer 2081 formed on the transparent conductive layer 207 and a contact electrode 2082 formed on the surface of the light emitting layer 205. The material of the unintentionally doped layer 202 is, for example, gaN, the material of the N-type conductive layer 204 is, for example, N-GaN, and the material of the P-type conductive layer 206 is, for example, P-GaN. Methods of epitaxial growth include, for example, processes such as metal chemical vapor deposition, laser assisted molecular beam epitaxy, laser sputtering, or hydride vapor phase epitaxy.
Step S3 is to form a phenolic hydroxyl polymer film layer 210 on the surface of the LED chip 200 by adopting the coating, thereby realizing the phenolic hydroxyl functionalization of the surface of the LED chip. The plurality of LED chips 200 in step S3 are the same in color, red (R), green (G) or blue (B), and in this embodiment, the LED chips are Micro-LED chips, the color is red (R), and the substrate 100 is a sapphire substrate.
Step S4 peels the plurality of LED chips 200 from the substrate 100 using a Laser Lift-off (LLO) technique.
In step S6, a layer of barrier layer 310 is coated on the surface of the substrate 300 by using a Coater (Coater), in this embodiment, the barrier layer 310 is a photoresist layer, and in step S7, a plurality of spaced-apart retaining walls 311 are formed on the surface of the barrier layer 310 by exposing, developing and baking, and the through holes 320 are formed between two adjacent retaining walls 311.
In step S8, an azide polymer film layer 330 is formed by spraying an azide polymer within the through-hole 320 by an inkjet printing (IJP) technique.
In steps S9 and S10, the substrate 300 with the retaining wall 311 and the azide polymer film layer 330 and the LED chips 200 coated with the phenolic hydroxyl polymer film layer 210 are mixed and stirred in water or the polar solution 400, and the LED chips coated with the phenolic hydroxyl polymer film layer 210 and the azide polymer film layer 330 sprayed in the through holes 320 are subjected to targeted self-assembly in water or the polar solution, so that the transfer of the LED chips into the pixel units on the surface of the substrate 300 is realized. Wherein the polar solution 400 is an electrolyte solution.
The principle of targeted self-assembly between the phenolic hydroxyl polymer film layer 210 and the azide polymer film layer 330 is as follows:
hydroxyl groups in the phenolic hydroxyl polymer have strong hydrogen donating ability (belonging to anionic polyelectrolyte), azide groups in the azide polymer have electron donating ability (belonging to cationic polyelectrolyte), the anionic polyelectrolyte attracts with the cationic polyelectrolyte (that is, the azide polymer film layer 330 attracts the phenolic hydroxyl polymer film layer 210 to form targeted guidance), the hydroxyl groups of the phenolic hydroxyl polymer film layer 210 combine with the azide groups of the azide polymer film layer 330 to form hydrogen bonds, the hydrogen bonds belong to weak intermolecular interactions, and the weak molecular forces generated by the formation of the hydrogen bonds of the phenolic hydroxyl polymer film layer 210 and the azide polymer film layer 330 combine with each other to realize self-assembly of the LED chip 200 on the substrate 300.
In step S11, the ultraviolet irradiation is used to make the phenolic hydroxyl polymer film 210 and the azide polymer film 330 undergo an azide reaction to form an N-N covalent bond, so as to realize covalent bonding, thereby ensuring the stability of assembling the LED chip 200 and the substrate 300.
In this embodiment, a plurality of LED chips 200 with the same color may be transferred to the corresponding pixel positions of the substrate 300, in this embodiment, a plurality of pixel units (not shown in the figure) arranged in an array are disposed on the substrate 300, the arrangement mode of the through holes 320 corresponds to the arrangement mode of the pixel units, one through hole 320 corresponds to one pixel unit, in step S7, the pixel colors of the pixel units corresponding to the through holes 320 formed on the surface of the barrier layer 310 are the same, for example, red (R), green (G) or blue (B), in this embodiment, the pixel colors are red (R), that is, the plurality of through holes 320 are only exposed on the surface of the substrate 300 corresponding to the red pixel, but not exposed on the surface of the substrate 300 corresponding to the blue pixel and the green pixel, and then the azide polymer film layer 330 is formed in the through holes 320 by using an inkjet printing (IJP) technique, so that the pixel colors of the pixel units corresponding to the pixel units of the substrate 300 are all red (R), and the pixel units corresponding to the blue pixel units corresponding to the pixel units are not formed in the through holes 330.
Then repeating steps S7 to S11 and referring to fig. 3, ink-jet printing the azide polymer film layer 330 in the through hole 320 corresponding to the pixel unit with green pixel color, transferring the green (G) LED chip 200 into the corresponding through hole 320, completing the transfer of the green (G) LED chip 200 to the substrate 300, and since the transfer of the red (R) LED chip 200 is completed in the through hole 320 corresponding to the pixel unit with red pixel color, the azide polymer film layer 330 is not formed in the through hole 320 corresponding to the pixel unit with blue pixel color, and the blue (B) LED chip 200 cannot be transferred to the substrate 300; and repeating the steps S7 to S11, and performing ink-jet printing on the azide polymer film layer 330 in the through hole 320 corresponding to the pixel unit with the blue pixel color, so as to transfer the blue (B) LED chip 200 into the corresponding through hole 320, thereby completing the transfer of the blue (B) LED chip 200 to the substrate 300.
In step S2, a plurality of LED chips 200 having the same color, for example, red (R) LED chips 200, may be formed on the surface of the substrate 100, and then steps S3 to S11 may be continued. And repeating the steps S1-S11 to finish the transfer of the green (G) LED chip 200 to the substrate 300 and finish the transfer of the blue (B) LED chip 200 to the substrate 300, thereby ensuring that the single-color LED chip 200 is transferred into the pixel unit with the corresponding color on the surface of the substrate 300.
In a preferred embodiment of the present invention, the mass transfer method, referring to fig. 4, 2a to 2d, and 5a to 5e, comprises the steps of:
sa, providing a substrate 100;
sb, forming a plurality of LED chips 200 on the surface of the substrate 100;
sc, forming a phenolic hydroxyl polymer film layer 210 on the surface of the LED chip 200;
sd, separating the plurality of LED chips 200 from the substrate 100;
se, providing a substrate 300';
sf, forming an azide polymer film layer 330 'on the surface of the substrate 300';
sg, forming a barrier layer 310 'on the surface of the azide polymer film layer 330';
sh, forming at least one via 320' exposing at least a portion of the surface of the azido polymer film layer 330' on the surface of the barrier layer 310';
si, transferring the LED chip 200 to the substrate 300';
sj, the LED chip 200 is assembled with the azide polymer film layer 330 'exposed to the through hole 320' through the phenolic hydroxyl polymer film layer 210;
sk, ultraviolet light, causes the phenolic hydroxyl polymer film layer 210 to form a covalent bond with the azide polymer film layer 330'.
In this preferred manner, a laminated nitrogen polymer film 330' is formed on the surface of the substrate 300', then a barrier layer 310' is formed on the laminated nitrogen polymer film 330', a plurality of retaining walls 311' are formed on the surface of the barrier layer 310' at intervals by exposure, development and baking, the through holes 320' are formed between two adjacent retaining walls 311', the through holes 320' correspond to pixel units on the surface of the substrate 300', the pixels in the pixel units corresponding to the through holes 320' are the same color, for example, red, the LED chips 200 are transferred to the substrate 300', the LED chips 200 are self-assembled in a targeted manner through the phenolic hydroxyl polymer film 210 and the exposed laminated nitrogen polymer film 330' exposed by the through holes 320', and the phenolic hydroxyl polymer and the laminated nitrogen polymer are subjected to an azide reaction to form covalent coupling through ultraviolet irradiation, so that the transfer of the red (R) LED chips 200 to the pixel units corresponding to the surface of the substrate 300' is completed.
Then repeating steps Se to Sk and referring to fig. 6, forming through holes 320' corresponding to the pixel units with green color on the surface of the barrier layer 310' to expose the corresponding azide polymer film layers 330', transferring the green (G) LED chip 200 into the corresponding through holes 320', and completing the transfer of the green (G) LED chip 200 to the substrate 300'; and repeating the steps Se to Sk, forming through holes 320 'corresponding to the pixel units with blue pixel colors on the surface of the barrier layer 310', and transferring the blue (B) LED chips 200 into the corresponding through holes 320', thereby completing the transfer of the blue (B) LED chips 200 to the substrate 300'.
In step Sb, a plurality of LED chips 200 having the same color, for example, red (R) LED chips 200 are formed on the surface of the substrate 100, and then steps S3 to S11 are continued. And repeating the steps S1-S11 to finish the transfer of the green (G) LED chip 200 to the substrate 300' and finish the transfer of the blue (B) LED chip 200 to the substrate 300', thereby ensuring that the single-color LED chip 200 is transferred into the pixel unit with the corresponding color on the surface of the substrate 300 '.
In this embodiment, the phenolic hydroxyl polymer forming the phenolic hydroxyl polymer film layer 210 includes, but is not limited to, polyaniline, phenolic resin, calixarene compound and 4-hydroxyphenyl porphyrin, and in this embodiment, the phenolic hydroxyl polymer is specifically selected from poly [ styrene-co-N- (4-hydroxyphenyl) maleimide ] (P (S-co-HPMI)) or poly (P-vinyl phenol) (PVPh). The azide polymers forming the azide polymer film layers 330, 330' include, but are not limited to, diazo resins and derivatives thereof, and in this embodiment, the azide polymers are specifically selected from the diazo resins. The azide polymer film layers 330, 330 'may be baked to form an ultra thin film on the surface of the substrate 300, 300'. The ultraviolet light irradiation has ultraviolet light wavelength less than or equal to 400nm and irradiation time length of 15min.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (10)
1. A method of mass transfer comprising:
providing a substrate;
forming a plurality of LED chips on the surface of the substrate;
forming a phenolic hydroxyl polymer film layer on the surface of the LED chip;
separating a plurality of the LED chips from the substrate;
providing a substrate;
forming a barrier layer on the surface of the substrate;
forming a plurality of through holes exposing at least part of the surface of the substrate on the surface of the barrier layer;
forming an azide polymer film layer in at least part of the through holes;
transferring the LED chip to the substrate;
the LED chip is assembled with the azide polymer film layer through the phenolic hydroxyl polymer film layer;
and (3) the phenolic hydroxyl polymer film layer and the azide polymer film layer form covalent bonding through ultraviolet irradiation.
2. A method of mass transfer comprising:
providing a substrate;
forming a plurality of LED chips on the surface of the substrate;
forming a phenolic hydroxyl polymer film layer on the surface of the LED chip;
separating a plurality of the LED chips from the substrate;
providing a substrate;
forming an azide polymer film layer on the surface of the substrate;
forming a barrier layer on the surface of the azide polymer film layer;
forming at least one through hole exposing at least part of the surface of the azide polymer film layer on the surface of the barrier layer;
transferring the LED chip to the substrate;
the LED chip is assembled with the azide polymer film layer exposed to the through hole through the phenolic hydroxyl polymer film layer;
and (3) the phenolic hydroxyl polymer film layer and the azide polymer film layer form covalent bonding through ultraviolet irradiation.
3. The bulk transfer method of claim 2, wherein the step of uv irradiating to covalently bond the phenolic hydroxyl polymer film layer to the azide polymer film layer further comprises stripping the barrier layer with a stripping solution.
4. The mass transfer method of claim 1 or 2, wherein the phenolic hydroxyl polymers forming the phenolic hydroxyl polymer film layer include, but are not limited to, polyaniline, phenolic resins, calixarene-based compounds, and 4-hydroxyphenyl porphyrins.
5. A mass transfer method as claimed in claim 1 or claim 2, wherein the azide polymers forming the azide polymer film layer include, but are not limited to, diazo resins and derivatives thereof.
6. The mass transfer method according to claim 1 or 2, wherein the step of transferring the LED chip to the substrate further comprises placing the substrate and the LED chip in water or a polar solution with stirring and mixing.
7. The mass transfer method of claim 1 or 2, wherein the step of separating the plurality of LED chips from the substrate comprises: a plurality of the LED chips are separated from the substrate by a laser lift-off technique.
8. The mass transfer method according to claim 1 or 2, wherein the azide polymer film layer is formed on the surface of the substrate by inkjet printing, the arrangement of the through holes corresponds to the arrangement of the pixel units on the substrate, the pixel color of the pixel units corresponding to the through holes exposing the azide polymer film layer corresponds to the color of the LED chip, and the color of the plurality of LED chips formed on the surface of the substrate is the same.
9. The bulk transfer method of claim 1 or 2, wherein the barrier layer is a photoresist layer, and the step of forming the via hole on the surface of the barrier layer comprises: exposing, developing and baking the barrier layer to form the through hole.
10. The mass transfer method of claim 1 or 2, wherein the step of forming a plurality of LED chips on the surface of the substrate further comprises sequentially epitaxially growing a buffer layer, an unintentionally doped layer, and an LED epitaxial structure on the surface of the substrate, the LED epitaxial structure comprising sequentially epitaxially growing an N-type conductive layer, a light emitting layer, a P-type conductive layer, a transparent conductive layer, and a contact layer comprising a P-metal layer formed on the transparent conductive layer and a contact electrode formed on the surface of the light emitting layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111160521.XA CN113921680B (en) | 2021-09-30 | 2021-09-30 | Mass transfer method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111160521.XA CN113921680B (en) | 2021-09-30 | 2021-09-30 | Mass transfer method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113921680A CN113921680A (en) | 2022-01-11 |
| CN113921680B true CN113921680B (en) | 2023-09-01 |
Family
ID=79237593
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111160521.XA Active CN113921680B (en) | 2021-09-30 | 2021-09-30 | Mass transfer method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113921680B (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060007776A (en) * | 2004-07-22 | 2006-01-26 | 삼성전자주식회사 | Mask pattern for manufacturing semiconductor device and method of forming the same and method of manufacturing semiconductor device having fine patterns |
| JP2006103178A (en) * | 2004-10-06 | 2006-04-20 | Hitachi Chem Co Ltd | Pattern forming method and manufacturing apparatus of electrolyte film for pattern formation used in the method |
| CN108461439A (en) * | 2018-04-20 | 2018-08-28 | 同辉电子科技股份有限公司 | A kind of preparation of Micro-LED chips and transfer method |
| CN110993636A (en) * | 2019-10-21 | 2020-04-10 | 佛山市国星半导体技术有限公司 | Method and system for transferring micro LED chips in large quantity |
| CN112435946A (en) * | 2020-11-16 | 2021-03-02 | 申广 | LED chip mass transfer method, transfer device and display screen manufacturing method |
| CA3172763A1 (en) * | 2020-02-19 | 2021-08-26 | Polymer Forge, Inc. | Microarrays |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6878470B2 (en) * | 2002-02-08 | 2005-04-12 | Fuji Photo Film Co., Ltd. | Visible image receiving material, conductive pattern material and organic electroluminescence element, using member having surface hydrophilicity |
| US8309954B2 (en) * | 2009-05-12 | 2012-11-13 | Toppan Printing Co., Ltd. | Insulating thin film, formation solution for insulating thin film, field-effect transistor, method for manufacturing the same and image display unit |
-
2021
- 2021-09-30 CN CN202111160521.XA patent/CN113921680B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20060007776A (en) * | 2004-07-22 | 2006-01-26 | 삼성전자주식회사 | Mask pattern for manufacturing semiconductor device and method of forming the same and method of manufacturing semiconductor device having fine patterns |
| JP2006103178A (en) * | 2004-10-06 | 2006-04-20 | Hitachi Chem Co Ltd | Pattern forming method and manufacturing apparatus of electrolyte film for pattern formation used in the method |
| CN108461439A (en) * | 2018-04-20 | 2018-08-28 | 同辉电子科技股份有限公司 | A kind of preparation of Micro-LED chips and transfer method |
| CN110993636A (en) * | 2019-10-21 | 2020-04-10 | 佛山市国星半导体技术有限公司 | Method and system for transferring micro LED chips in large quantity |
| CA3172763A1 (en) * | 2020-02-19 | 2021-08-26 | Polymer Forge, Inc. | Microarrays |
| CN112435946A (en) * | 2020-11-16 | 2021-03-02 | 申广 | LED chip mass transfer method, transfer device and display screen manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113921680A (en) | 2022-01-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US12094859B2 (en) | Display device and method for manufacturing the same | |
| CN109994579B (en) | Preparation method of micro LED display panel and micro LED display panel | |
| KR102087299B1 (en) | Film of quantum dot, method for patterning the same and quantum dot light emitting device using the same | |
| CN105977232B (en) | In a substrate the method for installing device, the board structure and electronic device of device are installed | |
| KR20180131496A (en) | Display device and method for forming the same | |
| US10903393B2 (en) | Transfer template, display substrate, display panel, and method for manufacturing the same | |
| TW587348B (en) | Multi substrate organic light emitting devices | |
| JP5493624B2 (en) | Image display device and electronic device | |
| Kim et al. | High-resolution colloidal quantum dot film photolithography via atomic layer deposition of ZnO | |
| US10333036B2 (en) | Absorptive color conversion film | |
| CN101859730A (en) | Light emitting semiconductor device, its assembly manufacture method and electronic equipment | |
| US8900892B2 (en) | Printing phosphor on LED wafer using dry film lithography | |
| US20140306244A1 (en) | Conductive phosphor layer electrode for vertical led | |
| TW202217783A (en) | Light emitting diode substrate and manufacturing method therefor, and display apparatus | |
| CN111095516B (en) | Mass transfer device and mass transfer method | |
| EP3410480B1 (en) | Display device | |
| CN109671734A (en) | Display panel and its manufacturing method | |
| Meitl et al. | 19‐4: Invited Paper: Emissive Displays with Transfer‐Printed Microscale Inorganic LEDs | |
| CN112952014B (en) | Light emitting diode and preparation method thereof, display panel and preparation method thereof | |
| CN113921680B (en) | Mass transfer method | |
| CN110689814B (en) | Multicolor micro LED array and manufacturing method thereof | |
| CN114667601A (en) | Pixelated light emitting diodes for self-aligned photoresist patterning | |
| CN111613699B (en) | Micro light-emitting diode and manufacturing method thereof | |
| CN114220828B (en) | Mass transfer method of Micro-LED chip and transfer carrier used for method | |
| CN114497112A (en) | MicroLED display panel manufacturing method and display panel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |