CN113900181B - Waveguide edge integrated coupler and preparation method thereof - Google Patents
Waveguide edge integrated coupler and preparation method thereof Download PDFInfo
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- CN113900181B CN113900181B CN202111105651.3A CN202111105651A CN113900181B CN 113900181 B CN113900181 B CN 113900181B CN 202111105651 A CN202111105651 A CN 202111105651A CN 113900181 B CN113900181 B CN 113900181B
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- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 238000010168 coupling process Methods 0.000 claims abstract description 55
- 230000008878 coupling Effects 0.000 claims abstract description 53
- 238000005859 coupling reaction Methods 0.000 claims abstract description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 51
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 51
- 239000010703 silicon Substances 0.000 claims abstract description 51
- 239000000835 fiber Substances 0.000 claims abstract description 29
- 238000013461 design Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 9
- 238000004088 simulation Methods 0.000 claims abstract description 8
- 238000006243 chemical reaction Methods 0.000 claims abstract description 4
- 238000004519 manufacturing process Methods 0.000 claims abstract description 4
- 238000012360 testing method Methods 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 15
- 239000013307 optical fiber Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 6
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- 238000004364 calculation method Methods 0.000 claims description 2
- 230000010287 polarization Effects 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 10
- 230000008901 benefit Effects 0.000 abstract description 4
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- 230000010354 integration Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000004422 calculation algorithm Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/122—Basic optical elements, e.g. light-guiding paths
- G02B6/124—Geodesic lenses or integrated gratings
- G02B6/1245—Geodesic lenses
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/126—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind using polarisation effects
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/14—Mode converters
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Abstract
The invention discloses a waveguide edge integrated coupler and a preparation method thereof. The coupler structure comprises a PIC device platform, an SOI waveguide structure and a silicon micro lens; the light is transmitted and emitted through the SOI waveguide structure on the PIC device platform, the silicon micro lens carries out mode spot conversion on the light beam, the light track is changed, the angle of the light entering the fiber core is limited, and then the light enters the single-mode fiber core after space propagation. The coupler preparation method comprises four steps, namely, firstly, designing and simulating an SOI structure to obtain the emergent mode characteristic of a waveguide; secondly, designing lens parameters; then, carrying out joint simulation on the coupler and the single-mode fiber to obtain theoretical coupling efficiency; and finally, manufacturing the coupling structure according to the design, optimizing through an actual active test result, and determining final parameters and a coupling scheme. Compared with discrete coupling, the coupler has the advantages that the integral structure can be integrated on an integrated optical circuit chip platform, the process is simple, and the packaging is convenient.
Description
Technical Field
The invention relates to the technical field of silicon photon integration, in particular to a coupler and a preparation method thereof.
Background
The development of high-speed optical communication has simultaneously driven the progress of silicon-based photonics, and communication devices are pursuing higher speed and larger bandwidth capacity, and also have the requirement of higher integration level. The semiconductor photon device, especially the silicon photon device, has wide prospect, wherein the light input and output in the semiconductor device is often completed by adopting a silicon waveguide structure, but the external transmission is often required to be coupled into an optical fiber to carry out long-distance transmission, so the realization of the efficient coupling of the silicon waveguide and the single-mode optical fiber is a key problem to be solved for improving the integration level of the device/system.
It is often seen that discrete lens structures are used in Photonic Integrated (PIC) devices for optical coupling of semiconductor devices and optical fibers, and the commonly used discrete lenses are lenses of silicon dioxide materials, which are difficult to integrate with silicon waveguides, and are large in size, and are usually coupled in the far field, resulting in a large optical path system, which is unfavorable for packaging, and high in non-arrayed coupling cost, and difficult to meet the benefit requirements of unit integration.
Disclosure of Invention
The invention aims to provide a waveguide edge integrated coupler for realizing effective coupling of a near-field optical path from a silicon waveguide to a single-mode fiber in a PIC device and a preparation method thereof, and aims to solve the problems of coupling loss caused by mismatching of the mode spot size of the waveguide/the fiber core and high refractive index difference in the near field by using a micro-size structure so as to realize effective coupling of the waveguide and the single-mode fiber.
The technical solution for realizing the purpose of the invention is as follows:
A waveguide edge integrated coupler comprising a PIC device platform, an SOI (silicon on insulator) waveguide structure, and a silicon microlens; the silicon micro lens and the SOI waveguide structure are integrated on a PIC device platform through the same substrate; the silicon micro lens is positioned at the edge of the light emitting end face of the SOI waveguide structure; the SOI waveguide structure can be used as the light output end of silicon-based waveguides with various structures in a PIC device platform, namely, the SOI waveguide structure can be used for transmitting light and can also be used only as the output end of the silicon-based waveguides. The specific coupling process of the coupler is as follows: the optical signal is transmitted and emitted from the PIC device platform through the SOI waveguide, the silicon micro lens performs a certain degree of mode spot conversion on the light beam, the light ray track is changed, the angle of the light ray entering the fiber core is limited, and then the light ray enters the fiber core after being transmitted in space.
Further, the SOI structure comprises a substrate layer, a buried oxide layer, a ridge waveguide outer ridge layer and a ridge waveguide inner ridge layer; the substrate layer, the buried oxide layer, the ridge waveguide outer ridge layer and the ridge waveguide inner ridge layer are sequentially stacked from bottom to top; the substrate layer is made of Si, the buried oxide layer is made of SiO 2, and the waveguide outer ridge layer and the ridge waveguide inner ridge layer are made of Si; there may be a cladding of other materials on top of the waveguide outer ridge layer, ridge waveguide inner ridge layer.
Furthermore, the SOI waveguide structure adopts a single-mode transmission mode; the thickness d of the ridge waveguide outer ridge layer and the thickness h of the ridge waveguide inner ridge layer meet the single-mode condition, namely d=gamma×h, and gamma is more than 0.5; the overall length of the SOI waveguide structure is greater than the stable single-mode length of the designed SOI structure; the stable single-mode length of the SOI structure refers to the length of the SOI waveguide structure when the light is transmitted through the SOI waveguide structure and the finally transmitted and coupled optical mode is a stable single-mode or a basic mode.
Further, the silicon microlens is located at the edge of the light emitting end face of the SOI waveguide structure, and is tightly bonded with the SOI waveguide structure, but is not limited to a bonding integrated mode, i.e. a short interval D 1 can exist between the waveguide and the rear end face of the microlens. The interval D 1 should be close to 0 μm to achieve close fitting of the silicon microlens and the waveguide structure, if the silicon microlens is not close to the waveguide, the end face of the waveguide should be located near the focal length of the lens object, at this time, the beam waist diameter of the incident beam is w 0, and the beam waist position and the lens distance are D in. The alignment form of the silicon microlens and the inner ridge layer of the ridge waveguide is center alignment, the surface is formed as a non-sphere, and the material is Si.
Furthermore, the end face of the silicon micro lens and the end face of the single-mode optical fiber are both subjected to anti-reflection treatment, so that the Fresnel reflection loss of the waveguide emergent light beam entering the fiber core through air is reduced, and the loss is not more than 1%.
Further, the near-field coupling distance between the end face of the silicon microlens and the end face of the single-mode optical fiber is not more than 100 μm, and the coupling distance D 2 satisfies the following conditions: a design margin of 0.ltoreq.D 2≤|dout±ZR |, where do ut is the distance between the image side beam waist position and the lens, Z R is the Rayleigh distance of the image Fang Gaosi beam, Z R＝πw0′2/4λ,w0' is the image side beam waist diameter size, and λ is the wavelength of light;
further, the coupling structure should be centered on the (x, y) cross-section of the core with no included angle for Z-incidence.
In order to achieve the purpose of the invention, the invention also provides a preparation method of the waveguide edge integrated coupler, which comprises the following steps:
Step one, designing and simulating an SOI waveguide structure adopting single-mode transmission, and obtaining the mode characteristics of waveguide emergent light according to the structural parameters of the SOI waveguide;
Designing structural parameters of the silicon micro lens according to single-mode fiber parameters and near-field coupling distance requirements, and obtaining Gaussian beam parameters of emergent light through theoretical calculation and numerical simulation;
Step three, carrying out joint simulation on the integral structure of the coupler and the single mode fiber to obtain theoretical coupling efficiency;
Step four, completing the manufacture of the coupling structure according to the theoretical design parameters of the SOI waveguide structure and the silicon micro lens structure obtained in the step one and the step two; and debugging and optimizing the design parameters through an actual active test result to obtain corresponding coupling efficiency and dislocation tolerance meeting actual coupling requirements, and preparing the waveguide edge integrated coupler of the specific PIC platform according to the optimized structural parameters of the SOI waveguide and the structural parameters of the silicon microlens.
Further, the structural parameters of the SOI waveguide in the first step include thicknesses of the substrate layer, the buried oxide layer, the ridge waveguide outer ridge layer, and the ridge waveguide inner ridge layer and used materials; the mode characteristics of the light emitted by the waveguide comprise polarization, energy distribution and light spot size.
Further, in the second step, the parameters of the single mode fiber include a mode field diameter MFD, a numerical aperture NA, and a refractive index profile n-profile; the near field coupling distance requirement means that it does not exceed 100 μm, and the coupling distance D 2 satisfies: a design margin of 0.ltoreq.D 2≤|dout±ZR |, where do ut is the distance between the image side beam waist position and the lens, Z R is the Rayleigh distance of the image Fang Gaosi beam, Z R＝πw0′2/4λ,w0' is the image side beam waist diameter size, and λ is the wavelength of light; the structural parameters of the silicon micro lens comprise front curvature R, thickness and surface shape size; the Gaussian beam parameters of the emergent light comprise waist spot size, light spot shape, space position, rayleigh distance, divergence angle and energy distribution.
Further, the simulation method in the third step is a beam propagation method BPM or a time domain finite difference method FDTD.
Compared with the prior art, the invention has the advantages that:
1) The coupling loss problem caused by waveguide/single-mode fiber mode spot matching and high refractive index difference is solved by using a small-size structure and in the near field, so that the far field energy loss is avoided; 2) The edge integration mode improves the unit integration level, reduces the packaging difficulty, and can reduce the volume of the silicon photonic device; 3) The cost advantage of non-arrayed coupling is evident over discrete coupling.
In order to make the functional characteristics and structural parameters of the device according to the claims, summary of the invention more clear, the following description is provided with reference to the attached drawings and the detailed description.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute a limitation on the application. In the drawings:
FIG. 1 is a schematic diagram of a waveguide edge integrated coupler structure;
FIG. 2 is a schematic diagram of an SOI waveguide structure;
FIG. 3 is a graph of the front-to-back waist-plaque relationship for a silicon microlens;
FIG. 4 is a schematic diagram of a light field coupling process;
FIG. 5 is a graph of coupling distance versus coupling efficiency;
FIG. 6 is a contour plot of end face misalignment versus coupling efficiency;
The reference numerals are: 1. the PIC device comprises a PIC device platform, 2, an SOI waveguide structure, 3, a silicon microlens, 4, a single-mode fiber, 2 a, a substrate layer, 2b, a buried oxide layer, 2c, a ridge waveguide outer ridge layer and a 2d ridge waveguide inner ridge layer.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all embodiments of the invention; all other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Examples
As shown in fig. 1-6, the present invention provides a waveguide edge integrated coupler and a preparation method thereof, which are used for realizing effective coupling of a near-field optical path from a silicon waveguide to a single-mode optical fiber in a PIC device platform.
The embodiment designs an edge integrated coupling structure of coupling an SOI waveguide structure with ridge layer size of 3 μm×3 μm and a single-mode fiber with core diameter of 8.6 μm at a near field distance of 100 μm under 1550nm wavelength light, which comprises the following specific contents:
as shown in fig. 1, the waveguide edge integrated coupler comprises a PIC device platform, an SOI waveguide structure, a silicon microlens and a single mode fiber; the silicon micro lens and the SOI waveguide structure are integrated on the same substrate, and the silicon micro lens is positioned at the edge of the light emergent surface of the SOI waveguide structure.
As shown in fig. 2, the SOI waveguide structure includes a substrate layer, a buried oxide layer, a ridge waveguide outer ridge layer, and a ridge waveguide inner ridge layer, wherein the ridge waveguide outer ridge layer has a thickness d, the ridge waveguide inner ridge layer has a thickness h, the ridge waveguide inner ridge layer has a width w, and the ridge waveguide outer ridge layer thickness d and the inner ridge layer thickness h satisfy a single mode condition, i.e., d=γ×h, γ >0.5. According to the stable single-mode condition, the SOI waveguide structure is designed, and specific parameters are as follows: ridge waveguide inner ridge layer width and thickness: w=h=3 μm, ridge waveguide outer ridge layer thickness: d=1.8 μm, the buried oxide layer thickness is 1.2 μm, and the substrate layer thickness is 2 μm. The substrate layer is made of Si, the buried oxide layer is made of SiO 2, and the ridge waveguide layer is made of Si; above the ridge waveguide layer is air.
As shown in fig. 3, the Z-axis represents the light propagation direction, and the position relationship of the waist spot at the image side is calculated by the finite difference time domain method (FDTD), and the silicon microlens designed in this embodiment is closely attached to the waveguide, that is, D 1 =0 μm, at this time, the beam waist diameter w 0 of the incident beam is similar to the size of the outgoing optical spot of the SOI waveguide, which is about 3.5 μm, and the position of the beam waist at the incident beam waist is D in =0 μm. In this embodiment, the ridge waveguide mode spot/core mode field size (MFD) is about 3.5 μm/9.89 μm, and the silicon microlens 3 structure is designed according to the mode spot matching requirement, and specific parameters are: front curvature r=25 μm, thickness 30 μm, shape size 10 μm×10 μm, and Si. The effective focal length of the lens is calculated to be about 13 μm, after the light beam exits from the lens, the beam waist diameter w 0' of the lens is about 10.6 μm, the beam waist diameter is matched with the mode field diameter MFD of a single-mode fiber, the Rayleigh distance Z R is about 40 μm, the distance do ut between the beam waist position of the lens and the lens is about 18 μm, and the theoretical design tolerance of the coupling distance D2 is as follows: d 2 is more than or equal to 0 and less than or equal to 58 mu m, and the coupling efficiency can reach more than 80 percent in the range.
As shown in fig. 4, the beam exits from the ridge waveguide, passes through the micro lens to change the propagation path of the beam and performs a certain degree of mode spot conversion, and enters the fiber core of the single-mode fiber after being spatially propagated. The optical field distribution in the Z direction from the ridge waveguide into the single mode fiber core is calculated using a beam propagation algorithm (BPM). The specific process is as follows: carrying out joint simulation on the SOI structure, the silicon micro lens and the single mode fiber, wherein the light beam propagates along the Z direction; the ridge waveguide/core mode field size is about 3.5 μm/9.89 μm; the ridge waveguide/core refractive index profile at 1550nm was 3.45/1.4682. Meanwhile, the microlens and the end face of the optical fiber are subjected to anti-reflection treatment, and the reflection loss is controlled within 1%.
As shown in fig. 5, a relationship curve of the coupling distance D 2 and the coupling efficiency is obtained, and it is seen that in this embodiment, the 1dB coupling range is 0 μm to 60 μm, and the coupling efficiency can reach 90% or more in 40 μm, and the coupling efficiency can be ensured to 68% in 100 μm of the near field.
As shown in fig. 6, considering the coupling loss caused by the dislocation of the end face in the actual coupling, by setting the dislocation parameters of the single-mode fiber and the SOI waveguide section, the dislocation loss tolerance under the condition of parallel end faces is simulated, and the contour diagram of the relationship between the dislocation of the end face and the coupling efficiency is obtained. It can be seen that in the (x, y) cross section, the coupling efficiency is more than 80% for y-direction offset, and for both lateral and longitudinal offsets δx, δy <1.5 μm.
Finally, the manufacturing of the coupling device can be completed according to the design structure of the embodiment, the design parameters are debugged and optimized through actual active test results to obtain corresponding coupling efficiency and dislocation tolerance meeting actual coupling requirements, and the waveguide edge integrated coupler of the specific PIC platform is prepared according to the optimized structural parameters of the SOI waveguide and the structural parameters of the silicon microlens.
Claims (2)
1. A waveguide edge integrated coupler, characterized in that the coupler comprises a PIC device platform (1), an SOI waveguide structure (2) and a silicon microlens (3); the silicon micro lens (3) and the SOI waveguide structure (2) are integrated on the PIC device platform (1) by the same substrate; the silicon micro lens (3) is positioned at the edge of the light emitting end face of the SOI waveguide structure (2); light is emitted from the PIC device platform (1) through the SOI waveguide structure (2), the silicon micro lens (3) performs mode spot conversion on the light beam, the light track is changed, the angle of incidence of the light into the fiber core is limited, and then the light is transmitted in space and then enters the fiber core of the single-mode fiber (4);
The SOI waveguide structure (2) comprises a substrate layer (2 a), a buried oxide layer (2 b), a ridge waveguide outer ridge layer (2 c) and a ridge waveguide inner ridge layer (2 d); the substrate layer (2 a), the buried oxide layer (2 b), the ridge waveguide outer ridge layer (2 c) and the ridge waveguide inner ridge layer (2 d) are sequentially stacked from bottom to top; the substrate layer (2 a) is made of Si, the buried oxide layer (2 b) is made of SiO 2, and the ridge waveguide outer ridge layer (2 c) and the ridge waveguide inner ridge layer (2 d) are made of Si; a coating of other materials can exist on the ridge waveguide outer ridge layer (2 c) and the ridge waveguide inner ridge layer (2 d);
The SOI waveguide structure (2) adopts a single-mode transmission mode; the thickness d of the ridge waveguide outer ridge layer (2 c) and the thickness h of the ridge waveguide inner ridge layer (2 d) meet the single-mode condition, namely d=gamma×h, and gamma is more than 0.5; the whole length of the SOI waveguide structure (2) is longer than the stable single-mode length of the SOI waveguide; the stable single-mode length of the SOI waveguide refers to the length of the SOI waveguide structure (2) when the light is transmitted through the SOI waveguide structure (2) and the finally transmitted light mode participating in coupling is a stable single-mode or a basic mode;
The interval between the silicon micro lens (3) and the light-emitting end face of the SOI waveguide structure (2) is D 1,D1, the value of which is more than or equal to 0 mu m, and the focal length of the silicon micro lens (3) is less than or equal to the value of the D 1,D1; the alignment form of the silicon micro lens (3) and the ridge layer (2 d) in the ridge waveguide is center alignment, the surface of the silicon micro lens (3) is formed into a non-sphere, and the material is Si;
The end face of the silicon micro lens (3) and the end face of the single-mode optical fiber (4) are subjected to anti-reflection treatment so as to reduce Fresnel reflection loss of a waveguide emergent beam through an air incident fiber core, and the loss is not more than 1%;
The near-field coupling distance between the end face of the silicon micro lens (3) and the end face of the single-mode optical fiber (4) is not more than 100 mu m, and the coupling distance D 2 meets the following conditions: the design tolerance of D 2≤|dout±ZR is not more than 0, wherein D out is the distance between the position of the waist spot on the image side and the lens, Z R is the Rayleigh distance of the beam on the image side Fang Gaosi, Z R＝πw0'2/4λ,w0' is the diameter of the waist on the image side, and lambda is the wavelength of light.
2. The preparation method of the waveguide edge integrated coupler is characterized by comprising the following steps of:
Step one, designing and simulating an SOI waveguide structure adopting single-mode transmission, and obtaining the mode characteristics of waveguide emergent light according to the structural parameters of the SOI waveguide;
Designing structural parameters of the silicon micro lens according to single-mode fiber parameters and near-field coupling distance requirements, and obtaining Gaussian beam parameters of emergent light through theoretical calculation and numerical simulation;
Step three, carrying out joint simulation on the integral structure of the coupler and the single mode fiber to obtain theoretical coupling efficiency;
Step four, completing the manufacture of the coupling structure according to the theoretical design parameters of the SOI waveguide structure and the silicon micro lens structure obtained in the step one and the step two; debugging and optimizing the design parameters through an actual active test result to obtain corresponding coupling efficiency and dislocation tolerance meeting actual coupling requirements, and preparing a waveguide edge integrated coupler of a specific PIC platform according to the optimized structural parameters of the SOI waveguide and the structural parameters of the silicon micro lens;
the structural parameters of the SOI waveguide in the first step comprise the thickness of each layer of a substrate layer, a buried oxide layer, a ridge waveguide outer ridge layer and a ridge waveguide inner ridge layer and used materials; the mode characteristics of the waveguide emergent light comprise polarization, energy distribution and light spot size;
The parameters of the single mode fiber in the second step comprise a mode field diameter MFD, a numerical aperture NA and a refractive index distribution n-profile; the near field coupling distance requirement means that it does not exceed 100 μm, and the coupling distance D 2 satisfies: a design margin of 0.ltoreq.D 2≤|dout±ZR |, where D out is the distance between the image side beam waist position and the lens, Z R is the Rayleigh distance of the image Fang Gaosi beam, Z R＝πw0'2/4λ,w0' is the image side beam waist diameter, and λ is the wavelength of light; the structural parameters of the silicon micro lens comprise front curvature R, thickness and surface shape size; the Gaussian beam parameters of the emergent light comprise waist spot size, light spot shape, space position, rayleigh distance, divergence angle and energy distribution;
The simulation method in the third step is a beam propagation method BPM or a time domain finite difference method FDTD.
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| CN107407778A (en) * | 2015-02-23 | 2017-11-28 | 思科技术公司 | Optical coupled waveguide |
| CN112817088A (en) * | 2021-04-20 | 2021-05-18 | 苏州海光芯创光电科技股份有限公司 | Silicon optical chip coupling structure with low coupling insertion loss and silicon-based wafer |
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| US7668416B2 (en) * | 2006-06-05 | 2010-02-23 | Bing Li | Single mode photonic circuit architecture and a new optical splitter design based on parallel waveguide mode conversion |
| US20080193079A1 (en) * | 2007-02-13 | 2008-08-14 | National Research Council Of Canada | Interface Device For Performing Mode Transformation in Optical Waveguides |
| CN101216577A (en) * | 2007-12-28 | 2008-07-09 | 武汉光迅科技股份有限公司 | Photon crystal optical fibre coupling method and its coupling apparatus |
| US20160062039A1 (en) * | 2014-09-02 | 2016-03-03 | Tyco Electronics Corporation | Mode size converters and optical assemblies |
| CN111367019A (en) * | 2020-02-20 | 2020-07-03 | 华东师范大学 | Optical waveguide coupling method based on optical fiber cone |
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| CN107407778A (en) * | 2015-02-23 | 2017-11-28 | 思科技术公司 | Optical coupled waveguide |
| CN112817088A (en) * | 2021-04-20 | 2021-05-18 | 苏州海光芯创光电科技股份有限公司 | Silicon optical chip coupling structure with low coupling insertion loss and silicon-based wafer |
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