CN113759672B - Exposure system and exposure method - Google Patents
Exposure system and exposure method Download PDFInfo
- Publication number
- CN113759672B CN113759672B CN202111041952.4A CN202111041952A CN113759672B CN 113759672 B CN113759672 B CN 113759672B CN 202111041952 A CN202111041952 A CN 202111041952A CN 113759672 B CN113759672 B CN 113759672B
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- China
- Prior art keywords
- exposure
- light
- mirror
- substrate
- light path
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Links
- 238000000034 method Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims description 51
- 238000002834 transmittance Methods 0.000 claims description 18
- 230000000903 blocking effect Effects 0.000 claims description 10
- 239000004973 liquid crystal related substance Substances 0.000 claims description 6
- 230000009286 beneficial effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/7015—Details of optical elements
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/702—Reflective illumination, i.e. reflective optical elements other than folding mirrors, e.g. extreme ultraviolet [EUV] illumination systems
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
The utility model provides an exposure system, includes light source subassembly, semi-lens, holophote, arc mirror group, mask plate and lens group, and the light that light source subassembly sent carries out the first exposure after half-lens, arc mirror group, mask plate, lens group in proper order, and holophote sets up with the half-lens relatively, and half-lens can reflect light to holophote, and the light of holophote reflection realizes the secondary exposure. The exposure system can improve the uniformity of the critical dimension of the line width of the image and the yield of products. The invention also relates to an exposure method.
Description
Technical Field
The invention relates to the technical field of circuit manufacture, in particular to an exposure system and an exposure method.
Background
The display panel includes a display region (ACTIVE AREA) and a wiring region (Fan-out) at an edge of the display region. The wiring in the wiring area is formed by exposing with an exposure machine and then developing. However, the line width CD of the manufactured image is locally abnormal, and the line width is larger or smaller, which affects the uniformity of the CD and the SPC CPK (quality system control index) and affects the yield of the product.
Disclosure of Invention
In view of this, the present invention provides an exposure system, which can improve the uniformity of critical dimensions of image linewidth and product yield.
The utility model provides an exposure system, includes light source subassembly, semi-lens, holophote, arc mirror group, mask plate and lens group, and the light that light source subassembly sent carries out the first exposure after half-lens, arc mirror group, mask plate, lens group in proper order, and holophote sets up with the half-lens relatively, and half-lens can reflect light to holophote, and the light of holophote reflection realizes the secondary exposure.
In an embodiment of the present invention, the total reflection mirror and the mask plate are staggered, and the light reflected by the total reflection mirror does not pass through the mask plate and the lens group.
In an embodiment of the present invention, the exposure system further includes a perspective screen, where the perspective screen is disposed opposite to the total reflection mirror, and the light reflected by the total reflection mirror passes through the perspective screen to implement the second exposure, and the perspective screen is used to control the transmittance of the light.
In an embodiment of the present invention, the above-mentioned see-through screen includes a first substrate, a second substrate, and a liquid crystal layer disposed between the first substrate and the second substrate, where a circuit layer for driving liquid crystal molecules to deflect is disposed on the first substrate and/or the second substrate.
In an embodiment of the present invention, the lens group includes a trapezoidal mirror, a concave mirror, and a convex mirror, where the trapezoidal mirror is disposed opposite to the light-emitting surface of the mask plate, the convex mirror is disposed between the trapezoidal mirror and the concave mirror, and the light is reflected by the trapezoidal mirror, the concave mirror, the convex mirror, the concave mirror, and the trapezoidal mirror in order and then subjected to the first exposure.
In an embodiment of the present invention, the exposure system further includes a first light shielding device and a second light shielding device, where the first light shielding device is disposed on the light path of the first exposure, the first light shielding device is used for conducting or blocking the light path of the exposure, the second light shielding device is disposed on the light path of the second exposure, and the second light shielding device is used for conducting or blocking the light path of the exposure.
In an embodiment of the present invention, the transmittance of the half lens is greater than or equal to 80%, and the reflectance of the half lens is less than or equal to 20%.
The invention also relates to an exposure method, which utilizes the exposure system, and comprises the following steps:
Controlling the light source assembly to emit light, and performing first exposure on the substrate to be exposed after the light sequentially passes through the semi-transparent mirror, the arc-shaped mirror group, the mask plate and the lens group;
And reflecting the light to the total reflection mirror by using the semi-transparent mirror, and performing a second exposure on the substrate by using the light reflected by the total reflection mirror.
In an embodiment of the present invention, the method further includes:
and setting a perspective screen on the light path of the second exposure, and utilizing the perspective screen to shield light and control the transmittance of the perspective screen.
In an embodiment of the present invention, the method further includes:
A first shading device is arranged on the light path of the first exposure, a second shading device is arranged on the light path of the second exposure, the first shading device is used for conducting or blocking the light path of the exposure, and the second shading device is used for conducting or blocking the light path of the exposure;
when the first exposure is carried out on the substrate, the first shading device is controlled to conduct the light path, and the second shading device is controlled to block the light path;
When the substrate is subjected to the second exposure, the first shading device is controlled to block the light path, and the second shading device is controlled to conduct the light path.
The exposure system can perform exposure of different light amounts on the substrate twice, perform exposure of normal light amount on the substrate for the first time, perform exposure on the substrate for the second time after the exposure is completed, shape the image on the substrate, and be beneficial to improving the uniformity of the line width Critical Dimension (CD) of the image and the quality system control index (SPC CPK), thereby improving the product yield.
Drawings
Fig. 1 is a schematic diagram of the structure of an exposure system of the present invention.
FIG. 2 is a schematic diagram of an exposure system of the present invention when a substrate is first exposed.
FIG. 3 is a schematic diagram of the exposure system of the present invention in a second exposure of a substrate.
Fig. 4 is a schematic view of the substrate after exposure.
Detailed Description
The invention provides an exposure system.
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
For the convenience of understanding of those skilled in the art, the following examples are provided to illustrate specific implementation procedures of the technical solution provided in the present invention.
Fig. 1 is a schematic view of an exposure system according to the present invention, fig. 2 is a schematic view of the exposure system according to the present invention when a substrate is exposed for the first time, fig. 3 is a schematic view of the exposure system according to the present invention when a substrate is exposed for the second time, fig. 4 is a schematic view of the exposed substrate after development, and as shown in fig. 1 to fig. 4, the exposure system includes a light source assembly 11, a semi-transparent mirror 12, a total reflection mirror 13, an arc mirror group 14, a mask plate 15 and a lens group 16, wherein light emitted from the light source assembly 11 sequentially passes through the semi-transparent mirror 12, the arc mirror group 14, the mask plate 15 and the lens group 16, and then is exposed for the first time, the total reflection mirror 13 is disposed opposite to the semi-transparent mirror 12, and the semi-transparent mirror 12 can reflect light to the total reflection mirror 13, so that the light reflected by the total reflection mirror 13 realizes the second exposure.
The exposure system can perform exposure of different light amounts on the substrate twice, perform exposure of normal light amount on the substrate for the first time, perform exposure on the substrate for the second time after the exposure is completed, shape the image on the substrate, and be beneficial to improving the uniformity of the line width Critical Dimension (CD) of the image and the quality system control index (SPC CPK), thereby improving the product yield.
Further, the total reflection mirror 13 is staggered with the mask plate 15, and the light reflected by the total reflection mirror 13 does not pass through the mask plate 15 and the lens group 16.
Further, the exposure system further comprises a perspective screen 17, the perspective screen 17 is arranged opposite to the total reflection mirror 13, the light reflected by the total reflection mirror 13 passes through the perspective screen 17 to realize second exposure, and the perspective screen 17 is used for controlling the light transmittance. In this embodiment, the perspective screen 17 controls the exposure energy by controlling the light transmittance, so as to ensure that the second exposure energy is 0% -10% of the first exposure energy, and realize the image shaping function, for example, fine-tuning the Critical Dimension (CD) of the line width of the image to be within 1 um.
Further, the see-through screen 17 includes a first substrate, a second substrate, and a liquid crystal layer disposed between the first substrate and the second substrate, where the first substrate and/or the second substrate are provided with a circuit layer for driving the liquid crystal molecules to deflect. In this embodiment, the first substrate and the second substrate are transparent substrates, for example, glass plates or transparent plastic plates, and can be freely selected according to actual needs.
Further, the lens group 16 includes a trapezoidal mirror 161, a concave mirror 162, and a convex mirror 163, where the trapezoidal mirror 161 is disposed opposite to the light-emitting surface of the mask 15, the convex mirror 163 is disposed between the trapezoidal mirror 161 and the concave mirror 162, and the light is reflected by the trapezoidal mirror 161, the concave mirror 162, the convex mirror 163, the concave mirror 162, and the trapezoidal mirror 161 in order and then subjected to the first exposure.
Further, the exposure system further includes a first light shielding device (not shown) disposed on the light path of the first exposure, the first light shielding device being configured to conduct or block the light path of the exposure, and a second light shielding device (not shown) disposed on the light path of the second exposure, the second light shielding device being configured to conduct or block the light path of the exposure. In this embodiment, when the first exposure is performed, the first light shielding device is controlled to conduct the light path, and the second light shielding device is controlled to block the light path; when the second exposure is carried out, the first shading device is controlled to block the light path, and the second shading device is controlled to conduct the light path.
Further, the transmittance of the half mirror 12 is 80% or more, the reflectance of the half mirror 12 is 20% or less, preferably, the transmittance of the half mirror 12 is 85%, the reflectance is 15%, the transmittance of the half mirror 12 is 90%, the reflectance is 10%, the transmittance of the half mirror 12 is 95%, and the reflectance is 5%.
Further, the light source assembly 11 includes a light source 111 for emitting light, and a reflecting mirror 112 for reflecting the light to the half mirror 12.
Referring to fig. 1 to 4, the present invention further relates to an exposure method, which uses the exposure system, and the exposure method includes:
Controlling the light source assembly 11 to emit light, and performing first exposure on the substrate to be exposed after the light sequentially passes through the half lens 12, the arc-shaped lens group 14, the mask plate 15 and the lens group 16;
the light is reflected to the total reflection mirror 13 by the half lens 12, and the substrate is subjected to a second exposure by the light reflected by the total reflection mirror 13.
The exposure method can perform exposure of different light amounts on the substrate twice, perform exposure of normal light amount on the substrate for the first time, perform exposure on the substrate for the second time after the exposure is completed, shape the image on the substrate, and is beneficial to improving the uniformity of the Critical Dimension (CD) of the line width of the image and the quality system control index (SPC CPK), thereby improving the product yield.
Further, the exposure method further includes:
The perspective screen 17 is arranged on the light path of the second exposure, and the light is shielded by the perspective screen 17, so that the transmittance of the perspective screen 17 is controlled. In this embodiment, the perspective screen 17 controls the exposure energy by controlling the light transmittance, so as to ensure that the second exposure energy is 0% -10% of the first exposure energy, and realize the image shaping function, for example, fine-tuning the Critical Dimension (CD) of the line width of the image to be within 1 um. ,
Further, the exposure method further includes:
the first shading device is arranged on the light path of the first exposure, the second shading device is arranged on the light path of the second exposure, the first shading device is used for conducting or blocking the light path of the exposure, and the second shading device is used for conducting or blocking the light path of the exposure;
when the substrate is subjected to the first exposure, the first shading device is controlled to conduct the light path, and the second shading device is controlled to block the light path;
when the substrate is subjected to the second exposure, the first shading device is controlled to block the light path, and the second shading device is controlled to conduct the light path.
Further, the transmittance of the half mirror 12 is 80% or more, the reflectance of the half mirror 12 is 20% or less, preferably, the transmittance of the half mirror 12 is 85%, the reflectance is 15%, the transmittance of the half mirror 12 is 90%, the reflectance is 10%, the transmittance of the half mirror 12 is 95%, and the reflectance is 5%.
The preferred embodiments of the present invention have been described in detail above with reference to the accompanying drawings, but the present invention is not limited to the specific details of the above embodiments, and various simple modifications can be made to the technical solution of the present invention within the scope of the technical concept of the present invention, and all the simple modifications belong to the protection scope of the present invention. The individual technical features described in the above embodiments may be combined in any suitable manner without contradiction. The various possible combinations of the invention are not described in detail in order to avoid unnecessary repetition.
Claims (9)
1. The exposure system is characterized by comprising a light source assembly, a half lens, a total reflecting mirror, an arc-shaped mirror group, a mask plate and a lens group, wherein light emitted by the light source assembly sequentially passes through the half lens, the arc-shaped mirror group, the mask plate and the lens group and then is subjected to first exposure, the total reflecting mirror and the half lens are oppositely arranged, the half lens can reflect light to the total reflecting mirror, the light reflected by the total reflecting mirror realizes second exposure, the total reflecting mirror and the mask plate are staggered, and the light reflected by the total reflecting mirror does not pass through the mask plate and the lens group.
2. The exposure system of claim 1, further comprising a see-through screen disposed opposite the total reflection mirror, wherein the second exposure is performed after the light reflected by the total reflection mirror passes through the see-through screen, and wherein the see-through screen is configured to control a transmittance of the light.
3. The exposure system according to claim 2, wherein the see-through screen comprises a first substrate, a second substrate, and a liquid crystal layer disposed between the first substrate and the second substrate, and a circuit layer for driving liquid crystal molecules to deflect is disposed on the first substrate and/or the second substrate.
4. The exposure system according to claim 1, wherein the lens group includes a trapezoidal mirror, a concave mirror, and a convex mirror, the trapezoidal mirror is disposed opposite to the light-emitting surface of the mask plate, the convex mirror is disposed between the trapezoidal mirror and the concave mirror, and the light is reflected by the trapezoidal mirror, the concave mirror, the convex mirror, the concave mirror, and the trapezoidal mirror in order, and then the first exposure is performed.
5. The exposure system of claim 1, further comprising a first light shielding device disposed on the light path of the first exposure, the first light shielding device for conducting or blocking the light path of the exposure, and a second light shielding device disposed on the light path of the second exposure, the second light shielding device for conducting or blocking the light path of the exposure.
6. The exposure system according to any one of claims 1 to 5, wherein the transmittance of the half mirror is 80% or more, and the reflectance of the half lens is 20% or less.
7. An exposure method, characterized in that the method utilizes the exposure system according to any one of claims 1 to 6, the method comprising:
Controlling the light source assembly to emit light, and performing first exposure on the substrate to be exposed after the light sequentially passes through the semi-transparent mirror, the arc-shaped mirror group, the mask plate and the lens group;
And reflecting the light to the total reflection mirror by using the semi-transparent mirror, and performing a second exposure on the substrate by using the light reflected by the total reflection mirror.
8. The exposure method according to claim 7, characterized in that the method further comprises:
and setting a perspective screen on the light path of the second exposure, and utilizing the perspective screen to shield light and control the transmittance of the perspective screen.
9. The exposure method according to claim 7, characterized in that the method further comprises:
A first shading device is arranged on the light path of the first exposure, a second shading device is arranged on the light path of the second exposure, the first shading device is used for conducting or blocking the light path of the exposure, and the second shading device is used for conducting or blocking the light path of the exposure;
when the first exposure is carried out on the substrate, the first shading device is controlled to conduct the light path, and the second shading device is controlled to block the light path;
When the substrate is subjected to the second exposure, the first shading device is controlled to block the light path, and the second shading device is controlled to conduct the light path.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111041952.4A CN113759672B (en) | 2021-09-07 | 2021-09-07 | Exposure system and exposure method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111041952.4A CN113759672B (en) | 2021-09-07 | 2021-09-07 | Exposure system and exposure method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113759672A CN113759672A (en) | 2021-12-07 |
| CN113759672B true CN113759672B (en) | 2024-06-11 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111041952.4A Active CN113759672B (en) | 2021-09-07 | 2021-09-07 | Exposure system and exposure method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113759672B (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0689844A (en) * | 1992-09-09 | 1994-03-29 | Toshiba Corp | Aligner |
| JPH088169A (en) * | 1994-06-23 | 1996-01-12 | Nikon Corp | Exposure system |
| JPH0845815A (en) * | 1994-07-28 | 1996-02-16 | Toshiba Corp | Circular arc formation lighting system and exposure device using it |
| JPH08192287A (en) * | 1995-01-17 | 1996-07-30 | Toshiba Corp | Light source device for exposure and laser aligner |
| KR20080001427A (en) * | 2006-06-29 | 2008-01-03 | 엘지.필립스 엘시디 주식회사 | Exposure apparatus |
| CN102243444A (en) * | 2010-05-14 | 2011-11-16 | 北京京东方光电科技有限公司 | Exposure equipment, mask plate and exposure method |
| JP2014110385A (en) * | 2012-12-04 | 2014-06-12 | Canon Inc | Exposure apparatus, and device manufacturing method |
| CN104460227A (en) * | 2014-12-15 | 2015-03-25 | 合肥京东方光电科技有限公司 | Film patterning method |
| JP2016143869A (en) * | 2015-02-05 | 2016-08-08 | キヤノン株式会社 | Exposure device, and method of manufacturing article |
-
2021
- 2021-09-07 CN CN202111041952.4A patent/CN113759672B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0689844A (en) * | 1992-09-09 | 1994-03-29 | Toshiba Corp | Aligner |
| JPH088169A (en) * | 1994-06-23 | 1996-01-12 | Nikon Corp | Exposure system |
| JPH0845815A (en) * | 1994-07-28 | 1996-02-16 | Toshiba Corp | Circular arc formation lighting system and exposure device using it |
| JPH08192287A (en) * | 1995-01-17 | 1996-07-30 | Toshiba Corp | Light source device for exposure and laser aligner |
| KR20080001427A (en) * | 2006-06-29 | 2008-01-03 | 엘지.필립스 엘시디 주식회사 | Exposure apparatus |
| CN102243444A (en) * | 2010-05-14 | 2011-11-16 | 北京京东方光电科技有限公司 | Exposure equipment, mask plate and exposure method |
| JP2014110385A (en) * | 2012-12-04 | 2014-06-12 | Canon Inc | Exposure apparatus, and device manufacturing method |
| CN104460227A (en) * | 2014-12-15 | 2015-03-25 | 合肥京东方光电科技有限公司 | Film patterning method |
| JP2016143869A (en) * | 2015-02-05 | 2016-08-08 | キヤノン株式会社 | Exposure device, and method of manufacturing article |
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| Publication number | Publication date |
|---|---|
| CN113759672A (en) | 2021-12-07 |
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