CN113702405A - Method for detecting defects of silicon wafer - Google Patents
Method for detecting defects of silicon wafer Download PDFInfo
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- CN113702405A CN113702405A CN202110982198.8A CN202110982198A CN113702405A CN 113702405 A CN113702405 A CN 113702405A CN 202110982198 A CN202110982198 A CN 202110982198A CN 113702405 A CN113702405 A CN 113702405A
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- 230000007547 defect Effects 0.000 title claims abstract description 63
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 48
- 239000010703 silicon Substances 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000001514 detection method Methods 0.000 claims abstract description 19
- 238000009826 distribution Methods 0.000 claims abstract description 11
- 238000007689 inspection Methods 0.000 claims description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 238000004140 cleaning Methods 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 51
- 239000010410 layer Substances 0.000 description 18
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 239000003518 caustics Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/02—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material
- G01N23/04—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by transmitting the radiation through the material and forming images of the material
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials
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- Chemical & Material Sciences (AREA)
- Biochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The embodiment of the invention discloses a method for detecting defects of a silicon wafer, which comprises the following steps: s101: carrying out single first detection on the whole main surface of the silicon wafer by using an X-ray topographer so as to obtain the whole defect information of the main surface; s102: determining the distribution positions of the defects formed in the silicon wafer in the main surface according to the overall defect information; s103: performing, with the X-ray topographer, respective second detections, a plurality of times, on a plurality of different layers of the silicon wafer arranged in parallel along a silicon wafer thickness direction at the distribution locations in the major surface, to obtain respective two-dimensional shapes of the defects in the plurality of different layers; s104: and fitting the plurality of two-dimensional shapes to obtain a three-dimensional shape of the defect.
Description
Technical Field
The invention relates to the field of semiconductor silicon wafer manufacturing, in particular to a method for detecting defects of a silicon wafer.
Background
In the production process of silicon wafers, various mechanical surface treatment procedures such as slicing, grinding, polishing and the like are usually included, and the treatment procedures inevitably damage the surfaces of the silicon wafers so as to introduce defects such as cracks, scratches, dislocations and the like into the surfaces/sub-surfaces of the silicon wafers, influence the performance of finally obtained semiconductor products and further influence the service life and yield of devices.
The defects generated in the above-described treatment process are first formed on the surface of the silicon wafer and extend into the silicon wafer along the thickness direction of the silicon wafer.
Determining the depth of the silicon wafer defects generated in each process step is important because the thickness of the surface layer of the silicon wafer to be removed in the next process step can be determined according to the depth of the silicon wafer defects to remove the defects in the silicon wafer.
Currently, an angle polishing method is generally adopted for detecting the depth of a silicon wafer defect, and in the method, an inclined surface in the thickness direction of a silicon wafer sample needs to be angularly polished so as to expose the defect in the sample for detection. However, in this method, the silicon wafer needs to be damaged, and only the local defect depth of the sample can be detected; new defects may be introduced during the angular polishing of the specimen, thereby increasing the error of the detection result; in the method, after the defects are exposed, the defects need to be observed under a microscope, before the defects need to be amplified by carrying out corrosion treatment on a sample, and since the sample is corroded highly depending on the type, concentration, temperature and corrosion time of the corrosive agent, the corrosion process is difficult to control accurately, so that if the corrosion is excessive, the defects cannot be evaluated correctly; corrosion of the polished specimen releases the strain energy at the crack tip, causing crack propagation, resulting in the detected damage depth being the crack-propagated length.
Disclosure of Invention
In order to solve the above technical problems, embodiments of the present invention are expected to provide a method for detecting defects of a silicon wafer, which can obtain defect depth information of the entire silicon wafer without destroying the silicon wafer and without introducing new defects.
The technical scheme of the invention is realized as follows:
the embodiment of the invention provides a method for detecting defects of a silicon wafer, which comprises the following steps:
s101: carrying out single first detection on the whole main surface of the silicon wafer by using an X-ray topographer so as to obtain the whole defect information of the main surface;
s102: determining the distribution positions of the defects formed in the silicon wafer in the main surface according to the overall defect information;
s103: performing, with the X-ray topographer, respective second detections, a plurality of times, on a plurality of different layers of the silicon wafer arranged in parallel along a silicon wafer thickness direction at the distribution locations in the major surface, to obtain respective two-dimensional shapes of the defects in the plurality of different layers;
s104: and fitting the plurality of two-dimensional shapes to obtain a three-dimensional shape of the defect.
In the method, the silicon wafer is only required to be scanned by X-rays, so that the silicon wafer cannot be damaged and destroyed, new defects cannot be introduced into the silicon wafer, and therefore, the detection result cannot be influenced.
Drawings
FIG. 1 is a schematic diagram of a method for detecting defects of a silicon wafer according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of an apparatus for performing a first step in a method according to an embodiment of the present invention;
fig. 3 is a schematic diagram of an apparatus for performing a second step in the method according to the embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention.
Referring to fig. 1 in conjunction with fig. 2 and 3, an embodiment of the present invention provides a method for detecting a defect D of a wafer W as shown in fig. 2, the wafer W may be formed with first and second defects D1 and D2 generated in a process, at a main surface S of the wafer W and extending toward the inside of the wafer in a thickness direction DR of the wafer W, as exemplarily shown in fig. 2, and the method may include:
s101: performing single first detection on the whole main surface S of the silicon wafer W by using an X-ray topographer to obtain the whole defect information of the main surface S, wherein the following description is provided: the wafer W is generally sheet-like, and therefore the main surface S herein refers to a surface of the wafer W parallel to the plane in which the wafer W is located, and is circular in the case where the wafer W is circular as shown in FIG. 2, for example; the X-ray topographer is not shown in the drawings, but it is well known to those skilled in the art that the X-ray topographer may emit X-rays R, such as shown schematically in fig. 2 and 3 by box-like shaded areas filled with grids, and the wafer W may be placed on a stage of the X-ray topographer such that scanning across the major surface S and diffraction may be accomplished, such as in fig. 2, as the X-rays move along arrow a1, while detectors of the X-ray topographer collect and image the diffracted light using an ultra-high precision camera, thereby obtaining overall defect information for the major surface S;
s102: determining the distribution position of the defect D formed in the wafer W in the main surface S based on the global defect information, that is, after acquiring the global defect information of the entire main surface S, although the extension of the defect D in the wafer thickness direction DR cannot be obtained, the distribution position of the defect D in the main surface S can be obtained, for example, in the case shown in fig. 2, it can be known from the global defect information of the entire main surface S that two defects, i.e., a first defect D1 and a second defect D2, are formed in the wafer W and the positions of the two defects in the main surface S can be determined;
s103: performing a corresponding plurality of second inspections of a plurality of different layers L of the wafer W arranged in parallel in the wafer thickness direction DR at the distribution positions in the main surface S by means of the X-ray topographer to obtain a corresponding plurality of two-dimensional shapes S2 of the defects D in the plurality of different layers L, wherein the X-ray topographer is exemplarily shown in fig. 3 to inspect at the distribution positions of a first defect D1, wherein fig. 3 exemplarily shows four layers L, respectively a first layer L1, a second layer L2, a third layer L3, and a fourth layer L4, which are sequentially arranged from top to bottom, and which are respectively filled with shaded regions of different depths for the purpose of distinguishing from each other, wherein fig. 3 exemplarily shows that X-rays R emitted by the X-ray topographer are performing a single second inspection of the first layer L1, and likewise, the X-ray R may scan and diffract the first layer L1, and the detector of the X-ray topographer collects and images the diffracted light using a super high precision camera, thereby obtaining a two-dimensional shape S2-1 of the defect D in the first layer L1, wherein the two-dimensional shape S2 is schematically illustrated in fig. 3 by a dotted line, and specifically, the two-dimensional shape S2-1 is the shape of the defect D1 in the first layer L1, the two-dimensional shape S2-2 is the shape of the defect D1 in the second layer L2, the two-dimensional shape S2-3 is the shape of the defect D1 in the third layer L3, and the two-dimensional shape S2-4 is the shape of the defect D1 in the fourth layer L4;
s104: the plurality of two-dimensional shapes S2 are fitted to obtain a three-dimensional shape S3 of the defect D, as schematically shown by the dashed lines in fig. 3, where the fitting may be implemented using commercially available Slicing 3D section topo software and Image J software.
In the detection method, the silicon wafer W only needs to be scanned by the X-ray R, so that the silicon wafer W is not damaged or destroyed, a new defect is not introduced into the silicon wafer W, and therefore, the detection result is not influenced.
In a preferred embodiment of the present invention, the method may further include cleaning the silicon wafer W with hydrofluoric acid to remove the silicon oxide layer on the surface of the silicon wafer W before the first inspection, whereby the influence of the silicon oxide layer on the inspection result may be prevented. Here, the concentration of hydrofluoric acid is preferably 1% to 49%, and the cleaning time is preferably 60 seconds to 5 minutes.
As is well known to those skilled in the art, the X-ray topographer can operate in both a reflection mode, which is generally used for inspecting the surface of an object to be inspected and can perform a large area inspection in a short time or with high inspection efficiency, and a transmission mode, which is generally used for inspecting the interior of an object to be inspected but with relatively low inspection efficiency. In a preferred embodiment of the invention, the X-ray topographer may perform the first detection in a reflective mode and the X-ray topographer may perform the second detection in a transmissive mode. Thus, although the area of the main surface S of the wafer W is large as shown in fig. 2, the inspection of the entire main surface S can be completed in a short time because the detection efficiency of the reflection mode is high, whereas the inspection is performed only at the distribution positions of the main surface S where the defects D are distributed or the region to be inspected is small although the detection efficiency of the transmission mode is low, and thus the inspection can be completed in a short time, thereby minimizing the time taken to inspect the entire wafer.
In the case where the first detection is performed by the X-ray topographer in reflection mode, the X-ray emitting source of the X-ray topographer may employ a copper target and cooperate with a collimator in a preferred embodiment of the invention. As is well known to those skilled in the art, X-rays are generated by bombarding a substance with high-speed hot electrons, so that many substances can excite X-rays, and the wavelengths of the excited X-rays are different due to the difference of electron energy and energy level of different substances; copper target here means that elemental copper is used for exciting X-rays; the emission source refers to a system for generating rays, including a filament for generating thermoelectrons, a copper target or a molybdenum target, a cooling system, and the like. As is well known to those skilled in the art, a collimator is also a crystal that acts to homogenize the light wave of the X-rays, otherwise two diffracted beams would appear during the detection process, which would interfere with the detection result.
In the above case, in the preferred embodiment of the present invention, the diffraction plane may adopt the {224}, the diffraction angle may adopt 88.02 °, and the collimator may adopt the {224} crystal plane. As is well known to those skilled in the art, a diffraction plane refers to a certain crystal plane in a silicon crystal, a diffraction angle refers to an included angle between an incident X-ray and a diffracted X-ray when the X-ray diffracts the certain crystal plane, and a relationship between the diffraction plane and the diffraction angle is calculated according to a bragg equation; for the X-rays that have been determined, each diffraction surface corresponds to a unique diffraction angle.
In the case where the X-ray topographer performs the second inspection in transmission mode, in a preferred embodiment of the invention, the X-ray emitting source of the X-ray topographer may employ a molybdenum target. Similarly to copper targets, molybdenum targets are used here to mean the use of elemental molybdenum for exciting X-rays.
In the above case, in the preferred embodiment of the present invention, the diffraction plane may adopt {400} and the diffraction angle may adopt 30.28 °.
It should be noted that: the technical schemes described in the embodiments of the present invention can be combined arbitrarily without conflict.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (8)
1. A method for detecting defects in a silicon wafer, the method comprising:
s101: carrying out single first detection on the whole main surface of the silicon wafer by using an X-ray topographer so as to obtain the whole defect information of the main surface;
s102: determining the distribution positions of the defects formed in the silicon wafer in the main surface according to the overall defect information;
s103: performing, with the X-ray topographer, respective second detections, a plurality of times, on a plurality of different layers of the silicon wafer arranged in parallel along a silicon wafer thickness direction at the distribution locations in the major surface, to obtain respective two-dimensional shapes of the defects in the plurality of different layers;
s104: and fitting the plurality of two-dimensional shapes to obtain a three-dimensional shape of the defect.
2. The method of claim 1, further comprising cleaning the silicon wafer with hydrofluoric acid to remove a silicon oxide layer on a surface of the silicon wafer prior to the first inspection.
3. The method of claim 1, wherein the X-ray topographer performs the first inspection using a reflectance mode.
4. The method of claim 3, wherein the X-ray emitting source of the X-ray topographer employs a copper target and cooperates with a collimator.
5. The method of claim 4, wherein the diffraction plane is {224}, the diffraction angle is 88.02 °, and the collimator is a {224} crystal plane.
6. The method of claim 1, wherein the X-ray topographer performs the second inspection in transmission mode.
7. The method of claim 6, wherein the X-ray emitting source of the X-ray topographer employs a molybdenum target.
8. The method of claim 7, wherein the diffraction plane is {400} and the diffraction angle is 30.28 °.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110982198.8A CN113702405A (en) | 2021-08-25 | 2021-08-25 | Method for detecting defects of silicon wafer |
| TW111129308A TWI817640B (en) | 2021-08-25 | 2022-08-04 | A method for detecting defects in silicon wafers |
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| CN202110982198.8A CN113702405A (en) | 2021-08-25 | 2021-08-25 | Method for detecting defects of silicon wafer |
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| CN113702405A true CN113702405A (en) | 2021-11-26 |
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| CN118163030B (en) * | 2024-05-10 | 2024-07-30 | 西安奕斯伟材料科技股份有限公司 | Angle polishing device and angle polishing method |
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| TWI817640B (en) | 2023-10-01 |
| TW202300904A (en) | 2023-01-01 |
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Address after: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant after: Xi'an Yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710065 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an City, Shaanxi Province Applicant before: Xi'an yisiwei Material Technology Co.,Ltd. Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
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