CN113624368A - High-temperature-resistant oil-filled SOI pressure sensor - Google Patents
High-temperature-resistant oil-filled SOI pressure sensor Download PDFInfo
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- CN113624368A CN113624368A CN202110693944.1A CN202110693944A CN113624368A CN 113624368 A CN113624368 A CN 113624368A CN 202110693944 A CN202110693944 A CN 202110693944A CN 113624368 A CN113624368 A CN 113624368A
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- 239000003921 oil Substances 0.000 claims abstract description 64
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 37
- 239000010703 silicon Substances 0.000 claims abstract description 37
- 239000011521 glass Substances 0.000 claims abstract description 27
- 239000012212 insulator Substances 0.000 claims abstract description 25
- 239000000919 ceramic Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- 229920002545 silicone oil Polymers 0.000 claims abstract description 22
- 238000011049 filling Methods 0.000 claims abstract description 16
- 238000000746 purification Methods 0.000 claims abstract description 6
- 239000013078 crystal Substances 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 229910000831 Steel Inorganic materials 0.000 claims description 7
- 229910052796 boron Inorganic materials 0.000 claims description 7
- 239000010959 steel Substances 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 5
- 238000009530 blood pressure measurement Methods 0.000 abstract description 5
- 238000002955 isolation Methods 0.000 description 17
- 238000000034 method Methods 0.000 description 11
- 238000005245 sintering Methods 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- 239000005388 borosilicate glass Substances 0.000 description 6
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 229920006335 epoxy glue Polymers 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 238000005459 micromachining Methods 0.000 description 3
- 238000012536 packaging technology Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The invention discloses a high-temperature-resistant oil-filled SOI pressure sensor which comprises a shell, wherein a pressure ring is arranged at the top of the shell, a corrugated diaphragm is arranged inside the pressure ring, a closed oil-filled cavity is formed by the pressure ring, the corrugated diaphragm and the upper part of the shell, and the oil-filled cavity has a vacuum degree of 10‑4The high-vacuum silicone oil filling system of Pa is used for high-temperature purification and high-vacuum degree high-temperature silicone oil filling; a glass insulator is hermetically arranged in the shell, an SOI pressure sensitive chip is arranged at the top of the glass insulator, and one end of a metal wire penetrates through the glass insulator and is electrically connected with the bottom of the SOI pressure sensitive chip; the SOI pressure sensitive chip is positioned in the oil charging cavity and is contacted with high-temperature silicon oil, a ceramic wafer is arranged between the SOI pressure sensitive chip and the corrugated diaphragm, and a through hole is formed in the middle of the ceramic wafer. The invention realizes the pressure measurement in the high-temperature environment, and has the characteristics of good dynamic characteristic, high temperature resistance and high precision, and has better practicability.
Description
Technical Field
The invention belongs to the technical field of pressure sensors, and particularly relates to a high-temperature-resistant oil-filled SOI pressure sensor.
Background
The traditional silicon pressure sensor is usually isolated by a PN junction, and the process has the defects that the working temperature is low, and the PN junction leakage current is increased under a high-temperature environment (more than or equal to 85 ℃), so that the device is failed. In order to meet the pressure testing requirements under the high-temperature and severe working conditions of aerospace, petrochemical industry, internal combustion engines and the like, a high-temperature resistant pressure sensor based on a silicon isolation SOI (silicon on insulator) technology is widely applied.
The SOI pressure sensor is a novel semiconductor high-temperature pressure sensor, the conventional SOI pressure sensor takes N-type silicon as a substrate material, a group of P-type resistors are processed on the substrate material through thick boron diffusion, the P-type resistors and the N-type substrate are used as medium isolation layers through oxidation layers, a Wheatstone bridge is formed by connecting the resistors, after the diffusion resistors are acted by force, the resistivity changes, mechanical signals are converted into equal-proportion electric signals through circuits to be output, and the purpose of pressure measurement is achieved. Compared with a diffused silicon pressure sensor, the high-sensitivity high-stability diffusion silicon pressure sensor has higher working temperature, has higher sensitivity, and has the characteristics of high sensitivity, high use temperature range and high stability.
At present, the SOI pressure sensor generally realizes the lead connection between a chip and an outer lead by hot-pressing ball bonding, ultrasonic ball bonding and other methods, and the failure proportion of the lead bonding is up to 30 percent, and the anti-seismic performance is poor. The conventional oil-filled packaging mode has the limitation of the silicone oil filling process and the use temperature of the silicone oil, so the long-term use temperature cannot exceed 150 ℃.
Disclosure of Invention
The invention aims to provide a high-temperature-resistant oil-filled SOI pressure sensor, aiming at solving the problems.
The invention is mainly realized by the following technical scheme:
a high temperature resistant oil-filled SOI pressure sensor comprises a shell, wherein the shellThe top of clamping ring is provided with the clamping ring, the inside of clamping ring is provided with the ripple diaphragm, and the upper portion of clamping ring, ripple diaphragm and casing constitutes inclosed oil-filled chamber, the oil-filled chamber is 10 through vacuum-4The high-vacuum silicone oil filling system of Pa is used for high-temperature purification and high-vacuum degree high-temperature silicone oil filling; a glass insulator is hermetically arranged in the shell, an SOI pressure sensitive chip is arranged at the top of the glass insulator, and one end of a metal wire penetrates through the glass insulator and is electrically connected with the bottom of the SOI pressure sensitive chip; the SOI pressure sensitive chip is positioned in the oil charging cavity and is contacted with high-temperature silicon oil, a ceramic wafer is arranged between the SOI pressure sensitive chip and the corrugated diaphragm, and a through hole is formed in the middle of the ceramic wafer.
When the SOI pressure sensor is used, when the SOI pressure sensor is subjected to pressure, the pressure is transmitted to the SOI pressure sensitive chip by the corrugated diaphragm through the high-temperature silicon oil, the SOI pressure sensitive chip is subjected to the pressure transmitted by the high-temperature silicon oil, so that the silicon diaphragm of the SOI pressure sensitive chip generates elastic deformation, the resistance is changed due to the stress change on the silicon diaphragm, the Wheatstone bridge is out of balance, a voltage signal which changes along with the resistivity is generated, and the SOI pressure sensitive chip outputs an analog voltage measurement signal which is proportional to the measured pressure through the metal wire under the excitation of voltage or current. The high-temperature silicone oil avoids the direct contact between the SOI pressure sensitive chip and a medium to be detected, and protects the chip; the ceramic chip is used for reducing the volume of the oil charging cavity, the arrangement of the through hole prevents the high-temperature silicon oil transfer pressure from being offset by the ceramic chip, the detection accuracy is improved, and the ceramic chip has better practicability.
The invention adopts SOI chip as material to manufacture pressure sensitive chip, and SiO2The dielectric isolation layer replaces the traditional PN junction isolation, and the insulation isolation mode ensures that no current channel exists between the device and the substrate, thereby avoiding the common latch-up effect in a bulk silicon circuit and improving the reliability of the circuit.
In order to better implement the invention, 4 resistor strips are further formed on the (100) crystal plane of the SOI pressure sensitive chip along the [110] crystal direction and at the maximum stress through strong boron diffusion, and the 4 resistor strips are connected into a Wheatstone bridge.
A layer of SiO is introduced between the substrate and the top layer silicon of the SOI pressure sensitive chip2Forming a dielectric isolation layer on the top silicon edge [110]]A group of resistance strips with approximately equal size are manufactured at the position with the maximum stress of the crystal orientation by using a concentrated boron diffusion process, the resistance strips are interconnected to form a Wheatstone bridge, borosilicate glass is bonded on the front side to form a vacuum cavity, and a pressure sensing film is formed on the back side by adopting deep silicon etching. Using SiO2The dielectric isolation layer replaces the traditional PN junction isolation, and the insulation isolation mode ensures that no current channel exists between the device and the substrate, thereby avoiding the common latch-up effect in a bulk silicon circuit and improving the reliability of the circuit. The SOI pressure sensitive chip is prior art and is not a major improvement of the present invention, and therefore is not described in detail. Said (100) plane and [110]]The crystal orientation is a general term in the art and thus is not described in detail.
In order to better implement the invention, further, a tapered hole is formed in the bottom of the SOI pressure sensitive chip, and the metal wire extends into the tapered hole filled with conductive silver paste to implement electrical connection.
In order to better implement the present invention, further, the bottom of the SOI pressure sensitive chip is provided with 5 tapered holes.
The invention uses the leadless packaging technology to package the SOI chip, the outer lead connecting taper hole is manufactured on the borosilicate glass of the chip by the micromachining method, then the SOI pressure sensitive chip and the glass insulator are sealed together by the glass sintering method, the metal lead is electrically connected with the taper hole by the silver paste sintering method, the temperature can be up to 300 ℃, and the use requirements of various high-temperature pressure measuring systems with the use temperature up to 300 ℃ can be met.
In order to better implement the invention, further, the SOI pressure sensitive chip, the metal wire, the glass insulator and the shell are integrally sintered and molded.
The high-temperature resistant oil-filled SOI pressure sensor is formed by adopting leadless high-temperature sintering, and the pressure sensing base is formed by adopting the SOI silicon piezoresistive sensitive chip, the shell, the glass insulator and the metal wire to sinter, compared with a gold wire lapping packaging mode, the high-temperature resistant oil-filled SOI pressure sensor is small in size, and the size is not more than phi 13mm and 12.5mm in length.
The invention adopts a high vacuum silicone oil filling system (vacuum degree 10)-4Pa), and the system adopts a high-temperature purification and high-vacuum degree filling mode to fill the silicone oil, and the filled high-temperature silicone oil can meet the high-stability use requirement of a wide temperature area of-60-250 ℃ in a sealed environment.
In order to better implement the invention, further, the bottom of the oil-filled cavity is sealed by steel ball welding. The sealing element used at the bottom of the oil filling cavity is hard sealing, and the precision of the steel ball is more than 0.2 mm.
In order to better realize the invention, the pressure ring is welded with the shell, and the ceramic plate is bonded with the oil-filled cavity. The welding connection mode is favorable for improving the connection strength of the sensor; the ceramic chip is bonded with the oil-filled cavity through epoxy glue.
The invention has the beneficial effects that:
(1) the reliability is high: the invention adopts SOI chip as material to manufacture pressure sensitive chip, and SiO2The dielectric isolation layer replaces the traditional PN junction isolation, and the insulation isolation mode ensures that no current channel exists between the device and the substrate, thereby avoiding the common latch-up effect in a bulk silicon circuit and improving the reliability of the circuit.
(2) The use temperature is high: the invention uses the leadless packaging technology to package the SOI chip, the outside lead wire connecting taper hole is made on the borosilicate glass of the chip by the micromachining method, then the SOI pressure sensitive chip and the glass insulator are sealed together by the glass sintering method, the metal wire is electrically connected with the taper hole by the silver paste sintering method, and the high vacuum silicon oil filling system (vacuum degree 10 is used)-4Pa) is filled with high-temperature silicone oil, can resist the temperature of-60 ℃ to 250 ℃, and can meet the use requirements of various high-temperature pressure measurement systems with the use temperature of-55 ℃ to 220 ℃.
(3) The volume is small: the high-temperature resistant oil-filled SOI pressure sensor is formed by adopting leadless high-temperature sintering, and the pressure sensing base is formed by adopting the SOI silicon piezoresistive sensitive chip, the shell, the glass insulator and the metal wire to sinter, compared with a gold wire lapping packaging mode, the high-temperature resistant oil-filled SOI pressure sensor is small in size, and the size is not more than phi 13mm and 12.5mm in length.
Drawings
Fig. 1 is a schematic view of the overall structure of the present invention.
Wherein: 1. pressing a ring; 2. a corrugated diaphragm; 3. a ceramic plate; 4. an oil-filled cavity; 5. an SOI pressure sensitive chip; 6. a glass insulator; 7. steel balls; 8. a housing; 9. a metal wire.
Detailed Description
The embodiments of the present invention will be further described with reference to the accompanying drawings.
Example 1:
the utility model provides a high temperature resistant oil charge SOI pressure sensor, as shown in figure 1, includes casing 8, casing 8's top is provided with clamping ring 1, the inside of clamping ring 1 is provided with corrugated diaphragm 2, and clamping ring 1, corrugated diaphragm 2 and casing 8's upper portion constitutes inclosed oil charge chamber 4, oil charge chamber 4 is 10 through vacuum-4The high-vacuum silicone oil filling system of Pa is used for high-temperature purification and high-vacuum degree high-temperature silicone oil filling; a glass insulator 6 is hermetically arranged inside the shell 8, an SOI pressure sensitive chip 5 is arranged at the top of the glass insulator 6, and one end of a metal wire 9 penetrates through the glass insulator 6 and is electrically connected with the bottom of the SOI pressure sensitive chip 5; the SOI pressure sensitive chip 5 is positioned in the oil charging cavity 4, the SOI pressure sensitive chip 5 is contacted with high-temperature silicon oil, a ceramic plate 3 is arranged between the SOI pressure sensitive chip 5 and the corrugated diaphragm 2, and a through hole is formed in the middle of the ceramic plate 3.
When the pressure sensor is used, when the SOI pressure sensor is stressed, the pressure is transmitted to the SOI pressure sensitive chip 5 through the high-temperature silicon oil by the corrugated diaphragm 2, the SOI pressure sensitive chip 5 is stressed by the pressure transmitted by the high-temperature silicon oil, and the SOI pressure sensitive chip 5 outputs an analog voltage measuring signal proportional to the measured pressure through the metal wire 9 under the excitation of voltage or current. The high-temperature silicone oil avoids the direct contact between the SOI pressure sensitive chip 5 and a medium to be detected, and protects the chip; the ceramic plate 3 is used for reducing the volume of the oil charging cavity 4, the arrangement of the through hole avoids the transmission pressure of high-temperature silicon oil from being offset by the ceramic plate 3, the detection accuracy is improved, and the ceramic plate oil charging device has better practicability.
Example 2:
the embodiment is optimized on the basis of embodiment 1, 4 resistor strips are formed on the crystal plane of the SOI pressure sensitive chip 5 along the crystal direction and at the maximum stress position through concentrated boron diffusion, and the 4 resistor strips are connected into a Wheatstone bridge.
A layer of SiO is introduced between the substrate and the top layer silicon of the SOI pressure sensitive chip 52Forming a medium isolation layer, manufacturing a group of resistance strips with approximately equal size at the maximum position of the compressive stress of the top silicon along the crystal direction by using a concentrated boron diffusion process, interconnecting the resistance strips to form a Wheatstone bridge, bonding borosilicate glass on the front side to form a vacuum cavity, and etching deep silicon on the back side to form a pressure sensing film. The invention uses SiO2The dielectric isolation layer replaces the traditional PN junction isolation, and the insulation isolation mode ensures that no current channel exists between the device and the substrate, thereby avoiding the common latch-up effect in a bulk silicon circuit and improving the reliability of the circuit.
Other parts of this embodiment are the same as embodiment 1, and thus are not described again.
Example 3:
the embodiment is optimized on the basis of embodiment 1 or 2, the bottom of the SOI pressure sensitive chip 5 is provided with a tapered hole, and the metal wire 9 extends into the tapered hole filled with conductive silver paste to realize electrical connection.
Further, the bottom of the SOI pressure sensitive chip 5 is provided with 5 tapered holes.
The invention uses the leadless packaging technology to package the SOI pressure sensitive chip 5, the outer lead connecting taper hole is manufactured on the borosilicate glass of the chip by a micromachining method, then the SOI pressure sensitive chip 5 and the glass insulator 6 are sealed together by a glass sintering method, the metal lead 9 is electrically connected with the taper hole by a silver paste sintering method, the temperature resistance can reach 300 ℃, and the use requirements of various high-temperature pressure measurement systems with the use temperature of 300 ℃ can be met.
The rest of this embodiment is the same as embodiment 1 or 2, and therefore, the description thereof is omitted.
Example 4:
in this embodiment, the optimization is performed based on embodiment 1, and as shown in fig. 1, the SOI pressure sensitive chip 5, the metal wire 9, the glass insulator 6, and the housing 8 are integrally formed by sintering.
The high-temperature resistant oil-filled SOI pressure sensor is formed by adopting leadless high-temperature sintering, the pressure sensing base is formed by adopting an SOI silicon piezoresistive sensitive chip, a shell 8, a glass insulator 6 and a metal wire 9 through sintering, and compared with a gold wire lapping packaging mode, the high-temperature resistant oil-filled SOI pressure sensor is small in size, and the size is not more than 13mm in diameter and 12.5mm in length.
Other parts of this embodiment are the same as those of embodiment 1, and thus are not described again.
Example 5:
the embodiment is optimized on the basis of embodiment 1, and a high-vacuum silicone oil filling system (vacuum degree of 10)- 4Pa), and the system adopts a high-temperature purification and high-vacuum degree filling mode to fill the silicone oil, the filled high-temperature silicone oil can meet the high-stability use requirement of a wide temperature range of-60-250 ℃ in a sealed environment, and the bottom of the oil-filled cavity 4 is welded and sealed by using steel balls 7. The sealing element used at the bottom of the oil filling cavity 4 is hard sealing, and the precision of the steel ball 7 is more than 0.2 mm.
Furthermore, the pressure ring 1 is welded with the shell 8, and the ceramic plate 3 is bonded with the oil-filled cavity 4. The welding connection mode is favorable for improving the connection strength of the sensor; the ceramic plate 3 is bonded with the oil-filled cavity 4 through epoxy glue.
Other parts of this embodiment are the same as those of embodiment 1, and thus are not described again.
Example 6:
a high temperature resistant oil filled SOI pressure sensor, as shown in fig. 1, comprising: the SOI pressure sensitive chip 5 is processed by MEMS technology, and the bottom of the SOI pressure sensitive chip is provided with a taper hole for aligning and fixing with the metal lead 9. The metal wire 9 penetrates through the glass insulator 6 and extends into the conical hole filled with the conductive silver paste. And the glass insulator 6 fixed below the SOI pressure sensitive chip 5 and the shell 8 are integrally sintered at high temperature to form a base bearing the measured pressure. The top of shell 8 has welded clamping ring 1 and ripple diaphragm 2 in proper order to form inclosed oil-filled chamber 4, use the epoxy glue to fix ceramic wafer 3 in oil-filled chamber 4, in order to reduce oil-filled chamber 4 volume, it has high temperature silicone oil to fill in the oil-filled chamber 4, and oil-filled chamber 4 uses steel ball 7 welding seal.
A layer of SiO is introduced between the substrate and the top layer of silicon of the SOISOI pressure sensitive chip 52Forming a medium isolation layer, manufacturing a group of resistance strips with approximately equal size at the maximum position of the compressive stress of the top silicon along the crystal direction by using a concentrated boron diffusion process, interconnecting the resistance strips to form a Wheatstone bridge, bonding borosilicate glass on the front side to form a vacuum cavity, and etching deep silicon on the back side to form a pressure sensing film. When the SOI pressure sensor is under pressure, the pressure is transmitted to the SOI pressure sensitive chip 5 by the corrugated diaphragm 2 through the high-temperature silicon oil, the pressure sensitive film is elastically deformed due to the pressure transmitted by the high-temperature silicon oil on the SOI pressure sensitive chip 5, the resistance is changed due to the stress change on the pressure sensitive film, the Wheatstone bridge is out of balance, a voltage signal which is changed along with the resistivity is generated, and an analog voltage measurement signal which is proportional to the measured pressure is output by the SOI pressure sensitive chip 5 through the metal wire 9 under the excitation of voltage or current.
According to the invention, the direct contact between the SOI pressure sensitive chip 5 and a medium to be detected is avoided through the high-temperature silicone oil, so that the chip is protected; the ceramic plate 3 is used for reducing the volume of the oil-filled cavity 4, and the arrangement of the through hole prevents the high-temperature silicone oil transfer pressure from being offset by the ceramic plate 3, so that the detection accuracy is improved. The invention realizes the pressure measurement in the high-temperature environment, and has the characteristics of good dynamic property, high temperature resistance (220 ℃) and high precision, thereby having better practicability.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and all simple modifications and equivalent variations of the above embodiments according to the technical spirit of the present invention are included in the scope of the present invention.
Claims (7)
1. The high-temperature-resistant oil-filled SOI pressure sensor is characterized by comprising a shell (8), wherein a pressure ring (1) is arranged at the top of the shell (8), and the pressure ring (1) isThe corrugated diaphragm (2) is arranged inside the oil-filled sealing ring, the upper parts of the pressure ring (1), the corrugated diaphragm (2) and the shell (8) form a closed oil-filled cavity (4), and the oil-filled cavity (4) is 10 degrees of vacuum-4The high-vacuum silicone oil filling system of Pa is used for high-temperature purification and high-vacuum degree high-temperature silicone oil filling; a glass insulator (6) is hermetically arranged inside the shell (8), an SOI pressure sensitive chip (5) is arranged at the top of the glass insulator (6), and one end of a metal wire (9) penetrates through the glass insulator (6) and is electrically connected with the bottom of the SOI pressure sensitive chip (5); the SOI pressure sensitive chip (5) is positioned in the oil filling cavity (4), the SOI pressure sensitive chip (5) is contacted with high-temperature silicon oil, a ceramic wafer (3) is arranged between the SOI pressure sensitive chip (5) and the corrugated diaphragm (2), and a through hole is formed in the middle of the ceramic wafer (3).
2. The SOI pressure sensor as claimed in claim 1, wherein 4 resistor strips are formed on the crystal face of the SOI pressure sensitive chip (5) along the crystal direction and at the maximum stress by strong boron diffusion, and the 4 resistor strips are connected into a Wheatstone bridge.
3. The high-temperature-resistant oil-filled SOI pressure sensor according to claim 2, wherein a tapered hole is formed at the bottom of the SOI pressure sensitive chip (5), and the metal lead (9) extends into the tapered hole filled with conductive silver paste to realize electrical connection.
4. A high temperature resistant oil-filled SOI pressure sensor according to claim 3, characterized in that the bottom of the SOI pressure sensitive chip (5) is provided with 5 tapered holes.
5. The high temperature-resistant oil-filled SOI pressure sensor according to any one of claims 1 to 4, wherein the SOI pressure-sensitive chip (5), the metal wire (9), the glass insulator (6) and the housing (8) are integrally sintered and molded.
6. The SOI pressure sensor as claimed in claim 1, wherein the bottom of the oil-filled cavity (4) is welded and sealed by steel balls (7).
7. The SOI pressure sensor according to claim 1, wherein the pressure ring (1) is welded to the housing (8), and the ceramic plate (3) is bonded to the oil-filled cavity (4).
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| CN202110693944.1A CN113624368A (en) | 2021-06-22 | 2021-06-22 | High-temperature-resistant oil-filled SOI pressure sensor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116296035A (en) * | 2022-12-28 | 2023-06-23 | 西安中星测控有限公司 | MCS absolute pressure and sealing gauge pressure sensor and manufacturing method thereof |
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| CN107806947A (en) * | 2017-11-09 | 2018-03-16 | 中国电子科技集团公司第四十九研究所 | High temperature pressure temperature one compound sensor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116296035A (en) * | 2022-12-28 | 2023-06-23 | 西安中星测控有限公司 | MCS absolute pressure and sealing gauge pressure sensor and manufacturing method thereof |
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