CN113540733A - Vertical switching structure - Google Patents
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- CN113540733A CN113540733A CN202110825834.6A CN202110825834A CN113540733A CN 113540733 A CN113540733 A CN 113540733A CN 202110825834 A CN202110825834 A CN 202110825834A CN 113540733 A CN113540733 A CN 113540733A
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Abstract
本发明公开了一种垂直转接结构。该垂直转接结构包括：第一上层金属层、第一介质层、第一下层金属层以及位于第一介质层中的信号金属通孔和接地金属通孔。信号金属通孔，为一直径不均匀的金属通孔，一端用于在第一上层金属层与共面波导的信号线垂直连接，另一端用于在第一介质层与基片集成同轴线的信号线垂直连接；所述直径不均匀的金属通孔用于实现基片集成同轴线与共面波导之间的阻抗匹配。接地金属通孔的数量为多个，多个接地金属通孔环绕信号金属通孔设置，每一接地金属通孔的一端与第一上层金属层连接，另一端与第一下层金属层连接。本发明提供的垂直转接结构能够实现基片集成同轴线与共面波导之间的阻抗匹配。
The invention discloses a vertical transfer structure. The vertical transfer structure includes: a first upper metal layer, a first dielectric layer, a first lower metal layer, and signal metal through holes and ground metal through holes in the first dielectric layer. The signal metal through hole is a metal through hole with a non-uniform diameter, one end is used to vertically connect the signal line of the coplanar waveguide in the first upper metal layer, and the other end is used to integrate the coaxial line between the first dielectric layer and the substrate. The signal lines are connected vertically; the metal through holes with uneven diameters are used to realize impedance matching between the substrate-integrated coaxial line and the coplanar waveguide. The number of ground metal through holes is multiple, the plurality of ground metal through holes are arranged around the signal metal through holes, one end of each ground metal through hole is connected to the first upper metal layer, and the other end is connected to the first lower metal layer. The vertical transfer structure provided by the invention can realize impedance matching between the substrate-integrated coaxial line and the coplanar waveguide.
Description
Technical Field
The invention relates to the technical field of microwave circuits, in particular to a vertical switching structure.
Background
With the development of integrated circuits, interconnect switching technology has been widely focused. The substrate integrated coaxial line is used in a passive circuit due to the characteristics of good electromagnetic interference shielding performance and no dispersion, but the signal line of the substrate integrated coaxial line is positioned in a medium and cannot be directly connected with a surface circuit. Coplanar waveguides are widely used in surface circuits due to their low loss and low dispersion. Therefore, for high performance integration of passive circuits with surface circuits, a low reflection performance transition structure from a substrate integrated coaxial line to a coplanar waveguide is required.
For the situation that the signal line of the substrate integrated coaxial line and the signal line of the coplanar waveguide are not in the same horizontal position, the traditional vertical switching method is to design the coplanar waveguide on the upper ground plane of the substrate integrated coaxial line and then connect the signal line of the substrate integrated coaxial line and the signal line of the coplanar waveguide on the top layer through a uniform through hole. However, based on this switching method, there is a large impedance discontinuity between the substrate integrated coaxial line and the coplanar waveguide, and it is difficult to achieve the low reflection characteristic of the switching structure.
Disclosure of Invention
The invention aims to provide a vertical switching structure capable of realizing impedance matching between a substrate integrated coaxial line and a coplanar waveguide.
In order to achieve the purpose, the invention provides the following scheme:
a vertical transition structure, comprising: the first upper metal layer, the first dielectric layer, the first lower metal layer, the signal metal through hole and the grounding metal through hole; the first dielectric layer is positioned between the first upper metal layer and the first lower metal layer;
the signal metal through hole is a metal through hole with uneven diameter, is positioned in the first dielectric layer, one end of the signal metal through hole is used for being vertically connected with a signal line of the coplanar waveguide on the first upper metal layer, and the other end of the signal metal through hole is used for being vertically connected with a signal line of the substrate integrated coaxial line on the first dielectric layer; the metal through holes with uneven diameters are used for realizing impedance matching between the substrate integrated coaxial line and the coplanar waveguide;
the grounding metal through holes are positioned in the first dielectric layer, and the number of the grounding metal through holes is multiple; the plurality of grounding metal through holes are arranged around the signal metal through holes, one end of each grounding metal through hole is connected with the first upper-layer metal layer, and the other end of each grounding metal through hole is connected with the first lower-layer metal layer.
Optionally, the signal metal via includes a plurality of metal via segments in a length direction, and diameters of adjacent metal via segments are different, so as to implement impedance matching between the substrate integrated coaxial line and the coplanar waveguide.
Optionally, the plurality of ground metal vias are distributed in a ring shape, and the center of the formed ring shape is the position of the signal metal via.
Optionally, the diameters of the ground metal vias are equal.
Optionally, the method further includes: and one end of the first connecting line is vertically connected with one end of the signal metal through hole, and the other end of the first connecting line is used for being connected with the signal line of the coplanar waveguide.
Optionally, the method further includes: and one end of the second connecting wire is vertically connected with the other end of the signal metal through hole, and the other end of the second connecting wire is used for being connected with a signal wire of the substrate integrated coaxial wire.
According to the specific embodiment provided by the invention, the following technical effects are disclosed: the vertical switching structure provided by the embodiment of the invention comprises a first upper metal layer, a first dielectric layer, a first lower metal layer, a signal metal through hole and a plurality of grounding metal through holes, wherein the signal metal through hole and the plurality of grounding metal through holes are positioned in the first dielectric layer, the signal metal through holes are metal through holes with uneven diameters, one end of each metal through hole is used for being vertically connected with a signal line of a coplanar waveguide on the first upper metal layer, and the other end of each metal through hole is used for being vertically connected with a signal line of an integrated coaxial line of a substrate on the first dielectric layer. One end of each grounding metal through hole is connected with the first upper-layer metal layer, the other end of each grounding metal through hole is connected with the first lower-layer metal layer, and the plurality of grounding metal through holes are arranged around the signal metal through holes.
The uneven diameter of the metal through hole is arranged for realizing the impedance matching between the substrate integrated coaxial line and the coplanar waveguide, compared with the metal through hole with the uniform diameter in the prior art, the impedance matching between the substrate integrated coaxial line and the coplanar waveguide connected with the substrate integrated coaxial line can be realized through the design of the diameters of the signal metal through hole, and the continuity of the impedance between the substrate integrated coaxial line and the coplanar waveguide is ensured.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings without inventive exercise.
Fig. 1 is a schematic structural diagram of a vertical transition structure according to an embodiment of the present invention;
fig. 2(a) is a front view of a vertical transition structure according to an embodiment of the present invention, fig. 2(b) is a side view of the vertical transition structure according to the embodiment of the present invention, and fig. 2(c) is a top view of the vertical transition structure according to the embodiment of the present invention;
FIG. 3 is a diagram illustrating electric field distribution at different locations of a vertical via structure according to an embodiment of the present invention;
FIG. 4 shows the return loss S of the vertical via structure in the embodiment of the present invention11And transmission loss S21The effect diagram of (1).
1. Grounding the metal through hole at the coplanar waveguide; 2. a signal line of the coplanar waveguide; 3. a third upper metal layer; 4. a first upper metal layer; 5. an upper dielectric layer; 6. an intermediate metal layer; 7. a lower dielectric layer; 8. a third lower metal layer; 9. a signal metal via; 10. a first lower metal layer; 11. an internal circuit portion; 12. a second lower metal layer; 13. the substrate integrates a signal line of a coaxial line; 14. grounding the metal through hole at the substrate integrated coaxial line; 15. a second upper metal layer; 16. a ground metal via; 17. a vertical transfer structure; 18. a surface circuit portion.
Detailed Description
In the embodiments of the present application, terms such as "first" and "second" are used to distinguish the same or similar items having substantially the same function and action. For example, the first wireless communication module and the second wireless communication module are only used for distinguishing different wireless communication modules, and the sequence order thereof is not limited. Those skilled in the art will appreciate that the words "first," "second," and the like do not limit the number or order of execution.
It is noted that, in the present application, words such as "exemplary" or "for example" are used to mean exemplary, illustrative, or descriptive. Any embodiment or design described herein as "exemplary" or "e.g.," is not necessarily to be construed as preferred or advantageous over other embodiments or designs. Rather, use of the word "exemplary" or "such as" is intended to present concepts related in a concrete fashion.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention aims to provide a vertical switching structure capable of realizing impedance matching between an integrated coaxial line and a coplanar waveguide.
Referring to fig. 1, the vertical transition structure 17 provided in this embodiment includes: a first upper metal layer 4, a first dielectric layer, a first lower metal layer 10, a signal metal via 9, and a ground metal via 16. The first dielectric layer is located between the first upper metal layer 4 and the first lower metal layer 10.
The signal metal through hole 9 is a metal through hole with a non-uniform diameter, is positioned in the first dielectric layer, and one end of the signal metal through hole is used for being vertically connected with the signal line 2 of the coplanar waveguide on the first upper metal layer 4, and the other end of the signal metal through hole is used for being vertically connected with the signal line 13 of the substrate integrated coaxial line on the first dielectric layer. The metal through holes with uneven diameters can be exemplified by vertical step gradient through holes.
The non-uniform diameter of the signal metal via 9 is set to achieve impedance matching between the substrate integrated coaxial line and the coplanar waveguide. Specifically, the arrangement mode and the diameter size of the uneven diameter can be found through experiments. Wherein, the setting mode of the uneven diameter can be as follows: the diameters of the segments in the length direction of the signal metal through holes are different. For example, the signal metal through hole is divided into at least two sections in the length direction, the diameters of the two adjacent sections of metal through hole sections are different, and the determination of the diameters is based on the principle of impedance matching between the substrate integrated coaxial line and the coplanar waveguide. Through setting up the signal hole of inhomogeneous diameter, the vertical switching structure self produces discontinuity because the size is inhomogeneous, through setting up suitable size, can be used for compensating or offsetting the integrated coaxial line of substrate to the discontinuity that the coplanar waveguide transmission in-process produced, realizes impedance match, and then reaches the low reflection transmission of electromagnetic wave signal.
The grounding metal through holes 16 are positioned in the first dielectric layer, and the number of the grounding metal through holes is multiple.
A plurality of ground metal vias 16 are disposed around the signal metal vias 9, one end of each ground metal via 16 is connected to the first upper metal layer 4, and the other end is connected to the first lower metal layer 10 (i.e., one end of each ground metal via 16 is open to the first upper metal layer 4, and the other end is open to the first lower metal layer 10), and is not in contact with the signal line of the substrate integrated coaxial line and the signal line of the coplanar waveguide.
In one example, the ground metal vias 16 are distributed around the signal metal vias 9 in a ring shape, and the center of the ring shape is where the signal metal vias 9 are located. The distribution of the ground metal vias 16 is not limited to the annular distribution, and may be in other forms around the signal metal vias 9.
In one example, the diameters of the ground metal vias 16 are equal.
Referring to fig. 1, the vertical transition structure 17 further includes: a first connection line located in the first upper metal layer 4 and a second connection line located in the first dielectric layer. One end of the first connecting line is vertically connected with one end of the signal metal through hole 9, and the other end of the first connecting line is used for being connected with the signal line 2 of the coplanar waveguide. One end of the second connecting line is vertically connected with the other end of the signal metal through hole 9, and the other end of the second connecting line is used for being connected with a signal line 13 of the substrate integrated coaxial line.
The above-described vertical transition structure 17 is applied to a microwave circuit, see fig. 1, which includes: an internal circuit portion 11 (left side in fig. 1) and a surface circuit portion 18 (right side in fig. 1), the vertical relay structure 17 being located between the internal circuit portion 11 and the surface circuit portion 18;
the internal circuit portion 11 includes: the second upper metal layer 15, the second dielectric layer and the second lower metal layer 12, the second dielectric layer is provided with a substrate integrated coaxial line, the second upper metal layer 15 and the first upper metal layer 4 are positioned on the same plane, and the second lower metal layer 12 and the first lower metal layer 10 are positioned on the same plane.
The surface circuit layer portion 18 includes: a third upper metal layer 3, a third dielectric layer and a third lower metal layer 8, wherein the third upper metal layer 3 and the first upper metal layer 4 are positioned on the same plane, and the third lower metal layer 8 and the first lower metal layer 12 are positioned on the same plane; the third upper metal layer 3 is provided with a coplanar waveguide.
In one example, the microwave circuit further comprises: and the middle metal layer 6 is positioned in the third dielectric layer, and the middle metal layer 6 and the substrate integrated coaxial line are positioned on the same plane.
The vertical transfer structure is described in detail below:
as shown in fig. 1 and 2, the first upper metal layer 4, the second upper metal layer 15, and the third upper metal layer 3 are the same metal layer, the first lower metal layer 10, the second lower metal layer 12, and the third lower metal layer 8 are the same metal layer, and the first dielectric layer, the second dielectric layer, and the third dielectric layer are the same dielectric layer. The middle metal layer 6 divides the first dielectric layer and the third dielectric layer into an upper dielectric layer 5 and a lower dielectric layer 7, and the middle metal layer 6 and the signal line 13 of the substrate integrated coaxial line are positioned on the same plane.
The signal metal through hole 9 is divided into two sections in the length direction and is a vertical step gradual change through hole. The height of the signal metal through hole 9 is h1+h2The diameter of the metal through hole section of the upper section is d1Height of h1The diameter of the metal through hole section of the lower section is d2Height of h2Metal via section of the upper section andthe signal lines of the coplanar waveguide are vertically connected, and the metal through hole section at the lower section is vertically connected with the signal line of the substrate integrated coaxial line. By designing the combination of the signal metal through hole sections with different diameters, the impedance matching between the substrate integrated coaxial line and the coplanar waveguide connected with the signal metal through hole sections can be realized.
In the first dielectric layer of the vertical transition structure 17, the signal metal via is located in the upper dielectric layer of the first dielectric layer, the grounding metal via penetrates through the first dielectric layer and is connected with the first upper metal layer 4 and the first lower metal layer 10, and is not contacted with the signal line of the substrate integrated coaxial line and the signal line of the coplanar waveguide, and the diameter of the grounding metal via 16 is d3The height of the grounding metal via 16 is h3Taking the surrounding manner of the ground metal via 16 surrounding the signal metal via as an example, the distance between the center of the ground metal via 16 and the center 9 of the signal hole is equal to l.
The signal line of the coplanar waveguide has a width w1The width of the gap between the signal line and the upper ground plane is g. The width of the signal line of the substrate integrated coaxial line is w2. The diameters of the grounding metal through hole 14 at the substrate integrated coaxial line and the grounding metal through hole 1 at the coplanar waveguide are equal and are d4The distance between the grounding metal through holes 14 at the substrate integrated coaxial line is equal to the distance between the grounding metal through holes 1 at the coplanar waveguide, and the distances are w3。
The effect of the vertical via structure provided by the present application is described by taking the via structure of the present invention processed by the PCB process as an example. The dielectric layer is made of Rogers RT/duroid 5880 material (dielectric constant is 2.2, dielectric loss tangent is 0.0009) and has a thickness of 0.254 mm. The thickness of each metal layer was 0.018 mm. h is1＝0.127mm，h2＝0.127mm，h3＝0.526mm，d1＝0.94mm，d2＝0.3mm，d3＝d4＝0.6mm，w1＝0.6mm，w2＝0.43mm，w3＝3mm，l＝2.82mm，g＝0.1mm。
Fig. 3 is a cross-sectional electric field diagram of the vertical via structure at different positions. As can be seen from fig. 3, the electric field of the substrate integrated coaxial line is mainly concentrated in the middle, and when passing through the signal metal through holes with uneven diameters, the electric field is gradually distributed to both sides and then concentrated in the middle, and finally the transmission is transited to the coplanar waveguide.
FIG. 4 shows the return loss S of the vertical via structure11And transmission loss S21The results are shown in the figure. From DC to 50GHz, S21Can reach more than-0.25 dB, S11Less than-20 dB can be achieved.
As can be seen from fig. 3 and 4, the vertical switching structure provided by the present application has the characteristics of low reflection, simple structure, easy integration, and the like, and has a wide application prospect in the microwave band.
The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.
The principles and embodiments of the present invention have been described herein using specific examples, which are provided only to help understand the method and the core concept of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, the specific embodiments and the application range may be changed. In view of the above, the present disclosure should not be construed as limiting the invention.
Claims (6)
1. A vertical transition structure, comprising: the first upper metal layer, the first dielectric layer, the first lower metal layer, the signal metal through hole and the grounding metal through hole; the first dielectric layer is positioned between the first upper metal layer and the first lower metal layer;
the signal metal through hole is a metal through hole with uneven diameter, is positioned in the first dielectric layer, one end of the signal metal through hole is used for being vertically connected with a signal line of the coplanar waveguide on the first upper metal layer, and the other end of the signal metal through hole is used for being vertically connected with a signal line of the substrate integrated coaxial line on the first dielectric layer; the uneven diameter of the signal metal through hole is set for realizing impedance matching between the substrate integrated coaxial line and the coplanar waveguide;
the grounding metal through holes are positioned in the first dielectric layer, and the number of the grounding metal through holes is multiple; the plurality of grounding metal through holes are arranged around the signal metal through holes, one end of each grounding metal through hole is connected with the first upper-layer metal layer, and the other end of each grounding metal through hole is connected with the first lower-layer metal layer.
2. The vertical via structure of claim 1, wherein the signal metal via comprises a plurality of metal via segments in a length direction, and diameters of adjacent metal via segments are different to achieve impedance matching between the substrate-integrated coaxial line and the coplanar waveguide.
3. The vertical via structure of claim 1, wherein the plurality of ground metal vias are distributed in a ring shape, and a center of the ring shape is a location of the signal metal via.
4. The vertical via of claim 1 or 3, wherein the ground metal vias are of equal diameter.
5. The vertical transition structure of claim 1, further comprising: and one end of the first connecting line is vertically connected with one end of the signal metal through hole, and the other end of the first connecting line is used for being connected with the signal line of the coplanar waveguide.
6. The vertical transition structure of claim 1, further comprising: and one end of the second connecting wire is vertically connected with the other end of the signal metal through hole, and the other end of the second connecting wire is used for being connected with a signal wire of the substrate integrated coaxial wire.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116979255A (en) * | 2023-09-22 | 2023-10-31 | 浪潮(山东)计算机科技有限公司 | Grounding structure and signal device |
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