CN113540368A - Composite material, preparation method thereof and quantum dot light-emitting diode - Google Patents
Composite material, preparation method thereof and quantum dot light-emitting diode Download PDFInfo
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- CN113540368A CN113540368A CN202010311919.8A CN202010311919A CN113540368A CN 113540368 A CN113540368 A CN 113540368A CN 202010311919 A CN202010311919 A CN 202010311919A CN 113540368 A CN113540368 A CN 113540368A
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- 239000002131 composite material Substances 0.000 title claims abstract description 59
- 238000002360 preparation method Methods 0.000 title claims abstract description 24
- 230000005525 hole transport Effects 0.000 claims abstract description 134
- 239000000463 material Substances 0.000 claims abstract description 86
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 41
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 claims abstract description 41
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- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 claims description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 4
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 4
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- 239000007924 injection Substances 0.000 abstract description 35
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- 239000010408 film Substances 0.000 description 7
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- 229910000861 Mg alloy Inorganic materials 0.000 description 2
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- 238000000137 annealing Methods 0.000 description 1
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- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
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- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- ATGUVEKSASEFFO-UHFFFAOYSA-N p-aminodiphenylamine Chemical compound C1=CC(N)=CC=C1NC1=CC=CC=C1 ATGUVEKSASEFFO-UHFFFAOYSA-N 0.000 description 1
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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Abstract
The invention belongs to the technical field of nano materials, and particularly relates to a composite material, a preparation method thereof and a quantum dot light-emitting diode. The composite material comprises a hole transport material and tellurium nanosheets dispersed among the hole transport material. The tellurium nanosheets are doped into the hole transport material, so that the hole transport rate of the hole transport material can be remarkably improved, and therefore, the composite material is used for a hole transport layer of a quantum dot light-emitting diode, the hole conductivity of the hole transport layer can be improved, the charge injection of a quantum dot light-emitting diode device is balanced, and finally the brightness, the light-emitting efficiency and the service life of the device are improved.
Description
Technical Field
The invention belongs to the technical field of nano materials, and particularly relates to a composite material, a preparation method thereof and a quantum dot light-emitting diode.
Background
The quantum dot-based light emitting technology has the characteristics of high brightness, high color gamut, low starting voltage, high stability and the like, and becomes the best candidate for the next generation display technology. The quantum dot light emitting diode (QLED) device can be prepared by a spin-coating method, is low in cost, is very thin, can be made into a flexible display device, even a flexible and transparent device, and has wide application prospect.
At present, a QLED device is generally a multi-layer sandwich structure, and for example, is composed of an anode, a hole injection layer, a hole transport layer, a quantum dot light emitting layer, an electron transport layer, and a cathode. The hole transport layer in the QLED device is a main factor restricting the performance of the device, and the QLED device mainly refers to the preparation experience of the OLED device, but the organic hole transport layer material matched with the OLED device is not matched with the quantum dots, so that the hole injection efficiency is low, the performance of the QLED device is seriously influenced, and the QLED device is difficult to meet the requirement of practical application.
Therefore, the prior art is in need of improvement.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, provides a composite material, a preparation method thereof and a quantum dot light-emitting diode, and aims to solve the technical problem of low hole transmission rate of the conventional hole transmission material.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a composite material which comprises hole transport materials and tellurium nano sheets dispersed among the hole transport materials.
The composite material provided by the invention comprises a hole transport material and tellurium nanosheets dispersed among the hole transport material, wherein the nanoscale tellurium nanosheets have high hole conductivity and strong local surface plasmon resonance effect, so that the hole transport rate of the hole transport material can be obviously improved by doping the tellurium nanosheets into the hole transport material. The composite material is used for a hole transport layer of a quantum dot light-emitting diode, so that the hole conductivity of the hole transport layer can be improved, the charge injection of a quantum dot light-emitting diode device is balanced, and finally the brightness, the light-emitting efficiency and the service life of the device are improved.
The invention also provides a preparation method of the composite material, which comprises the following steps:
providing a hole transport material and tellurium nanosheets;
dissolving the hole transport material and the tellurium nanosheets in a solvent to obtain a mixed solution;
and drying the mixed solution to obtain the composite material.
The preparation method of the composite material provided by the invention comprises the steps of dissolving a hole transport material and tellurium nanosheets in a solvent, and drying to remove the solvent to obtain the composite material, wherein the composite material comprises the hole transport material and the tellurium nanosheets dispersed among the hole transport material; the preparation method is simple in process and low in cost, and the finally obtained composite material is used for a hole transport layer of a quantum dot light-emitting diode, so that the hole conductivity of the hole transport layer can be improved, the charge injection of a quantum dot light-emitting diode device is balanced, the brightness and the light-emitting efficiency of the device are improved, and the service life of the device is prolonged.
The invention provides a light-emitting diode which comprises an anode, a cathode and a quantum dot light-emitting layer positioned between the anode and the cathode, wherein a hole transport layer is arranged between the anode and the quantum dot light-emitting layer, and the hole transport layer is composed of the composite material or the composite material prepared by the preparation method of the composite material.
In the light-emitting diode provided by the invention, the hole transport layer is composed of the special composite material or the special composite material prepared by the preparation method provided by the invention, and the composite material has good hole transport performance, can promote the effective recombination of electrons and holes in the quantum dot light-emitting layer, and reduces the influence of charge accumulation on the device performance, thereby improving the light-emitting efficiency and the display performance of the device.
Drawings
FIG. 1 is a schematic flow chart of a method of preparing a composite material according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a quantum dot light-emitting diode according to an embodiment of the invention.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
In one aspect, embodiments of the present invention provide that the composite material includes hole transport materials and tellurium nanosheets dispersed among the hole transport materials.
The composite material provided by the embodiment of the invention comprises a hole transport material and tellurium nanosheets dispersed among the hole transport material, wherein the nanoscale tellurium nanosheets have high hole conductivity and strong local surface plasmon resonance effect, so that the hole transport rate of the hole transport material can be obviously improved by doping the tellurium nanosheets into the hole transport material. When the composite material provided by the embodiment of the invention is used for a hole transport layer of a quantum dot light-emitting diode, the hole conductivity of the hole transport layer can be improved, the charge injection of a quantum dot light-emitting diode device is balanced, and finally the brightness, the light-emitting efficiency and the service life of the device are improved.
In one embodiment, the hole transport material is selected from an inorganic hole transport material or an organic hole transport material. The hole transport material is a nano material, specifically, the inorganic hole transport material is nano particles of inorganic metal oxide, such as metal oxide nano particles of the inorganic hole transport material selected from nickel oxide (NiO), molybdenum trioxide (MoO)3) And tungsten trioxide (WO)3) At least one of (1). The organic hole transport material is a high molecular organic polymer, and the organic hole transport material is selected from at least one of poly (9, 9-dioctylfluorene-CO-N- (4-butylphenyl) diphenylamine) (TFB), Polyvinylcarbazole (PVK) and poly (9, 9-dioctylfluorene-CO-bis-N, N-phenyl-1, 4-Phenylenediamine) (PFB).
In one embodiment, the composite material consists of the hole transport material and the tellurium nanoplates. Further, the mass ratio of the tellurium nanosheets to the hole transport material is (0.5-5): 100, namely, per 100 parts of the hole transport material, 0.5-5 parts of tellurium nanosheets, and the doping effect of the tellurium nanosheets is better within the mass range
On the other hand, the embodiment of the present invention further provides a preparation method of a composite material, as shown in fig. 1, the preparation method of the composite material includes the following steps:
s01: providing a hole transport material and tellurium nanosheets;
s02: dissolving the hole transport material and the tellurium nanosheets in a solvent to obtain a mixed solution;
s03: and drying the mixed solution to obtain the composite material.
The preparation method of the composite material provided by the embodiment of the invention comprises the steps of dissolving a hole transport material and tellurium nanosheets in a solvent, and drying to remove the solvent to obtain the composite material, wherein the composite material comprises the hole transport material and the tellurium nanosheets dispersed among the hole transport material; the preparation method is simple in process and low in cost, and the finally obtained composite material is used for a hole transport layer of a quantum dot light-emitting diode, so that the hole conductivity of the hole transport layer can be improved, the charge injection of a quantum dot light-emitting diode device is balanced, the brightness and the light-emitting efficiency of the device are improved, and the service life of the device is prolonged.
The composite material provided by the invention comprises a hole transport material and tellurium nanosheets dispersed among the hole transport material; the composite material is obtained by the preparation method.
In step S01, the specific selection of the hole transport material is as described above and will not be described in detail herein.
In step S02, in the step of dissolving the hole transport material and the tellurium nanosheets in the solvent, the mass ratio of the tellurium nanosheets to the hole transport material is 0.5-5:100, that is, the hole transport material and the tellurium nanosheets are dissolved in the solvent according to the mass ratio of the tellurium nanosheets to the hole transport material of 0.5-5:100, and the doping effect of the tellurium nanosheets is better in the range of the mass fraction. Further, the solvent is at least one selected from the group consisting of ethanol, chlorobenzene, acetonitrile, isopropanol, toluene, and tetrahydrofuran. And in the finally obtained mixed solution, the concentration of the hole transport material is 8-40 mg/mL. If the hole transport material is an inorganic hole transport material, the corresponding concentration can be 20-40 mg/mL; if the hole transport material is an organic hole transport material, the corresponding concentration range may be 8-10 mg/mL. Within the concentration range, the hole transport material has better dispersion effect, and a hole transport layer thin film with the thickness of 20-40nm can be correspondingly obtained after film formation.
In step S03, in the step of drying treatment, the temperature is 100 ℃ and 180 ℃, and the time is 20-40 minutes; under the condition, the solvent can be well volatilized, and the composite material without the solvent is obtained. Further, before the drying treatment, the method also comprises the step of depositing the mixed solution on a substrate; the mixed solution is deposited on a substrate and dried to obtain a thin film layer of a composite material, and the thin film of the composite material can be used as a hole transport layer of a quantum dot light-emitting diode.
The embodiment of the invention provides a light-emitting diode, which comprises an anode, a cathode and a quantum dot light-emitting layer positioned between the anode and the cathode, wherein a hole transport layer is arranged between the anode and the quantum dot light-emitting layer, and the hole transport layer is composed of a composite material or a composite material prepared by the preparation method of the composite material.
In the light-emitting diode provided by the embodiment of the invention, the hole transport layer is made of the special composite material or the special composite material prepared by the preparation method provided by the embodiment of the invention, and the composite material has good hole transport performance, can promote the effective recombination of electrons and holes in the quantum dot light-emitting layer, and reduces the influence of charge accumulation on the device performance, thereby improving the light-emitting efficiency and the display performance of the device.
In one embodiment, a hole injection layer is further disposed between the hole transport layer and the anode. In another embodiment, an electron functional layer, such as an electron transport layer, or a stack of an electron injection layer and an electron transport layer, is disposed between the quantum dot light emitting layer and the cathode, wherein the electron injection layer is adjacent to the cathode.
The quantum dot light-emitting diode provided by the embodiment of the invention comprises an upright structure and an inverted structure.
In one embodiment, the front-mounted quantum dot light emitting diode comprises a laminated structure of an anode and a cathode which are oppositely arranged, a quantum dot light emitting layer arranged between the anode and the cathode, a hole transport layer arranged between the anode and the quantum dot light emitting layer, and the anode is arranged on a substrate. Further, a hole function layer such as a hole injection layer and an electron blocking layer can be arranged between the anode and the quantum dot light-emitting layer; an electron-transport layer, an electron-injection layer, a hole-blocking layer and other electron-functional layers can be arranged between the cathode and the quantum dot light-emitting layer. In some embodiments of the front structure device, the quantum dot light emitting diode includes a substrate, an anode disposed on a surface of the substrate, a hole injection layer disposed on a surface of the anode, a hole transport layer disposed on a surface of the hole injection layer, a quantum dot light emitting layer disposed on a surface of the hole transport layer, an electron transport layer disposed on a surface of the quantum dot light emitting layer, and a cathode disposed on a surface of the electron transport layer.
In one embodiment, an inverted structure quantum dot light emitting diode includes a stacked structure of an anode and a cathode disposed opposite each other, a quantum dot light emitting layer disposed between the anode and the cathode, a hole transport layer disposed between the anode and the quantum dot light emitting layer, and the cathode disposed on a substrate. Further, a hole function layer such as a hole injection layer and an electron blocking layer can be arranged between the anode and the quantum dot light-emitting layer; an electron-transport layer, an electron-injection layer, a hole-blocking layer and other electron-functional layers can be arranged between the cathode and the quantum dot light-emitting layer. In some embodiments of the device with an inverted structure, the quantum dot light emitting diode includes a substrate, a cathode disposed on a surface of the substrate, an electron transport layer disposed on a surface of the cathode, a quantum dot light emitting layer disposed on a surface of the electron transport layer, a hole transport layer disposed on a surface of the quantum dot light emitting layer, a hole injection layer disposed on a surface of the hole transport layer, and an anode disposed on a surface of the hole injection layer.
Furthermore, the thickness of the hole transport layer of the quantum dot light-emitting diode is 20-40nm, and in the thickness range, the charge injection of the quantum dot light-emitting diode device can be well balanced, so that the brightness, the light-emitting efficiency and the service life of the device are effectively improved.
Furthermore, the light-emitting quantum dots in the quantum dot light-emitting layer are oil-soluble quantum dots and comprise binary phase, ternary phase and quaternary phase quantum dots; wherein the binary phase quantum dots include CdS, CdSe, CdTe, InP, AgS, PbS, PbSe, HgS, etc., but are not limited thereto, and the ternary phase quantum dots include ZnXCd1-XS、CuXIn1-XS、ZnXCd1-XSe、ZnXSe1-XS、ZnXCd1-XTe、PbSeXS1-XEtc. are not limited thereto, and the quaternary phase quantum dots include, ZnXCd1-XS/ZnSe、CuXIn1-XS/ZnS、ZnXCd1-XSe/ZnS、CuInSeS、ZnXCd1-XTe/ZnS、PbSeXS1-Xthe/ZnS and the like are not limited thereto. Then the quantum dots can be any one of the three common red, green and blue quantum dots or other yellow light, and the quantum dots can be cadmium-containing or cadmium-free. The quantum dot light-emitting layer of the material has the characteristics of narrow excitation spectrum, continuous distribution, high stability of emission spectrum and the like. The preparation of the quantum dot light emitting layer may include: and (3) spin-coating the prepared luminescent material solution with a certain concentration on a spin coater of a substrate on which the hole transport layer is spin-coated to form a film, controlling the thickness of the luminescent layer to be about 10-60 nm by adjusting the concentration of the solution, the spin-coating speed and the spin-coating time, and drying at a proper temperature.
Further, the electron transport layer may be made of electron transport materials conventional in the art, including but not limited to ZnO, TiO2、CsF、LiF、CsCO3And Alq3One kind of (1). The preparation of the electron transport layer comprises: placing the substrate coated with the quantum dot light emitting layer in a vacuum evaporation chamber, evaporating an electron transmission layer with the thickness of about 80nm at the evaporation speed of about 0.01-0.5 nm/s, and annealing at a proper temperature. Of course, the substrate with the quantum dot light emitting layer spin-coated may also be spin-coated with an electron transport layer in a glove box at a spin-coating speed of 1000 and 5000 rpm, and then annealed at a suitable temperature.
In one embodiment, a quantum dot light emitting diode has a structure as shown in fig. 2, which is, from bottom to top, an anode 1, a hole injection layer 2, a hole transport layer 3, a quantum dot light emitting layer 4, an electron transport layer 5, and a cathode 6. Wherein, the anode can be an ITO electrode or an ITO/Ag/ITO electrode; the hole injection layer material can be PEDOT PPS; the hole transport layer material can be an organic hole transport material or an inorganic hole transport material doped with tellurium nanosheets; the electron transport layer material can be selected from zinc oxide; the cathode material may be Al, Ag or Mg/Ag alloys.
In one embodiment, a method for manufacturing a quantum dot light emitting diode includes:
(1) evaporating a layer of ITO (or ITO/Ag/ITO) on a transparent substrate to be used as an anode electrode, wherein the optional thickness is 50-100nm, and then UVO is used for improving the surface performance;
(2) spin-coating a layer of PEDOT (PPS) as a Hole Injection Layer (HIL) with a thickness of 20-50nm on the anode, and then baking at 150 ℃ for 15min (other hole injection layer materials can be used or the step can be directly skipped);
(3) doping tellurium nano-sheets with a plurality of concentrations in a hole transport material, spin-coating the doped hole transport material on a hole injection layer, wherein the spin-coating rotation speed can be 1000-;
(4) spin-coating the quantum dot light-emitting layer on the hole transport layer at a spin-coating rotation speed of 2000-;
(5) zinc oxide is spin-coated on the quantum dot layer to serve as an electron transport layer, the zinc oxide is dissolved in ethanol, the spin-coating rotation speed can be 1000-;
(6) al metal is evaporated on the electron transport layer to be used as a cathode, and the thickness can be selected to be 20-100nm (other materials can be selected, such as Mg/Ag alloy or Ag and the like).
Further, the obtained QLED is subjected to a packaging process, and the packaging process may be performed by a common machine or by a manual method. Preferably, the oxygen content and the water content in the packaging treatment environment are both lower than 0.1ppm so as to ensure the stability of the device.
The invention is described in further detail with reference to a part of the test results, which are described in detail below with reference to specific examples.
Example 1
A quantum dot light emitting diode is shown in fig. 2 and comprises an anode 1, a hole injection layer 2, a hole transport layer 3, a quantum dot light emitting layer 4, an electron transport layer 5 and a cathode 6 from bottom to top in sequence. The preparation method comprises the following steps: :
(1) a layer of ITO is vapor-plated on the transparent substrate to serve as an anode, and then UVO is performed to improve the surface performance;
(2) spin-coating a layer of PEDOT on the anode, namely taking PPS as a hole injection layer, and then baking for 15min at 150 ℃, wherein the step is carried out in the air;
(3) adding MoO3Dissolving nano particles and tellurium nano sheets in a solvent according to a mass ratio of 100:5 to obtain a mixed solution, spin-coating the mixed solution on a hole injection layer at a rotation speed of 1000-;
(4) spin-coating the quantum dot light-emitting layer on the hole transport layer at an optional spin-coating rotation speed of 2000-;
(5) spin-coating a zinc oxide electron transport layer on the quantum dot layer, dissolving the zinc oxide in ethanol, wherein the spin-coating rotation speed can be 1000-;
(6) al metal is evaporated on the electron transport layer to be used as a cathode.
Example 2
A quantum dot light emitting diode is shown in fig. 2 and comprises an anode 1, a hole injection layer 2, a hole transport layer 3, a quantum dot light emitting layer 4, an electron transport layer 5 and a cathode 6 from bottom to top in sequence. The preparation method comprises the following steps: :
(1) a layer of ITO is vapor-plated on the transparent substrate to serve as an anode, and then UVO is performed to improve the surface performance;
(2) spin-coating a layer of PEDOT on the anode, namely taking PPS as a hole injection layer, and then baking for 15min at 150 ℃, wherein the step is carried out in the air;
(3) dissolving NiO nano particles and tellurium nano sheets in a solvent according to the mass ratio of 100:2 to obtain a mixed solution, then spin-coating the mixed solution on a hole injection layer, wherein the spin-coating rotation speed can be selected from 1000-;
(4) spin-coating the quantum dot light-emitting layer on the hole transport layer at an optional spin-coating rotation speed of 2000-;
(5) spin-coating a zinc oxide electron transport layer on the quantum dot layer, dissolving the zinc oxide in ethanol, wherein the spin-coating rotation speed can be 1000-;
(6) al metal is evaporated on the electron transport layer to be used as a cathode.
Example 3
A quantum dot light emitting diode is shown in fig. 2 and comprises an anode 1, a hole injection layer 2, a hole transport layer 3, a quantum dot light emitting layer 4, an electron transport layer 5 and a cathode 6 from bottom to top in sequence. The preparation method comprises the following steps: :
(1) a layer of ITO is vapor-plated on the transparent substrate to serve as an anode, and then UVO is performed to improve the surface performance;
(2) spin-coating a layer of PEDOT on the anode, namely taking PPS as a hole injection layer, and then baking for 15min at 150 ℃, wherein the step is carried out in the air;
(3) dissolving TFB and tellurium nanosheets in a solvent according to a mass ratio of 100:2 to obtain a mixed solution, spin-coating the mixed solution on a hole injection layer at a rotation speed of 1000-;
(4) spin-coating the quantum dot light-emitting layer on the hole transport layer at an optional spin-coating rotation speed of 2000-;
(5) spin-coating a zinc oxide electron transport layer on the quantum dot layer, dissolving the zinc oxide in ethanol, wherein the spin-coating rotation speed can be 1000-;
(6) al metal is evaporated on the electron transport layer to be used as a cathode.
Comparative example 1
A quantum dot light emitting diode comprises a hole transport layer made of MoO3Except for the composition, the structure and the material of other film layers are the same as those of the embodiment 1.
Comparative example 2
A quantum dot light emitting diode was fabricated as in example 2 except that the hole transport layer was made of NiO.
Comparative example 3
A quantum dot light emitting diode, the film structure and material were the same as those of example 3 except that the hole transport layer was composed of TFB.
Performance testing
The performance of the quantum dot light-emitting diode and the hole transport layer in the embodiment and the proportion is tested, and the test indexes and the test method are as follows:
(1) hole mobility: testing current density (J) -voltage (V) of the hole transport layer film, drawing a curve relation diagram, fitting a Space Charge Limited Current (SCLC) region in the relation diagram, and then obtaining the current density (J) -voltage (V) of the hole transport layer film according to the well-known Child,The hole mobility is calculated by the formula slaw:
J＝(9/8)εrε0μeV2/d3
wherein J represents current density in mAcm-2；εrDenotes the relative dielectric constant,. epsilon0Represents the vacuum dielectric constant; mu.seDenotes hole mobility in cm2V-1s-1(ii) a V represents the drive voltage, in units of V; d represents the film thickness in m.
(2) Resistivity: and measuring the resistivity of the hole transport layer by using the same resistivity measuring instrument.
(3) External Quantum Efficiency (EQE): measured using an EQE optical test instrument.
Note: the hole mobility and resistivity were tested as single layer thin film structure devices, i.e.: cathode/hole transport layer/anode. The external quantum efficiency test is the QLED device, namely: anode/hole injection layer/hole transport layer/quantum dot light emitting layer/electron transport layer/cathode, or cathode/electron transport layer/quantum dot light emitting layer/hole transport layer/hole injection layer/anode.
The test results are shown in table 1 below:
TABLE 1
As can be seen from table 1 above, the resistivity of the hole transport layer of the example of the present invention is significantly lower than that of the hole transport layer of the comparative example, and the hole mobility is significantly higher than that of the hole transport layer of the comparative example.
The external quantum efficiency of the quantum dot light-emitting diode (the hole transport layer is doped with the tellurium nanosheet) provided by the embodiment of the invention is obviously higher than that of the quantum dot light-emitting diode in the comparative example, which shows that the quantum dot light-emitting diode obtained by the embodiment has better luminous efficiency.
It is noted that the embodiments provided by the present invention all use blue light quantum dots CdXZn1-XS/ZnS is used as a material of a luminescent layer, is based on that a blue light luminescent system uses more systems (the blue light quantum dot luminescent diode has more reference value because high efficiency is difficult to achieve), and does not represent that the invention is only used for the blue light luminescent system.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.
Claims (12)
1. The preparation method of the composite material is characterized by comprising the following steps:
providing a hole transport material and tellurium nanosheets;
dissolving the hole transport material and the tellurium nanosheets in a solvent to obtain a mixed solution;
and drying the mixed solution to obtain the composite material.
2. The method for producing a composite material according to claim 1, wherein in the step of dissolving the hole transport material and tellurium nanosheets in a solvent, the mass ratio of the tellurium nanosheets to the hole transport material is (0.5-5): 100, respectively; and/or the presence of a gas in the gas,
in the obtained mixed solution, the concentration of the hole transport material is 8-40 mg/mL.
3. The method for preparing the composite material according to claim 1, wherein in the step of drying, the temperature is 100-180 ℃ and the time is 20-40 minutes; and/or the presence of a gas in the gas,
before the drying treatment, the method also comprises the step of depositing the mixed solution on a substrate.
4. A method for preparing a composite material according to any one of claims 1 to 3, wherein the hole transport material is selected from an inorganic hole transport material or an organic hole transport material; and/or the presence of a gas in the gas,
the solvent is at least one selected from ethanol, chlorobenzene, acetonitrile, isopropanol, toluene and tetrahydrofuran.
5. The method of claim 4, wherein the inorganic hole transport material is selected from NiO and MoO3And WO3At least one of; or,
the organic hole transport material is selected from at least one of TFB, PVK and PFB.
6. A composite material comprising a hole transport material and tellurium nanoplates dispersed between the hole transport material.
7. The composite of claim 6, wherein the hole transport material is selected from an inorganic hole transport material or an organic hole transport material.
8. The composite of claim 7, wherein the inorganic hole transport material is selected from NiO, MoO3And WO3At least one of; or,
the organic hole transport material is selected from at least one of TFB, PVK and PFB.
9. The composite material of any one of claims 6-8, wherein the composite material consists of the hole transport material and the tellurium nanoplates.
10. The composite material of claim 9, wherein the mass ratio of the tellurium nanoplates to the hole transport material is (0.5-5): 100.
11. a quantum dot light-emitting diode comprising an anode, a cathode and a quantum dot light-emitting layer disposed between the anode and the cathode, wherein a hole transport layer is further disposed between the anode and the quantum dot light-emitting layer, wherein the hole transport layer is composed of a composite material obtained by the method for producing a composite material according to any one of claims 1 to 5 or the composite material according to any one of claims 6 to 9.
12. The qd-led of claim 11, wherein the hole transport layer has a thickness of 20 nm to 40 nm.
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