CN113224200B - Gallium nitride semiconductor radiation detector, preparation method thereof and detection equipment - Google Patents
Gallium nitride semiconductor radiation detector, preparation method thereof and detection equipment Download PDFInfo
- Publication number
- CN113224200B CN113224200B CN202110501580.2A CN202110501580A CN113224200B CN 113224200 B CN113224200 B CN 113224200B CN 202110501580 A CN202110501580 A CN 202110501580A CN 113224200 B CN113224200 B CN 113224200B
- Authority
- CN
- China
- Prior art keywords
- diamond
- gallium nitride
- film
- nitride semiconductor
- radiation detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 84
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 82
- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 230000005855 radiation Effects 0.000 title claims abstract description 41
- 238000002360 preparation method Methods 0.000 title claims abstract description 23
- 238000001514 detection method Methods 0.000 title claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 36
- 239000010408 film Substances 0.000 claims description 105
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 67
- 229910052799 carbon Inorganic materials 0.000 claims description 59
- 239000011248 coating agent Substances 0.000 claims description 49
- 238000000576 coating method Methods 0.000 claims description 49
- 238000005234 chemical deposition Methods 0.000 claims description 48
- 238000005289 physical deposition Methods 0.000 claims description 39
- 238000005566 electron beam evaporation Methods 0.000 claims description 26
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 24
- 239000010409 thin film Substances 0.000 claims description 23
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 18
- 238000001704 evaporation Methods 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 12
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 11
- 229910052786 argon Inorganic materials 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 9
- 230000008020 evaporation Effects 0.000 claims description 9
- 229910002804 graphite Inorganic materials 0.000 claims description 9
- 239000010439 graphite Substances 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000005086 pumping Methods 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 239000000498 cooling water Substances 0.000 claims description 6
- 239000003353 gold alloy Substances 0.000 claims description 5
- ZNKMCMOJCDFGFT-UHFFFAOYSA-N gold titanium Chemical compound [Ti].[Au] ZNKMCMOJCDFGFT-UHFFFAOYSA-N 0.000 claims description 5
- 239000013077 target material Substances 0.000 claims description 5
- 229910001258 titanium gold Inorganic materials 0.000 claims description 5
- 239000007772 electrode material Substances 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 230000008859 change Effects 0.000 claims description 3
- 239000013078 crystal Substances 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 230000010355 oscillation Effects 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 230000001105 regulatory effect Effects 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 15
- 230000015556 catabolic process Effects 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 17
- 230000008878 coupling Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 238000005406 washing Methods 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 238000001755 magnetron sputter deposition Methods 0.000 description 6
- 239000007888 film coating Substances 0.000 description 5
- 238000009501 film coating Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- -1 carbon ions Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 230000009643 growth defect Effects 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
- H01L31/0336—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032 in different semiconductor regions, e.g. Cu2X/CdX hetero- junctions, X being an element of Group VI of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention relates to a gallium nitride semiconductor radiation detector, a preparation method thereof and detection equipment comprising the gallium nitride semiconductor radiation detector, and aims to solve the problems that a gallium nitride material is easy to crack when being prepared with the radiation detector due to vertical defects, and the radiation detector is easy to generate electric breakdown when working due to the vertical defects. The gallium nitride semiconductor radiation detector is provided with a gallium nitride layer, a first diamond-like film and a second diamond-like film are respectively deposited on two sides of the gallium nitride layer, a third diamond-like film and a fourth diamond-like film are respectively deposited on the outer sides of the first diamond-like film and the second diamond-like film, and a first electrode layer and a second electrode layer are respectively deposited on the outer sides of the third diamond-like film and the fourth diamond-like film. The invention also provides a preparation method of the gallium nitride semiconductor radiation detector and detection equipment comprising the gallium nitride semiconductor radiation detector.
Description
Technical Field
The invention relates to a semiconductor radiation detector, in particular to a gallium nitride semiconductor radiation detector, a preparation method thereof and detection equipment comprising the gallium nitride semiconductor radiation detector.
Background
Gallium nitride is importantThe wide-bandgap semiconductor material is expected to be used for preparing a current type semiconductor radiation detector with good radiation resistance and fast response. In general, a gallium nitride material with a thickness of 10-500 μm is required for manufacturing a detector for detecting rays and particles, but the gallium nitride material prepared by various growth methods at present generally has the problem of high defect density, for example, the dislocation density of the gallium nitride grown by an HVPE method or an MOCVD method is about 10 5 cm -3 Of even higher order and studies have found that growth defects within the material are mostly "vertical defects" along the direction of growth of the material.
When the gallium nitride semiconductor material with high-density vertical defects is used for manufacturing a radiation detector and an electronic device, the problems of easy breakdown and easy fragmentation of the material in the processes of cleaning and electrode manufacturing exist, the yield of the device is very low, and the successful preparation of a large-area current type detector is seriously influenced. If a vertical electrode structure (metal-semiconductor-metal) is selected to directly manufacture electrodes on two surfaces of a material, a large number of vertical defects are potential leakage channels, and when a detector works and is subjected to high voltage, electric breakdown is easy to occur, so that the detector fails. The detection equipment using the radiation detector has corresponding problems due to defects of the detector.
Disclosure of Invention
The invention aims to solve the problems that a gallium nitride material is easy to crack when a radiation detector is prepared due to vertical defects, and the radiation detector is easy to generate electric breakdown when the radiation detector works due to the vertical defects, provides a gallium nitride semiconductor radiation detector and a preparation method thereof, and also provides detection equipment comprising the gallium nitride semiconductor radiation detector.
The technical scheme of the invention is as follows:
the invention provides a gallium nitride semiconductor radiation detector, which is provided with a gallium nitride layer, wherein a first diamond-like carbon film and a second diamond-like carbon film are respectively deposited on two sides of the gallium nitride layer, a third diamond-like carbon film is deposited on the outer side of the first diamond-like carbon film, a fourth diamond-like carbon film is deposited on the outer side of the second diamond-like carbon film, a first electrode layer is deposited on the outer side of the third diamond-like carbon film, and a second electrode layer is deposited on the outer side of the fourth diamond-like carbon film;
the first diamond film has a resistivity of 10 8 ～10 9 Ω·cm；
The second diamond-like carbon film has a resistivity of 10 8 ～10 9 Ω·cm；
The third diamond-like carbon film has a resistivity of less than 10 -3 Ω·cm；
The resistivity of the fourth diamond-like carbon film is less than 10 -3 Ω·cm。
The first diamond-like film and the second diamond-like film have high resistance, so that the pressure resistance of the vertical structure detector can be improved; the third diamond-like carbon film and the fourth diamond-like carbon film have low resistance, so that reliable electric contact between the first diamond-like carbon film and the metal electrode and between the second diamond-like carbon film and the metal electrode can be improved, and further the preparation of a large-area gallium nitride detector is realized.
Further, the third diamond-like carbon film and the fourth diamond-like carbon film are both diamond-like carbon films doped with nitrogen. The third diamond-like carbon film and the fourth diamond-like carbon film are prepared by a direct current radio frequency coupling magnetron sputtering method, and the working gas is nitrogen. And nitrogen is introduced to ensure that the third diamond-like carbon film and the fourth diamond-like carbon film are doped by ions during deposition to form the nitrogen-doped diamond-like carbon film, so that the resistance is reduced.
Further, the thickness of the first diamond film is 0.1-1 μm; the thickness of the second diamond-like carbon film is 0.1-1 μm. The first diamond-like carbon film and the second diamond-like carbon film are prepared by a direct current radio frequency coupling magnetron sputtering method, and the working gas is hydrogen and argon. By utilizing the characteristic of inert gas argon, the graphite target material is sputtered by argon in a direct current radio frequency coupling magnetron sputtering method, so that carbon ions of the graphite target material are sputtered to the periphery and uniformly deposited on the gallium nitride material.
Further, the thickness of the third diamond-like carbon film is 0.1-0.2 μm; the thickness of the fourth diamond-like carbon film is 0.1-0.2 μm.
Further, the material of the first electrode layer comprises one or two of gold and titanium-gold alloy, and the thickness of the first electrode layer is 200-500nm; the second electrode layer is made of one or two of gold and titanium-gold alloy, and the thickness of the second electrode layer is 200-500nm. Preferably, the material of the first electrode layer and the second electrode layer is gold.
Further, the first diamond-like thin film and the second diamond-like thin film are the same in material and thickness; the third diamond-like carbon film and the fourth diamond-like carbon film are made of the same material and have the same thickness.
Further, the first electrode layer and the second electrode layer are made of the same material and have the same thickness.
The invention also provides a preparation method of the gallium nitride semiconductor radiation detector, which comprises the following steps:
step 1), cleaning of gallium nitride semiconductor substrate
1.1, washing the gallium nitride semiconductor in an ultrasonic cleaner by using deionized water, and washing the gallium nitride semiconductor by using the deionized water for multiple times after the washing is finished;
1.2 cleaning the gallium nitride semiconductor treated in the step 1.1 with acetone in an ultrasonic cleaner, then cleaning with absolute ethyl alcohol in the ultrasonic cleaner, and finally washing with ethyl alcohol for multiple times;
1.3, drying the gallium nitride semiconductor treated in the step 1.2 in air;
step 2), preparation of first diamond-like thin film (3) and second diamond-like thin film (5)
2.1 opening a vacuum chamber of the multifunctional physical and chemical deposition system, fixing the gallium nitride semiconductor cleaned in the step 1 on a sample table in the vacuum chamber, and closing the vacuum chamber for vacuumizing;
2.2 through the vacuum pumping system of the multifunctional physical and chemical deposition system, the pressure in the vacuum chamber is reduced to 10 -4 Pa；
2.3 preheating a radio frequency and a direct current power supply in the multifunctional physical and chemical deposition system, introducing high-purity hydrogen with the volume fraction of 99.999 percent and high-purity argon with the volume fraction of 99.999 percent into a vacuum chamber, and adjusting the working pressure to 0.9-1.1Pa;
2.4 turning on a radio frequency switch and a direct current power switch in the multifunctional physical and chemical deposition system, adjusting the direct current voltage to 490-510V and the radio frequency power to 58-62W, pre-sputtering the graphite target for 4-6min, and then performing film deposition for 2.5-3.5 hours;
2.5 after the deposition of the coating film is finished, closing all power supplies and other equipment of the multifunctional physical and chemical deposition system, and cooling the sample;
2.6 deflating the vacuum chamber of the multifunctional physical and chemical deposition system, and taking out the gallium nitride semiconductor sample obtained in the step 2.5;
step 3), preparation of a third diamond-like carbon film (2) and a fourth diamond-like carbon film (6)
3.1 opening a vacuum chamber of the multifunctional physical and chemical deposition system, fixing the gallium nitride semiconductor prepared in the step 2.6 on a sample table in the vacuum chamber, and closing the vacuum chamber to prepare for vacuumizing;
3.2 through the vacuum pumping system of the multifunctional physical and chemical deposition system, the pressure in the vacuum chamber is reduced to 10 -4 Pa；
3.3 preheating the radio frequency and the direct current power supply of the multifunctional physical and chemical deposition system, introducing high-purity nitrogen with the volume fraction of 99.999 percent into the vacuum chamber, and adjusting the working air pressure to be 0.9-1.1Pa;
3.4, turning on a radio frequency switch and a direct current power switch of the multifunctional physical and chemical deposition system, adjusting the direct current voltage to 490-510V and the radio frequency power to 58-62W, pre-sputtering the graphite target for 4-6min, and then performing film deposition for 50-70min;
3.5 after the deposition of the coating film is finished, closing all power supplies and other equipment of the multifunctional physical and chemical deposition system, and cooling the sample;
3.6 deflating the vacuum chamber of the multifunctional physical and chemical deposition system, and taking out the gallium nitride semiconductor sample obtained in the step 3.5;
step 4), preparation of the first electrode layer (1) and the second electrode layer (7)
4.1 placing the gallium nitride semiconductor sample obtained in the step 3.6 in electron beam evaporation coating equipment;
4.2 pretreatment of electrode material: adding electrode material particles with the purity of 99.99 percent into a tungsten crucible of electron beam evaporation coating equipment, preheating, cooling and cleaning with deionized water;
4.3 regulating the pressure system of the electron beam evaporation coating equipment to make the working pressure lower than 6X 10 -3 Pa；
4.4 setting the coating thickness in the electron beam evaporation coating equipment, pressing a high-voltage switch of the electron beam evaporation coating equipment, adjusting a voltage regulator, evaporating the material bombarded by the electron beam energy and the beam under the conditions that the voltage of an electron gun is 9-11kV and the current is 0.09-0.12A, wherein the evaporation rate is 0.4-0.6nm/s, observing the change of the coating thickness displayed by a quartz crystal oscillation film thickness monitor until the set coating thickness is reached, and stopping evaporation;
4.5 after evaporation is finished, immediately turning off a filament switch of the electron beam evaporation coating equipment, gradually reducing the high voltage to zero, turning off a high-voltage switch, and finally turning off a main power supply and a cooling water system;
4.6 after coating, the sample is placed under high vacuum for more than 10min, then a vacuum valve of the electron beam evaporation coating equipment is closed, a molecular pump power supply is cut off, finally a mechanical pump, cooling water and power supplies are closed, then a coating working chamber of the electron beam evaporation coating equipment is inflated, and the sample is taken out.
9. The method for preparing a gallium nitride semiconductor radiation detector according to claim 8, wherein:
step 2.3 specifically, after preheating a radio frequency and a direct current power supply in the multifunctional physical and chemical deposition system for 10 minutes, introducing gas into a vacuum chamber at a rate of 5sccm of high-purity hydrogen with a volume fraction of 99.999% and at a rate of 60sccm of high-purity argon with a volume fraction of 99.999%, and adjusting the working pressure to 1Pa;
step 2.4, specifically, turning on a radio frequency switch and a direct current power switch in the multifunctional physical chemical deposition system, adjusting the direct current voltage to be 500V and the radio frequency power to be 60W, pre-sputtering the graphite target for 5min, and then performing coating deposition for 3 hours;
step 3.3, specifically, preheating a radio frequency and direct current power supply of the multifunctional physical chemical deposition system for 10 minutes, introducing gas into the vacuum chamber at a rate of 20sccm of high-purity nitrogen with a volume fraction of 99.999%, and adjusting the working pressure to 1Pa;
step 3.4, specifically, turning on a radio frequency switch and a direct current power switch of the multifunctional physical chemical deposition system, adjusting the direct current voltage to be 500V and the radio frequency power to be 60W, pre-sputtering the target for 5min, and then performing film coating deposition for 1 hour;
in step 4.4, the voltage of the electron gun is 10kV.
The invention also provides detection equipment which comprises the gallium nitride semiconductor radiation detector.
The invention has the beneficial effects that:
1. the first diamond-like film and the second diamond-like film have high resistance, the resistivity of the gallium nitride material near the defect can be improved after the defects are filled and covered by the diamond-like films, the influence of vertical defects in the gallium nitride material on the preparation of the detector is inhibited, the problem that the prepared detector is easy to electrically breakdown at the defect position is solved, the large-area (more than centimeter level) gallium nitride radiation detector can be conveniently prepared, and the high pressure resistance of the detector can be obviously improved in the process of preparing the detector.
2. The third diamond-like carbon film and the fourth diamond-like carbon film have low resistance, and the metal electrode is prepared on the low-resistance diamond-like carbon film, so that the reliable contact between the high-resistance diamond-like carbon film and the metal electrode is improved, and the problem that the ohmic contact electrode of the wide-bandgap semiconductor material is difficult to effectively obtain is solved.
3. The effective utilization rate of the material is improved. The method has the advantages that the gallium nitride material with obvious defects is directly eliminated or small pieces of defect-free gallium nitride materials are cut from a large block of material to manufacture the detector, so that a large amount of gallium nitride materials are wasted, the available gallium nitride materials are extremely high in obtaining cost, the influence of the defects on the preparation of the detector is weakened by depositing the diamond-like carbon film on the gallium nitride materials, and the utilization rate of the gallium nitride semiconductor materials is improved.
4. The preparation method provided by the invention has the advantages of strong operability and controllability, simple and easy technological process and lower cost.
5. The detection equipment provided by the invention also has the beneficial effect that the performance of the detection equipment is correspondingly and obviously improved due to the beneficial effect of the used radiation detector.
Drawings
FIG. 1 is a schematic view of a GaN semiconductor radiation detector according to the present invention.
FIG. 2 is a schematic diagram of the principle of the multifunctional physical-chemical deposition system for preparing diamond-like carbon film according to the present invention.
The reference numbers are as follows:
1-a first electrode layer, 2-a third diamond-like carbon film, 3-a first diamond-like carbon film, 4-gallium nitride layer, 5-a second diamond-like carbon film, 6-a fourth diamond-like carbon film, and 7-a second electrode layer.
Detailed Description
The present invention will be described in detail below with reference to the accompanying drawings.
The invention provides a gallium nitride semiconductor radiation detector, as shown in figure 1, which comprises a gallium nitride layer 4, a first diamond-like film 3 and a second diamond-like film 5 respectively deposited on two sides of the gallium nitride layer 4, a third diamond-like film 2 deposited on the outer side of the first diamond-like film 3, a fourth diamond-like film 6 deposited on the outer side of the second diamond-like film 5, a first electrode layer 1 deposited on the outer side of the third diamond-like film 2, and a second electrode layer 7 deposited on the outer side of the fourth diamond-like film 6.
The first diamond-like film 3 and the second diamond-like film 5 are both prepared by a direct current radio frequency coupling magnetron sputtering method, the thickness is 0.1-1 mu m, the working gas is hydrogen and argon, the first diamond-like film 3 and the second diamond-like film 5 have high resistance and the resistivity is 10 8 ～10 9 Omega cm. The first diamond-like film 3 and the second diamond-like film 5 mainly play a role in improving the pressure resistance of the vertical structure detector.
The third diamond-like carbon film 2 and the fourth diamond-like carbon film 6 are both prepared by adopting a direct current radio frequency coupling magnetron sputtering method, the thickness is 0.1-0.2 mu m, the working gas is nitrogen, and the third diamond-like carbon film 2 and the fourth diamond-like carbon film 6 have low contentResistivity of less than 10 -3 Omega cm. When the third diamond-like carbon film 2 and the fourth diamond-like carbon film 6 are prepared, the working gas is nitrogen, and the nitrogen-doped diamond-like carbon film is formed by ion doping during deposition, so that the conductivity is increased, and the resistance is reduced.
The first electrode layer 1 and the second electrode layer 7 are prepared by adopting an electron beam evaporation method, and the prepared electrode layers are gold electrodes with the thickness of 200-500nm. By manufacturing gold electrodes on the third diamond-like carbon film 2 and the fourth diamond-like carbon film 6, ohmic contact can be easily obtained between the first diamond-like carbon film 3 and the gold electrodes and between the second diamond-like carbon film 5 and the gold electrodes, and the problem that the ohmic contact electrodes of wide bandgap semiconductor materials are difficult to effectively obtain is solved. In another embodiment the electrode layer material may be a titanium-gold alloy.
Meanwhile, the invention also provides detection equipment which adopts the gallium nitride semiconductor radiation detector provided by the embodiment of the invention.
An exemplary gallium nitride semiconductor radiation detector fabrication method is provided below.
1. Test device
The third diamond-like film 2, the first diamond-like film 3, the second diamond-like film 5 and the fourth diamond-like film 6 are all prepared by a direct current radio frequency coupling magnetron sputtering method, and the used equipment is a multifunctional physical and chemical deposition system produced by Shenyang Tiaochu scientific and technological responsibility company Limited, and as shown in figure 2, the principle schematic diagram of the multifunctional physical and chemical deposition system is shown.
The multifunctional physical and chemical deposition system comprises a vacuum deposition system and a direct current radio frequency coupling system.
The vacuum deposition system is a film preparation space and mainly comprises a vacuum reaction chamber, a vacuum pumping system, a gas flow control system, a magnetic control target gun, a vacuum stepping motor and a sample platform.
The direct current radio frequency coupling system comprises a radio frequency power supply, a direct current power supply, a radio frequency matching regulator and a filter. The radio frequency matching regulator is connected with the radio frequency power supply and is used for regulating the reflected power of the radio frequency power supply to be minimized. The filter is connected with the direct current power supply to prevent interference of the radio frequency power supply. Sputtering the graphite target material by the direct current radio frequency coupling system and the magnetic control target gun, and then forming a film in a vacuum chamber.
The first electrode layer and the second electrode layer are prepared by an electron beam evaporation method, and the adopted equipment is Denton Vacuumexplorer electron beam evaporation coating equipment in the United states.
2. Cleaning of gallium nitride semiconductor substrates
2-1, washing the gallium nitride semiconductor in an ultrasonic cleaner by using deionized water for 15 minutes, and washing the gallium nitride semiconductor by using the deionized water for multiple times after the washing is finished;
2-2, cleaning the gallium nitride semiconductor treated in the step 2-1 in an ultrasonic cleaner for 15 minutes by using acetone, cleaning the gallium nitride semiconductor in the ultrasonic cleaner for 15 minutes by using absolute ethyl alcohol, and finally, washing the gallium nitride semiconductor for multiple times by using ethyl alcohol to ensure that impurities on the surface are removed;
and 2-3, drying the gallium nitride semiconductor treated in the step 2-2 by using a hair drier or compressed air.
3. Preparation of first diamond-like thin film 3 and second diamond-like thin film 5
3-1, opening a vacuum chamber of the multifunctional physical chemical deposition system, fixing the gallium nitride semiconductor detector cleaned in the step 2-3 on a sample table in the vacuum chamber, and closing the vacuum chamber to prepare for vacuumizing;
3-2, reducing the air pressure of the vacuum chamber to 10 ℃ by a vacuum pumping system of the multifunctional physical and chemical deposition system -4 Pa；
3-3, preheating a radio frequency and direct current power supply in the multifunctional physical and chemical deposition system for 10 minutes, introducing gas into the vacuum chamber at the rate of 5sccm of hydrogen (high-purity hydrogen with the volume fraction of 99.999%) and 60sccm of argon (high-purity argon with the volume fraction of 99.999%), and adjusting the working pressure to be 1Pa;
3-4, turning on a radio frequency switch and a direct current power switch in the multifunctional physical and chemical deposition system, adjusting the direct current voltage to be 500V and the radio frequency power to be 60W, pre-sputtering the target material for 5min before formal film coating, and then performing film coating deposition for 3 hours;
3-5, after the deposition of the coating film is finished, closing all power supplies and other equipment of the multifunctional physical and chemical deposition system, and cooling the sample for 1h;
and 3-6, exhausting the vacuum chamber of the multifunctional physical and chemical deposition system, and taking out the gallium nitride semiconductor sample obtained in the step 3-5.
4. Preparation of third Diamond-like film 2 and fourth Diamond-like film 6
4-1, opening a vacuum chamber of the multifunctional physical chemical deposition system, fixing the gallium nitride semiconductor prepared in the step 3-6 on a sample table in the vacuum chamber, and closing the vacuum chamber to prepare for vacuumizing;
4-2, the pressure of the vacuum chamber is reduced to 10 by a vacuum pumping system of the multifunctional physical and chemical deposition system -4 Pa, the subsequent experiment can be carried out;
4-3, preheating a radio frequency and direct current power supply of the multifunctional physical and chemical deposition system for 10 minutes, introducing gas into the vacuum chamber at a rate of 20sccm of nitrogen (high-purity nitrogen with a volume fraction of 99.999%), and adjusting the working pressure to 1Pa;
4-4, turning on a radio frequency switch and a direct current power supply switch of the multifunctional physical and chemical deposition system, adjusting the direct current voltage to be 500V and the radio frequency power to be 60W, pre-sputtering the target for 5min before formal film coating, and then performing film coating deposition for 1 hour;
4-5, after the deposition of the coating film is finished, closing all power supplies and other equipment of the multifunctional physical and chemical deposition system, and cooling the sample for 1 hour;
and 4-6, exhausting the vacuum chamber of the multifunctional physical and chemical deposition system, and taking out the gallium nitride semiconductor sample obtained in the step 4-5.
5. Preparation of the first electrode layer 1 and the second electrode layer 7
5-1, placing the gallium nitride semiconductor sample obtained in the step 4-6 in electron beam evaporation coating equipment;
5-2, pretreatment of gold: adding 20g of gold particles (purity is 99.99%) into a tungsten crucible with the volume of 15ml of electron beam evaporation coating equipment, preheating, cooling and cleaning with deionized water;
5-3, adjusting the pressure system of the electron beam evaporation coating equipment to ensure that the working pressure is lower than 6 multiplied by 10 -3 Pa；
5-4, setting the coating thickness in the electron beam evaporation coating equipment, pressing a high-voltage switch of the electron beam evaporation coating equipment, adjusting a voltage regulator, evaporating the electron beam energy and beam bombardment material under the conditions that the voltage of an electron gun is 10kV and the current is 0.1A, wherein the evaporation rate is 0.5nm/s, observing the change of the coating thickness displayed by a quartz crystal oscillation film thickness monitor until the set coating thickness is reached, and stopping evaporation;
5-5, immediately turning off a filament switch of the electron beam evaporation coating equipment after evaporation is finished, then gradually reducing the high voltage to zero, turning off a high-voltage switch, and finally turning off a main power supply and a cooling water system;
5-6, after all the coating, placing the sample in high vacuum for 10min, then closing a vacuum valve of the electron beam evaporation coating equipment, cutting off a power supply of a molecular pump, finally closing a mechanical pump, cooling water and the power supply, then inflating a coating working chamber, and taking out the sample.
Claims (10)
1. A gallium nitride semiconductor radiation detector, characterized by: the anti-corrosion coating is provided with a gallium nitride layer (4), a first diamond-like thin film (3) and a second diamond-like thin film (5) are respectively deposited on two sides of the gallium nitride layer (4), a third diamond-like thin film (2) is deposited on the outer side of the first diamond-like thin film (3), a fourth diamond-like thin film (6) is deposited on the outer side of the second diamond-like thin film (5), a first electrode layer (1) is deposited on the outer side of the third diamond-like thin film (2), and a second electrode layer (7) is deposited on the outer side of the fourth diamond-like thin film (6);
the first diamond-like thin film (3) has a resistivity of 10 8 ～10 9 Ω·cm；
The second diamond-like thin film (5) has a resistivity of 10 8 ～10 9 Ω·cm；
The third diamond-like thin film (2) has a resistivity of less than 10 -3 Ω·cm；
The fourth diamond-like thin film (6) has a resistivity of less than 10 -3 Ω·cm。
2. The gallium nitride semiconductor radiation detector of claim 1, wherein: the third diamond-like thin film (2) and the fourth diamond-like thin film (6) are both diamond-like thin films doped with nitrogen.
3. The gallium nitride semiconductor radiation detector of claim 1, wherein:
the thickness of the first diamond-like film (3) is 0.1-1 μm;
the thickness of the second diamond-like carbon film (5) is 0.1-1 μm.
4. The gallium nitride semiconductor radiation detector of claim 2, wherein:
the thickness of the third diamond-like carbon film (2) is 0.1-0.2 μm;
the thickness of the fourth diamond-like carbon film (6) is 0.1-0.2 μm.
5. A gallium nitride semiconductor radiation detector according to claim 3, wherein:
the first electrode layer (1) is made of one or two of gold and titanium-gold alloy, and the thickness of the first electrode layer is 200-500nm;
the material of the second electrode layer (7) comprises one or two of gold and titanium-gold alloy, and the thickness is 200-500nm.
6. The gallium nitride semiconductor radiation detector according to any one of claims 1 to 5, wherein: the first diamond-like film (3) and the second diamond-like film (5) are made of the same material and have the same thickness; the third diamond-like film (2) and the fourth diamond-like film (6) are made of the same material and have the same thickness.
7. The gallium nitride semiconductor radiation detector of claim 6, wherein: the first electrode layer (1) and the second electrode layer (7) are made of the same material and have the same thickness.
8. A preparation method of a gallium nitride semiconductor radiation detector is characterized by comprising the following steps:
step 1), cleaning of gallium nitride semiconductor substrate
Step 2), preparation of first diamond-like thin film (3) and second diamond-like thin film (5)
2.1 opening a vacuum chamber of the multifunctional physical and chemical deposition system, fixing the gallium nitride semiconductor cleaned in the step 1 on a sample table in the vacuum chamber, and closing the vacuum chamber to prepare for vacuum pumping;
2.2 through the vacuum pumping system of the multifunctional physical and chemical deposition system, the air pressure of the vacuum chamber is reduced to 10 -4 Pa；
2.3 preheating a radio frequency and a direct current power supply in the multifunctional physical and chemical deposition system, introducing high-purity hydrogen with the volume fraction of 99.999 percent and high-purity argon with the volume fraction of 99.999 percent into a vacuum chamber, and adjusting the working pressure to 0.9-1.1Pa;
2.4 turning on a radio frequency switch and a direct current power switch in the multifunctional physical and chemical deposition system, adjusting the direct current voltage to 490-510V and the radio frequency power to 58-62W, pre-sputtering the graphite target for 4-6min, and then performing film deposition for 2.5-3.5 hours;
2.5 after the deposition of the coating film is finished, closing all power supplies and other equipment of the multifunctional physical and chemical deposition system, and cooling the sample;
2.6 deflating the vacuum chamber of the multifunctional physical and chemical deposition system, and taking out the gallium nitride semiconductor sample obtained in the step 2.5;
step 3), preparation of a third diamond-like carbon film (2) and a fourth diamond-like carbon film (6)
3.1 opening a vacuum chamber of the multifunctional physical and chemical deposition system, fixing the gallium nitride semiconductor prepared in the step 2.6 on a sample table in the vacuum chamber, and closing the vacuum chamber for vacuumizing;
3.2 through the vacuum pumping system of the multifunctional physical and chemical deposition system, the pressure in the vacuum chamber is reduced to 10 -4 Pa；
3.3 preheating the radio frequency and the direct current power supply of the multifunctional physical and chemical deposition system, introducing high-purity nitrogen with the volume fraction of 99.999% into the vacuum chamber, and adjusting the working air pressure to be 0.9-1.1Pa;
3.4 opening a radio frequency switch and a direct current power switch of the multifunctional physical and chemical deposition system, adjusting the direct current voltage to 490-510V and the radio frequency power to 58-62W, pre-sputtering the graphite target for 4-6min, and then performing film deposition for 50-70min;
3.5 after the deposition of the coating film is finished, closing all power supplies and other equipment of the multifunctional physical and chemical deposition system, and cooling the sample;
3.6 deflating the vacuum chamber of the multifunctional physical and chemical deposition system, and taking out the gallium nitride semiconductor sample obtained in the step 3.5;
step 4), preparation of the first electrode layer (1) and the second electrode layer (7)
4.1 placing the gallium nitride semiconductor sample obtained in the step 3.6 in electron beam evaporation coating equipment;
4.2 pretreatment of electrode material: adding electrode material particles with the purity of 99.99 percent into a tungsten crucible of electron beam evaporation coating equipment, preheating, cooling and cleaning with deionized water;
4.3 regulating the pressure system of the electron beam evaporation coating equipment to make the working pressure lower than 6X 10 -3 Pa；
4.4 setting the coating thickness in the electron beam evaporation coating equipment, pressing a high-voltage switch of the electron beam evaporation coating equipment, adjusting a pressure regulator, evaporating the electron beam energy and beam bombardment material under the conditions that the voltage of an electron gun is 9-11kV and the current is 0.09-0.12A, wherein the evaporation rate is 0.4-0.6nm/s, observing the change of the coating thickness displayed by a quartz crystal oscillation film thickness monitor until the set coating thickness is reached, and stopping evaporation;
4.5 immediately turning off a filament switch of the electron beam evaporation coating equipment after evaporation is finished, then gradually reducing the high voltage to zero, turning off the high-voltage switch, and finally turning off a main power supply and a cooling water system;
4.6 after coating, the sample is placed under high vacuum for more than 10min, then the vacuum valve of the electron beam evaporation coating equipment is closed, the power supply of the molecular pump is cut off, finally the mechanical pump, cooling water and power supply are closed, then the coating working chamber of the electron beam evaporation coating equipment is inflated, and the sample is taken out.
9. The method of manufacturing a gallium nitride semiconductor radiation detector according to claim 8, wherein:
step 2.3, after preheating a radio frequency and direct current power supply in the multifunctional physical and chemical deposition system for 10 minutes, introducing gas into a vacuum chamber at a rate of 5sccm of high-purity hydrogen with a volume fraction of 99.999% and at a rate of 60sccm of high-purity argon with a volume fraction of 99.999%, and adjusting the working pressure to 1Pa;
step 2.4, specifically, a radio frequency switch and a direct current power supply switch in the multifunctional physical chemical deposition system are turned on, the direct current voltage is adjusted to be 500V, the radio frequency power is adjusted to be 60W, the graphite target is subjected to pre-sputtering for 5min, and then coating deposition is carried out for 3 hours;
step 3.3, specifically, preheating a radio frequency and direct current power supply of the multifunctional physical chemical deposition system for 10 minutes, introducing gas into the vacuum chamber at a rate of 20sccm of high-purity nitrogen with a volume fraction of 99.999%, and adjusting the working pressure to 1Pa;
step 3.4, specifically, a radio frequency switch and a direct current power supply switch of the multifunctional physical chemical deposition system are turned on, the direct current voltage is adjusted to be 500V, the radio frequency power is adjusted to be 60W, the target material is subjected to pre-sputtering for 5min, and then coating deposition is carried out for 1 hour;
in step 4.4, the voltage of the electron gun is 10kV.
10. A detection apparatus, characterized by: comprising a gallium nitride semiconductor radiation detector according to any one of claims 1 to 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110501580.2A CN113224200B (en) | 2021-05-08 | 2021-05-08 | Gallium nitride semiconductor radiation detector, preparation method thereof and detection equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110501580.2A CN113224200B (en) | 2021-05-08 | 2021-05-08 | Gallium nitride semiconductor radiation detector, preparation method thereof and detection equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113224200A CN113224200A (en) | 2021-08-06 |
| CN113224200B true CN113224200B (en) | 2022-11-04 |
Family
ID=77094320
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110501580.2A Active CN113224200B (en) | 2021-05-08 | 2021-05-08 | Gallium nitride semiconductor radiation detector, preparation method thereof and detection equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113224200B (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002076369A (en) * | 2000-09-01 | 2002-03-15 | Kobe Steel Ltd | Electronic element, and diode, transistor and thyristor using the same |
| TW200828639A (en) * | 2006-08-14 | 2008-07-01 | jian-min Song | Diamond-like carbon electronic devices and methods of manufacture |
| WO2009033076A1 (en) * | 2007-09-05 | 2009-03-12 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devices |
| TW201342574A (en) * | 2012-01-06 | 2013-10-16 | Akhan Technologies Inc | Diamond semiconductor system and method |
| CN104701364A (en) * | 2015-02-04 | 2015-06-10 | 厦门市三安集成电路有限公司 | Gallium nitride based field effect transistor and preparation method thereof |
| CN107347256A (en) * | 2014-12-18 | 2017-11-14 | Rfhic公司 | Include the compound semi-conductor device structure of Polycrystalline vapour deposition diamond |
| CN109825808A (en) * | 2019-03-01 | 2019-05-31 | 许世鹏 | A kind of doped diamond film preparation device and method |
| CN110504229A (en) * | 2018-05-17 | 2019-11-26 | 深圳先进技术研究院 | A kind of highly heat-conductive material and its preparation method and application |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7132309B2 (en) * | 2003-04-22 | 2006-11-07 | Chien-Min Sung | Semiconductor-on-diamond devices and methods of forming |
| US20060113545A1 (en) * | 2004-10-14 | 2006-06-01 | Weber Eicke R | Wide bandgap semiconductor layers on SOD structures |
| US7888171B2 (en) * | 2008-12-22 | 2011-02-15 | Raytheon Company | Fabricating a gallium nitride layer with diamond layers |
-
2021
- 2021-05-08 CN CN202110501580.2A patent/CN113224200B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002076369A (en) * | 2000-09-01 | 2002-03-15 | Kobe Steel Ltd | Electronic element, and diode, transistor and thyristor using the same |
| TW200828639A (en) * | 2006-08-14 | 2008-07-01 | jian-min Song | Diamond-like carbon electronic devices and methods of manufacture |
| WO2009033076A1 (en) * | 2007-09-05 | 2009-03-12 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Transparent nanocrystalline diamond contacts to wide bandgap semiconductor devices |
| TW201342574A (en) * | 2012-01-06 | 2013-10-16 | Akhan Technologies Inc | Diamond semiconductor system and method |
| CN107347256A (en) * | 2014-12-18 | 2017-11-14 | Rfhic公司 | Include the compound semi-conductor device structure of Polycrystalline vapour deposition diamond |
| CN104701364A (en) * | 2015-02-04 | 2015-06-10 | 厦门市三安集成电路有限公司 | Gallium nitride based field effect transistor and preparation method thereof |
| CN110504229A (en) * | 2018-05-17 | 2019-11-26 | 深圳先进技术研究院 | A kind of highly heat-conductive material and its preparation method and application |
| CN109825808A (en) * | 2019-03-01 | 2019-05-31 | 许世鹏 | A kind of doped diamond film preparation device and method |
Non-Patent Citations (1)
| Title |
|---|
| 反应气体流量比对PECVD类金刚石薄膜机械性能的影响;李瑞武等;《辽宁科技大学学报》;20180415(第02期);全文 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113224200A (en) | 2021-08-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5510011A (en) | Method for forming a functional deposited film by bias sputtering process at a relatively low substrate temperature | |
| JP2758948B2 (en) | Thin film formation method | |
| CN109898064B (en) | DLC/Me-C composite film and preparation method thereof | |
| US20230399734A1 (en) | Oxide film preparation method | |
| WO2023284596A1 (en) | High-conductivity, corrosion-resistant and long-lifetime max phase solid solution composite coating, and preparation method therefor and use thereof | |
| WO1994019509A1 (en) | Film forming method and film forming apparatus | |
| CN113224200B (en) | Gallium nitride semiconductor radiation detector, preparation method thereof and detection equipment | |
| KR100885690B1 (en) | A method of producing a diamond film and a diamond film produced thereby | |
| CN114134566B (en) | Method for improving heterogeneous epitaxial nucleation uniformity of diamond | |
| US11948983B2 (en) | Method for preparating SiC ohmic contact with low specific contact resistivity | |
| CN115044869A (en) | Cr-doped ta-C conductive corrosion-resistant carbon-based film and preparation method and application thereof | |
| TWI490358B (en) | Housing and method for making the same | |
| CN109898051B (en) | Wear-resistant and corrosion-resistant DLC/SiNxComposite film and preparation method thereof | |
| JP2001237446A (en) | Thin-film polycrystalline silicon, silicon-based photoelectric conversion element and its manufacturing method | |
| CN114990476B (en) | Nitrogen-doped tetrahedral amorphous carbon film and preparation method and application thereof | |
| CN113430642B (en) | Method for reducing heteroepitaxial bias threshold | |
| JP7077460B1 (en) | Electrostatic discharge characteristic adjustment film for aluminum materials and aluminum materials | |
| JP3507108B2 (en) | Method of forming deposited film by bias sputtering method | |
| CN112725748B (en) | Preparation method of superfine nanocrystalline tungsten material | |
| US8568905B2 (en) | Housing and method for making the same | |
| TWI486476B (en) | Housing and method for making the same | |
| JP3272681B2 (en) | Solar cell manufacturing method | |
| CN118497666A (en) | Preparation method and application of amorphous carbon film applied to silicon carbide chip | |
| CN103334084A (en) | Method for increasing adhesive force between tungsten film and silicon substrate | |
| CN117457811A (en) | LED chip preparation method and LED chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |