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CN113179667A - 复合式微型发光二极管、显示面板、及电子设备 - Google Patents

复合式微型发光二极管、显示面板、及电子设备 Download PDF

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Publication number
CN113179667A
CN113179667A CN201980004330.9A CN201980004330A CN113179667A CN 113179667 A CN113179667 A CN 113179667A CN 201980004330 A CN201980004330 A CN 201980004330A CN 113179667 A CN113179667 A CN 113179667A
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China
Prior art keywords
semiconductor layer
layer
emitting diode
micro light
quantum well
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CN201980004330.9A
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CN113179667B (zh
Inventor
陈靖中
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Chongqing Kangjia Optoelectronic Technology Co ltd
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Chongqing Kangjia Photoelectric Technology Research Institute Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details

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Abstract

本发明提供了一种复合式微型发光二极管,该复合式微型发光二极管包括第一微型发光二极管和第二微型发光二极管；第一微型发光二极管包括第一半导体层、第二半导体层以及第一量子阱层；第二微型发光二极管包括第三半导体层、第四半导体层以及第二量子阱层；第一半导体层和所述第四半导体层具有第一极性，第二半导体层和第三半导体层具有第二极性；第二半导体层和第三半导体层材质相同，第二半导体层和第三半导体层结合于一起以使得第一微型发光二极管和第二微型发光二极管结合于一起；第一量子阱层和第二量子阱层参杂的材质不同。此外，本发明还提供了一种显示面板和电子设备。

Description

PCT国内申请，说明书已公开。

Claims (16)

  1. PCT国内申请，权利要求书已公开。
CN201980004330.9A 2019-11-26 2019-11-26 复合式微型发光二极管、显示面板、及电子设备 Active CN113179667B (zh)

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PCT/CN2019/120846 WO2021102665A1 (zh) 2019-11-26 2019-11-26 复合式微型发光二极管、显示面板、及电子设备

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CN113179667A true CN113179667A (zh) 2021-07-27
CN113179667B CN113179667B (zh) 2022-04-29

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117080335A (zh) * 2023-10-12 2023-11-17 惠科股份有限公司 微型发光二极管及显示面板

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1619846A (zh) * 2004-02-26 2005-05-25 金芃 功率型高亮度白光组合半导体发光二极管（led）芯片及批量生产的工艺
US20070111345A1 (en) * 2005-11-14 2007-05-17 Palo Alto Research Center Incorporated Method for controlling the structure and surface qualities of a thin film and product produced thereby
CN101582418A (zh) * 2008-05-16 2009-11-18 北京大学 电注入调控三基色单芯片白光发光二极管
CN103199163A (zh) * 2012-01-06 2013-07-10 华夏光股份有限公司 发光二极管装置
CN203607447U (zh) * 2013-12-09 2014-05-21 圆融光电科技有限公司 Led芯片
CN103996755A (zh) * 2014-05-21 2014-08-20 天津三安光电有限公司 一种氮化物发光二极管组件的制备方法
CN108010996A (zh) * 2017-11-29 2018-05-08 扬州乾照光电有限公司 一种AlGaInP发光二极管及其制作方法
CN109599466A (zh) * 2018-12-03 2019-04-09 广东工业大学 一种双波长led外延结构及其制作方法
KR20190061227A (ko) * 2017-11-27 2019-06-05 광주과학기술원 마이크로 led 장치 및 그 제조 방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100298205B1 (ko) * 1998-05-21 2001-08-07 오길록 고집적삼색발광소자및그제조방법

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1619846A (zh) * 2004-02-26 2005-05-25 金芃 功率型高亮度白光组合半导体发光二极管（led）芯片及批量生产的工艺
US20070111345A1 (en) * 2005-11-14 2007-05-17 Palo Alto Research Center Incorporated Method for controlling the structure and surface qualities of a thin film and product produced thereby
CN101582418A (zh) * 2008-05-16 2009-11-18 北京大学 电注入调控三基色单芯片白光发光二极管
CN103199163A (zh) * 2012-01-06 2013-07-10 华夏光股份有限公司 发光二极管装置
CN203607447U (zh) * 2013-12-09 2014-05-21 圆融光电科技有限公司 Led芯片
CN103996755A (zh) * 2014-05-21 2014-08-20 天津三安光电有限公司 一种氮化物发光二极管组件的制备方法
KR20190061227A (ko) * 2017-11-27 2019-06-05 광주과학기술원 마이크로 led 장치 및 그 제조 방법
CN108010996A (zh) * 2017-11-29 2018-05-08 扬州乾照光电有限公司 一种AlGaInP发光二极管及其制作方法
CN109599466A (zh) * 2018-12-03 2019-04-09 广东工业大学 一种双波长led外延结构及其制作方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117080335A (zh) * 2023-10-12 2023-11-17 惠科股份有限公司 微型发光二极管及显示面板
CN117080335B (zh) * 2023-10-12 2024-01-26 惠科股份有限公司 微型发光二极管及显示面板

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CN113179667B (zh) 2022-04-29
WO2021102665A1 (zh) 2021-06-03

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Address after: 402760 No.69, Wushan Road, Biquan street, Bishan District, Chongqing

Patentee after: Chongqing Kangjia Optoelectronic Technology Co.,Ltd.

Country or region after: China

Address before: 402760 No.69, Wushan Road, Biquan street, Bishan District, Chongqing

Patentee before: Chongqing Kangjia Photoelectric Technology Research Institute Co.,Ltd.

Country or region before: China